CN105965120B - 一种GaAs微波功放芯片的半自动共晶焊接方法及产品 - Google Patents
一种GaAs微波功放芯片的半自动共晶焊接方法及产品 Download PDFInfo
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Abstract
本发明公开了一种GaAs微波功放芯片半自动共晶焊接方法,其包括:(1)对载体、焊料和裸芯片进行清洁;(2)对功放裸芯片进行搪锡;(3)对载体进行搪锡;以及(4)共晶焊接,即对搪锡裸芯片预热,对已安装有搪锡载体的共晶加热焊台进行加热并同步打开氮气进行保护,吸取裸芯片并停止加热辅助加热台,待共晶加热焊台升温至一定温度以上时,将裸芯片对位准确后摩擦共晶在载体上;待载体在空气中自然冷却后清洗干净。本发明还公开了该方法制备的相应的GaAs微波功放芯片。本发明通过对具体工艺中的清洁、预热、搪锡等工艺细节进行控制,并优化其中的工艺参数,从而可以制备得到空洞率较小、虚焊少和性能优良的芯片,焊接成功率大大提高。
Description
技术领域
本发明属于GaAs微波功放芯片技术领域,具体涉及一种GaAs微波功放芯片共晶焊接方法及其制备的产品。
背景技术
GaAs微波功放芯片与基体(基板)的连接需要有良好的微波接地能力(低欧姆接触)和较好的散热能力,业内通常选用金锡合金的焊料进行共晶焊接。
目前,现有技术中一种典型的方案是采用半自动共晶贴片机进行GaAs微波功放芯片的共晶焊接,该焊接工艺具体过程包括:先在预先设定高于300℃的共晶焊台上放上载体,释放氮气对载体工作面进行保护,加热到300℃±10℃时,吸取金锡焊片放到载体上需焊接的位置,手动控制设备所带真空吸笔去夹取要焊接的芯片,放到熔化了的焊料上按照设定的共晶程序进行摩擦焊接,再关闭加热焊台,缓慢冷却后关闭氮气。
该工艺方法进行共晶焊接时,焊料可以融化充分,但是,该方案中芯片四周焊料溢出不均匀,且空洞面积较大,一般为20%左右,在一些要求高频段、接地电阻低的产品中,该空洞率无法满足使用要求。另外,由于金锡焊料流动性较差、芯片高温下易污染氧化等原因,芯片半自动共晶焊接易发生虚焊,一次焊接成功率较低。
发明内容
针对现有技术的以上缺陷或改进需求,本发明提供了一种GaAs微波功放芯片半自动共晶焊接方法及其制备得到的产品,其通过对具体工艺中的清洁、预热、搪锡等工艺细节进行控制,并优化其中的工艺参数,从而可以制备得到空洞率较小、虚焊少和性能优良的芯片,焊接成功率大大提高。
为实现上述目的,按照本发明的一个方面,提供一种GaAs微波功放芯片半自动共晶焊接方法,其包括:
(1)对载体、焊料和裸芯片进行清洁
将载体、焊料浸入无水乙醇中,浸泡半小时后用超声波清洗1min,晾干待用;
采用等离子对裸芯片进行清洗,去除焊接面的氧化物和有机污染物;
(2)对功放裸芯片进行搪锡,具体为:
将裸芯片固定在共晶加热焊台上,对共晶加热焊台进行加热,同步打开氮气进行保护;
升温至将焊料片放于所述裸芯片上,并控制搪锡工装摩擦焊料片,使熔化后的焊料片薄层均匀平铺在裸芯片上;
取下裸芯片放于隔热垫上,降温后关闭氮气保护;
(3)对载体进行搪锡,具体为:
将载体固定在共晶加热焊台上,对共晶加热焊台进行加热,同步打开氮气进行保护;
升温将焊料片放于载体上,控制搪锡工装摩擦焊料片,使熔化后的焊料片薄层均匀平铺在载体上;
关闭共晶加热焊台,降温后关闭氮气保护;
(4)共晶焊接,具体为:
对搪锡裸芯片预热,对已安装有搪锡载体的共晶加热焊台进行加热并同步打开氮气进行保护,在共晶加热焊台升温后,吸取裸芯片并停止加热辅助加热台,待共晶加热焊台升温至一定温度以上时,将裸芯片对位准确后摩擦共晶在载体上;
关闭共晶加热焊台,取下载体放于隔热垫上,待载体和裸芯片的温度降低后关闭氮气保护;
待载体在空气中自然冷却后清洗干净,共晶焊接完成。
作为本发明的进一步优选,所述共晶焊接中,所述一定温度优选为260℃-300℃,更优选是290℃。
作为本发明的进一步优选,所述共晶焊接中,辅助加热台升温至220℃-240℃范围时吸取裸芯片,优选是230℃。
作为本发明的进一步优选,所述裸芯片或载体搪锡中,焊料片放于所述裸芯片或焊料片放于载体上的温度优选为220℃-240℃,更优选是230℃。
作为本发明的进一步优选,所述裸芯片搪锡的步骤中,焊料片的尺寸优选约为裸芯片面积的75%。
作为本发明的进一步优选,所述载体搪锡的步骤中,焊料片尺寸优选约为载体面积的 80%。
按照本发明的另一方面,提供一种利用上述方法制备的GaAs微波功放芯片。
本发明通过清洁、预热、搪锡等工艺细节控制的方法,提高GaAs微波功放芯片半自动共晶焊接合格率。总体而言,通过本发明所构思的以上技术方案与现有技术相比,具有以下有益效果:
(1)本发明中,通过清洁芯片、载体和金锡焊料片,解决了芯片、载体和金锡焊料片表面氧化的问题;
(2)本发明中,通过对芯片和载体进行搪锡,破坏焊接面的氧化膜,增加芯片和载体的可焊性;
(3)本发明中,通过对芯片和载体进行预热,模拟焊接温度曲线获得合适的温升温降速率和恒温平台时间,使焊料、被焊器件焊接时释放的气体能充分的排放,以降低焊接空洞率。
(4)本发明采取了清洁、预热、搪锡等工艺细节控制的方法,通过该方法,降低了共晶焊接的空洞率,提高GaAs微波功放芯片半自动共晶焊接合格率。
(5)本发明使用传统的半自动共晶焊接机,通过工艺细节优化、控制的方法,降低了芯片共晶焊接的空洞率,提高了焊接质量,使用方便,成本低廉,无需升级使用价格昂贵的真空(或可控气氛)焊接设备,即得到了高质量的共晶焊接质量,适用于小批量多品种大功率裸芯片的共晶焊接生产。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。此外,下面所描述的本发明各个实施方式中所涉及到的技术特征只要彼此之间未构成冲突就可以相互组合。
按照本发明一个实施例的GaAS微波功放芯片的半自动共晶焊接工艺方法,其通过在现有共晶焊接方法的基础上增加了对芯片进行清洁、预热,并对芯片、载体进行搪锡的工艺步骤,优化了工艺参数,从而可以制备得到空洞率较小、虚焊少和性能优良的芯片,焊接成功率大大提高。
具体地,该共晶焊接工艺方法的具体步骤包括:
(1)清洁
在超声波清洗机中倒入无水乙醇,将载体、焊料浸入无水乙醇中,浸泡半小时后用超声波清洗1min,晾干待用。对于裸芯片焊接面的清洁,采用等离子清洗去除氧化物和有机污染物;
(2)共晶贴片机参数设置(本实施例中以WESTBOND 7316C型共晶贴片机为例):
共晶加热台温度设定为300℃±10℃,另选用一辅助加热台,温度设定为200℃;设置工具热:实测为250℃;
在一个实施例中,共晶工艺参数设置见表1。
表1
(3)搪锡
3.1对功放裸芯片进行搪锡:
1)用工装夹具将裸芯片固定在加热焊台上,要求裸芯片镀金焊接面朝上,裸芯片四周和电路面用高温胶带进行防护;将专用搪锡工装安装在真空吸头上;
2)裁剪金锡焊料片Au80Sn20(优选尺寸约为裸芯片面积的75%,一般是70%-80%);
3)对共晶加热焊台进行加热,同步打开氮气,升温至220℃-240℃(优选230℃)时,用镊子将焊料片放于裸芯片上,待焊台升温至260℃-300℃以上(优选290℃以上)时,控制真空吸嘴上的搪锡工装摩擦焊料片,使熔化后的焊料片薄层均匀平铺在裸芯片上,裸芯片经受(300±10)℃时间不超过20s,焊料不能污染裸芯片电路面;
4)关闭共晶加热焊台和主机,取下裸芯片放于隔热垫上,降温约2min后关闭氮气。高热的裸芯片取下时不能直接放于金属面,避免急速降温导致裸芯片破裂。
3.2对载体进行搪锡:
1)用工装夹具将载体固定在加热焊台上;
2)裁剪金锡焊料片Au80Sn20(优选尺寸约为载体面积的80%,一般是75%-85%);
3)对共晶加热焊台进行加热,同步打开氮气,升温至220℃-240℃(优选230℃)时,用镊子将焊料片放于载体上,待焊台升温至260℃-300℃以上(优选290℃以上)时,控制真空吸嘴上的搪锡工装摩擦焊料片,使熔化后的焊料片薄层均匀平铺在载体上,载体经受(300±10)℃时间不超过20s;
4)关闭共晶加热焊台和主机,降温例如约2min后关闭氮气。
(4)共晶焊接
4.1用无水乙醇清洁吸嘴,确保吸嘴上无残留锡渣。将同裸芯片尺寸匹配的吸嘴安装在真空吸头上;
4.2用辅助加热台对搪锡裸芯片预热,并同步打开氮气和共晶加热焊台、主机,当共晶加热焊台(焊台上已安装搪锡后的载体)升温至220℃-240℃(优选230℃)时,用吸嘴吸取裸芯片并关闭辅助加热台,待共晶焊台升温至260℃-300℃以上(优选290℃以上)时,将裸芯片对位准确后摩擦共晶在载体上(此次共晶不再加焊料片),裸芯片经受(300±10)℃时间不超过20s;
4.3关闭共晶加热焊台和主机,取下载体放于隔热垫上,待载体和裸芯片的温度低于例如200℃时再关闭氮气。高热的载体取下时不能直接放于金属面,避免急速降温导致裸芯片破裂;
4.4待载体在空气中自然冷却后,优选30min内清洗干净,共晶焊接完成。
进行深入分析发现,芯片共晶焊接空洞率高主要由两个原因造成:一是芯片焊接面氧化,导致芯片可焊性差,共晶焊料和焊接面无法形成良好的共融合金,造成焊接空洞率高;二是金锡焊料流动性较锡铅焊料差,若是焊接过程中焊料不能均匀的铺开在芯片全部焊接面,则焊料固化后高低不平形成空洞或虚焊。本方案从清除芯片氧化物和提高可焊性入手,在现有共晶焊接方法的基础上增加了对芯片进行清洁、预热,并对芯片、载体进行搪锡的工艺步骤,优化了工艺参数,使焊料融化充分,芯片四周焊料溢出均匀,降低了共晶焊接的空洞率,获得了满意的焊接质量。
另外,由于本方案中采用的是半自动共晶焊接机自带的恒温焊台,不同于脉冲焊台或真空焊接设备可以通过优化焊接温度曲线来获得合适的温升温降速率和恒温平台时间,使焊料、被焊器件焊接时释放的气体能充分的排放,以降低焊接空洞率。恒温焊台只能设置 一个焊接温度,为此,在共晶焊接时另外使用了一台辅助加热台,在焊接前先对芯片和载体进行搪锡,破坏焊接面的氧化膜,增加芯片和载体的可焊性;再通过辅助焊台对芯片进行预热,待恒温焊台上放置的载体加热至合适温度后,用共晶焊台的加热真空吸嘴吸取芯片,此时载体和芯片上搪锡的金锡焊料已开始熔融,释放的气体开始排放,待恒温焊台达到焊接温度时,焊料中的气体已排放的较为充分,此时进行芯片和载体的摩擦共晶,摩擦使熔化焊料与固体镀层紧密接触,挤出剩余的气体,使熔化的焊料合金和基板的表面金层达到原子作用的距离,然后熔化的焊料会向金层中扩散,同时金层也会向液体焊料中溶解,二者相互作用发生共晶反应,冷却后则形成了机械强度较高的合金层,提高了焊接质量。
本发明的工艺方法通过使用证明安全、可靠,上述三项应用实例经过200倍显微镜和X光机检测:共晶焊接,焊料融化充分,芯片四周焊料溢出均匀,空洞部分在焊接区域内分布均匀,焊料流动性好,空洞面积约为7%,远优于GJB548B技术指标要求:接触区空洞总和不超过整个接触面积的50%;单个空洞不得横贯基板或半导体芯片的长度或宽度方向,并且不超过整个预定接触面积的10%。采取本方法的共晶焊接功放芯片一次成功率达到90%。
本发明使用传统的半自动共晶焊接机,通过工艺细节优化、控制的方法,降低了芯片共晶焊接的空洞率,提高了焊接质量,经过温度循环、温度冲击、随机振动等试验,共晶焊点无裂纹、不开裂。该工艺方法使用方便,成本低廉,无需升级使用价格昂贵的真空(或可控气氛)焊接设备,即得到了高质量的共晶焊接质量。适用于小批量多品种大功率裸芯片的共晶焊接生产。
本领域的技术人员容易理解,以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (4)
1.一种GaAs微波功放芯片半自动共晶焊接方法,其包括:
(1)对载体、焊料和裸芯片进行清洁
将载体、焊料浸入无水乙醇中,浸泡半小时后用超声波清洗1min,晾干待用;
采用等离子对裸芯片进行清洗,去除焊接面的氧化物和有机污染物;
(2)对功放裸芯片进行搪锡,具体为:
将裸芯片固定在共晶加热焊台上,对共晶加热焊台进行加热,同步打开氮气进行保护;
升温后将焊料片放于所述裸芯片上,并控制搪锡工装摩擦焊料片,使熔化后的焊料片薄层均匀平铺在裸芯片上,裸芯片经受(300±10)℃时间不超过20s;
取下裸芯片放于隔热垫上,降温后关闭氮气保护;
(3)对载体进行搪锡,具体为:
将载体固定在共晶加热焊台上,对共晶加热焊台进行加热,同步打开氮气进行保护;
升温至220℃-240℃后将焊料片放于载体上,控制搪锡工装摩擦焊料片,使熔化后的焊料片薄层均匀平铺在载体上,载体经受(300±10)℃时间不超过20s;
关闭共晶加热焊台,降温后关闭氮气保护;
(4)共晶焊接,具体为:
用辅助加热台对搪锡裸芯片预热,对已安装有搪锡载体的共晶加热焊台进行加热并同步打开氮气进行保护,在共晶加热焊台升温至220℃-240℃后,吸取裸芯片并停止加热辅助加热台,待共晶加热焊台升温至一定温度以上时,将裸芯片对位准确后摩擦共晶在载体上,裸芯片经受(300±10)℃时间不超过20s;
关闭共晶加热焊台,取下载体放于隔热垫上,待载体和裸芯片的温度降低后关闭氮气保护;
待载体在空气中自然冷却后清洗干净,共晶焊接完成。
2.根据权利要求1所述的一种GaAs微波功放芯片半自动共晶焊接方法,其中,所述裸芯片搪锡的步骤中,焊料片的尺寸为裸芯片面积的70%-80%。
3.根据权利要求1或2所述的一种GaAs微波功放芯片半自动共晶焊接方法,其中,所述载体搪锡的步骤中,焊料片尺寸为载体面积的75%-85%。
4.一种利用权利要求1-3中任一项所述的方法制备的GaAs微波功放芯片。
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