CN105895761B - A kind of GaN light emitting diode with peelable structure - Google Patents
A kind of GaN light emitting diode with peelable structure Download PDFInfo
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- CN105895761B CN105895761B CN201610396403.1A CN201610396403A CN105895761B CN 105895761 B CN105895761 B CN 105895761B CN 201610396403 A CN201610396403 A CN 201610396403A CN 105895761 B CN105895761 B CN 105895761B
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- 238000005530 etching Methods 0.000 claims abstract description 64
- 238000005260 corrosion Methods 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 18
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 18
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 203
- 230000007797 corrosion Effects 0.000 claims description 20
- 239000002356 single layer Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000009933 burial Methods 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention discloses a kind of GaN light emitting diode with peelable structure, and AlN first buffer layers are set on substrate, and the SiO of alternating growth is set in AlN first buffer layers2Corrosion layer and AlN second buffer layers are as etching channels layer；SiO is set on etching channels layer2Graph layer simultaneously forms PSS figures, etching channels layer is exposed between PSS figures, relative and adjacent spaces are set etching channels layer two-by-two, in AlN first buffer layers, SiO2Epitaxial structure is set on the PSS figures and etching channels layer of graph layer.The present invention realizes that high efficiency, low cost is peeled off, and shortens the process time, reduces manufacturing cost, improves diode quality.
Description
Technical field
The present invention relates to LED technology field, refers in particular to a kind of GaN with peelable structure luminous two
Pole pipe.
Background technology
Light emitting diode has low-power consumption, size small and high reliability, is comparatively fast sent out as main light source
Exhibition, light emitting diode extends rapidly in illumination application field in recent years, and develops towards the direction of more high luminous power.
Thin-film LED technology solves light decay existing for high-power light emitting diode because its radiating effect is excellent
Larger problem.The epitaxial structure of light emitting diode and the lift-off technology of substrate are one of key technology of thin-film LED, but
Sapphire Substrate and nitride material be not perishable, so laser lift-off technique is developed and applied.But laser lift-off technique into
This is higher, and charge stripping efficiency is relatively low, therefore develops a kind of more efficient inexpensive lift-off technology and necessitate.
In order to realize the stripping of high efficiency, low cost, shorten chip technology process time, reduce chip manufacturing cost, improve core
Thus piece yield, this case produce.
The content of the invention
It is an object of the invention to provide a kind of GaN light emitting diode with peelable structure, realize it is efficiently low into
This stripping, shorten the process time, reduce manufacturing cost, and due to the PSS pits in chip surface formation rule, energy after stripping
Effectively improve the light extraction efficiency of light emitting diode.
To reach above-mentioned purpose, solution of the invention is：
A kind of GaN light emitting diode with peelable structure, AlN first buffer layers are set on substrate, in AlN the
The SiO of alternating growth is set on one cushion2Corrosion layer and AlN second buffer layers are as etching channels layer；In etching channels layer
Upper setting SiO2Graph layer simultaneously forms PSS figures, exposes etching channels layer between PSS figures, etching channels layer it is relative two-by-two and
Adjacent spaces are set, in AlN first buffer layers, SiO2Epitaxial structure is set on the PSS figures and etching channels layer of graph layer.
Further, epitaxial structure is hindered by growing the unintentional doped gan layer of setting, n-type GaN layer, active area, electronics successively
Barrier, p-type GaN layer and ohmic contact layer composition, unintentional doped gan layer are arranged on AlN first buffer layers, SiO2Graph layer
On PSS figures and etching channels layer.
Further, the thickness of AlN first buffer layers is 5-50nm.
Further, the SiO of alternating growth2Corrosion layer and the logarithm of AlN second buffer layers are more than 2 pairs and less than 8 pairs.
Further, the thickness in monolayer of AlN second buffer layers is 5-20nm in etching channels layer.
Further, SiO in etching channels layer2The thickness in monolayer of corrosion layer is 5-20nm.
Further, etching channels layer is shaped as cone, or etching channels layer cross sectional shape in triangular form, it is trapezoidal,
One kind in semicircle, half elliptic.
Further, the shape of etching channels layer is preferably arranged to cone.
A kind of GaN LED production method with peelable structure, comprises the following steps：
One, the evaporating Al N first buffer layers on substrate；
Two, the alternating deposit SiO in AlN first buffer layers2Corrosion layer and AlN second buffer layers, form etching channels layer；
3rd, SiO is deposited on etching channels layer2Graph layer, etched using photoetching, burial, ICP, in SiO2On graph layer
Form PSS figures；
Four, the etching channels layer exposed between raised PSS figures, etched using photoetching, burial, ICP so that corrosion is logical
Channel layer is arranged to the figure of projection；
Five, epitaxial structure is set on AlN first buffer layers, PSS figures and etching channels layer, epitaxial structure is by successively
Unintentional doped gan layer, n-type GaN layer, active area, electronic barrier layer, p-type GaN layer and the ohmic contact layer composition of growth.
Further, also include after step 5：Six, ohmic contact layer is bonded on conductive Si substrates and is inverted and is turned over
Turn；
Seven, by etching channels layer penetration corrosion PSS figures, peeling liner bottom, expose unintentional doped gan layer；
Eight, unintentional doped gan layer is etched using photoetching, burial, ICP, exposes n-type GaN layer and forms first electrode making
Area, make area in first electrode and form first electrode, while in the back side evaporation metal and second electrode of Si substrates；
9th, sliver forms light emitting diode.
Further, the thickness of AlN first buffer layers is 5-50nm.
Further, the SiO of alternating growth2Corrosion layer and the logarithm of AlN second buffer layers are more than 2 pairs and less than 8 pairs.
Further, the thickness in monolayer of AlN second buffer layers is 5-20nm in etching channels layer.
Further, SiO in etching channels layer2The thickness in monolayer of corrosion layer is 5-20nm.
Further, the shape of etching channels layer, which is set, includes cone, or etching channels layer cross sectional shape be in triangular form,
Trapezoidal, semicircle, half elliptic.
Further, etching channels layers is preferably shaped to cone.
After such scheme, the etching channels layer that exposes between PSS figures of the present invention, etching channels layer it is relative two-by-two and
It is disposed adjacent, in AlN first buffer layers, SiO2Epitaxial structure is set on the PSS figures and etching channels layer of graph layer so that rotten
Dislocation caused by the top of erosion channel layer is opposed and adjacent dislocation is cancelled out each other, and reduces the dislocation line for being through to active area,
On subsequently epitaxial growing without influence, the quality of epitaxial material is improved, improves luminous efficiency.Meanwhile connected by etching channels layer
Each PSS, and PSS uses SiO2 materials, corrodible removal PSS, effectively improves the charge stripping efficiency of substrate and reduces and peel off cost
And yield rate.Finally use the manufacturing method of chip of n-type region upward so that the PSS pits on surface can reduce active area hair
The light gone out is formed at the interface of GaN material and air and is totally reflected, and effectively improves the extraction yield of light emitting diode light, it will be apparent that is increased
Add light efficiency.
Brief description of the drawings
Fig. 1 is the preparation method schematic diagram one of the present invention；
Fig. 2 is Fig. 1 top view；
Fig. 2 a are the sectional views in Fig. 2A-A directions；
Fig. 2 b are the sectional views in Fig. 2 B-B directions；
Fig. 2 c are the sectional views in Fig. 2 C-C directions；
Fig. 3 a are the setting epitaxial structure schematic diagrames on the basis of Fig. 2 a；
Fig. 3 b are the setting epitaxial structure schematic diagrames on the basis of Fig. 2 b；
Fig. 3 c are the setting epitaxial structure schematic diagrames on the basis of Fig. 2 c；
Fig. 4 is that epitaxial structure is bonded to schematic diagram on conductive Si substrates on the basis of Fig. 3 a；
Fig. 5 is to corrode PSS figures on the basis of Fig. 4 to expose unintentional doped gan layer schematic diagram；
Fig. 6 is to form first electrode on the basis of Fig. 5 to make area's schematic diagram；
Fig. 7 is that first electrode and second electrode schematic diagram are made on the basis of Fig. 6.
Label declaration
The AlN first buffer layers 2 of substrate 1
The SiO of etching channels layer 32Corrosion layer 31
The SiO of AlN second buffer layers 322Graph layer 4
The epitaxial structure 5 of PSS figures 41
The unintentional n-type GaN layer 52 of doped gan layer 51
First electrode makes the active area 53 of area 521
The p-type GaN layer 55 of electronic barrier layer 54
The substrate 6 of ohmic contact layer 56
The second electrode 8 of first electrode 7.
Embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
Refering to a kind of GaN light emitting diode with peelable structure that shown in Fig. 1 to Fig. 7, the present invention discloses, serving as a contrast
AlN first buffer layers 2 are set on bottom 1, the SiO of alternating growth is set in AlN first buffer layers 22Corrosion layer 31 and AlN second
Cushion 32 is as etching channels layer 3, as shown in figure 1, setting SiO on etching channels layer 32Graph layer 4 simultaneously forms PSS figures
Expose etching channels layer 3 between 41, PSS figures 41, relative and adjacent spaces are set etching channels layer 3 two-by-two, such as Fig. 2 a to figure
Shown in 2c, in AlN first buffer layers 2, SiO2Epitaxial structure 5 is set on the PSS figures 41 and etching channels layer 3 of graph layer 4, such as
Shown in Fig. 3 a to Fig. 3 c.
Epitaxial structure 5 is hindered by growing the unintentional doped gan layer 51 of setting, n-type GaN layer 52, active area 53, electronics successively
Barrier 54, p-type GaN layer 55 and ohmic contact layer 56 form, unintentional doped gan layer 51 be arranged on AlN first buffer layers 2,
SiO2On the PSS figures 41 and etching channels layer 3 of graph layer 4.
The thickness of AlN first buffer layers 2 is 5-50nm.The thickness of AlN first buffer layers 2 is excessively thin to bring epitaxial growth
AlN first buffer layers 2 caused by Cheng Wendu height are baked decomposition, and the thickness of AlN first buffer layers 2 is blocked up to cause epitaxial structure
5 external quantum efficiency declines.
The SiO of alternating growth2Corrosion layer 31 and the logarithm of AlN second buffer layers 32 are more than 2 pairs and less than 8 pairs.Logarithm mistake
It can cause stress excessive more, influence the stability of subsequently epitaxial growing.
The thickness in monolayer of AlN second buffer layers 32 is 5-20nm in etching channels layer 3.The thickness of AlN second buffer layers 32
The excessively thin AlN second buffer layers 32 that can be brought epitaxial process temperature height and cause surface are baked decomposition.AlN second buffer layers
32 thickness is blocked up to be caused and SiO2The stress of corrosion layer 31 is excessive, influences the stability of subsequently epitaxial growing.
SiO in etching channels layer 32The thickness in monolayer of corrosion layer 31 is 5-20nm.SiO2The thickness of corrosion layer 31 is excessively thin to lead
The corrosion penetration speed step-down of etching channels layer 3 is caused, influences the efficiency of the stripping of substrate 1.SiO2The blocked up meeting of thickness of corrosion layer 31
Cause excessive with the stress of AlN second buffer layers 32, influence the stability of subsequently epitaxial growing.
Etching channels layer 3 is ended up with second buffer layer 32, is ensured using the ending of AlN second buffer layers 32 in etching channels layer
The quality of materials of unintentional doped gan layer 51 formed on 3 will not be deteriorated.
Etching channels layer 3 is shaped to cone, and it is bullet shape to be usually arranged to top profile so that dislocation
Line is all to concentrate on top.The position of etching channels layer 3 is set for opposition two-by-two, can make what the top of etching channels layer 3 was formed
Dislocation line is cancelled out each other, and reduces the dislocation line for being through to active area.
As shown in Figures 1 to 7, a kind of GaN LED production method with peelable structure, including following step
Suddenly：
One, as shown in figure 1, using PVD, the evaporating Al N first buffer layers 2 in Sapphire Substrate 1；
Two, the alternating deposit SiO in AlN first buffer layers 22Corrosion layer 31 forms corrosion with AlN second buffer layers 32 and led to
Channel layer 3, ended up with AlN second buffer layers 32；
3rd, SiO is deposited on etching channels layer 32Graph layer 4, etched using photoetching, burial, ICP, in SiO2Graph layer
PSS figures 41 are formed on 4, as shown in Figure 2；
Four, the etching channels layer 3 exposed between raised PSS figures 41, etched using photoetching, burial, ICP so that rotten
Erosion channel layer 3 is arranged to the figure of projection, as shown in Fig. 2 a and Fig. 2 c；
Five, as shown in Fig. 3 a to Fig. 3 c, set on AlN first buffer layers 2, PSS figures 41 and etching channels layer 3 outer
Prolong structure 5, epitaxial structure 5 by grow successively unintentional doped gan layer 51, n-type GaN layer 52, active area 53, electronic barrier layer
54th, p-type GaN layer 55 and ohmic contact layer 56 form.
Six, as shown in figure 4, ohmic contact layer 56 is bonded on conductive Si substrates 6 and is inverted upset；
Seven, as shown in figure 5, by the penetration corrosion PSS figures 41 of etching channels layer 3, peeling liner bottom 1, expose unintentional mix
Miscellaneous GaN layer 51；
Eight, as shown in FIG. 6 and 7, unintentional doped gan layer 51 is etched using photoetching, burial, ICP, exposes n-type GaN layer
52, which form first electrode, makes area 521, and making area 521 in first electrode forms first electrode 7, while at the back side of Si substrates 6
Evaporation metal and second electrode 8；
9th, sliver forms light emitting diode.
The thickness of AlN first buffer layers 2 is 5-50nm.The thickness of AlN first buffer layers 2 is excessively thin to bring epitaxial growth
AlN first buffer layers 2 caused by Cheng Wendu height are baked decomposition, and the thickness of AlN first buffer layers 2 is blocked up to cause epitaxial structure
5 external quantum efficiency declines.
The SiO of alternating growth2Corrosion layer 31 and the logarithm of AlN second buffer layers 32 are more than 2 pairs and less than 8 pairs.Logarithm mistake
It can cause stress excessive more, influence the stability of subsequently epitaxial growing.
The thickness in monolayer of AlN second buffer layers 32 is 5-20nm in etching channels layer 3.The thickness of AlN second buffer layers 32
The excessively thin AlN second buffer layers 32 that can be brought epitaxial process temperature height and cause surface are baked decomposition.AlN second buffer layers
32 thickness is blocked up to be caused and SiO2The stress of corrosion layer 31 is excessive, influences the stability of subsequently epitaxial growing.
SiO in etching channels layer 32The thickness in monolayer of corrosion layer 31 is 5-20nm.SiO2The thickness of corrosion layer 31 is excessively thin to lead
The corrosion penetration speed step-down of etching channels layer 3 is caused, influences the efficiency of the stripping of substrate 1.SiO2The blocked up meeting of thickness of corrosion layer 31
Cause excessive with the stress of AlN second buffer layers 32, influence the stability of subsequently epitaxial growing.
Etching channels layer 3 is ended up with second buffer layer 32, is ensured using the ending of AlN second buffer layers 32 in etching channels layer
The quality of materials of unintentional doped gan layer 51 formed on 3 will not be deteriorated.
Etching channels layer 3 is shaped to cone, and it is bullet shape to be usually arranged to top profile so that dislocation
Line is all to concentrate on top.The position of etching channels layer 3 is set for opposition two-by-two, can make what the top of etching channels layer 3 was formed
Dislocation line is cancelled out each other, and reduces the dislocation line for being through to active area.
The preferred embodiments of the present invention are the foregoing is only, not the limitation of this case design, all designs according to this case are closed
The equivalent variations that key is done, each fall within the protection domain of this case.
Claims (7)
- A kind of 1. GaN light emitting diode with peelable structure, it is characterised in that：AlN first is set to buffer on substrate Layer, the SiO of alternating growth is set in AlN first buffer layers2Corrosion layer and AlN second buffer layers are as etching channels layer； SiO is set on etching channels layer2Graph layer simultaneously forms PSS figures, and etching channels layer, etching channels layer are exposed between PSS figures Relative and adjacent spaces are set two-by-two, in AlN first buffer layers, SiO2Set on the PSS figures and etching channels layer of graph layer Epitaxial structure.
- A kind of 2. GaN light emitting diode with peelable structure as claimed in claim 1, it is characterised in that：Epitaxy junction Structure is connect by unintentional doped gan layer, n-type GaN layer, active area, electronic barrier layer, p-type GaN layer and the ohm for growing setting successively Contact layer forms, and unintentional doped gan layer is arranged on AlN first buffer layers, SiO2The PSS figures and etching channels layer of graph layer On.
- A kind of 3. GaN light emitting diode with peelable structure as claimed in claim 1 or 2, it is characterised in that：AlN The thickness of first buffer layer is 5-50nm.
- A kind of 4. GaN light emitting diode with peelable structure as claimed in claim 1 or 2, it is characterised in that：Alternately The SiO of growth2Corrosion layer and the logarithm of AlN second buffer layers are more than 2 pairs and less than 8 pairs.
- A kind of 5. GaN light emitting diode with peelable structure as claimed in claim 1 or 2, it is characterised in that：Corrosion The thickness in monolayer of AlN second buffer layers is 5-20nm in channel layer.
- A kind of 6. GaN light emitting diode with peelable structure as claimed in claim 1 or 2, it is characterised in that：Corrosion SiO in channel layer2The thickness in monolayer of corrosion layer is 5-20nm.
- A kind of 7. GaN light emitting diode with peelable structure as claimed in claim 1 or 2, it is characterised in that：Corrosion Channel layer is shaped as cone, or the cross sectional shape of etching channels layer is in triangular form, trapezoidal, semicircle, half elliptic It is a kind of.
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| CN201610396403.1A CN105895761B (en) | 2016-06-07 | 2016-06-07 | A kind of GaN light emitting diode with peelable structure |
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| CN105895761B true CN105895761B (en) | 2018-02-23 |
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| CN108470720B (en) * | 2018-03-23 | 2020-07-28 | 广东省半导体产业技术研究院 | Method for stripping substrate by wet etching |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794849A (en) * | 2010-02-23 | 2010-08-04 | 山东华光光电子有限公司 | Wet etching stripping method of SiC-substrate GaN-based LED |
| CN104347359A (en) * | 2014-09-18 | 2015-02-11 | 厦门乾照光电股份有限公司 | High-efficiency substrate peeling method |
| CN104835890A (en) * | 2015-05-12 | 2015-08-12 | 杭州士兰明芯科技有限公司 | Substrate and epitaxial wafer for flip LED chips and making methods thereof |
| CN104993023A (en) * | 2015-05-29 | 2015-10-21 | 上海芯元基半导体科技有限公司 | Method for removing growth substrate by utilizing chemical corrosion method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4465745B2 (en) * | 1999-07-23 | 2010-05-19 | ソニー株式会社 | Semiconductor laminated substrate, semiconductor crystal substrate, semiconductor element, and manufacturing method thereof |
| KR100588377B1 (en) * | 2005-05-10 | 2006-06-09 | 삼성전기주식회사 | Vertically structured gan type light emitting diode and method of manufacturing the same |
| KR101238169B1 (en) * | 2011-01-28 | 2013-02-27 | 포항공과대학교 산학협력단 | Method of manufacturing light emitting diode using wet etched type buffer layer |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794849A (en) * | 2010-02-23 | 2010-08-04 | 山东华光光电子有限公司 | Wet etching stripping method of SiC-substrate GaN-based LED |
| CN104347359A (en) * | 2014-09-18 | 2015-02-11 | 厦门乾照光电股份有限公司 | High-efficiency substrate peeling method |
| CN104835890A (en) * | 2015-05-12 | 2015-08-12 | 杭州士兰明芯科技有限公司 | Substrate and epitaxial wafer for flip LED chips and making methods thereof |
| CN104993023A (en) * | 2015-05-29 | 2015-10-21 | 上海芯元基半导体科技有限公司 | Method for removing growth substrate by utilizing chemical corrosion method |
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