CN105895654B - 内嵌入式照明通信双功能led器件及其制作方法 - Google Patents

内嵌入式照明通信双功能led器件及其制作方法 Download PDF

Info

Publication number
CN105895654B
CN105895654B CN201610320742.1A CN201610320742A CN105895654B CN 105895654 B CN105895654 B CN 105895654B CN 201610320742 A CN201610320742 A CN 201610320742A CN 105895654 B CN105895654 B CN 105895654B
Authority
CN
China
Prior art keywords
core particles
type
communication type
solder joint
luminous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610320742.1A
Other languages
English (en)
Other versions
CN105895654A (zh
Inventor
孙慧卿
黄鸿勇
黄涌
张柱定
黄晶
孙杰
杨晛
衣新燕
郭志友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China Normal University
Original Assignee
South China Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China Normal University filed Critical South China Normal University
Priority to CN201610320742.1A priority Critical patent/CN105895654B/zh
Publication of CN105895654A publication Critical patent/CN105895654A/zh
Application granted granted Critical
Publication of CN105895654B publication Critical patent/CN105895654B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

本发明公开一种内嵌入式照明通信双功能LED器件,包括一个外围LED芯粒和嵌于所述外围LED芯粒内部的2N个通信型发光芯粒,所述2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列,还包括外围LED芯粒和2N个通信型发光芯粒共用的p型焊点、通信型发光芯粒的n型焊点和外围LED芯粒的n型焊点,所述外围LED芯粒和通信型发光芯粒均沉积于衬底上,所述2N个通信型发光芯粒通过串联方式连接。

Description

内嵌入式照明通信双功能LED器件及其制作方法
技术领域
本发明涉及可见光通信领域,具体涉及一种内嵌入式照明通信双功能LED器件及其制作方法。
背景技术
照明用LED器件问世已有十余载,大功率LED照明器件也有数年的研究和使用,发光器件作为通信信息的载体成为近两年的热门研究课题,但是该技术推广和应用受到了普通的LED器件相应频率的制约,如果采用微米级LED器件虽然相应频率上去了,但存在照明效果差的问题,也就是说现在的通信用的发光器件还是应用均处于初级阶段,实际应用因为发光能力而被限制。
发明内容
本发明的目的是解决现有技术的缺陷,提供一种内嵌入式照明通信双功能LED器件,采用的技术方案如下:
一种内嵌入式照明通信双功能LED器件,包括一个外围LED芯粒和嵌于所述外围LED芯粒内部的2N个通信型发光芯粒,所述2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列,还包括外围LED芯粒和2N个通信型发光芯粒共用的p型焊点、通信型发光芯粒的n型焊点和外围LED芯粒的n型焊点,所述外围LED芯粒和通信型发光芯粒均沉积于衬底上,所述2N个通信型发光芯粒通过串联方式连接。
通信型发光芯粒为通信基本单元,通过减小其面积,也是减小芯粒体积,从而提升器件响应时间和响应速率。而使用串联方式将2N个芯粒串在一起,虽然增加了整个器件的电阻R,但是以同样比例缩小了整个器件的电容C,相比单颗芯粒的结构,器件整体响应频率变化不大,但是其照明效果是单颗的2N倍,这也是实现功率型可见光通信器件的关键设计,而外围的外围LED芯粒则作为器件照明主要来源。
本发明通过在外围LED芯粒内嵌入照明通信双功能LED器件,充分利用了LED具有响应时间短、高速调制特点,满足普通照明使用要求,又能满足通信的要求。
外围的外围LED芯粒采用本领域普通的外围LED芯粒即可。
作为优选,所述通信型发光芯粒包括依次沉积在衬底上的缓冲层、n型半导体层、发光层、p型半导体层和透明电极,将2N个芯粒串联连接于p型焊点和通信型发光芯粒的n型焊点两端的电极线路。
作为优选,所述通信型发光芯粒间、通信型发光芯粒与外围LED芯粒间铺垫有二氧化硅,并通过刻蚀技术在二氧化硅上刻出为所述焊点预留的位置。
所述二氧化硅使电极线路在芯粒间连接和踮起电极焊点于衬底上。
相邻芯粒间的是为了让电极线在芯粒间不存在高阶梯情况,导致电极断裂,焊点处的二氧化硅则可以踮起焊点,让焊点与芯粒间不存在高阶梯情况,导致电极断裂。
作为优选,本发明包括8个通信型发光芯粒,所述芯粒为环形结构的芯粒。
采用环形结构Chip芯粒使得发光层的电子空穴复合均匀,达到高复合率,以便达到器件高速和宽频带技术效果,9个(一个外围LED芯粒和8个通信型发光芯粒)芯粒组成使得其在照明效果上达到1W。
作为优选,所述衬底为蓝宝石衬底。
与现有技术相比,本发明的有益效果:
(1)器件采用环形结构芯粒,增加芯片的有效发光面,提升响应速率。
(2)采用8颗芯粒串联的通信型晶粒外围设计一个方形框型普通外围LED芯粒,它们在同一衬底上弥补了单颗通信型光电器件照明能力不足
(3)采用公用电极焊点,减少了焊点占用率,而将焊点沉积在衬底上面的二氧化硅上,减少电极焊点对照明和通信性能的影响。
本发明的另一目的是解决现有技术的缺陷,提供一种内嵌入式照明通信双功能LED器件的制作方法,包括以下步骤:
选用MOCVD系统,在导电型衬底上生长具有量子阱结构的GaN/InGaN外延片;
利用半导体平面工艺进行制备工作,通过芯片制备刻蚀工艺将外延片形成以下结构:2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列;
通过台面刻蚀形成每个通信型发光芯粒和外围LED芯粒的n型半导体层;
在每个通信型发光芯粒和外围LED芯粒的P型层上沉积透明电极层;
在通信型发光芯粒间、通信型发光芯粒和外围LED芯粒间沉积二氧化硅层,并在二氧化硅层上预留焊点位置,通过刻蚀技术在二氧化硅层上刻出;
制备2N个通信型发光芯粒共用的p型焊点、通信型发光芯粒的n型焊点和外围LED芯粒的n型焊点;
将2N个芯粒串联连接于p型焊点和通信型发光芯粒的n型焊点两端的电极线路。
作为优选,本发明中,N=4,所述芯粒为环形结构的芯粒。
与现有技术相比,本发明的有益效果:
(1)器件采用环形结构芯粒,增加芯片的有效发光面,提升响应速率;
(2)采用8颗芯粒串联的通信型晶粒外围设计一个方形框型普通外围LED芯粒,它们在同一衬底上弥补了单颗通信型光电器件照明能力不足;
(3)采用公用电极焊点,减少了焊点占用率,而将焊点沉积在衬底上面的二氧化硅上,减少电极焊点对照明和通信性能的影响。
附图说明
图1是本发明的器件示意图;
图2是通信型相邻晶粒的剖面结构图;
图3是本发明的器件照明晶粒和8个光通信晶粒分立制备图;
图4是本发明的器件台面工艺制备图;
图5 是本发明的器件透明电极制备图;
图6是本发明的器件二氧化硅设计制备图;
图 7是本发明的器件电极制备图;
图8 是本发明的器件二氧化硅保护层制备图。
具体实施方式
下面结合附图和实施例对本发明做进一步详细描述。
实施例:
如图1和图2所示,一种内嵌入式照明通信双功能LED器件,包括一个外围LED芯粒和嵌于所述外围LED芯粒内部的2N个通信型发光芯粒,所述2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列,还包括外围LED芯粒和2N个通信型发光芯粒共用的p型焊点26、通信型发光芯粒的n型焊点25和外围LED芯粒的n型焊点27,所述外围LED芯粒和通信型发光芯粒均沉积于衬底上,所述2N个通信型发光芯粒通过串联方式连接。
所述通信型发光芯粒包括依次沉积在衬底1上的缓冲层2、n型半导体层3、发光层4、p型半导体层5和透明电极6,将2N个芯粒串联连接于p型焊点26和通信型发光芯粒的n型焊点27两端的电极线路9。
所述芯粒间铺垫有二氧化硅10,并通过刻蚀技术在二氧化硅10上刻出为所述焊点预留的位置。
所述二氧化硅使电极线路在芯粒间连接和踮起电极焊点于衬底上。
本实施例包括8个通信型发光芯粒,所述芯粒为环形结构的芯粒。
如图3至图8所示,一种内嵌入式照明通信双功能LED器件的制作方法,包括以下步骤:
选用MOCVD系统,在导电型衬底上生长具有量子阱结构的GaN/InGaN外延片;
利用半导体平面工艺进行制备工作,通过芯片制备刻蚀工艺将外延片形成以下结构:2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列,如图3所示;
通过台面刻蚀形成每个通信型发光芯粒和外围LED芯粒的n型半导体层,如图4所示,图中标号14、15分别为外围LED芯粒和通信型芯粒的台面图样;
在每个通信型发光芯粒和外围LED芯粒的P型层上沉积透明电极层,如图5所示,图中16和17分别为外围LED芯粒和通信型芯粒的的透明电极结构;
在通信型发光芯粒间、通信型发光芯粒和外围LED芯粒间沉积二氧化硅层,并在二氧化硅层上预留焊点位置,通过刻蚀技术在二氧化硅层上刻出,如图6所示,图中标号18、19分别是为串联电极和焊点沉积二氧化硅层;
制备2N个通信型发光芯粒共用的p型焊点、通信型发光芯粒的n型焊点和外围LED芯粒的n型焊点;
将2N个芯粒串联连接于p型焊点和通信型发光芯粒的n型焊点两端的电极线路,图7所示20、21、22、23是外围LED芯粒和通信晶粒的p和n电极走向;
覆盖一层二氧化硅保护层,如图8所示24为覆盖二氧化硅之后进行刻蚀出电极的光刻板图形,所有工序完成之后得到如图1所示的器件图。

Claims (2)

1.一种内嵌入式照明通信双功能LED器件的制作方法,其特征在于,包括以下步骤:
选用MOCVD系统,在导电型衬底上生长具有量子阱结构的GaN/InGaN外延片;
利用半导体平面工艺进行制备工作,通过芯片制备刻蚀工艺将外延片形成以下结构:2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列;
通过台面刻蚀形成每个通信型发光芯粒和外围LED芯粒的n型半导体层;
在每个通信型发光芯粒和外围LED芯粒的P型层上沉积透明电极层;
在通信型发光芯粒间、通信型发光芯粒和外围LED芯粒间沉积二氧化硅层,并在二氧化硅层上预留焊点位置,通过刻蚀技术在二氧化硅层上刻出预留的所述焊点位置;
制备2N个通信型发光芯粒共用的p型焊点、通信型发光芯粒的n型焊点和外围LED芯粒的n型焊点;
将2N个芯粒串联连接于p型焊点和通信型发光芯粒的n型焊点两端的电极线路。
2.根据权利要求1所述的内嵌入式照明通信双功能LED器件的制作方法,其特征在于,N=4。
CN201610320742.1A 2016-05-16 2016-05-16 内嵌入式照明通信双功能led器件及其制作方法 Active CN105895654B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610320742.1A CN105895654B (zh) 2016-05-16 2016-05-16 内嵌入式照明通信双功能led器件及其制作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610320742.1A CN105895654B (zh) 2016-05-16 2016-05-16 内嵌入式照明通信双功能led器件及其制作方法

Publications (2)

Publication Number Publication Date
CN105895654A CN105895654A (zh) 2016-08-24
CN105895654B true CN105895654B (zh) 2019-01-18

Family

ID=56717441

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610320742.1A Active CN105895654B (zh) 2016-05-16 2016-05-16 内嵌入式照明通信双功能led器件及其制作方法

Country Status (1)

Country Link
CN (1) CN105895654B (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102748604A (zh) * 2011-04-19 2012-10-24 晶元光电股份有限公司 照明及光通讯二用的发光装置及发光二极管模块
CN202521324U (zh) * 2012-03-28 2012-11-07 佛山市国星光电股份有限公司 一种可见光照明通信两用led光源模块
CN103296044A (zh) * 2012-02-23 2013-09-11 晶元光电股份有限公司 二维式阵列发光二极管元件
CN104333418A (zh) * 2014-09-01 2015-02-04 中国科学院半导体研究所 显示通信两用的可见光模块
CN105161581A (zh) * 2015-09-15 2015-12-16 华南师范大学 具有照明和通信双功能的发光器件
CN105405938A (zh) * 2015-12-29 2016-03-16 中国科学院半导体研究所 可见光通信用单芯片白光led及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI249148B (en) * 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
TWI597872B (zh) * 2013-11-25 2017-09-01 晶元光電股份有限公司 發光二極體元件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102748604A (zh) * 2011-04-19 2012-10-24 晶元光电股份有限公司 照明及光通讯二用的发光装置及发光二极管模块
CN103296044A (zh) * 2012-02-23 2013-09-11 晶元光电股份有限公司 二维式阵列发光二极管元件
CN202521324U (zh) * 2012-03-28 2012-11-07 佛山市国星光电股份有限公司 一种可见光照明通信两用led光源模块
CN104333418A (zh) * 2014-09-01 2015-02-04 中国科学院半导体研究所 显示通信两用的可见光模块
CN105161581A (zh) * 2015-09-15 2015-12-16 华南师范大学 具有照明和通信双功能的发光器件
CN105405938A (zh) * 2015-12-29 2016-03-16 中国科学院半导体研究所 可见光通信用单芯片白光led及其制备方法

Also Published As

Publication number Publication date
CN105895654A (zh) 2016-08-24

Similar Documents

Publication Publication Date Title
US8785958B2 (en) Light emitting element
CN101839403B (zh) 用于交流驱动的发光装置
US8604500B2 (en) Light emitting device and light emitting device package
WO2013044817A1 (zh) 一种倒装集成发光二极管及其制备方法
CN108369977A (zh) 低光学损失倒装芯片固态照明设备
EP2390926A2 (en) Light emitting device, method for fabricating the light emitting device, light emitting device package, and lighting unit
JP2016184724A (ja) 発光素子及びこれを含む発光素子パッケージ
CN104103659B (zh) 单晶双光源发光元件
US20070241356A1 (en) Semiconductor light emitting device
TW200905910A (en) Light emitting device
CN103219352A (zh) 阵列式结构的led组合芯片及其制作方法
TW201440265A (zh) 一種結合磊晶結構與封裝基板爲一體之整合式led元件及其製作方法
TWI580079B (zh) 發光二極體封裝結構及發光二極體模組
CN108352423A (zh) 半导体器件
CN106299040B (zh) 一种薄膜倒装发光组件的制作方法及其薄膜倒装发光组件
TW201042720A (en) A wafer-level CSP processing method and thereof a thin-chip SMT-type light emitting diode
US20110140137A1 (en) Led device and method of manufacturing the same
EP2219240A2 (en) Semiconductor light emitting device
CN105895654B (zh) 内嵌入式照明通信双功能led器件及其制作方法
CN105702823A (zh) 一种小型led芯片及其制造方法
CN105895653B (zh) 高压可见光通信led器件及其制作方法
US20140183569A1 (en) Led chip unit and manufacturing method thereof, and led module
CN103904182A (zh) 一种衬底图形化的倒装led芯片及其制备方法
CN108493306B (zh) 一种高压高功率GaN基LED阵列芯片的制备方法
TW200623448A (en) Light emitting diode and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant