CN105917473B - The method of sub- solar energy module is manufactured in thin-layer solar module for the insulated trench by electric insulation and there is the method for the thin-layer solar module of such insulated trench for manufacture - Google Patents
The method of sub- solar energy module is manufactured in thin-layer solar module for the insulated trench by electric insulation and there is the method for the thin-layer solar module of such insulated trench for manufacture Download PDFInfo
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- CN105917473B CN105917473B CN201480048042.0A CN201480048042A CN105917473B CN 105917473 B CN105917473 B CN 105917473B CN 201480048042 A CN201480048042 A CN 201480048042A CN 105917473 B CN105917473 B CN 105917473B
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000009413 insulation Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 claims abstract description 19
- 241000931526 Acer campestre Species 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000002045 lasting effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims description 2
- 210000001367 artery Anatomy 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 210000003462 vein Anatomy 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000446313 Lamella Species 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention relates to a kind of method for being used to manufacture sub- solar energy module in thin-layer solar module by the insulated trench being electrically insulated, the thin-layer solar module is built by integral type thin-layer solar cell interconnected amongst one another, and this method has steps of：Laser with optical maser wavelength is provided；Substrate (1) with the first side and the second side is provided, the substrate is transparent for optical maser wavelength, wherein, first side of substrate (1) has a thin-layer solar cell of multiple integral types interconnection, and these thin-layer solar cells are built by the back electrode thin layer (2) of metal, the absorption thin layer (3) being arranged on the back electrode thin layer (2) of metal and the preceding electrode structure (4) that is arranged on the absorption thin layer；Laser beam (L) is injected into substrate；Laser beam (L) is moved along at least one line of cut (S) in substrate (1) and/or substrate (1) is moved relative to laser beam (L), to produce at least one insulated trench (I1, I2, I3, I4) by the relative motion between laser beam (L) and substrate (1).Arranged according to the present invention is, laser beam (L) is injected on the second side of substrate (1), fall on the back electrode thin layer (2) of metal and adjusted as follows with the laser pulse in the range of psec or femtosecond and the relative motion laser beam (L) and substrate (1) is implemented as follows through substrate (1), i.e., the absorption thin layer (3) on the back electrode thin layer for being arranged in the metal and the preceding electrode structure (4) being arranged on the absorption thin layer are ablated off along line of cut (S) from substrate (1) together with the back electrode thin layer (2) of metal.
Description
Technical field
It is used to manufacture sub- solar energy in thin-layer solar module by the insulated trench being electrically insulated the present invention relates to a kind of
The method of module, and be used to manufacture the thin-layer solar module with such insulated trench the invention further relates to a kind of
Method.
Background technology
Thin-layer solar module generally has the thin-layer solar cell of integral type interconnected in series.It is mutual in order to establish integral type
Even, it is sequentially depositing for preceding electrode and back electrode and for photovoltaic absorber thin layer.Complete these three veneer mistakes
After each in journey, structuring step is all carried out first, finally to set up band that is single and being disposed adjacent to
The integral type interconnected in series of the thin-layer solar cell of shape.
This successively alternate veneer and structuring for example as well known to DE 3129344A1.It is equally known by the document
, so-called insulated trench is generated, these insulated trench have cut off whole thin layer heap until substrate.These insulated trench hang down
Directly extend in the development length direction of banded thin-layer solar cell.Therefore, insulated trench causes solar energy module
It is divided into multiple sub- solar energy modules in parallel separately from each other being disposed adjacent in identical substrate.The sub-modular structure band
Series of advantages is carried out.If surface occurs when thin-layer solar module is run is at least partially obscured light, photoelectric current is not produced
The battery of the light that is blocked worked for the battery that remaining is connected as ohmic resistor.As Ohmic resistance
The temperature-independent of the solar cell of what device worked be blocked light is in the total current for the thin-layer solar cell for flowing through series connection
Rise to intensity, therefore so-called hot spot (Hotspots) occur.These hot spots reduce the efficiency of solar energy module, but
The local damage of solar energy module may be caused.By the way that solar energy module is divided into multiple submodule, hence it is evident that reduce this
Same purpose, the by-passed resistor as caused by production (Shunt current dividers) are shut out the light or risen to whole solar energy module
The influence of function.
Such as it can be carved into or produce insulated trench by laser beam.Produced by laser beam such
Insulated trench is for example as well known to US 4,667,058.Therefore, providing transparent for optical maser wavelength has the first side
With the substrate of the second side, wherein, the first side of substrate has the thin-layer solar cell of multiple integral types interconnection, thin-film solar
Battery by back electrode thin layer, the absorption thin layer being arranged on back electrode thin layer and be arranged in absorb thin layer on preceding electrode structure Lai
Structure.Laser beam is injected into substrate, and laser beam moved along at least one line of cut in substrate and/or
Substrate is moved relative to laser beam, to produce at least one isolation trench by the relative motion between laser beam and substrate
Groove.
But when using by structural method known in the art by laser beam disadvantageously, due to thin layer material
Melting, evaporation, the distillation of material exist following dangerous, i.e. after distilling after layer material condenses and solidifies or again, are producing
Insulated trench side on may occur short circuit between electrode layers.In order to tackle the danger, existed according to US 4,667,058
Inscribe insulated trench and perform etching step, especially plasma etch step afterwards, it is removed on the side of insulated trench
The residue of short circuit or branch may be caused.
Scratch method for by mechanical and necessarily bear mechanical wear come the instrument needed for for producing insulated trench
And therefore show as important cost factor.Follow-up etching step is needed by insulated trench caused by laser, to clear
It is clean by side caused by laser beam and equally show as production in add time factor and cost factor.
The content of the invention
Because the whole production process of photovoltaic industry there are huge cost pressure, therefore the task of the present invention is,
There is provided it is a kind of be used for by be electrically insulated insulated trench manufactured in thin-layer solar module solar energy module method and
A kind of method for being used to manufacture the thin-layer solar module with such insulated trench is provided, these methods are that cost is bright
It is aobvious less expensive.
The task is used to manufacture sub- solar energy in thin-layer solar module by the insulated trench being electrically insulated by a kind of
The method of module is solved, and the thin-layer solar module is built by integral type thin-layer solar cell interconnected amongst one another, institute
The method of stating has steps of：
- laser with optical maser wavelength is provided,
- substrate with the first side and the second side is provided, the substrate be for the optical maser wavelength it is transparent, its
In, the first side of the substrate has the thin-layer solar cell of multiple integral type interconnection, and the thin-layer solar cell is by gold
The back electrode thin layer of category, the absorption thin layer being arranged on the back electrode thin layer of the metal and be arranged in it is described absorption thin layer on
Preceding electrode structure is built,
- laser beam is injected into the substrate,
- laser beam is moved on the substrate along at least one line of cut and/or make the substrate relative
Moved in the laser beam, to produce at least one insulated trench by the relative motion between laser beam and substrate,
Characterized in that,
The laser beam is injected on the second side of the substrate, fallen on through the substrate metal the back of the body electricity
In thin layer, and the laser beam is adjusted and described as follows with the laser pulse in the range of psec or femtosecond
Relative motion between laser beam and substrate is implemented as follows, i.e. will together with the back electrode thin layer of the metal
The absorption thin layer that is arranged on the back electrode thin layer of the metal and the preceding electrode structure that is arranged on the absorption thin layer along
The line of cut is ablated off from the substrate.
It is arranged according to the present invention, laser beam is injected on the second side of substrate, falls on metal through substrate
Adjusted as follows on back electrode thin layer and with the laser pulse in the range of psec or femtosecond and laser beam and base
Relative motion between bottom is implemented as follows, i.e. will be arranged in the back of the body of the metal together with the back electrode thin layer of metal
Absorption thin layer on electrode thin layer is ablated off with the preceding electrode structure being arranged on the absorption thin layer along line of cut from substrate.Greatly
In 1 femtosecond until the scope less than 1000 psecs is construed as picosecond range and femtosecond scope.Even if preceding electrode structure point
When being spent with the thickness in several micrometer ranges, such mechanism of action also works section.This is, for example, following situation,
That is, preceding electrode structure is configured to by the transparent thin layer that forms of oxide of conduction is with netted constructed thereon, form is
The assembly of the thicker layer of Electrical bus structure.If laser pulse is fallen in Electrical bus structure from light incident side, then
These laser pulses do not generate groove or hole until substrate of glass in this region.
Because the laser beam in the range of psec or femtosecond has energy density on the very high time and spatially, so
Generally occurred without in the region of line of cut and layer material is melted and evaporated.The Sasser generated in the range of laser pulse
Cause whole thin layer stacked group along it is laser induced go out the explosion type of the direction of motion of Sasser strip off.Due to the Sasser from
The interface of back electrode thin layer/substrate is risen outwardly, so the coating granules stripped off are outwards dished out from substrate herein.Leave
There is in the thin layer stacked group groove of fracture seamed edge, and there is no fracture particle.
Important parameter is on the time of the laser energy of every volume unit and per time unit's releasing and change spatially
Change curve.This depends on following parameter, such as wavelength, pulse duration, pulse energy, pulse frequency, pulse diameters, beam
Type exterior feature and the relative motion between laser beam and substrate.
Preferably, optical maser wavelength is being selected close in infra-red range or in the spectral range of visible ray.Possible laser
Wavelength is, for example, 515nm, 532nm, 1030nm, 1047nm, 1053nm, 1060nm, 1064nm, 1080nm and 1150nm.On a small quantity
What the solid-state laser of doping was especially suitable for.Accordingly, it is possible to optical maser wavelength be its fundamental wavelength and more high order harmonic wave.It is preferred that
Ground, use the pulse type laser with the pulse frequency in the range of 33.3kHz to 400kHz.
Advantageously, laser beam passive movement, so that it is guaranteed that the 10% of the laser pulse followed in succession along line of cut to
95%, preferably 15% to 30% is spatially overlapping.Here, it is preferred that using per laser pulse in the range of 5 μ J to 125 μ J,
It is preferred that the pulse energy in the range of 20 μ J to 40 μ J.Less than 20 psecs time range have been found as pulse length be
Favourable.
The Advantageous variants scheme of method is provided that basal structure is for substrate of glass and in back electrode thin layer and glass base
There is barrier thin layer between bottom, wherein, as follows come adjust laser beam and as follows implement laser beam with
Relative motion between substrate, i.e. remained with along line of cut in substrate by the barrier thin layer of laser effect.The stop is thin
Layer is for example configured with the silicon oxynitride layer less than 150 nanometer thickness.Shown by microscopical research, the barrier thin layer
Only slightly influenceed by laser pulse.The barrier thin layer influenceed by laser beam remained is in the region of insulated trench
Ordinary loss is insufficient the 10% of its thickness degree, preferably only less than 5%.
Formed when absorbing lamella structure for ternary or quaternary semiconductor, such as by CIGS semiconductors or CIS semiconductors
When, preferably using this be used for manufacture sub- solar energy module method.
For manufacture method advantageously, substrate is configured with the first seamed edge length and the second seamed edge length rectangularly, on
Seamed edge and lower seamed edge, wherein, parallel to upper seamed edge and parallel to lower seamed edge, with the 10% of the first or second seamed edge length to
15% amount produces the first and second insulated trench at interval.Preferably, the thin-layer solar cell of interconnected in series is from base
The region of the upper seamed edge at bottom extends to the region of lower seamed edge.Here, insulated trench interconnects the thin layer sun perpendicular to for integral type
Can battery structuring ditch trough extend and for example cut off all sheet cells until with the first seamed edge length parallel and adjacent to
The thin-layer solar cell of ground arrangement, the thin-layer solar cell are taken as towards the in parallel of the direction connection of the second seamed edge length
First contact battery of sub- solar energy module.In addition, the thin-film solar electricity with the second parallel and adjacent arrangement of seamed edge length
Pond is taken as the second of closing to contact battery, and insulated trench does not cut off the second contact battery yet, but before it
Terminate.But equally thinkable is whole thin-layer solar cell is electrically insulated from each other using insulated trench.Then, so
The electrical interconnection of obtained sub- solar energy module can be realized by mixed structure mode.
Be provided that for preferably the first flexible program of method, parallel to the first and second isolation trench troughs first with
An other insulated trench is medially produced between second insulated trench.
The second favourable flexible program of method is provided that, parallel to the first and second isolation trench troughs first and the
Two other insulated trench are produced between two insulated trench as follows, i.e. so that two other insulated trench it
Between spacing and the first and second insulated trench and each adjacent other insulated trench between spacing size it is identical.
Equally applicable for all advantageous approach described above, insulated trench is preferably by multiple adjacent cuttings
The parallel arranged superposed of line is formed.Here, three lines of cut can be for example produced with 25 μm to 30 μm of spacing, so as to shape
Into with the insulated trench that line width is 75 μm to 100 μm.Such insulated trench causes the thin-film solar electricity of submodule
Sufficiently strong electric insulation between pond.
In addition, the present invention relates to also it is a kind of be used for manufacture with sub- solar energy module thin-layer solar module method,
The thin-layer solar module is built by integral type thin-layer solar cell interconnected amongst one another, and sub- solar energy module passes through electric insulation
Insulated trench be separated from each other.This method has steps of：
- substrate with the first side and the second side is provided, wherein, the first side of substrate has the thin of multiple integral type interconnection
Layer solar cell, back electrode thin layer of the thin-layer solar cell by metal, the absorption that is arranged on the back electrode thin layer of metal
Thin layer is built with the preceding electrode structure on absorption thin layer is arranged in,
- one in above method flexible program manufactures at least one insulated trench,
- utilize front side potted element to encapsulate the thin-film solar electricity that integral type interconnects in a manner of persistently weatherproof
Pond and
- lasting weatherproof electric solar energy module coupling arrangement is plugged into substrate.
Brief description of the drawings
Two realities of the arrangement for insulated trench on thin-layer solar module are illustrated with reference to following accompanying drawing
Apply example.Wherein：
Fig. 1 shows the pure schematic of the first embodiment of the thin-layer solar module with three horizontal insulated trench
Diagram；
Fig. 2 shows the pure schematic of the second embodiment of the thin-layer solar module with four horizontal insulated trench
Diagram；
Fig. 3 is showing along line III-III through schematical out-of-proportion sectional view of Fig. 1 solar energy module；
Fig. 4 is showing along line IV-IV through schematical out-of-proportion sectional view of Fig. 2 solar energy module；
Fig. 5 shows schematical out-of-proportion sectional view as in figure 4, wherein, it is supplemented with front side potted element
With solar energy module coupling arrangement.
Embodiment
Fig. 1 shows the first embodiment of the thin-layer solar module with three horizontal insulated trench I1, I2, I3
Purely schematic diagram.The thin-layer solar cell of unshowned integral type interconnection is arranged in the substrate 1 of rectangular in configuration.Base
Bottom 1 has narrow upper seamed edge, narrow lower seamed edge and two long longitudinal edges.Thin-layer solar cell is as elongate strips from the sun
The region of the narrow upper seamed edge of energy module extends perpendicularly to the region of the parallel narrow lower seamed edge of solar energy module.First is exhausted
Edge groove I1, should be at intervals of the pact of the size of long longitudinal edge with the following spaced and parallel narrow upper seamed edge in solar energy module
5% to 10%.Second insulated trench I2 is equally with about 5% to 10% spacing and thin-film solar of the size of long longitudinal edge
The narrow lower seamed edge of module is arranged at interval.3rd insulated trench I3 is parallel to other two insulated trench I1, I2 at it
Between medially extend.Here, each in three insulated trench I1, I2, I3 cuts off all thin-layer solar cells
Until two outermost thin-layer solar cells being disposed adjacent to respectively with two long longitudinal edges of substrate 1.It is outermost
Two thin-layer solar cells serve as so-called contact battery, they realize by insulated trench formed sub- solar energy mould
The interconnected in parallel of block.Sub- solar energy module is located between the outer seamed edge of substrate 1 and adjacent insulated trench I1, I2 and isolation trench
Between groove I1 and I3 and between insulated trench I2 and I3, this little solar energy module via two outer contact batteries each other
Interconnected in parallel.Typically at least one centimetre of the circular edge of thin-layer solar module goes to coated areas
(Randentschichtung) equally also it is not shown herein.
Fig. 2 shows that second of the thin-layer solar module with four horizontal insulated trench I1, I2, I3, I4 implements
The purely schematic diagram of mode.In addition, the seamed edge size of substrate 1 is consistent with the size in Fig. 1.Fig. 1 every other implementation
Scheme is also correspondingly applicable herein.Unlike first embodiment, two other insulated trench I3, I4 are equally spaced from each other
And it is arranged equally spaced with two insulated trench I1, I2 of outer arrangement.
In unique manufacturing step, come to produce all insulated trench I1, I2, I3, I4 along line of cut S by laser.
Therefore, discuss other embodiments in combination with sectional view as shown below.
Fig. 3 shows schematical out-of-proportion sectional view along line III-III through Fig. 1 solar energy module.
Here, striping has bridged solar energy module section up to outer seamed edge or has bridged thin layer stacked group in the region of built-in submodule
In same shape construction.Sectional view shows being constructed as below for the substrate 1 under most.It is that stop is thin on the base 1
Layer 1a, it is for example formed by silicon oxynitride on the glass substrate.It is the back electrode thin layer of metal successively on barrier thin layer 1a
2nd, it is to absorb thin layer 3 and preceding electrode structure 4 on the back electrode thin layer of metal.The preceding electrode structure 4 passes through by transparent conduction
Oxide and Electrical bus structure 41 form preceding electrode thin layer 40 build.Electrical bus structure can be with the thin layer that includes
Differently it is fabricated to the layer with the thickness in the range of a few micrometers.
If laser beam L is passed through along the line of cut S to stretch out from figure plane from dorsal part and penetrated for laser now
Sufficiently transparent substrate 1 is directed at back electrode film 2 together with its same sufficiently transparent barrier thin layer 1a for beam L, will occur
Following situations.If the laser pulse of the laser beam L in the range of psec or femtosecond has suitable pulse energy and appropriate
Width spatially, and suitably select the relative motion between substrate 1 and laser beam L, then barrier thin layer 1a is only
Slightly it is damaged, and remaining stacking group is ablated off completely.In this way it is possible to one is realized with seldom job step
The thin-layer solar cell of formula interconnection is structured into the submodule of multiple interconnection that are connected in parallel to each other.
Fig. 4 is showing along line IV-IV through schematical out-of-proportion sectional view of Fig. 2 solar energy module.Layer knot
The identical element of structure is provided with identical reference.Foregoing embodiment is also correspondingly applicable herein.
Finally, Fig. 5 is illustrated that with schematical out-of-proportion sectional view, such as in other manufacturing step, root
Supplied according to the sub-modular structure shown in Fig. 4 by the front side potted element 5 and solar energy module coupling arrangement 6 applied to be lasting
The solar energy module of weatherproof encapsulation.
Reference numerals list
1 substrate
1a barrier thin layers
2 back electrode thin layers
3 absorb thin layer
Electrode structure before 4
Electrode thin layer before 40
41 Electrical bus structures
5 front side potted elements
6 solar energy module coupling arrangements
I1, I2, I3, I4 insulated trench
L laser beams
S is used for the line of cut of insulated trench
Claims (14)
1. a kind of method for being used to manufacture sub- solar energy module in thin-layer solar module by the insulated trench being electrically insulated, institute
Thin-layer solar module is stated by integral type thin-layer solar cell interconnected amongst one another to build, methods described has steps of：
- laser with optical maser wavelength is provided,
- substrate (1) with the first side and the second side is provided, the substrate be for the optical maser wavelength it is transparent, its
In, the first side of the substrate (1) has a thin-layer solar cell of multiple integral types interconnection, the thin-layer solar cell by
The back electrode thin layer (2) of metal, the absorption thin layer (3) being arranged on the back electrode thin layer (2) of the metal and it is arranged in described
The preceding electrode structure (4) on thin layer is absorbed to build,
- laser beam (L) is injected into the substrate,
- laser beam (L) is moved along at least one line of cut (S) in the substrate (1) and/or make the substrate
(1) relative to the laser beam (L) move, to by the relative motion between laser beam (L) and substrate (1) produce to
A few insulated trench (I1, I2, I3, I4),
Characterized in that,
The laser beam (L) is injected on the second side of the substrate (1), falls on the metal through the substrate (1)
Back electrode thin layer (2) on, and the laser beam is adjusted as follows with the laser pulse in the range of psec or femtosecond
Save and the relative motion between the laser beam (L) and substrate (1) is implemented as follows, i.e. together with the metal
Back electrode thin layer (2) by the absorption thin layer (3) on the back electrode thin layer for being arranged in the metal and is arranged in the absorption together
Preceding electrode structure (4) on thin layer is ablated off along the line of cut (S) from the substrate (1).
2. the method according to claim 1 for manufacturing sub- solar energy module, it is characterised in that the optical maser wavelength exists
Selected close in infra-red range or in the spectral range of visible ray.
3. the method according to claim 1 or 2 for manufacturing sub- solar energy module, it is characterised in that using has
The pulse type laser of pulse frequency in the range of 33.3kHz to 400kHz.
4. the method according to claim 3 for manufacturing sub- solar energy module, it is characterised in that the laser beam
(L) passive movement, so that it is guaranteed that the 10% to 95% of the laser pulse followed in succession along the line of cut (S) spatially weighs
It is folded.
5. the method according to claim 3 for manufacturing sub- solar energy module, it is characterised in that the arteries and veins per laser pulse
Energy is rushed in the range of 5 μ J to 125 μ J to select.
6. the method according to claim 1 or 2 for manufacturing sub- solar energy module, it is characterised in that the substrate (1)
It is configured to substrate of glass and there is barrier thin layer (1a) between substrate of glass in back electrode thin layer (2), wherein, the laser
Beam (L) is adjusted as follows and the relative motion between the laser beam (L) and substrate (1) is real as follows
Apply, i.e. retain on the substrate by the barrier thin layer (1a) of laser effect along the line of cut (S).
7. the method according to claim 1 or 2 for manufacturing sub- solar energy module, it is characterised in that the absorption is thin
Layer (3) is configured to ternary or quaternary semiconductor.
8. the method according to claim 1 or 2 for manufacturing sub- solar energy module, it is characterised in that the substrate (1)
The first seamed edge length and the second seamed edge length, upper seamed edge and lower seamed edge are configured with rectangularly, wherein, parallel to the upper seamed edge
With parallel to the lower seamed edge, with 10% to 15% amount interval of the first seamed edge length or the second seamed edge length
Turn up the soil and produce the first insulated trench (I1) and the second insulated trench (I2).
9. the method according to claim 8 for manufacturing sub- solar energy module, it is characterised in that parallel to described first
Insulated trench and the second insulated trench (I1, I2) first insulated trench and second insulated trench (I1, I2) it
Between medially produce an other insulated trench (I3).
10. the method according to claim 8 for manufacturing sub- solar energy module, it is characterised in that parallel to described
One insulated trench and the second insulated trench (I1, I2) in first insulated trench and second insulated trench (I1, I2)
Between produce two other insulated trench (I3, I4) as follows, i.e. so that described two other insulated trench
Spacing between (I3, I4) and first insulated trench and second insulated trench (I1, I2) are relatively each adjacent another
Spacing size between outer insulated trench is identical.
11. the method according to claim 1 or 2 for manufacturing sub- solar energy module, it is characterised in that insulated trench
(I1, I2, I3, I4) is formed by the parallel arranged superposed of multiple adjacent lines of cut (S).
12. the method according to claim 4 for manufacturing sub- solar energy module, it is characterised in that the laser beam
(L) passive movement, so that it is guaranteed that the 15% to 30% of the laser pulse followed in succession along the line of cut (S) spatially weighs
It is folded.
13. the method according to claim 5 for manufacturing sub- solar energy module, it is characterised in that per laser pulse
Pulse energy selects in the range of 20 μ J to 40 μ J.
14. a kind of method for being used to manufacture the thin-layer solar module with sub- solar energy module, the thin-layer solar module
Built by integral type thin-layer solar cell interconnected amongst one another, the sub- solar energy module by the insulated trench of electric insulation that
This is separated, and methods described has steps of：
- substrate with the first side and the second side is provided, wherein, the first side of the substrate has the thin of multiple integral type interconnection
Layer solar cell, the thin-layer solar cell by metal back electrode thin layer, be arranged in the back electrode thin layer of the metal
On absorption thin layer and the preceding electrode structure that is arranged on the absorption thin layer build,
- at least one insulated trench is manufactured according to any one of the claims,
- utilize front side potted element to encapsulate the thin-layer solar cell that integral type interconnects in a manner of persistently weatherproof,
And
- lasting weatherproof electric solar energy module coupling arrangement is plugged on the substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013109478.3A DE102013109478A1 (en) | 2013-08-30 | 2013-08-30 | Method for producing sub-solar modules by electrically insulating isolation trenches in a thin-film solar module and method for producing a thin-film solar module with such isolation trenches |
| DE102013109478.3 | 2013-08-30 | ||
| PCT/DE2014/100308 WO2015027996A1 (en) | 2013-08-30 | 2014-08-28 | Method for producing sub-solar modules using electrically insulating insulation trenches in a thin-layer solar module, and method for producing a thin-layer solar module with such insulation trenches |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105917473A CN105917473A (en) | 2016-08-31 |
| CN105917473B true CN105917473B (en) | 2018-03-02 |
Family
ID=51798947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480048042.0A Active CN105917473B (en) | 2013-08-30 | 2014-08-28 | The method of sub- solar energy module is manufactured in thin-layer solar module for the insulated trench by electric insulation and there is the method for the thin-layer solar module of such insulated trench for manufacture |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP3039725A1 (en) |
| CN (1) | CN105917473B (en) |
| DE (1) | DE102013109478A1 (en) |
| WO (1) | WO2015027996A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015115030A1 (en) * | 2015-09-08 | 2017-03-09 | Von Ardenne Gmbh | Method for removing a layer from a substrate and its use |
| CN205336179U (en) * | 2016-01-13 | 2016-06-22 | 北京铂阳顶荣光伏科技有限公司 | Portable solar charger |
| DE102019006095A1 (en) * | 2019-08-29 | 2021-03-04 | Azur Space Solar Power Gmbh | Isolation method for the isolation of a semiconductor wafer comprising several solar cell stacks |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4315096A (en) | 1980-07-25 | 1982-02-09 | Eastman Kodak Company | Integrated array of photovoltaic cells having minimized shorting losses |
| US4667058A (en) | 1985-07-01 | 1987-05-19 | Solarex Corporation | Method of fabricating electrically isolated photovoltaic modules arrayed on a substrate and product obtained thereby |
| US7855089B2 (en) * | 2008-09-10 | 2010-12-21 | Stion Corporation | Application specific solar cell and method for manufacture using thin film photovoltaic materials |
| DE102009056572B4 (en) * | 2009-12-01 | 2014-10-23 | Manz Automation Ag | Method for at least partially removing a layer of a layer stack |
| JP2011129631A (en) * | 2009-12-16 | 2011-06-30 | Showa Shell Sekiyu Kk | Method of manufacturing cis thin film solar cell |
| JP2012114398A (en) * | 2010-11-05 | 2012-06-14 | Kataoka Seisakusho:Kk | Method of manufacturing thin film solar cell, laser material processing machine, apparatus of manufacturing thin film solar cell |
| DE102011017807A1 (en) * | 2011-04-29 | 2012-10-31 | Trumpf Laser- Und Systemtechnik Gmbh | Method of laser-induced removal of thin film stack layer portions, involves adjusting pulse and feed rates of laser beam introduced in absorber layer so that to-be-removed portion of adjacent layer is removed continuously |
-
2013
- 2013-08-30 DE DE102013109478.3A patent/DE102013109478A1/en not_active Withdrawn
-
2014
- 2014-08-28 EP EP14789777.1A patent/EP3039725A1/en not_active Withdrawn
- 2014-08-28 WO PCT/DE2014/100308 patent/WO2015027996A1/en active Application Filing
- 2014-08-28 CN CN201480048042.0A patent/CN105917473B/en active Active
Non-Patent Citations (1)
| Title |
|---|
| Optimization of picosecond laser structuring for the monolithic serial interconnection of CIS solar cells;Gerhard Heise et al.;《PROGRESS IN PHOTOVOLTAICS:RESERCH AND APPLICATIONS》;20120123;681-692 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105917473A (en) | 2016-08-31 |
| EP3039725A1 (en) | 2016-07-06 |
| DE102013109478A1 (en) | 2015-03-05 |
| WO2015027996A1 (en) | 2015-03-05 |
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