CN105914178B - The production method of fleet plough groove isolation structure - Google Patents
The production method of fleet plough groove isolation structure Download PDFInfo
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- CN105914178B CN105914178B CN201610307225.0A CN201610307225A CN105914178B CN 105914178 B CN105914178 B CN 105914178B CN 201610307225 A CN201610307225 A CN 201610307225A CN 105914178 B CN105914178 B CN 105914178B
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- isolation structure
- production method
- fleet plough
- plough groove
- groove isolation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
The invention discloses a kind of production methods of fleet plough groove isolation structure, comprising steps of being sequentially depositing oxide layer and mask layer on substrate；An opening is formed, is located at least in the mask layer；Side wall is formed on the side wall of the opening；Using the side wall and mask layer as exposure mask, the substrate is performed etching, forms a groove in the substrate；Remove the side wall；And the fill insulant in the opening and groove, form fleet plough groove isolation structure.The present invention can change the shape of fleet plough groove isolation structure in subsequent etching processes by forming the side wall, and the gutter for reducing or eliminating shallow channel isolation area and active-surface improves the performance of device to can be reduced Inverse-Narrow-Width-Effect.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit method of manufacturing technology, more particularly to the system of fleet plough groove isolation structure
Make method.
Background technique
In field of semiconductor manufacture, with the development that semiconductor devices is integrated and minimizes, isolation of semiconductor devices every
Size from structure also reduces therewith.Therefore, shallow trench isolation (Shallow Trench Isolation, STI) structure at present
CMOS complementary metal-oxide-semiconductor (Complementary Metal-Oxide- as deep sub-micron era
Semiconductor, CMOS) device manufacture mainstream isolation technology.
Fleet plough groove isolation structure is traditional the specific process is as follows: providing one with reference to Fig. 1 as a kind of device separation
Substrate 101 is sequentially formed pad oxide skin(coating) 102, silicon nitride layer 103 and photoresist layer 104 on its surface；With reference to figure
2, opening A, the isolation structure pair that the opening A has and defines active area are formed after exposure development in photoresist layer 104
The shape answered；With reference to Fig. 3, using having the photoresist layer 104 of opening A (as shown in Figure 1) as mask, etching, which is formed, runs through institute
Silicon nitride layer 103 and pad oxide skin(coating) 102 are stated until the isolated groove B in the substrate 101, removes photoresist layer 104, finally
Deposited oxide silicon materials in isolated groove B in Fig. 3, the silica material fill full isolated groove B and cover isolating trenches
The silicon nitride layer 103 of the two sides slot B removes silica material extra on silicon nitride layer 103 by CMP process, and subsequent
Technique in, also involve removal silicon nitride layer 103 and the step of removal pad oxide skin(coating) 102, ultimately form shallow trench isolation knot
Structure C, as shown in Figure 4.
The silica that will cause in fleet plough groove isolation structure C in the manufacturing process of above-mentioned traditional sti structure is recessed, is formed
To the shape of lower recess, referred to as gutter (divot) 105, as shown in figure 4, fringe field can be generated at gutter 105.With partly leading
The size of body device is smaller and smaller, and the width of device active region will be more and more shallow, along with occurring in the manufacture of traditional sti structure
Gutter, can thus cause threshold voltage decreasing, thus occur device creepage increase Inverse-Narrow-Width-Effect
(Inverse Narrow Width Effect, INWE), this effect can generate very serious shadow to the characteristic of device and circuit
It rings.
Therefore, in view of the above technical problems, it is necessary to which the production method of new fleet plough groove isolation structure is provided.
Summary of the invention
The technical problem to be solved by the present invention is to reduce in fleet plough groove isolation structure because of narrow channel reversed caused by gutter
Effect improves the performance of device.
In order to solve the above technical problems, the production method of fleet plough groove isolation structure provided by the invention, includes the following steps:
It is sequentially depositing oxide layer and mask layer on substrate；
An opening is formed, is located at least in the mask layer；
Side wall is formed on the side wall of the opening；
Using the side wall and mask layer as exposure mask, the substrate is performed etching, forms a groove in the substrate；
Remove the side wall；And
The fill insulant in the opening and groove, forms fleet plough groove isolation structure.
Optionally, the opening is located in the oxide layer.
Optionally, the opening is located in the mask layer and oxide layer.
Optionally, a floating gate layer is formed between the oxide layer and mask layer, the opening is also located at described floating
It sets in grid layer.
It further, include: to form a sacrificial layer in the step of forming side wall on the side wall of the opening；Etching is formed
The side wall.
Further, an annealing process is carried out to the sacrificial layer, preferably, carrying out the lehr attendant in a nitrogen environment
Skill.
Further, the material of the sacrificial layer is oxide, preferably, the sacrificial layer is ethyl orthosilicate
(Tetraethyl Orthosilicate, TEOS) occurs chemical reaction deposit with oxygen and obtains.
Further, the sacrificial layer is etched to form the side wall by self-registered technology.
Further, the side wall is removed using wet-etching technology.
Further, it in the opening and groove after fill insulant, is carried out using chemically mechanical polishing flat
Change step to eventually stop on the mask layer, finally, removing the mask layer to form final fleet plough groove isolation structure.
Compared with prior art, the invention has the following advantages:
The present invention can reduce or eliminate shallow channel isolation area and active area by forming the side wall production sti structure
The gutter (divot) at edge improves the threshold voltage in semiconductor devices at isolated area and active-surface, reduces edge device
The electric leakage of part improves the performance of device so as to reduce the Inverse-Narrow-Width-Effect of fleet plough groove isolation structure.
Detailed description of the invention
Fig. 1 to Fig. 4 is the corresponding structural schematic diagram of step each in the production method of conventional shallow trench isolation structure；
Fig. 5 is the flow chart of the production method of fleet plough groove isolation structure in one embodiment of the invention；
Fig. 6 to Figure 13 is the corresponding structure of each step in the production method of fleet plough groove isolation structure in one embodiment of the invention
Schematic diagram.
Figure 14 to Figure 15 is that corresponding steps are corresponding in the production method of fleet plough groove isolation structure in another embodiment of the present invention
Structural schematic diagram.
Specific embodiment
The production method of fleet plough groove isolation structure of the present invention is carried out below in conjunction with flow chart and schematic diagram more detailed
Description, which show the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can modify described herein
Invention, and still realize advantageous effects of the invention.Therefore, following description should be understood as those skilled in the art's
It is widely known, and it is not intended as limitation of the present invention.
The present invention is more specifically described by way of example referring to attached drawing in the following passage.It is wanted according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Core of the invention thought is that the present invention provides a kind of production method of fleet plough groove isolation structure, such as Fig. 5 institute
Show, includes the following steps:
S1, it is sequentially depositing oxide layer and mask layer on substrate；
S2, an opening is formed, be located at least in the mask layer；
S3, side wall is formed on the side wall of the opening；
S4, using the side wall and mask layer as exposure mask, the substrate is performed etching, forms a ditch in the substrate
Slot；
S5, the removal side wall；And
S6, the fill insulant in the opening and groove, form fleet plough groove isolation structure.
The present invention can reduce or eliminate shallow channel isolation area and active area by forming the side wall production sti structure
The gutter (divot) at edge improves the threshold voltage in semiconductor devices at isolated area and active-surface, reduces edge device
The electric leakage of part improves the performance of device so as to reduce the Inverse-Narrow-Width-Effect of fleet plough groove isolation structure.
It is exemplified below the embodiment of the production method of the fleet plough groove isolation structure, clearly to illustrate the contents of the present invention,
It will be clear that the contents of the present invention are not restricted to following embodiment, other are normal by those of ordinary skill in the art's
The improvement of rule technological means is also within thought range of the invention.
Embodiment 1:
As shown in figure 5, firstly, step S1, is sequentially depositing oxide layer 202, mask layer 203 on the substrate 201, as schemed
Shown in 6, in embodiments of the present invention, the substrate 201 may include material below any or the material that can be used, or
Any material of device, circuit or epitaxial layer can be formed on it.In other alternative embodiments, the substrate 201 can be with
Semiconductor substrate including such as doped silicon, GaAs, gallium arsenide-phosphide, indium phosphide, germanium or silicon-Germanium substrate.For example, the lining
Bottom 201 may include such as SiO in addition to a semiconductor substrate portion2Or Si3N4The insulating layer of layer etc.Therefore, described
Substrate 201 is located at the multilayer element of interested layer or beneath portions for generally definition.Equally, the substrate 201 can be with
It is other cambial any substrates, such as glass or metal layer thereon.
Preferably, the mask layer 203 may include nitride, but in other embodiments, mask layer 203 can wrap
Other suitable materials are included, if its performance makes it as the stop-layer for being used for polishing step, so that it is for subsequent etching
(for example, side wall (as described below) wet etching) have corrosion stability, and its for Anisotropic substrate etching (for example, generate
The self-registered technology of side wall (as described below) etches) there is corrosion stability.
Step S2 is executed, an opening D is formed, is located at least in the mask layer 203.The opening D can pass through ability
Photoetching well known to the those of ordinary skill of domain and etch process are realized.For example, photoetching and etch process include following consecutive steps.
Firstly, by spin coating by photoresist be coated in the mask layer 203 on, for example, photoresist layer can have it is several
The thickness of micron, and can be any appropriate polymer (such as the polyethylene cinnamic acid by may be used as photoresist
Ester or polymer based on thermoplastic phenolic resin) it constitutes.Then, it is irradiated by UV light by the exposure mask applied described photic
Resist layer.After illumination, development of photoresist is caused photic anti-dependent on the type of used photoresist
Lose the part of irradiation (positive resist) of agent or the removal of irradiated portion (negative resist).Then using developed photic anti-
Erosion oxidant layer the mask layer 203 is performed etching as exposure mask, thereafter typically via use organic solvent removal photoresist
The remainder of oxidant layer, forms the opening D for running through the mask layer 203, i.e., the described opening D is located at the oxide layer 202
On, as shown in Figure 7.
Step S3 is executed, forms side wall on the side wall of the opening D.
Firstly, a sacrificial layer 204 is formed in the opening D, as shown in figure 8, for example, the material of the sacrificial layer 204
Can be oxide, it is common as TEOS and oxygen generation chemical reaction deposit are obtained, preferably, to the sacrificial layer 204 into
Annealing process under one nitrogen environment of row keeps the material compactness of the sacrificial layer 204 more preferable, in other embodiments, annealing
Environment can be other inert gases.
Then the side wall with the sacrificial layer 204 is formed in the opening D, as shown in figure 9, the side wall can lead to
Self-registered technology etching known to a person of ordinary skill in the art is crossed to realize, therefore not to repeat here.
Step S4 is executed, is exposure mask with the side wall and mask layer 203, the substrate 201 is performed etching, formation runs through
The oxide layer 202 is until the groove E in the substrate 201 as shown in Figure 10 can be common by this field in the step
Photoetching technique well known to technical staff realizes that therefore not to repeat here.
Step S5 is executed, the side wall is removed, the side wall is removed using wet-etching technology, in actual operation,
While etching the side wall, the part of the oxide layer 202 below the side wall and whole can be also etched away, such as
Shown in Figure 11.
Step S6 is executed, the fill insulant 205 in the opening D and groove E is as shown in figure 12, common to insulate
Material is silica.However in other description, insulating materials 205 is referred to as silicon dioxide layer 205, it should be appreciated that
It is that this is only for ease of understanding, and not in order to limit.Next, being planarized to the silicon dioxide layer 205, example
Such as, this is by such as chemically-mechanicapolish polishing (Chemical Mechanical for known to a person of ordinary skill in the art
Polishing, CMP) etc polishing process realize, remove the extra silica on the pad silicon nitride layer 203
Layer 205, finally, the mask layer 203 and the oxide layer 202 are removed, for example, removing the silicon nitride layer using phosphoric acid cleaning
203, remove the oxide layer 202 using hydrofluoric acid wet etching, these methods be all it is known to a person of ordinary skill in the art,
Therefore not to repeat here, ultimately forms fleet plough groove isolation structure F, as shown in figure 13.
The fleet plough groove isolation structure F made in the embodiment of the present invention 1 compares traditional sti structure C, and gutter 105 is not present.
Embodiment 2:
Please refer to Figure 14-Figure 15, wherein in Figure 14-Figure 15, reference label indicate it is identical with Fig. 6-Figure 13 statement and
The identical structure of first embodiment.The production method of the second embodiment and the production method of the first embodiment are basic
Identical, difference is: in step s 2, as shown in figure 14, forming opening a G, the opening G and is located at the mask layer 203
In oxide layer 202.Correspondingly, in step s3, the side wall formed on the side wall of the opening G, as shown in figure 15.
Then, it executes in succession with step S4, S5 and S6 in the first embodiment, the embodiment of the present invention 2 finally makes
Fleet plough groove isolation structure it is identical as the fleet plough groove isolation structure in embodiment 1, compared to traditional sti structure C, will not exist
Gutter 105.
In addition, above-mentioned production method further includes described when above-mentioned fleet plough groove isolation structure is applied in flush memory device
A floating gate layer for preparing memory, the dielectric material of the floating gate layer are formed between oxide layer 202 and mask layer 203
For polysilicon or silicon nitride or conductive nano crystal material, the opening formed in above-mentioned production method is also located at
In the floating gate layer.
To sum up, in the production method of fleet plough groove isolation structure of the present invention by formed the side wall can change it is subsequent
The shape of sti structure in etching technics, can reduce or eliminate the gutter of shallow channel isolation area and active-surface
(divot), the threshold voltage in semiconductor devices at isolated area and active-surface is improved, the electric leakage of edge device is reduced,
So as to reduce the Inverse-Narrow-Width-Effect of fleet plough groove isolation structure, the performance of device is improved.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (12)
1. the production method of fleet plough groove isolation structure, which comprises the steps of:
It is sequentially depositing oxide layer and mask layer on substrate；
An opening is formed, is located at least in the mask layer；
A sacrificial layer is formed in said opening, is etched the sacrificial layer and is formed side wall in said opening；
Using the side wall and mask layer as exposure mask, the substrate is performed etching, forms a groove in the substrate；
Remove the side wall；And
The fill insulant in the opening and groove, forms fleet plough groove isolation structure.
2. the production method of fleet plough groove isolation structure as described in claim 1, which is characterized in that the opening is formed in described
In oxide layer.
3. the production method of fleet plough groove isolation structure as described in claim 1, which is characterized in that the opening is located at described cover
In film layer and oxide layer.
4. the production method of the fleet plough groove isolation structure as described in any one of claims 1 to 3, which is characterized in that described
Production method further include:
A floating gate layer is formed between the oxide layer and mask layer；
The opening is also located in the floating gate layer.
5. the production method of fleet plough groove isolation structure as described in claim 1, which is characterized in that the production method further includes
One annealing process is carried out to the sacrificial layer.
6. the production method of fleet plough groove isolation structure as claimed in claim 5, which is characterized in that carry out institute in a nitrogen environment
State annealing process.
7. the production method of fleet plough groove isolation structure as described in claim 1, which is characterized in that the material of the sacrificial layer is
Oxide.
8. the production method of fleet plough groove isolation structure as claimed in claim 7, which is characterized in that the material of the sacrificial layer is
By ethyl orthosilicate and oxygen occur chemical reaction deposit come.
9. the production method of fleet plough groove isolation structure as described in claim 1, which is characterized in that etched by self-registered technology
The sacrificial layer is to form the side wall.
10. the production method of fleet plough groove isolation structure as described in claim 1, which is characterized in that use wet-etching technology
Remove the side wall.
11. the production method of fleet plough groove isolation structure as described in claim 1, which is characterized in that the production method is also wrapped
It includes: in the opening and groove after fill insulant, planarisation step being carried out using chemically mechanical polishing and is finally stopped
On the mask layer.
12. the production method of fleet plough groove isolation structure as claimed in claim 11, which is characterized in that the production method is also wrapped
It includes: after the planarisation step, removing the mask layer to form final fleet plough groove isolation structure.
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111192849B (en) * | 2018-11-14 | 2022-09-09 | 长鑫存储技术有限公司 | Method for forming semiconductor structure |
| CN111933568B (en) * | 2020-09-25 | 2021-02-09 | 晶芯成(北京)科技有限公司 | Manufacturing method of shallow trench isolation structure |
| CN113140500B (en) * | 2021-04-19 | 2023-08-22 | 上海积塔半导体有限公司 | Method for manufacturing semiconductor structure |
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| CN102263052A (en) * | 2010-05-24 | 2011-11-30 | 无锡华润上华半导体有限公司 | Forming method of STI (shallow trench isolation) |
| CN102468215A (en) * | 2010-11-19 | 2012-05-23 | 中国科学院微电子研究所 | Trench isolation structure and forming method thereof |
| CN102569166A (en) * | 2012-03-09 | 2012-07-11 | 上海宏力半导体制造有限公司 | Shallow groove isolation manufacturing method capable of improving stress and semiconductor device manufacturing method |
| CN102931125A (en) * | 2011-08-10 | 2013-02-13 | 无锡华润上华科技有限公司 | Semiconductor device and manufacturing method thereof |
| CN104425347A (en) * | 2013-09-09 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of shallow trench isolation |
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2016
- 2016-05-11 CN CN201610307225.0A patent/CN105914178B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263052A (en) * | 2010-05-24 | 2011-11-30 | 无锡华润上华半导体有限公司 | Forming method of STI (shallow trench isolation) |
| CN102468215A (en) * | 2010-11-19 | 2012-05-23 | 中国科学院微电子研究所 | Trench isolation structure and forming method thereof |
| CN102931125A (en) * | 2011-08-10 | 2013-02-13 | 无锡华润上华科技有限公司 | Semiconductor device and manufacturing method thereof |
| CN102569166A (en) * | 2012-03-09 | 2012-07-11 | 上海宏力半导体制造有限公司 | Shallow groove isolation manufacturing method capable of improving stress and semiconductor device manufacturing method |
| CN104425347A (en) * | 2013-09-09 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of shallow trench isolation |
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