CN105957915A - High-temperature resistant solar spectrum selective absorption and radiation structure - Google Patents
High-temperature resistant solar spectrum selective absorption and radiation structure Download PDFInfo
- Publication number
- CN105957915A CN105957915A CN201610326036.8A CN201610326036A CN105957915A CN 105957915 A CN105957915 A CN 105957915A CN 201610326036 A CN201610326036 A CN 201610326036A CN 105957915 A CN105957915 A CN 105957915A
- Authority
- CN
- China
- Prior art keywords
- flat metal
- metal substrate
- resistant
- elevated temperatures
- absorbs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 7
- 238000001228 spectrum Methods 0.000 title abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000006096 absorbing agent Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 26
- 230000003595 spectral effect Effects 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 18
- 238000005286 illumination Methods 0.000 claims description 9
- 241000209094 Oryza Species 0.000 claims description 6
- 235000007164 Oryza sativa Nutrition 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 6
- 235000009566 rice Nutrition 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000008187 granular material Substances 0.000 abstract description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 238000000054 nanosphere lithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/30—Thermophotovoltaic systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Photovoltaic Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
A high-temperature resistant solar spectrum selective absorption and radiation structure disclosed by the present invention comprises an absorber and a radiator, and the materials of the absorber and the radiator are both high-temperature resistant materials. The absorber is used to absorb the incident sunlight selectively, and comprises a metal nanometer triangle granule array which is arranged according to a hexagonal close-packed structure and a first flat metal substrate, and the metal nanometer triangle granule array is constructed on the top surface of the first flat metal pedestal. The radiator is used to selectively radiate the photons matching the band gap of a solar cell and comprises a metal nanometer square array and a second flat metal pedestal, the metal nanometer square array is constructed on the bottom surface of the second flat metal substrate, and the bottom surface of the first flat metal pedestal is constructed on the top surface of the second flat metal pedestal. The high-temperature resistant solar spectrum selective absorption and radiation structure of the present invention realizes the effective modulation to the sunlight energy spectrums, and breaks through the utilization efficiency theory limit of the conventional solar cell to the sunlight.
Description
Technical field
The present invention relates to heliotechnics and application, be specifically related to one and can be applicable in solar thermal photovoltaic system
Resistant to elevated temperatures solar spectral selective absorb and irradiation structure.
Background technology
In today that Fossil fuel reduces increasingly, solar energy as a kind of new forms of energy because of its environmental protection, rich reserves,
Reproducible feature, by everybody common concern, in numerous Solar use modes, especially with solaode
This mode that primary energy can transfer to senior secondary energy sources, everybody is paid close attention to the most.In conventional solar cell
Field, energy can not be absorbed and used less than the incident photon of battery energy gap, and higher than the incident illumination of energy gap
Son, its energetic portions can be converted into thermal losses, here it is limit the bottleneck of solar-photovoltaic technology
Schockley-Queisser (SQ) limit.Under the constraint of the SQ limit, energy gap is the single node of 1.0eV
Semi-conductor cell in the case of total focus, its photoelectric transformation efficiency can only to 41%, non-focusing in the case of, just only
Remaining 30%.In order to break through this limit, there has been proposed solar thermal photovoltaic system, i.e. at incident illumination and battery
Between add selective absorbing-irradiation structure, this absorption-irradiation structure is by absorber and back-to-back group of irradiator two parts
Conjunction forms.Absorber is responsible for absorbing sunlight and being translated into heat energy, and with this heating radiator, irradiator then passes through
Thermal-radiating form gives off the photon matched with solaode energy gap.Through absorbing irradiation structure so
One inhales a process put, it is achieved that the modulation to solar energy Spectral structure, limits the generation of the SQ limit from source,
Greatly increasing the battery utilization rate to luminous energy, its theoretical limit efficiency, up to 85%, is the two of the SQ limit originally
Have a surplus again.Therefore, spectral selection absorbs irradiation structure is a part particularly important in solar thermal photovoltaic system.
In spectral selection absorption-irradiation structure, absorber is responsible for absorbing incident illumination, and determine system always inputs energy,
Therefore selective absorbing device must be the most powerful for the absorbability of sunlight, and absorption region can cover sunlight
All wave bands (0.3 μm is to 2.5 μm), absorb energy as much as possible, improve absorption-irradiation structure at thermal balance shape
Temperature under state, in order to irradiator can export higher-quality photon stream.The heat radiation of absorber self should be prevented simultaneously
Loss, to ensure sufficiently high thermal equilibrium temperature, additionally, exotic material also should be selected to manufacture, because work temperature
Degree is generally at about 2000K.At present, existing much about the research work of spectral selection absorber, such as based on
Tungsten and the microcellular structure of tantalum, pyramid structure etc., but its absorption efficiency is the most prominent, its structure is past simultaneously
Toward requiring higher depth-to-width ratio, such as paper " Nam, Youngsuk, et al.Solar Energy Materials and Solar
Cells 122 (2014): 287-296. " in require aperture 1.45 μm, hole depth 8 μm, this be highly detrimental to reality production
Manufacture.
In spectral selection absorption-irradiation structure, irradiator can be described as the parts of very core, it achieves the sun
The modulating action of spectrum, is the direct supplier of solaode photon energy, is also the pass overcoming SQ limit generation mechanism
Key place.According to the generation mechanism of the SQ limit, it is conceivable that preferably spectral selection irradiator should be: can suppress
Less than the photon radiation of battery energy gap, the photon radiation that energy is too high can be reduced again.So irradiator should be arrowband
Radiation, ties according to the calculating of paper " Rephaeli E, Fan S.Optics express, 2009,17 (17): 15145-15159. "
Really, the radiation bandwidth of irradiator is 0.07eV when, and solar battery efficiency reaches peak.Such as Andrej Lenert
Et al. work, use optical filter structure realize narrow wave radiation (Lenert, Andrej, et al.Nature
Nanotechnology 9.2 (2014): 126-130.), but this device need to operate under vacuum conditions, and used
The optical filter that is made up of silicon and silicon dioxide of radiating element, its fusing point too low (about 1000K), be not suitable for height
Temperature environment, finally tests the efficiency obtained and is only 3.2%, still have the biggest room for promotion.In addition, major part is reported
The research in road the most only devises the light within the irradiator in broadband, i.e. cutoff wavelength and can radiate, and the most deliberately goes to press down
High-energy radiation processed.
Therefore, solar spectral selective absorption-irradiation structure still has the space of the highest transformation and lifting, designs
Simple in construction, excellent performance and resistant to elevated temperatures solar spectral selective absorb irradiation structure for solving existing research
The bottleneck that report system is faced will have very important realistic meaning and using value.
Summary of the invention
It is an object of the invention to, for above-mentioned the deficiencies in the prior art, provide a kind of high temperature resistant for solar thermal photovoltaic system
Solar spectral selective absorb and irradiation structure.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of resistant to elevated temperatures solar spectral selective absorbs and irradiation structure, including absorber and irradiator, described suction
The material receiving device and irradiator employing is resistant to elevated temperatures metal material；
Described absorber, for the sunlight of selective absorbing incidence, is received including the metal arranged by HCP structure
Rice triangular shape particle array and the first flat metal substrate, described metal nano triangular shape particle Array Construction is flat in first
The end face of whole metallic substrates；
Described irradiator goes out, for selective radiation, the photon matched with solaode energy gap, receives including metal
Rice square array and the second flat metal substrate, described metal nano square Array Construction is in the second flat metal substrate
Bottom surface；
The bottom surface of described first flat metal substrate is implemented in the end face of the second flat metal substrate.
Preferably, the spectral absorption selectivity of described absorber is by the size of metal nano triangular shape particle array and material
Regulated and controled.
Preferably, the spectral radiance selectivity of described irradiator is regulated and controled by size and the material of metal nano square array.
Preferably, the size of described metal nano triangular shape particle array is by using environment to determine.
Preferably, the size of described metal nano square array is determined by selected solaode band gap width.
Preferably, the thickness of described first flat metal substrate is deep in the transmission of the first flat metal substrate more than incident illumination
Degree.
Preferably, the thickness of described second flat metal substrate is deep in the transmission of the second flat metal substrate more than incident illumination
Degree.
Preferably, the material that described metal nano triangular shape particle array and the first flat metal substrate use is identical.
Preferably, the material that described metal nano square array and the second flat metal substrate use is identical.
The present invention compared with prior art, has the advantage that and beneficial effect:
1, the absorber of the present invention and the material of irradiator employing are resistant to elevated temperatures metal material, can arrive at 2000K
Normally working under the high temperature of 3000K, the size optimized according to actual operation requirements and material, solar energy is turned by it
Changing efficiency and exceeded the SQ limit (41%) of conventional solar cell, performance is the most excellent.
2, the metal nano triangular shape particle array of the present invention, the first flat metal substrate, the second flat metal substrate,
Metal nano square array is from top to bottom arranged in order, simple in construction, and its depth-to-width ratio will be little relative to existing structure.
3, the bottom surface of the first flat metal substrate is implemented in the end face of the second flat metal substrate by the present invention, to ensure to inhale
Receive and have good heat conductivity between device and irradiator.
4, the serious forgiveness of the present invention is high, easily fabricated, integral structure, stability high, can be in solar thermal photovoltaic system
System is used widely.
Accompanying drawing explanation
Fig. 1 is that the solar spectral selective of the present invention absorbs the perspective view with irradiation structure.
Fig. 2 is that the solar spectral selective of the present invention absorbs and the absorber top view in irradiation structure.
Fig. 3 is the sectional view of the dotted line intercepting along Fig. 5.
Fig. 4 is simulation result and the energy of solar spectrum of absorber absorption spectra under plane wave vertical incidence of the present invention
Intensity；
Fig. 5 is that the solar spectral selective of the present invention absorbs and the irradiator top view in irradiation structure.
Fig. 6 is the sectional view of the dotted line intercepting along Fig. 2.
Fig. 7 is the irradiator of the present invention radiation spectrum simulation result when temperature T=2000K and preferable blackbody spectrum of radiation
Curve chart.
Fig. 8 is that the solar spectral selective of the present invention absorbs the solar battery efficiency with irradiation structure along with temperature change
Situation about changing, and SQ limit position.
Wherein, 1-metal nano triangular shape particle array, 2-the first flat metal substrate, 3-metal nano square array,
4-the second flat metal substrate.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention do not limit
In this.
Embodiment 1:
As it is shown in figure 1, the solar spectral selective of the present embodiment absorbs and irradiation structure, including absorber and radiation
Device；Described absorber, for the sunlight of selective absorbing incidence, is received including the metal arranged by HCP structure
Rice triangular shape particle array 1 and the first flat metal substrate 2, described metal nano triangular shape particle array 1 is implemented in the
The end face of one flat metal substrate 2；Described irradiator goes out and solaode energy gap phase for selective radiation
The photon joined, including metal nano square array 3 and the second flat metal substrate 4, described metal nano square array 3
It is implemented in the bottom surface of the second flat metal substrate 4；It is smooth that the bottom surface of described first flat metal substrate 2 is implemented in second
The end face of metallic substrates 4, to ensure to have good heat conductivity between absorber and irradiator.
As shown in Figures 2 and 3, in the present embodiment, the material that absorber uses is tungsten to the structure of described absorber,
In absorber, the thickness of the first flat metal substrate 2 is sufficiently thick, it is ensured that light tight, say, that the first flat metal
The thickness of substrate 2 is more than the incident illumination transmission depth in the first flat metal substrate 2, metal nano triangular shape particle battle array
Row 1 are obtained by Nanosphere lithography technique, a diameter of 1 μm of nanosphere, and the triangular shape particle formed is curl triangle
Shape granule, the gap between granule is 100nm, and the thickness of metal nano triangular shape particle array 1 is 1 μm.
As shown in Figure 4, light gray line is the energy intensity of solar spectrum, and pitch black line is the spectral absorptive capacity of absorber,
It can be seen that sunlight almost can be absorbed by absorber totally, simultaneously after the wavelength of 2 μm absorbance rapidly under
Fall, effectively reduces the thermal losses that long-wave radiation brings.
As it can be seen in figures 5 and 6, in the present embodiment, the material that irradiator uses is tantalum to the structure of described irradiator, spoke
In emitter, the thickness of metal nano square array 3 is 140nm, and the cycle is 500nm, and the length of side of each square is 470
Nm, the second flat metal substrate 4 thickness is sufficiently thick, it is ensured that light tight, say, that the second flat metal substrate 4
Thickness is more than the incident illumination transmission depth in the second flat metal substrate 4.
The material that the present embodiment relates to is exotic material, can bear the high temperature of about 2500K, as it is shown in fig. 7,
Light gray line is preferable blackbody spectrum of radiation, and pitch black line is the irradiator radiation spectrum simulation result when temperature T=2000K,
It can be seen that cutoff wavelength λ of irradiatorc=1.53 μm, are the narrow-band radiateds of bandwidth about 0.25 μm, had both inhibited length
Wave radiation, again limit shortwave radiation, can use in conjunction with the solaode that energy gap is 0.81eV.
The change that can calculate the present embodiment solar battery efficiency at different temperatures according to detailed balancing principle is bent
Line, as shown in Figure 8, it can be seen that after temperature reaches 1700K, the solar battery efficiency of this enforcement exceedes
The SQ limit, conversion ratio up to 51% time the highest.
Embodiment 2
The parameter of the present embodiment arranges and keeps consistent with embodiment 1；The material of described irradiator is tantalum, metal nano side
The thickness of block array 3 is 165nm, and the cycle is 500nm, and the length of side of each square is 475nm, the second flat metal
Substrate 4 thickness is sufficiently thick, it is ensured that light tight.Now cutoff wavelength λ of irradiatorc=1.77 μm, can be in conjunction with energy gap
Solaode for 0.7eV uses, and solar battery efficiency is up to 48%, and operating temperature is about 2000K.
Embodiment 3
The parameter of the present embodiment arranges and keeps consistent with embodiment 1；The material of described irradiator is tantalum, and described metal is received
The thickness of rice square array 3 is 200nm, and the cycle is 500nm, and the length of side of each square is 478nm, described radiation
Flat metal substrate 4 thickness of device is sufficiently thick, it is ensured that light tight.Now cutoff wavelength λ of irradiatorc=2.06 μm, can
Using in conjunction with the solaode that energy gap is 0.6eV, solar battery efficiency is up to 45%, and operating temperature is 2000
About K.
By selecting the irradiator of different physical dimensions, described solar spectral selective absorbs can quilt with irradiation structure
It is adjusted in different radiation cutoff wavelengths, to adapt to the solaode of different energy gap, and sun light absorption department
Point determine that, so its parameter is also relatively fixed, to ensure that described resistant to elevated temperatures solar spectral selects because of solar spectrum
The conversion that selecting property absorbs with irradiation structure is in optimum state.And the material selection for irradiator also can be by demand and suction
Receive device and keep consistent, be such as all tungsten material.
In sum, the material that the absorber of the present invention and irradiator use is resistant to elevated temperatures metal material, can be
Normally work under the high temperature of 2000K to 3000K, the metal nano triangular shape particle optimized according to actual operation requirements
Array and the size of metal nano square array and material, it has exceeded traditional solar-electricity to the transformation efficiency of solar energy
The SQ limit (41%) in pond, performance is the most excellent.
The above, patent preferred embodiment the most of the present invention, but the protection domain of patent of the present invention is not limited to
This, any those familiar with the art is in the scope disclosed in patent of the present invention, according to patent of the present invention
Technical scheme and patent of invention conceive equivalent or change in addition, broadly fall into the protection domain of patent of the present invention.
Claims (9)
1. a resistant to elevated temperatures solar spectral selective absorbs and irradiation structure, it is characterised in that: include absorber and
The material that irradiator, described absorber and irradiator use is resistant to elevated temperatures metal material；
Described absorber, for the sunlight of selective absorbing incidence, is received including the metal arranged by HCP structure
Rice triangular shape particle array and the first flat metal substrate, described metal nano triangular shape particle Array Construction is flat in first
The end face of whole metallic substrates；
Described irradiator goes out, for selective radiation, the photon matched with solaode energy gap, receives including metal
Rice square array and the second flat metal substrate, described metal nano square Array Construction is in the second flat metal substrate
Bottom surface；
The bottom surface of described first flat metal substrate is implemented in the end face of the second flat metal substrate.
The resistant to elevated temperatures solar spectral selective of one the most according to claim 1 absorbs and irradiation structure, and it is special
Levy and be: the spectral absorption selectivity of described absorber is adjusted by size and the material of metal nano triangular shape particle array
Control.
The resistant to elevated temperatures solar spectral selective of one the most according to claim 1 absorbs and irradiation structure, and it is special
Levy and be: the spectral radiance selectivity of described irradiator is regulated and controled by size and the material of metal nano square array.
The resistant to elevated temperatures solar spectral selective of one the most according to claim 1 absorbs and irradiation structure, and it is special
Levy and be: the size of described metal nano triangular shape particle array is by using environment to determine.
The resistant to elevated temperatures solar spectral selective of one the most according to claim 1 absorbs and irradiation structure, and it is special
Levy and be: the size of described metal nano square array is determined by selected solaode band gap width.
The resistant to elevated temperatures solar spectral selective of one the most according to claim 1 absorbs and irradiation structure, and it is special
Levy and be: the thickness of described first flat metal substrate is more than the incident illumination transmission depth in the first flat metal substrate.
The resistant to elevated temperatures solar spectral selective of one the most according to claim 1 absorbs and irradiation structure, and it is special
Levy and be: the thickness of described second flat metal substrate is more than the incident illumination transmission depth in the second flat metal substrate.
The resistant to elevated temperatures solar spectral selective of one the most according to claim 1 absorbs and irradiation structure, and it is special
Levy and be: the material that described metal nano triangular shape particle array and the first flat metal substrate use is identical.
The resistant to elevated temperatures solar spectral selective of one the most according to claim 1 absorbs and irradiation structure, and it is special
Levy and be: the material that described metal nano square array and the second flat metal substrate use is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610326036.8A CN105957915B (en) | 2016-05-16 | 2016-05-16 | A kind of heat safe solar spectral selective absorbs and irradiation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610326036.8A CN105957915B (en) | 2016-05-16 | 2016-05-16 | A kind of heat safe solar spectral selective absorbs and irradiation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105957915A true CN105957915A (en) | 2016-09-21 |
| CN105957915B CN105957915B (en) | 2018-07-06 |
Family
ID=56912893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610326036.8A Expired - Fee Related CN105957915B (en) | 2016-05-16 | 2016-05-16 | A kind of heat safe solar spectral selective absorbs and irradiation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105957915B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601830A (en) * | 2016-12-27 | 2017-04-26 | 张四清 | High-efficiency solar energy utilization system |
| CN107482994A (en) * | 2017-08-22 | 2017-12-15 | 郑义 | A kind of selective thermal transmitter for thermal photovoltaic system |
| CN108667394A (en) * | 2018-05-09 | 2018-10-16 | 万成龙 | A kind of Meta Materials of nanostructure |
| CN111123531A (en) * | 2019-12-29 | 2020-05-08 | 中国科学院西安光学精密机械研究所 | Antireflection micro-nano structure array based on space shaping |
| CN113035979A (en) * | 2021-03-09 | 2021-06-25 | 南京大学 | Absorption-radiator structure for solar thermal photovoltaic cell and preparation method thereof |
| CN114189198A (en) * | 2021-12-01 | 2022-03-15 | 上海交通大学 | Super-surface-selective radiator applied to thermophotovoltaic system and preparation method thereof |
| CN114497262A (en) * | 2022-03-02 | 2022-05-13 | 爱思菲尔光学科技(苏州)有限公司 | Narrow-band selective super-surface radiator and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101774536A (en) * | 2009-12-28 | 2010-07-14 | 厦门大学 | Preparation method of honeycomb nanoparticle array structure with two-dimensional hexagonal lattice arrangement |
| US20120312360A1 (en) * | 2011-05-18 | 2012-12-13 | Gennady Shvets | Thin-film integrated spectrally-selective plasmonic absorber/ emitter for solar thermophotovoltaic applications |
| WO2015035127A1 (en) * | 2013-09-06 | 2015-03-12 | Massachusetts Institute Of Technology | Metallic dielectric photonic crystals and methods of fabrication |
| WO2015038203A1 (en) * | 2013-09-11 | 2015-03-19 | Purdue Research Foundation | Refractory plasmonic metamaterial absorber and emitter for energy harvesting |
| CN104553221A (en) * | 2015-01-20 | 2015-04-29 | 浙江大学 | High-performance spectral selectivity wave-absorbing element and solar heat photovoltaic system |
| CN105027428A (en) * | 2013-03-08 | 2015-11-04 | 国立研究开发法人科学技术振兴机构 | Thermal radiation light source |
| JP2015230831A (en) * | 2014-06-05 | 2015-12-21 | 日本電気株式会社 | Light radiation structure |
-
2016
- 2016-05-16 CN CN201610326036.8A patent/CN105957915B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101774536A (en) * | 2009-12-28 | 2010-07-14 | 厦门大学 | Preparation method of honeycomb nanoparticle array structure with two-dimensional hexagonal lattice arrangement |
| US20120312360A1 (en) * | 2011-05-18 | 2012-12-13 | Gennady Shvets | Thin-film integrated spectrally-selective plasmonic absorber/ emitter for solar thermophotovoltaic applications |
| CN105027428A (en) * | 2013-03-08 | 2015-11-04 | 国立研究开发法人科学技术振兴机构 | Thermal radiation light source |
| WO2015035127A1 (en) * | 2013-09-06 | 2015-03-12 | Massachusetts Institute Of Technology | Metallic dielectric photonic crystals and methods of fabrication |
| WO2015038203A1 (en) * | 2013-09-11 | 2015-03-19 | Purdue Research Foundation | Refractory plasmonic metamaterial absorber and emitter for energy harvesting |
| JP2015230831A (en) * | 2014-06-05 | 2015-12-21 | 日本電気株式会社 | Light radiation structure |
| CN104553221A (en) * | 2015-01-20 | 2015-04-29 | 浙江大学 | High-performance spectral selectivity wave-absorbing element and solar heat photovoltaic system |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601830A (en) * | 2016-12-27 | 2017-04-26 | 张四清 | High-efficiency solar energy utilization system |
| CN107482994A (en) * | 2017-08-22 | 2017-12-15 | 郑义 | A kind of selective thermal transmitter for thermal photovoltaic system |
| CN108667394A (en) * | 2018-05-09 | 2018-10-16 | 万成龙 | A kind of Meta Materials of nanostructure |
| CN108667394B (en) * | 2018-05-09 | 2019-12-20 | 万成龙 | Metamaterial with nano structure |
| CN111123531A (en) * | 2019-12-29 | 2020-05-08 | 中国科学院西安光学精密机械研究所 | Antireflection micro-nano structure array based on space shaping |
| CN111123531B (en) * | 2019-12-29 | 2020-11-17 | 中国科学院西安光学精密机械研究所 | Antireflection micro-nano structure array based on space shaping |
| CN113035979A (en) * | 2021-03-09 | 2021-06-25 | 南京大学 | Absorption-radiator structure for solar thermal photovoltaic cell and preparation method thereof |
| CN113035979B (en) * | 2021-03-09 | 2022-08-19 | 南京大学 | Method for producing an absorber-emitter structure for solar thermal photovoltaic cells |
| CN114189198A (en) * | 2021-12-01 | 2022-03-15 | 上海交通大学 | Super-surface-selective radiator applied to thermophotovoltaic system and preparation method thereof |
| CN114189198B (en) * | 2021-12-01 | 2024-04-12 | 上海交通大学 | Super-surface selective radiator applied to thermophotovoltaic system and preparation method thereof |
| CN114497262A (en) * | 2022-03-02 | 2022-05-13 | 爱思菲尔光学科技(苏州)有限公司 | Narrow-band selective super-surface radiator and manufacturing method thereof |
| CN114497262B (en) * | 2022-03-02 | 2024-04-02 | 爱思菲尔光学科技(苏州)有限公司 | Narrow band selective subsurface radiator and method of making same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105957915B (en) | 2018-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105957915A (en) | High-temperature resistant solar spectrum selective absorption and radiation structure | |
| Branham et al. | 15.7% efficient 10-μm-thick crystalline silicon solar cells using periodic nanostructures | |
| CN106452287B (en) | Micro-nano light trapping honeycomb energy storage combined generating device | |
| US10043932B2 (en) | Internally-heated thermal and externally-cool photovoltaic cascade solar energy system for full solar spectrum utilization | |
| KR101220304B1 (en) | Up conversion oxide fluorescent composition for solar cell and method of fabrication of high efficiency solar cell using thereof | |
| WO2007133344A2 (en) | Wavelength-converting phosphors for enhancing the efficiency of a photovoltaic device | |
| ES2641665T3 (en) | Tm2 + luminescent materials for solar radiation conversion devices | |
| JP2015512147A (en) | Luminescence power generation window for plant growth | |
| CN105489691A (en) | Solar cell module with high conversion efficiency | |
| TWI452118B (en) | A solar cell with a fluorescent powder and a method for making the same | |
| CN107482994A (en) | A kind of selective thermal transmitter for thermal photovoltaic system | |
| JP2004297025A (en) | High-efficiency solar cell | |
| CN104553221B (en) | High-performance optical spectral selectivity inhales ripple element and solar thermal photovoltaic system | |
| CN101399292B (en) | High temperature heat radiation integrated device used for photovoltaic electricity generation | |
| CN102544177A (en) | Plasma strengthening upconverter for solar cells and preparation method thereof | |
| TWI381141B (en) | Solar energy system | |
| CN205407659U (en) | Solar energy distribution formula cogeneration of heat and power energy system | |
| Van Sark et al. | Luminescent solar concentrators: The route to 10% efficiency | |
| CN107171633A (en) | A kind of solar energy divides combined generating device | |
| CN107171632A (en) | Device of solar generating based on translucent perovskite battery, thermo-electric device | |
| US20170338766A1 (en) | Hybrid flow solar thermal collector | |
| CN105187002B (en) | Wide spectrum electromagnetism solar cell | |
| Zhang et al. | Solar cell performance improvement via photoluminescence conversion of Si nanoparticles | |
| Benfadel et al. | Properties of SiC-based luminescent composite thin film as light-harvesting material | |
| van Sark | Will luminescent solar concentrators surpass the 10% device efficiency limit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180706 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |