CN105932095B - The method of metal residual after elimination infrared focal plane array seeker etching metal layer - Google Patents
The method of metal residual after elimination infrared focal plane array seeker etching metal layer Download PDFInfo
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- CN105932095B CN105932095B CN201610307820.4A CN201610307820A CN105932095B CN 105932095 B CN105932095 B CN 105932095B CN 201610307820 A CN201610307820 A CN 201610307820A CN 105932095 B CN105932095 B CN 105932095B
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- metal layer
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- focal plane
- plane array
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- 239000002184 metal Substances 0.000 title claims abstract description 145
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 145
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000005530 etching Methods 0.000 title claims abstract description 37
- 230000008030 elimination Effects 0.000 title claims abstract description 23
- 238000003379 elimination reaction Methods 0.000 title claims abstract description 23
- 239000003989 dielectric material Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000001312 dry etching Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The invention provides a kind of method of metal residual after elimination infrared focal plane array seeker etching metal layer, including：First step：The first metal layer and second metal layer are sequentially formed on the surface of the layer of dielectric material on substrate；Second step：Dry etching is carried out to the first metal layer and second metal layer, so as to form expected pattern in the first metal layer and second metal layer；Third step：Form additional metal layer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of eliminate infrared focal plane array
The method of metal residual after metal detector layer etching.
Background technology
MEMS (MEMS, Micro-Electro Mechanical System) is by microelectric technique and machinery
Engineered fusion is to a kind of industrial technology together.The opereating specification of MEMS technology is in micrometer range.MEMS technology is partly to lead
Grow up based on body manufacturing technology.It is a series of that MEMS technology employs photoetching, the burn into film in semiconductor technology etc.
Prior art in and material.
In MEMS infrared focal plane array seekers (infrared thermal imaging sensor) manufacturing process, the etching of metal level,
Due to need to only etch away Al, but to retain Ti, therefore the method for using wet etching.After wet etching, the total surface of Ti is to have
The residue of Al cannot be removed, and specifically, Fig. 1 schematically shows the infrared focal plane array seeker system according to prior art
Make the microscopical view of the residue of the Al on the surface of Ti caused by method.
More specifically, Fig. 2 and Fig. 3 schematically show being manufactured according to the infrared focal plane array seeker of prior art
The schematic diagram of method.As shown in Figures 2 and 3, it is first in the infrared focal plane array seeker manufacture method according to prior art
Ti layers 30 and Al layers 40 first is sputtered on the surface of SiN layer 20 over the substrate 10, then wet etching, and wet method are carried out to Al layers 40
Etching is parked on Ti layers 30.But last Ti layers 30 surface has the residual 41 of Al.
Accordingly, it is desirable to a kind of infrared focal plane array seeker manufacturer that can eliminate the prior art can be provided
The method of the residue of the Al on the surface of Ti caused by method.
The content of the invention
The technical problems to be solved by the invention are directed to and there is drawbacks described above in the prior art, there is provided one kind can be eliminated
The method of the residue of the Al on the surface of Ti caused by the infrared focal plane array seeker manufacture method of prior art.
In order to realize above-mentioned technical purpose, according to the present invention, there is provided one kind eliminates infrared focal plane array seeker gold
The method of metal residual after category layer etching, including：
First step：The first metal layer and second metal layer are sequentially formed on the surface of the layer of dielectric material on substrate；
Second step：Dry etching is carried out to the first metal layer and second metal layer, so as in the first metal layer and second
Expected pattern is formed in metal level；
Third step：Formed and the first metal layer material identical additional metal layer.
Preferably, it is described elimination infrared focal plane array seeker etching metal layer after metal residual method in, institute
State eliminate infrared focal plane array seeker etching metal layer after metal residual method be used for manufacture infrared focal plane array spy
Survey device.
Preferably, it is described elimination infrared focal plane array seeker etching metal layer after metal residual method in,
In first step, by sequentially forming the first metal layer and the second metal on the surface for sputtering at the layer of dielectric material on substrate
Layer.
Preferably, it is described elimination infrared focal plane array seeker etching metal layer after metal residual method in, lining
Bottom is silicon substrate.
Preferably, after the elimination infrared focal plane array seeker etching metal layer in the method for metal residual, the
The described of two steps is dry-etched in layer of dielectric material stopping.
Preferably, after the elimination infrared focal plane array seeker etching metal layer in the method for metal residual, the
Two steps include：Photoresist layer is formed on the first and second metal levels, and forms photoetching agent pattern, followed by formation light
The photoresist layer of photoresist pattern carries out dry etching to the first metal layer and second metal layer, so as in the first metal layer and second
Expected pattern is formed in metal level.
Preferably, it is described elimination infrared focal plane array seeker etching metal layer after metal residual method in, institute
State additional metal layer and cover exposed layer of dielectric material.
Preferably, it is described elimination infrared focal plane array seeker etching metal layer after metal residual method in, institute
State top and side wall that additional metal layer covers the remaining the first metal layer of dry etching and second metal layer.
Preferably, it is described elimination infrared focal plane array seeker etching metal layer after metal residual method in,
In third step, formed and the first metal layer material identical additional metal layer by sputtering.
Preferably, it is described elimination infrared focal plane array seeker etching metal layer after metal residual method in, institute
It is SiN layer to state layer of dielectric material, and the first metal layer is Ti, and second metal layer is Al layers, or can be changed to second metal layer
TiN, additional metal layer is Ti layers.
The method of metal residual after using elimination infrared focal plane array seeker etching metal layer of the invention
Afterwards, due to using the second of the disposable the first metal layer for having etched such as Ti layers etc of dry etching and such as Al layers etc
Metal level to form desired pattern, then in covering and the first metal layer material identical additional metal layer, so as to effectively disappear
Except the second metal layer on the first metal layer surface caused by the infrared focal plane array seeker manufacture method of prior art is residual
Slag.
Brief description of the drawings
With reference to accompanying drawing, and by reference to following detailed description, it will more easily have more complete understanding to the present invention
And its adjoint advantages and features is more easily understood, wherein：
Fig. 1 is to schematically show Ti caused by the infrared focal plane array seeker manufacture method according to prior art
Surface Al residue microscopical view.
Fig. 2 is the signal for schematically showing the infrared focal plane array seeker manufacture method according to prior art
Figure.
Fig. 3 is the signal for schematically showing the infrared focal plane array seeker manufacture method according to prior art
Figure.
Fig. 4 schematically shows elimination infrared focal plane array seeker metal level according to the preferred embodiment of the invention
The first step of the method for metal residual after etching.
Fig. 5 schematically shows elimination infrared focal plane array seeker metal level according to the preferred embodiment of the invention
The second step of the method for metal residual after etching.
Fig. 6 schematically shows elimination infrared focal plane array seeker metal level according to the preferred embodiment of the invention
The third step of the method for metal residual after etching.
Fig. 7 is schematically shown using elimination infrared focal plane array seeker according to the preferred embodiment of the invention
The semiconductor structure microscopical view obtained after the method for metal residual after etching metal layer.
It should be noted that accompanying drawing is used to illustrate the present invention, it is not intended to limit the present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.Also, in accompanying drawing, same or similar element indicates same or similar label.
Specific embodiment
In order that present disclosure is more clear and understandable, with reference to specific embodiments and the drawings to of the invention interior
Appearance is described in detail.
Fig. 4 to Fig. 6 schematically shows elimination infrared focal plane array seeker according to the preferred embodiment of the invention
Each step of the method for metal residual after etching metal layer.
As shown in Figures 4 to 6, elimination infrared focal plane array seeker metal level erosion according to the preferred embodiment of the invention
The method of metal residual includes after quarter：
First step：The first metal is sequentially formed on the surface of layer of dielectric material (for example, SiN layer 20) over the substrate 10
Layer and second metal layer；For example, the first metal layer and second metal layer are respectively Ti layers 30 and Al layers or TiN layer 40；
Preferably, in the first step, Ti layers 30 is sequentially formed on the surface of the SiN layer 20 by sputtering over the substrate 10
With Al layers or TiN layer 40, as shown in Figure 4.
For example, substrate 10 is silicon substrate.
Second step：Dry etching is carried out to Ti layers 30 and Al layers or TiN layer 40, so as in Ti layers 30 and Al layers or TiN
Expected pattern is formed in layer 40；
Specifically, the SiN layer 20 that is dry-etched in stops, and metal residual, such as Fig. 5 will not be formed after the second step
It is shown.
For example, second step includes：Photoresist layer is formed on Al layers or TiN layer 40, and forms photoetching agent pattern, with
Dry etching is carried out to Ti layers 30 and Al layers or TiN layer 40 using the photoresist layer for forming photoetching agent pattern afterwards, so as at Ti layers
Expected pattern is formed in 30 and Al layers or TiN layer 40.
Third step：Formed and the first metal layer material identical additional metal layer；For example, additional metal layer is another Ti
Layer 50.
For example, in third step, additional metal layer is formed by sputtering.
For example, as shown in fig. 6, additional Ti layers 50 covers exposed SiN layer 20, and additional Ti layers 50 covers dry method
Etch top and the side wall of remaining Ti layers 30 and Al layers or TiN layer 40.
Then, the remaining step of infrared focal plane array seeker manufacture can be performed.
Metal residual after elimination infrared focal plane array seeker etching metal layer according to the preferred embodiment of the invention
Method is advantageously used for the manufacture of infrared focal plane array seeker.
Fig. 7 is schematically shown using elimination infrared focal plane array seeker gold according to the preferred embodiment of the invention
The semiconductor structure microscopical view obtained after the method for metal residual after category layer etching.As shown in fig. 7, using according to the present invention
After the elimination infrared focal plane array seeker etching metal layer of preferred embodiment after the method for metal residual, effectively eliminate
The residue of the metal on the surface of Ti caused by the infrared focal plane array seeker manufacture method of prior art.
That is, in the present invention, due to using disposable the first gold medal for having etched such as Ti layers etc of dry etching
Belong to the second metal layer of layer and such as Al layers etc to form desired pattern, then in covering and the first metal layer material identical
Additional metal layer, so as to the first gold medal caused by the infrared focal plane array seeker manufacture method for effectively eliminating prior art
Belong to the second metal layer residue of layer surface.
Furthermore, it is necessary to explanation, unless stated otherwise or points out, term " first " otherwise in specification, " the
Two ", description such as " 3rd " is used only for distinguishing each component, element, step in specification etc., without being intended to indicate that each
Logical relation or ordinal relation between component, element, step etc..
Although it is understood that the present invention is disclosed as above with preferred embodiment, but above-described embodiment and being not used to
Limit the present invention.For any those of ordinary skill in the art, in the case where technical solution of the present invention ambit is not departed from,
Many possible variations and modification are all made to technical solution of the present invention using the technology contents of the disclosure above, or is revised as
With the Equivalent embodiments of change.Therefore, every content without departing from technical solution of the present invention, according to technical spirit pair of the invention
Any simple modification, equivalent variation and modification made for any of the above embodiments, still fall within the scope of technical solution of the present invention protection
It is interior.
Claims (10)
1. it is a kind of eliminate infrared focal plane array seeker etching metal layer after metal residual method, it is characterised in that including：
First step：The first metal layer and second metal layer are sequentially formed on the surface of the layer of dielectric material on substrate；
Second step：Dry etching is carried out to the first metal layer and second metal layer, until layer of dielectric material stopping is etched into, from
And expected pattern is formed in the first metal layer and second metal layer；
Third step：Formed and the first metal layer additional gold of material identical on the surface of the first metal layer and second metal layer
Category layer.
2. it is according to claim 1 eliminate infrared focal plane array seeker etching metal layer after metal residual method,
Characterized in that, the method for metal residual is used to manufacture infrared after the elimination infrared focal plane array seeker etching metal layer
Focal plane array detector.
3. it is according to claim 1 and 2 eliminate infrared focal plane array seeker etching metal layer after metal residual side
Method, it is characterised in that in the first step, by sequentially forming the first gold medal on the surface for sputtering at the layer of dielectric material on substrate
Category layer and second metal layer.
4. it is according to claim 1 and 2 eliminate infrared focal plane array seeker etching metal layer after metal residual side
Method, it is characterised in that substrate is silicon substrate.
5. it is according to claim 1 and 2 eliminate infrared focal plane array seeker etching metal layer after metal residual side
Method, it is characterised in that the described of second step is dry-etched in layer of dielectric material stopping.
6. it is according to claim 1 and 2 eliminate infrared focal plane array seeker etching metal layer after metal residual side
Method, it is characterised in that second step includes：Photoresist layer is formed on the first metal layer, and forms photoetching agent pattern, then
Dry etching is carried out to the first metal layer and second metal layer using the photoresist layer for forming photoetching agent pattern, so as in the first gold medal
Expected pattern is formed in category layer and second metal layer.
7. it is according to claim 1 and 2 eliminate infrared focal plane array seeker etching metal layer after metal residual side
Method, it is characterised in that the additional metal layer covers exposed layer of dielectric material.
8. it is according to claim 1 and 2 eliminate infrared focal plane array seeker etching metal layer after metal residual side
Method, it is characterised in that the additional metal layer covers the top of the remaining the first metal layer of dry etching and second metal layer
With side wall.
9. it is according to claim 1 and 2 eliminate infrared focal plane array seeker etching metal layer after metal residual side
Method, it is characterised in that in third step, additional metal layer is formed by sputtering.
10. it is according to claim 1 and 2 eliminate infrared focal plane array seeker etching metal layer after metal residual side
Method, it is characterised in that the layer of dielectric material is SiN layer, and the first metal layer is Ti, second metal layer is Al or TiN layer,
Additional metal layer is Ti layers.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610307820.4A CN105932095B (en) | 2016-05-11 | 2016-05-11 | The method of metal residual after elimination infrared focal plane array seeker etching metal layer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610307820.4A CN105932095B (en) | 2016-05-11 | 2016-05-11 | The method of metal residual after elimination infrared focal plane array seeker etching metal layer |
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| CN105932095B true CN105932095B (en) | 2017-06-16 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04342133A (en) * | 1991-05-17 | 1992-11-27 | Ricoh Co Ltd | Manufacture of semiconductor device |
| US5641382A (en) * | 1996-02-02 | 1997-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to remove residue of metal etch |
| US7323403B2 (en) * | 2004-11-29 | 2008-01-29 | Texas Instruments Incroporated | Multi-step process for patterning a metal gate electrode |
| CN103050374A (en) * | 2011-10-17 | 2013-04-17 | 中芯国际集成电路制造(北京)有限公司 | Processing method after etching |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101226667B1 (en) * | 2006-01-12 | 2013-01-25 | 삼성디스플레이 주식회사 | Method for manufacturing metal line and display substrate having the metal line |
-
2016
- 2016-05-11 CN CN201610307820.4A patent/CN105932095B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04342133A (en) * | 1991-05-17 | 1992-11-27 | Ricoh Co Ltd | Manufacture of semiconductor device |
| US5641382A (en) * | 1996-02-02 | 1997-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to remove residue of metal etch |
| US7323403B2 (en) * | 2004-11-29 | 2008-01-29 | Texas Instruments Incroporated | Multi-step process for patterning a metal gate electrode |
| CN103050374A (en) * | 2011-10-17 | 2013-04-17 | 中芯国际集成电路制造(北京)有限公司 | Processing method after etching |
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