CN105895769A - Light emitting device and method for manufacturing the same - Google Patents
Light emitting device and method for manufacturing the same Download PDFInfo
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- CN105895769A CN105895769A CN201610089250.6A CN201610089250A CN105895769A CN 105895769 A CN105895769 A CN 105895769A CN 201610089250 A CN201610089250 A CN 201610089250A CN 105895769 A CN105895769 A CN 105895769A
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- electrode
- light
- emitting device
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- epitaxial structure
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- 238000000034 method Methods 0.000 title claims description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 238000004020 luminiscence type Methods 0.000 claims description 93
- 238000004806 packaging method and process Methods 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 51
- 230000005611 electricity Effects 0.000 claims description 32
- 239000000084 colloidal system Substances 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 description 30
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 20
- 239000010408 film Substances 0.000 description 17
- 239000006071 cream Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000005538 encapsulation Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 230000009466 transformation Effects 0.000 description 7
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
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- 229910052759 nickel Inorganic materials 0.000 description 6
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- 239000010936 titanium Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
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- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a light-emitting device and a manufacturing method thereof. The circuit board includes a plurality of electrode pads. The light emitting unit includes a semiconductor epitaxial structure layer, a first electrode and a second electrode. The first electrode and the second electrode are respectively arranged on the same side of the semiconductor epitaxial structure layer. The first electrode and the second electrode are electrically connected with the electrode pads through the anisotropic conductive layer. The light-emitting device and the manufacturing method thereof provided by the invention are not easy to generate short circuit or electric leakage in the horizontal direction, and the yield is good.
Description
Technical field
The invention relates to a kind of light-emitting device and preparation method thereof.
Background technology
In the structure that existing flip-chip light-emitting diode encapsulates, the edge of semiconductor epitaxial structure layer can be cut
Neat in the edge of substrate or inside contract, and the edge of N electrode and P electrode can trim semiconductor epitaxial structure layer
Edge or be separated by a vertical dimension with the edge of semiconductor epitaxial structure layer, say, that N electrode
With P electrode frontal projected area on substrate less than semiconductor epitaxial structure layer frontal plane of projection on substrate
Long-pending, under such a configuration, when being intended to flip-chip light-emitting diode encapsulation is assembled to an external circuit, by
Relatively small with the electrode area of P electrode in N electrode, therefore LED package tends to have when assembling
Not accurate and electrode loose contact the problem of para-position produces.
It addition, the assemble method of existing flip-chip light-emitting diode is except can be by LED package group
It is filled to external circuit, it is also possible to light emitting diode epitaxy thin film is directly assembled to external circuit.General and
Speech, can be spliced directly to external circuit by LED package or light emitting diode epitaxy thin film, or
Person is to be bonded to external circuit by scolding tin.But, during scolding tin engages, scolding tin is because of heating
Produce mobility, and be easily caused the situation that the light-emitting device being completed is short-circuited in the horizontal direction.
Additionally, the light-emitting device being completed with existing juncture and grafting material is when carrying out following process,
Easily cause light-emitting device that electric leakage or the situation damaged occur because of stress produced by following process so that
Light-emitting device yield is low.
Summary of the invention
The present invention provides a kind of light-emitting device and preparation method thereof, be difficult to be short-circuited in the horizontal direction or
It is electric leakage, and its yield is good.
The present invention provides a kind of light-emitting device, and it is difficult to be short-circuited in the horizontal direction or leak electricity, and
Its yield is good.
The present invention provides the manufacture method of a kind of light-emitting device, and its light-emitting device made is difficult in level side
Upwards it is short-circuited or leaks electricity, and its yield is good.
A kind of light-emitting device of the present invention, conducts electricity including a circuit board, a luminescence unit and an anisotropy
Layer.Circuit board includes multiple electronic pads.Luminescence unit includes semiconductor epitaxial structure layer, one first electricity
Pole and one second electrode.First electrode and the second electrode are respectively arranged at semiconductor epitaxial structure layer
On the same side.First electrode and the second electrode are electrically connected with these electronic padses by anisotropy conductive layer.
In one embodiment of this invention, luminescence unit also includes a substrate.Semiconductor epitaxial structure layer is joined
It is placed on substrate, and the first electrode and the second electrode are configured at semiconductor epitaxial structure layer away from substrate
On side.
In one embodiment of this invention, light-emitting device also includes a photic zone.Luminescence unit is configured at
On photosphere, luminescence unit is configured between photic zone and the first electrode, and is configured at photic zone and the second electricity
Between pole.
In one embodiment of this invention, light-emitting device also includes a packaging body.Packaging light-emitting unit extremely
Few exposed portion the first electrode and partial second electrode.
In one embodiment of this invention, anisotropy conductive layer includes an insulation colloid and is scattered in insulation
Multiple electric conductors of colloid.
The manufacture method of a kind of light-emitting device of the present invention, including providing the circuit including multiple electronic pads
Plate.One luminescence unit is provided.Luminescence unit includes semiconductor epitaxial structure layer and is configured at quasiconductor
One first electrode on epitaxial structure layer and one second electrode.Circuit board is attached with an anisotropy conductive layer
With luminescence unit.Make the first electrode and second these electronic padses of electrode para-position.Anisotropy conductive layer is entered
Row one processes, and makes the first electrode and the second electrode be electrically connected with these electronic padses.
In one embodiment of this invention, process include to anisotropy conductive layer corresponding to the first electrode and
The part pressurization of the second electrode, makes anisotropy conductive layer corresponding to the first electrode and the part of the second electrode
It is respectively and electrically connected to the first electrode and the second electrode.
In one embodiment of this invention, process include to anisotropy conductive layer corresponding to the first electrode and
The part heating of the second electrode, makes anisotropy conductive layer corresponding to the first electrode and the part of the second electrode
It is respectively and electrically connected to the first electrode and the second electrode.
In one embodiment of this invention, luminescence unit also includes a substrate.Semiconductor epitaxial structure layer is joined
It is placed on substrate.The manufacture method of light-emitting device also includes making the first electrode and the second electrode and these electricity
After polar cushion is electrically connected with, remove substrate.
In one embodiment of this invention, the method removing substrate includes utilizing laser stripping method to remove substrate.
In one embodiment of this invention, anisotropy conductive layer includes an insulation colloid and is scattered in insulation
Multiple electric conductors of colloid.
A kind of light-emitting device of the present invention, including a circuit board, a luminescence unit, a photic zone, an envelope
Dress layer and an anisotropy conductive layer.Luminescence unit includes a substrate, a quasiconductor being configured on substrate
Epitaxial structure layer, and one first electrode and the second electrode, be respectively arranged at semiconductor epitaxial structure layer
On the same side.Luminescence unit is configured on photic zone and at least exposes to the open air the first electrode and the second electrode.Encapsulation
Body packaging light-emitting unit at least exposed portion the first electrode and partial second electrode, the first electrode and second
Electrode is respectively by stretching out on semiconductor epitaxial structure layer and being covered each by table in the part of at least packaging body
Face.First electrode and the second electrode are electrically connected with circuit board by anisotropy conductive layer.
In one embodiment of this invention, anisotropy conductive layer includes an insulation colloid and is scattered in insulation
Multiple electric conductors of colloid.
In one embodiment of this invention, the first electrode includes connecting the one first of semiconductor epitaxial structure layer
Electrode portion and one first electrode extension in the first electrode portion of connection, and the second electrode includes connecting and partly leads
One second electrode portion of body epitaxial structure layer and one second electrode extension in the second electrode portion of connection, the
One electrode extension and the second electrode extension stretch out respectively in the upper surface of at least part of packaging body.
In one embodiment of this invention, the first electrode extension and the second electrode extension trim in or interior
Shrink in the edge of the upper surface of packaging body.
In one embodiment of this invention, the first electrode portion trims in the second electrode portion or is recessed in and partly leads
The edge of body epitaxial structure layer.
In one embodiment of this invention, light-emitting device also includes one or more smooth surface, Mei Yiping
Smooth surface includes photic zone and packaging body.
In one embodiment of this invention, the first electrode extension includes multiple first gate-shaped electrode, and
Two electrode extension include multiple second gate-shaped electrode, and these the first palisade distribution of electrodes are in the first electrode portion
With on the portion of upper surface of packaging body, these the second palisade distribution of electrodes are at the second electrode portion and packaging body
On portion of upper surface.
In one embodiment of this invention, at least part of first electrode extension is by the edge in the first electrode portion
Extend toward the direction away from the second electrode portion, and at least part of second electrode extension is by the second electrode portion
Edge extends toward the direction away from the first electrode portion.
In one embodiment of this invention, the first electrode extension and the second electrode extension include many respectively
Individual sub-electrode separated from one another.
In one embodiment of this invention, these sub-electrodes of the first electrode extension are positioned at the upper of packaging body
Away from least one corner of the second electrode on surface, and these the second sub-electrode positions of the second electrode extension
Away from least one corner of the first electrode on the upper surface of packaging body.
In one embodiment of this invention, the first electrode extension, the end face of the second electrode extension and envelope
The upper surface substantially copline of dress body.
In one embodiment of this invention, the first electrode portion is that seamless is connected with the first electrode extension,
Second electrode portion is that seamless is connected with the second electrode extension.
In one embodiment of this invention, the first electrode extension and the second electrode extension include one respectively
Following layer and one is configured at the barrier layer between following layer and packaging body.
In one embodiment of this invention, the material of following layer include gold, stannum, aluminum, silver, copper, indium,
Bismuth, platinum, gold-tin alloy, sn-ag alloy, SAC (SAC alloy) or a combination thereof, and barrier layer
Material include nickel, titanium, gold or the alloy of a combination thereof.
In one embodiment of this invention, the first electrode and the second electrode the most also include a reflecting layer, point
It is not configured between these electrode extension and packaging bodies.
In one embodiment of this invention, the material in reflecting layer includes gold, aluminum, silver, nickel, titanium or its group
The alloy closed.
In one embodiment of this invention, light-emitting device also includes a reflecting layer, is configured at the table of packaging body
On face.
In one embodiment of this invention, at least part of reflecting layer is between these electrode and packaging bodies.
In one embodiment of this invention, the material in reflecting layer includes gold, aluminum, silver, nickel, titanium, Bradley
Lattice reflecting mirror (Distributed Bragg Reflector, be called for short DBR), reflection grain mixed with tool high reflectance
The resin bed of son or a combination thereof.
In one embodiment of this invention, light-emitting device also includes a material for transformation of wave length, and cladding is luminous single
Unit at least exposed portion the first electrode and partial second electrode.
In one embodiment of this invention, material for transformation of wave length includes fluorescent material or quanta point material.
In one embodiment of this invention, material for transformation of wave length is formed in the surface of luminescence unit, formation
On the surface of packaging body or be blended in packaging body.
In one embodiment of this invention, these first sub-electrodes and these second sub-electrodes be layered electrode,
Sphere pole or gate-shaped electrode.
One embodiment of the invention proposes a kind of light-emitting device, including a circuit board, a luminescence unit, one
Photic zone, an encapsulated layer and an anisotropy conductive layer.Luminescence unit includes a substrate, one is configured at base
Plate semiconductor-on-insulator epitaxial structure layer, and one first electrode and the second electrode, be respectively arranged at quasiconductor and build
Crystal structure layer and in contrast on the same side of substrate.Photic zone is configured on luminescence unit and is positioned at substrate
Side is in contrast to semiconductor epitaxial structure layer, the first electrode and the second electrode.Packaging body is positioned at luminescence unit
And between photic zone.Packaging body packaging light-emitting unit at least exposed portion the first electrode and part the second electricity
Pole.First electrode and the second electrode respectively by stretch out on semiconductor epitaxial structure layer and be covered each by
The portion of upper surface of few packaging body.First electrode and the second electrode are by anisotropy conductive layer and circuit board
It is electrically connected with.
One embodiment of the invention proposes a kind of light-emitting device, including a circuit board, luminous single a, envelope
Dress layer and anisotropy conductive layer.Luminescence unit includes that a substrate, a quasiconductor being configured on substrate are of heap of stone
Crystal structure layer, and one first electrode and one second electrode, be configured at the same of semiconductor epitaxial structure layer
On side.Packaging body packaging light-emitting unit at least exposed portion the first electrode and partial second electrode.First
Electrode and the second electrode are respectively by upwardly extending on semiconductor epitaxial structure layer and not covering on the one of packaging body
Surface.First electrode and the second electrode are electrically connected with circuit board by anisotropy conductive layer
One embodiment of the invention proposes a kind of light-emitting device, including a circuit board, luminescence unit, an envelope
Dress layer and an anisotropy conductive layer.Luminescence unit includes a substrate, a quasiconductor being configured on substrate
Epitaxial structure layer, and one first electrode and the second electrode, be respectively arranged at semiconductor epitaxial structure layer
On the same side.Packaging body packaging light-emitting unit at least exposed portion the first electrode and partial second electrode.
First electrode and the second electrode are respectively by stretching out on semiconductor epitaxial structure layer and being covered each by least sealing
The portion of upper surface of dress body.First electrode and the second electrode are electrical with circuit board by anisotropy conductive layer
Connect.
One embodiment of the invention proposes a kind of light-emitting device, including a circuit board, a luminescence unit, one
Photic zone, an encapsulated layer and anisotropy conductive layer.Luminescence unit includes a substrate, one is configured at substrate
On semiconductor epitaxial structure layer, and one first electrode and the second electrode, be respectively arranged at quasiconductor and build
On the same side of crystal structure layer.Luminescence unit is configured on photic zone and at least exposes the first electrode and second to the open air
Electrode.Packaging body packaging light-emitting unit at least exposed portion the first electrode and partial second electrode.First
Electrode and the second electrode are upwardly extended by semiconductor epitaxial structure layer respectively and do not cover table on the one of packaging body
Face.First electrode and the second electrode are electrically connected with circuit board by anisotropy conductive layer.
One embodiment of the invention proposes a kind of light-emitting device, including a circuit board, a luminescence unit, one
Photic zone, an encapsulated layer and an anisotropy conductive layer.Luminescence unit includes a substrate, one is configured at base
Semiconductor epitaxial structure layer on plate, and one first electrode and the second electrode, be respectively arranged at quasiconductor
Epitaxial structure layer and in contrast on the same side of substrate.Photic zone is configured on luminescence unit and is positioned at substrate
Side in contrast to semiconductor epitaxial structure layer, the first electrode and the second electrode.Packaging body is positioned at luminous single
Between unit and photic zone.Packaging body packaging light-emitting unit at least exposed portion the first electrode and part second
Electrode.First electrode and the second electrode are upwardly extended by semiconductor epitaxial structure layer respectively and do not cover encapsulation
One upper surface of body.First electrode and the second electrode are electrically connected with circuit board by anisotropy conductive layer.
Based on above-mentioned, owing to the first electrode of luminescence unit and second electrode of one embodiment of the invention are
Stretch out from semiconductor epitaxial structure layer and at least part of packing colloid can be covered, say, that phase
For design compared with existing first electrode and the second electrode, (light emitting diode seals the light-emitting device of the present invention
Dress) can have bigger electrode area, and when follow-up being assembled on an external circuit, it is possible to effectively carry
Para-position precision during high assembling.The first electrode and due to the luminescence unit of one embodiment of the invention
Two electrodes are to upwardly extend from semiconductor epitaxial structure layer and protrude from and encapsulate relatively body, after being thus advantageous to
Continuous die bond connection process.It addition, in the light-emitting device and preparation method thereof of the embodiment of the present invention, send out
First electrode of light unit and the second electrode are electrically connected with circuit board by anisotropy conductive layer.Therefore,
Light-emitting device is difficult to be short-circuited in the horizontal direction or leak electricity, and the yield of light-emitting device is good.
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and coordinate
Accompanying drawing is described in detail below.
Accompanying drawing explanation
Figure 1A is the schematic top plan view of a kind of light-emitting device of one embodiment of the invention；
Figure 1B is the generalized section of the line A-A along Figure 1A；
Fig. 2 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Fig. 2 B is the generalized section of the line B-B along Fig. 2 A；
Fig. 3 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Fig. 3 B is the generalized section of the line C-C along Fig. 3 A；
Fig. 4 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Fig. 4 B is the generalized section of the line D-D along Fig. 4 A；
Fig. 5 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Fig. 5 B is the generalized section of the line E-E along Fig. 5 A；
Fig. 6 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Fig. 6 B is the generalized section of the line F-F along Fig. 6 A；
Fig. 7 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Fig. 7 B is the generalized section of the line G-G along Fig. 7 A；
Fig. 8 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Fig. 8 B is the generalized section of the line H-H along Fig. 8 A；
Fig. 9 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Fig. 9 B is the generalized section of the line I-I along Fig. 9 A；
Figure 10 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Figure 10 B is the generalized section of the line J-J along Figure 10 A；
Figure 11 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Figure 11 B is the generalized section of the line K-K along Figure 11 A；
Figure 12 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Figure 12 B is that the light-emitting device chip bonding of the line L-L along Figure 12 A is to circuit board section schematic diagram；
Figure 13 is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Figure 14 is the generalized section of a kind of light-emitting device of another embodiment of the present invention；
Figure 15 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Figure 15 B is the generalized section of the light-emitting device of the line M-M along Figure 15 A；
Figure 16 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Figure 16 B is the generalized section of the light-emitting device of the line N-N along Figure 16 A；
Figure 17 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention；
Figure 17 B is the generalized section of the light-emitting device of the line P-P along Figure 17 A；
Figure 18 A is light-emitting device chip bonding the cuing open to circuit board that one embodiment of the invention adopts Figure 1B
Face schematic diagram；
Figure 18 B is the partial enlarged drawing of region M1 in Figure 18 A；
Figure 18 C is that another embodiment of the present invention adopts the light-emitting device chip bonding of Figure 1B to circuit board
Generalized section.
Figure 19 A to 19D is the schematic diagram of the manufacturing process of the light-emitting device of one embodiment of the invention；
Figure 20 is the flow chart of steps of the manufacture method of the light-emitting device of one embodiment of the invention.
Description of reference numerals:
50,50a: circuit board；
52,52a: electronic pads；
60: tin cream；
100a、100b、100c、100d、100e、100f、100g、100h、100i、100j、100k、
100l, 100m, 100n, 100p, 100q, 100r: light-emitting device；
110: photic zone；
120a, 120b, 120c, 120d, 120e, 120f, 120g, 120h, 120i, 120j: luminous
Unit；
122,122a: substrate；
124,124a: epitaxial structure layer；
125: surface；
126a, 126b, 126c, 126d, 126e, 126f, 126g, 126h, 126i, 126p: first
Electrode；
126a1、126b1、126c1、126d1、126e1、126f1、126g1、126h1、126i1、
126j1: the first electrode portion；
126a2、126b2、126c2、126d2、126e2、126f2、126g2、126h2、126i2、
126j2,126l2,126m2,126p2: the first electrode extension；
126h3,126i3: the first connecting portion；
126j21,126j22,126l21～126l28,126m21,126m22,126m23,126q2,
126r2: the first sub-electrode；
126la, 126lb: the first sub-electrode group；
128a, 128b, 128c, 128d, 128e, 128f, 128g, 128h, 128i, 128p: second
Electrode；
128a1、128b1、128c1、128d1、128e1、128f1、128g1、128h1、128i1、
128j1: the second electrode portion；
128a2、128b2、128c2、128d2、128e2、128f2、128g2、128h2、128i2、
128j2,128l2,128m2,128p2: the second electrode extension；
128h3,128i3: the second connecting portion；
128j21,128j22,128l21～128l28,128m21,128m22,128m23,128q2,
128r2: the second sub-electrode；
128la, 128lb: the second sub-electrode group；
130a, 130d, 130f, 130h, 130i, 130j: packaging body；
132a, 132d, 132f, 132h, 132i: upper surface；
134a: material for transformation of wave length；
140n: reflecting layer；
150,150 ', 150 ": anisotropy conductive layer；
152,152 ', 152 ": insulation colloid；
154,154 ', 154 ": electric conductor；
200a, 200b: light-emitting device；
L1: following layer；
L2: barrier layer；
L3: reflecting layer；
LL: thunder laser beam；
M1: region；
R1, R1 ': the first gate-shaped electrode；
R2, R2 ': the second gate-shaped electrode；
S1, S1 ', S1 ", S1 " ': the first upper surface；
S2, S2 ', S2 ", S2 " ': the second upper surface；
The step of the manufacture method of S100, S200, S300, S400, S500: light-emitting device；
T1: the first end face；
T2: the second end face；
D: interval.
Detailed description of the invention
Figure 1A is the schematic top plan view of a kind of light-emitting device of one embodiment of the invention.Figure 1B is along figure
The generalized section of the line A-A of 1A.Please also refer to Figure 1A and Figure 1B, in the present embodiment, send out
Electro-optical device 100a it include photic zone 110, luminescence unit 120a and packaging body 130a.Send out
Light unit 120a e.g. one light emitting diode, including substrate 122, epitaxial structure layer 124,
First electrode 126a and one second electrode 128a.Epitaxial structure layer 124 is configured on substrate 122.?
In the present embodiment, epitaxial structure layer 124 is semiconductor epitaxial structure layer.Epitaxial structure layer 124 is around
Trim in substrate 122 around.First electrode 126a is configured on the side of epitaxial structure layer 124.The
Two electrode 128a are configured on epitaxial structure layer 124, and are arranged at epitaxial structure with the first electrode 126a
In contrast to the same side of substrate 122 on layer 124, wherein the first electrode 126a and the second electrode 128a it
Between there is an interval d.Luminescence unit 120a is configured on photic zone 110 and photic zone 110 is positioned at luminescence
The substrate 122 of unit 120a is in contrast to epitaxial structure layer the 124, first electrode 126a and the second electrode
The side of 128a, and at least expose part the first electrode 126a and partial second electrode 128a.Encapsulation
Body 130a is configured on photic zone 110, and between luminescence unit 120a and photic zone 110, its
Middle packaging body 130a packaging light-emitting unit 120a and expose at least part of first electrode 126a and part the
Two electrode 128a, and the first electrode 126a and the second electrode 128a by epitaxial structure layer 124 respectively to
Outer extension and cover the upper surface 132a of at least part of packaging body 130a.In more detail, epitaxial structure
Layer 124 at least includes that the first type semiconductor layer (not shown) being sequentially electrically connected with, luminescent layer (do not show
Go out) and Second-Type semiconductor layer (not shown), the first electrode 126a and the first type semiconductor layer electrically connect
Connect, and the second electrode 128a is electrically connected with Second-Type semiconductor layer.In the present embodiment, packaging body 130a
Edge trim the edge of photic zone 110 so that light-emitting device 100a is formed with the table that one or more is smooth
Face.
Specifically, the photic zone 110 of the present embodiment is suitable to guide the light that sent of luminescence unit 120a also
Allowing light penetrate, wherein the inorganic material of the material of photic zone 110 e.g. light-permeable, includes but not limited to
Glass or pottery；Or the organic material of light-permeable, include but not limited to silica gel, epoxy resin or various tree
Fat, and the light transmittance of photic zone 110 most preferably at least 50%.The kenel of photic zone 110 can be smooth
Light-passing board or the photic zone of other shapes.In other embodiments of the present invention, light-emitting device 100a is permissible
Do not include photic zone 110, and packaging body 130a is formed with the surface that one or more is smooth.Luminescence unit
120a is e.g. a crystal-coated light-emitting diodes chip, wherein the material of the substrate 122 of luminescence unit 120a
Matter e.g. sapphire, gallium nitride, gallium oxide, carborundum or zinc oxide, but be not limited thereto.Again
Person, the first electrode 126a of the present embodiment includes that one first electrode portion 126a1 and one first electrode extend
Portion 126a2.Second electrode 128a includes one second electrode portion 128a1 and one second electrode extension
128a2.The edge of the first electrode portion 126a1 and the second electrode portion 128a1 trims in or does not trim in (example
As being recessed in) edge of epitaxial structure layer 124.First electrode extension 126a2 is positioned at the first electrode portion
126a1 is upper and stretches out and covers the upper surface 132a of packaging body 130a.Second electrode extension 128a2
It is positioned on the second electrode portion 128a1 and stretches out and cover the upper surface 132a of packaging body 130a.Herein,
First electrode portion 126a1 and the first electrode extension 126a2 can use identical or different material, and second
Electrode portion 128a1 and the second electrode extension 128a2 can use identical or different material, at this and be not added with
To limit.In the present embodiment, the first electrode extension 126a2 respectively by the first electrode portion 126a1 to
Upper extension and the past direction away from the second electrode portion 128a1 extend, and the second electrode extension 128a2
Upwardly extended from the second electrode portion 128a1 respectively and extend toward the direction away from the first electrode portion 126a.
Additionally, the inorganic material of the material e.g. light-permeable of the packaging body 130a of the present embodiment or organic material
Material, wherein inorganic material includes but not limited to glass or pottery, organic material include but not limited to silica gel,
Epoxy resin or various resin.Light-emitting device 100a also includes at least one material for transformation of wave length, and wavelength turns
Conversion materials includes but not limited to fluorophor or quantum dot.Material for transformation of wave length 134a can be entrained in packaging body
In 130a, it is used for changing the wavelength of the light that luminescence unit 120a is sent.In other embodiments of the present invention,
Can also directly form wavelength conversion material layer on the surface of luminescence unit 120a, and at least expose part
First electrode 126a and partial second electrode 128a so that wavelength conversion material layer is positioned at packaging body 130a
And between luminescence unit 120a, the method for formation includes but not limited to spraying or attaches.And the present invention its
In his another embodiment, wavelength conversion material layer can also be formed at the surface of packaging body 130a, and at least
Expose part the first electrode 126a and partial second electrode 128a so that packaging body 130a is positioned at wavelength
Between transition material layer and luminescence unit 120a, the method for formation includes but not limited to spraying or attaches.When
So, in other embodiments, light-emitting device 100a can not include material for transformation of wave length, and this still falls within this
Invent adoptable technical scheme, the scope to be protected without departing from the present invention.
In short, be covered in envelope owing to the first electrode 126a and the second electrode 128a of the present embodiment have
The first electrode extension 126a2 and the second electrode extension 128a2 of the upper surface 132a of dress body 130a
Design, therefore for the design compared to existing first electrode and the second electrode, the luminescence of the present embodiment
Device 100a can have bigger electrode area.Additionally, ought follow-up be intended to be assembled to light-emitting device 100a
Time on one external circuit (not shown), the design of the first electrode 126a and the second electrode 128a also can carry
High light emitting diode is encapsulated into para-position precision when row assembles, and also can avoid existing electrode loose contact
Problem produce.Specifically, due to the first electrode extension 126a2 and the second electrode extension 128a2
Expanding the first electrode portion 126a1 and the area of the second electrode portion 128a1 respectively, light-emitting device is when using
When tin cream makes light-emitting device 100a engage with circuit board, tin cream overflow can be reduced or avoided and cause short circuit
Situation, can ensure that joint reliability.In addition.In certain embodiments, light-emitting device 100a can also adopt
To be electrically connected with external circuit with anisotropy conductive layer.For example, first electricity of light-emitting device 100a
Pole 126a and the second electrode 128a can be come with outside by anisotropic conductive or anisotropic conductive film
Circuit is electrically connected with.
It is noted that in this embodiment, the edge of the first electrode extension 126a2 and the second electricity
The edge of pole extension 128a2 trims in the edge of packaging body 130a and the edge of photic zone 110, removes
Electrode area becomes big, and outside increasing para-position precision, such design can be the easiest on processing procedure,
And then saving processing time, reason is that packaging body 130a can once encapsulate and multiple has the first electrode portion
126a1 and the luminescence unit 120a of the second electrode portion 128a1, plates the first electrode extension the most simultaneously
After 126a2 and the second electrode extension 128a2, more directly cut formation light-emitting device 100a.
Should be noted that at this, following embodiment continues to use element numbers and the partial content of previous embodiment,
Wherein use identical label to represent the identical or element of approximation, and eliminate constructed content
Explanation.Explanation about clipped refers to previous embodiment, and it is no longer repeated for following embodiment.
Fig. 2 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention.Fig. 2 B is edge
The generalized section of the line B-B of Fig. 2 A.Please also refer to Fig. 2 A and Fig. 2 B, the luminescence of the present embodiment
Light-emitting device 100a in device 100b to Figure 1A and Figure 1B is similar, is in place of the two Main Differences:
The first electrode extension 126b2 of the first electrode 126b of the present embodiment is by multiple first gate-shaped electrodes
R1 is formed, and the second electrode extension 128b2 of the second electrode 128b is by multiple second palisade electricity
Pole R2 is formed.Part the first gate-shaped electrode R1 and the second gate-shaped electrode R2 is respectively by the first electrode portion
126b1 and the second electrode portion 128b1 upwardly extends, part the first gate-shaped electrode R1 and the second gate-shaped electrode
R2 is configured on the upper surface 132a of packaging body 130a.
Wherein, the first gate-shaped electrode R1 is distributed in distance (the most equidistantly arrangement) and exposes part
First electrode portion 126b1 and partial encapsulation body 130a.Second gate-shaped electrode R2 is distributed in distance (example
The most equidistantly arrangement) and expose partial second electrode portion 128b1 and partial encapsulation body 130a.Special
Not, each first gate-shaped electrode R1 has an one first end face T1, and each second gate-shaped electrode R2
There is one second end face T2.The first end face T1's and the second gate-shaped electrode R2 of the first gate-shaped electrode R1
Second end face T2 substantially copline.Consequently, it is possible to light-emitting device 100b is assembled to outside one when follow-up
Time on portion's circuit (not shown), the first electrode 126b's and the second electrode 128b of luminescence unit 120b
Design can provide and preferably assemble flatness and bigger electrode area, is beneficial to light-emitting device 100b and enters
The assembling that row is follow-up.In certain embodiments, light-emitting device 100b can use anisotropy conductive layer come with
External circuit is electrically connected with.For example, the first electrode 126b and second electricity of light-emitting device 100b
Pole 128b can be electrically connected with external circuit by anisotropic conductive or anisotropic conductive film.
Fig. 3 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention.Fig. 3 B is edge
The generalized section of the line C-C of Fig. 3 A.Please also refer to Fig. 3 A and Fig. 3 B, the luminescence of the present embodiment
Light-emitting device 100b in device 100c and Fig. 2 A and Fig. 2 B is similar, is in place of the two Main Differences:
The first electrode extension 126c2 of the present embodiment is made up of multiple first gate-shaped electrode R1 ', and second
Electrode extension 128c2 is made up of multiple second gate-shaped electrode R2 ', wherein the first gate-shaped electrode R1 '
And the second gate-shaped electrode R2 ' also extends the interval being configured between the first electrode 126c and the second electrode 128c
At d.Consequently, it is possible to the electrode area of luminescence unit 120c can be extended to encapsulation by epitaxial structure layer 124
On body 130a, so that light-emitting device 100c can have bigger electrode area, processing procedure is simple, and helps
In the para-position precision improved in follow-up assembling, it should be noted that, gate-shaped electrode is connected to circuit board
Can realize with anisotropic conductive in actual application.For example, first electrode of light-emitting device 100c
126c and the second electrode 128c can be come and external electrical by anisotropic conductive or anisotropic conductive film
Road is electrically connected with.
Fig. 4 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention.Fig. 4 B is edge
The generalized section of the line D-D of Fig. 4 A.Please also refer to Fig. 4 A and Fig. 4 B, the luminescence of the present embodiment
Light-emitting device 100a in device 100d to Figure 1A and Figure 1B is similar, is in place of the two Main Differences:
The packaging body 130d of the present embodiment is also coated with the first electrode 126d, the second electrode 128d and exposes above-mentioned
The upper surface of electrode, and between packaging body 130d fills up between the first electrode 126d and the second electrode 128d
Every d, wherein the sidewall of the sidewall of the first electrode extension 126d2 and the second electrode extension 128d2 is also
Packed body 130d is coated with.Additionally, the edge of the first electrode extension 126d2 and the second electrode extend
The edge of portion 128d2 is recessed in the edge of packaging body 130d and the edge of photic zone 110.First electrode prolongs
One first upper surface S1 of extending portion 126d2, the one second upper surface S2 of the second electrode extension 128d2
Upper surface 132d substantially copline with packaging body 130d.It is to say, the first electrode extension 126d2
It is configured on the first electrode portion 126d1, and first upper surface S1 and the envelope of the first electrode extension 126d2
The upper surface 132d substantially copline of dress body 130d.Second electrode extension 128d2 is configured at second
On electrode portion 128d1, and the second upper surface S2 and packaging body 130d of the second electrode extension 128d2
Upper surface 132d substantially copline.Consequently, it is possible to when light-emitting device 100d and an external circuit (not
Illustrate) be electrically connected with time, the first electrode 126d of luminescence unit 120d and the design of the second electrode 128d,
Light-emitting device 100d can be made there is no assembly clearance (gap) when assembling, can effectively prevent aqueous vapor and oxygen
Enter in light-emitting device 100d.In certain embodiments, light-emitting device 100d can use anisotropy to lead
Electric layer to be electrically connected with external circuit.For example, the first electrode 126d of light-emitting device 100d with
And second electrode 128d can come electrical with external circuit by anisotropic conductive or anisotropic conductive film
Connect.
Fig. 5 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention.Fig. 5 B is edge
The generalized section of the line E-E of Fig. 5 A.Please also refer to Fig. 5 A and Fig. 5 B, the luminescence of the present embodiment
Light-emitting device 100d in device 100e and Fig. 4 A and Fig. 4 B is similar, is in place of the two Main Differences:
Connect for seamless between the first electrode extension 126e2 and the first electrode portion 126e1 of the present embodiment,
And connect for seamless between the second electrode extension 128e2 and the second electrode portion 128e1.It is to say,
The first electrode extension 126e2 and the first electrode portion 126e1 of the first electrode 126e of luminescence unit 120e
One-body molded, and the second electrode extension 128e2 of the first electrode 128e and the second electrode portion 12,8e1 mono-
Body formed, light-emitting device 100e structural integrity so can be made preferable, there is preferable reliability.One
In a little embodiments, light-emitting device 100e can use anisotropy conductive layer to come with external circuit and be electrically connected with.
For example, the first electrode 126e and the second electrode 128e of light-emitting device 100e can pass through different side
Property conducting resinl or anisotropic conductive film come with external circuit be electrically connected with.
Fig. 6 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention.Fig. 6 B is edge
The generalized section of the line F-F of Fig. 6 A.Please also refer to Fig. 6 A and Fig. 6 B, the luminescence of the present embodiment
Light-emitting device 100d in device 100f and Fig. 4 A and Fig. 4 B is similar, is in place of the two Main Differences:
The edge of the first electrode extension 126f2 of the present embodiment and the edge of the second electrode extension 128f2 trim
In the edge of packaging body 130f and the edge of light transmitting cells 110, and non-encapsulated body 130f cladding.This
Time, the first electrode extension 126f2 of luminescence unit 120f is configured on the first electrode portion 126f1, and
The upper surface 132f of the first upper surface S1 ' and packaging body 130f of the first electrode extension 126f2 is substantially
Copline.The second electrode extension 128f2 of luminescence unit 120f is configured on the second electrode portion 128f1,
And the second upper surface 132f essence of the second upper surface S2 ' and packaging body 130f of electrode extension 128f2
Upper copline.In certain embodiments, light-emitting device 100f can use anisotropy conductive layer to come with outside
Circuit is electrically connected with.For example, the first electrode 126f and the second electrode 128f of light-emitting device 100f
Can to be electrically connected with external circuit by anisotropic conductive or anisotropic conductive film.
Fig. 7 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention.Fig. 7 B is edge
The generalized section of the line G-G of Fig. 7 A.Please also refer to Fig. 7 A and Fig. 7 B, the luminescence of the present embodiment
Light-emitting device 100f in device 100g and Fig. 6 A and Fig. 6 B is similar, is in place of the two Main Differences:
Connect for seamless between the first electrode extension 126g2 and the first electrode portion 126g1 of the present embodiment,
And connect for seamless between the second electrode extension 128g2 and the second electrode portion 128g1.It is to say,
The first electrode extension 126g2 and the first electrode portion 126g1 of the first electrode 126g of luminescence unit 120g
One-body molded, and the second electrode extension 128g2 of the first electrode 128g and the second electrode portion 12,8g1 mono-
Body formed.In certain embodiments, light-emitting device 100g can use anisotropy conductive layer to come and external electrical
Road is electrically connected with.For example, the first electrode 126g and the second electrode 128g of light-emitting device 100g
Can to be electrically connected with external circuit by anisotropic conductive or anisotropic conductive film.
Fig. 8 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention.Fig. 8 B is edge
The generalized section of the line H-H of Fig. 8 A.Please also refer to Fig. 8 A and Fig. 8 B, the luminescence of the present embodiment
Light-emitting device 100g in device 100h and Fig. 7 A and Fig. 7 B is similar, is in place of the two Main Differences:
The first electrode 126h of the luminescence unit 120h of the present embodiment also include connecting the first electrode portion 126h1 with
The one first connecting portion 126h3 of the first electrode extension 126h2.The extension side of the first connecting portion 126h3
To the bearing of trend and the bearing of trend of the first electrode extension 126h2 that are perpendicular to the first electrode portion 126h1.
Between first electrode portion 126h1, the first connecting portion 126h3 and the first electrode extension 126h2 permissible
It is that seamless connects.The second electrode 128h of luminescence unit 120h also includes connecting the second electrode portion 128h1
The one second connecting portion 128h3 with the second electrode extension 128h2.The extension of the second connecting portion 128h3
Direction is perpendicular to bearing of trend and the extension side of the second electrode extension 128h2 of the second electrode portion 128h1
To.Between second electrode portion 128h1, the second connecting portion 128h3 and the second electrode extension 128h2
Can be that seamless connects.The first upper surface S1 of the first electrode extension 126h2 ", the second electrode prolongs
Second upper surface S2 of extending portion 128h2 " and the upper surface 132h substantially copline of packaging body 130h.
Packaging body 130h fills up the interval d between the first electrode 126h and the second electrode 128h.Herein, first
The edge of electrode extension 126h2 and the edge of the second electrode extension 128h2 trim in packaging body 130h
Edge and the edge of photic zone 110.In certain embodiments, light-emitting device 100h can use different
Property conductive layer in side's to be electrically connected with external circuit.For example, first electrode of light-emitting device 100h
126h and the second electrode 128h can be come and external electrical by anisotropic conductive or anisotropic conductive film
Road is electrically connected with.
Fig. 9 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention.Fig. 9 B is edge
The generalized section of the line I-I of Fig. 9 A.Please also refer to Fig. 9 A and Fig. 9 B, the luminous dress of the present embodiment
Put the light-emitting device 100h in 100i to Fig. 8 A and Fig. 8 B similar, be in place of the two Main Differences:
The sidewall of the first electrode extension 126i2 of the present embodiment and the sidewall of the second electrode extension 128i2 are sealed
Dress body 130i is coated with.It is to say, the first electrode 126i of the luminescence unit 120i of the present embodiment,
Packaged by two electrode 128i, epitaxial structure layer 124 and substrate 122 packed body 130i, but expose
The upper surface of above-mentioned electrode.Herein, the first electrode extension 126i2 of the first electrode 126i passes through first
Connecting portion 126i3 and the first electrode portion 126i1 is connected, and first table of the first electrode extension 126i2
Face S1 " ' and the upper surface 132i substantially copline of packaging body 130i.And, the of the second electrode 128i
Two electrode extension 128i2 are connected by the second connecting portion 128i3 and the second electrode portion 128i1, and the
The second surface S2 of two electrode extension 128i2 " ' flat substantially altogether with the upper surface 132i of packaging body 130i
Face.In certain embodiments, light-emitting device 100i can use anisotropy conductive layer to come and external circuit electricity
Property connect.For example, the first electrode 126i and the second electrode 128i of light-emitting device 100i are permissible
To be electrically connected with external circuit by anisotropic conductive or anisotropic conductive film.
Figure 10 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention, and Figure 10 B
Generalized section for the line J-J along Figure 10 A.Refer to Figure 10 A and Figure 10 B, sending out of the present embodiment
Electro-optical device 100j is similar to the light-emitting device 100a of Figure 1A, and both difference is as described below.In this reality
Executing in the light-emitting device 100j of example, the first electrode extension 126j2 includes multiple first son separated from one another
Electrode 126j21,126j22, and the second electrode extension 128j2 includes multiple second son electricity separated from one another
Pole 128j21,128j22.In the present embodiment, these first sub-electrodes 126j21,126j22 is positioned at envelope
Two adjacent angular of dress body fall, and these second sub-electrodes 128j21,128j22 are positioned at the another two-phase of packaging body
Adjacent angle falls.In other words, these first sub-electrodes 126j21,126j22 is by the first 126j1 edge, electrode portion
The direction being directed away from the second electrode portion 128j1 extends, and these second sub-electrodes 128j21,128j22
The direction being directed away from the first electrode portion 126j1 by the edge of the second electrode portion 128j1 extends, thus these
Sub-electrode 126j21,126j22,128j21,128j22 respectively extend from light-emitting device 100j upper surface
Four corners.It addition, in the present embodiment, packaging body 130j encapsulates the first electrode portion 126j1 and
Two electrode portion 128j1, and these sub-electrodes 126j21,126j22,128j21,128j22 extend to and cover
Cover on packaging body 130j.In the present embodiment, light-emitting device 100j can also include photic zone 110, and
Packaging body 130j is configured on photic zone 110.Illustrate only luminescence compared to Figure 1B, Figure 10 B
Device 100j turns, and is beneficial to the situation of chip bonding.
In the light-emitting device 100j of the present embodiment, owing to being configured at four of light-emitting device 100j upper surface
These sub-electrodes 126j21,126j22,128j21, the 128j22 in corner can be engaged by four tin creams respectively
To circuit board, and four tin creams being configured at four corners can be with dispersive stress when reflow (reflow).
Consequently, it is possible to after being bonded to circuit board as light-emitting device 100j and cooling down, be unlikely to inclined for predeterminated position
Turn an angle, and then guarantee the yield of connection process.In certain embodiments, light-emitting device 100j can
To use anisotropy conductive layer to come and external circuit electric connection.For example, the of light-emitting device 100j
One electrode (the first electrode portion 126j1 and the first electrode extension 126j2) and the second electrode (second
Electrode portion 128j1 and the second electrode extension 128j2) can be led by anisotropic conductive or anisotropy
Electrolemma to be electrically connected with external circuit.
Figure 11 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention, and Figure 11 B
Generalized section for the line K-K along Figure 11 A.Refer to Figure 11 A and Figure 11 B, sending out of the present embodiment
Electro-optical device 100k is similar to the light-emitting device 100j of Figure 10 A and Figure 10 B, and the following institute of both difference
State.In the light-emitting device 100k of the present embodiment, first sub-electrode of the first electrode extension 126j2
The area that 126j21,126j22 cover the first electrode portion 126j1 is less, and it is covered each by the first electrode portion
Two adjacent corners of 126j1, the adjacent corner of the two is respectively close to the two of light-emitting device 100k upper surface
Individual adjacent corner.Additionally, second sub-electrode 128j21,128j22 of the second electrode extension 128j2 covers
The area covering the second electrode portion 128j1 is less, and it is covered each by two adjacent angular of the second electrode portion 128j1
Falling, the adjacent corner of the two is respectively close to two adjacent corners of light-emitting device 100k upper surface.At some
In embodiment, light-emitting device 100k can use anisotropy conductive layer to come with external circuit and be electrically connected with.Lift
For example, the first electrode (the first electrode portion 126j1 and first electrode extension of light-emitting device 100k
126k2) and the second electrode (the second electrode portion 128j1 and the second electrode extension 128k2) is permissible
To be electrically connected with external circuit by anisotropic conductive or anisotropic conductive film.
Figure 12 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention, and Figure 12 B
For the light-emitting device chip bonding of the line L-L along Figure 12 A to circuit board section schematic diagram.Refer to Figure 12 A
It is similar to the light-emitting device 100k of Figure 11 A and Figure 11 B with Figure 12 B, the light-emitting device 100l of the present embodiment,
And both difference is as described below.In the light-emitting device 100l of the present embodiment, the first electrode extension
These first sub-electrodes 126l21～126l28 of 126l2 is divided into two the first sub-electrode groups 126la, 126lb,
Each first sub-electrode group 126la, 126lb include a plurality of first sub-electrode of part respectively.For example,
As it can be seen, the first sub-electrode group 126la includes four the first sub-electrode 126l21-126l24, and first
Sub-electrode group 126lb includes four the first sub-electrode 126l25-126l28.Additionally, the second electrode extension
These second sub-electrodes 128l21～128l28 of 128l2 is divided into two the second sub-electrode groups 128la, 128lb,
Each second sub-electrode group 128la, 128lb include a plurality of second sub-electrode of part respectively.For example,
As it can be seen, the second sub-electrode group 128la includes four the second sub-electrode 128l21-128l24, and second
Sub-electrode group 128lb includes four the second sub-electrode 128l25-128l28.In the present embodiment, these two
First sub-electrode group 126la, 126lb are respectively arranged at two adjacent angular of light-emitting device 100l upper surface and fall,
And these two the second sub-electrode groups 128la, 128lb are respectively arranged at another the two of light-emitting device 100l upper surface
Adjacent corner.
Light-emitting device 100l can be engaged in circuit board 50 by the way of chip bonding.For example, two
First sub-electrode group 126la, 126lb are bonded to circuit board 50 by the tin cream 60 after two solidifications respectively
On electronic pads 52 (being positioned at the electronic pads 52 of left as shown in Figure 12 B), and two the second sub-electrode groups
The electronic pads 52 that 128la, 128lb are bonded on circuit board 50 by the tin cream 60 after two solidifications respectively
(being positioned at the electronic pads 52 of right as shown in Figure 12 B).Can insert adjacent before curing due to tin cream 60
Gap between two sub-electrodes, therefore tin cream 60 and the engaging force of the first sub-electrode 126l21-126l28 and stannum
Cream 60 can be sufficiently elevated with the engaging force of the second sub-electrode 128l21-128l28, and then lifting is sent out
Electro-optical device 100l is bonded to the reliability of circuit board 50.In certain embodiments, light-emitting device 100l can
To use anisotropy conductive layer to come and external circuit electric connection.For example, the of light-emitting device 100l
One electrode (the first electrode portion 126j1 and the first electrode extension 126l2) and the second electrode (second
Electrode portion 128j1 and the second electrode extension 128l2) can be led by anisotropic conductive or anisotropy
Electrolemma to be electrically connected with external circuit.
Figure 13 is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention.Refer to figure
13, the light-emitting device 100m of the present embodiment are similar to the light-emitting device 100j of Figure 10 A, and both differences
Different as described below.In the light-emitting device 100m of the present embodiment, the of the first electrode extension 126m2
One sub-electrode 126m21,126m23 is respectively arranged at adjacent two corners of light-emitting device 100m upper surface,
And the first sub-electrode 126m22 is configured between the first sub-electrode 126m21 and the first sub-electrode 126m23.
Send out additionally, second sub-electrode 128m21,128m23 of the second electrode extension 128m2 is respectively arranged at
Another two adjacent angular of electro-optical device 100m upper surface fall, and the second sub-electrode 128m22 is configured at the second son electricity
Between pole 128m21 and the second sub-electrode 128m23.
In other embodiments of the invention, the first sub-electrode and the quantity of the second sub-electrode and configuration mode
Can also be other various modes, the present invention be not limited.It addition, in certain embodiments, luminous
Device 100m can use anisotropy conductive layer to come with external circuit and be electrically connected with.For example, luminous
First electrode (the first electrode portion 126j1 and the first electrode extension 126m2) of device 100m and
Second electrode (the second electrode portion 128j1 and the second electrode extension 128m2) can pass through anisotropy
Conducting resinl or anisotropic conductive film to be electrically connected with external circuit.
Figure 14 is the generalized section of a kind of light-emitting device of another embodiment of the present invention.Refer to figure
14, the light-emitting device 100a of light-emitting device 100n with Figure 1B of the present embodiment is similar, and both difference
As described below.In the present embodiment, light-emitting device 100n also includes a reflecting layer 140n, at least configures
On the upper surface 132a of packaging body 130a.In the present embodiment, at least part of reflecting layer 140n configuration
Between the first electrode 126a and the upper surface 132a of packaging body 130a, and it is configured at the second electrode 128a
And between the upper surface 132a of packaging body 130a.Specifically, reflecting layer 140n is configured in the first electricity
Between pole extension 126a2 and the upper surface 132a of packaging body 130a, and it is configured at the second electrode extension
Between the upper surface 132a of portion 128a2 and packaging body 130a.Reflecting layer 140n for example, gold, aluminum, silver,
Nickel, titanium, Bragg mirror, mixed with tool high reflectance reflective particle resin bed (such as layer of silica gel or
Epoxy resin layer) or a combination thereof.The light that luminescence unit 120a can be sent by reflecting layer 140n is toward photic zone
The direction reflection of 110, so that light goes out light from photic zone 110 side more efficiently.When reflecting layer, 140n is
When being formed by insulant, reflecting layer 140n can join together and cover the upper table of whole packaging body 130a
Face 132a.But, when reflecting layer 140n is conductive material or metal material, reflecting layer 140n configures
Part under the first electrode extension 126a2 to be configured at the second electrode extension with reflecting layer 140n
Part under 128a2 is separated, to avoid short circuit.In certain embodiments, light-emitting device 100n can adopt
To be electrically connected with external circuit with anisotropy conductive layer.For example, first electricity of light-emitting device 100n
Pole 126a and the second electrode 128a can be come with outside by anisotropic conductive or anisotropic conductive film
Circuit is electrically connected with.
Figure 15 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention, and Figure 15 B
Generalized section for the light-emitting device of the line M-M along Figure 15 A.Refer to Figure 15 A and Figure 15 B,
The light-emitting device 100f of light-emitting device 100p and Fig. 6 A and Fig. 6 B of the present embodiment is similar, and both
Difference is as described below.In the light-emitting device 100p of the present embodiment, the first electrode 126p and the second electrode
128p is protruded from the upper surface 132a of packaging body 130a by upwardly extending on epitaxial structure layer 124.?
In the present embodiment, the first electrode 126p and the second electrode 128p neither covers the upper surface of packaging body 130a
132a。
Specifically, the first electrode extension 126p2 of the first electrode 126p is positioned at the first electrode portion 126a1
Go up and protrude from the upper surface 132a of packaging body 130a, second electrode extension of the second electrode 128p
128p2 is positioned on the second electrode portion 128a1 and protrudes from the upper surface 132a of packaging body 130a.In this reality
Executing in example, the first electrode extension 126p2 and the second electrode extension 128p2 neither covers packaging body 130a
Upper surface 132a, and both substantially coplines.In other embodiments, the first electrode 126p and
Two electrode 128p can also be by upwardly extending on epitaxial structure layer 124 and non-bulging in packaging body 130a
Upper surface 132a.For example, the upper surface of the first electrode extension 126p2 (is i.e. tied back to epitaxy
The surface of structure layer 124), the upper surface of the second electrode extension 128p2 is (i.e. back to epitaxial structure layer 124
Surface) can substantially copline with the upper surface 132a of packaging body 130a.
In the present embodiment, made by the first electrode extension 126p2 and the second electrode extension 128p2
First electrode 126p and the second electrode 128p increases, it will help the carrying out of die bond connection process.One
In a little embodiments, light-emitting device 100p can use anisotropy conductive layer to come with external circuit and be electrically connected with.
For example, the first electrode 126p and the second electrode 128p of light-emitting device 100p can pass through different side
Property conducting resinl or anisotropic conductive film come with external circuit be electrically connected with.
Figure 16 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention, and Figure 16 B
Generalized section for the light-emitting device of the line N-N along Figure 16 A.The light-emitting device 100q of the present embodiment
It is similar to light-emitting device 100p, and both difference is as described below.Light-emitting device 100q at the present embodiment
In, upwardly extending first electrode extension includes multiple first sub-electrode 126q2 separated from one another, and
Upwardly extending second electrode extension includes multiple second sub-electrode 128q2 separated from one another.At some
In embodiment, light-emitting device 100q can use anisotropy conductive layer to come with external circuit and be electrically connected with.Lift
For example, first electrode (the first electrode portion 126a1 and the first sub-electrode 126q2) of light-emitting device 100q
And second electrode (the second electrode portion 128a1 and the second sub-electrode 128q2) can be led by anisotropy
Electricity glue or anisotropic conductive film to be electrically connected with external circuit.
Figure 17 A is the schematic top plan view of a kind of light-emitting device of another embodiment of the present invention, and Figure 17 B
Generalized section for the light-emitting device of the line P-P along Figure 17 A.Refer to Figure 17 A and Figure 17 B, this
The light-emitting device 100r of embodiment is similar to light-emitting device 100q, and both difference is: light-emitting device
The first sub-electrode 126q2 and the second sub-electrode 128q2 of 100q are layered electrode, and the present embodiment send out
The first sub-electrode 126r2 and the second sub-electrode 128r2 of electro-optical device 100r are sphere pole, and it may utilize
Plant playing skill art to be formed.In certain embodiments, light-emitting device 100r can use anisotropy conductive layer
It is electrically connected with external circuit.For example, the first electrode (first electrode portion 126a1 of light-emitting device 100r
And the first sub-electrode 126r2) and the second electrode (the second electrode portion 128a1 and the second sub-electrode
128r2) can be electrically connected with external circuit by anisotropic conductive or anisotropic conductive film.
Figure 18 A is light-emitting device chip bonding the cuing open to circuit board that one embodiment of the invention adopts Figure 1B
Face schematic diagram, and Figure 18 B is the partial enlarged drawing of region M1 in Figure 18 A.Refer to Figure 18 A and figure
18B, light-emitting device 100a can be engaged in circuit board 50 by the way of chip bonding.For example,
One electrode extension 126a2 and the second electrode extension 128a2 is respectively by the tin cream 60 after two solidifications
Two electronic padses 52 being bonded on circuit board 50.
In the present embodiment, the first electrode extension 126a2 and the second electrode extension 128a2 respectively includes
One following layer L1 and one is configured at the barrier layer L2 between following layer L1 and packaging body 130a.Following layer
Material include gold, stannum, aluminum, silver, copper, indium, bismuth, platinum, gold-tin alloy, sn-ag alloy, Xi Yin
Copper alloy (SAC alloy) or a combination thereof, and the material of barrier layer include nickel, titanium, gold or a combination thereof
Alloy.Following layer L1 is conducive to engaging with tin cream 60, and barrier layer L2 can be prevented effectively from tin cream 60
Material in connection process, invade packaging body 130a and pollute light-emitting device 100a.
In the present embodiment, the first electrode extension 126a2 and the second electrode extension 128a2 the most also wraps
Include a reflecting layer L3, be at least configured between barrier layer L2 and packaging body 130a.Reflecting layer L3 can be anti-
Penetrate the light from epitaxial structure layer 124, to promote light utilization efficiency.In the present embodiment, reflecting layer L3
Material include the alloy of gold, aluminum, silver, nickel, titanium or a combination thereof.
Figure 18 C is that another embodiment of the present invention adopts the light-emitting device chip bonding of Figure 1B to circuit board
Generalized section, refer to Figure 18 C, light-emitting device 100a and can be engaged in electricity by the way of chip bonding
Road plate 50, and form light-emitting device 200a.In the present embodiment, light-emitting device 200a includes circuit board
50, light-emitting device 100a and anisotropy conductive layer 150.Specifically, the first of light-emitting device 100a
Electrode 126a and the second electrode 128a is bonded on circuit board 50 by anisotropy conductive layer 150, and
First electrode 126a and the second electrode 128a is electrically connected with the electronic pads 52 on circuit board 50.
In the present embodiment, anisotropy conductive layer 150 includes an insulation colloid 152 and is scattered in insulation
Multiple electric conductors 154 of colloid 152.Specifically, anisotropy conductive layer 150 can be that anisotropy is led
Electricity glue (Anisotropic Conductive Adhesive is called for short ACA), anisotropic conductive film
(Anisotropic Conductive Film, be called for short ACF) or other are provided simultaneously with conduction and adhesive function
Material, the present invention is not limited thereto.In the present embodiment, anisotropy conductive layer 150 is the most different
Side's property conducting resinl.By to anisotropy conductive layer 150 in the first electrode 126a and corresponding electronic pads 52
Between correspondence position pressurization or heating so that these electric conductors 154 are connected and contact first
Electrode 126a and corresponding electronic pads 52, and then make the first electrode 126a electrical with corresponding electronic pads 52
Connect.It addition, by anisotropy conductive layer 150 in the second electrode 128a and corresponding electronic pads 52
Between correspondence position pressurization or heating, the second electrode 128a can be made electrical with corresponding electronic pads 52
Connect.In the present embodiment, do not pressurize or on the position heated, these are led at anisotropy conductive layer 150
Electricity body 154 cannot be electrically connected with so that light-emitting device 200a is not susceptible to short circuit in the horizontal direction.
Figure 19 A to 19D is the schematic diagram of the manufacturing process of the light-emitting device of one embodiment of the invention, please
Referring initially to Figure 19 A.In the present embodiment, the manufacture method of light-emitting device includes providing circuit board 50a.Electricity
Road plate 50a includes multiple electronic pads 52a and connects the circuit structure (not shown) of these electronic padses 52a.
Specifically, circuit board 50a can be printed circuit board (PCB) (printed circuit board, be called for short PCB),
Secondary adhesion base station (Submount), metal-core printed circuit board (metal core printed circuit board,
Be called for short MCPCB) or other there is the loading plate of conducting wire, the present invention is not limited thereto.Then,
Luminescence unit 120j is provided.Luminescence unit 120j includes epitaxial structure layer 124a and is configured at epitaxy knot
The first electrode 126q on structure layer 124a and the second electrode 128q.In the present embodiment, epitaxial structure
Layer 124a is semiconductor epitaxial structure layer.First electrode 126q and the second electrode 128q is respectively arranged at
On the same side of epitaxial structure layer 124a.Specifically, luminescence unit 120j also includes substrate 122a.
Epitaxial structure layer 124a is configured on substrate 122a, and the first electrode 126q and the second electrode 128q
It is configured on the epitaxial structure layer 124a side away from substrate 122a.Afterwards, with anisotropy conductive layer 150 '
Attach circuit board 50a and luminescence unit 120j.Specifically, anisotropy conductive layer 150 ' can be attached
On circuit board 50a and cover the first electrode 126q and the second electrode 128q make a reservation for engage electronic pads 52a
Position.In some embodiments, it is also possible to it is close that anisotropy conductive layer 150 ' is attached luminescence unit 52a
On one side surface of circuit board 50a.Specifically, anisotropy conductive layer 150 ' can be covered the first electricity
Pole 126q and the second electrode 128q.In the present embodiment, anisotropy conductive layer 150 ' includes insulating cement
Body 152 ' and be scattered in insulation colloid 152 ' multiple electric conductors 154 '.
Next referring to Figure 19 A and Figure 19 B.In the present embodiment, the manufacture method of light-emitting device is also
Including making the first electrode 126q and second electrode 128q para-position these electronic padses 52a.Specifically, make
Luminescence unit 120j is configured on anisotropy conductive layer 150 ', and the first electrode 126q is pointed to an electronic pads
52a, and the second electrode 128q is pointed to another electronic pads 52a.Then, to anisotropy conductive layer 150 '
Carry out a process, make the first electrode 126q and the second electrode 128q electrically connect with these electronic padses 52a
Connect.In the present embodiment, this processes and includes anisotropy conductive layer 150 ' corresponding to the first electrode 126q
And second electrode 128q part pressurization or heating and form processed anisotropy conductive layer 150 ".
Specifically, processed anisotropy conductive layer 150 " corresponding to the first electrode 126q and second electricity
The part of pole 128q is respectively and electrically connected to the first electrode 126q and the second electrode 128q.
Next referring to Figure 19 C and Figure 19 D.In the present embodiment, the manufacture method of light-emitting device is also
After being electrically connected with including making the first electrode 126q and the second electrode 128q and these electronic padses 52a, move
Except substrate 122a, to form light-emitting device 200b.In the present embodiment, the method removing substrate 122a
Including utilizing laser stripping method (laser lift-off), remove substrate 122a with thunder laser beam LL.At this
In embodiment, it is able to be spliced directly to light emitting diode epitaxy thin film by the manufacture method of light-emitting device
External circuit.But, in some embodiments, it is also possible to by the making of the light-emitting device of the present embodiment
Method by light-emitting device 100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h, 100i,
100j, 100k, 100l, 100m, 100n, 100p, 100q, 100r or the luminescence of other forms two
Pole pipe encapsulation is bonded to external circuit, and the present invention is not limited thereto.
In the present embodiment, the first electrode 126q and the second electrode 128q of light-emitting device 200b passes through
Anisotropy conductive layer 150 " it is bonded on circuit board 50a, and the first electrode 126q and the second electrode 128q
By anisotropy conductive layer 150 " it is electrically connected with the electronic pads 52a on circuit board 50a.Due to anisotropy
Conductive layer 150 " mobility that is as heated in scolding tin and that produce will not be produced because of pressurization or heating, therefore send out
Electro-optical device 200b is difficult to be short-circuited in the horizontal direction or leak electricity.It addition, anisotropy conductive layer 150 "
The buffer capacity that more general scolding tin is good is provided, for example, in the present embodiment, makes the first electrode 126q
And second after electrode 128q and these electronic padses 52a be electrically connected with, thunder laser beam LL is also utilized to remove
Substrate 122a.Specifically, anisotropy conductive layer 150 " it is able to during thunder laser beam LL processes
Slight deformation, and at least buffer epitaxial structure layer 124a, the first electrode 126q and the second electrode 128q,
Make to buffer epitaxial structure layer 124a, the first electrode 126q and the second electrode 128q will not be in processing
During damage.Therefore, the yield of light-emitting device 200b is promoted.
Figure 20 is the flow chart of steps of the manufacture method of the light-emitting device of one embodiment of the invention, refer to
Figure 20.The manufacture method of described light-emitting device the most e.g. apply Figure 18 C light-emitting device 200a,
The light-emitting device 200b of Figure 19 A to 19D and being applied to make Figure 1A to 17B light-emitting device 100a,
100b、100c、100d、100e、100f、100g、100h、100i、100j、100k、100l、100m、
100n、100p、100q、100r.The manufacture method following steps of described light-emitting device.In step S100
In, it is provided that include the circuit board of multiple electronic pads.Then, in step s 200, it is provided that luminescence unit.
Luminescence unit includes semiconductor epitaxial structure layer and the first electrode being configured on semiconductor epitaxial structure layer
And second electrode.Afterwards, in step S300, attach circuit board and luminescence list with anisotropy conductive layer
Unit.In step S400, make the first electrode and second these electronic padses of electrode para-position.Afterwards in step
In S500, anisotropy conductive layer is processed, make the first electrode and the second electrode and these electronic padses
It is electrically connected with.
It addition, the manufacture method of the light-emitting device of embodiments of the invention can be real by Figure 1A to Figure 18 C
Execute and the narration of example is obtained enough teaching, advise and implements explanation, therefore repeat no more.
In sum, it is to build from quasiconductor due to the first electrode of luminescence unit and second electrode of the present invention
Stretch out on crystal structure layer and be covered on packaging body, say, that the light-emitting device of the present invention can have
There is bigger electrode area, and when follow-up being assembled on an external circuit, it is possible to it is effectively improved assembling
Time para-position precision.The first electrode of luminescence unit and the second electrode due to one embodiment of the invention
It is to upwardly extend from semiconductor epitaxial structure layer and protrude from packaging body, is thus advantageous to follow-up die bond
Connection process.It addition, first electrode and second of luminescence unit in the light-emitting device of the embodiment of the present invention
Electrode is electrically connected with these electronic padses by anisotropy conductive layer.Therefore, light-emitting device is difficult in level
It is short-circuited on direction or leaks electricity, and the yield of light-emitting device is good.Additionally, the embodiment of the present invention send out
The manufacture method of electro-optical device includes attaching circuit board and luminescence unit with anisotropy conductive layer, and to different side
Property conductive layer process, make the first electrode and the second electrode be electrically connected with these electronic padses.Therefore,
Light-emitting device made by the manufacture method of light-emitting device is difficult to be short-circuited in the horizontal direction or leak
Electricity, and its yield is good.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, rather than right
It limits；Although the present invention being described in detail with reference to foregoing embodiments, this area common
Skilled artisans appreciate that the technical scheme described in foregoing embodiments still can be modified by it,
Or the most some or all of technical characteristic is carried out equivalent；And these amendments or replacement, and
The essence not making appropriate technical solution departs from the scope of various embodiments of the present invention technical scheme.
Claims (14)
1. a light-emitting device, it is characterised in that including:
One circuit board, including multiple electronic padses；
One luminescence unit, including semiconductor epitaxial structure layer, one first electrode and one second electrode,
Described first electrode and described second electrode are respectively arranged at the same side of described semiconductor epitaxial structure layer
On；And
One anisotropy conductive layer, described first electrode and described second electrode are conducted electricity by described anisotropy
Layer is electrically connected with those electronic padses.
Light-emitting device the most according to claim 1, it is characterised in that described luminescence unit also includes
One substrate, described semiconductor epitaxial structure layer is configured on described substrate, and described first electrode and institute
State the second electrode to be configured on the described semiconductor epitaxial structure layer side away from described substrate.
Light-emitting device the most according to claim 1, it is characterised in that also include a photic zone, institute
Stating luminescence unit to be configured on described photic zone, described luminescence unit is configured at described photic zone and described the
Between one electrode, and it is configured between described photic zone and described second electrode.
4. the manufacture method of a light-emitting device, it is characterised in that including:
The circuit board including multiple electronic pads is provided；
A luminescence unit, described luminescence unit is provided to include semiconductor epitaxial structure layer and are configured at institute
State one first electrode on semiconductor epitaxial structure layer and one second electrode；
Described circuit board or described luminescence unit is attached with an anisotropy conductive layer；
Make described first electrode and described second those electronic padses of electrode para-position；And
Described anisotropy conductive layer is carried out a process, make described first electrode and described second electrode with
Those electronic padses are electrically connected with.
The manufacture method of light-emitting device the most according to claim 4, it is characterised in that described process
Add corresponding to the part of described first electrode and described second electrode including to described anisotropy conductive layer
Pressure, makes described anisotropy conductive layer corresponding to the part difference of described first electrode and described second electrode
It is electrically connected to described first electrode and described second electrode.
The manufacture method of light-emitting device the most according to claim 4, it is characterised in that described process
Add corresponding to the part of described first electrode and described second electrode including to described anisotropy conductive layer
Heat, makes described anisotropy conductive layer corresponding to the part difference of described first electrode and described second electrode
It is electrically connected to described first electrode and described second electrode.
7. a light-emitting device, it is characterised in that including:
One circuit board；
One luminescence unit, including:
One substrate；
Semiconductor epitaxial structure layer, is configured on described substrate；And
One first electrode and the second electrode, be respectively arranged on the same side of described semiconductor epitaxial structure layer；
One photic zone, described luminescence unit is configured on described photic zone；
One packaging body, between described photic zone and described luminescence unit and encapsulate described luminescence unit also
At least the first electrode described in exposed portion and described second electrode of part, described first electrode and described second
Electrode is respectively by stretching out on described semiconductor epitaxial structure layer and being covered each by the most described packaging body
Portion of upper surface；And
One anisotropy conductive layer, described first electrode and described second electrode are conducted electricity by described anisotropy
Layer is electrically connected with described circuit board.
Light-emitting device the most according to claim 7, it is characterised in that described anisotropy conductive layer bag
Include an insulation colloid and be scattered in multiple electric conductors of described insulation colloid.
9. a light-emitting device, it is characterised in that including:
One circuit board；
One luminescence unit, including:
One substrate；
Semiconductor epitaxial structure layer, is configured on described substrate；
One first electrode and one second electrode, be configured on the same side of described semiconductor epitaxial structure layer；
One packaging body, encapsulates described luminescence unit and at least the first electrode described in exposed portion and part is described
Second electrode, described first electrode and described second electrode respectively by described semiconductor epitaxial structure layer to
Upper extension and the most do not cover a upper surface of described packaging body；And
One anisotropy conductive layer, described first electrode and described second electrode are conducted electricity by described anisotropy
Layer is electrically connected with described circuit board.
Light-emitting device the most according to claim 9, it is characterised in that described anisotropy conductive layer bag
Include an insulation colloid and be scattered in multiple electric conductors of described insulation colloid.
11. 1 kinds of light-emitting devices, it is characterised in that including:
One circuit board；
One luminescence unit, including
One substrate；
Semiconductor epitaxial structure layer, is configured on described substrate；And
One first electrode and one second electrode, be respectively arranged at the same side of described semiconductor epitaxial structure layer
On；
One packaging body, encapsulates described luminescence unit and at least the first electrode described in exposed portion and part is described
Second electrode, described first electrode and described second electrode respectively by described semiconductor epitaxial structure layer to
Outer extension and be covered each by the portion of upper surface of the most described packaging body；And
One anisotropy conductive layer, described first electrode and described second electrode are conducted electricity by described anisotropy
Layer is electrically connected with described circuit board.
12. light-emitting devices according to claim 11, it is characterised in that described anisotropy conductive layer
Including an insulation colloid and multiple electric conductors of being scattered in described insulation colloid.
13. 1 kinds of light-emitting devices, it is characterised in that including:
One circuit board；
One luminescence unit, including
One substrate；
Semiconductor epitaxial structure layer, is configured on described substrate；And
One first electrode and one second electrode, be respectively arranged at the same side of described semiconductor epitaxial structure layer
On；
One photic zone, described luminescence unit is configured on described photic zone；
One packaging body, between described photic zone and described luminescence unit and encapsulate described luminescence unit also
At least the first electrode described in exposed portion and described second electrode of part, described first electrode and described second
Electrode is upwardly extended by described semiconductor epitaxial structure layer respectively and does not cover table on the one of described packaging body
Face；And
One anisotropy conductive layer, described first electrode and described second electrode are conducted electricity by described anisotropy
Layer is electrically connected with described circuit board.
14. light-emitting devices according to claim 13, it is characterised in that described anisotropy conductive layer
Including an insulation colloid and multiple electric conductors of being scattered in described insulation colloid.
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| Application Number | Priority Date | Filing Date | Title |
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| US201562116923P | 2015-02-17 | 2015-02-17 | |
| US62/116923 | 2015-02-17 | ||
| TW104113482A TW201543716A (en) | 2014-05-07 | 2015-04-27 | Light emitting device |
| TW104113482 | 2015-04-27 |
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| CN105895769A true CN105895769A (en) | 2016-08-24 |
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| CN107819003A (en) * | 2016-09-14 | 2018-03-20 | 群创光电股份有限公司 | Display device |
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| CN107819003A (en) * | 2016-09-14 | 2018-03-20 | 群创光电股份有限公司 | Display device |
| US10886259B2 (en) | 2016-09-14 | 2021-01-05 | Innolux Corporation | Display devices |
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