CN105895654B - 内嵌入式照明通信双功能led器件及其制作方法 - Google Patents
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Abstract
本发明公开一种内嵌入式照明通信双功能LED器件,包括一个外围LED芯粒和嵌于所述外围LED芯粒内部的2N个通信型发光芯粒,所述2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列,还包括外围LED芯粒和2N个通信型发光芯粒共用的p型焊点、通信型发光芯粒的n型焊点和外围LED芯粒的n型焊点,所述外围LED芯粒和通信型发光芯粒均沉积于衬底上,所述2N个通信型发光芯粒通过串联方式连接。
Description
技术领域
本发明涉及可见光通信领域,具体涉及一种内嵌入式照明通信双功能LED器件及其制作方法。
背景技术
照明用LED器件问世已有十余载,大功率LED照明器件也有数年的研究和使用,发光器件作为通信信息的载体成为近两年的热门研究课题,但是该技术推广和应用受到了普通的LED器件相应频率的制约,如果采用微米级LED器件虽然相应频率上去了,但存在照明效果差的问题,也就是说现在的通信用的发光器件还是应用均处于初级阶段,实际应用因为发光能力而被限制。
发明内容
本发明的目的是解决现有技术的缺陷,提供一种内嵌入式照明通信双功能LED器件,采用的技术方案如下:
一种内嵌入式照明通信双功能LED器件,包括一个外围LED芯粒和嵌于所述外围LED芯粒内部的2N个通信型发光芯粒,所述2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列,还包括外围LED芯粒和2N个通信型发光芯粒共用的p型焊点、通信型发光芯粒的n型焊点和外围LED芯粒的n型焊点,所述外围LED芯粒和通信型发光芯粒均沉积于衬底上,所述2N个通信型发光芯粒通过串联方式连接。
通信型发光芯粒为通信基本单元,通过减小其面积,也是减小芯粒体积,从而提升器件响应时间和响应速率。而使用串联方式将2N个芯粒串在一起,虽然增加了整个器件的电阻R,但是以同样比例缩小了整个器件的电容C,相比单颗芯粒的结构,器件整体响应频率变化不大,但是其照明效果是单颗的2N倍,这也是实现功率型可见光通信器件的关键设计,而外围的外围LED芯粒则作为器件照明主要来源。
本发明通过在外围LED芯粒内嵌入照明通信双功能LED器件,充分利用了LED具有响应时间短、高速调制特点,满足普通照明使用要求,又能满足通信的要求。
外围的外围LED芯粒采用本领域普通的外围LED芯粒即可。
作为优选,所述通信型发光芯粒包括依次沉积在衬底上的缓冲层、n型半导体层、发光层、p型半导体层和透明电极,将2N个芯粒串联连接于p型焊点和通信型发光芯粒的n型焊点两端的电极线路。
作为优选,所述通信型发光芯粒间、通信型发光芯粒与外围LED芯粒间铺垫有二氧化硅,并通过刻蚀技术在二氧化硅上刻出为所述焊点预留的位置。
所述二氧化硅使电极线路在芯粒间连接和踮起电极焊点于衬底上。
相邻芯粒间的是为了让电极线在芯粒间不存在高阶梯情况,导致电极断裂,焊点处的二氧化硅则可以踮起焊点,让焊点与芯粒间不存在高阶梯情况,导致电极断裂。
作为优选,本发明包括8个通信型发光芯粒,所述芯粒为环形结构的芯粒。
采用环形结构Chip芯粒使得发光层的电子空穴复合均匀,达到高复合率,以便达到器件高速和宽频带技术效果,9个(一个外围LED芯粒和8个通信型发光芯粒)芯粒组成使得其在照明效果上达到1W。
作为优选,所述衬底为蓝宝石衬底。
与现有技术相比,本发明的有益效果:
(1)器件采用环形结构芯粒,增加芯片的有效发光面,提升响应速率。
(2)采用8颗芯粒串联的通信型晶粒外围设计一个方形框型普通外围LED芯粒,它们在同一衬底上弥补了单颗通信型光电器件照明能力不足
(3)采用公用电极焊点,减少了焊点占用率,而将焊点沉积在衬底上面的二氧化硅上,减少电极焊点对照明和通信性能的影响。
本发明的另一目的是解决现有技术的缺陷,提供一种内嵌入式照明通信双功能LED器件的制作方法,包括以下步骤:
选用MOCVD系统,在导电型衬底上生长具有量子阱结构的GaN/InGaN外延片;
利用半导体平面工艺进行制备工作,通过芯片制备刻蚀工艺将外延片形成以下结构:2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列;
通过台面刻蚀形成每个通信型发光芯粒和外围LED芯粒的n型半导体层;
在每个通信型发光芯粒和外围LED芯粒的P型层上沉积透明电极层;
在通信型发光芯粒间、通信型发光芯粒和外围LED芯粒间沉积二氧化硅层,并在二氧化硅层上预留焊点位置,通过刻蚀技术在二氧化硅层上刻出;
制备2N个通信型发光芯粒共用的p型焊点、通信型发光芯粒的n型焊点和外围LED芯粒的n型焊点;
将2N个芯粒串联连接于p型焊点和通信型发光芯粒的n型焊点两端的电极线路。
作为优选,本发明中,N=4,所述芯粒为环形结构的芯粒。
与现有技术相比,本发明的有益效果:
(1)器件采用环形结构芯粒,增加芯片的有效发光面,提升响应速率;
(2)采用8颗芯粒串联的通信型晶粒外围设计一个方形框型普通外围LED芯粒,它们在同一衬底上弥补了单颗通信型光电器件照明能力不足;
(3)采用公用电极焊点,减少了焊点占用率,而将焊点沉积在衬底上面的二氧化硅上,减少电极焊点对照明和通信性能的影响。
附图说明
图1是本发明的器件示意图;
图2是通信型相邻晶粒的剖面结构图;
图3是本发明的器件照明晶粒和8个光通信晶粒分立制备图;
图4是本发明的器件台面工艺制备图;
图5 是本发明的器件透明电极制备图;
图6是本发明的器件二氧化硅设计制备图;
图 7是本发明的器件电极制备图;
图8 是本发明的器件二氧化硅保护层制备图。
具体实施方式
下面结合附图和实施例对本发明做进一步详细描述。
实施例:
如图1和图2所示,一种内嵌入式照明通信双功能LED器件,包括一个外围LED芯粒和嵌于所述外围LED芯粒内部的2N个通信型发光芯粒,所述2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列,还包括外围LED芯粒和2N个通信型发光芯粒共用的p型焊点26、通信型发光芯粒的n型焊点25和外围LED芯粒的n型焊点27,所述外围LED芯粒和通信型发光芯粒均沉积于衬底上,所述2N个通信型发光芯粒通过串联方式连接。
所述通信型发光芯粒包括依次沉积在衬底1上的缓冲层2、n型半导体层3、发光层4、p型半导体层5和透明电极6,将2N个芯粒串联连接于p型焊点26和通信型发光芯粒的n型焊点27两端的电极线路9。
所述芯粒间铺垫有二氧化硅10,并通过刻蚀技术在二氧化硅10上刻出为所述焊点预留的位置。
所述二氧化硅使电极线路在芯粒间连接和踮起电极焊点于衬底上。
本实施例包括8个通信型发光芯粒,所述芯粒为环形结构的芯粒。
如图3至图8所示,一种内嵌入式照明通信双功能LED器件的制作方法,包括以下步骤:
选用MOCVD系统,在导电型衬底上生长具有量子阱结构的GaN/InGaN外延片;
利用半导体平面工艺进行制备工作,通过芯片制备刻蚀工艺将外延片形成以下结构:2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列,如图3所示;
通过台面刻蚀形成每个通信型发光芯粒和外围LED芯粒的n型半导体层,如图4所示,图中标号14、15分别为外围LED芯粒和通信型芯粒的台面图样;
在每个通信型发光芯粒和外围LED芯粒的P型层上沉积透明电极层,如图5所示,图中16和17分别为外围LED芯粒和通信型芯粒的的透明电极结构;
在通信型发光芯粒间、通信型发光芯粒和外围LED芯粒间沉积二氧化硅层,并在二氧化硅层上预留焊点位置,通过刻蚀技术在二氧化硅层上刻出,如图6所示,图中标号18、19分别是为串联电极和焊点沉积二氧化硅层;
制备2N个通信型发光芯粒共用的p型焊点、通信型发光芯粒的n型焊点和外围LED芯粒的n型焊点;
将2N个芯粒串联连接于p型焊点和通信型发光芯粒的n型焊点两端的电极线路,图7所示20、21、22、23是外围LED芯粒和通信晶粒的p和n电极走向;
覆盖一层二氧化硅保护层,如图8所示24为覆盖二氧化硅之后进行刻蚀出电极的光刻板图形,所有工序完成之后得到如图1所示的器件图。
Claims (2)
1.一种内嵌入式照明通信双功能LED器件的制作方法,其特征在于,包括以下步骤:
选用MOCVD系统,在导电型衬底上生长具有量子阱结构的GaN/InGaN外延片;
利用半导体平面工艺进行制备工作,通过芯片制备刻蚀工艺将外延片形成以下结构:2N个通信型发光芯粒在外围LED芯粒内部呈N×2阵列排列;
通过台面刻蚀形成每个通信型发光芯粒和外围LED芯粒的n型半导体层;
在每个通信型发光芯粒和外围LED芯粒的P型层上沉积透明电极层;
在通信型发光芯粒间、通信型发光芯粒和外围LED芯粒间沉积二氧化硅层,并在二氧化硅层上预留焊点位置,通过刻蚀技术在二氧化硅层上刻出预留的所述焊点位置;
制备2N个通信型发光芯粒共用的p型焊点、通信型发光芯粒的n型焊点和外围LED芯粒的n型焊点;
将2N个芯粒串联连接于p型焊点和通信型发光芯粒的n型焊点两端的电极线路。
2.根据权利要求1所述的内嵌入式照明通信双功能LED器件的制作方法,其特征在于,N=4。
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