CN105932142A - White LED (Light-Emitting Diode) nano-phosphor powder - Google Patents
White LED (Light-Emitting Diode) nano-phosphor powder Download PDFInfo
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- CN105932142A CN105932142A CN201610408953.0A CN201610408953A CN105932142A CN 105932142 A CN105932142 A CN 105932142A CN 201610408953 A CN201610408953 A CN 201610408953A CN 105932142 A CN105932142 A CN 105932142A
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- nano
- phosphor
- silicon nitride
- white light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Abstract
This invention discloses a white LED nano-phosphor powder. The nano-phosphor powder comprises nano-amorphous silicon nitride powder body and phosphor powder; the weight of the nano-amorphous silicon nitride powder body is 25 to 35 percentage of the weight of the phosphor powder. The nano-phosphor powder is prepared by the following steps: stirring and prilling the nano-amorphous silicon nitride powder body and the phosphor powder; after obtaining compound phosphor powder, preparing phosphor glue; covering the phosphor glue on a LED chip; and adhering the compound phosphor power on the surface of the LED chip by the gravity. Thus, the white LED nano-phosphor powder has high refractive index and high light transmittance, can protect the LED chip and increase the luminous flux of the LED, has small viscosity, is easy to defoam, is suitable for filling and compression molding, and makes the LED get better durability and reliability.
Description
Technical field
The present invention relates to flip LED encapsulation technology field, particularly a kind of white light LEDs nano-phosphor.
Background technology
Light emitting diode is the illumination new light sources of 21 century, and it is high that it has light efficiency, and operating voltage is low, and power consumption is little, and volume is little
Advantage, can planar package, firm in structure and the life-span is the longest.The harmful substances such as light source itself is the most mercurous, lead, without infrared and ultraviolet
Pollute, pollution to external world will not be produced in producing and using.Therefore, from saving electric energy, the angle of reduction greenhouse gas emission
Degree, or from reducing the angle of environmental pollution, development LRD effect novel illumination light source replaces traditional lighting apparatus will be the general trend of events
Become.But existing LED encapsulation fluorescent material LED goes out the lack of homogeneity of light, and have that emission spectrum is discontinuous, colour rendering
The problems such as low, light efficiency is the highest, have had a strong impact on LED and have entered the speed of lighting field.
Summary of the invention
The technical problem to be solved in the present invention is for the deficiencies in the prior art, propose one have high index of refraction and high transmission rate,
LED chip can be protected to increase the luminous flux of LED, make LED have the white light LEDs nanometer of preferable durability and reliability glimmering
Light powder.
The technical problem to be solved in the present invention is achieved through the following technical solutions.The present invention is a kind of white light LEDs nano fluorescent
Powder, is characterized in: including nano amorphous beta-silicon nitride powder and fluorescent material, described nano amorphous beta-silicon nitride powder is at the weight of fluorescent material
Amount percentage is 25-35%, and its painting method is, nano amorphous beta-silicon nitride powder and fluorescent material are first put into the stirring of high speed bruisher
Granulation, obtains composite phosphor, is being added on rubber mixing machine to carry out mixing by weight 1: 3 by composite phosphor and heat-conducting glue, mixed
Refining temperature is 110-120 DEG C, and mixing time is 30-45 minute, and mixing uniform final vacuum, to the state of invisible bubble, obtains
To fluorescent glue, after LED chip being fixed on pedestal, in LED support, envelope fills fluorescent glue, makes fluorescent glue cover LED core
Sheet, places horizontal plane and stands 40-55 minute, make composite phosphor be attached to LED chip surface by gravity.
Preferably, described nano amorphous beta-silicon nitride powder is 30-35% at the percentage by weight of fluorescent material.
Preferably, described nano amorphous beta-silicon nitride powder is 32% at the percentage by weight of fluorescent material.
Preferably, described melting temperature is 115 DEG C, and mixing time is 40 minutes.
Preferably, described placement horizontal plane stands 50 minutes.
Compared with prior art, the present invention is by nano amorphous beta-silicon nitride powder and fluorescent material stirring-granulating, after obtaining composite phosphor,
Make fluorescent glue, fluorescent glue covered in LED chip, makes composite phosphor be attached to LED chip surface by gravity,
Can reach high index of refraction and high transmission rate, can play protection LED chip increases the luminous flux of LED, and viscosity is little, easy deaeration,
It is suitable for embedding and compression molding, makes LED have preferable durability and reliability.
Detailed description of the invention
Further describe the concrete technical scheme of the present invention, in order to those skilled in the art is further understood that the present invention, and
Do not constitute the restriction of its power.
Embodiment 1, a kind of white light LEDs nano-phosphor, including nano amorphous beta-silicon nitride powder and fluorescent material, described nanometer is non-
Polycrystalline silicon nitride powder is 25-35% at the percentage by weight of fluorescent material, and its painting method is, first by nano amorphous beta-silicon nitride powder and
High speed bruisher stirring-granulating put into by fluorescent material, obtains composite phosphor, by composite phosphor and heat-conducting glue by weight 1: 3
Being added on rubber mixing machine to carry out mixing, melting temperature is 110-120 DEG C, and mixing time is 30-45 minute, and mixing uniform final vacuum is extremely
Till the state of invisible bubble, obtaining fluorescent glue, after LED chip being fixed on pedestal, in LED support, envelope fills glimmering
Optical cement, makes fluorescent glue cover LED chip, places horizontal plane and stands 40-55 minute, makes composite phosphor be attached to by gravity
LED chip surface.Described nano amorphous beta-silicon nitride powder can also be replaced by semiconductor nano, and semiconductor nano is one
Class advanced luminescent material, have solution chemical method prepare, easily dispersion, emission spectrum is adjustable, luminous efficiency high, can
Promote the performance of existing white light LEDs.CuInS2 is nanocrystalline is that a class does not contains rare earth and the advanced luminescent material of heavy metal element,
There is the features such as size little, Wavelength tunable, luminescent spectrum width, self-priming zoom in, low cost, have bright in white light LEDs is applied
Aobvious advantage.
Embodiment 2, in a kind of white light LEDs nano-phosphor described in embodiment 1: described nano amorphous beta-silicon nitride powder is glimmering
The percentage by weight of light powder is 30-35%.
Embodiment 3, in a kind of white light LEDs nano-phosphor described in embodiment 1 or 2: described nano amorphous beta-silicon nitride powder
Percentage by weight at fluorescent material is 30%.
Embodiment 4, in a kind of white light LEDs nano-phosphor described in embodiment 1 or 2 or 3: described nano amorphous silicon nitride
Powder is 35% at the percentage by weight of fluorescent material.
Embodiment 5, in a kind of white light LEDs nano-phosphor described in any one of embodiment 1-4: described nano amorphous silicon nitride
Powder is 32% at the percentage by weight of fluorescent material.
Embodiment 6, in a kind of white light LEDs nano-phosphor described in any one of embodiment 1-5: described melting temperature is 115 DEG C,
Mixing time is 40 minutes.
Embodiment 7, in a kind of white light LEDs nano-phosphor described in any one of embodiment 1-6: described placement horizontal plane stands
50 minutes.
Claims (5)
1. a white light LEDs nano-phosphor, it is characterised in that: include nano amorphous beta-silicon nitride powder and fluorescent material,
Described nano amorphous beta-silicon nitride powder is 25-35% at the percentage by weight of fluorescent material, and its painting method is, first that nanometer is non-
High speed bruisher stirring-granulating put into by polycrystalline silicon nitride powder and fluorescent material, obtains composite phosphor, by composite phosphor with
Heat-conducting glue is added on rubber mixing machine to carry out mixing by weight 1: 3, and melting temperature is 110-120 DEG C, and mixing time is 30-45
Minute, mixing uniform final vacuum, to the state of invisible bubble, obtains fluorescent glue, LED chip is fixed on pedestal
After on, in LED support, envelope fills fluorescent glue, makes fluorescent glue cover LED chip, places horizontal plane and stands 40-55 minute,
Composite phosphor is made to be attached to LED chip surface by gravity.
White light LEDs nano-phosphor the most according to claim 1, it is characterised in that: described nano amorphous nitridation
Silicon powder is 30-35% at the percentage by weight of fluorescent material.
White light LEDs nano-phosphor the most according to claim 1, it is characterised in that: described nano amorphous nitridation
Silicon powder is 32% at the percentage by weight of fluorescent material.
White light LEDs nano-phosphor the most according to claim 1, it is characterised in that: described melting temperature is
115 DEG C, mixing time is 40 minutes.
White light LEDs nano-phosphor the most according to claim 1, it is characterised in that: described placement horizontal plane is quiet
Put 50 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610408953.0A CN105932142A (en) | 2016-06-02 | 2016-06-02 | White LED (Light-Emitting Diode) nano-phosphor powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610408953.0A CN105932142A (en) | 2016-06-02 | 2016-06-02 | White LED (Light-Emitting Diode) nano-phosphor powder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105932142A true CN105932142A (en) | 2016-09-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610408953.0A Pending CN105932142A (en) | 2016-06-02 | 2016-06-02 | White LED (Light-Emitting Diode) nano-phosphor powder |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107384383A (en) * | 2017-08-18 | 2017-11-24 | 苏州轻光材料科技有限公司 | A kind of compound fluorescent material of UV excited white lights LED |
| CN111471458A (en) * | 2020-04-23 | 2020-07-31 | 深圳市金新像科技有限公司 | Composite fluorescent powder for exciting white light L ED and preparation and use method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656290A (en) * | 2009-09-29 | 2010-02-24 | 四川九洲光电科技有限公司 | Process for encapsulating light-emitting diode |
| CN101967374A (en) * | 2010-08-13 | 2011-02-09 | 南京工业大学 | Alkaline-earth metal silicon oxynitride luminescence material, preparation method and application thereof |
| CN102140339A (en) * | 2011-01-18 | 2011-08-03 | 济南大学 | Silicon-based nitrogen oxide fluorescent powder for white LED and preparation method thereof |
| CN104576888A (en) * | 2015-01-15 | 2015-04-29 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | LED package component, substrate and wafer level packaging method thereof |
-
2016
- 2016-06-02 CN CN201610408953.0A patent/CN105932142A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656290A (en) * | 2009-09-29 | 2010-02-24 | 四川九洲光电科技有限公司 | Process for encapsulating light-emitting diode |
| CN101967374A (en) * | 2010-08-13 | 2011-02-09 | 南京工业大学 | Alkaline-earth metal silicon oxynitride luminescence material, preparation method and application thereof |
| CN102140339A (en) * | 2011-01-18 | 2011-08-03 | 济南大学 | Silicon-based nitrogen oxide fluorescent powder for white LED and preparation method thereof |
| CN104576888A (en) * | 2015-01-15 | 2015-04-29 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | LED package component, substrate and wafer level packaging method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107384383A (en) * | 2017-08-18 | 2017-11-24 | 苏州轻光材料科技有限公司 | A kind of compound fluorescent material of UV excited white lights LED |
| CN111471458A (en) * | 2020-04-23 | 2020-07-31 | 深圳市金新像科技有限公司 | Composite fluorescent powder for exciting white light L ED and preparation and use method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20160907 |