CN105986158A - High-thermal-conductivity diamond-metal composite material and preparation method thereof - Google Patents
High-thermal-conductivity diamond-metal composite material and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a diamond-metal composite material. Specifically, the composite material comprises metal matrices and diamond composites. The diamond composites comprise diamond particles and surface coatings compounded on the surfaces of the diamond particles. The invention further discloses a preparation method and application of the composite material. The preparation method is simple, effective, feasible, and low in cost, and the obtained composite material is excellent in performance and has great market prospects in the fields of electronic packaging and heat sink.
Description
Technical field
The present invention relates to diamond composite field, be specifically related to a kind of high heat-conductive diamond-Metals composite
Material and preparation method thereof.
Background technology
Along with being increasingly miniaturized and the development of highly integrated high power, high power device running of electronic product
The event that middle hot injury causes device normally to work accounts for more than the 60% of whole electronic device loss rate.Cause
This has the high heat sink material with electronic device matched coefficients of thermal expansion of heat conductivity and is paid close attention to widely.
With high thermal conductivity coefficient CNT, diamond is for strengthening phase, with the metal such as Al, Cu, Ag as matrix
Third generation Heat Conduction Material be just continuously developed, but there is also some problems.For diamond-aluminium composite material
For, most researchers excessively focuses on the raising of heat conductivity, ignores composite and prepared
Cheng Zhong, facile hydrolysis phase Al4C3Generation cause composite to ultimately result at humid air median surface poor stability
The composite of preparation cannot obtain preferably application in practice.Poor for two-phase interface bond strength
For diamond-copper (silver-colored) composite, in existing preparation process condition, often introduce carbon in the two interface
Compound element (such as B, W, Cr, Ti, Mo, Si etc.) obtains preferable binding ability, but boundary layer one
As thermal conductivity relatively low, interfacial layer thickness controls improper to affect obtained matrices of composite material to a certain extent
Thermal conductivity, thus cause heat conductivity to decline.
In sum, this area has the compound of high heat conductance and high stability in the urgent need to exploitation is a kind of simultaneously
Material.
Summary of the invention
It is an object of the invention to provide a kind of composite with high heat conductance and high stability.
A first aspect of the present invention, it is provided that a kind of diamond-metallic composite, described composite comprises
Metallic matrix and the diamond complex compound with described metallic matrix, wherein,
Described diamond complex comprises diamond particles and is compound in the plated surface of described diamond particle surfaces
Layer；
Described overlay coating comprises the boron carbide layer being compound in described diamond particle surfaces and is compound in described carbonization
The boron layer on boron layer surface.
In another preference, described in be complex as chemical bonds.
In another preference, described metallic matrix is selected from lower group: copper, aluminum, silver or its alloy or its group
Close.
In another preference, being shaped as of described metallic matrix: graininess, sheet.
In another preference, the particle diameter of described metallic matrix is 1-400 μm, preferably 10-100 μm, more
Goodly for 30-80 μm.
In another preference, the particle diameter of described diamond complex is 80-520 μm.
In another preference, the particle diameter of described diamond complex is 100-500 μm, preferably
150-420 μm, is more preferably 200-400 μm.
In another preference, described diamond complex be shaped as graininess.
In another preference, based on the cumulative volume of described composite, the volume hundred of described diamond complex
Proportion by subtraction is 15-85%.
In another preference, based on the cumulative volume of described composite, the volume hundred of described diamond complex
Proportion by subtraction is 40%-85%, preferably 45%-85%, is more preferably 50%-80%.
In another preference, described overlay coating thickness is 1-5000nm.
In another preference, described overlay coating thickness is 10-3000nm, preferably 100-2000nm, more
Goodly for 100-1000nm, it is most preferably 100-200nm.
In another preference, described overlay coating is evenly coated at described diamond particle surfaces.
In another preference, in described overlay coating, the thickness ratio of described boron carbide layer and described boron layer is 1:
200, preferably 1:100, be more preferably 1:1.
In another preference, the thickness of described boron carbide layer is 1-500nm, preferably 1-50nm, more
Goodly for 1-40nm.
In another preference, the thickness of described boron layer is 1-2000nm, preferably 1-500nm, more preferably
Ground is 1-80nm.
In another preference, described composite has one or more features selected from lower group:
1) when metallic matrix is aluminum, the thermal conductivity of gained composite >=480W/m k；
2) when metallic matrix is aluminum, the thermal coefficient of expansion≤8.3ppm/K of gained composite；
3) when metallic matrix is copper, the thermal conductivity of gained composite >=528W/m K；
4) when metallic matrix is copper, the thermal coefficient of expansion≤8.8ppm/k of gained composite；
In another preference, without hydrolysis phase in described composite.
A second aspect of the present invention, it is provided that the preparation side of the composite described in a kind of first aspect present invention
Method, described method comprises the steps:
A-1) provide a kind of by diamond particles, boron raw material and the homogeneous mixture A of organic solution composition；
A-2) under vacuo, mixture A described in heat treatment, obtain diamond complex；
B-1) a kind of step a-2 is provided) diamond complex of gained and the mixture B of raw metal；
B-2) mixture B described in hot pressed sintering, obtains the composite described in first aspect present invention.
In another preference, described boron raw material is powder, liquid.
In another preference, described boron raw material is selected from lower group: boron powder, boride or a combination thereof.
In another preference, the particle diameter of described boron raw material is 100-50000nm, preferably 100-20000nm；
It is more preferably 100-10000nm.
In another preference, the particle diameter of described diamond particles is 100-500 μm, preferably 150-400 μm,
It it is more preferably 200-400 μm.
In another preference, described organic solution is selected from lower group: ethanol, polyvinyl alcohol water solution, poly-second two
Alcohol-water solution or a combination thereof.
In another preference, based on the gross weight of described mixture A, the content of diamond particles is 80-
99wt%；And/or
The content of boron raw material is 1-15wt%.
In another preference, based on the gross weight of described mixture A, the content of diamond particles is 85-
99wt%, preferably 85-95wt%.
In another preference, based on the gross weight of described mixture A, the content of boron raw material is 1-12wt%,
Preferably 1-10wt%.
In another preference, described heat treatment temperature is 1000-1400 DEG C, preferably 1000-1350 DEG C, more
Goodly for 1000-1300 DEG C.
In another preference, the heat treatment time in described heat treatment temperature is 30-300min, preferably
30-100min, is more preferably 30-60min.
In another preference, described vacuum≤10-1Pa；Preferably 10-2Pa。
In another preference, described heat treatment is carried out in vacuum carbon tube furnace.
In another preference, described vacuum carbon tube furnace is heated to heat treatment temperature with rate of heat addition 1-40 DEG C/min,
Preferably 5-10 DEG C/min, is more preferably 8-10 DEG C/min.
In another preference, the sintering temperature of described mixture B is 600-2000 DEG C, preferably
700-1500 DEG C, more preferably it is 700-1200 DEG C.
In another preference, the sintering time of described mixture B is 30-300min, preferably 60-150min,
It is more preferably 60-120min.
In another preference, the pressure of described mixture B hot pressed sintering is 30-150MPa, preferably
40-80MPa。
In another preference, described mould is warmed up to sintering temperature with the rate of heat addition of 5-50 DEG C/min, preferably
The rate of heat addition be 5-30 DEG C/min, the more preferably rate of heat addition be 5-25 DEG C/min.
A third aspect of the present invention, it is provided that a kind of goods, described goods comprise described in first aspect present invention
Composite or be made up of the composite described in first aspect present invention.
A fourth aspect of the present invention, it is provided that the purposes of the composite described in a kind of first aspect present invention, uses
In processing machinery goods, composite, electronic devices and components.
In another preference, described machinework is selected from lower group: cutter, grinding tool, file, emery wheel, saw
Sheet, drill bit.
In another preference, described electronic devices and components are selected from lower group: encapsulation base material, fin.
In should be understood that within the scope of the present invention, above-mentioned each technical characteristic of the present invention and below (such as embodiment)
Can be combined with each other between each technical characteristic of middle specific descriptions, thus constitute new or preferred technical side
Case.As space is limited, the most tired at this state.
Accompanying drawing explanation
Fig. 1 be the SEM figure of the embodiment of the present invention 1 diamond complex 1 and EDS can spectrogram, a) and b)
SEM for diamond complex 1 schemes, and c) is that the EDS of diamond complex 1 can spectrogram.
Fig. 2 a) it is the SEM picture of the composite 1 of the embodiment of the present invention 1, Fig. 2 b) it is the embodiment of the present invention 3
The SEM picture of composite 3.
Fig. 3 a) it is the XRD figure sheet of the composite 1 of the embodiment of the present invention 1, Fig. 3 b) it is the embodiment of the present invention 3
The XRD figure sheet of composite 3.
Fig. 4 a) and b) be the SEM picture of composite C1 of comparative example 1 of the present invention, Fig. 4 c) it is the present invention couple
The SEM picture of the composite C2 of ratio 2.
Detailed description of the invention
The present inventor is through in-depth study for a long time, it has unexpectedly been found that diamond carries out surface process,
After its plated surface boron carbide layer and boron layer, then by itself and metal composite, can prepare have simultaneously high heat conductance,
High stability and the composite of low thermal coefficient of expansion.Based on above-mentioned discovery, inventor completes the present invention.
Term
As used herein, term " overlay coating of the present invention ", " overlay coating " or " carbide lamella " are interchangeable
Use, refer both to be compound in the boron carbide layer of described diamond particle surfaces and be compound in described boron carbide layer surface
The coating that boron layer is formed.
Diamond particles
In the present invention, described diamond particles is not particularly limited.
Typically, the shape of described diamond includes (but being not limited to): powdery, bulk, lamellar or film
Shape.
Typically, described diamond is natural or for generating through high temperature, high pressure or chemical gaseous phase deposition.
In the present invention, the particle diameter of described diamond particles is not particularly limited, can be arbitrary dimension
Grain.
Specifically, the particle diameter of described diamond particles is preferably 100-500 μm, preferably 150-400 μm, more
Goodly for 200-400 μm.
Diamond particles used by the present invention is the substrate for boride layer of the present invention growth, is the most also diffusion
The carrier of boron atom.In the present invention, diamond is the indispensable carrier material of boron atoms permeating, Buddha's warrior attendant
Stone is due to the feature of its lattice parameter so that boron atom forms uniform boride layer at diamond surface.
Boron raw material
In the present invention, described boron raw material is not particularly limited.
Typically, the shape of described boron raw material includes (but being not limited to): powder, liquid.
Typically, described boron raw material includes (but being not limited to): boron powder, boride or a combination thereof.
Typically, the particle diameter of described boron raw material is 100-50000nm, preferably 100-20000nm；More preferably
For 100-10000nm.
Organic solution
In the present invention, described organic solution is not particularly limited, and can select the material that this area is conventional, or
Person prepares by conventional method, or is commercially available from market.
Typically, described organic solution includes (but being not limited to): ethanol, polyvinyl alcohol water solution, poly-
Glycol water or a combination thereof.
Composite
The invention provides a kind of diamond-metallic composite, described composite comprise metallic matrix and with institute
State the diamond complex that metallic matrix is compound, wherein,
Described diamond complex comprises diamond particles and is compound in the plated surface of described diamond particle surfaces
Layer；
Described overlay coating comprises the boron carbide layer being compound in described diamond particle surfaces and is compound in described carbonization
The boron layer on boron layer surface.
In another preference, described in be complex as chemical bonds.
The metallic matrix of the present invention include field of radiating can metal (including simple metal and alloy), do not have
Limit especially.
Typically, described metallic matrix includes (but being not limited to): copper, aluminum, silver or its alloy or
A combination thereof.
Typically, the shape of described metallic matrix includes (but being not limited to): graininess, sheet.
Typically, the particle diameter of described metallic matrix is preferably 1-400 μm, preferably 10-100 μm, more preferably
For 30-80 μm.
In the present invention, the particle diameter of described diamond complex is not particularly limited, preferably 80-520 μm.
Typically, the particle diameter of described diamond complex is 100-500 μm, preferably 150-420 μm, more
Goodly for 200-400 μm.
Typically, the shape of described diamond complex includes (but being not limited to): graininess.
Typically, based on the cumulative volume of described composite, the percent by volume of described diamond complex is 15
-85%.
Specifically, based on the cumulative volume of described composite, the percent by volume of described diamond complex is
40%-85%, preferably 45%-85%, be more preferably 50%-80%.
In the present invention, described overlay coating thickness is 1-5000nm.
Typically, described overlay coating thickness is 10-3000nm, preferably 100-2000nm, is more preferably
100-1000nm, is most preferably 100-200nm.
Should be understood that in the present invention, described overlay coating is evenly coated at described diamond particle surfaces.
In another preference, in described overlay coating, the thickness ratio of described boron carbide layer and described boron layer is 1:
200, preferably 1:100, be more preferably 1:1.
In another preference, the thickness of described boron carbide layer is 1-500nm, preferably 1-50nm, more
Goodly for 1-40nm.
In another preference, the thickness of described boron layer is 1-2000nm, preferably 1-500nm, more preferably
Ground is 1-80nm.
Should be understood that in the present invention, the thickness of described boron layer and roughness can be by regulation state modulator.
In another preference, described composite has one or more features selected from lower group:
1) when metallic matrix is aluminum, the thermal conductivity of gained composite >=480W/m k；
2) when metallic matrix is aluminum, the thermal coefficient of expansion≤8.3ppm/K of gained composite；
3) when metallic matrix is copper, the thermal conductivity of gained composite >=528W/m K；
4) when metallic matrix is copper, the thermal coefficient of expansion≤8.8ppm/k of gained composite；
In another preference, without hydrolysis phase in described composite.
Preparation method
The invention provides the preparation method of a kind of described composite, described method comprises the steps:
A-1) provide a kind of by diamond particles, boron raw material and the homogeneous mixture A of organic solution composition；
A-2) under vacuo, mixture A described in heat treatment, obtain diamond complex；
B-1) a kind of step a-2 is provided) diamond complex of gained and the mixture B of raw metal；
B-2) mixture B described in hot pressed sintering, obtains the composite described in claim 1.
Specifically, based on the gross weight of described mixture A, the content of diamond particles is 80-99wt%；With
/ or
The content of boron raw material is 1-15wt%.
Typically, based on the gross weight of described mixture A, the content of diamond particles is 85-99wt%, relatively
Goodly for 85-95wt%.
Typically, based on the gross weight of described mixture A, the content of boron raw material is 1-12wt%, preferably
1-10wt%.
In the present invention, described heat treatment time, vacuum, the rate of heat addition are not particularly limited.
In another preference, described heat treatment temperature is 1000-1400 DEG C, preferably 1000-1350 DEG C, more
Goodly for 1000-1300 DEG C.
In another preference, the heat treatment time in described heat treatment temperature is 30-300min, preferably
30-100min, is more preferably 30-60min.
In another preference, described vacuum≤10-1Pa；Preferably 10-2Pa。
In another preference, described heat treatment is carried out in vacuum carbon tube furnace.
In another preference, described vacuum carbon tube furnace is heated to heat treatment temperature with rate of heat addition 1-40 DEG C/min,
Preferably 5-10 DEG C/min, is more preferably 8-10 DEG C/min.
In another preference, the sintering temperature of described mixture B is 600-2000 DEG C, preferably
700-1500 DEG C, more preferably it is 700-1200 DEG C.
In another preference, the sintering time of described mixture B is not particularly limited, preferably 30-300min,
Preferably 60-150min, is more preferably 60-120min.
In another preference, the pressure of described mixture B hot pressed sintering is not particularly limited, and is preferably
30-150MPa, preferably 40-80MPa.
In another preference, described mould is warmed up to sintering temperature with the rate of heat addition of 5-50 DEG C/min, preferably
The rate of heat addition be 5-30 DEG C/min, the more preferably rate of heat addition be 5-25 DEG C/min.
Application
Present invention also offers a kind of goods, described goods comprise described composite or by described composite wood
Material is constituted.
Present invention also offers the purposes of a kind of described composite, for processing machinery goods, composite,
Electronic devices and components.
Typically, described machinework includes (but being not limited to): cutter, grinding tool, file, emery wheel,
Saw blade, drill bit.
Typically, described electronic devices and components include (but being not limited to): encapsulation base material, fin.
Compared with prior art, the present invention has a following major advantage:
(1) interfacial shear strength prepared by the present invention is excellent, and good stability, heat conductivility is good.
(2) Thermal expansion coefficient of composites prepared by the present invention is low and controlled；
(3) preparation method of the present invention is simple, and operation is simple, and equipment requirements is simple, low cost, suitable
Close industrial production operation；
(4) large-sized composite material can be prepared.
Below in conjunction with specific embodiment, the present invention is expanded on further.Should be understood that these embodiments are merely to illustrate
The present invention rather than restriction the scope of the present invention.The experimental technique of unreceipted actual conditions in the following example is logical
Often according to normal condition or according to the condition proposed by manufacturer.Unless otherwise indicated, otherwise percentage ratio and number
Calculate by weight.Unless stated otherwise, test according to a conventional method the density of composite of the present invention, thermal conductivity,
The performances such as thermal coefficient of expansion.
Unless otherwise defined, all specialties used in literary composition are familiar with one skilled in the art with scientific words
Same meaning.Additionally, any method similar or impartial to described content and material all can be applicable to the present invention
In method.Preferable implementation described in literary composition only presents a demonstration with material and is used.
Embodiment 1
1.1 prepare diamond complex 1
Mean diameter is about the diamond particles of 200 μm respectively, and a small amount of boron powder and concentration are the polyethylene of 5%
Alcohol-water solution mix homogeneously, forms mixture.Wherein, calculate by the gross weight of mixture, the quality of B powder
Mark is 10%, and the mass fraction of diamond particles is 85%.Mixture is put in vacuum carbon tube furnace, take out
Vacuum to vacuum is 10-2Pa, is that 10 DEG C/min is warming up to 1300 DEG C with heating rate, is incubated 60min, so
After cool to room temperature with the furnace.The mixture high-temperature process crossed takes out, cross respectively 30 mesh, 60 mesh, 80 mesh,
100 mesh, 150 mesh sieves, remove superfluous boron powder, it is thus achieved that superficial growth has the diamond complex of boride layer
1。
Result
Diamond complex 1 is carried out surface morphology and composition test.
Fig. 1 is SEM figure and the EDS energy spectrogram of diamond complex 1, from figure 1 it appears that carbide
Layer is evenly coated at diamond particle surfaces.
1.2 prepare diamond-aluminium composite material 1
To mix homogeneously, after mixing through the diamond complex 1 of aforementioned step process is common with high-purity aluminium powder
Powder gross weight calculate, aluminium powder mass fraction is 30%.By mixed powder in high-accuracy mould,
Being heated to 700 DEG C with 10 DEG C/min of heating rate to be sintered, temperature retention time is 60min, and pressure is 50MPa；
Then cooling to room temperature with the furnace, obtain diamond-aluminium composite material 1, its density is 3.2g/cm3, thermal conductivity is
560W/m K, thermal coefficient of expansion is 8.22ppm/K.
Result
Gained composite 1 is carried out surface morphology and composition test.
Fig. 2 a) it is the SEM picture of composite 1, from Fig. 2 a) it can be seen that diamond complex 1 and gold
Belonging to and combine densification between aluminum, this shows that diamond complex 1 and metallic aluminium have high consistency and combine strong
Degree.
Fig. 3 a) be the XRD figure sheet of composite 1, from Fig. 3 a) it can be seen that in composite 1
There is not Al4C3Hydrolysis phase, this shows that composite 1 will not hydrolyze in humid air, can stablize
Exist.
Embodiment 2
2.1 prepare diamond complex 2
Mean diameter is about the diamond particles of 300 μm respectively, and a small amount of boron powder and concentration are the poly-second two of 5%
Alcohol-water solution mix homogeneously, forms mixture.Wherein, calculate by the gross weight of mixture, the quality of B powder
Mark is 10%, and the mass fraction of diamond is 80%.Above-mentioned mixture is put in vacuum carbon tube furnace, takes out
Vacuum to vacuum is 10-2Pa, is that 10 DEG C/min is warming up to 1250 DEG C with heating rate, is incubated 60min, so
After cool to room temperature with the furnace.The mixture high-temperature process crossed takes out, cross respectively 30 mesh, 60 mesh, 80 mesh,
100 mesh, 150 mesh sieves, remove superfluous boron powder, it is thus achieved that superficial growth has the diamond complex of boride layer
2。
2.2 prepare diamond-aluminium composite material 2
The diamond complex 2 step process before this obtained is put in die casting, with the speed of 25 DEG C/min
After high-frequency heating makes mould be preheating to 700 degree, the aluminum water after then adding heat fusing pours rapidly die casting into
In carry out hot pressing, pressure is 50MPa, then cools to room temperature with the furnace, obtains diamond-aluminium composite material 2.
Calculating by the gross weight of material after mixing, the mass fraction of aluminum is 40%.The density of gained composite 2 is
3.01g/cm3, thermal conductivity is 480W/m K, and thermal coefficient of expansion is 8.04ppm/K.
Embodiment 3
3.1 prepare diamond complex 3
Mean diameter is about the diamond particles of 300 μm respectively, and a small amount of boron powder and concentration are the polyethylene of 5%
Alcohol-water solution mix homogeneously, forms mixture.Wherein, calculate by the gross weight of mixture, the quality of B powder
Mark is 8%, and the mass fraction of diamond particles is 80%.Above-mentioned mixture is put in vacuum carbon tube furnace,
Being evacuated to vacuum is 10-2Pa, is that 8 DEG C/min is warming up to 1300 DEG C with heating rate, is incubated 60min, so
After cool to room temperature with the furnace.The mixture high-temperature process crossed takes out, cross respectively 30 mesh, 60 mesh, 80 mesh,
100 mesh, 150 mesh sieves, remove superfluous boron powder, it is thus achieved that superficial growth has the diamond complex of boride layer
3。
3.2 prepare diamond-copper composite material 3
To mix homogeneously, after mixing through the diamond complex 3 of aforementioned step process is common with high-purity copper powder
Powder gross weight calculate, copper powder mass fraction is 50%.By mixed powder at vacuum hotpressing stove mould
Being heated to 1100 DEG C with 8 DEG C/min of heating rate in tool to be sintered, sintering pressure is 45MPa, prepares Buddha's warrior attendant
Stone-carbon/carbon-copper composite material 3, its density is 6.22g/cm3, thermal conductivity is 528W/m K, and thermal coefficient of expansion is 8.794
ppm/K。
Result
Fig. 2 b) it is the SEM picture of diamond-copper composite material, in figure, diamond is well combined with copper；Fig. 3 b)
For the XRD figure sheet of composite 3, from Fig. 3 b) it can be seen that there are not other in composite 3 and close
Metallographic material.
Embodiment 4
4.1 prepare diamond complex 4
Mean diameter is about the diamond particles of 300 μm respectively, and a small amount of boron powder and concentration are the poly-second two of 5%
Alcohol-water solution mix homogeneously, forms mixture.Wherein, calculate by the gross weight of mixture, the quality of B powder
Mark is 8%, and the mass fraction of diamond is 80%.Above-mentioned mixture is put in vacuum carbon tube furnace, takes out true
Sky to vacuum is 10-2Pa, is that 8 DEG C/min is warming up to 1250 DEG C with heating rate, be incubated 60min, then with
Stove is cooled to room temperature.Mixture high-temperature process crossed takes out, and crosses 30 mesh, 60 mesh, 80 mesh sieves respectively, goes
Except superfluous boron powder, it is thus achieved that superficial growth has the diamond complex 4 of boride layer.
4.2 prepare diamond-copper composite material 4
By diamond complex 4 uniform spreading through aforementioned step process on copper sheet, the most uniformly completing
Diamond complex 4 surface place copper sheet one layer.Gains are put into discharge plasma sintering furnace mould
In, it being heated to 1000 DEG C with 10 DEG C/min of heating rate and be sintered, temperature retention time is 60min, sintering pressure
For 50MPa, then cooling to room temperature with the furnace, obtain diamond-copper composite material 4, its density is
6.258g/cm3, thermal conductivity is 590W/m K, and thermal coefficient of expansion is 8.11ppm/K.
Comparative example 1
Diamond-aluminium composite material C1
Undressed diamond powder body is being sintered under 1.2 identical sintering conditions in embodiment 1 with aluminium powder
Process obtains composite C1.
Fig. 4 a) and the SEM figure of b) the composite C1 of to be original diamond powder body with metallic aluminium powder be combined gained
Sheet, from Fig. 4 a) and b) can be seen that aluminium powder is optionally attached on diamond surface, cause aluminium powder and Buddha's warrior attendant
The bond strength of stone granule is less.Additionally, prepare composite material at high temperature, composite material interface combines
Place has facile hydrolysis brittlement phase Al4C3Generation, cause composite C1 in humid air median surface stability
Difference.
Comparative example 2
Diamond-copper composite material C2
Undressed diamond powder body is being sintered under 3.2 identical sintering conditions in embodiment 3 with copper powder
Process obtains composite C2.
Fig. 4 c) it is original diamond powder body and the copper powder composite C2 that is combined gained, from Fig. 4 c)
In can be seen that combine between copper powder and diamond particles poor.This is due to diamond particles and metallic copper circle
Almost without wellability between face, causing gained composite C2 binding ability poor, thermal conductivity is relatively low
(248W/m·K)。
Compared to comparative example 1 and 2, the diamond after the method for the invention processes sinters institute with metallic matrix
The stability of composite, bond strength, thermal conductivity and thermal coefficient of expansion be all significantly improved and
Promoting, wherein thermal conductivity rises a height of 528W/m K from 248W/m K, and enhancing rate is up to 113%.
The all documents mentioned in the present invention are incorporated as reference the most in this application, just as each document
It is individually recited as with reference to like that.In addition, it is to be understood that after the above-mentioned teachings having read the present invention,
The present invention can be made various changes or modifications by those skilled in the art, and these equivalent form of values fall within this Shen equally
Please appended claims limited range.
Claims (10)
1. diamond-metallic composite, it is characterised in that described composite comprises metallic matrix and the diamond complex compound with described metallic matrix, wherein,
Described diamond complex comprises diamond particles and is compound in the overlay coating of described diamond particle surfaces；
Described overlay coating comprises the boron carbide layer being compound in described diamond particle surfaces and the boron layer being compound in described boron carbide layer surface.
2. composite as claimed in claim 1, it is characterised in that described metallic matrix is selected from lower group: copper, aluminum, silver or its alloy or a combination thereof.
3. composite as claimed in claim 1, it is characterised in that the particle diameter of described diamond complex is 80-520 μm.
4. composite as claimed in claim 1, it is characterised in that based on the cumulative volume of described composite, the percent by volume of described diamond complex is 15-85%.
5. composite as claimed in claim 1, it is characterised in that described overlay coating thickness is 1-5000nm.
6. composite as claimed in claim 1, it is characterised in that described composite has one or more features selected from lower group:
1) when metallic matrix is aluminum, the thermal conductivity of gained composite >=480W/m k；
2) when metallic matrix is aluminum, the thermal coefficient of expansion≤8.3ppm/K of gained composite；
3) when metallic matrix is copper, the thermal conductivity of gained composite >=528W/m K；
4) when metallic matrix is copper, the thermal coefficient of expansion≤8.8ppm/k of gained composite.
7. the preparation method of the composite described in a claim 1, it is characterised in that described method comprises the steps:
A-1) provide a kind of by diamond particles, boron raw material and the homogeneous mixture A of organic solution composition；
A-2) under vacuo, mixture A described in heat treatment, obtain diamond complex；
B-1) a kind of step a-2 is provided) diamond complex of gained and the mixture B of raw metal；
B-2) mixture B described in hot pressed sintering, obtains the composite described in claim 1.
8. preparation method as claimed in claim 7, it is characterised in that based on the gross weight of described mixture A, the content of diamond particles is 80-99wt%；And/or
The content of boron raw material is 1-15wt%.
9. goods, it is characterised in that described goods comprise the composite described in claim 1 or are made up of the composite described in claim 1.
10. the purposes of the composite described in a claim 1, it is characterised in that for processing machinery goods, composite, electronic devices and components.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510075147.1A CN105986158B (en) | 2015-02-12 | 2015-02-12 | A kind of high heat-conductive diamond metallic composite and preparation method thereof |
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| CN201510075147.1A CN105986158B (en) | 2015-02-12 | 2015-02-12 | A kind of high heat-conductive diamond metallic composite and preparation method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107419133A (en) * | 2017-05-12 | 2017-12-01 | 南通鑫祥锌业有限公司 | High-volume fractional diamond zinc composite |
| CN107649688A (en) * | 2017-08-21 | 2018-02-02 | 武汉速博酷新材料科技有限公司 | A kind of diamond heat-conducting composite of easy processing and its preparation method and application |
| CN107937783A (en) * | 2017-11-17 | 2018-04-20 | 湖南大学 | Increase the method for binding ability between diamond and metallic matrix |
| CN108179004A (en) * | 2016-12-08 | 2018-06-19 | 中国科学院宁波材料技术与工程研究所 | A kind of PcBN composite and its preparation and application |
| CN109371303A (en) * | 2018-11-07 | 2019-02-22 | 中国科学院宁波材料技术与工程研究所 | Heat-conductive composite material and preparation method thereof, radiating piece |
| CN113210602A (en) * | 2021-05-18 | 2021-08-06 | 许昌学院 | Preparation method of copper-aluminum alloy coated diamond complex |
| CN115323211A (en) * | 2022-08-15 | 2022-11-11 | 广东奔朗新材料股份有限公司 | Diamond-copper composite material and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1201770A (en) * | 1970-03-24 | 1970-08-12 | Zd Y Jana Svermy Narodni Podni | Improvements in or relating to sintered carbides |
| JPS6191344A (en) * | 1984-10-11 | 1986-05-09 | Toshiba Tungaloy Co Ltd | High hardness sintered body |
| CN101545057A (en) * | 2009-05-15 | 2009-09-30 | 北京科技大学 | Method for preparing diamond/Cu composite material with high heat conductivity |
| CN101831584A (en) * | 2009-03-10 | 2010-09-15 | 北京有色金属研究总院 | High heat-conducting copper-based composite material and preparation method thereof |
| CN102383014A (en) * | 2011-11-11 | 2012-03-21 | 华中科技大学 | Method for preparing diamond-copper composite material by virtue of metallization of high-temperature blending surface |
-
2015
- 2015-02-12 CN CN201510075147.1A patent/CN105986158B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1201770A (en) * | 1970-03-24 | 1970-08-12 | Zd Y Jana Svermy Narodni Podni | Improvements in or relating to sintered carbides |
| JPS6191344A (en) * | 1984-10-11 | 1986-05-09 | Toshiba Tungaloy Co Ltd | High hardness sintered body |
| CN101831584A (en) * | 2009-03-10 | 2010-09-15 | 北京有色金属研究总院 | High heat-conducting copper-based composite material and preparation method thereof |
| CN101545057A (en) * | 2009-05-15 | 2009-09-30 | 北京科技大学 | Method for preparing diamond/Cu composite material with high heat conductivity |
| CN102383014A (en) * | 2011-11-11 | 2012-03-21 | 华中科技大学 | Method for preparing diamond-copper composite material by virtue of metallization of high-temperature blending surface |
Non-Patent Citations (1)
| Title |
|---|
| HAIBO HU等: ""Improved Thermal Performance of Diamond-copper Composite with Boron Carbide Coating"", 《JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108179004A (en) * | 2016-12-08 | 2018-06-19 | 中国科学院宁波材料技术与工程研究所 | A kind of PcBN composite and its preparation and application |
| CN108179004B (en) * | 2016-12-08 | 2020-07-17 | 中国科学院宁波材料技术与工程研究所 | Cubic boron nitride complex and preparation and application thereof |
| CN107419133A (en) * | 2017-05-12 | 2017-12-01 | 南通鑫祥锌业有限公司 | High-volume fractional diamond zinc composite |
| CN107649688A (en) * | 2017-08-21 | 2018-02-02 | 武汉速博酷新材料科技有限公司 | A kind of diamond heat-conducting composite of easy processing and its preparation method and application |
| CN107937783A (en) * | 2017-11-17 | 2018-04-20 | 湖南大学 | Increase the method for binding ability between diamond and metallic matrix |
| CN109371303A (en) * | 2018-11-07 | 2019-02-22 | 中国科学院宁波材料技术与工程研究所 | Heat-conductive composite material and preparation method thereof, radiating piece |
| CN113210602A (en) * | 2021-05-18 | 2021-08-06 | 许昌学院 | Preparation method of copper-aluminum alloy coated diamond complex |
| CN113210602B (en) * | 2021-05-18 | 2022-11-29 | 许昌学院 | Preparation method of copper-aluminum alloy coated diamond composite |
| CN115323211A (en) * | 2022-08-15 | 2022-11-11 | 广东奔朗新材料股份有限公司 | Diamond-copper composite material and preparation method thereof |
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