CN105932153B - A kind of magnetism unusual hall transistors of room temperature lower piezoelectric regulation and control - Google Patents
A kind of magnetism unusual hall transistors of room temperature lower piezoelectric regulation and control Download PDFInfo
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- CN105932153B CN105932153B CN201610412360.1A CN201610412360A CN105932153B CN 105932153 B CN105932153 B CN 105932153B CN 201610412360 A CN201610412360 A CN 201610412360A CN 105932153 B CN105932153 B CN 105932153B
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Abstract
The present invention proposes a kind of unusual hall transistors of magnetism of room temperature lower piezoelectric regulation and control and its logical device of composition.Transistor has composite multi-layer membrane structure：Piezoelectric layer/thin magnetic film/protective layer or conductive layer/piezoelectric layer/thin magnetic film/protective layer.The present invention generates deformation by applying voltage to piezoelectric membrane both ends, which is transferred in the thin magnetic film on upper strata.The present invention realizes magnetized overturning under zero magnetic field of room temperature using piezoelectricity.The present invention has the advantages that low-power consumption, response time are short, integrated level is high and works at room temperature.
Description
Technical field
The invention belongs to information technology and field of microelectronics, the new logic function element being related in information technology field,
More particularly to extraordinary Hall effect value changes caused by using piezoelectric effect regulating and controlling ferromagnetic material magnetization reversal, and based on this
The unusual hall transistors of the room temperature piezoelectricity regulation and control of principle invention and the unusual hall transistors based on the regulation and control of room temperature piezoelectricity can
Realize logic function.
Background technology
Semiconductor technology is the foundation stone of modern information technology development, and vital work is played to the progress of human society
With.With being constantly progressive for micro fabrication, die size constantly reduces, and the storage density and processing speed of information are pressed
It advances, doubles according to Moore's Law within about 18 months, the semiconductor chip process of 14 nano-scales is thrown at the beginning of 2015
Enter into industrial production.But with further improving for integrated level, device size becomes smaller, will increasingly approach classical physics
The limit, quantum effect becomes more and more important, while quantum tunneling can lead to the increase of leakage current, and the loss of device also can be big
Amplitude increases, these can all restrict the further development of microelectric technique.
The processing, storage and transmission of information are realized it is possible that breaking through the barrier of current information technology using the spin of electronics
Hinder, spintronics devices have the advantages that speed is fast, non-volatile, low energy consumption.The basic unit of current CMOS integrated circuits
It is field-effect transistor, mainly the carrier concentration in semiconductor channel is controlled to realize "ON" and "Off" using gate electric field
State, in this, as 1 in information processing and 0 state.Since magnetic material has magnetic anisotropy, the different direction of magnetizations
Can be as the different information in information processing or storage, and extraordinary Hall effect is to detect the spy of magnetic material magnetic characteristic
Needle.According to the difference of selection magnetic material, with the main packet of unusual Hall variation of the magnetization reversal of piezoelectricity control ferromagnetic material
Include three types：1) for perpendicular magnetic anisotropic material, when magnetic moment is overturn from top to bottom, the value of extraordinary Hall effect
It can be from just (negative) variation to bear (just)；2) piezoelectricity regulates and controls and is turned over so that magnetizing and becoming some crystal orientation magnetization in face from vertical direction
Turn, so as to make unusual Hall voltage that corresponding variation occur；3) cause the material of magnetic anisotropy in face using piezoelectric effect
90 degree of overturning occurs for magnetic moment, and the design direction of magnetization is θ relative to the current direction of device, and in face extraordinary Hall effect with
The direction of magnetization changes relative to current direction into sin2 θ, and maximum variation is to become -1 from 1, be that is to say so that direction of magnetization phase
The variation of current direction is spent for 45 (- 135) to -45 (135).According to direction of magnetization variation corresponding to device current direction
Variation, the corresponding obtained unusual Hall voltage that measures can be changed from positive to negative or be become just from negative, and one kind can be with analogy here
In p-type field-effect transistor, another kind is analogous to N-shaped field-effect transistor.Based on both piezoelectricity extraordinary Hall effect crystal
Pipe, designs required logic function circuit, is applied to information technology field.
Invention content
(1) technical problems to be solved
The problem of being the requirement that existing field-effect transistor can not meet higher integrated level to be solved by this invention.
(2) technical solution
The technical solution adopted in the present invention is a kind of spintronics devices designed for solving more high integration.
Hall voltage is mainly changed, and Hall voltage is transmitted to next stage by the spin magnetic moment direction in voltage control device
In device in continue to play regulating and controlling effect, and so on, to realize the response of signal and processing function, realize that energy consumption is lower,
The higher logic function circuit of integrated level.
The unusual hall transistors of magnetism of the pressure controlling at room temperature of the present invention, have composite multi-layer membrane structure, this is compound
Multi-layer film structure is：Piezoelectric layer/thin magnetic film/protective layer or conductive layer/piezoelectric layer/thin magnetic film/protective layer, the pressure
Electric layer can be by regulating and controlling voltage, so as to adjust the characteristic of the thin magnetic film.
(3) advantageous effect
This magnetic logic devices is based on electric field controls, has that low-power consumption, the response time is short, integrated level is high and work at room temperature
The advantages of making；It can complete the nondisjunction logical operation function of " non-" logic function of single input, dual input or multi input.
Description of the drawings
Fig. 1 is the three dimensional structure diagram of magnetic planar Hall transistor regulated and controled based on piezoelectricity；
Fig. 2 is the unusual hall transistors regulated and controled based on piezoelectricity Magnetic moment reversal in perpendicular magnetic anisotropic thin magnetic film
Schematic diagram；
Fig. 3 is that the unusual hall transistors regulated and controled based on piezoelectricity Magnetic moment reversal in perpendicular magnetic anisotropic thin magnetic film is arrived
The schematic diagram of crystal orientation in face；
Fig. 4 is the unusual hall transistors regulated and controled based on piezoelectricity Magnetic moment reversal in magnetic anisotropy thin magnetic film in face
Schematic diagram；
Fig. 5 is the circuit structure diagram based on the unusual hall transistors that piezoelectricity regulates and controls when realizing inverter logic；
Fig. 6 is the circuit structure diagram based on the unusual hall transistors that piezoelectricity regulates and controls when realizing inverter logic；
Fig. 7 is the circuit structure diagram based on the unusual hall transistors that piezoelectricity regulates and controls when realizing nondisjunction gate logic；
Fig. 8 is the circuit structure diagram based on the unusual hall transistors that piezoelectricity regulates and controls when realizing nondisjunction gate logic；
Fig. 9 is to realize the circuit structure diagram of nondisjunction gate logic constantly based on the unusual hall transistors that piezoelectricity regulates and controls；
Figure 10 is the circuit structure diagram based on the unusual hall transistors that piezoelectricity regulates and controls when realizing nondisjunction gate logic.
Specific embodiment
The magnetization reversal of zero magnetic field magnetic material of room temperature is realized in present invention proposition using piezoelectric effect, thus along with
The variation of the unusual Hall voltage of magnetic material can prepare room using the variation of the extraordinary Hall effect with magnetization reversal
The unusual hall transistors of temperature and pressure electricity.
Present invention firstly provides the growth ferromagnetic composite multi-layer membrane structure of piezoelectricity, the basic structures of the ferromagnetic composite multilayer membrane of piezoelectricity
To grow certain thickness piezoelectric material film (such as BTO, PZT or PMNPT) etc. on substrate, then grown above
One layer of ferromagnetic thin film finally grows layer protective layer protection ferromagnetic thin film.It is it is also contemplated that directly raw in growth course
Then the conducting layer electrode of long piezoelectric material film grows an insulating layer conductive layer and magnetic membrane material.I.e. this is compound more
Film structure is：Piezoelectric layer/thin magnetic film/protective layer or conductive layer/piezoelectric layer/thin magnetic film/protective layer, the piezoelectricity
Layer can by regulating and controlling voltage, so as to so adjust the characteristic of the thin magnetic film.
Thin magnetic film is selected from permalloy, semimetal, ferromagnetic semiconductor and magnetic metal material.
Based on above structure, the present invention proposes, based on the unusual hall transistors of piezoelectricity regulation and control, the device junction of the transistor
Structure is designed as piezoelectric material being divided into each different fritter or for multiple cell blocks, and each cell block corresponds to independent
Magnetic film structure, and each cell block can be independently applied voltage.And preferably, each cell block of the piezoelectric layer
Corresponding independent magnetic film structure is cross structure, i.e., there are one independent cross structure micro-nano is ferromagnetic thin on each fritter
Membrane module controls single piezoelectricity fritter to generate deformation, so as to fulfill each ferromagnetic micro-nano is individually controlled using voltage
Device, by the use of extraordinary Hall effect as output, each micro-nano unit is a piezoelectricity abnormality hall transistors at this time, is passed through
Various logic function can be realized by designing multiple unusual hall transistors.
Independent cross structure micro-nano ferromagnetic thin film device is mainly according to designed by the test of Hall voltage in the present invention.Ten
The device of word structure can be prepared by ripe technique.First we on the piezoelectricity substrate grown,
A layer thickness is grown for several nanometers of magnetism to more than ten nano thickness by growing methods such as molecular beam epitaxy or magnetron sputterings
The oxidation of thin-film material, in order to prevent magnetic membrane material, on the thin magnetic film grown, then by molecular beam epitaxy or
The growing methods such as magnetron sputtering grow the protective layer of several nano thickness.On the film grown, photoetching or electricity can be utilized
The technique of beamlet etching prepares the device architecture of demand.In the present invention, the method for photoetching or electron beam lithography mainly includes
Pre-treatment, gluing, baking, alignment exposure, postexposure bake, development, ion beam etching and the techniques such as remove photoresist are prepared.Pass through
A variety of such preparation processes are repeated, the required device of design is prepared, can be prepared finally by inspection and encapsulation
Go out required function logic device.
Piezoelectricity abnormality hall transistors in the present invention, can prepare complete when using externally-applied magnetic field initializing so that
So the direction of magnetization of device is directed toward same easy magnetizing axis or the raw oersted field of electricity consumption miscarriage the magnetization of device to be caused to refer to
To same direction.
The present invention preferably makes bottom gate there are one the unusual hall transistors tools regulated and controled based on piezoelectricity, in the substrate of needs
The bottom gate layer of one layer of metal material is grown, then the depositing piezoelectric material layer on bottom gate layer.Bottom gate can have multiple functions：
1) all units of initialization transistor, by being passed through electric current in bottom gate, so as to generate a stable magnetic field, the magnetic field energy
The ferromagnetic layer direction of magnetization is enough made to be directed toward same direction.So as to which each device in ferromagnetic layer be made to have original state, i.e., partly lead
P-type field-effect transistor and N-shaped field-effect transistor in body device, in this initial situation, device made of ferromagnetic material
Part will form logic circuit by the realization of different circuit design and extraordinary Hall effect；2) piezoelectricity is regulated and controled by bottom gate
The deformation of material, piezoelectric material generate deformation, and deformation is efficiently transferred to ferromagnetic material under the voltage effect of bottom gate
In, so as to realize the magnetization characteristic of the thin magnetic film on piezoelectricity regulation and control upper strata.
The emergent property regulation and control thin magnetic film mainly generated in the present invention using piezoelectric material, and the characteristic of piezoelectric material,
Play the role of in this design vital.By applying voltage at the both ends of piezoelectric material, piezoelectric material can be shown
Compression or the state upheld, are showed in the form of the deformation of material.The deformation is effectively transmitted to be grown in piezoelectric material
In ferromagnetic material on layer, ferromagnetic material is caused to generate deformation, is overturn so as to cause the direction of magnetization of device so that device
The unusual Hall voltage of part changes.Both states can realize 0 and 1 logic function, which mainly passes through measuring appliance
The Hall resistance at part both ends realizes the function of logic unit.
Piezoelectricity abnormality hall transistors function element needs thin using the ferromagnetism with extraordinary Hall effect in the present invention
Film grows ferrimagnet on the piezoelectric materials, and then by circuit design and preparation process, institute is prepared in ferromagnetic material
The various devices and connection circuit needed, to realize required various logic function.Device prepared by ferromagnetic material has
In the course of work of device, device class is realized using the direction of magnetization different in ferromagnetic material respectively for extraordinary Hall effect
Than in the function of p-type field-effect transistor and N-shaped field-effect transistor.Regulate and control the magnetization side of ferromagnetic material by piezoelectric effect
To overturning, so as to realize the transformation of the not homomorphism of device, achieve the purpose that regulating and controlling voltage logic function devices.Magnetosphere
The selection of material is also extremely important, and the magnetic anisotropy for needing to select such material is more sensitive for deformation, institute in the design
Using the magnetic material with perpendicular magnetic anisotropy or intra-face anisotropy, such material has under deformation effect,
Direction of magnetization overturning 90.The phenomenon that.Such magnetic material is grown on the piezoelectric material with deformation behavior, passes through piezoresistive material
The deformation of material indirectly changes the deformation of magnetic material, so as to which the direction of magnetization in magnetic material be controlled to overturn.Work as magnetic material
The direction of magnetization overturn after, the angle of the direction of magnetization and electric current is changed, due to extraordinary Hall effect have the π periods
Property, so as to measure the situation of change by the extraordinary Hall effect caused by variable angle.By different devices
By designing and connecting, it is possible to realize a variety of different logic functions.
Thin magnetic film upper strata in the present invention needs to prevent from aoxidizing, so protective layer is grown in above ferromagnetic material, tool
Play the role of protecting ferromagnetic material.During device is prepared, in order to protect ferromagnetic material is as small as possible to be affected and increase
Add its service life, so extremely important in ferromagnetic material upper strata growth layer protective layer.
The structure design of the present invention is extremely important.The magnetic of each ferromagnetic wiener device can individually be regulated and controled by piezoelectricity
Property, it that is to say its unusual Hall voltage, single unusual hall transistors be subjected to large-scale integrated, be prepared into more optimal collection
Into circuit.It is similar with semiconductor integrated circuit step is prepared that logic function circuit is made with this configuration, generally requires five ranks
Section：Prepared by design of circuit system, layout design and optimization, IC chip, integrated antenna package and circuit finished product test point
Analysis.By the integrated circuit that five stages prepare, there is small, light weight, reliability is high, long lifespan, fast response time
The features such as.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, based on piezoelectricity regulation and control unusual hall transistors based on, realize part logic function, mainly patrolled with " non-", nondisjunction
For specific steps during volume operation, the working method that the present invention will be described in detail, and then to realize different logic functions.
Arrange in following content, work as electrode B11、B12、B13、……B1NAnd B11、B21、B31、……BN1Input point
When level signal is U, the input signal of system logic is " 1 "；It is low level when electrode disconnects input signal or incoming level
When, system logic input signal is " 0 "；To piezoelectric material in voltage-controlled paired electrode, one of electrode is as ground connection
End；During logical operation, constant or pulse current I0 is passed through in ferromagnetic micro-nano device；When Hall voltage is in high-voltage state
When, system logic output is " 1 "；When Hall voltage is in low-pressure state, the logic output of system is " 0 "；The logic function
Device at work, by piezoelectricity respectively operates single ferromagnetic micro-nano device, can cause ferromagnetic micro-nano device
Magnetic moment overturn, according to selection magnetic material difference, piezoelectricity regulation and control there are three types of overturn mechanism；Magnetic moment is used in the present invention
Overturn three kinds of flip-flop mechanisms to represent magnetic moment；During mainly explanation designs in the patent for some unit, NOT sum is realized
Nondisjunction logic function.
Fig. 1 is the three dimensional structure diagram of magnetic planar Hall transistor regulated and controled based on piezoelectricity.Shown in FIG. 1 is each
The device architecture of a unit.As shown in the figure, first growth piezoelectric material film (can directly grow its conductive electrode on substrate
Layer), which includes and is not limited to the materials such as BTO, PZT or PMN-PT, and then one layer of growth is ferromagnetic above it again
Material film, which includes and is not limited to permalloy, semimetal, ferromagnetic semiconductor and magnetic metal material.In piezoelectricity
Film both sides are electrode, and input terminal of the input voltage as logical signal, it can regulate and control the magnetization reversal of ferromagnetic material, magnetic
Output terminal of the unusual Hall voltage measured in property material as logical signal.
Fig. 2~4 are the principle of adjustment and control of unusual hall transistors device regulated and controled based on piezoelectricity.
Fig. 2 is the unusual hall transistors regulated and controled based on piezoelectricity Magnetic moment reversal in perpendicular magnetic anisotropic thin magnetic film
Schematic diagram.Arrow in Fig. 2 represents the magnetic moment direction of ferromagnetic thin film, and magnetic moment overturns 180 ° under stress regulation and control effect.
Fig. 3 is that the unusual hall transistors regulated and controled based on piezoelectricity Magnetic moment reversal in perpendicular magnetic anisotropic thin magnetic film is arrived
The schematic diagram of crystal orientation in face.Arrow in figure represents the magnetic moment direction of ferromagnetic thin film, and magnetic moment is overturn under regulating and controlling voltage effect
90 °, magnetic moment direction is by some crystal orientation in steering surface outside face.
Fig. 4 is the unusual hall transistors regulated and controled based on piezoelectricity Magnetic moment reversal in magnetic anisotropy thin magnetic film in face
Schematic diagram.Arrow in figure represents the magnetic moment direction of ferromagnetic thin film, and magnetic moment overturns 90 ° under regulating and controlling voltage effect.
Fig. 5~10 are the logic function that the unusual hall transistors device regulated and controled based on piezoelectricity is realized.
Fig. 5 is based on the unusual hall transistors that piezoelectricity regulates and controls when realizing inverter logic, and input terminal is initial 0 shape
State, the output hall signal of measurement is logical signal 1.Fig. 6 is to realize " non-" based on the unusual hall transistors that piezoelectricity regulates and controls
During gate logic, input terminal is 1 state under regulating and controlling voltage, and the output Hall voltage signal of measurement is logical signal 0.
Realize inverter logical operation：
Step S1, based on initialized logical device, as shown in figure 5, disconnecting the switch of the electric signal of input terminal
K11, voltage difference of the voltage between 0, and the electrode of ground connection at electrode B 11 is 0, and piezoelectric material does not deform upon, from
And the magnetic moment direction in topmost layer of magnetic material is in original state and the angle of probe current remains unchanged, the Hall of output terminal
Voltage signal remains unchanged, and input terminal is logical signal 0, and output terminal is logical signal 1.
Step S2, logic state is realized realizes 1 logical signal under regulating and controlling effect.As shown in fig. 6, it is closed input terminal electric signal
Switch K11, voltage difference of the voltage between U, and the electrode of ground connection at electrode B 11 is U, and piezoelectric material is acted in voltage
Under deform upon, the magnetic moment so as to cause the magnetic material on upper strata is overturn, and probe current direction remains unchanged, so magnetic
The angle of square and current direction is changed, and the Hall voltage signal of output terminal is also changed, as logical signal
Output signal 0.
Its input and output logical relation such as following table.
It can be seen that
Fig. 7 is the input terminal K based on the unusual hall transistors that piezoelectricity regulates and controls when realizing nondisjunction gate logic11And K21
State in disconnection, electrode B11And B21All in 0 voltage status, logic input signal is [0,0], the output Hall of measurement
Voltage signal is logical signal 1.
Fig. 8 is the input terminal K based on the unusual hall transistors that piezoelectricity regulates and controls when realizing nondisjunction gate logic11In closing
Conjunction state, K21State in disconnection, electrode B11Place's voltage is U, and B21In 0 voltage status, logic input signal for [1,
0], the output Hall voltage signal of measurement is logical signal 0.
Fig. 9 is the input terminal K based on the unusual hall transistors that piezoelectricity regulates and controls when realizing nondisjunction gate logic11In disconnected
Open state, K21State in closure, electrode B11It is 0 to locate voltage, and B21In U voltage status, logic input signal for [0,
1], the output Hall voltage signal of measurement is logical signal 0.
Figure 10 is the input terminal K based on the unusual hall transistors that piezoelectricity regulates and controls when realizing nondisjunction gate logic11With
K21State in closure, electrode B11And B21All in U voltage status, logic input signal is [1,1], and the output of measurement is suddenly
Your voltage signal is logical signal 0.
Realize NOR gate logical operation：
Step T1, based on initialized logical device.As shown in fig. 7, disconnect the switch K of the electric signal of input terminal11
And K21, electrode B11And B21Voltage difference of the voltage at place between 0, and the electrode of ground connection is 0, and shape does not occur for piezoelectric material
Become, so that the magnetic moment direction in two device topmost layers of magnetic material is in original state and the angle of probe current remains unchanged,
The Hall voltage signal of output terminal remains unchanged, and input terminal is logical signal [0,0], and output terminal is logical signal " 1 ".
Step T2, as shown in figure 8, being closed the switch K of the electric signal of input terminal11, disconnect input end switch K21, electrode B11
The voltage at place is U, and B21The voltage at place is 0, and the voltage difference between two and the electrode of ground connection is respectively U and 0, B11Place
Piezoelectric material deforms upon, so as to which the magnetic moment direction in device topmost layer of magnetic material is adjusted the angle of overturning and probe current
It changes, the output voltage at Hall both ends is caused to change, and B21The piezoelectric material at place does not have deformation, magnetic moment direction and detection electricity
The angle of stream remains unchanged, and the Hall voltage signal of output terminal remains unchanged, and input terminal is logical signal [1,0], at this point, output
It holds as logical signal " 0 ".
Step T3, as shown in figure 9, disconnecting the switch K of the electric signal of input terminal11, it is closed input end switch K21, electrode B11
The voltage at place is 0, and B21The voltage at place is U, and the voltage difference between two and the electrode that is grounded is respectively 0 and U, B11Place
Piezoelectric material will not deform upon, and the angle of magnetic moment direction and probe current remains unchanged, and the Hall voltage signal of output terminal is protected
Hold constant, and B21The piezoelectric material at place deforms upon, so as to which the magnetic moment direction in this device topmost layer of magnetic material is adjusted overturning,
Change with the angle of probe current, the output voltage at Hall both ends caused to change, at this point, input terminal for logical signal [0,
1], output terminal is logical signal " 0 ".
Step T4 as shown in Figure 10, is closed the switch K of the electric signal of input terminal11And K21, electrode B11And B21The voltage at place
Voltage difference between U, and the electrode of ground connection is U, and piezoelectric material deforms upon under voltage effect, so as to two micro-nano devices
Magnetic moment direction in part topmost layer of magnetic material is all adjusted overturning and the angle of probe current is all changed, and leads to Hall
The output voltage at both ends changes, and the Hall voltage signal of output terminal is adjusted, at this point, input terminal is logical signal [1,1], output
It holds as logical signal " 0 ".
During logic judgment, step T1~T4 can be repeated to realize logic function.
The logical relation of its input and output such as following table：
It can be seen that Y=A+B.
Particular embodiments described above has carried out the purpose of the present invention, technical solution and advantageous effect further in detail
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the protection of the present invention
Within the scope of.
Claims (6)
1. a kind of unusual hall transistors of magnetism of room temperature lower piezoelectric regulation and control, have composite multi-layer membrane structure, the composite multilayer membrane
Structure is：Piezoelectric layer/thin magnetic film/protective layer or conductive layer/piezoelectric layer/thin magnetic film/protective layer, the piezoelectric layer energy
It is enough by regulating and controlling voltage, so as to adjust the direction of magnetization of the thin magnetic film.
2. magnetic unusual hall transistors according to claim 1, which is characterized in that the material of the piezoelectric layer is selected from
BTO、PZT、PMN-PT。
3. magnetic unusual hall transistors according to claim 1, which is characterized in that the thin magnetic film is closed selected from perm
Gold, semimetal, ferromagnetic semiconductor and magnetic metal material.
4. magnetic unusual hall transistors according to claim 1, which is characterized in that the piezoelectric layer is divided into multiple lists
First block, each cell block corresponds to independent magnetic film structure, and each cell block can be independently applied voltage.
5. magnetic unusual hall transistors according to claim 4, which is characterized in that each cell block of the piezoelectric layer
Corresponding independent magnetic film structure is cross structure.
6. a kind of logical device, which is characterized in that including pressure controlling at room temperature such as according to any one of claims 1 to 5
The unusual hall transistors of magnetism.
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| CN106684241B (en) * | 2016-12-23 | 2019-12-10 | 青岛大学 | Electric field regulation and control magnetic device and method based on oxygen ion movement |
| CN111830295B (en) * | 2019-04-18 | 2023-04-21 | 成都辰显光电有限公司 | Device for testing electrical performance of micro-component |
| CN110726959B (en) * | 2019-09-11 | 2021-11-02 | 杭州电子科技大学 | Magnetic field sensing device with adjustable sensitivity based on abnormal Hall effect |
| CN113088637B (en) * | 2021-03-26 | 2022-08-02 | 深圳技术大学 | Deep pulse current annealing, signal conditioning and collecting method and device for permalloy |
| CN113224232B (en) * | 2021-04-26 | 2024-02-02 | 中国科学院微电子研究所 | SOT-MRAM based on bottom electrode vertical voltage control and manufacturing and writing methods thereof |
| CN116864277B (en) * | 2023-07-26 | 2024-03-15 | 兆和能源(威海)有限公司 | Electricity-saving device based on electromagnetic balance control |
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