CN105967499A - Preparation technology of quartz glass plate - Google Patents
Preparation technology of quartz glass plate Download PDFInfo
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- CN105967499A CN105967499A CN201610309895.6A CN201610309895A CN105967499A CN 105967499 A CN105967499 A CN 105967499A CN 201610309895 A CN201610309895 A CN 201610309895A CN 105967499 A CN105967499 A CN 105967499A
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- quartz glass
- plasma
- glass plate
- preparation technology
- sio
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
Abstract
The invention discloses a preparation technology of a quartz glass plate. The preparation technology of the quartz glass plate comprises the steps of selecting SiCl4 as a raw material; utilizing a high-frequency plasma generator to couple with a light through an induction coil, enabling gas in the light to ionize to produce a plasma, utilizing a plasma fire to heat a quartz matrix, carrying SiCl4 gas molecule by current-carrying gas, jetting the SiCl4 gas molecule into the plasma fire through a feed pipe, and carrying out oxidation reaction under the high temperature function in the fire to generate SiO2; nucleating the SiO2 molecules generated by reaction in the plasma fire, colliding and aggregating to form larger particles; enabling the aggregated SiO2 particles in the plasma fire to arrive at a boundary layer along with a high-temperature fire airflow, and passing the SiO2 particles through the boundary layer to arrive at the surface of the quartz matrix; depositing the SiO2 particles passing through the boundary layer on the surface of the quartz matrix to form a deposition layer; fusing the SiO2 particles deposited on the surface of the quartz matrix under the heating action of the plasma fire to form quartz glass liquid; adopting a PCVD (Plasma Chemistry Vapor Deposition) technology to prepare super pure quartz glass without macroscopic bubbles, which can meet the requirement of full spectrum approval.
Description
Technical field
The present invention relates to quartz glass production technical field, be specifically related to the preparation technology of a kind of quartz glass plate.
Background technology
Quartz glass is strong due to key the highest between close structure and atom, thus has the heat shock resistance of low thermal coefficient of expansion, electrical conductivity and excellence, anticorrosive and spectral transmission performance.Excellent combination property has become it and has applied the basis in high-tech sector, is widely used in optics, opto-electronic device and microwave dielectric material.Along with the development of space technology, having higher requirement the performance of quartz glass, quartz glass prepared by general chemistry vapour deposition (CVD) method owing to can not meet requirement containing great amount of hydroxy group.Recently high-frequency plasma chemical gaseous phase deposition (PCVD) technology is widely used in optical fibers, nano material, the preparation of thin film and the heat treatment of material, the thermal source of its cleaning ensure that the purity of material, avoid secondary pollution, but seldom report in China with the research of plasma torch vapour deposition process synthetic quartz glass.
Summary of the invention
For problem above, the invention provides the preparation technology of a kind of quartz glass plate, use the preparation of high-frequency plasma chemical vapour deposition technique without the super pure silica glass of macroscopic view bubble, by to chemical reaction, mass transport, the layer that passes across the border, particle deposition and glass melting and the chemistry in 5 stages of gas desorption, the analysis of Physical Mechanism, can reach the requirement that full spectrum passes through, can effectively solve the problem in background technology.
To achieve these goals, the technical solution used in the present invention is as follows: the preparation technology of a kind of quartz glass plate, comprises the steps:
(1) raw material is chosen: choose SiCl4As raw material；
(2) in the chemical reaction stage: with high-frequency plasma generator, couple light fixture by induction coil, make the gas ionization in light fixture produce plasma, utilize plasma flame that quartz substrate is heated, SiCl4Gas molecule is carried by current-carrying gas and is injected into plasma torch by charge pipe, occurs oxidation reaction to generate SiO under flame inside high temperature action2；
(3) the mass transport stage: the SiO that reaction generates2Molecule is at plasma flame internal nucleation and collides reunion, forms larger particles；
(4) pass across the border layer: the SiO of reunion2Microgranule in plasma flame with high temperature flame flow arrive boundary region, SiO2The microgranule layer that passes across the border arrives at quartz substrate surface；
(5) depositional phase: through the SiO of boundary region2Particle deposition, on quartz substrate surface, forms sedimentary；
(6) melted and gas desorption stage: be deposited on the SiO on quartz substrate surface2Microgranule is melted under plasma torch heat effect forms quartz glass liquid.
(7) molding.
As a kind of preferably technical scheme of the present invention, the chemical equation in described step (1) chemical reaction stage is:
SiCl4+O2=SiO2+2Cl2。
As a kind of preferably technical scheme of the present invention, in described step (6), after melted formation quartz glass liquid, desorb parcel SiO simultaneously2The gas of microgranule and the gas of matrix surface.
As a kind of preferably technical scheme of the present invention, the forming method of described step (7) comprises the steps:
(7a) quartz glass liquid is injected in cavity body of mould；
(7b), after cooling, cut and obtain finished product.
As a kind of preferably technical scheme of the present invention, the thickness of described glass plate is 8-50mm.
As a kind of preferably technical scheme of the present invention, the width of described glass plate is more than 30mm.
As a kind of preferably technical scheme of the present invention, the dynamic viscosity of described vitreous humour is at below 106poise.
Beneficial effects of the present invention:
The present invention uses the preparation of high-frequency plasma chemical vapour deposition technique without the super pure silica glass of macroscopic view bubble, by to chemical reaction, mass transport, the layer that passes across the border, particle deposition and glass melting and the chemistry in 5 stages of gas desorption, the analysis of Physical Mechanism, can reach the requirement that full spectrum passes through.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Embodiment
The preparation technology of a kind of quartz glass plate, comprises the steps:
(1) raw material is chosen: choose SiCl4As raw material；Its chemical equation is:
SiCl4+O2=SiO2+2Cl2。
(2) in the chemical reaction stage: with high-frequency plasma generator, couple light fixture by induction coil, make the gas ionization in light fixture produce plasma, utilize plasma flame that quartz substrate is heated, SiCl4Gas molecule is carried by current-carrying gas and is injected into plasma torch by charge pipe, occurs oxidation reaction to generate SiO under flame inside high temperature action2；
(3) the mass transport stage: the SiO that reaction generates2Molecule is at plasma flame internal nucleation and collides reunion, forms larger particles；
(4) pass across the border layer: the SiO of reunion2Microgranule in plasma flame with high temperature flame flow arrive boundary region, SiO2The microgranule layer that passes across the border arrives at quartz substrate surface；
(5) depositional phase: through the SiO of boundary region2Particle deposition, on quartz substrate surface, forms sedimentary；
(6) melted and gas desorption stage: be deposited on the SiO on quartz substrate surface2Microgranule is melted under plasma torch heat effect forms quartz glass liquid, and the dynamic viscosity of described vitreous humour, at below 106poise, after melted formation quartz glass liquid, desorbs parcel SiO simultaneously2The gas of microgranule and the gas of matrix surface.
(7) molding: quartz glass liquid is injected in cavity body of mould；After cooling, cutting and obtain finished product, the thickness of described glass plate is 8-50mm, and the width of described glass plate is more than 30mm.
In the present invention, material containing oxygen is 2.2m/s with the mixed gas of SiCl4 at blanking mouth of pipe exit velocity, less than plasma flame speed 5.83m/s.Oxygen is injected into plasma flame with SiCl4 mixed gas from the charging mouth of pipe, owing to its speed is less than flame speed, mix with flame after entering flame, speed gradually reaches unanimity, calculate with flame speed and export to quartz substrate time Tt from light fixture, light fixture exports away from quartz substrate 50mm, then Tt=0.0086s, flame temperature is with quartz substrate temperature 1800 DEG C calculating, then Tt is much larger than Ta, i.e. SiCl4 and oxygen reaction required time are much smaller than SiCl4 transport time, therefore it is believed that SiCl4 and oxygen complete chemical reaction and generate SiO2 once entering flame.
On quartz substrate surface, owing to adsorption forms border thin layer, SiO2 microgranule is caused barrier by boundary region, and layer particle that only pass across the border could be adsorbed.
The present invention, by oxidation reaction thermodynamic data, calculates the reaction equilibrium constant under different temperatures, is listed in the table below.
| T temperature/K | 298 | 500 | 1000 | 1500 | 2000 | 5000 |
| Kp | 2.6×1044 | 5.3×1028 | 1.6×1017 | 2.5×1013 | 3.4×1011 | 2.4×108 |
From result of calculation, the equilibrium constant of system is the biggest, it is believed that the oxidation reaction of SiCl4 will be fully completed.
Based on above-mentioned, it is an advantage of the current invention that, the present invention uses the preparation of high-frequency plasma chemical vapour deposition technique without the super pure silica glass of macroscopic view bubble, by to chemical reaction, mass transport, the layer that passes across the border, particle deposition and glass melting and the chemistry in 5 stages of gas desorption, the analysis of Physical Mechanism, can reach the requirement that full spectrum passes through.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendment, equivalent and improvement etc. made within the spirit and principles in the present invention, should be included within the scope of the present invention.
Claims (7)
1. the preparation technology of a quartz glass plate, it is characterised in that comprise the steps:
(1) raw material is chosen: choose SiCl4As raw material；
(2) in the chemical reaction stage: with high-frequency plasma generator, couple light fixture by induction coil, make the gas ionization in light fixture produce plasma, utilize plasma flame that quartz substrate is heated, SiCl4Gas molecule is carried by current-carrying gas and is injected into plasma torch by charge pipe, occurs oxidation reaction to generate SiO under flame inside high temperature action2；
(3) the mass transport stage: the SiO that reaction generates2Molecule is at plasma flame internal nucleation and collides reunion, forms larger particles；
(4) pass across the border layer: the SiO of reunion2Microgranule in plasma flame with high temperature flame flow arrive boundary region, SiO2The microgranule layer that passes across the border arrives at quartz substrate surface；
(5) depositional phase: through the SiO of boundary region2Particle deposition, on quartz substrate surface, forms sedimentary；
(6) melted and gas desorption stage: be deposited on the SiO on quartz substrate surface2Microgranule is melted under plasma torch heat effect forms quartz glass liquid；
(7) molding.
The preparation technology of a kind of quartz glass plate the most according to claim 1, it is characterised in that the chemical equation in described step (1) chemical reaction stage is:
SiCl4+O2=SiO2+2Cl2。
The preparation technology of a kind of quartz glass plate the most according to claim 1, it is characterised in that in described step (6), after melted formation quartz glass liquid, desorbs parcel SiO simultaneously2The gas of microgranule and the gas of matrix surface.
The preparation technology of a kind of quartz glass plate the most according to claim 1, it is characterised in that the forming method of described step (7) comprises the steps:
(7a) quartz glass liquid is injected in cavity body of mould；
(7b), after cooling, cut and obtain finished product.
The preparation technology of a kind of quartz glass plate the most according to claim 4, it is characterised in that the thickness of described glass plate is 8-50mm.
The preparation technology of a kind of quartz glass plate the most according to claim 4, it is characterised in that the width of described glass plate is more than 30mm.
The preparation technology of a kind of quartz glass plate the most according to claim 4, it is characterised in that the dynamic viscosity of described vitreous humour is at below 106poise.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610309895.6A CN105967499A (en) | 2016-05-11 | 2016-05-11 | Preparation technology of quartz glass plate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610309895.6A CN105967499A (en) | 2016-05-11 | 2016-05-11 | Preparation technology of quartz glass plate |
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| CN105967499A true CN105967499A (en) | 2016-09-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113770851A (en) * | 2021-10-10 | 2021-12-10 | 江苏富乐德石英科技有限公司 | Efficient quartz ring production process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101983179A (en) * | 2008-04-03 | 2011-03-02 | 赫罗伊斯石英玻璃股份有限两合公司 | Method for producing synthetic quartz glass |
| CN102583977A (en) * | 2012-03-02 | 2012-07-18 | 中国建筑材料科学研究总院 | Method for indirect synthesis of quartz glass, special equipment used therein and quartz glass |
| CN105502897A (en) * | 2016-01-12 | 2016-04-20 | 中国建筑材料科学研究总院 | Preparing method for ultra-pure quartz glass |
-
2016
- 2016-05-11 CN CN201610309895.6A patent/CN105967499A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101983179A (en) * | 2008-04-03 | 2011-03-02 | 赫罗伊斯石英玻璃股份有限两合公司 | Method for producing synthetic quartz glass |
| CN102583977A (en) * | 2012-03-02 | 2012-07-18 | 中国建筑材料科学研究总院 | Method for indirect synthesis of quartz glass, special equipment used therein and quartz glass |
| CN105502897A (en) * | 2016-01-12 | 2016-04-20 | 中国建筑材料科学研究总院 | Preparing method for ultra-pure quartz glass |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113770851A (en) * | 2021-10-10 | 2021-12-10 | 江苏富乐德石英科技有限公司 | Efficient quartz ring production process |
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Application publication date: 20160928 |
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