CN105974294B - A kind of real-time in-line testing system of semiconductor devices gamma Rays response - Google Patents
A kind of real-time in-line testing system of semiconductor devices gamma Rays response Download PDFInfo
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- CN105974294B CN105974294B CN201610518949.XA CN201610518949A CN105974294B CN 105974294 B CN105974294 B CN 105974294B CN 201610518949 A CN201610518949 A CN 201610518949A CN 105974294 B CN105974294 B CN 105974294B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
Abstract
The invention discloses a kind of real-time in-line testing systems of semiconductor devices gamma Rays response, including semiconductor devices gamma-rays test probe station and provide bias-pulse test measurement module, lead container, automatic sheet-fetching device and the four program-controlled feeler arms of built-in radioactive source are installed on the test probe station, wherein a probe is separately installed on three feeler arms, microscope is installed, three probes are connect with the bias-impulsive measurement module respectively on another feeler arm.The present invention carries out High Precision Long-distance to semiconductor devices and sets piece, acupuncture treatment, on-line testing is carried out to semiconductor devices radiation injury by program-controlled offer bias-pulse test measurement module later, and it can be biased while device under test is radiated, rapid saving measurement data.Piece is set using the system, has an acupuncture treatment, take piece precisely efficient, improves testing efficiency and measuring accuracy, avoids conventional radiation measurement means bring radiation injury degeneration.
Description
Technical field
The present invention relates to a kind of real-time in-line testing systems of semiconductor devices gamma Rays response.
Background technique
With the development of semiconductor material, very extensive application is suffered from various industries.Space technology among these,
Nuclear industry, nuclear power station and the electronic automation development for radiating class medical instrument, which all have with semiconductor material, closely to be contacted.
And the types of applications electronic equipment of these industries is all inevitably exposed in ionising radiation, therefore in these electronic equipments
In radiation injury of the semiconductor devices in radiation environment, radiate reliability research it is particularly significant.
Traditional semiconductor material ionising radiation reliability test is with radioactive source or x-ray generator to semiconductor devices
Carry out it is irradiated after, carry out radiation injury measurement and analysis again in another test platform, but this section of interval time can make
It obtains ionising radiation and apparent degeneration is had to damage caused by semiconductor material.In addition, traditional can for semicoductor radiating
It is second grade by property test speed, the radiation injury of semiconductor devices can also be degenerated in secondary test process.
Before this, there is the rdaiation response measurement method first closed and researched and developed " online ", i.e., while radiation half-and-half
Conductor device carries out traditional in real time I-V and C-V and measures.But this method has two disadvantages, first is that acupuncture treatment manually is needed, it is right
The security threat of operator is larger；Second is that being not bound with " real-time " measurement method, measuring speed is slower, can underestimate radiation damage
Wound.Before, the test of semicon industry and photovoltaic industry is all without carrying out semiconductor devices radiation damage with automatic prober platform
The application of wound.
On the other hand, the pulse test method in correlative study before, can only provide disposable measurement, and can not lead to
Setting is crossed, is just measured automatically at regular intervals.If pulse test to be applied to the test of rdaiation response, it is necessary to
Solve this problem.Furthermore more importantly, in rdaiation response test process, in a period of time of every minor tick, it is necessary to
Certain bias is provided, so that by radiation effects in semiconductor grid oxygen generated free electron hole directional
Grid oxygen-substrate interface is moved to, the defect capture present in grid oxygen, so that semiconductor devices generation rdaiation response is more quasi-
True is characterized.And equipment and technology before this does not have this function.
Therefore, it is necessary first to establish the semicoductor radiating damage measure probe station that can be had an acupuncture treatment with program controlled automatic, this was both
It is to carry out the guarantee of safety experiment, and realize the method that high-precision is had an acupuncture treatment；Secondly, being needed during using pulse test
It realizes that process control measurement module measures automatically at regular intervals, and in the radiative process not measured, measures
Module needs are biased by irradiation device automatically.Therefore, the indispensability for comprehensively considering the studies above, need one can half-and-half
The system that conductor device gamma Rays reliability real-time measurement and bias carry out on-line testing.
Summary of the invention
Object of the present invention is to：A kind of real-time in-line testing system of semiconductor devices gamma Rays response is provided, is solved
Semiconductor devices gamma Rays response test system is manual test in the prior art, acupuncture treatment inaccuracy, on-line testing do not have
Have combined with real-time testing, pulse test time point is unable to automatic programme control and implements, cannot apply among every two test point partially
The problems such as pressure.
The technical scheme is that：
A kind of real-time in-line testing system of semiconductor devices gamma Rays response, including semiconductor devices gamma-rays are surveyed
It tries probe station and bias-pulse test measurement module is provided, the facial pallor of built-in radioactive source is installed on the test probe station
Device, automatic sheet-fetching device and four program-controlled feeler arms, wherein a probe is separately installed on three feeler arms, another
Microscope is installed, three probes are connect with the bias-impulsive measurement module respectively on feeler arm.The lead container is placed in
It tests on the lead container pedestal of the program-controlled movement on probe station, is provided with radioactive source mouth at the top of lead container.Carry out semiconductor devices
When gamma Rays response test, the radioactive source mouth that device under test is transferred on lead container by automatic sheet-fetching device is first passed through, then lead to
Micro- sem observation device under test and three probe relative positions are crossed, three probes are moved to specific bit with program-controlled feeler arm
It postpones, while device under test is radiated, alternately applies bias and the pulse of specified time on device under test, to characterize
The rdaiation response of semiconductor devices.Above-mentioned film releasing, acupuncture treatment, test process are completed by process control.
Preferably, when automatic sheet-fetching device takes piece, device under test is placed below automatic sheet-fetching device, and automatic sheet-fetching device passes through company
It connects vacuum pump and generates suction appropriate, the device under test is sucked to the suction nozzle of automatic sheet-fetching device lower end, passes through meter later
Device under test is moved to the top of the radioactive source mouth of lead container by calculation machine control automatic sheet-fetching device by a shaft, by micro-
Device under test is placed on radioactive source mouth by program controlled automatic picture-taking device after sem observation.
Preferably, after device under test being placed on the radioactive source mouth on lead container in automatic sheet-fetching device, pass through computer
Program-controlled microscope focusing and mobile, observation device under test and probe relative position pass through computer program-control feeler arm for three later
Branch probe and lead container pedestal are moved to designated position, complete acupuncture treatment, and three probes complete device under test radiation injury measurement.
Preferably, the measurement module is after carrying out pulsatile once test, by a solid-state relay to circuit
Switch over, be biased to device under test so that by radiation effects in semiconductor grid oxygen generated free electron hole
Directional moves to grid oxygen-substrate interface, the defect capture present in grid oxygen, so that semiconductor devices generates spoke
Response is penetrated more accurately to be characterized.
Preferably, the process for carrying out rdaiation response test to semiconductor devices gamma-rays and being biased passes through program control
System is completed by computer operation.By computer installation, radiation injury test is being carried out to MOSFETs device and is being biased
When, the measurement module can pulsatile once test after, circuit is switched over by a solid-state relay, to
It surveys device to be biased, the size and time range of the bias are controllable.After bias, the measurement module leads to again
It crosses solid-state relay to switch over circuit, device under test carries out pulse test.
It is an advantage of the invention that：
The program-controlled autoemission probe system of the present invention carries out High Precision Long-distance to semiconductor devices and sets piece, acupuncture treatment, later
On-line testing is carried out to semiconductor devices radiation injury by program-controlled offer bias-pulse test measurement module, and can
To be biased while device under test is radiated, rapid saving measurement data.Piece is set using the system, has an acupuncture treatment, take piece smart
It is quasi- efficiently to improve testing efficiency and measuring accuracy, avoid conventional radiation measurement means bring radiation injury degeneration.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and embodiments：
Fig. 1 is the structural representation for the real-time in-line testing system that semiconductor devices gamma Rays of the invention respond
Figure；
Fig. 2 is the test schematic for the real-time in-line testing system that semiconductor devices gamma Rays of the invention respond；
Fig. 3 is program-controlled in the program-controlled instant test macro of semiconductor devices gamma-rays reliability of the present invention provides partially
Pressure-pulse：The structural schematic diagram of the measurement module of capacitance-voltage (C-V) test；
Fig. 4 is program-controlled in the program-controlled instant test macro of semiconductor devices gamma-rays reliability of the present invention provides partially
Pressure-pulse:The structural schematic diagram of the measurement module of current-voltage (I-V) test；
Wherein：The 1 test probe station 1 responded for semiconductor devices gamma Rays；2 provide bias-biography to be program-controlled
System/pulse test measurement module；3 be probe；4 be radioactive source；5 be lead container；6 be lead protection wall；7 be program-controlled probe
Arm；8 be program-controlled lead container pedestal；9 be automatic sheet-fetching device, and 10 be microscope；11 be device under test.
Specific embodiment
Above scheme is described further below in conjunction with specific embodiment.It should be understood that these embodiments are for illustrating
The present invention and be not limited to limit the scope of the invention.Implementation condition used in the examples can be done according to the condition of specific producer
Further adjustment, the implementation condition being not specified is usually normal condition.
As illustrated in fig. 1 and 2, the real-time in-line testing system of disclosed semiconductor devices gamma Rays response
System including semiconductor devices gamma-rays test probe station 1 and provides bias-pulse test measurement module 2, the test probe
Lead container 5, automatic sheet-fetching device 9 and the four program-controlled feeler arms 7 of built-in radioactive source 4 are installed, wherein three spies on platform 1
Be separately installed with a probe 3 in needle arm 7, microscope 10 be installed on another feeler arm 7, three probes 3 respectively with it is described
Bias-impulsive measurement module 2 connects.The lead container 5 is placed in the lead container pedestal of the program-controlled movement on test probe station 1
On 8, it is stamped lead protection wall 6 at the top of lead container 5, radioactive source mouth is provided in the middle part of lead protection wall 6.
When carrying out semiconductor devices gamma Rays response test, first passes through automatic sheet-fetching device 9 and shift device under test 11
Radioactive source mouth on to lead container 5, then device under test 11 and three 3 relative positions of probe are observed by microscope 10, with can journey
After three probes 3 are moved to designated position by the feeler arm 7 of control, while device under test 11 is radiated, pass through process control
At regular intervals with 2 device under test 11 of measurement module（Amount of radiation）It is automatic to carry out pulsatile once test, or pass through
Process control is biased with the time device under test 11 of each test interval of the measurement module 2.Above-mentioned film releasing, acupuncture treatment,
Test process is completed by process control.
When automatic sheet-fetching device 9 takes piece, device under test 11 is placed on 9 lower section of automatic sheet-fetching device, and automatic sheet-fetching device 9 passes through connection
Vacuum pump generates suction appropriate, and the device under test 11 is sucked to the suction nozzle of automatic sheet-fetching device lower end, passes through meter later
Device under test 11 is moved to the top of the radioactive source mouth of lead container 5 by calculation machine control automatic sheet-fetching device 9 by a shaft, is passed through
Device under test 11 is placed on radioactive source mouth by program controlled automatic picture-taking device 9 after microscope 10 is observed.Automatic sheet-fetching device 9 will be to be measured
After device 11 is placed on the radioactive source mouth on lead container 5, focused by computer program-control microscope 10 and mobile, observation to
Device 11 and 3 relative position of probe are surveyed, it is by computer program-control feeler arm 7 that three probes 3 and lead container pedestal 8 are mobile later
To designated position, acupuncture treatment is completed, three probes 3 complete that the radiation injury of the various chips including MOSFETs can be completed
Measurement.
The measurement module 2 cuts circuit by a solid-state relay after carrying out pulsatile once test
Change, be biased to device under test 11 so that by radiation effects in semiconductor grid oxygen generated free electron hole other side
Tropism moves to grid oxygen-substrate interface, the defect capture present in grid oxygen, rings so that semiconductor devices generates radiation
It should more accurately be characterized.After being biased to semiconductor devices, the measurement module 2 again by solid-state after
Electric appliance switches over circuit, and device under test 11 carries out pulse test.
Spoke of the real-time in-line testing system that the present invention is responded using semiconductor devices gamma Rays to semiconductor devices
It penetrates response to measure, with autoemission probe station, automatic sheet-fetching device is remotely controlled by computer program and places device to be measured
Part controls probe later, microscope is had an acupuncture treatment.Different from before automatic prober platform and hand-operated radiation response test system,
Using autoemission probe system, it can either realize that program controlled high precision sets piece, acupuncture treatment in the experimental situation of safety, can also obtain
Instant semiconductor devices radiation injury test result.
The measurement module of program-controlled offer bias-pulse test of the invention has automatic progress real-time measurement, applies
Bias, the function of recording data.In the test of semiconductor devices rdaiation response, need to treat while device under test radiates
Survey device be biased, so that by radiation effects in semiconductor grid oxygen generated free electron hole directional
Grid oxygen-substrate interface is moved to, the defect capture present in grid oxygen, so that semiconductor devices generation rdaiation response is more quasi-
True is characterized.So the measurement module can be arranged by calculating formula, after pulsatile once test, pass through
One solid-state relay is switched fast circuit, is biased to device under test, and the size and time range of the bias are equal
It is controllable.After bias, the measurement module switches over circuit again by solid-state relay, device under test into
Row pulse test.It generates pulse in a short time simultaneously and result is recorded, avoid device after radiation to the greatest extent
Influence of the recovery of degeneration to measurement.
As shown in Figures 3 and 4, program-controlled offer bias-pulse test measurement module 2 divides for bias-pulse：Capacitor-
The measurement module of voltage (C-V) test；Bias-pulse：The measurement module of current-voltage (I-V) test.It is program-controlled to provide partially
Pressure-pulse test measurement module carries out spoke after the acupuncture treatment that the radiation injury probe station carries out, to MOSFETs device
It penetrates damage measure and the process that is biased passes through process control and completed by computer operation, be biased to device under test,
Make by radiation effects in semiconductor grid oxygen generated free electron hole directional in this way moves to grid oxygen-substrate
Interface, the defect capture present in grid oxygen are more accurately characterized so that semiconductor devices generates rdaiation response.
1. carrying out radiation injury bias-pulse to semiconductor devices by computer installation：Capacitance-voltage (C-V) is surveyed
When examination, DC voltage source control solid-state relay is quickly adjusted to test pattern, and signal generator sends pulse signal to MOS
Device, forms small charging or discharging current in the MOS device, and the period of the pulse signal, voltage peak, edge rise
Time and number of pulses can be controlled according to computer program to change.Current/voltage amplifier is by capacitor element later
The charging or discharging current of generation amplifies and is converted into voltage signal.The voltage signal is acquired in real time by oscillograph and is being measured, and simultaneously
The data transmission of acquisition is returned into computer.After test, circuit is switched over by a solid-state relay, gives device to be measured
Part is biased, and the size and time range of the bias are controllable.After bias, the measurement module is again by solid
State relay switches over circuit, and device under test carries out tradition/pulse test.
2. carrying out radiation injury bias-pulse to MOSFETs device by computer installation：Current-voltage (I-V)
When test, DC voltage source control solid-state relay is quickly adjusted to test pattern, and signal generator sends pulse signal to
MOSFETs device generates Weak current in the MOSFETs device.Another DC voltage source 2 and concatenated with DC voltage source
The Weak current that MOSFETs device generates is amplified and is converted into voltage signal by variable resistance R.The voltage signal is by oscillograph
Acquisition is measuring in real time, and the data transmission of acquisition is returned computer simultaneously.After pulse test, pass through a solid-state relay
Device switches over circuit, is biased to device under test, and the size and time range of the bias are controllable.Terminate in bias
Afterwards, the measurement module switches over circuit again by solid-state relay, and device under test carries out tradition/pulse test.
The operation of the program-controlled instant test macro of specific semiconductor devices gamma-rays reliability, successively follows these steps
It carries out：
A. device under test is placed below automatic sheet-fetching device, program controlled automatic picture-taking device chip placement to lead can radioactive source
Above mouthful；
B. program-controlled feeler arm, by micro- sem observation device under test and probe relative position so that probe be moved to it is specified
Complete acupuncture treatment in position；
C. solid-state relay is quickly adjusted to test pattern, and device under test carries out pulse test；
D. solid-state relay is quickly adjusted to bias mode, and device under test is biased.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
It cans understand the content of the present invention and implement it accordingly, it is not intended to limit the scope of the present invention.It is all to lead according to the present invention
The modification for wanting the Spirit Essence of technical solution to be done, should be covered by the protection scope of the present invention.
Claims (5)
1. a kind of real-time in-line testing system of semiconductor devices gamma Rays response, including the test of semiconductor devices gamma-rays
Probe station（1）With offer bias-pulse test measurement module（2）, it is characterised in that：The test probe station（1）Upper installation
There is built-in radioactive source（4）Lead container（5）, automatic sheet-fetching device（9）And four program-controlled feeler arms（7）, wherein three probes
Arm（7）On be separately installed with a probe（3）, another feeler arm（7）On microscope is installed（10）, three probes（3）Point
Not with the bias-impulsive measurement module（2）Connection；The measurement module（2）After carrying out pulsatile once test, pass through
One solid-state relay switches over circuit, gives device under test（11）It is biased, so that by radiation effects in semiconductor gate
Generated free electron hole directional moves to grid oxygen-substrate interface on oxygen, the defect capture present in grid oxygen,
It is more accurately characterized so that semiconductor devices generates rdaiation response；End is being biased to semiconductor devices
Afterwards, the measurement module（2）Circuit is switched over again by solid-state relay, device under test（11）Carry out pulse survey
Examination.
2. the real-time in-line testing system of semiconductor devices gamma Rays response according to claim 1, it is characterised in that：
The lead container（5）It is placed in test probe station（1）On program-controlled movement lead container pedestal（8）On, lead container（5）Top
It is provided with radioactive source mouth.
3. the real-time in-line testing system of semiconductor devices gamma Rays response according to claim 2, feature exist
In：When carrying out semiconductor devices gamma Rays response test, automatic sheet-fetching device is first passed through（9）By device under test（11）It is transferred to
Lead container（5）On radioactive source mouth, then pass through microscope（10）Observe device under test（11）With three probes（3）Relative position,
With program-controlled feeler arm（7）By three probes（3）After being moved to designated position, in device under test（11）While radiation,
In device under test（11）The upper bias for alternately applying specified time and pulse, to characterize the rdaiation response of semiconductor devices.
4. the real-time in-line testing system of semiconductor devices gamma Rays response according to claim 3, feature exist
In：Automatic sheet-fetching device（9）When taking piece, device under test（11）It is placed on automatic sheet-fetching device（9）Lower section, automatic sheet-fetching device（9）Pass through
It connects vacuum pump and generates suction appropriate, by the device under test（11）It sucks to the suction nozzle of automatic sheet-fetching device lower end, later
Automatic sheet-fetching device is controlled by computer（9）By device under test（11）Lead container is moved to by a shaft（5）Radioactive source
The top of mouth, passes through microscope（10）Program controlled automatic picture-taking device after observation（9）By device under test（11）It is placed on radioactive source mouth.
5. the real-time in-line testing system of semiconductor devices gamma Rays response according to claim 4, feature exist
In：In automatic sheet-fetching device（9）By device under test（11）It is placed on lead container（5）On radioactive source mouth on after, pass through computer journey
Control microscope（10 ）Focusing and mobile, observation device under test（11）And probe（3）Relative position passes through computer program-control later
Feeler arm（7）By three probes（3）With lead container pedestal（8）It is moved to designated position, completes acupuncture treatment, three probes are completed to be measured
Device（11）Radiation injury measurement.
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| LU501011A1 (en) * | 2020-12-14 | 2022-06-14 | Univ Mons | Analyzing apparatus |
| LU501688B1 (en) * | 2022-03-18 | 2023-09-20 | Univ Mons | Analyzing apparatus |
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| CN112334783B (en) * | 2018-06-21 | 2024-03-22 | 三菱电机株式会社 | Reliability evaluation device for semiconductor element and reliability evaluation method for semiconductor element |
| US11209479B2 (en) | 2019-10-29 | 2021-12-28 | International Business Machines Corporation | Stressing integrated circuits using a radiation source |
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