TW201543716A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
TW201543716A
TW201543716A TW104113482A TW104113482A TW201543716A TW 201543716 A TW201543716 A TW 201543716A TW 104113482 A TW104113482 A TW 104113482A TW 104113482 A TW104113482 A TW 104113482A TW 201543716 A TW201543716 A TW 201543716A
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TW
Taiwan
Prior art keywords
electrode
package
illuminating device
light
layer
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Application number
TW104113482A
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Chinese (zh)
Inventor
Shao-Ying Ting
Kuan-Chieh Huang
Jing-En Huang
Yu-Feng Lin
Yi-Ru Huang
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Genesis Photonics Inc
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Application filed by Genesis Photonics Inc filed Critical Genesis Photonics Inc
Priority to TW104113482A priority Critical patent/TW201543716A/en
Priority to US14/705,977 priority patent/US20150325748A1/en
Priority to JP2015095107A priority patent/JP2016015474A/en
Priority to CN201510228882.1A priority patent/CN105098025A/en
Publication of TW201543716A publication Critical patent/TW201543716A/en
Priority to US15/046,407 priority patent/US20160254428A1/en
Priority to CN201610089250.6A priority patent/CN105895769A/en
Priority to US15/405,323 priority patent/US10050183B2/en
Priority to US16/102,691 priority patent/US20180374998A1/en

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Abstract

A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a portion of the first electrode and a portion of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a portion of the first electrode and a portion of the second electrode. Each of the first electrode and the second electrode extends outwardly from the epitaxial structure layer, and covers at least a portion of upper surface of the encapsulant, respectively.

Description

發光裝置 Illuminating device

本發明是有關於一種發光裝置,且特別是有關於一種發光二極體封裝的結構。 The present invention relates to a light emitting device, and more particularly to a structure of a light emitting diode package.

在習知的覆晶發光二極體封裝的結構中,磊晶結構層的邊緣會切齊於基板的邊緣或內縮,而N電極與P電極的邊緣會切齊磊晶結構層的邊緣或是與磊晶結構層的邊緣相隔一垂直距離,也就是說,N電極與P電極於基板上的正投影面積小於磊晶結構層於基板上的正投影面積,在這樣的配置下,當欲將覆晶發光二極體封裝組裝至一外部電路時,由於N電極與P電極的電極面積相對較小,因此發光二極體封裝在組裝時易有對位不精準以及電極接觸不良的問題產生。 In a conventional flip-chip LED package structure, the edge of the epitaxial structure layer is aligned with the edge or the retraction of the substrate, and the edges of the N electrode and the P electrode are aligned with the edge of the epitaxial structure layer or Is perpendicular to the edge of the epitaxial structure layer, that is, the positive projection area of the N electrode and the P electrode on the substrate is smaller than the orthographic projection area of the epitaxial structure layer on the substrate. Under such a configuration, when When the flip-chip LED package is assembled to an external circuit, since the electrode areas of the N electrode and the P electrode are relatively small, the LED package is prone to misalignment and poor electrode contact during assembly. .

本發明提供一種發光裝置,其具有較大的電極面積,有助於提高後續組裝上的對位精準度。 The invention provides a light-emitting device with a large electrode area, which helps to improve the alignment accuracy on subsequent assembly.

本發明的一種發光裝置,包括一發光單元、一透光層及一封裝層。發光單元包括一基板、一配置於基板上的磊晶結構層,以及一第一電極與第二電極,分別配置於磊晶結構層的同一側上。發光單元配置於透光層上且至少曝露第一電極及第二電極。封裝體封裝發光單元並至少曝露部分第一電極及部分第二電極,第一電極與第二電極分別由磊晶結構層上向外延伸且分別覆蓋至少封裝體的部分上表面。 A light emitting device of the present invention comprises a light emitting unit, a light transmissive layer and an encapsulation layer. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer. The light emitting unit is disposed on the light transmissive layer and exposes at least the first electrode and the second electrode. The package encloses the light emitting unit and exposes at least a portion of the first electrode and a portion of the second electrode. The first electrode and the second electrode respectively extend outward from the epitaxial structure layer and respectively cover at least a portion of the upper surface of the package.

在本發明的一實施例中,第一電極包括連接磊晶結構層的一第一電極部以及連接第一電極部的一第一電極延伸部,而第二電極包括連接磊晶結構層的一第二電極部以及連接第二電極部的一第二電極延伸部,第一電極延伸部與第二電極延伸部分別向外延伸於至少部分封裝體的上表面。 In an embodiment of the invention, the first electrode includes a first electrode portion connecting the epitaxial structure layer and a first electrode extension portion connecting the first electrode portion, and the second electrode includes a first layer connected to the epitaxial structure layer The second electrode portion and a second electrode extending portion connecting the second electrode portion, the first electrode extending portion and the second electrode extending portion respectively extending outwardly from at least a portion of the upper surface of the package.

在本發明的一實施例中,第一電極延伸部與第二電極延伸部切齊於或內縮於封裝體的上表面的邊緣。 In an embodiment of the invention, the first electrode extension and the second electrode extension are aligned or contracted to the edge of the upper surface of the package.

在本發明的一實施例中,第一電極部與第二電極部切齊於或內縮於磊晶結構層的邊緣。 In an embodiment of the invention, the first electrode portion and the second electrode portion are aligned or contracted to the edge of the epitaxial structure layer.

在本發明的一實施例中,發光裝置還包括一或多個平坦的表面,每一平坦的表面包括透光層及封裝體。 In an embodiment of the invention, the light emitting device further includes one or more flat surfaces, each flat surface including a light transmissive layer and a package.

在本發明的一實施例中,第一電極延伸部包括多個第一柵狀電極,而第二電極延伸部包括多個第二柵狀電極,該些第一柵狀電極分布在第一電極部與封裝體的部分上表面上,該些第二柵狀電極分布在第二電極部與封裝體的部分上表面上。 In an embodiment of the invention, the first electrode extension portion includes a plurality of first grid electrodes, and the second electrode extension portion includes a plurality of second grid electrodes, the first grid electrodes are distributed on the first electrode And on the upper surface of the portion of the package and the package, the second grid electrodes are distributed on the second electrode portion and a portion of the upper surface of the package.

在本發明的一實施例中,至少部分第一電極延伸部由第一電極部的邊緣往遠離第二電極部的方向延伸,且至少部分第二電極延伸部由第二電極部的邊緣往遠離第一電極部的方向延伸。 In an embodiment of the invention, at least a portion of the first electrode extension extends from an edge of the first electrode portion away from the second electrode portion, and at least a portion of the second electrode extension is moved away from an edge of the second electrode portion The direction of the first electrode portion extends.

在本發明的一實施例中,第一電極延伸部與第二電極延伸部分別包括多個彼此分離的子電極。 In an embodiment of the invention, the first electrode extension and the second electrode extension respectively comprise a plurality of sub-electrodes separated from each other.

在本發明的一實施例中,第一電極延伸部的該些子電極位於封裝體的上表面上遠離第二電極的至少一角落,且第二電極延伸部的該些第二子電極位於封裝體的上表面上遠離第一電極的至少一角落。 In an embodiment of the invention, the sub-electrodes of the first electrode extension portion are located on the upper surface of the package body away from at least one corner of the second electrode, and the second sub-electrodes of the second electrode extension portion are located in the package At least one corner of the upper surface of the body away from the first electrode.

在本發明的一實施例中,第一電極延伸部、第二電極延伸部的頂面與封裝體的上表面實質上共平面。 In an embodiment of the invention, the top surfaces of the first electrode extension and the second electrode extension are substantially coplanar with the upper surface of the package.

在本發明的一實施例中,第一電極部與第一電極延伸部為無接縫連接,第二電極部與第二電極延伸部為無接縫連接。 In an embodiment of the invention, the first electrode portion and the first electrode extension portion are seamlessly connected, and the second electrode portion and the second electrode extension portion are seamlessly connected.

在本發明的一實施例中,第一電極延伸部與第二電極延伸部分別包括一接著層及一配置於接著層與封裝體之間的阻障層。 In an embodiment of the invention, the first electrode extension portion and the second electrode extension portion respectively include an adhesive layer and a barrier layer disposed between the adhesive layer and the package body.

在本發明的一實施例中,接著層的材質包括金、錫、鋁、銀、銅、銦、鉍、鉑、金錫合金、錫銀合金、錫銀銅合金(SAC alloy)或其組合,且阻障層的材質包括鎳、鈦、鵭、金或其組合之合金。 In an embodiment of the invention, the material of the adhesive layer comprises gold, tin, aluminum, silver, copper, indium, bismuth, platinum, gold tin alloy, tin silver alloy, tin silver alloy (SAC alloy) or a combination thereof. And the material of the barrier layer includes an alloy of nickel, titanium, tantalum, gold or a combination thereof.

在本發明的一實施例中,第一電極與第二電極分別更包括一反射層,分別配置於該些電極延伸部與封裝體之間。 In an embodiment of the invention, the first electrode and the second electrode further comprise a reflective layer respectively disposed between the electrode extensions and the package.

在本發明的一實施例中,反射層的材質包括金、鋁、銀、 鎳、鈦或其組合之合金。 In an embodiment of the invention, the material of the reflective layer comprises gold, aluminum, silver, An alloy of nickel, titanium or a combination thereof.

在本發明的一實施例中,發光裝置更包括一反射層,配置於封裝體的表面上。 In an embodiment of the invention, the light emitting device further includes a reflective layer disposed on a surface of the package.

在本發明的一實施例中,至少部分反射層位於該些電極與封裝體之間。 In an embodiment of the invention, at least a portion of the reflective layer is between the electrodes and the package.

在本發明的一實施例中,反射層的材質包括金、鋁、銀、鎳、鈦、布拉格反射鏡(Distributed Bragg Reflector,DBR)、摻有具高反射率的反射粒子的樹脂層或其組合。 In an embodiment of the invention, the material of the reflective layer comprises gold, aluminum, silver, nickel, titanium, a Bragg Reflector (DBR), a resin layer doped with reflective particles having high reflectivity, or a combination thereof. .

在本發明的一實施例中,發光裝置更包括一波長轉換材料,包覆發光單元並至少曝露部分第一電極及部分第二電極。 In an embodiment of the invention, the light emitting device further includes a wavelength converting material covering the light emitting unit and exposing at least a portion of the first electrode and a portion of the second electrode.

在本發明的一實施例中,波長轉換材料包括螢光材料或量子點材料。 In an embodiment of the invention, the wavelength converting material comprises a fluorescent material or a quantum dot material.

在本發明的一實施例中,波長轉換材料是形成在發光單元的表面、形成在封裝體的表面或混合在封裝體中。 In an embodiment of the invention, the wavelength converting material is formed on the surface of the light emitting unit, formed on the surface of the package, or mixed in the package.

在本發明的一實施例中,該些第一子電極與該些第二子電極為層狀電極、球狀電極或柵狀電極。 In an embodiment of the invention, the first sub-electrodes and the second sub-electrodes are layer electrodes, spherical electrodes or grid electrodes.

本發明的一實施例提出一種發光裝置,包括一發光單元、一透光層及一封裝層。發光單元包括一基板、一配置於基板上磊晶結構層以及一第一電極與第二電極,分別配置於磊晶結構層而相反於基板的同一側上。透光層配置於發光單元上且位於基板的一側相反於磊晶結構層、第一電極及第二電極一封裝體,位於該發光單元與該透光層之間。封裝體封裝發光單元並至少曝露 部分第一電極及部分第二電極,第一電極與第二電極分別由磊晶結構層上向外延伸且分別覆蓋至少封裝體的部分上表面。 An embodiment of the invention provides a light emitting device comprising a light emitting unit, a light transmissive layer and an encapsulation layer. The illuminating unit comprises a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode respectively disposed on the same side of the epitaxial structure layer opposite to the substrate. The light transmissive layer is disposed on the light emitting unit and is located on one side of the substrate opposite to the epitaxial structure layer, the first electrode and the second electrode, and is disposed between the light emitting unit and the light transmissive layer. The package encloses the light unit and is exposed at least a portion of the first electrode and a portion of the second electrode, the first electrode and the second electrode respectively extending outward from the epitaxial structure layer and covering at least a portion of the upper surface of the package body.

本發明的一實施例提出一種發光裝置,包括一發光單元及一封裝層。發光單元包括一基板、一配置於該基板上的磊晶結構層以及一第一電極及一第二電極,配置於磊晶結構層的同一側上。封裝體封裝發光單元並至少曝露部分第一電極及部分第二電極,第一電極與第二電極分別由磊晶結構層上向上延伸且不覆蓋封裝體的一上表面。 An embodiment of the invention provides a light emitting device comprising a light emitting unit and an encapsulation layer. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer. The package encloses the light emitting unit and exposes at least a portion of the first electrode and a portion of the second electrode. The first electrode and the second electrode respectively extend upward from the epitaxial structure layer and do not cover an upper surface of the package.

本發明的一實施例提出一種發光裝置,包括一發光單元及一封裝層。發光單元包括一基板、一配置於基板上的磊晶結構層以及一第一電極與第二電極,分別配置於磊晶結構層的同一側上。封裝體封裝發光單元並至少曝露部分第一電極及部分第二電極。第一電極與第二電極分別由磊晶結構層上向外延伸且分別覆蓋至少封裝體的部分上表面。 An embodiment of the invention provides a light emitting device comprising a light emitting unit and an encapsulation layer. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer. The package encloses the light emitting unit and exposes at least a portion of the first electrode and a portion of the second electrode. The first electrode and the second electrode respectively extend outward from the epitaxial structure layer and respectively cover at least a part of the upper surface of the package body.

本發明的一實施例提出一種發光裝置,包括一發光單元、一透光層及一封裝層。發光單元包括一基板、一配置於該基板上的磊晶結構層以及一第一電極與第二電極,分別配置於磊晶結構層的同一側上。發光單元配置於透光層上且至少曝露第一電極及第二電極。封裝體封裝發光單元並至少曝露部分第一電極及部分第二電極,第一電極與第二電極分別由磊晶結構層向上延伸而不覆蓋封裝體的一上表面。 An embodiment of the invention provides a light emitting device comprising a light emitting unit, a light transmissive layer and an encapsulation layer. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer. The light emitting unit is disposed on the light transmissive layer and exposes at least the first electrode and the second electrode. The package encloses the light emitting unit and exposes at least a portion of the first electrode and a portion of the second electrode. The first electrode and the second electrode respectively extend upward from the epitaxial structure layer without covering an upper surface of the package.

本發明的一實施例提出一種發光裝置,包括一發光單 元、一透光層及一封裝層。發光單元包括一基板、一配置於該基板上的磊晶結構層以及一第一電極與第二電極,分別配置於磊晶結構層而相反於基板的同一側上。透光層配置於發光單元上且位於基板的一側相反於磊晶結構層、第一電極及第二電極。封裝體位於發光單元與透光層之間,封裝體封裝發光單元並至少曝露部分第一電極及部分第二電極,第一電極與第二電極分別由磊晶結構層向上延伸而不覆蓋封裝體的一上表面。 An embodiment of the invention provides a light emitting device including a light emitting single a light, a light transmissive layer and an encapsulation layer. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the substrate and opposite to the substrate. The light transmissive layer is disposed on the light emitting unit and is located on one side of the substrate opposite to the epitaxial structure layer, the first electrode and the second electrode. The package is located between the light emitting unit and the light transmissive layer, and the package encloses the light emitting unit and exposes at least a portion of the first electrode and a portion of the second electrode. The first electrode and the second electrode respectively extend upward from the epitaxial structure layer without covering the package. One of the upper surfaces.

基於上述,由於本發明的一實施例的發光單元的第一電極與第二電極是從磊晶結構層上向外延伸並可覆蓋至少部分封裝膠體,也就是說,相較於習知第一電極與第二電極的設計而言,本發明的發光裝置(發光二極體封裝)可具有較大的電極面積,且當後續欲組裝至一外部電路上時,亦可有效提高組裝時的對位精準度。由於本發明的一實施例的發光單元的第一電極與第二電極是從磊晶結構層上向上延伸而凸出於封裝較體,因此有利於後續的固晶接合製程。 Based on the above, since the first electrode and the second electrode of the light emitting unit of the embodiment of the present invention extend outward from the epitaxial structure layer and cover at least part of the encapsulant, that is, compared with the conventional first In the design of the electrode and the second electrode, the light-emitting device (light-emitting diode package) of the present invention can have a larger electrode area, and can be effectively improved when assembled to an external circuit. Bit accuracy. Since the first electrode and the second electrode of the light emitting unit of the embodiment of the present invention extend upward from the epitaxial structure layer and protrude from the package body, the subsequent solid crystal bonding process is facilitated.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.

50‧‧‧電路板 50‧‧‧ boards

52‧‧‧電極墊 52‧‧‧electrode pads

60‧‧‧錫膏 60‧‧‧ solder paste

100a、100b、100c、100d、100e、100f、100g、100h、100i、100j、100k、100l、100m、100n、100p、100q、100r‧‧‧發光裝置(發光二極體封裝) 100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h, 100i, 100j, 100k, 100l, 100m, 100n, 100p, 100q, 100r ‧ ‧ illuminating device (light emitting diode package)

110‧‧‧透光層 110‧‧‧Transparent layer

120a、120b、120c、120d、120e、120f、120g、120h、120i‧‧‧發光單元 120a, 120b, 120c, 120d, 120e, 120f, 120g, 120h, 120i‧‧‧ lighting unit

122‧‧‧基板 122‧‧‧Substrate

124‧‧‧磊晶結構層 124‧‧‧ epitaxial structure layer

125‧‧‧表面 125‧‧‧ surface

126a、126b、126c、126d、126e、126f、126g、126h、126i、126p‧‧‧第一電極 126a, 126b, 126c, 126d, 126e, 126f, 126g, 126h, 126i, 126p‧‧‧ first electrode

126a1、126b1、126c1、126d1、126e1、126f1、126g1、126h1、 126i1、126j1‧‧‧第一電極部 126a1, 126b1, 126c1, 126d1, 126e1, 126f1, 126g1, 126h1 126i1, 126j1‧‧‧ first electrode

126a2、126b2、126c2、126d2、126e2、126f2、126g2、126h2、126i2、126j2、126l2、126m2、126p2‧‧‧第一電極延伸部 126a2, 126b2, 126c2, 126d2, 126e2, 126f2, 126g2, 126h2, 126i2, 126j2, 126l2, 126m2, 126p2‧‧‧ first electrode extension

126h3、126i3‧‧‧第一連接部 126h3, 126i3‧‧‧ first connection

126j21、126j22、126l21~126l28、126m21、126m22、126m23、126q2、126r2‧‧‧第一子電極 126j21, 126j22, 126l21~126l28, 126m21, 126m22, 126m23, 126q2, 126r2‧‧‧ first subelectrode

126la、126lb‧‧‧第一子電極組 126la, 126lb‧‧‧ first sub-electrode set

128a、128b、128c、128d、128e、128f、128g、128h、128i、128p‧‧‧第二電極 128a, 128b, 128c, 128d, 128e, 128f, 128g, 128h, 128i, 128p‧‧‧ second electrode

128a1、128b1、128c1、128d1、128e1、128f1、128g1、128h1、128i1、128j1‧‧‧第二電極部 128a1, 128b1, 128c1, 128d1, 128e1, 128f1, 128g1, 128h1, 128i1, 128j1‧‧‧ second electrode portion

128a2、128b2、128c2、128d2、128e2、128f2、128g2、128h2、128i2、128j2、128l2、128m2、128p2‧‧‧第二電極延伸部 128a2, 128b2, 128c2, 128d2, 128e2, 128f2, 128g2, 128h2, 128i2, 128j2, 128l2, 128m2, 128p2‧‧‧ second electrode extension

128h3、128i3‧‧‧第二連接部 128h3, 128i3‧‧‧ second connection

128j21、128j22、128l21~128l28、128m21、128m22、128m23、128q2、128r2‧‧‧第二子電極 128j21, 128j22, 128l21~128l28, 128m21, 128m22, 128m23, 128q2, 128r2‧‧‧ second subelectrode

128la、128lb‧‧‧第二子電極組 128la, 128lb‧‧‧ second sub-electrode set

130a、130d、130f、130h、130i、130j‧‧‧封裝體 130a, 130d, 130f, 130h, 130i, 130j‧‧‧ package

132a、132d、132f、132h、132i‧‧‧上表面 132a, 132d, 132f, 132h, 132i‧‧‧ upper surface

134a‧‧‧波長轉換材料 134a‧‧‧wavelength conversion material

140n‧‧‧反射層 140n‧‧‧reflective layer

L1‧‧‧接著層 L1‧‧‧Next layer

L2‧‧‧阻障層 L2‧‧‧ barrier layer

L3‧‧‧反射層 L3‧‧‧reflective layer

M1‧‧‧區域 M1‧‧‧ area

R1、R1’‧‧‧第一柵狀電極 R1, R1'‧‧‧ first grid electrode

R2、R2’‧‧‧第二柵狀電極 R2, R2'‧‧‧ second grid electrode

S1、S1’、S1”、S1’’’‧‧‧第一上表面 S1, S1', S1", S1'' ‧ ‧ ‧ first upper surface

S2、S2’、S2”、S2’’’‧‧‧第二上表面 S2, S2', S2", S2'' ‧ ‧ ‧ second upper surface

T1‧‧‧第一頂面 T1‧‧‧ first top

T2‧‧‧第二頂面 T2‧‧‧ second top surface

d‧‧‧間隔 D‧‧‧ interval

圖1A繪示為本發明的一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 1A is a schematic top view of a light emitting diode package structure according to an embodiment of the invention.

圖1B繪示為沿圖1A的線A-A的剖面示意圖。 FIG. 1B is a cross-sectional view taken along line A-A of FIG. 1A.

圖2A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 2A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖2B繪示為沿圖2A的線B-B的剖面示意圖。 2B is a cross-sectional view taken along line B-B of FIG. 2A.

圖3A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 3A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖3B繪示為沿圖3A的線C-C的剖面示意圖。 FIG. 3B is a cross-sectional view taken along line C-C of FIG. 3A.

圖4A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 4A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖4B繪示為沿圖4A的線D-D的剖面示意圖。 4B is a cross-sectional view taken along line D-D of FIG. 4A.

圖5A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 5A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖5B繪示為沿圖5A的線E-E的剖面示意圖。 FIG. 5B is a cross-sectional view taken along line E-E of FIG. 5A.

圖6A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 6A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖6B繪示為沿圖6A的線F-F的剖面示意圖。 6B is a cross-sectional view taken along line F-F of FIG. 6A.

圖7A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 7A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖7B繪示為沿圖7A的線G-G的剖面示意圖。 FIG. 7B is a cross-sectional view taken along line G-G of FIG. 7A.

圖8A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 8A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖8B繪示為沿圖8A的線H-H的剖面示意圖。 FIG. 8B is a cross-sectional view taken along line H-H of FIG. 8A.

圖9A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 9A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖9B繪示為沿圖9A的線I-I的剖面示意圖。 9B is a cross-sectional view taken along line I-I of FIG. 9A.

圖10A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 10A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖10B繪示為沿圖10A的線J-J的剖面示意圖。 FIG. 10B is a cross-sectional view taken along line J-J of FIG. 10A.

圖11A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 11A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖11B繪示為沿圖11A的線K-K的剖面示意圖。 FIG. 11B is a cross-sectional view taken along line K-K of FIG. 11A.

圖12A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 12A is a schematic top view of a light emitting diode package structure according to another embodiment of the invention.

圖12B繪示為沿圖12A的線L-L的發光二極體封裝結構覆晶接合至電路板剖面示意圖。 FIG. 12B is a cross-sectional view showing the flip-chip bonding to the circuit board along the light-emitting diode package structure of the line L-L of FIG. 12A.

圖13繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 13 is a schematic top plan view of a light emitting diode package structure according to another embodiment of the invention.

圖14繪示為本發明的另一實施例的一種發光二極體封裝結構的剖面示意圖。 FIG. 14 is a cross-sectional view showing a light emitting diode package structure according to another embodiment of the present invention.

圖15A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 15A is a schematic top plan view of a light emitting diode package structure according to another embodiment of the invention.

圖15B繪示為沿圖15A的線M-M的發光二極體封裝結構的剖面示意圖。 15B is a cross-sectional view showing the light emitting diode package structure along the line M-M of FIG. 15A.

圖16A繪示為本發明的另一實施例的一種發光二極體封裝結 構的俯視示意圖。 FIG. 16A illustrates a light emitting diode package junction according to another embodiment of the present invention. A schematic view of the structure.

圖16B繪示為沿圖16A的線N-N的發光二極體封裝結構的剖面示意圖。 16B is a cross-sectional view showing the light emitting diode package structure along the line N-N of FIG. 16A.

圖17A繪示為本發明的另一實施例的一種發光二極體封裝結構的俯視示意圖。 FIG. 17A is a top plan view of a light emitting diode package structure according to another embodiment of the invention.

圖17B繪示為沿圖17A的線P-P的發光二極體封裝結構的剖面示意圖。 17B is a cross-sectional view showing the light emitting diode package structure along line P-P of FIG. 17A.

圖18A繪示為圖1B之發光二極體封裝結構覆晶接合至電路板剖面示意圖。 FIG. 18A is a cross-sectional view showing the flip-chip bonding of the light emitting diode package structure of FIG. 1B to a circuit board. FIG.

圖18B繪示圖18A中區域M1的局部放大圖。 Fig. 18B is a partial enlarged view of the area M1 of Fig. 18A.

圖1A繪示為本發明的一實施例的一種發光裝置的俯視示意圖。圖1B繪示為沿圖1A的線A-A的剖面示意圖。請同時參考圖1A與圖1B,在本實施例中,發光裝置100a其包括一透光層110、一發光單元120a以及一封裝體130a。發光單元120a例如是一發光二極體,包括一基板122、一磊晶結構層124、一第一電極126a以及一第二電極128a。磊晶結構層124配置於基板122上。在本實施例中,磊晶結構層124的周圍切齊於基板122的周圍。第一電極126a配置於磊晶結構層124的一側上。第二電極128a配置於磊晶結構層124上,且與第一電極126a設置於磊晶結構層124上相反於基板122的同一側,其中第一電極126a與第二電極 128a之間具有一間隔d。發光單元120a配置於透光層110上且透光層110位於發光單元120a的基板122相反於磊晶結構層124、第一電極126a以及第二電極128a的一側,而至少曝露出部分第一電極126a及部分第二電極128a。封裝體130a配置於透光層110上,且位於發光單元120a與透光層110之間,其中封裝體130a封裝發光單元120a而曝露出至少部分第一電極126a與部分第二電極128a,而第一電極126a與第二電極128a由磊晶結構層124上分別向外延伸且覆蓋至少部分封裝體130a的一上表面132a。更詳細的說,磊晶結構層124至少包括依序電性連接的第一型半導體層(未繪示)、發光層(未繪示)及第二型半導體層(未繪示),第一電極126a與第一型半導體層電性連接,且第二電極128a與第二型半導體層電性連接。在本實施例中,封裝體130a的邊緣切齊透光層110的邊緣,使得發光裝置100a形成有一或多個平坦的表面。 FIG. 1A is a schematic top view of a light emitting device according to an embodiment of the invention. FIG. 1B is a cross-sectional view taken along line A-A of FIG. 1A. Referring to FIG. 1A and FIG. 1B simultaneously, in the embodiment, the light emitting device 100a includes a light transmissive layer 110, a light emitting unit 120a, and a package body 130a. The light emitting unit 120a is, for example, a light emitting diode, and includes a substrate 122, an epitaxial structure layer 124, a first electrode 126a, and a second electrode 128a. The epitaxial structure layer 124 is disposed on the substrate 122. In the present embodiment, the periphery of the epitaxial structure layer 124 is aligned around the substrate 122. The first electrode 126a is disposed on one side of the epitaxial structure layer 124. The second electrode 128a is disposed on the epitaxial structure layer 124, and is disposed on the epitaxial structure layer 124 opposite to the same side of the substrate 122, wherein the first electrode 126a is opposite to the second electrode. There is a spacing d between 128a. The light emitting unit 120a is disposed on the light transmissive layer 110, and the light transmissive layer 110 is located on a side of the substrate 122 of the light emitting unit 120a opposite to the epitaxial structure layer 124, the first electrode 126a, and the second electrode 128a, and at least partially exposed. The electrode 126a and a portion of the second electrode 128a. The package body 130a is disposed on the light transmissive layer 110 and located between the light emitting unit 120a and the light transmissive layer 110. The package body 130a encapsulates the light emitting unit 120a to expose at least a portion of the first electrode 126a and a portion of the second electrode 128a. An electrode 126a and a second electrode 128a extend outward from the epitaxial structure layer 124 and cover at least a portion of the upper surface 132a of the package body 130a. In more detail, the epitaxial structure layer 124 includes at least a first type semiconductor layer (not shown) electrically connected, a light emitting layer (not shown), and a second type semiconductor layer (not shown), first The electrode 126a is electrically connected to the first type semiconductor layer, and the second electrode 128a is electrically connected to the second type semiconductor layer. In the present embodiment, the edge of the package body 130a is aligned with the edge of the light transmissive layer 110 such that the light emitting device 100a forms one or more flat surfaces.

詳細來說,本實施例的透光層110適於引導發光單元120a所發出的光並讓光穿透,其中透光層110的材質例如是可透光的無機材料,包括但不限於玻璃或陶瓷;或可透光的有機材料,包括但不限於矽膠、環氧樹脂或各種樹脂,而透光層110的透光率最佳至少為50%。透光層110的型態可以是平坦的透光板或其他形狀的透光層。在本發明其他實施例中,發光裝置100a可以不包括透光層110,並且封裝體130a形成有一或多個平坦的表面。發光單元120a例如是為一覆晶式發光二極體晶片,其中發光單元 120a的基板122的材質例如是藍寶石、氮化鎵、氧化鎵、碳化矽或氧化鋅,但並不以此為限。再者,本實施例的第一電極126a包括一第一電極部126a1以及一第一電極延伸部126a2。第二電極128a包括一第二電極部128a1以及一第二電極延伸部128a2。第一電極部126a1與第二電極部128a1的邊緣切齊於或不切齊於(例如內縮於)磊晶結構層124的邊緣。第一電極延伸部126a2位於第一電極部126a1上且向外延伸而覆蓋封裝體130a的上表面132a。第二電極延伸部128a2位於第二電極部128a1上且向外延伸而覆蓋封裝體130a的上表面132a。此處,第一電極部126a1與第一電極延伸部126a2可採用相同或不同材質,而第二電極部128a1與第二電極延伸部128a2可採用相同或不同材質,於此並不加以限制。在本實施例中,第一電極延伸部126a2分別由第一電極部126a1向上延伸以及往遠離第二電極部128a1的方向延伸,且第二電極延伸部128a2分別由第二電極部128a1向上延伸以及往遠離第一電極部126a的方向延伸。 In detail, the light transmissive layer 110 of the present embodiment is adapted to guide the light emitted by the light emitting unit 120a and pass the light, wherein the material of the light transmissive layer 110 is, for example, a light transmissive inorganic material, including but not limited to glass or Ceramic; or light transmissive organic material, including but not limited to silicone, epoxy or various resins, and the light transmissive layer 110 preferably has a light transmittance of at least 50%. The shape of the light transmissive layer 110 may be a flat translucent plate or a light transmissive layer of other shapes. In other embodiments of the present invention, the light emitting device 100a may not include the light transmissive layer 110, and the package body 130a forms one or more flat surfaces. The light emitting unit 120a is, for example, a flip-chip light emitting diode chip, wherein the light emitting unit The material of the substrate 122 of 120a is, for example, sapphire, gallium nitride, gallium oxide, tantalum carbide or zinc oxide, but is not limited thereto. Furthermore, the first electrode 126a of the embodiment includes a first electrode portion 126a1 and a first electrode extension portion 126a2. The second electrode 128a includes a second electrode portion 128a1 and a second electrode extension portion 128a2. The edges of the first electrode portion 126a1 and the second electrode portion 128a1 are aligned or not aligned (eg, contracted) with the edge of the epitaxial structure layer 124. The first electrode extension portion 126a2 is located on the first electrode portion 126a1 and extends outward to cover the upper surface 132a of the package body 130a. The second electrode extension portion 128a2 is located on the second electrode portion 128a1 and extends outward to cover the upper surface 132a of the package body 130a. Here, the first electrode portion 126a1 and the first electrode extending portion 126a2 may be of the same or different materials, and the second electrode portion 128a1 and the second electrode extending portion 128a2 may be of the same or different materials, and are not limited thereto. In the present embodiment, the first electrode extensions 126a2 extend upward from the first electrode portion 126a1 and extend away from the second electrode portion 128a1, and the second electrode extensions 128a2 extend upward from the second electrode portion 128a1, respectively. It extends in a direction away from the first electrode portion 126a.

此外,本實施例的封裝體130a的材質例如是可透光的無機材料或有機材料,其中無機材料包括但不限於玻璃或陶瓷,有機材料包括但不限於矽膠、環氧樹脂或各種樹脂。發光裝置100a還包括有至少一波長轉換材料,波長轉換材料包括但不限於螢光體或量子點。波長轉換材料134a可摻雜在封裝體130a內,用來改變發光單元120a所發出的光的波長。在本發明其他實施例中,也可以在發光單元120a的表面直接形成波長轉換材料層,並至少 曝露出部分第一電極126a與部分第二電極128a,使得波長轉換材料層位於封裝體130a與發光單元120a之間,形成的方法包括但不限於噴塗或貼附。而在本發明其他另一實施例中,波長轉換材料層也可以形成在封裝體130a的表面,並至少曝露出部分第一電極126a與部分第二電極128a,使得封裝體130a位於波長轉換材料層與發光單元120a之間,形成的方法包括但不限於噴塗或貼附。當然,於其他實施例中,發光裝置100a可以不包括波長轉換材料,此仍屬於本發明可採用的技術方案,仍不脫離本發明所欲保護的範圍。 In addition, the material of the package body 130a of the present embodiment is, for example, a light transmissive inorganic material or an organic material, wherein the inorganic materials include, but are not limited to, glass or ceramics, and the organic materials include, but are not limited to, silicone rubber, epoxy resin, or various resins. The light emitting device 100a further includes at least one wavelength converting material including, but not limited to, a phosphor or a quantum dot. The wavelength converting material 134a may be doped in the package body 130a for changing the wavelength of light emitted by the light emitting unit 120a. In other embodiments of the present invention, a wavelength conversion material layer may be directly formed on the surface of the light emitting unit 120a, and at least A portion of the first electrode 126a and a portion of the second electrode 128a are exposed such that the wavelength conversion material layer is located between the package body 130a and the light emitting unit 120a, and the method of forming includes, but is not limited to, spraying or attaching. In another embodiment of the present invention, the wavelength conversion material layer may also be formed on the surface of the package body 130a, and at least a portion of the first electrode 126a and the portion of the second electrode 128a are exposed, so that the package body 130a is located in the wavelength conversion material layer. The method of forming with the light emitting unit 120a includes, but is not limited to, spraying or attaching. Of course, in other embodiments, the illuminating device 100a may not include the wavelength converting material, and this still belongs to the technical solution that can be adopted by the present invention without departing from the scope of the present invention.

簡言之,由於本實施例的第一電極126a與第二電極128a具有覆蓋於封裝體130a的上表面132a的第一電極延伸部126a2與第二電極延伸部128a2的設計,因此相較於習知第一電極與第二電極的設計而言,本實施例的發光裝置100a(例如是發光二極體封裝)可具有較大的電極面積。此外,當後續欲將發光二極體封裝100a組裝至一外部電路(未繪示)上時,第一電極126a與第二電極128a的設計亦可提高發光二極體封裝進行組裝時的對位精準度,且亦可避免習知電極接觸不良的問題產生。具體而言,由於第一電極延伸部126a2及第二電極延伸部128a2分別擴大了第一電極部126a1與第二電極部128a1的面積,因此當藉由錫膏、導電凸塊或其他導電連接材質將第一電極126a與第二電極128a分別與電路板接合時,因導電連接材質(例如是錫膏)的溢流而導致配置於第一電極126a上的錫膏與配置於第二電極128a上的錫膏相 接觸,進而造成短路。因此,採用本實施例之第一電極延伸部126a2與第二電極延伸部128a2,因此發光裝置100a具有較大的電極面積,當使用錫膏使發光裝置100a與電路板接合時,減少或避免錫膏溢流而造成短路的狀況,能確保接合可靠度。 In short, since the first electrode 126a and the second electrode 128a of the present embodiment have a design of the first electrode extension portion 126a2 and the second electrode extension portion 128a2 covering the upper surface 132a of the package body 130a, Knowing the design of the first electrode and the second electrode, the light-emitting device 100a of the present embodiment (for example, a light-emitting diode package) may have a larger electrode area. In addition, when the LED package 100a is subsequently assembled to an external circuit (not shown), the design of the first electrode 126a and the second electrode 128a can also improve the alignment of the LED package when assembled. Accuracy, and can also avoid the problem of poor electrode contact. Specifically, since the first electrode extension portion 126a2 and the second electrode extension portion 128a2 respectively enlarge the areas of the first electrode portion 126a1 and the second electrode portion 128a1, the material is soldered by solder paste, conductive bumps or other conductive materials. When the first electrode 126a and the second electrode 128a are respectively bonded to the circuit board, the solder paste disposed on the first electrode 126a is disposed on the second electrode 128a due to the overflow of the conductive connection material (for example, solder paste). Solder paste phase Contact, which in turn causes a short circuit. Therefore, the first electrode extending portion 126a2 and the second electrode extending portion 128a2 of the present embodiment are employed, so that the light emitting device 100a has a larger electrode area, and when the soldering device 100a is bonded to the circuit board using solder paste, tin is reduced or avoided. The condition in which the paste overflows and causes a short circuit ensures the reliability of the joint.

值得一提的是,在此實施例中,第一電極延伸部126a2的邊緣與第二電極延伸部128a2的邊緣切齊於封裝體130a的邊緣以及透光層110的邊緣,除了電極面積變大,以增加對位精準度之外,這樣的設計在製程上可更為簡便,進而節省製程時間,原因在於封裝體130a可一次封裝多個具有第一電極部126a1與第二電極部128a1的發光單元120a,之後同時鍍上第一電極延伸部126a2與第二電極延伸部128a2後,再直接加以切割形成發光裝置100a(例如是發光二極體封裝結構)。 It is worth mentioning that, in this embodiment, the edge of the first electrode extending portion 126a2 and the edge of the second electrode extending portion 128a2 are aligned with the edge of the package body 130a and the edge of the light transmitting layer 110, except that the electrode area becomes larger. In addition to increasing the alignment accuracy, such a design can be more convenient in the process, thereby saving process time, because the package body 130a can package a plurality of light having the first electrode portion 126a1 and the second electrode portion 128a1 at a time. The unit 120a is then plated with the first electrode extension 126a2 and the second electrode extension 128a2, and then directly cut to form the light-emitting device 100a (for example, a light-emitting diode package structure).

在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。 It is to be noted that the following embodiments use the same reference numerals and parts of the above-mentioned embodiments, and the same reference numerals are used to refer to the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

圖2A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖。圖2B繪示為沿圖2A的線B-B的剖面示意圖。請同時參考圖2A與圖2B,本實施例的發光裝置100b與圖1A及圖1B中的發光裝置100a相似,惟二者主要差異之處在於:本實施例的第一電極126b的第一電極延伸部126b2是由多個第一柵狀電極R1所組成,而第二電極128b的第二電極延伸部128b2是由多個 第二柵狀電極R2所組成。部分第一柵狀電極R1與第二柵狀電極R2分別由第一電極部126b1與第二電極部128b1向上延伸,部分第一柵狀電極R1與第二柵狀電極R2配置於封裝體130a的上表面132a上。 2A is a schematic top view of a light emitting device according to another embodiment of the present invention. 2B is a cross-sectional view taken along line B-B of FIG. 2A. Referring to FIG. 2A and FIG. 2B simultaneously, the light-emitting device 100b of the present embodiment is similar to the light-emitting device 100a of FIGS. 1A and 1B, but the main difference between the two is that the first electrode of the first electrode 126b of the present embodiment The extension portion 126b2 is composed of a plurality of first grid electrodes R1, and the second electrode extension portion 128b2 of the second electrode 128b is composed of a plurality of The second grid electrode R2 is composed of. The first grating electrode R1 and the second grating electrode R2 extend upward from the first electrode portion 126b1 and the second electrode portion 128b1, respectively, and the first grating electrode R1 and the second grating electrode R2 are disposed on the package body 130a. Upper surface 132a.

其中,第一柵狀電極R1呈間隔排列(例如是等間距排列)且暴露出部分第一電極部126b1以及部分封裝體130a。第二柵狀電極R2呈間隔排列(例如是等間距排列)且暴露出部分第二電極部128b1以及部分封裝體130a。特別是,每一第一柵狀電極R1具有一第一頂面T1,而每一第二柵狀電極R2具有一第二頂面T2。第一柵狀電極R1的第一頂面T1與第二柵狀電極R2的第二頂面T2實質上共平面。如此一來,當後續將發光裝置100b組裝至一外部電路(未繪示)上時,發光單元120b的第一電極126b與第二電極128b的設計可提供較佳的組裝平整度以及較大的電極面積,以利於發光二極體封裝結構100b進行後續的組裝。 The first grid electrodes R1 are arranged at intervals (for example, at equal intervals) and expose a portion of the first electrode portion 126b1 and the partial package 130a. The second grid electrodes R2 are arranged at intervals (for example, at equal intervals) and expose a portion of the second electrode portion 128b1 and the partial package 130a. In particular, each of the first grid electrodes R1 has a first top surface T1, and each of the second grid electrodes R2 has a second top surface T2. The first top surface T1 of the first grid electrode R1 and the second top surface T2 of the second grid electrode R2 are substantially coplanar. In this way, when the illuminating device 100b is subsequently assembled to an external circuit (not shown), the design of the first electrode 126b and the second electrode 128b of the illuminating unit 120b can provide better assembly flatness and larger The electrode area is facilitated for subsequent assembly of the light emitting diode package structure 100b.

圖3A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖。圖3B繪示為沿圖3A的線C-C的剖面示意圖。請同時參考圖3A與圖3B,本實施例的發光裝置100c與圖2A及圖2B中的發光裝置100b相似,惟二者主要差異之處在於:本實施例的第一電極延伸部126c2是由多個第一柵狀電極R1’所組成,而第二電極延伸部128c2是由多個第二柵狀電極R2’所組成,其中第一柵狀電極R1’與第二柵狀電極R2’更延伸配置於第一電極126c與第二電極128c之間的間隔d處。如此一來,發光單元120c的電極 面積可由磊晶結構層124延伸至封裝體130a上,以使發光裝置100c可具有較大的電極面積,製程簡易,且有助於提高後續組裝上的對位精準度,需說明的是,柵狀電極與電路板的連接在實際應用上可用異方性導電膠來實現。 FIG. 3A is a schematic top view of a light emitting device according to another embodiment of the present invention. FIG. 3B is a cross-sectional view taken along line C-C of FIG. 3A. Referring to FIG. 3A and FIG. 3B simultaneously, the light-emitting device 100c of the present embodiment is similar to the light-emitting device 100b of FIGS. 2A and 2B, but the main difference between the two is that the first electrode extension portion 126c2 of the present embodiment is composed of The plurality of first grid electrodes R1 ′ are formed, and the second electrode extensions 128 c 2 are composed of a plurality of second grid electrodes R 2 ′, wherein the first grid electrodes R 1 ′ and the second grid electrodes R 2 ′ are further The extension is disposed at an interval d between the first electrode 126c and the second electrode 128c. In this way, the electrode of the light emitting unit 120c The area can be extended by the epitaxial structure layer 124 to the package body 130a, so that the light-emitting device 100c can have a larger electrode area, the process is simple, and the alignment accuracy on subsequent assembly is improved, and it should be noted that the gate is The connection between the electrode and the circuit board can be realized by an anisotropic conductive adhesive in practical applications.

圖4A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖。圖4B繪示為沿圖4A的線D-D的剖面示意圖。請同時參考圖4A與圖4B,本實施例的發光裝置100d與圖1A及圖1B中的發光裝置100a相似,惟二者主要差異之處在於:本實施例的封裝體130d更包覆第一電極126d、第二電極128d而暴露出上述電極的上表面,且封裝體130d填滿第一電極126d與第二電極128d之間的間隔d,其中第一電極延伸部126d2的側壁與第二電極延伸部128d2的側壁亦被封裝體130d所包覆。此外,第一電極延伸部126d2的邊緣與第二電極延伸部128d2的邊緣內縮於封裝體130d的邊緣與透光層110的邊緣。第一電極延伸部126d2的一第一上表面S1、第二電極延伸部128d2的一第二上表面S2與封裝體130d的上表面132d實質上共平面。也就是說,第一電極延伸部126d2配置於第一電極部126d1上,且第一電極延伸部126d2的第一上表面S1與封裝體130d的上表面132d實質上共平面。第二電極延伸部128d2配置於第二電極部128d1上,且第二電極延伸部128d2的第二上表面S2與封裝體130d的上表面132d實質上共平面。如此一來,當發光裝置100d與一外部電路(未繪示)電性連接時,發光單元120d的第一電極126d與第二電極128d的設計,可使發 光裝置100d於組裝時沒有組裝間隙(gap),可有效防止水氣與氧氣進入發光裝置100d中。 FIG. 4A is a schematic top view of a light emitting device according to another embodiment of the present invention. 4B is a cross-sectional view taken along line D-D of FIG. 4A. Referring to FIG. 4A and FIG. 4B, the light-emitting device 100d of the present embodiment is similar to the light-emitting device 100a of FIG. 1A and FIG. 1B, but the main difference between the two is that the package 130d of the present embodiment is more coated with the first The electrode 126d and the second electrode 128d expose the upper surface of the electrode, and the package 130d fills the interval d between the first electrode 126d and the second electrode 128d, wherein the sidewall of the first electrode extension 126d2 and the second electrode The side wall of the extension portion 128d2 is also covered by the package body 130d. Further, the edge of the first electrode extension portion 126d2 and the edge of the second electrode extension portion 128d2 are contracted to the edge of the package body 130d and the edge of the light transmission layer 110. A first upper surface S1 of the first electrode extension portion 126d2 and a second upper surface S2 of the second electrode extension portion 128d2 are substantially coplanar with the upper surface 132d of the package body 130d. That is, the first electrode extension portion 126d2 is disposed on the first electrode portion 126d1, and the first upper surface S1 of the first electrode extension portion 126d2 is substantially coplanar with the upper surface 132d of the package body 130d. The second electrode extension portion 128d2 is disposed on the second electrode portion 128d1, and the second upper surface S2 of the second electrode extension portion 128d2 is substantially coplanar with the upper surface 132d of the package body 130d. In this way, when the light emitting device 100d is electrically connected to an external circuit (not shown), the design of the first electrode 126d and the second electrode 128d of the light emitting unit 120d can be made. The optical device 100d does not assemble a gap at the time of assembly, and can effectively prevent moisture and oxygen from entering the light-emitting device 100d.

圖5A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖。圖5B繪示為沿圖5A的線E-E的剖面示意圖。請同時參考圖5A與圖5B,本實施例的發光裝置100e與圖4A及圖4B中的發光裝置100d相似,惟二者主要差異之處在於:本實施例的第一電極延伸部126e2與第一電極部126e1之間為無接縫連接,而第二電極延伸部128e2與第二電極部128e1之間為無接縫連接。也就是說,發光單元120e的第一電極126e的第一電極延伸部126e2與第一電極部126e1一體成型,而第一電極128e的第二電極延伸部128e2與第二電極部128e1一體成型,如此可使發光裝置100e結構完整度較佳,具有較好的信賴性。 FIG. 5A is a schematic top view of a light emitting device according to another embodiment of the present invention. FIG. 5B is a cross-sectional view taken along line E-E of FIG. 5A. 5A and FIG. 5B, the light-emitting device 100e of the present embodiment is similar to the light-emitting device 100d of FIGS. 4A and 4B, but the main difference between the two is that the first electrode extension portion 126e2 and the first embodiment of the present embodiment The one electrode portion 126e1 is seamlessly connected, and the second electrode extending portion 128e2 and the second electrode portion 128e1 are seamlessly connected. That is, the first electrode extension portion 126e2 of the first electrode 126e of the light emitting unit 120e is integrally formed with the first electrode portion 126e1, and the second electrode extension portion 128e2 of the first electrode 128e is integrally formed with the second electrode portion 128e1, The structure of the light-emitting device 100e can be better and has better reliability.

圖6A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖。圖6B繪示為沿圖6A的線F-F的剖面示意圖。請同時參考圖6A與圖6B,本實施例的發光裝置100f與圖4A及圖4B中的發光裝置100d相似,惟二者主要差異之處在於:本實施例的第一電極延伸部126f2的邊緣與第二電極延伸部128f2的邊緣切齊於封裝體130f的邊緣以及透光單元110的邊緣,而未被封裝體130f包覆。此時,發光單元120f的第一電極延伸部126f2配置於第一電極部126f1上,且第一電極延伸部126f2的第一上表面S1’與封裝體130f的上表面132f實質上共平面。發光單元120f的第二電極延伸部128f2配置於第二電極部128f1上,且第二電極延伸部 128f2的第二上表面S2’與封裝體130f的上表面132f實質上共平面。 FIG. 6A is a schematic top view of a light emitting device according to another embodiment of the present invention. 6B is a cross-sectional view taken along line F-F of FIG. 6A. Referring to FIG. 6A and FIG. 6B simultaneously, the light-emitting device 100f of the present embodiment is similar to the light-emitting device 100d of FIGS. 4A and 4B, but the main difference is that the edge of the first electrode extension portion 126f2 of the present embodiment The edge of the second electrode extending portion 128f2 is aligned with the edge of the package body 130f and the edge of the light transmitting unit 110 without being covered by the package body 130f. At this time, the first electrode extension portion 126f2 of the light emitting unit 120f is disposed on the first electrode portion 126f1, and the first upper surface S1' of the first electrode extension portion 126f2 is substantially coplanar with the upper surface 132f of the package body 130f. The second electrode extension portion 128f2 of the light emitting unit 120f is disposed on the second electrode portion 128f1, and the second electrode extension portion The second upper surface S2' of 128f2 is substantially coplanar with the upper surface 132f of the package 130f.

圖7A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖。圖7B繪示為沿圖7A的線G-G的剖面示意圖。請同時參考圖7A與圖7B,本實施例的發光裝置100g與圖6A及圖6B中的發光裝置100f相似,惟二者主要差異之處在於:本實施例的第一電極延伸部126g2與第一電極部126g1之間為無接縫連接,而第二電極延伸部128g2與第二電極部128g1之間為無接縫連接。也就是說,發光單元120g的第一電極126g的第一電極延伸部126g2與第一電極部126g1一體成型,而第一電極128g的第二電極延伸部128g2與第二電極部128g1一體成型。 FIG. 7A is a schematic top view of a light emitting device according to another embodiment of the present invention. FIG. 7B is a cross-sectional view taken along line G-G of FIG. 7A. Referring to FIG. 7A and FIG. 7B simultaneously, the light-emitting device 100g of the present embodiment is similar to the light-emitting device 100f of FIGS. 6A and 6B, but the main difference between the two is that the first electrode extension portion 126g2 and the first embodiment of the present embodiment The one electrode portion 126g1 is seamlessly connected, and the second electrode extending portion 128g2 and the second electrode portion 128g1 are seamlessly connected. That is, the first electrode extension portion 126g2 of the first electrode 126g of the light emitting unit 120g is integrally formed with the first electrode portion 126g1, and the second electrode extension portion 128g2 of the first electrode 128g is integrally formed with the second electrode portion 128g1.

圖8A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖。圖8B繪示為沿圖8A的線H-H的剖面示意圖。請同時參考圖8A與圖8B,本實施例的發光裝置100h與圖7A及圖7B中的發光裝置100g相似,惟二者主要差異之處在於:本實施例的發光單元120h的第一電極126h更包括連接第一電極部126h1與第一電極延伸部126h2的一第一連接部126h3。第一連接部126h3的延伸方向垂直於第一電極部126h1的延伸方向與第一電極延伸部126h2的延伸方向。第一電極部126h1、第一連接部126h3以及第一電極延伸部126h2之間可以是無接縫連接。發光單元120h的第二電極128h更包括連接第二電極部128h1與第二電極延伸部128h2的一第二連接部128h3。第二連接部128h3的延伸方向垂直 於第二電極部128h1的延伸方向與第二電極延伸部128h2的延伸方向。第二電極部128h1、第二連接部128h3以及第二電極延伸部128h2之間可以是無接縫連接。第一電極延伸部126h2的第一上表面S1”、第二電極延伸部128h2的第二上表面S2”與封裝體130h的上表面132h實質上共平面。封裝體130h填滿第一電極126h與第二電極128h之間的間隔d。此處,第一電極延伸部126h2的邊緣與第二電極延伸部128h2的邊緣切齊於封裝體130h的邊緣以及透光層110的邊緣。 FIG. 8A is a schematic top view of a light emitting device according to another embodiment of the present invention. FIG. 8B is a cross-sectional view taken along line H-H of FIG. 8A. Referring to FIG. 8A and FIG. 8B, the light-emitting device 100h of the present embodiment is similar to the light-emitting device 100g of FIGS. 7A and 7B, but the main difference is that the first electrode 126h of the light-emitting unit 120h of the present embodiment Further, a first connecting portion 126h3 connecting the first electrode portion 126h1 and the first electrode extending portion 126h2 is further included. The extending direction of the first connecting portion 126h3 is perpendicular to the extending direction of the first electrode portion 126h1 and the extending direction of the first electrode extending portion 126h2. The first electrode portion 126h1, the first connecting portion 126h3, and the first electrode extending portion 126h2 may be seamlessly connected. The second electrode 128h of the light emitting unit 120h further includes a second connecting portion 128h3 that connects the second electrode portion 128h1 and the second electrode extending portion 128h2. The extending direction of the second connecting portion 128h3 is vertical The extending direction of the second electrode portion 128h1 and the extending direction of the second electrode extending portion 128h2. The second electrode portion 128h1, the second connecting portion 128h3, and the second electrode extending portion 128h2 may be seamlessly connected. The first upper surface S1" of the first electrode extension portion 126h2 and the second upper surface S2" of the second electrode extension portion 128h2 are substantially coplanar with the upper surface 132h of the package body 130h. The package body 130h fills the interval d between the first electrode 126h and the second electrode 128h. Here, the edge of the first electrode extension portion 126h2 is aligned with the edge of the second electrode extension portion 128h2 at the edge of the package body 130h and the edge of the light transmission layer 110.

圖9A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖。圖9B繪示為沿圖9A的線I-I的剖面示意圖。請同時參考圖9A與圖9B,本實施例的發光裝置100i與圖8A及圖8B中的發光裝置100h相似,惟二者主要差異之處在於:本實施例的第一電極延伸部126i2的側壁與第二電極延伸部128i2的側壁被封裝體130i所包覆。也就是說,本實施例的發光單元120i的第一電極126i、第二電極128i、磊晶結構層124以及基板122被封裝體130i所封裝,但暴露出上述電極的上表面。此處,第一電極126i的第一電極延伸部126i2透過第一連接部126i3與第一電極部126i1相連接,且第一電極延伸部126i2的第一表面S1’’’與封裝體130i的上表面132i實質上共平面。而,第二電極128i的第二電極延伸部128i2透過第二連接部128i3與第二電極部128i1相連接,且第二電極延伸部128i2的第二表面S2’’’與封裝體130i的上表面132i實質上共平面。 FIG. 9A is a schematic top view of a light emitting device according to another embodiment of the present invention. 9B is a cross-sectional view taken along line I-I of FIG. 9A. Referring to FIG. 9A and FIG. 9B simultaneously, the light-emitting device 100i of the present embodiment is similar to the light-emitting device 100h of FIGS. 8A and 8B, but the main difference between the two is that the sidewall of the first electrode extension portion 126i2 of the present embodiment The side wall of the second electrode extension portion 128i2 is covered by the package body 130i. That is, the first electrode 126i, the second electrode 128i, the epitaxial structure layer 124, and the substrate 122 of the light emitting unit 120i of the present embodiment are encapsulated by the package 130i, but the upper surface of the above electrode is exposed. Here, the first electrode extension portion 126i2 of the first electrode 126i is connected to the first electrode portion 126i1 through the first connection portion 126i3, and the first surface S1"" of the first electrode extension portion 126i2 and the upper surface of the package body 130i Surface 132i is substantially coplanar. The second electrode extension 128i2 of the second electrode 128i is connected to the second electrode portion 128i1 through the second connection portion 128i3, and the second surface S2"" of the second electrode extension portion 128i2 and the upper surface of the package body 130i. 132i is substantially coplanar.

圖10A繪示為本發明的另一實施例的一種發光裝置(發光二極體封裝)的俯視示意圖,而圖10B繪示為沿圖10A的線J-J的剖面示意圖。請參照圖10A與圖10B,本實施例之發光裝置(發光二極體封裝)100j類似於圖1A的發光二極體封裝100a,而兩者的差異如下所述。在本實施例之發光二極體封裝100j中,第一電極延伸部126j2包括多個彼此分離的第一子電極126j21、126j22,且第二電極延伸部128j2包括多個彼此分離的第二子電極128j21、128j22。在本實施例中,這些第一子電極126j21、126j22位於封裝體的二相鄰角落,且這些第二子電極128j21、128j22位於封裝體的另二相鄰角落。換言之,這些第一子電極126j21、126j22由第一電極部126j1邊緣朝向遠離第二電極部128j1的方向延伸,且這些第二子電極128j21、128j22由第二電極部128j1的邊緣朝向遠離第一電極部126j1的方向延伸,因而這些子電極126j21、126j22、128j21、128j22分別延伸於發光裝置100j上表面的的四個角落。另外,在本實施例中,封裝體130j封裝第一電極部126j1與第二電極部128j1,而這些子電極126j21、126j22、128j21、128j22延伸至並覆蓋在封裝體130j上。在本實施例中,發光二極體封裝100j可更包括透光層110,而封裝體130j配置於透光層110上。相較於圖1B,圖10B只是繪示了將發光二極體封裝100j翻轉過來,以利於覆晶接合的情形。 FIG. 10A is a top plan view of a light emitting device (light emitting diode package) according to another embodiment of the present invention, and FIG. 10B is a cross-sectional view taken along line J-J of FIG. 10A. Referring to FIG. 10A and FIG. 10B, the light-emitting device (light-emitting diode package) 100j of the present embodiment is similar to the light-emitting diode package 100a of FIG. 1A, and the difference between the two is as follows. In the light emitting diode package 100j of the present embodiment, the first electrode extension portion 126j2 includes a plurality of first sub-electrodes 126j21, 126j22 separated from each other, and the second electrode extension portion 128j2 includes a plurality of second sub-electrodes separated from each other. 128j21, 128j22. In this embodiment, the first sub-electrodes 126j21, 126j22 are located at two adjacent corners of the package, and the second sub-electrodes 128j21, 128j22 are located at two adjacent corners of the package. In other words, the first sub-electrodes 126j21, 126j22 extend from the edge of the first electrode portion 126j1 toward the direction away from the second electrode portion 128j1, and the second sub-electrodes 128j21, 128j22 are directed away from the first electrode by the edge of the second electrode portion 128j1 The direction of the portion 126j1 extends, and thus the sub-electrodes 126j21, 126j22, 128j21, 128j22 extend respectively at the four corners of the upper surface of the light-emitting device 100j. In addition, in the embodiment, the package body 130j encapsulates the first electrode portion 126j1 and the second electrode portion 128j1, and the sub-electrodes 126j21, 126j22, 128j21, 128j22 extend to and cover the package body 130j. In this embodiment, the LED package 100j may further include a light transmissive layer 110, and the package body 130j is disposed on the light transmissive layer 110. Compared with FIG. 1B, FIG. 10B only illustrates the case where the LED package 100j is turned over to facilitate flip chip bonding.

在本實施例之發光二極體封裝100j中,由於配置於發光二極體封裝100j上表面的四個角落的這些子電極126j21、126j22、 128j21、128j22可分別藉由四個錫膏接合至電路板,而四個配置於四個角落的錫膏在回焊(reflow)時可以分散應力。如此一來,當發光二極體封裝100j接合至電路板而冷卻後,不至於對於預設位置偏轉一個角度,進而確保接合製程的良率。 In the light-emitting diode package 100j of the present embodiment, the sub-electrodes 126j21, 126j22 disposed at four corners of the upper surface of the LED package 100j, The 128j21 and 128j22 can be bonded to the circuit board by four solder pastes respectively, and the four solder pastes disposed at the four corners can be dispersed in stress during reflow. In this way, when the LED package 100j is bonded to the circuit board and cooled, it is not deflected by an angle for the preset position, thereby ensuring the yield of the bonding process.

圖11A繪示為本發明的另一實施例的一種發光二極體封裝的俯視示意圖,而圖11B繪示為沿圖11A的線K-K的剖面示意圖。請參照圖11A與圖11B,本實施例之發光二極體封裝100k類似於圖10A與圖10B的發光二極體封裝100j,而兩者的差異如下所述。在本實施例之發光二極體封裝100k中,第一電極延伸部126j2的第一子電極126j21、126j22覆蓋第一電極部126j1的面積較小,其分別覆蓋第一電極部126j1之兩個相鄰角落,這兩個相鄰角落分別靠近發光二極體封裝100k上表面的兩個相鄰角落。此外,第二電極延伸部128j2的第二子電極128j21、128j22覆蓋第二電極部128j1的面積較小,其分別覆蓋第二電極部128j1之兩個相鄰角落,這兩個相鄰角落分別靠近發光二極體封裝100k上表面的兩個相鄰角落。 FIG. 11A is a top plan view of a light emitting diode package according to another embodiment of the present invention, and FIG. 11B is a cross-sectional view along line K-K of FIG. 11A. Referring to FIG. 11A and FIG. 11B, the LED package 100k of the present embodiment is similar to the LED package 100j of FIGS. 10A and 10B, and the difference between the two is as follows. In the LED package 100k of the present embodiment, the first sub-electrodes 126j21, 126j22 of the first electrode extension portion 126j2 cover the first electrode portion 126j1 with a small area, which respectively cover the two phases of the first electrode portion 126j1. Adjacent corners are respectively adjacent to two adjacent corners of the upper surface of the LED package 100k. In addition, the second sub-electrodes 128j21, 128j22 of the second electrode extension portion 128j2 cover the second electrode portion 128j1 with a smaller area, which respectively cover two adjacent corners of the second electrode portion 128j1, and the two adjacent corners are respectively close to each other. Two adjacent corners of the upper surface of the LED package 100k.

圖12A繪示為本發明的另一實施例的一種發光二極體封裝的俯視示意圖,而圖12B繪示為沿圖12A的線L-L的發光二極體封裝以覆晶方式接合至電路板剖面示意圖。請參照圖12A與圖12B,本實施例之發光二極體封裝100l類似於圖11A與圖11B的發光二極體封裝100k,而兩者的差異如下所述。在本實施例之發光二極體封裝100l中,第一電極延伸部126l2的這些第一子電極 126l21~126l28分為二個第一子電極組126la、126lb,每一第一子電極組126la、126lb分別包括部分複數個第一子電極。舉例而言,如圖所示,第一子電極組126la包括四個第一子電極126l21-126l24,而第一子電極組126lb包括四個第一子電極126l25-126l28。此外,第二電極延伸部128l2的這些第二子電極128l21~128l28分為二個第二子電極組128la、128lb,每一第二子電極組128la、128lb分別包括部分複數個第二子電極。舉例而言,如圖所示,第二子電極組128la包括四個第二子電極128l21-128l24,而第二子電極組128lb包括四個第二子電極128l25-128l28。在本實施例中,此二個第一子電極組126la、126lb分別配置於發光二極體封裝100l上表面的二相鄰角落,且此二個第二子電極組128la、128lb分別配置於發光二極體封裝100l上表面的另二相鄰角落。 12A is a top plan view of a light emitting diode package according to another embodiment of the present invention, and FIG. 12B is a flip-chip bonding to a circuit board profile along the line LL of FIG. 12A. schematic diagram. Referring to FIG. 12A and FIG. 12B, the LED package 1001 of the present embodiment is similar to the LED package 100k of FIGS. 11A and 11B, and the difference between the two is as follows. In the LED package 1001 of the present embodiment, the first sub-electrodes of the first electrode extensions 1261 are 126l21~126l28 are divided into two first sub-electrode groups 126la, 126lb, and each of the first sub-electrode groups 126la, 126lb includes a plurality of first sub-electrodes. For example, as shown, the first set of sub-electrodes 126la includes four first sub-electrodes 1261 21 -12614, while the first set of sub-electrodes 126 lb includes four first sub-electrodes 126l - 126l28. In addition, the second sub-electrodes 128l21~128l28 of the second electrode extension portion 12812 are divided into two second sub-electrode groups 128la, 128lb, and each of the second sub-electrode groups 128la, 128lb includes a plurality of second sub-electrodes. For example, as shown, the second sub-electrode group 128la includes four second sub-electrodes 128l21-128l24, and the second sub-electrode group 128lb includes four second sub-electrodes 128l25-128l28. In this embodiment, the two first sub-electrode groups 126a and 126 lb are respectively disposed at two adjacent corners of the upper surface of the LED package 1001, and the two second sub-electrode groups 128la and 128lb are respectively disposed in the illuminating The other adjacent corners of the upper surface of the diode package 100l.

發光裝置100l可藉由覆晶接合的方式接合於電路板50。舉例而言,兩個第一子電極組126la、126lb分別透過兩個固化後的錫膏60接合至電路板50上的電極墊52(如圖12B所繪示位於左方的電極墊52),且兩個第二子電極組128la、128lb分別透過兩個固化後的錫膏60接合至電路板50上的電極墊52(如圖12B所繪示位於右方的電極墊52)。由於錫膏60在固化前可填入相鄰兩子電極間的間隙,因此錫膏60與第一子電極126l21-126l28的接合力及錫膏60與第二子電極128l21-128l28的接合力可以被有效地提升,進而提升發光裝置100l接合至電路板50的可靠度。 The light emitting device 1001 can be bonded to the circuit board 50 by flip chip bonding. For example, the two first sub-electrode groups 126a, 126lb are respectively bonded to the electrode pads 52 on the circuit board 50 through two cured solder pastes 60 (as shown in FIG. 12B on the left electrode pads 52). The two second sub-electrode groups 128la, 128lb are respectively bonded to the electrode pads 52 on the circuit board 50 through two cured solder pastes 60 (as shown in FIG. 12B on the right electrode pads 52). Since the solder paste 60 can be filled into the gap between the adjacent two sub-electrodes before curing, the bonding force of the solder paste 60 and the first sub-electrode 126l21-126l28 and the bonding force between the solder paste 60 and the second sub-electrode 128l21-128l28 can be It is effectively lifted, thereby improving the reliability of the light-emitting device 1001 being bonded to the circuit board 50.

圖13繪示為本發明的另一實施例的一種發光裝置的俯視示意圖。請參照圖13,本實施例之發光裝置100m類似於圖10A之發光裝置100j,而兩者的差異如下所述。在本實施例之發光裝置100m中,第一電極延伸部126m2的第一子電極126m21、126m23分別配置於發光裝置100m上表面的相鄰兩角落,而第一子電極126m22配置於第一子電極126m21與第一子電極126m23之間。此外,第二電極延伸部128m2的第二子電極128m21、128m23分別配置於發光裝置100m上表面的另二相鄰角落,而第二子電極128m22配置於第二子電極128m21與第二子電極128m23之間。 FIG. 13 is a schematic top plan view of a light emitting device according to another embodiment of the present invention. Referring to FIG. 13, the light-emitting device 100m of the present embodiment is similar to the light-emitting device 100j of FIG. 10A, and the difference between the two is as follows. In the light-emitting device 100m of the present embodiment, the first sub-electrodes 126m21 and 126m23 of the first electrode extension portion 126m2 are respectively disposed at adjacent corners of the upper surface of the light-emitting device 100m, and the first sub-electrode 126m22 is disposed at the first sub-electrode. Between 126m21 and the first sub-electrode 126m23. In addition, the second sub-electrodes 128m21 and 128m23 of the second electrode extension portion 128m2 are respectively disposed at the other adjacent corners of the upper surface of the light-emitting device 100m, and the second sub-electrode 128m22 is disposed on the second sub-electrode 128m21 and the second sub-electrode 128m23. between.

在本發明的其他實施例中,第一子電極與第二子電極的數量與配置方式亦可以是其他各種方式,本發明不以此為限。 In other embodiments of the present invention, the number and arrangement of the first sub-electrode and the second sub-electrode may be other various manners, and the invention is not limited thereto.

圖14繪示為本發明的另一實施例的一種發光裝置的剖面示意圖。請參照圖14,本實施例之發光裝置100n與圖1B之發光裝置100a類似,而兩者的差異如下所述。在本實施例中,發光裝置100n更包括一反射層140n,至少配置於封裝體130a的上表面132a上。在本實施例中,至少部分反射層140n配置於第一電極126a與封裝體130a的上表面132a之間,且配置於第二電極128a與封裝體130a的上表面132a之間。具體而言,反射層140n可配置於第一電極延伸部126a2與封裝體130a的上表面132a之間,且配置於第二電極延伸部128a2與封裝體130a的上表面132a之間。反射層140n例如為金、鋁、銀、鎳、鈦、布拉格反射鏡、摻有具高反射率的反射粒子的樹脂層(例如矽膠層或環氧樹脂層)或 其組合。反射層140n可將發光單元120a所發出的光往透光層110的方向反射,以使光較有效率地從透光層110側出光。當反射層140n是由絕緣材料形成時,反射層140n可連成一片而覆蓋整個封裝體130a的上表面132a。然而,當反射層140n為導電材質或金屬材質時,反射層140n配置於第一電極延伸部126a2下的部分要與反射層140n配置於第二電極延伸部128a2下的部分分開,以避免短路。 FIG. 14 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention. Referring to FIG. 14, the light-emitting device 100n of the present embodiment is similar to the light-emitting device 100a of FIG. 1B, and the difference between the two is as follows. In this embodiment, the light emitting device 100n further includes a reflective layer 140n disposed on at least the upper surface 132a of the package body 130a. In this embodiment, at least a portion of the reflective layer 140n is disposed between the first electrode 126a and the upper surface 132a of the package body 130a, and is disposed between the second electrode 128a and the upper surface 132a of the package body 130a. Specifically, the reflective layer 140n may be disposed between the first electrode extension portion 126a2 and the upper surface 132a of the package body 130a, and disposed between the second electrode extension portion 128a2 and the upper surface 132a of the package body 130a. The reflective layer 140n is, for example, gold, aluminum, silver, nickel, titanium, a Bragg mirror, a resin layer (for example, a silicone layer or an epoxy layer) doped with reflective particles having high reflectivity or Its combination. The reflective layer 140n can reflect the light emitted by the light emitting unit 120a toward the light transmitting layer 110, so that the light is efficiently emitted from the light transmitting layer 110 side. When the reflective layer 140n is formed of an insulating material, the reflective layer 140n may be connected in a single piece to cover the upper surface 132a of the entire package 130a. However, when the reflective layer 140n is made of a conductive material or a metal material, a portion of the reflective layer 140n disposed under the first electrode extension portion 126a2 is to be separated from a portion of the reflective layer 140n disposed under the second electrode extension portion 128a2 to avoid a short circuit.

圖15A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖,而圖15B繪示為沿圖15A的線M-M的發光裝置的剖面示意圖。請參照圖15A與圖15B,本實施例之發光裝置100p與圖6A及圖6B的發光裝置100f類似,而兩者的差異如下所述。在本實施例之發光裝置100p中,第一電極126p與第二電極128p由磊晶結構層124上向上延伸而凸出於封裝體130a的上表面132a。在本實施例中,第一電極126p與第二電極128p皆不覆蓋封裝體130a的上表面132a。 FIG. 15A is a schematic top view of a light emitting device according to another embodiment of the present invention, and FIG. 15B is a cross-sectional view of the light emitting device along line M-M of FIG. 15A. Referring to FIGS. 15A and 15B, the light-emitting device 100p of the present embodiment is similar to the light-emitting device 100f of FIGS. 6A and 6B, and the differences between the two are as follows. In the light-emitting device 100p of the present embodiment, the first electrode 126p and the second electrode 128p are extended upward from the epitaxial structure layer 124 to protrude from the upper surface 132a of the package 130a. In this embodiment, neither the first electrode 126p nor the second electrode 128p covers the upper surface 132a of the package 130a.

具體而言,第一電極126p的第一電極延伸部126p2位於第一電極部126a1上且凸出於封裝體130a的上表面132a,第二電極128p的第二電極延伸部128p2位於第二電極部128a1上且凸出於封裝體130a的上表面132a。在本實施例中,第一電極延伸部126p2與第二電極延伸部128p2皆不覆蓋封裝體130a的上表面132a,且兩者實質上共平面。在其他實施例中,第一電極126p與第二電極128p也可以是由磊晶結構層124上向上延伸而不凸出於 封裝體130a的上表面132a。舉例而言,第一電極延伸部126p2的上表面(即背對磊晶結構層124的表面)、第二電極延伸部128p2的上表面(即背對磊晶結構層124的表面)與封裝體130a的上表面132a可以實質上共平面。 Specifically, the first electrode extension portion 126p2 of the first electrode 126p is located on the first electrode portion 126a1 and protrudes from the upper surface 132a of the package body 130a, and the second electrode extension portion 128p2 of the second electrode 128p is located at the second electrode portion. The upper surface 132a of the package 130a protrudes from the 128a1. In this embodiment, neither the first electrode extension portion 126p2 nor the second electrode extension portion 128p2 covers the upper surface 132a of the package body 130a, and both are substantially coplanar. In other embodiments, the first electrode 126p and the second electrode 128p may also extend upward from the epitaxial structure layer 124 without protruding. The upper surface 132a of the package body 130a. For example, the upper surface of the first electrode extension portion 126p2 (ie, the surface facing away from the epitaxial structure layer 124), the upper surface of the second electrode extension portion 128p2 (ie, the surface facing away from the epitaxial structure layer 124), and the package body The upper surface 132a of 130a can be substantially coplanar.

在本實施例中,藉由第一電極延伸部126p2與第二電極延伸部128p2使第一電極126p與第二電極128p增高,將有助於固晶接合製程的進行。 In the present embodiment, increasing the first electrode 126p and the second electrode 128p by the first electrode extension portion 126p2 and the second electrode extension portion 128p2 will contribute to the progress of the bonding bonding process.

圖16A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖,而圖16B繪示為沿圖16A的線N-N的發光裝置的剖面示意圖。本實施例之發光裝置100q類似於發光裝置100p,而兩者的差異如下所述。在本實施例之發光裝置100q中,向上延伸的第一電極延伸部包括多個彼此分離的第一子電極126q2,且向上延伸的第二電極延伸部包括多個彼此分離的第二子電極128q2。 FIG. 16A is a schematic top view of a light emitting device according to another embodiment of the present invention, and FIG. 16B is a cross-sectional view of the light emitting device taken along line N-N of FIG. 16A. The light-emitting device 100q of the present embodiment is similar to the light-emitting device 100p, and the difference between the two is as follows. In the light-emitting device 100q of the present embodiment, the upwardly extending first electrode extension portion includes a plurality of first sub-electrodes 126q2 separated from each other, and the upwardly extending second electrode extension portion includes a plurality of second sub-electrodes 128q2 separated from each other. .

圖17A繪示為本發明的另一實施例的一種發光裝置的俯視示意圖,而圖17B繪示為沿圖17A的線P-P的發光裝置的剖面示意圖。請參照圖17A與圖17B,本實施例之發光裝置100r類似於發光裝置100q,而兩者的差異在於:發光裝置100q的第一子電極126q2與第二子電極128q2為層狀電極,而本實施例之發光裝置100r的第一子電極126r2與第二子電極128r2為球狀電極,其可利用植球技術來形成。 17A is a top plan view of a light emitting device according to another embodiment of the present invention, and FIG. 17B is a cross-sectional view of the light emitting device along line P-P of FIG. 17A. Referring to FIG. 17A and FIG. 17B, the light-emitting device 100r of the present embodiment is similar to the light-emitting device 100q, and the difference between the two is that the first sub-electrode 126q2 and the second sub-electrode 128q2 of the light-emitting device 100q are layered electrodes. The first sub-electrode 126r2 and the second sub-electrode 128r2 of the illuminating device 100r of the embodiment are spherical electrodes, which can be formed by a ball placement technique.

圖18A繪示為圖1B之發光裝置以覆晶方式接合至電路板剖面示意圖,而圖18B繪示圖18A中區域M1的局部放大圖。請 參照圖18A與圖18B,發光裝置100a可藉由覆晶接合的方式接合於電路板50。舉例而言,第一電極延伸部126a2與第二電極延伸部128a2分別透過兩個固化後的錫膏60接合至電路板50上的兩個電極墊52。 FIG. 18A is a cross-sectional view showing the light-emitting device of FIG. 1B joined to the circuit board in a flip-chip manner, and FIG. 18B is a partially enlarged view of the region M1 in FIG. 18A. please Referring to FIGS. 18A and 18B, the light-emitting device 100a can be bonded to the circuit board 50 by flip-chip bonding. For example, the first electrode extension portion 126a2 and the second electrode extension portion 128a2 are respectively bonded to the two electrode pads 52 on the circuit board 50 through the two cured solder pastes 60.

在本實施例中,第一電極延伸部126a2與第二電極延伸部128a2各包括一接著層L1及一配置於接著層L1與封裝體130a之間的阻障層L2。接著層的材質包括金、錫、鋁、銀、銅、銦、鉍、鉑、金錫合金、錫銀合金、錫銀銅合金(SAC alloy)或其組合,且阻障層的材質包括鎳、鈦、鵭、金或其組合之合金。接著層L1有利於與錫膏60接合,而阻障層L2可有效避免錫膏60的材料在接合製程中侵入封裝體130a而污染了發光裝置100a。 In this embodiment, the first electrode extension portion 126a2 and the second electrode extension portion 128a2 each include an adhesion layer L1 and a barrier layer L2 disposed between the adhesion layer L1 and the package body 130a. The material of the subsequent layer includes gold, tin, aluminum, silver, copper, indium, bismuth, platinum, gold tin alloy, tin silver alloy, tin alloy copper alloy (SAC alloy) or a combination thereof, and the material of the barrier layer includes nickel, An alloy of titanium, tantalum, gold or a combination thereof. The layer L1 is then advantageously bonded to the solder paste 60, and the barrier layer L2 is effective to prevent the material of the solder paste 60 from intruding into the package 130a during the bonding process to contaminate the light emitting device 100a.

在本實施例中,第一電極延伸部126a2與第二電極延伸部128a2各更包括一反射層L3,至少配置於阻障層L2與封裝體130a之間。反射層L3可反射來自磊晶結構層124的光,以提升光利用率。在本實施例中,反射層L3的材質包括金、鋁、銀、鎳、鈦或其組合之合金。 In this embodiment, the first electrode extension portion 126a2 and the second electrode extension portion 128a2 further include a reflective layer L3 disposed at least between the barrier layer L2 and the package body 130a. The reflective layer L3 can reflect light from the epitaxial structure layer 124 to enhance light utilization. In this embodiment, the material of the reflective layer L3 includes an alloy of gold, aluminum, silver, nickel, titanium or a combination thereof.

綜上所述,由於本發明的發光單元的第一電極與第二電極是從磊晶結構層上向外延伸並覆蓋於封裝體上,也就是說,本發明的發光裝置可具有較大的電極面積,且當後續欲組裝至一外部電路上時,亦可有效提高組裝時的對位精準度。由於本發明的一實施例的發光單元的第一電極與第二電極是從磊晶結構層上向上延伸而凸出於封裝體,因此有利於後續的固晶接合製程。 In summary, since the first electrode and the second electrode of the light-emitting unit of the present invention extend outward from the epitaxial structure layer and cover the package, that is, the light-emitting device of the present invention can have a larger The electrode area, and when subsequently assembled to an external circuit, can also effectively improve the alignment accuracy during assembly. Since the first electrode and the second electrode of the light-emitting unit of the embodiment of the present invention extend upward from the epitaxial structure layer and protrude from the package, the subsequent die bonding process is facilitated.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100a‧‧‧發光裝置 100a‧‧‧Lighting device

110‧‧‧透光層 110‧‧‧Transparent layer

120a‧‧‧發光單元 120a‧‧‧Lighting unit

122‧‧‧基板 122‧‧‧Substrate

124‧‧‧磊晶結構層 124‧‧‧ epitaxial structure layer

125‧‧‧表面 125‧‧‧ surface

126a‧‧‧第一電極 126a‧‧‧first electrode

126a1‧‧‧第一電極部 126a1‧‧‧First electrode

126a2‧‧‧第一電極延伸部 126a2‧‧‧First electrode extension

128a‧‧‧第二電極 128a‧‧‧second electrode

128a1‧‧‧第二電極部 128a1‧‧‧Second electrode

128a2‧‧‧第二電極延伸部 128a2‧‧‧Second electrode extension

130a‧‧‧封裝體 130a‧‧‧Package

132a‧‧‧上表面 132a‧‧‧ upper surface

134a‧‧‧波長轉換材料 134a‧‧‧wavelength conversion material

d‧‧‧間隔 D‧‧‧ interval

Claims (96)

一種發光裝置,包括:一發光單元,包括一基板;一磊晶結構層,配置於該基板上;以及一第一電極與第二電極,分別配置於該磊晶結構層的同一側上;一透光層,該發光單元配置於該透光層上且至少曝露該第一電極及該第二電極;以及一封裝體,封裝該發光單元並至少曝露部分該第一電極及部分該第二電極,該第一電極與該第二電極分別由該磊晶結構層上向外延伸且分別覆蓋至少該封裝體的部分上表面。 A light-emitting device comprising: a light-emitting unit comprising a substrate; an epitaxial structure layer disposed on the substrate; and a first electrode and a second electrode respectively disposed on the same side of the epitaxial structure layer; a light-transmitting layer disposed on the light-transmitting layer and exposing at least the first electrode and the second electrode; and a package encapsulating the light-emitting unit and exposing at least a portion of the first electrode and a portion of the second electrode The first electrode and the second electrode respectively extend outward from the epitaxial structure layer and respectively cover at least a part of the upper surface of the package. 如申請專利範圍第1項所述的發光裝置,其中該第一電極包括連接該磊晶結構層的一第一電極部以及連接該第一電極部的一第一電極延伸部,而該第二電極包括連接該磊晶結構層的一第二電極部以及連接該第二電極部的一第二電極延伸部,該第一電極延伸部與該第二電極延伸部分別向外延伸於至少部分該封裝體的上表面。 The illuminating device of claim 1, wherein the first electrode comprises a first electrode portion connecting the epitaxial structure layer and a first electrode extension portion connecting the first electrode portion, and the second electrode The electrode includes a second electrode portion connected to the epitaxial structure layer and a second electrode extension portion connected to the second electrode portion, the first electrode extension portion and the second electrode extension portion respectively extending outwardly at least part of the The upper surface of the package. 如申請專利範圍第2項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部切齊於或內縮於該封裝體的上表面的邊緣。 The illuminating device of claim 2, wherein the first electrode extension and the second electrode extension are aligned or contracted at an edge of an upper surface of the package. 如申請專利範圍第2項所述的發光裝置,其中該第一電極 部與該第二電極部切齊於或內縮於該磊晶結構層的邊緣。 The illuminating device of claim 2, wherein the first electrode The portion is aligned with or constricted to the edge of the epitaxial structure layer. 如申請專利範圍第1項所述的發光裝置,還包括一或多個平坦的表面,每一平坦的表面包括該透光層及該封裝體。 The illuminating device of claim 1, further comprising one or more flat surfaces, each flat surface comprising the light transmissive layer and the package. 如申請專利範圍第2項所述的發光裝置,其中該第一電極延伸部包括多個第一柵狀電極,而該第二電極延伸部包括多個第二柵狀電極,該些第一柵狀電極分布在該第一電極部與該封裝體的部分上表面上,該些第二柵狀電極分布在該第二電極部與該封裝體的部分上表面上。 The illuminating device of claim 2, wherein the first electrode extension comprises a plurality of first grid electrodes, and the second electrode extension comprises a plurality of second grid electrodes, the first grids The electrodes are distributed on the first electrode portion and a portion of the upper surface of the package, and the second grid electrodes are distributed on the second electrode portion and a portion of the upper surface of the package. 如申請專利範圍第2項所述的發光裝置,其中至少部分該第一電極延伸部由第一電極部的邊緣往遠離該第二電極部的方向延伸,且至少部分該第二電極延伸部由該第二電極部的邊緣往遠離該第一電極部的方向延伸。 The illuminating device of claim 2, wherein at least a portion of the first electrode extending portion extends from an edge of the first electrode portion away from the second electrode portion, and at least a portion of the second electrode extending portion is The edge of the second electrode portion extends in a direction away from the first electrode portion. 如申請專利範圍第2項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部分別包括多個彼此分離的子電極。 The illuminating device of claim 2, wherein the first electrode extension and the second electrode extension respectively comprise a plurality of sub-electrodes separated from each other. 如申請專利範圍第8項所述的發光裝置,其中該第一電極延伸部的該些子電極位於該封裝體的上表面上遠離該第二電極的至少一角落,且該第二電極延伸部的該些第二子電極位於該封裝體的上表面上遠離該第一電極的至少一角落。 The illuminating device of claim 8, wherein the sub-electrodes of the first electrode extension portion are located on an upper surface of the package body away from at least one corner of the second electrode, and the second electrode extension portion The second sub-electrodes are located on the upper surface of the package away from at least one corner of the first electrode. 如申請專利範圍第2項所述的發光裝置,其中該第一電極延伸部、該第二電極延伸部的頂面與該封裝體的上表面實質上共平面。 The illuminating device of claim 2, wherein the top surface of the first electrode extension portion and the second electrode extension portion are substantially coplanar with the upper surface of the package body. 如申請專利範圍第2項所述的發光裝置,其中該第一電 極部與該第一電極延伸部為無接縫連接,該第二電極部與該第二電極延伸部為無接縫連接。 The illuminating device of claim 2, wherein the first electric device The pole portion is connected to the first electrode extension portion without a seam, and the second electrode portion and the second electrode extension portion are connected without a seam. 如申請專利範圍第2項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部分別包括一接著層及一配置於該接著層與該封裝體之間的阻障層。 The light-emitting device of claim 2, wherein the first electrode extension portion and the second electrode extension portion respectively comprise an adhesive layer and a barrier layer disposed between the adhesive layer and the package body. 如申請專利範圍第12項所述的發光裝置,其中該接著層的材質包括金、錫、鋁、銀、銅、銦、鉍、鉑、金錫合金、錫銀合金、錫銀銅合金(SAC alloy)或其組合,且該阻障層的材質包括鎳、鈦、鵭、金或其組合之合金。 The illuminating device of claim 12, wherein the material of the adhesive layer comprises gold, tin, aluminum, silver, copper, indium, bismuth, platinum, gold-tin alloy, tin-silver alloy, tin-silver-copper alloy (SAC) Alloy or a combination thereof, and the material of the barrier layer comprises an alloy of nickel, titanium, tantalum, gold or a combination thereof. 如申請專利範圍第2項所述的發光裝置,其中該第一電極與該第二電極分別更包括一反射層,分別配置於該些電極延伸部與該封裝體之間。 The light-emitting device of claim 2, wherein the first electrode and the second electrode further comprise a reflective layer respectively disposed between the electrode extensions and the package. 如申請專利範圍第14項所述的發光裝置,其中該反射層的材質包括金、鋁、銀、鎳、鈦或其組合之合金。 The illuminating device of claim 14, wherein the material of the reflective layer comprises an alloy of gold, aluminum, silver, nickel, titanium or a combination thereof. 如申請專利範圍第1項所述的發光裝置,更包括一反射層,配置於該封裝體的表面上。 The illuminating device of claim 1, further comprising a reflective layer disposed on a surface of the package. 如申請專利範圍第16項所述的發光裝置,其中至少部分該反射層位於該些電極與該封裝體之間。 The illuminating device of claim 16, wherein at least a portion of the reflective layer is located between the electrodes and the package. 如申請專利範圍第16項所述的發光裝置,其中該反射層的材質包括金、鋁、銀、鎳、鈦、布拉格反射鏡(Distributed Bragg Reflector,DBR)、摻有具高反射率的反射粒子的樹脂層或其組合。 The illuminating device of claim 16, wherein the reflective layer is made of gold, aluminum, silver, nickel, titanium, a Bragg Reflector (DBR), and a reflective particle having a high reflectivity. Resin layer or a combination thereof. 如申請專利範圍第1項所述的發光裝置,更包括一波長 轉換材料,包覆該發光單元並至少曝露部分該第一電極及部分該第二電極。 The illuminating device according to claim 1, further comprising a wavelength Converting the material, coating the light emitting unit and exposing at least a portion of the first electrode and a portion of the second electrode. 如申請專利範圍第19項所述的發光裝置,其中該波長轉換材料包括螢光材料或量子點材料。 The illuminating device of claim 19, wherein the wavelength converting material comprises a fluorescent material or a quantum dot material. 如申請專利範圍第19項所述的發光裝置,其中該波長轉換材料是形成在該發光單元的表面、形成在該封裝體的表面或混合在該封裝體中。 The light-emitting device of claim 19, wherein the wavelength conversion material is formed on a surface of the light-emitting unit, formed on a surface of the package, or mixed in the package. 一種發光裝置,包括:一發光單元,包括一基板;一磊晶結構層,配置於該基板上;以及一第一電極與一第二電極,分別配置於該磊晶結構層而相反於該基板的同一側上;一透光層,配置於該發光單元上且位於該基板的一側相反於該磊晶結構層、該第一電極及該第二電極;以及一封裝體,位於該發光單元與該透光層之間,該封裝體封裝該發光單元並至少曝露部分該第一電極及部分該第二電極,該第一電極與該第二電極分別由該磊晶結構層上向外延伸且分別覆蓋至少該封裝體的部分上表面。 A light-emitting device includes: a light-emitting unit including a substrate; an epitaxial structure layer disposed on the substrate; and a first electrode and a second electrode respectively disposed on the epitaxial structure layer opposite to the substrate a light-transmitting layer disposed on the light-emitting unit and opposite to the epitaxial structure layer, the first electrode and the second electrode on a side of the substrate; and a package located at the light-emitting unit And the light-emitting layer encapsulating the light-emitting unit and exposing at least a portion of the first electrode and a portion of the second electrode, wherein the first electrode and the second electrode respectively extend outward from the epitaxial structure layer And covering at least a portion of the upper surface of the package. 如申請專利範圍第22項所述的發光裝置,其中該第一電極包括連接該磊晶結構層的一第一電極部以及連接該第一電極部的一第一電極延伸部,而該第二電極包括連接該磊晶結構層的一 第二電極部以及連接該第二電極部的一第二電極延伸部,該第一電極延伸部與該第二電極延伸部分別向外延伸於至少部分該封裝體的上表面。 The illuminating device of claim 22, wherein the first electrode comprises a first electrode portion connecting the epitaxial structure layer and a first electrode extension portion connecting the first electrode portion, and the second electrode The electrode includes a first layer connected to the epitaxial structure layer a second electrode portion and a second electrode extending portion connecting the second electrode portion, the first electrode extending portion and the second electrode extending portion extending outwardly from at least a portion of the upper surface of the package body. 如申請專利範圍第23項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部切齊於或內縮於該封裝體的上表面的邊緣。 The illuminating device of claim 23, wherein the first electrode extension and the second electrode extension are aligned or contracted at an edge of an upper surface of the package. 如申請專利範圍第23項所述的發光裝置,其中該第一電極部與該第二電極部切齊於或內縮於該磊晶結構層的邊緣。 The illuminating device of claim 23, wherein the first electrode portion and the second electrode portion are aligned or contracted at an edge of the epitaxial structure layer. 如申請專利範圍第22項所述的發光裝置,還包括一或多個平坦的表面,每一平坦的表面包括該透光層及該封裝體。 The illuminating device of claim 22, further comprising one or more flat surfaces, each flat surface comprising the light transmissive layer and the package. 如申請專利範圍第23項所述的發光裝置,其中該第一電極延伸部包括多個第一柵狀電極,而該第二電極延伸部包括多個第二柵狀電極,該些第一柵狀電極分布在該第一電極部與該封裝體的部分上表面上,該些第二柵狀電極分布在該第二電極部與該封裝體的部分上表面上。 The illuminating device of claim 23, wherein the first electrode extension portion comprises a plurality of first grid electrodes, and the second electrode extension portion comprises a plurality of second grid electrodes, the first grids The electrodes are distributed on the first electrode portion and a portion of the upper surface of the package, and the second grid electrodes are distributed on the second electrode portion and a portion of the upper surface of the package. 如申請專利範圍第23項所述的發光裝置,其中至少部分該第一電極延伸部由第一電極部的邊緣往遠離該第二電極部的方向延伸,且至少部分該第二電極延伸部由該第二電極部的邊緣往遠離該第一電極部的方向延伸。 The illuminating device of claim 23, wherein at least a portion of the first electrode extending portion extends from an edge of the first electrode portion away from the second electrode portion, and at least a portion of the second electrode extending portion is The edge of the second electrode portion extends in a direction away from the first electrode portion. 如申請專利範圍第23項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部分別包括多個彼此分離的子電極。 The illuminating device of claim 23, wherein the first electrode extension and the second electrode extension respectively comprise a plurality of sub-electrodes separated from each other. 如申請專利範圍第23項所述的發光裝置,其中該第一電 極延伸部、該第二電極延伸部的頂面與該封裝體的上表面實質上共平面。 The illuminating device of claim 23, wherein the first electric device The pole extension and the top surface of the second electrode extension are substantially coplanar with the upper surface of the package. 如申請專利範圍第23項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部分別包括一接著層及一配置於該接著層與該封裝體之間的阻障層。 The illuminating device of claim 23, wherein the first electrode extending portion and the second electrode extending portion respectively comprise an adhesive layer and a barrier layer disposed between the adhesive layer and the package. 如申請專利範圍第31項所述的發光裝置,其中該接著層的材質包括金、錫、鋁、銀、銅、銦、鉍、鉑、金錫合金、錫銀合金、錫銀銅合金(SAC alloy)或其組合,且該阻障層的材質包括鎳、鈦、鵭、金或其組合之合金。 The light-emitting device of claim 31, wherein the material of the adhesive layer comprises gold, tin, aluminum, silver, copper, indium, bismuth, platinum, gold-tin alloy, tin-silver alloy, tin-silver-copper alloy (SAC) Alloy or a combination thereof, and the material of the barrier layer comprises an alloy of nickel, titanium, tantalum, gold or a combination thereof. 如申請專利範圍第23項所述的發光裝置,其中該第一電極與該第二電極分別更包括一反射層,分別配置於該些電極延伸部與該封裝體之間。 The illuminating device of claim 23, wherein the first electrode and the second electrode further comprise a reflective layer respectively disposed between the electrode extensions and the package. 如申請專利範圍第33項所述的發光裝置,其中該反射層的材質包括金、鋁、銀、鎳、鈦或其組合之合金。 The illuminating device of claim 33, wherein the material of the reflective layer comprises an alloy of gold, aluminum, silver, nickel, titanium or a combination thereof. 如申請專利範圍第22項所述的發光裝置,更包括一反射層,配置於該封裝體的表面上。 The illuminating device of claim 22, further comprising a reflective layer disposed on a surface of the package. 如申請專利範圍第35項所述的發光裝置,其中至少部分該反射層位於該些電極與該封裝體之間。 The illuminating device of claim 35, wherein at least a portion of the reflective layer is located between the electrodes and the package. 如申請專利範圍第35項所述的發光裝置,其中該反射層的材質包括金、鋁、銀、鎳、鈦、布拉格反射鏡(Distributed Bragg Reflector,DBR)、摻有具高反射率的反射粒子的樹脂層或其組合。 The illuminating device of claim 35, wherein the reflective layer is made of gold, aluminum, silver, nickel, titanium, a Bragg Reflector (DBR), and a reflective particle having a high reflectivity. Resin layer or a combination thereof. 如申請專利範圍第22項所述的發光裝置,更包括一波長 轉換材料,包覆該發光單元並至少曝露部分該第一電極及部分該第二電極。 The illuminating device according to claim 22, further comprising a wavelength Converting the material, coating the light emitting unit and exposing at least a portion of the first electrode and a portion of the second electrode. 如申請專利範圍第38項所述的發光裝置,其中該波長轉換材料包括螢光材料或量子點材料。 The illuminating device of claim 38, wherein the wavelength converting material comprises a fluorescent material or a quantum dot material. 如申請專利範圍第38項所述的發光裝置,其中該波長轉換材料是形成在該發光單元的表面、形成在該封裝體的表面或混合在該封裝體中。 The light-emitting device of claim 38, wherein the wavelength conversion material is formed on a surface of the light-emitting unit, formed on a surface of the package, or mixed in the package. 一種發光裝置,包括:一發光單元,包括:一基板;一磊晶結構層,配置於該基板上;以及一第一電極及一第二電極,配置於該磊晶結構層的同一側上;一封裝體,封裝該發光單元並至少曝露部分該第一電極及部分該第二電極,該第一電極與該第二電極分別由該磊晶結構層上向上延伸且分別不覆蓋該封裝體的一上表面。 A light-emitting device, comprising: a light-emitting unit, comprising: a substrate; an epitaxial structure layer disposed on the substrate; and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer; a package body encapsulating the light emitting unit and exposing at least a portion of the first electrode and a portion of the second electrode, wherein the first electrode and the second electrode respectively extend upward from the epitaxial structure layer and do not cover the package respectively An upper surface. 如申請專利範圍第41項所述的發光裝置,其中該第一電極包括一第一電極部以及一第一電極延伸部,而該第二電極包括一第二電極部以及一第二電極延伸部,其中該第一電極延伸部與該第二電極延伸部位分別凸出於該封裝體的該上表面。 The illuminating device of claim 41, wherein the first electrode comprises a first electrode portion and a first electrode extending portion, and the second electrode comprises a second electrode portion and a second electrode extending portion The first electrode extension portion and the second electrode extension portion respectively protrude from the upper surface of the package body. 如申請專利範圍第42項所述的發光裝置,其中該第一電極部與該第二電極部的邊緣切齊於或內縮於該磊晶結構層的邊 緣。 The illuminating device of claim 42, wherein the edge of the first electrode portion and the second electrode portion are aligned or contracted to the side of the epitaxial structure layer. edge. 如申請專利範圍第42項所述的發光裝置,其中該第一電極延伸部包括多個彼此分離的第一子電極,且該第二電極延伸部包括多個彼此分離的第二子電極。 The light-emitting device of claim 42, wherein the first electrode extension comprises a plurality of first sub-electrodes separated from each other, and the second electrode extension comprises a plurality of second sub-electrodes separated from each other. 如申請專利範圍第41項所述的發光裝置,其中該封裝體具有一或多個平坦的表面。 The illuminating device of claim 41, wherein the package has one or more flat surfaces. 如申請專利範圍第41項所述的發光裝置,更包括一反射層,至少配置於該封裝體的部分上表面上。 The illuminating device of claim 41, further comprising a reflective layer disposed on at least a portion of the upper surface of the package. 如申請專利範圍第46項所述的發光裝置,其中該反射層的材質包括金、鋁、銀、鎳、鈦、布拉格反射鏡(Distributed Bragg Reflector,DBR)、摻有具高反射率的反射粒子的樹脂層或其組合。 The illuminating device of claim 46, wherein the reflective layer is made of gold, aluminum, silver, nickel, titanium, a Bragg Reflector (DBR), and a reflective particle having a high reflectivity. Resin layer or a combination thereof. 如申請專利範圍第41項所述的發光裝置,更包括一波長轉換材料,包覆該發光單元並至少曝露部分該第一電極及部分該第二電極。 The illuminating device of claim 41, further comprising a wavelength converting material covering the illuminating unit and exposing at least a portion of the first electrode and a portion of the second electrode. 如申請專利範圍第48項所述的發光裝置,其中該波長轉換材料包括螢光材料或量子點材料。 The illuminating device of claim 48, wherein the wavelength converting material comprises a fluorescent material or a quantum dot material. 如申請專利範圍第48項所述的發光裝置,其中該波長轉換材料是形成在該發光單元的表面、形成在該封裝體的表面或混合在該封裝體中。 The light-emitting device of claim 48, wherein the wavelength conversion material is formed on a surface of the light-emitting unit, formed on a surface of the package, or mixed in the package. 一種發光裝置,包括:一發光單元,包括一基板; 一磊晶結構層,配置於該基板上;以及一第一電極與一第二電極,分別配置於該磊晶結構層的同一側上;以及一封裝體,封裝該發光單元並至少曝露部分該第一電極及部分該第二電極,該第一電極與該第二電極分別由該磊晶結構層上向外延伸且分別覆蓋至少該封裝體的部分上表面。 A light emitting device comprising: a light emitting unit comprising a substrate; An epitaxial structure layer is disposed on the substrate; and a first electrode and a second electrode are respectively disposed on the same side of the epitaxial structure layer; and a package encapsulating the light emitting unit and exposing at least a portion thereof a first electrode and a portion of the second electrode, the first electrode and the second electrode respectively extending outward from the epitaxial structure layer and covering at least a portion of the upper surface of the package. 如申請專利範圍第51項所述的發光裝置,其中該第一電極包括連接該磊晶結構層的一第一電極部以及連接該第一電極部的一第一電極延伸部,而該第二電極包括連接該磊晶結構層的一第二電極部以及連接該第二電極部的一第二電極延伸部,該第一電極延伸部與該第二電極延伸部分別向外延伸於至少部分該封裝體的上表面。 The illuminating device of claim 51, wherein the first electrode comprises a first electrode portion connecting the epitaxial structure layer and a first electrode extension portion connecting the first electrode portion, and the second electrode The electrode includes a second electrode portion connecting the epitaxial structure layer and a second electrode extension portion connecting the second electrode portion, the first electrode extension portion and the second electrode extension portion extending outwardly at least part of the The upper surface of the package. 如申請專利範圍第52項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部切齊於或內縮於該封裝體的上表面的邊緣。 The illuminating device of claim 52, wherein the first electrode extension and the second electrode extension are aligned or contracted at an edge of an upper surface of the package. 如申請專利範圍第53項所述的發光裝置,其中該第一電極部與該第二電極部切齊於或內縮於該磊晶結構層的邊緣。 The illuminating device of claim 53, wherein the first electrode portion and the second electrode portion are aligned or contracted at an edge of the epitaxial structure layer. 如申請專利範圍第51項所述的發光裝置,其中該封裝體具有一或多個平坦的表面。 The illuminating device of claim 51, wherein the package has one or more flat surfaces. 如申請專利範圍第52項所述的發光裝置,其中該第一電極延伸部包括多個第一柵狀電極,而該第二電極延伸部包括多個第二柵狀電極,該些第一柵狀電極分布在該第一電極部與該封裝 體的部分上表面上,該些第二柵狀電極分布在該第二電極部與該封裝體的部分上表面上。 The illuminating device of claim 52, wherein the first electrode extension portion comprises a plurality of first grid electrodes, and the second electrode extension portion comprises a plurality of second grid electrodes, the first grids An electrode is distributed in the first electrode portion and the package On a portion of the upper surface of the body, the second grid electrodes are distributed on the second electrode portion and a portion of the upper surface of the package. 如申請專利範圍第52項所述的發光裝置,其中至少部分該第一電極延伸部由第一電極部的邊緣往遠離該第二電極部的方向延伸,且至少部分該第二電極延伸部由該第二電極部的邊緣往遠離該第一電極部的方向延伸。 The illuminating device of claim 52, wherein at least a portion of the first electrode extending portion extends from an edge of the first electrode portion away from the second electrode portion, and at least a portion of the second electrode extending portion is The edge of the second electrode portion extends in a direction away from the first electrode portion. 如申請專利範圍第52項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部分別包括多個彼此分離的子電極。 The illuminating device of claim 52, wherein the first electrode extension and the second electrode extension respectively comprise a plurality of sub-electrodes separated from each other. 如申請專利範圍第52項所述的發光裝置,其中該第一電極延伸部、該第二電極延伸部的頂面與該封裝體的上表面實質上共平面。 The illuminating device of claim 52, wherein a top surface of the first electrode extension and the second electrode extension is substantially coplanar with an upper surface of the package. 如申請專利範圍第52項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部分別包括一接著層及一配置於該接著層與該封裝體之間的阻障層。 The light-emitting device of claim 52, wherein the first electrode extension portion and the second electrode extension portion respectively comprise an adhesive layer and a barrier layer disposed between the adhesive layer and the package body. 如申請專利範圍第60項所述的發光裝置,其中該接著層的材質包括金、錫、鋁、銀、銅、銦、鉍、鉑、金錫合金、錫銀合金、錫銀銅合金(SAC alloy)或其組合,且該阻障層的材質包括鎳、鈦、鵭、金或其組合之合金。 The illuminating device of claim 60, wherein the material of the adhesive layer comprises gold, tin, aluminum, silver, copper, indium, bismuth, platinum, gold tin alloy, tin silver alloy, tin silver copper alloy (SAC) Alloy or a combination thereof, and the material of the barrier layer comprises an alloy of nickel, titanium, tantalum, gold or a combination thereof. 如申請專利範圍第52項所述的發光裝置,其中該第一電極與該第二電極分別更包括一反射層,分別配置於該些電極延伸部與該封裝體之間。 The illuminating device of claim 52, wherein the first electrode and the second electrode further comprise a reflective layer respectively disposed between the electrode extensions and the package. 如申請專利範圍第62項所述的發光裝置,其中該反射層 的材質包括金、鋁、銀、鎳、鈦或其組合之合金。 The illuminating device of claim 62, wherein the reflective layer The material includes an alloy of gold, aluminum, silver, nickel, titanium or a combination thereof. 如申請專利範圍第51項所述的發光裝置,更包括一反射層,配置於該封裝體的表面上。 The illuminating device of claim 51, further comprising a reflective layer disposed on a surface of the package. 如申請專利範圍第64項所述的發光裝置,其中至少部分該反射層位於該些電極與該封裝體之間。 The illuminating device of claim 64, wherein at least a portion of the reflective layer is located between the electrodes and the package. 如申請專利範圍第64項所述的發光裝置,其中該反射層的材質包括金、鋁、銀、鎳、鈦、布拉格反射鏡(Distributed Bragg Reflector,DBR)、摻有具高反射率的反射粒子的樹脂層或其組合。 The illuminating device of claim 64, wherein the reflective layer is made of gold, aluminum, silver, nickel, titanium, and a Bragg reflector (DBR), and is coated with reflective particles having high reflectivity. Resin layer or a combination thereof. 如申請專利範圍第51項所述的發光裝置,更包括一波長轉換材料,包覆該發光單元並至少曝露部分該第一電極及部分該第二電極。 The illuminating device of claim 51, further comprising a wavelength converting material covering the illuminating unit and exposing at least a portion of the first electrode and a portion of the second electrode. 如申請專利範圍第67項所述的發光裝置,其中該波長轉換材料包括螢光材料或量子點材料。 The illuminating device of claim 67, wherein the wavelength converting material comprises a fluorescent material or a quantum dot material. 如申請專利範圍第67項所述的發光裝置,其中該波長轉換材料是形成在該發光單元的表面、形成在該封裝體的表面或混合在該封裝體中。 The light-emitting device of claim 67, wherein the wavelength conversion material is formed on a surface of the light-emitting unit, formed on a surface of the package, or mixed in the package. 一種發光裝置,包括:一發光單元,包括一基板;一磊晶結構層,配置於該基板上;以及一第一電極與一第二電極,分別配置於該磊晶結構層的同一側上; 一透光層,該發光單元配置於該透光層上且至少曝露該第一電極及該第二電極;以及一封裝體,封裝該發光單元並至少曝露部分該第一電極及部分該第二電極,該第一電極與該第二電極分別由該磊晶結構層向上延伸而不覆蓋該封裝體的一上表面。 A light-emitting device comprising: a light-emitting unit comprising a substrate; an epitaxial structure layer disposed on the substrate; and a first electrode and a second electrode respectively disposed on the same side of the epitaxial structure layer; a light transmissive layer disposed on the light transmissive layer and exposing at least the first electrode and the second electrode; and a package encapsulating the light emitting unit and exposing at least a portion of the first electrode and a portion of the second The electrode, the first electrode and the second electrode respectively extend upward from the epitaxial structure layer without covering an upper surface of the package. 如申請專利範圍第70項所述的發光裝置,其中該第一電極包括一第一電極部以及一第一電極延伸部,而該第二電極包括一第二電極部以及一第二電極延伸部,其中該第一電極延伸部與該第二電極延伸部位分別凸出於該封裝體的該上表面。 The illuminating device of claim 70, wherein the first electrode comprises a first electrode portion and a first electrode extending portion, and the second electrode comprises a second electrode portion and a second electrode extending portion The first electrode extension portion and the second electrode extension portion respectively protrude from the upper surface of the package body. 如申請專利範圍第71項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部切齊於或內縮於該封裝體的上表面的邊緣。 The illuminating device of claim 71, wherein the first electrode extension and the second electrode extension are aligned or contracted at an edge of an upper surface of the package. 如申請專利範圍第71項所述的發光裝置,其中該第一電極部與該第二電極部切齊於或內縮於該磊晶結構層的邊緣。 The illuminating device of claim 71, wherein the first electrode portion and the second electrode portion are aligned or contracted at an edge of the epitaxial structure layer. 如申請專利範圍第70項所述的發光裝置,還包括一或多個平坦的表面,每一平坦的表面包括該透光層及該封裝體。 The illuminating device of claim 70, further comprising one or more flat surfaces, each flat surface comprising the light transmissive layer and the package. 如申請專利範圍第71項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部分別包括多個彼此分離的子電極。 The illuminating device of claim 71, wherein the first electrode extension and the second electrode extension respectively comprise a plurality of sub-electrodes separated from each other. 如申請專利範圍第75項所述的發光裝置,其中該些第一子電極與該些第二子電極為層狀電極、球狀電極或柵狀電極。 The illuminating device of claim 75, wherein the first sub-electrodes and the second sub-electrodes are layer electrodes, spherical electrodes or grid electrodes. 如申請專利範圍第70項所述的發光裝置,更包括一反射層,至少配置於該封裝體的部分上表面上。 The illuminating device of claim 70, further comprising a reflective layer disposed on at least a portion of the upper surface of the package. 如申請專利範圍第77項所述的發光裝置,其中該反射層的材質包括金、鋁、銀、鎳、鈦、布拉格反射鏡(Distributed Bragg Reflector,DBR)、摻有具高反射率的反射粒子的樹脂層或其組合。 The illuminating device of claim 77, wherein the reflective layer is made of gold, aluminum, silver, nickel, titanium, and a Bragg reflector (DBR), and is coated with reflective particles having high reflectivity. Resin layer or a combination thereof. 如申請專利範圍第70項所述的發光裝置,更包括一波長轉換材料,包覆該發光單元並至少曝露部分該第一電極及部分該第二電極。 The illuminating device of claim 70, further comprising a wavelength converting material covering the illuminating unit and exposing at least a portion of the first electrode and a portion of the second electrode. 如申請專利範圍第79項所述的發光裝置,其中該波長轉換材料包括螢光材料或量子點材料。 The illuminating device of claim 79, wherein the wavelength converting material comprises a fluorescent material or a quantum dot material. 如申請專利範圍第79項所述的發光裝置,其中該波長轉換材料是形成在該發光單元的表面、形成在該封裝體的表面或混合在該封裝體中。 The light-emitting device of claim 79, wherein the wavelength conversion material is formed on a surface of the light-emitting unit, formed on a surface of the package, or mixed in the package. 一種發光裝置,包括:一發光單元,包括一基板;一磊晶結構層,配置於該基板上;以及一第一電極與一第二電極,分別配置於該磊晶結構層而相反於該基板的同一側上;一透光層,配置於該發光單元上且位於該基板的一側相反於該磊晶結構層、該第一電極及該第二電極;以及一封裝體,位於該發光單元與該透光層之間,該封裝體封裝該發光單元並至少曝露部分該第一電極及部分該第二電極,該第一電極與該第二電極分別由該磊晶結構層向上延伸且不覆蓋該封 裝體的一上表面。 A light-emitting device includes: a light-emitting unit including a substrate; an epitaxial structure layer disposed on the substrate; and a first electrode and a second electrode respectively disposed on the epitaxial structure layer opposite to the substrate a light-transmitting layer disposed on the light-emitting unit and opposite to the epitaxial structure layer, the first electrode and the second electrode on a side of the substrate; and a package located at the light-emitting unit Between the light-transmissive layer, the package encloses the light-emitting unit and exposes at least a portion of the first electrode and a portion of the second electrode, and the first electrode and the second electrode respectively extend upward from the epitaxial structure layer and are not Cover the seal An upper surface of the body. 如申請專利範圍第82項所述的發光裝置,其中該第一電極包括一第一電極部以及一第一電極延伸部,而該第二電極包括一第二電極部以及一第二電極延伸部,其中該第一電極延伸部與該第二電極延伸部位分別凸出於該封裝體的該上表面。 The illuminating device of claim 82, wherein the first electrode comprises a first electrode portion and a first electrode extending portion, and the second electrode comprises a second electrode portion and a second electrode extending portion The first electrode extension portion and the second electrode extension portion respectively protrude from the upper surface of the package body. 如申請專利範圍第83項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部切齊於或內縮於該封裝體的上表面的邊緣。 The illuminating device of claim 83, wherein the first electrode extension and the second electrode extension are aligned or contracted at an edge of an upper surface of the package. 如申請專利範圍第83項所述的發光裝置,其中該第一電極部與該第二電極部切齊於或內縮於該磊晶結構層的邊緣。 The illuminating device of claim 83, wherein the first electrode portion and the second electrode portion are aligned or contracted at an edge of the epitaxial structure layer. 如申請專利範圍第82項所述的發光裝置,還包括一或多個平坦的表面,每一平坦的表面包括該透光層及該封裝體。 The illuminating device of claim 82, further comprising one or more flat surfaces, each flat surface comprising the light transmissive layer and the package. 如申請專利範圍第83項所述的發光裝置,其中該第一電極延伸部與該第二電極延伸部分別包括多個彼此分離的子電極。 The illuminating device of claim 83, wherein the first electrode extension and the second electrode extension respectively comprise a plurality of sub-electrodes separated from each other. 如申請專利範圍第87項所述的發光裝置,其中該些第一子電極與該些第二子電極為層狀電極、球狀電極或柵狀電極。 The illuminating device of claim 87, wherein the first sub-electrodes and the second sub-electrodes are layer electrodes, spherical electrodes or grid electrodes. 如申請專利範圍第82項所述的發光裝置,更包括一反射層,至少配置於該封裝體的部分上表面上。 The illuminating device of claim 82, further comprising a reflective layer disposed on at least a portion of the upper surface of the package. 如申請專利範圍第89項所述的發光裝置,其中該反射層的材質包括金、鋁、銀、鎳、鈦、布拉格反射鏡(Distributed Bragg Reflector,DBR)、摻有具高反射率的反射粒子的樹脂層或其組合。 The illuminating device of claim 89, wherein the reflective layer is made of gold, aluminum, silver, nickel, titanium, and a Bragg reflector (DBR), and is coated with reflective particles having high reflectivity. Resin layer or a combination thereof. 如申請專利範圍第82項所述的發光裝置,更包括一波長 轉換材料,包覆該發光單元並至少曝露部分該第一電極及部分該第二電極。 The illuminating device according to claim 82, further comprising a wavelength Converting the material, coating the light emitting unit and exposing at least a portion of the first electrode and a portion of the second electrode. 如申請專利範圍第91項所述的發光裝置,其中該波長轉換材料包括螢光材料或量子點材料。 The illuminating device of claim 91, wherein the wavelength converting material comprises a fluorescent material or a quantum dot material. 如申請專利範圍第91項所述的發光裝置,其中該波長轉換材料是形成在該發光單元的表面、形成在該封裝體的表面或混合在該封裝體中。 The light-emitting device of claim 91, wherein the wavelength conversion material is formed on a surface of the light-emitting unit, formed on a surface of the package, or mixed in the package. 如申請專利範圍第41項所述的發光裝置,其中該第一電極和該第二電極的上表面與該封裝體的上表面實質共平面。 The illuminating device of claim 41, wherein the upper surfaces of the first electrode and the second electrode are substantially coplanar with the upper surface of the package. 如申請專利範圍第70項所述的發光裝置,其中該第一電極和該第二電極的上表面與該封裝體的上表面實質共平面。 The illuminating device of claim 70, wherein the upper surfaces of the first electrode and the second electrode are substantially coplanar with the upper surface of the package. 如申請專利範圍第82項所述的發光裝置,其中該第一電極和該第二電極的上表面與該封裝體的上表面實質共平面。 The illuminating device of claim 82, wherein the upper surfaces of the first electrode and the second electrode are substantially coplanar with the upper surface of the package.
TW104113482A 2014-05-07 2015-04-27 Light emitting device TW201543716A (en)

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TW104113482A TW201543716A (en) 2014-05-07 2015-04-27 Light emitting device
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JP2015095107A JP2016015474A (en) 2014-05-07 2015-05-07 Light emission device
CN201510228882.1A CN105098025A (en) 2014-05-07 2015-05-07 Light emitting device
US15/046,407 US20160254428A1 (en) 2014-05-07 2016-02-17 Light emitting device and fabricating method thereof
CN201610089250.6A CN105895769A (en) 2015-02-17 2016-02-17 Light Emitting Device And Fabricating Method Thereof
US15/405,323 US10050183B2 (en) 2014-05-07 2017-01-13 Light emitting device
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