CN105932095A - Method for eliminating residual metal after etching of metal layer of infrared focal plane array detector - Google Patents
Method for eliminating residual metal after etching of metal layer of infrared focal plane array detector Download PDFInfo
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- CN105932095A CN105932095A CN201610307820.4A CN201610307820A CN105932095A CN 105932095 A CN105932095 A CN 105932095A CN 201610307820 A CN201610307820 A CN 201610307820A CN 105932095 A CN105932095 A CN 105932095A
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- metal layer
- layer
- metal
- focal plane
- etching
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- 239000002184 metal Substances 0.000 title claims abstract description 140
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 140
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000005530 etching Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000001312 dry etching Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 8
- 230000008030 elimination Effects 0.000 claims description 23
- 238000003379 elimination reaction Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000003989 dielectric material Substances 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 241000416536 Euproctis pseudoconspersa Species 0.000 claims 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000011089 mechanical engineering Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The invention provides a method for eliminating residual metal after etching of a metal layer of an infrared focal plane array detector. The method comprises the following steps: 1. forming a first metal layer and a second metal layer on a surface of a medium material layer on a substrate; 2. conducting dry etching on the first metal layer and the second metal layer so as to form expected patterns on the first metal layer and the second metal layer; 3. forming an additional metal layer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of infrared Jiao of elimination puts down
The method of metal residual after area array detector etching metal layer.
Background technology
MEMS (MEMS, Micro-Electro Mechanical System) be by microelectric technique with
A kind of industrial technology that mechanical engineering is fused together.The opereating specification of MEMS technology is in micrometer range.
MEMS technology grows up based on semiconductor fabrication.MEMS technology have employed quasiconductor
A series of prior art and the materials such as photoetching in technology, burn into thin film.
In MEMS infrared focal plane array seeker (infrared thermal imaging sensor) manufacturing process, metal
The etching of layer, owing to Al only need to be etched away, but Ti to be retained, therefore the method using wet etching.Wet method is lost
After quarter, the total surface of Ti is that the residue having Al cannot be removed, and specifically, Fig. 1 schematically shows root
The residue of the Al on the surface of the Ti caused according to the infrared focal plane array seeker manufacture method of prior art aobvious
Micro-view.
Visit more specifically, Fig. 2 and Fig. 3 schematically shows the infrared focal plane array according to prior art
Survey the schematic diagram of device manufacture method.As shown in Figures 2 and 3, in the infrared focus plane battle array according to prior art
In row detector manufacture method, SiN layer 20 surface the most over the substrate 10 sputters Ti layer 30 and Al
Layer 40, then Al layer 40 is carried out wet etching, and also wet etching is parked on Ti layer 30.But last Ti
The surface of layer 30 has the residual 41 of Al.
Accordingly, it is desirable to a kind of infrared focal plane array seeker that can eliminate described prior art can be provided
The method of the residue of the Al on the surface of the Ti that manufacture method causes.
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that Yi Zhongneng
Enough eliminate the residue of the Al on the surface of the Ti that the infrared focal plane array seeker manufacture method of prior art causes
Method.
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that a kind of infrared focal plane array that eliminates is visited
The method of metal residual after survey device etching metal layer, including:
First step: sequentially form the first metal layer and the second gold medal on the surface of the layer of dielectric material on substrate
Belong to layer；
Second step: the first metal layer and the second metal level are carried out dry etching, thus at the first metal layer
With formation expection pattern in the second metal level；
Third step: form the additional metal layer identical with the first metal layer material.
Preferably, the method for metal residual after described elimination infrared focal plane array seeker etching metal layer
In, after described elimination infrared focal plane array seeker etching metal layer, the method for metal residual is used for manufacturing red
Outer focal plane array detector.
Preferably, the method for metal residual after described elimination infrared focal plane array seeker etching metal layer
In, in the first step, sequentially form the first gold medal on the surface of the layer of dielectric material on substrate by sputtering at
Belong to layer and the second metal level.
Preferably, the method for metal residual after described elimination infrared focal plane array seeker etching metal layer
In, substrate is silicon substrate.
Preferably, the method for metal residual after described elimination infrared focal plane array seeker etching metal layer
In, it is dry-etched in layer of dielectric material described in second step and stops.
Preferably, the method for metal residual after described elimination infrared focal plane array seeker etching metal layer
In, second step includes: forms photoresist layer on the first and second metal levels, and forms photoresist figure
Case, carries out dry method followed by the photoresist layer forming photoetching agent pattern to the first metal layer and the second metal level
Etching, thus in the first metal layer and the second metal level, form expection pattern.
Preferably, the method for metal residual after described elimination infrared focal plane array seeker etching metal layer
In, described additional metal layer covers the layer of dielectric material of exposure.
Preferably, the method for metal residual after described elimination infrared focal plane array seeker etching metal layer
In, described additional metal layer cover the remaining the first metal layer of dry etching and the second metal level top and
Sidewall.
Preferably, the method for metal residual after described elimination infrared focal plane array seeker etching metal layer
In, in third step, form the additional metal layer identical with the first metal layer material by sputtering.
Preferably, the method for metal residual after described elimination infrared focal plane array seeker etching metal layer
In, described layer of dielectric material is SiN layer, and the first metal layer is Ti, and the second metal level is Al layer, or can
Changing the second metal level into TiN, additional metal layer is Ti layer.
Metal residual after using the elimination infrared focal plane array seeker etching metal layer according to the present invention
After method, owing to using dry etching disposably to etch the first metal layer and such as of such as Ti layer etc
Second metal level of Al layer etc is to form desired pattern, identical with the first metal layer material in covering subsequently
Additional metal layer, thus the infrared focal plane array seeker manufacture method effectively eliminating prior art is led
The second metal level residue on the first metal layer surface caused.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete
Understand and its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 is to schematically show the infrared focal plane array seeker manufacture method according to prior art to lead
The microscopical view of the residue of the Al on the surface of the Ti caused.
Fig. 2 is to schematically show the infrared focal plane array seeker manufacture method according to prior art
Schematic diagram.
Fig. 3 is to schematically show the infrared focal plane array seeker manufacture method according to prior art
Schematic diagram.
Fig. 4 schematically shows and eliminates infrared focal plane array seeker according to the preferred embodiment of the invention
The first step of the method for metal residual after etching metal layer.
Fig. 5 schematically shows and eliminates infrared focal plane array seeker according to the preferred embodiment of the invention
The second step of the method for metal residual after etching metal layer.
Fig. 6 schematically shows and eliminates infrared focal plane array seeker according to the preferred embodiment of the invention
The third step of the method for metal residual after etching metal layer.
Fig. 7 is to schematically show employing to eliminate infrared focal plane array according to the preferred embodiment of the invention
The semiconductor structure microscopical view obtained after the method for metal residual after the etching of metal detector layer.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention.Note, represent structure
Accompanying drawing may be not necessarily drawn to scale.Further, in accompanying drawing, same or like element indicate identical or
The label that person is similar to.
Detailed description of the invention
In order to make present disclosure more clear and understandable, below in conjunction with specific embodiments and the drawings to this
Bright content is described in detail.
Fig. 4 to Fig. 6 schematically shows and eliminates infrared focal plane array according to the preferred embodiment of the invention
Each step of the method for metal residual after the etching of metal detector layer.
As shown in Figures 4 to 6, infrared focal plane array seeker is eliminated according to the preferred embodiment of the invention
After etching metal layer, the method for metal residual includes:
First step: shape successively on the surface of layer of dielectric material (such as, SiN layer 20) over the substrate 10
Become the first metal layer and the second metal level；Such as, the first metal layer and the second metal level are Ti layer 30 respectively
With Al layer or TiN layer 40；
Preferably, in the first step, by the surface of sputtering SiN layer 20 over the substrate 10 successively
Form Ti layer 30 and Al layer or TiN layer 40, as shown in Figure 4.
Such as, substrate 10 is silicon substrate.
Second step: Ti layer 30 and Al layer or TiN layer 40 are carried out dry etching, thus at Ti layer 30
With formation expection pattern in Al layer or TiN layer 40；
Specifically, described in be dry-etched in SiN layer 20 and stop, metal will not be formed after the second step residual
Stay, as shown in Figure 5.
Such as, second step includes: forms photoresist layer on Al layer or TiN layer 40, and forms light
Photoresist pattern, followed by forming the photoresist layer of photoetching agent pattern to Ti layer 30 and Al layer or TiN layer 40
Carry out dry etching, thus in Ti layer 30 and Al layer or TiN layer 40, form expection pattern.
Third step: form the additional metal layer identical with the first metal layer material；Such as, additional metal layer
It it is another Ti layer 50.
Such as, in third step, form additional metal layer by sputtering.
Such as, as shown in Figure 6, additional Ti layer 50 covers the SiN layer 20 of exposure, and additional Ti layer
50 cover dry etching remaining Ti layer 30 and Al layer or the top of TiN layer 40 and sidewall.
Subsequently, the remaining step that infrared focal plane array seeker manufactures can be performed.
After eliminating infrared focal plane array seeker etching metal layer according to the preferred embodiment of the invention, metal is residual
The method stayed is advantageously used for the manufacture of infrared focal plane array seeker.
Fig. 7 schematically shows employing and eliminates infrared focal plane array spy according to the preferred embodiment of the invention
The semiconductor structure microscopical view obtained after the method for metal residual after surveying device etching metal layer.As it is shown in fig. 7,
Metal after employing eliminates infrared focal plane array seeker etching metal layer according to the preferred embodiment of the invention
After the method for residual, the infrared focal plane array seeker manufacture method effectively eliminating prior art is led
The residue of the metal on the surface of the Ti caused.
It is to say, in the present invention, owing to using dry etching disposably to etch such as Ti layer etc
Second metal level of the first metal layer and such as Al layer etc, to form desired pattern, is covering and first subsequently
The additional metal layer that metal layer material is identical, thus effectively eliminate the infrared focal plane array of prior art
The second metal level residue on the first metal layer surface that detector manufacture method causes.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ",
" second ", " the 3rd " etc. describe be used only for distinguishing in description each assembly, element, step etc., and not
It is intended to indicate that the logical relation between each assembly, element, step or ordering relation etc..
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment is also
It is not used to limit the present invention.For any those of ordinary skill in the art, without departing from skill of the present invention
In the case of art aspects, technical solution of the present invention is made many by the technology contents that all may utilize the disclosure above
Possible variation and modification, or it is revised as the Equivalent embodiments of equivalent variations.Therefore, every without departing from this
The content of bright technical scheme, according to the present invention technical spirit to any simple modification made for any of the above embodiments,
Equivalent variations and modification, all still fall within the range of technical solution of the present invention protection.
Claims (10)
1. eliminate a method for metal residual, its feature after infrared focal plane array seeker etching metal layer
It is to include:
First step: sequentially form the first metal layer and the second gold medal on the surface of the layer of dielectric material on substrate
Belong to layer；
Second step: the first metal layer and the second metal level are carried out dry etching, thus at the first metal layer
With formation expection pattern in the second metal level；
Third step: form the additional metal layer identical with the first metal layer material.
After elimination infrared focal plane array seeker etching metal layer the most according to claim 1, metal is residual
The method stayed, it is characterised in that after described elimination infrared focal plane array seeker etching metal layer, metal is residual
The method stayed is for manufacturing infrared focal plane array seeker.
Gold after elimination infrared focal plane array seeker etching metal layer the most according to claim 1 and 2
The method belonging to residual, it is characterised in that in the first step, by sputtering at the layer of dielectric material on substrate
Surface on sequentially form the first metal layer and the second metal level.
Gold after elimination infrared focal plane array seeker etching metal layer the most according to claim 1 and 2
The method belonging to residual, it is characterised in that substrate is silicon substrate.
Gold after elimination infrared focal plane array seeker etching metal layer the most according to claim 1 and 2
The method belonging to residual, it is characterised in that be dry-etched in layer of dielectric material described in second step and stop.
Gold after elimination infrared focal plane array seeker etching metal layer the most according to claim 1 and 2
The method belonging to residual, it is characterised in that second step includes: form photoresist layer on the first metal layer,
And form photoetching agent pattern, followed by forming the photoresist layer of photoetching agent pattern to the first metal layer and the
Two metal levels carry out dry etching, thus form expection pattern in the first metal layer and the second metal level.
Gold after elimination infrared focal plane array seeker etching metal layer the most according to claim 1 and 2
The method belonging to residual, it is characterised in that described additional metal layer covers the layer of dielectric material of exposure.
Gold after elimination infrared focal plane array seeker etching metal layer the most according to claim 1 and 2
The method belonging to residual, it is characterised in that described additional metal layer covers remaining first metal of dry etching
Layer and the top of the second metal level and sidewall.
Gold after elimination infrared focal plane array seeker etching metal layer the most according to claim 1 and 2
The method belonging to residual, it is characterised in that in third step, forms additional metal layer by sputtering.
After elimination infrared focal plane array seeker etching metal layer the most according to claim 1 and 2
The method of metal residual, it is characterised in that described layer of dielectric material is SiN layer, and the first metal layer is
Ti, the second metal level is Al or TiN layer, and additional metal layer is Ti layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610307820.4A CN105932095B (en) | 2016-05-11 | 2016-05-11 | The method of metal residual after elimination infrared focal plane array seeker etching metal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610307820.4A CN105932095B (en) | 2016-05-11 | 2016-05-11 | The method of metal residual after elimination infrared focal plane array seeker etching metal layer |
Publications (2)
| Publication Number | Publication Date |
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| CN105932095A true CN105932095A (en) | 2016-09-07 |
| CN105932095B CN105932095B (en) | 2017-06-16 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04342133A (en) * | 1991-05-17 | 1992-11-27 | Ricoh Co Ltd | Manufacture of semiconductor device |
| US5641382A (en) * | 1996-02-02 | 1997-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to remove residue of metal etch |
| US20070158306A1 (en) * | 2006-01-12 | 2007-07-12 | Samsung Electronics Co., Ltd | Method of forming a metal line and method of manufacturing display substrate having the same |
| US7323403B2 (en) * | 2004-11-29 | 2008-01-29 | Texas Instruments Incroporated | Multi-step process for patterning a metal gate electrode |
| CN103050374A (en) * | 2011-10-17 | 2013-04-17 | 中芯国际集成电路制造(北京)有限公司 | Processing method after etching |
-
2016
- 2016-05-11 CN CN201610307820.4A patent/CN105932095B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04342133A (en) * | 1991-05-17 | 1992-11-27 | Ricoh Co Ltd | Manufacture of semiconductor device |
| US5641382A (en) * | 1996-02-02 | 1997-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to remove residue of metal etch |
| US7323403B2 (en) * | 2004-11-29 | 2008-01-29 | Texas Instruments Incroporated | Multi-step process for patterning a metal gate electrode |
| US20070158306A1 (en) * | 2006-01-12 | 2007-07-12 | Samsung Electronics Co., Ltd | Method of forming a metal line and method of manufacturing display substrate having the same |
| CN103050374A (en) * | 2011-10-17 | 2013-04-17 | 中芯国际集成电路制造(北京)有限公司 | Processing method after etching |
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| CN105932095B (en) | 2017-06-16 |
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