CN105895672A - Ion implanted improved substrate with reduction of gallium-nitride-based electronic device epitaxial stress - Google Patents
Ion implanted improved substrate with reduction of gallium-nitride-based electronic device epitaxial stress Download PDFInfo
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- CN105895672A CN105895672A CN201510038542.2A CN201510038542A CN105895672A CN 105895672 A CN105895672 A CN 105895672A CN 201510038542 A CN201510038542 A CN 201510038542A CN 105895672 A CN105895672 A CN 105895672A
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Abstract
The present invention discloses an ion implanted improved substrate with the reduction of gallium-nitride-based electronic device epitaxial stress. According to the ion implanted improved substrate, the ion implantation technology is used to selectively implant ions into a conventional gallium nitride heteroepitaxial epitaxial substrate, thus the thermal expansion coefficient, Young modulus, lattice constant, crystal structure and the like of a substrate material with the ion implantation are changed, the physical performance parameter of the heteroepitaxial substrate material is matched with the performance parameter of a gallium nitride material so as to adapt the epitaxial growth of the gallium nitride electronic device in a heterogeneous substrate, the epitaxial growth stress of the gallium-nitride-based electronic device in the heterogeneous substrate is reduced, and thus the growth quality of the gallium nitride material and the overall performance of the device are improved. According to ion implanted improved substrate, the reduction of the epitaxial stress of the gallium-nitride-based electronic device is obviously improved, and the ion implanted improved substrate plays an important role in improving the overall performance of the electronic device and thus has potential practical and commercial values in the electronic device application.
Description
Technical field
The invention belongs to semiconductor device processing technology field, relate to using ion implantation technique
Improve the epitaxial growth stress of gallium nitride based electronic device in foreign substrate and improve device performance.
Background technology
In recent years, as third generation wide bandgap semiconductor materials, with GaN, InGaN, AlGaN
The semiconductor device that III-V nitride the is representative research being main enjoys the concern of researcher,
It obtains important breakthrough and the application of industrialization in some field of semiconductor devices.Research shows,
The physical and chemical performance of gallium nitride becomes light emitting diode, laser instrument, electronic power device
The preferred material of the opto-electronic devices such as part.
But, the technology of preparing of gallium nitride monocrystal substrate wafer requires height, present off on a large scale
Industrialization also has certain distance, and the material matched with GaN epitaxial growth is still in exploration
With in research process.Gallium nitride based electronic device is usually with silicon, sapphire, carborundum etc.
Foreign substrate Epitaxial growth and prepare, but gallium nitride also exists different journey from this substrate
The lattice mismatch of degree and thermal expansion mismatch.Such as, gallium nitride material, with sapphire lattice
Mismatch and thermal expansion mismatch are respectively 13.9% and 8.5%, with lattice mismatch and the flatulence of heat type of Si
Mismatch is respectively-16.96% and 3.9%.The biggest lattice mismatch and coefficient of thermal expansion mismatch,
Gallium nitride electronic device is made to produce huge epitaxial growth stress after epitaxial process or cooling
, thus affect device performance, the especially life of the gallium nitride based electronic device on silicon substrate
Long, owing to large scale, big stress field make device bending or be full of cracks occur, have a strong impact on electricity
Practical and the commercialization of sub-device.So, solve the stress produced in hetero-epitaxy
Field becomes the key factor improving gallium nitride based electronic device performance.Foreign substrate growth at present
Technology, can weaken the impact that device is prepared by stress field to a certain extent, but there is no and do
Method is more effective further or is completely carried out release and eliminates stress.Therefore, in conjunction with present
Gallium nitride device growing technology and backing material, improve the performance of semiconductive material substrate, make
It is one of effective and feasible way that its performance parameter and gallium nitride material match.
Summary of the invention
In order to overcome existing Heteroepitaxy technology and the deficiency of foreign substrate Material growth, the present invention
A kind of improved-type substrate of ion implanting is provided, utilizes ion implantation technique modified causing backing material
Ion implanting to foreign substrate material, change original physical property of this foreign substrate material
Parameter so that it is match with the physical function parameter of gallium nitride and doped series material thereof, reduces
Due to foreign substrate physical property parameter of material and gallium nitride material physical function parameter not
Join the foreign substrate epitaxial growth stress of the gallium nitride based electronic device caused, thus improve and carry
High gallium nitride based electronic device epitaxial growth quality and device performance.
The present invention is according to the diversity of epitaxial substrate material Yu the physical function parameter of gallium nitride, choosing
Selecting property ground, pointedly backing material is carried out ion implanting, make the physical property of backing material
Parameter matches with gallium nitride series, thus overcomes in epitaxial growth and heating and cooling process,
Stress field, on epitaxial material and the impact of device performance, improves the property of gallium nitride based electronic device
Can parameter.
Concrete technical scheme is as follows:
The present invention is a kind of, and to reduce the ion implanting of gallium nitride based electronic device epitaxial stress improved-type
Substrate, the improved-type substrate of described ion implanting, its material be mainly sapphire, silicon, carborundum,
The monocrystal materials such as GaAs, after described backing material is ion implanted, its performance parameter and nitridation
Gallium and series semiconductor material parameter thereof match or mutually compensate for.According to described substrate material
The physical function parameters such as the thermal coefficient of expansion of material, Young's modulus, lattice paprmeter are corresponding to gallium nitride
Physical function parameter between diversity, according to the diversity of ionic type performance, specific aim
Ground selects suitable ionic type to inject, in order to improve the intrinsic performance of backing material, final with
The performance parameter of gallium nitride material matches.That is injected causes the ion that backing material is modified, its
Element be mainly weak base metallic element, transition elements (III B, IV B, V B, VI B, VII B,
VIII, I B, II B), halogen, II A-VII A race element etc..
The improved-type substrate of described ion implanting, according to backing material (sapphire, silicon, carbonization
Silicon, GaAs) with the diversity of the parameter of the performance such as gallium nitride, aluminium nitride determine to inject from
The type of son；Ionic type select after, according to practical situation determine ion implanting concentration and from
Son is injected into the degree of depth of backing material.Ion implanting face, can select substrate according to practical situation
The front of material or the back side.
The improved-type substrate of described ion implanting, that is injected causes the ion that backing material is modified,
Its kind can be single kind of ion, it is also possible to be two kinds or three kinds and more than three kinds mixed
Close ion.That is injected causes the ion that backing material is modified, its improved-type in backing material
Sheath, can be monolayer, or multilamellar, or loop cycle layer.
That is injected causes the ion that backing material is modified, the position of the sheath in improved-type substrate
Put (as middle or near front or near the back side), the concentration of ion, sheath
Thickness parameter, can be according to treating that epitaxially grown electronic device and design thereof are adjusted.
The improved-type substrate of described ion implanting compared with originally levying substrate, its thermal coefficient of expansion,
In physical function parameter in terms of Young's modulus, lattice parameter, crystal structure, can be only at certain
Individual physical function parameter changes, or two or more physical function parameters change simultaneously, with
Just the physical function parameter with gallium nitride material matches, thus improves more and improve nitrogen
Change the extension performance of gallio electronic device.
The improved-type substrate of described ion implanting, it is possible to according in Grown electronic device institute
Carry out improving former backing material by the equivalent performance parameter of various types of materials physical function parameter
Performance parameter, the most single gallium nitride material, optimum to reach the device performance of entirety.Also
Backing material can be improved into reciprocal according to the growth overall stress state of electronic device
Stress state, the original stress state of compensating device.Such as, growing gallium nitride on a silicon substrate
Electronic device is tensile stress, and the parameter such as ionic type, regulation concentration can be selected to inject silicon lining
, make the silicon substrate after injection be in front compressive stress, to reach the effect compensated at the end.
The improved-type substrate technology of ion implanting of the present invention, is also suitable for aluminium nitride, indium nitride
Deng third generation quasiconductor based nitride epitaxial material and the growth of device, all can effectively improve also
Improve the performance of its material and device.
Accompanying drawing explanation
Fig. 1 is the improved-type substrate of ion implanting set forth in the present invention；
Fig. 2 be described in the embodiment of the present invention one with gallium nitride material thermal expansion properties match parameters
Ion implanting improve silicon substrate,；
Fig. 3 is to mutually compensate for gallium nitride material epitaxial stress described in the embodiment of the present invention two
The Sapphire Substrate that ion implanting is improved.
Description of reference numerals:
1: heterogeneous [material such as silicon, sapphire and carborundum] substrate, 11:[is heterogeneous] substrate is just
Face, 12:[is heterogeneous] substrate back；In 2:[foreign substrate] ion implanted layer, 3:[is different
Matter backing material Epitaxial growth] gallium nitride electronic device layer
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is further elaborated.Should manage
Solve, the specific embodiment being only used for explaining the present invention described herein, and do not limit the present invention
Right.
Embodiment one:
As in figure 2 it is shown, the intrinsic silicon material substrate selected by 1 expression, according to theoretical and experiment
Proving, the comprehensive equivalent heat of the gallium nitride electronic device 3 of silicon substrate material Epitaxial growth is swollen
Swollen coefficient ρdeviceThan intrinsic silicon substrate ρsiThermal coefficient of expansion big, electronic device growth is complete
After, in temperature-fall period, electronic device is due to the performance parameter such as thermal coefficient of expansion and lattice mismatch
Diversity receive great tensile stress F, electronic device upper surface forms spill, such as Fig. 2
Shown in upper figure.According to experimental phenomena, select ionic compound that thermal coefficient of expansion is bigger (gallium and
Arsenic ion) it is injected into intrinsic silicon substrate interior, the position of optimization implanted layer and thickness and ion are dense
The parameters such as degree, form ion implanting and improve layer 2, increase the fiber yarn ρ of silicon substratesi-e,
Make the thermal coefficient of expansion ρ of itself and electronic device layerdeviceEqual or relatively mate, reduce heat
The bending that expansion coefficient mismatch causes, as shown in Fig. 2 figure below, thus is to a certain degree reducing electricity
The tensile stress of the thermal expansion mismatch of sub-device, reduces the curvature of substrate, improves the property of device
Energy.
Embodiment two:
As it is shown on figure 3, the intrinsic Sapphire Substrate selected by 1 surface, according to theoretical and experiment
Prove, the comprehensive equivalence of the gallium nitride electronic device 3 of saphire substrate material Epitaxial growth
Thermal coefficient of expansion ρdeviceThermal coefficient of expansion ρ than intrinsic saphire substrate materialAl2O3Little, electricity
After sub-device growth, in temperature-fall period, electronic device is due to thermal coefficient of expansion and lattice
The diversity of the performance parameters such as mismatch receives great pressure stress F, and electronic device upper surface is convex
Rise, shown in figure as upper in Fig. 3.According to experimental phenomena, utilize the principle of stress compensation, select one
Kind of thermal coefficient of expansion than sapphire the little ion suitable with gallium nitride or ionic compound (aluminum and
Nitrogen ion) it is injected into the Sapphire Substrate inside near the back side, optimize position and the thickness of implanted layer
The parameters such as degree and ion concentration, form ion implanting and improve layer 2, and its ion implanting improves layer 2
Equivalence thermal coefficient of expansion ρAl2O3-eThermal coefficient of expansion less than intrinsic saphire substrate material
ρAl2O3.After electronic device growth, during cooling, due to Sapphire Substrate just
Face is by the electronic device layer tensile stress to it, and ion implanting improves layer also to remaining indigo plant simultaneously
Gem intrinsic layer produces tensile stress, thus forms Sapphire Substrate strains experienced balance,
F1=F2, as shown in Fig. 3 figure below, reduces electronic device because of thermal mismatching and brings curvature, and one
Determine to release in degree the tensile stress of electronic device, improve the combination property of electronic device.
Claims (8)
1. reduce the improved-type substrate of ion implanting of gallium nitride based electronic device epitaxial stress,
It is characterized in that, utilize ion implantation technique causing the modified ion implanting of backing material to heterogeneous
Backing material, changes original physical function parameter of this foreign substrate material so that it is with nitridation
The physical function parameter of gallium and doped series material thereof matches, and reduces due to foreign substrate material
Physical function parameter do not mate, with the physical function parameter of gallium nitride material, the gallium nitride caused
The foreign substrate epitaxial growth stress of base electron device, thus improve gallium nitride based electronic
Device epitaxial growth quality and device performance.
A kind of reduction gallium nitride based electronic device epitaxial stress the most according to claim 1
The improved-type substrate of ion implanting, it is characterised in that the improved-type substrate of described ion implanting, its
Material is mainly the monocrystal materials such as sapphire, silicon, carborundum, GaAs, described backing material
After the ion implanting causing its modification, its performance parameter and gallium nitride and series semiconductor material thereof
Match parameters or mutually compensate for.
A kind of reduction gallium nitride based electronic device epitaxial stress the most according to claim 1
The improved-type substrate of ion implanting.It is characterized in that, the cause backing material modification of described injection
Ion, its element be mainly weak base metallic element, transition elements (III B, IV B, V B, VI
B, VII B, VIII, I B, II B), halogen, II A-VII A race element.
A kind of reduction gallium nitride based electronic device epitaxial stress the most according to claim 3
The improved-type substrate of ion implanting, it is characterised in that described injection to cause backing material modified
Ion, its kind can be single kind of ion, it is also possible to be two kinds or three kinds and three kinds with
On hybrid ionic.
A kind of reduction gallium nitride based electronic device epitaxial stress the most according to claim 3
The improved-type substrate of ion implanting, it is characterised in that described injection to cause backing material modified
Ion, its improved-type sheath in backing material, can be monolayer, or multilamellar or
Person's loop cycle layer.
6. according to a kind of reduction gallium nitride described in any claim in claim 3 to 5
The improved-type substrate of ion implanting of base electron device epitaxial stress, it is characterised in that described injection
Cause the ion that backing material is modified, the position of the sheath in improved-type substrate, ion
Concentration, the thickness parameter of sheath, is according to treating epitaxially grown electronic device and can to set
Meter scheme is adjusted.
7. nitrogenize gallio electricity according to a kind of reduction the described in any claim in right 2 to 6
The improved-type substrate of ion implanting of sub-device epitaxial stress, it is characterised in that described ion implanting
Improved-type substrate is compared with originally levying substrate, in its thermal coefficient of expansion, Young's modulus, lattice ginseng
In physical function parameter in terms of number, crystal structure, can be only at certain physical function parameter
Change, or two or more physical function parameters change simultaneously, in order to gallium nitride material
Physical function parameter match, thus improve more and improve gallium nitride based electronic device
Extension performance.
8. nitrogenize gallio electricity according to a kind of reduction the described in any claim in right 2 to 6
The improved-type substrate of ion implanting of sub-device epitaxial stress, it is characterised in that described ion implanting
Improved-type substrate technology, is also suitable for the third generation quasiconductor based nitride such as aluminium nitride, indium nitride
Epitaxial material and the growth of device, all can improve and improve the performance of its material and device effectively.
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| CN201510038542.2A CN105895672A (en) | 2015-01-26 | 2015-01-26 | Ion implanted improved substrate with reduction of gallium-nitride-based electronic device epitaxial stress |
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| CN201510038542.2A CN105895672A (en) | 2015-01-26 | 2015-01-26 | Ion implanted improved substrate with reduction of gallium-nitride-based electronic device epitaxial stress |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119334A (en) * | 2018-08-24 | 2019-01-01 | 长江存储科技有限责任公司 | The surface modification method of semiconductor structure and the manufacturing method of 3D memory device |
| WO2022161136A1 (en) * | 2021-01-29 | 2022-08-04 | 华为技术有限公司 | Encapsulation structure, substrate and encapsulation method |
| WO2023231925A1 (en) * | 2022-05-30 | 2023-12-07 | 湖南三安半导体有限责任公司 | Epitaxial structure of semiconductor, semiconductor device and preparation method therefor |
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Patent Citations (5)
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| CN109119334A (en) * | 2018-08-24 | 2019-01-01 | 长江存储科技有限责任公司 | The surface modification method of semiconductor structure and the manufacturing method of 3D memory device |
| CN109119334B (en) * | 2018-08-24 | 2021-03-23 | 长江存储科技有限责任公司 | Surface modification method of semiconductor structure and manufacturing method of 3D memory device |
| WO2022161136A1 (en) * | 2021-01-29 | 2022-08-04 | 华为技术有限公司 | Encapsulation structure, substrate and encapsulation method |
| WO2023231925A1 (en) * | 2022-05-30 | 2023-12-07 | 湖南三安半导体有限责任公司 | Epitaxial structure of semiconductor, semiconductor device and preparation method therefor |
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