CN105977358B - A kind of LED epitaxial slice and preparation method thereof - Google Patents
A kind of LED epitaxial slice and preparation method thereof Download PDFInfo
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- CN105977358B CN105977358B CN201610325624.XA CN201610325624A CN105977358B CN 105977358 B CN105977358 B CN 105977358B CN 201610325624 A CN201610325624 A CN 201610325624A CN 105977358 B CN105977358 B CN 105977358B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Abstract
The invention discloses a kind of LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.The LED epitaxial slice includes Sapphire Substrate and the GaN buffer layers being sequentially laminated in the Sapphire Substrate, layer of undoped gan, N-type GaN layer, active layer, P-type layer, the P-type layer includes the GaN layer of doping Mg, the doping concentration of Mg is gradually decreased along the stacking direction of the LED epitaxial slice in the GaN layer of the doping Mg, inserted with p-type InGaN layer in the GaN layer of the doping Mg.The doping concentration of Mg is gradually decreased along the stacking direction of LED epitaxial slice in GaN layer of the present invention by adulterating Mg, is transmitted using the longitudinal direction in the variance drive hole of Mg doping concentrations, hole is facilitated to inject active layer.And being efficiently injected into for hole can also be improved, improves the luminous efficiency of light emitting diode inserted with p-type InGaN layer in the GaN layer of doping Mg.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of LED epitaxial slice and preparation method thereof.
Background technology
Light emitting diode (Light Emitting Diode, abbreviation LED) is that electric energy can be efficiently converted into light by one kind
Can semiconductor devices, at present gallium nitride based LED receive more and more attention and study.
LED epitaxial wafer includes Sapphire Substrate and stacks gradually GaN buffer layers on a sapphire substrate, undoped
GaN layer, N-type GaN layer, active layer, p-type AlGaN layer, p-type GaN layer.When have electric current by when, the electronics and p-type of N-type GaN layer
The hole of GaN layer enters active layer recombination luminescence.
In the implementation of the present invention, inventor has found that the prior art has at least the following problems：
The quality in hole is bigger than electronics, and mobility and migration rate are all lower than electronics, and the Mg adulterated in p-type GaN layer
Only a small part can activate, therefore the number of cavities for injecting active layer is less, greatly limit shining for light emitting diode
Efficiency.
Invention content
In order to solve the problems, such as that the prior art greatly limits the luminous efficiency of light emitting diode, an embodiment of the present invention provides
A kind of LED epitaxial slice and preparation method thereof.The technical solution is as follows：
On the one hand, an embodiment of the present invention provides a kind of LED epitaxial slice, the LED epitaxial slice packets
Include Sapphire Substrate and be sequentially laminated in the Sapphire Substrate GaN buffer layers, layer of undoped gan, N-type GaN layer,
Active layer, P-type layer, the P-type layer include doping Mg GaN layer, it is described doping Mg GaN layer in Mg doping concentration along described in
The stacking direction of LED epitaxial slice gradually decreases, inserted with p-type InGaN layer in the GaN layer of the doping Mg；
The thickness of the p-type InGaN layer is greater than or equal to 20nm, and the thickness of the P-type layer is greater than or equal to 100nm.
Optionally, the GaN layer of the doping Mg includes the GaN sublayers of multiple doping Mg, GaN of each doping Mg
The doping concentration of Mg remains unchanged in layer, and the doping concentration of Mg is along the light-emitting diodes in the GaN sublayers of multiple doping Mg
The stacking direction of pipe epitaxial wafer gradually decreases.
Optionally, the p-type InGaN layer includes multiple p-type InGaN sublayers, each In in the p-type InGaN sublayers
Molar content is gradually increased along the stacking direction of the LED epitaxial slice.
Optionally, the molar content of In remains unchanged in the p-type InGaN layer.
Optionally, the p-type InGaN layer is InxGa1-xN layers, 0 ＜ x ＜ 0.25.
Optionally, the thickness of the p-type InGaN layer is 20nm~50nm.
Optionally, the thickness of the P-type layer is 100nm~200nm.
On the other hand, an embodiment of the present invention provides a kind of production method of LED epitaxial slice, the making sides
Method includes：
GaN buffer layers are grown on a sapphire substrate；
Layer of undoped gan is grown on the GaN buffer layers；
N-type GaN layer is grown in the layer of undoped gan；
Active layer is grown in the N-type GaN layer；
Growing P-type layer on the active layer, the P-type layer include the GaN layer of doping Mg, the GaN layer of the doping Mg
The doping concentration of middle Mg is gradually decreased along the stacking direction of the LED epitaxial slice, is inserted in the GaN layer of the doping Mg
Enter to have p-type InGaN layer；
The thickness of the p-type InGaN layer is greater than or equal to 20nm, and the thickness of the P-type layer is greater than or equal to 100nm.
Optionally, the GaN layer of the doping Mg includes the GaN sublayers of multiple doping Mg, GaN of each doping Mg
The doping concentration of Mg remains unchanged in layer, and the doping concentration of Mg is along the light-emitting diodes in the GaN sublayers of multiple doping Mg
The stacking direction of pipe epitaxial wafer gradually decreases.
Optionally, the p-type InGaN layer includes multiple p-type InGaN sublayers, each In in the p-type InGaN sublayers
Molar content is gradually increased along the stacking direction of the LED epitaxial slice.
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：
The doping concentration of Mg is gradually decreased along the stacking direction of LED epitaxial slice in GaN layer by adulterating Mg,
The GaN of different crystal quality is formed using the Mg for adulterating various concentration, is conducive to effective extension in hole, while adulterate using Mg
The longitudinal direction transmission in the variance drive hole of concentration, facilitates hole to inject active layer.And inserted with p-type in the GaN layer of doping Mg
InGaN layer, p-type InGaN layer can provide the low gesture position in hole, facilitate the driving in rear end hole, and then improve having for hole
Effect injection improves the luminous efficiency of light emitting diode.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of structure diagram for LED epitaxial slice that the embodiment of the present invention one provides；
Fig. 2 is a kind of flow chart of the production method of LED epitaxial slice provided by Embodiment 2 of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
An embodiment of the present invention provides a kind of LED epitaxial slices, and referring to Fig. 1, which includes
Sapphire Substrate 1 and the GaN buffer layers 2 being sequentially laminated in Sapphire Substrate 1, N-type GaN layer 4, have layer of undoped gan 3
Active layer 5, P-type layer 6.
In the present embodiment, Sapphire Substrate 1 uses (0001) crystal orientation sapphire.Active layer 5 includes alternately stacked
InGaN layer and GaN layer.P-type layer 6 includes the GaN layer of doping Mg, adulterates the doping concentration of Mg in the GaN layer of Mg along light-emitting diodes
The stacking direction of pipe epitaxial wafer gradually decreases, and adulterates in the GaN layer of Mg inserted with p-type InGaN layer.
In practical applications, can Mg doping concentrations and gradual change be realized by the control of growth atmosphere and growth rate
Change.
Optionally, the GaN sublayers of multiple doping Mg can be included by adulterating the GaN layer of Mg, each in the GaN sublayers of doping Mg
The doping concentration of Mg remains unchanged, layer of the doping concentration of Mg along LED epitaxial slice in the GaN sublayers of multiple doping Mg
Folded direction gradually decreases.
Optionally, p-type InGaN layer can include multiple p-type InGaN sublayers, mole of In in each p-type InGaN sublayers
Content is gradually increased along the stacking direction of LED epitaxial slice, is changed the position of energy band of entire P-type layer 6, is improved hole
It is efficiently injected into.
Optionally, the molar content of In can remain unchanged in p-type InGaN layer.
Optionally, p-type InGaN layer can be InxGa1-xN layers, 0 ＜ x ＜ 0.25.It is demonstrated experimentally that the p-type of 0 ＜ x ＜ 0.25
InGaN layer can improve being efficiently injected into for hole.
Optionally, the thickness of p-type InGaN layer can be 20nm~50nm.When the thickness of p-type InGaN layer is less than 20nm,
Being efficiently injected into for hole can not be improved；When the thickness of p-type InGaN layer is more than 50nm, the waste of material can be caused.
Optionally, the thickness of P-type layer 6 can be 100nm~200nm.It, can not when the thickness of P-type layer 6 is less than 100nm
Enough holes are provided；When the thickness of P-type layer 6 is more than 200nm, the waste of material can be caused.
Optionally, the thickness of GaN buffer layers 2 can be 15~35nm.
Optionally, the thickness of layer of undoped gan 3 can be 1~5 μm.
Optionally, the thickness of N-type GaN layer 4 can be 1~5 μm.
Optionally, the doping concentration of N-type GaN layer 4 can be 1018~1019cm-3。
Optionally, the thickness of the InGaN layer in active layer 5 can be 1~5nm, and the thickness of the GaN layer in active layer 5 can
Think 9~20nm.
Optionally, the sum of number of plies of the InGaN layer in active layer 5 and GaN layer can be 10~22.
Stacking side of the doping concentration of Mg along LED epitaxial slice in GaN layer of the embodiment of the present invention by adulterating Mg
To gradually decreasing, the GaN of different crystal quality is formed using the Mg for adulterating various concentration, is conducive to effective extension in hole, together
The longitudinal direction transmission in the variance drive hole of Shi Liyong Mg doping concentrations, facilitates hole to inject active layer.And the GaN layer of doping Mg
In inserted with p-type InGaN layer, p-type InGaN layer can provide the low gesture position in hole, facilitate the driving in rear end hole, Jin Erti
High hole is efficiently injected into, and improves the luminous efficiency of light emitting diode.
Embodiment two
An embodiment of the present invention provides a kind of production methods of LED epitaxial slice, are carried suitable for making embodiment one
The LED epitaxial slice of confession, referring to Fig. 2, which includes：
Step 200：Controlled at 1000~1200 DEG C, Sapphire Substrate in hydrogen atmosphere is annealed 8 minutes, is gone forward side by side
Row nitrogen treatment.
It is to be appreciated that step 200 can clean sapphire substrate surface.
In the present embodiment, Sapphire Substrate 1 uses (0001) crystal orientation sapphire.
Step 201：Controlled at 400~600 DEG C, pressure is 400~600Torr, grows GaN on a sapphire substrate
Buffer layer.
Optionally, the thickness of GaN buffer layers can be 15~35nm.
Optionally, after step 201, which can also include：
Controlled at 1000~1200 DEG C, pressure is 400~600Torr, and the time is 5~10 minutes, to buffer layer into
The processing of row in-situ annealing.
Step 202：Controlled at 1000~1100 DEG C, pressure is 100~500Torr, is grown not on GaN buffer layers
Doped gan layer.
Optionally, the thickness of layer of undoped gan can be 1~5 μm.
Step 203：Controlled at 1000~1200 DEG C, pressure is 100~500Torr, is grown in layer of undoped gan
N-type GaN layer.
Optionally, the thickness of N-type GaN layer can be 1~5 μm.
Optionally, the doping concentration of N-type GaN layer can be 1018~1019cm-3。
Step 204：Active layer is grown in N-type GaN layer.
In the present embodiment, active layer includes alternately stacked InGaN layer and GaN layer.
Specifically, when growing InGaN layer, temperature is 720~829 DEG C, and pressure is 100~500Torr；As growth GaN
During layer, temperature is 850~959 DEG C, and pressure is 100~500Torr.
Optionally, the thickness of the InGaN layer in active layer can be 3nm, and the thickness of the GaN layer in active layer can be 9
~20nm.
Optionally, the sum of number of plies of the InGaN layer in active layer and GaN layer can be 10~22.
Step 205：Controlled at 750~1080 DEG C, pressure is 200~500Torr, the growing P-type layer on active layer.
In the present embodiment, P-type layer includes the GaN layer of doping Mg, and the doping concentration edge for adulterating Mg in the GaN layer of Mg shines
The stacking direction of diode epitaxial slice gradually decreases, and adulterates in the GaN layer of Mg inserted with p-type InGaN layer.
Optionally, the GaN sublayers of multiple doping Mg can be included by adulterating the GaN layer of Mg, each in the GaN sublayers of doping Mg
The doping concentration of Mg remains unchanged, layer of the doping concentration of Mg along LED epitaxial slice in the GaN sublayers of multiple doping Mg
Folded direction gradually decreases.
Optionally, p-type InGaN layer can include multiple p-type InGaN sublayers, mole of In in each p-type InGaN sublayers
Content is gradually increased along the stacking direction of LED epitaxial slice.
Optionally, the molar content of In can remain unchanged in p-type InGaN layer.
Optionally, p-type InGaN layer can be InxGa1-xN layers, 0 ＜ x ＜ 0.25.
Optionally, the thickness of p-type InGaN layer can be 20nm~50nm.
Optionally, the thickness of P-type layer can be 100nm~200nm.
Step 206：Controlled at 850~1050 DEG C, pressure is 100~300Torr, the growing P-type in p-type GaN layer
Contact layer.
Optionally, the thickness of p-type contact layer can be 5~300nm.
Step 207：Controlled at 650~850 DEG C, the time is 5~15 minutes, is carried out at annealing in nitrogen atmosphere
Reason.
Epitaxial wafer is fabricated to single size as 9*7mil through semiconductor technologies such as over cleaning, deposition, lithography and etchings
LED chip.It is found after LED core built-in testing, when operating current is 20mA, light efficiency is significantly improved.
Stacking side of the doping concentration of Mg along LED epitaxial slice in GaN layer of the embodiment of the present invention by adulterating Mg
To gradually decreasing, the GaN of different crystal quality is formed using the Mg for adulterating various concentration, is conducive to effective extension in hole, together
The longitudinal direction transmission in the variance drive hole of Shi Liyong Mg doping concentrations, facilitates hole to inject active layer.And the GaN layer of doping Mg
In inserted with p-type InGaN layer, p-type InGaN layer can provide the low gesture position in hole, facilitate the driving in rear end hole, Jin Erti
High hole is efficiently injected into, and improves the luminous efficiency of light emitting diode.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes Sapphire Substrate and is sequentially laminated on
GaN buffer layers, layer of undoped gan in the Sapphire Substrate, N-type GaN layer, active layer, P-type layer, which is characterized in that described
P-type layer includes the GaN layer of doping Mg, and the doping concentration of Mg is along the LED epitaxial slice in the GaN layer of the doping Mg
Stacking direction gradually decrease, it is described doping Mg GaN layer in inserted with p-type InGaN layer；
The thickness of the p-type InGaN layer is greater than or equal to 20nm, and the thickness of the P-type layer is greater than or equal to 100nm.
2. LED epitaxial slice according to claim 1, which is characterized in that the GaN layer of the doping Mg includes more
The GaN sublayers of a doping Mg, each the doping concentration of Mg remains unchanged in the GaN sublayers of the doping Mg, multiple doping
The doping concentration of Mg is gradually decreased along the stacking direction of the LED epitaxial slice in the GaN sublayers of Mg.
3. LED epitaxial slice according to claim 1 or 2, which is characterized in that the p-type InGaN layer includes more
A p-type InGaN sublayers, each stacking of the molar content of In along the LED epitaxial slice in the p-type InGaN sublayers
Direction gradually increases.
4. LED epitaxial slice according to claim 1 or 2, which is characterized in that In in the p-type InGaN layer
Molar content remains unchanged.
5. LED epitaxial slice according to claim 1 or 2, which is characterized in that the p-type InGaN layer is
InxGa1-xN layers, 0 ＜ x ＜ 0.25.
6. LED epitaxial slice according to claim 1 or 2, which is characterized in that the thickness of the p-type InGaN layer
For 20nm~50nm.
7. LED epitaxial slice according to claim 1 or 2, which is characterized in that the thickness of the P-type layer is
100nm~200nm.
8. a kind of production method of LED epitaxial slice, which is characterized in that the production method includes：
GaN buffer layers are grown on a sapphire substrate；
Layer of undoped gan is grown on the GaN buffer layers；
N-type GaN layer is grown in the layer of undoped gan；
Active layer is grown in the N-type GaN layer；
Growing P-type layer on the active layer, the P-type layer include doping Mg GaN layer, it is described doping Mg GaN layer in Mg
Doping concentration gradually decreased along the stacking direction of the LED epitaxial slice, it is described doping Mg GaN layer in inserted with P
Type InGaN layer；
The thickness of the p-type InGaN layer is greater than or equal to 20nm, and the thickness of the P-type layer is greater than or equal to 100nm.
9. production method according to claim 8, which is characterized in that the GaN layer of the doping Mg includes multiple doping Mg
GaN sublayers, the doping concentration of Mg remains unchanged in the GaN sublayers of each doping Mg, GaN of multiple doping Mg
The doping concentration of Mg is gradually decreased along the stacking direction of the LED epitaxial slice in layer.
10. production method according to claim 8 or claim 9, which is characterized in that the p-type InGaN layer includes multiple p-types
InGaN sublayers, stacking direction of the molar content of In along the LED epitaxial slice in each p-type InGaN sublayers
It gradually increases.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1176498A (en) * | 1996-09-06 | 1998-03-18 | 东芝株式会社 | Compound semicoductor light-emitting device of gallium nitride series |
| CN1624939A (en) * | 2003-12-05 | 2005-06-08 | 炬鑫科技股份有限公司 | Gallium nitride series LED of high luminous effect and manufacturing method thereof |
| CN105229804A (en) * | 2013-05-22 | 2016-01-06 | 首尔伟傲世有限公司 | Luminescent device and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4261592B2 (en) * | 2007-04-16 | 2009-04-30 | 三菱電機株式会社 | Nitride semiconductor light emitting device |
| KR20130005495A (en) * | 2011-07-06 | 2013-01-16 | 삼성전자주식회사 | Nitride semiconductor light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1176498A (en) * | 1996-09-06 | 1998-03-18 | 东芝株式会社 | Compound semicoductor light-emitting device of gallium nitride series |
| CN1624939A (en) * | 2003-12-05 | 2005-06-08 | 炬鑫科技股份有限公司 | Gallium nitride series LED of high luminous effect and manufacturing method thereof |
| CN105229804A (en) * | 2013-05-22 | 2016-01-06 | 首尔伟傲世有限公司 | Luminescent device and preparation method thereof |
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