CN105873249A - Heater, sensor, intelligent terminal and manufacturing method of heater - Google Patents
Heater, sensor, intelligent terminal and manufacturing method of heater Download PDFInfo
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- CN105873249A CN105873249A CN201610371820.0A CN201610371820A CN105873249A CN 105873249 A CN105873249 A CN 105873249A CN 201610371820 A CN201610371820 A CN 201610371820A CN 105873249 A CN105873249 A CN 105873249A
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- layer
- heating resistor
- heater
- underlay substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/003—Heaters using a particular layout for the resistive material or resistive elements using serpentine layout
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Abstract
The invention provides a heater, a sensor, an intelligent terminal and a manufacturing method of the heater. The heater comprises a substrate and a heating resistance layer arranged on the substrate, and a groove is formed in the substrate. According to the heater, as the groove is formed in the substrate of the heater, heat losses of the heating resistance layer can be effectively reduced through the groove, power dissipation of the heater is further reduced, and the performance of the heater is improved.
Description
Technical field
The present invention relates to sensor field, particularly relate to a kind of heater, sensor, intelligence eventually
End and the preparation method of heater.
Background technology
Miniature thin-film heater has application in a lot of fields, such as hot associated gas sensor and red
Outer light source, along with maturation and the development of apparatus and process of MEMS technology of preparing, makes on glass
Standby MEMS also becomes feasible path, for miniature thin-film heater, commonly uses at present
Method is directly to make resistance wire at glass baseplate surface, but this kind of structure heat dissipation phenomenon compares
Seriously, power consumption is higher.
Summary of the invention
(1) to solve the technical problem that
The technical problem to be solved in the present invention is: provide a kind of heater, sensor, intelligence eventually
End and the preparation method of heater, can reduce heater power consumption.
(2) technical scheme
For solving above-mentioned technical problem, technical scheme provides a kind of heater, bag
Include underlay substrate and be arranged on the heating resistor layer on described underlay substrate, described underlay substrate
On be provided with groove.
Preferably, the projection on described underlay substrate of the resistance wire of described heating resistor layer is positioned at
In described groove, and by described groove between described heating resistor layer and described underlay substrate
Form cavity.
Preferably, described heating resistor layer is non-planar.
Preferably, the resistance wire of described heating resistor layer is provided with the conductive structure in branch shape.
Preferably, described heating resistor layer includes the resistance wire of non-linear shape.
Preferably, described underlay substrate is additionally provided be positioned at below described heating resistor layer
Support layer.
Preferably, described supporting layer includes cantilever portion and for carrying described heating resistor layer
The supporting region of resistance wire, the described supporting region of described supporting layer is provided with mesh.
Preferably, described supporting layer includes at least one of which silicon nitride layer and/or at least one of which silica
Layer.
Preferably, the thickness of described supporting layer is 0.2 μm～3 μm.
Preferably, the degree of depth of described groove is 20 μm～50 μm, and the width of described groove is
300 μm～1000 μm, a length of 300 μm of described groove～1000 μm.
Preferably, the projection on described underlay substrate of the resistance wire of described heating resistor layer is positioned at
Outside described groove.
Preferably, it is additionally provided with thermal insulation layer between described underlay substrate and described heating resistor layer.
Preferably, it is additionally provided with cushion between described thermal insulation layer and described heating resistor layer.
For solving above-mentioned technical problem, present invention also offers a kind of sensor, including above-mentioned
Heater.
For solving above-mentioned technical problem, present invention also offers a kind of intelligent terminal, including above-mentioned
Heater.
For solving above-mentioned technical problem, present invention also offers the preparation method of a kind of heater,
Be included on underlay substrate formation heating resistor layer, be additionally included in formed on described underlay substrate recessed
Groove.
Preferably, described underlay substrate forms described groove and described heating resistor layer includes:
Described underlay substrate is formed described groove；
Packed layer is formed in described groove；
Described packed layer is formed described heating resistor layer；
Remove the packed layer in described groove, with at described heating resistor layer and described underlay substrate
Between formed cavity.
Preferably, after forming packed layer in described groove, filling out in removing described groove
Also include before filling layer: formed on described underlay substrate and be positioned at below described heating resistor layer
Supporting layer.
Preferably, concurrently form in a patterning processes described supporting layer and described in add thermoelectricity
Resistance layer.
Preferably, described concurrently form in a patterning processes described supporting layer and described in add
Thermoelectricity resistance layer includes:
Packed layer is formed dielectric film；
Described dielectric film is formed resistive material film；
Forming photoetching agent pattern on described resistive material film, described photoetching agent pattern includes light
Photoresist is fully retained region, photoresist half retains region and photoresist removal region, wherein,
Described photoresist is fully retained the corresponding described heating resistor layer in region, described photoresist half reserved area
The part that the corresponding described supporting layer in territory is not overlapping with described heating resistor layer；
Remove and be positioned at the described resistive material film in described photoresist removal region and be positioned at described light
Photoresist removes the described dielectric film in region；
The photoresist that described photoresist half is retained region carries out ashing process；
Remove the described resistive material film being positioned at described photoresist half reservation region；
Removal is positioned at described photoresist and the photoresist in region is fully retained.
Preferably, the upper surface of described packed layer is on-plane surface, with formed non-planar described in
Heating resistor layer.
Preferably, the projection on described underlay substrate of the resistance wire of described heating resistor layer is positioned at
Outside described groove.
Preferably, described underlay substrate forms described groove and described heating resistor layer includes:
Described underlay substrate is formed resistive material film；
Forming photoetching agent pattern on described resistive material film, described photoetching agent pattern includes light
Photoresist removes region and photoresist retains region, and it is corresponding described recessed that region removed by described photoresist
Groove, described photoresist retains the corresponding described heating resistor layer in region；
Remove resistive material film and the substrate of segment thickness being positioned at described photoresist removal region
Substrate；
Remove described photoresist and retain the photoresist in region.
(3) beneficial effect
The heater that the present invention provides is by arranging groove on the underlay substrate of heater, logical
Cross this groove and can effectively reduce the thermal losses of heating resistor layer, and then reduce heater power consumption,
Improve the performance of heater.
Accompanying drawing explanation
Fig. 1 is the sectional view of a kind of 2-dimensional planar type heater that embodiment of the present invention provides；
Fig. 2 is the top view of a kind of 2-dimensional planar type heater that embodiment of the present invention provides；
Fig. 3 is the schematic diagram of resistance wire in a kind of heating resistor layer that embodiment of the present invention provides；
Fig. 4 is the signal of resistance wire in the another kind of heating resistor layer that embodiment of the present invention provides
Figure；
Fig. 5 is the top view that embodiment of the present invention provides another kind of 2-dimensional planar type heater；
Fig. 6 is the top view that embodiment of the present invention provides another 2-dimensional planar type heater；
Fig. 7 is the signal of resistance wire in another heating resistor layer that embodiment of the present invention provides
Figure；
Fig. 8 is the top view that embodiment of the present invention provides another 2-dimensional planar type heater；
Fig. 9 is the sectional view of a kind of three-dimensional structure heater that embodiment of the present invention provides；
Figure 10 is the top view of a kind of three-dimensional structure heater that embodiment of the present invention provides；
Figure 11 is the top view of the another kind of three-dimensional structure heater that embodiment of the present invention provides；
Figure 12 is the sectional view of the another kind of three-dimensional structure heater that embodiment of the present invention provides；
Figure 13 is the sectional view of a kind of heater that embodiment of the present invention provides；
Figure 14 is the schematic diagram of a kind of resistance wire of heater in Figure 13；
Figure 15 is the schematic diagram of the another kind of resistance wire of heater in Figure 13；
Figure 16 is the schematic diagram of a kind of intelligent terminal that embodiment of the present invention provides；
Figure 17 is the schematic diagram of the another kind of intelligent terminal that embodiment of the present invention provides；
Figure 18 a-18e is a kind of schematic diagram making heater that embodiment of the present invention provides；
Figure 19 a-19e is the another kind of schematic diagram making heater that embodiment of the present invention provides；
Figure 20 a-20e is the schematic diagram of another making heater that embodiment of the present invention provides；
Figure 21 a-21c be embodiment of the present invention provide at a kind of schematic diagram making heater.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, the detailed description of the invention of the present invention is made the most in detail
Describe.Following example are used for illustrating the present invention, but are not limited to the scope of the present invention.
Embodiment of the present invention provides a kind of heater, including underlay substrate and be arranged on institute
State the heating resistor layer on underlay substrate, described underlay substrate is provided with groove.
The heater that embodiment of the present invention provides, by arranging on the underlay substrate of heater
Groove, can effectively be reduced the thermal losses of heating resistor layer, and then reduce heating by this groove
Device power consumption, improves the performance of heater.
See the schematic diagram that Fig. 1, Fig. 1 are a kind of heaters that embodiment of the present invention provides, should
Heater include underlay substrate 100 and be arranged on described underlay substrate 100 add thermal resistance
Layer 300, the resistance wire in heating resistor layer 300 is connected with lead-in wire electrode 400, described substrate base
It is provided with groove 110 on plate 100, and the resistance wire of heating resistor layer 300 is on underlay substrate
Projection be positioned at groove 110, by described groove 110 at heating resistor layer 300 with described
Forming cavity between underlay substrate 100, such as, underlay substrate 100 can be glass substrate；
Preferably, described underlay substrate 100 is additionally provided with it is positioned at below described heating resistor layer
Supporting layer 200, as in figure 2 it is shown, supporting layer 200 is used for carrying heating resistor layer 300, its
Including cantilever portion (i.e. cantilever beam) 210 and for carrying the resistance wire of heating resistor layer 300
Supporting region 220；
Wherein, the resistance wire in heating resistor layer can be linearity, it is preferable that add thermal resistance
Resistance wire in Ceng can be non-linear shape, such that it is able to increase resistance wire in limited space
Length, promotes heating effect, for example, it is possible to be polyline shaped, tortuous wire etc., such as, right
In the heating resistor layer of square contour, resistance wire therein can use such as Fig. 3 or Fig. 4 shape
Broken line shape；
It addition, be conducted to the heat of underlay substrate for reducing resistance wire further, can be such as Fig. 5
Shown in mesh 221 is set on the supporting region 220 of supporting layer 200, support can be made by mesh
The heat that layer is conducted to substrate is less, thus reduces heater power consumption further.
Wherein, in embodiments of the present invention, underlay substrate can be not only glass substrate, also
Can be ceramic substrate, flexible resin substrate etc..
See the schematic diagram that Fig. 6, Fig. 6 are the another kind of heaters that embodiment of the present invention provides,
This heater include underlay substrate 100 and be successively set on described underlay substrate 100
Support layer 200 and heating resistor layer 300, such as, underlay substrate 100 can be glass substrate,
It is provided with groove 110 on described underlay substrate 100, and the resistance wire of heating resistor layer 300 exists
Projection on underlay substrate is positioned at groove 110, adds thermoelectricity by described groove 110 described
Forming cavity between resistance layer 300 and described underlay substrate 100, supporting layer 200 adds for carrying
Thermoelectricity resistance layer, it includes cantilever portion (i.e. cantilever beam) 210 and is used for carrying heating resistor layer
The supporting region 220 of the resistance wire of 300, can effectively reduce the heat of heating resistor layer by this cavity
Loss, and then reduce heater power consumption, improve the performance of heater；
Wherein, the resistance wire 310 of described heating resistor layer 300 is provided with leading in branch shape
Heat structure 320, such as, the material of conductive structure 320 can be identical with the material of resistance wire 310,
When making resistance wire 310, conductive structure 320 can be made simultaneously；
By arranging the conductive structure of branch shape on the resistance wire of heating resistor layer, led by this
Heat structure can be to infarctional heat, such that it is able to make heater under conditions of similar power consumption
The heat produced is more evenly distributed, and makes resistance wire bigger with sensing material contact area, makes employing
The sensor performance of this heater is more stable, such as, for for fuel gas (methane, one
Carbonoxide etc.) for the combustion-type sensor that detects, wherein resistive platinum wire at a certain temperature may be used
Catalysis gas flameless combustion, by increasing the heat conduction of branch shape in the resistance wire of heater wherein
Structure, can effectively increase the contact area of resistive platinum wire and gas under same space, have
Help improve the sensitivity of sensor, for the heating resistor layer of square contour, resistance therein
Filate shape can as it is shown in fig. 7,
It addition, be conducted to the heat of underlay substrate for reducing resistance wire further, can be such as Fig. 8
Shown in mesh 221 is set on the supporting region 220 of supporting layer 200, support can be made by mesh
The heat that layer is conducted to substrate is less, thus reduces heater power consumption further.
Wherein, in embodiments of the present invention, underlay substrate can be not only glass substrate, also
Can be ceramic substrate, flexible resin substrate etc..
Wherein, in the present invention, the heating resistor layer in heater can be as shown in Figure 1
Plane (i.e. heater is 2-dimensional planar type heater), the preferably heating resistor layer of heater
Can also be for non-planar (i.e. heater be three-dimensional structure heater), such as, heating resistor layer
Can concavely, convex or roughness etc. non-planar, when this heater is applied to gas
During sensor, the heater of three-dimensional structure is affected less by external air flow.
See the schematic diagram that Fig. 9, Fig. 9 are another heaters that embodiment of the present invention provides,
This heater include underlay substrate 100 and be successively set on described underlay substrate 100
Support layer 200 and heating resistor layer 300, described underlay substrate 100 is provided with groove 110,
And the projection that the resistance wire of heating resistor layer 300 is on underlay substrate is positioned at groove 110,
Between heating resistor layer 300 and described underlay substrate 100, sky is formed by described groove 110
Chamber, wherein, supporting layer 200 and heating resistor layer 300 are non-planar, all in such as Fig. 9
Shown concavity；
Such as, as shown in Figure 10, owing to the supporting region 210 of supporting layer 200 is in non-planar,
And the resistance wire of heating resistor layer 300 is close on the surface of supporting region 210 of supporting layer 200,
Thus form the heater of three-dimensional structure, and when this heater is for gas sensor, Ke Yiyou
Effect reduces the external air flow impact on sensor；
Heat in order to make heater produce is more evenly distributed, and makes resistance wire contact with sensing material
Area is bigger, equally arranges the heat conduction knot in branch shape on the resistance wire of above-mentioned heater
Structure, its structure is as shown in figure 11；
Wherein, in embodiments of the present invention, underlay substrate can be not only glass substrate, also
Can be ceramic substrate, flexible resin substrate etc..
See the signal that Figure 12, Figure 12 are another heaters that embodiment of the present invention provides
Figure, this heater includes underlay substrate 100 and is successively set on described underlay substrate 100
Supporting layer 200 and heating resistor layer 300, described underlay substrate 100 is provided with groove
110, and the projection that the resistance wire of heating resistor layer 300 is on underlay substrate is positioned at groove 110
In, by described groove 110 shape between described supporting layer 200 and described underlay substrate 100
Become cavity, wherein, supporting layer 200 and heating resistor layer 300 all recessed in as shown in figure 12
Convex the most flat-shaped.
Wherein, in the heater that the invention described above embodiment provides, underlay substrate upper groove
The degree of depth can be 1 μm～100 μm, preferably 20 μm～50 μm；Underlay substrate upper groove
Width is 100 μm～2000 μm, preferably 300 μm～1000 μm；Underlay substrate upper groove
A length of 100 μm～2000 μm, preferably 300 μm～1000 μm.
Wherein, in the heater that the invention described above embodiment provides, the thickness of described supporting layer
Degree can be 0.2 μm～3 μm, and its material can be silicon nitride, silica, such as, heater
Supporting layer can include at least one of which silicon nitride layer and/or at least one of which silicon oxide layer, such as,
The supporting layer of heater can include nitride multilayer silicon layer and multilayer silicon oxide layer, and silicon nitride
Layer and the alternately laminated setting of silicon oxide layer, the thickness of each layer of silicon nitride layer can be 0.1 μm
～0.5 μm, the thickness of each layer of silicon oxide layer can be 0.1 μm～0.5 μm, wherein, supporting layer
In the shape of supporting region can be the shapes such as square, circular, rhombus, triangle, hexagon.
Wherein, in the heater that the invention described above embodiment provides, the material of heating resistor layer
Material can be metal, metal alloy or semi-conducting material, can be such as gold, platinum, molybdenum, chromium,
Titanium, silicon etc., the thickness of heating resistor layer 300 can be between 0.1 μm～0.5 μm, therein
The live width of resistance wire can be 3 μm～20 μm, and distance between centers of tracks can be 3 μm～500 μm.
Wherein, in embodiments of the present invention, underlay substrate can be not only glass substrate, also
Can be ceramic substrate, flexible resin substrate etc..
See the schematic diagram that Figure 13, Figure 13 are a kind of heaters that embodiment of the present invention provides,
This heater include underlay substrate 100 and be arranged on described underlay substrate 100 add thermoelectricity
Resistance layer 300, such as, underlay substrate 100 can be glass substrate, described underlay substrate 100
On be provided with groove 110, wherein, the resistance wire of described heating resistor layer 300 is at described substrate base
Projection on plate 100 is positioned at outside described groove 110；
For the heater of said structure, by making between resistance wire and around resistance wire
Groove, it is possible to effectively slow down the transmission of heat on resistance wire, reduces heat dissipation；
For above-mentioned heater, for increasing resistance wire length in limited space, lifting adds
Thermal effect, heating resistor layer 300 equally uses non-linear shape as shown in figure 14；
Heat in order to make heater produce is more evenly distributed, and makes resistance wire contact with sensing material
Area is bigger, equally arranges the heat conduction knot in branch shape on the resistance wire of above-mentioned heater
Structure, its structure is as shown in figure 15；
Preferably, in order to reduce the heat that resistance wire transmits to underlay substrate further, described
Thermal insulation layer 700, wherein, thermal insulation layer it is additionally provided with between underlay substrate and described heating resistor layer
700 materials that can use can include silica, silicon nitride or both mixtures or resistance to
The macromolecular material (such as polyimides, epoxy resin etc.) of high temperature, such as, if heater
Heating-up temperature is more than 400 DEG C, and thermal insulation layer can use silica or silicon nitride material, preferably
Ground, thermal insulation layer 700 can include at least one of which silicon nitride layer and/or at least one of which silicon oxide layer,
Such as, the thermal insulation layer of heater can include nitride multilayer silicon layer and multilayer silicon oxide layer, and
Silicon nitride layer and the alternately laminated setting of silicon oxide layer, the thickness of each layer of silicon nitride layer can be
0.1 μm～0.5 μm, the thickness of each layer of silicon oxide layer can be 0.1 μm～0.5 μm, thermal insulation layer
Gross thickness be 0.2 μm～3 μm；
When the heating-up temperature of heater is below 400 DEG C, and thermal insulation layer can be selected for high temperature-resistant polymer
Material (such as polyimides, epoxy resin etc.), effect of heat insulation is more preferable, it addition, for improving heating
Resistive layer adhesion on underlay substrate, it is also possible between thermal insulation layer and heating resistor layer also
Arranging cushion, cushion can use the material such as silicon nitride or silica, is conducive to heating
Resistive layer is bonded on underlay substrate.
Additionally, embodiment of the present invention additionally provides a kind of sensor, including above-mentioned heater.
The sensor can be gas sensor, for current gas sensor, needs
Could work at a temperature of Yi Ding, the most all can be more than 200 DEG C, some sensors may require that and reach
To more than 500 DEG C, it is therefore desirable to heater assists, such as, for metal oxide sensor,
Its operation principle is: interacting with gas at the working temperature, its resistance changes with gas concentration
Become and change, the concentration of gas to be measured can be detected by the resistance of detection resistance wire；For urging
Changing combustion type gas sensor, its operation principle is: at a certain temperature, gas is at catalyst
Effect under there is flameless combustion, the resistance value of resistance wire also can change, such that it is able to logical
The resistance value crossing resistance wire obtains the concentration of gas to be measured.
By the heater in the present invention, it is possible to effectively reduce the power consumption of sensor, and help
In the sensitivity improving sensor.
Additionally, embodiment of the present invention additionally provides a kind of intelligent terminal, including above-mentioned heating
Device.Such as, this intelligent terminal can be smart mobile phone, wrist-watch etc..
For example, it is possible to the heater that embodiment of the present invention provides is integrated in based on glass substrate
Device in, on display floater；
For example, it is possible to as shown in figure 16 the gas sensor 2 comprising above-mentioned heater is integrated in
On intelligent terminal 1, by this gas sensor 2 real-time perception hazardous gas, when perceiving danger
During the gas of danger, remind user by the display screen 11 of intelligent terminal；
For example, it is possible to as shown in figure 17, the display screen peripheral at intelligent terminal 1 (is such as arranged on
On backboard) above-mentioned heater 3 is set, to tackle low temperature environment, when the temperature of intelligent terminal passes
When sensor senses environment temperature less than optimum working temperature, automatically start heater and proceed by
Heating.
Embodiment of the present invention additionally provides the preparation method of a kind of heater, is included in substrate base
Form heating resistor layer on plate, be additionally included on described underlay substrate formation groove.
Such as, the projection on described underlay substrate of the resistance wire of described heating resistor layer is positioned at institute
Stating outside groove, the preparation method of heater may include that
Described underlay substrate is formed described groove；
Packed layer is formed in described groove；
Described packed layer is formed described heating resistor layer；
Remove the packed layer in described groove, with at described heating resistor layer and described underlay substrate
Between formed cavity.
Preferably, after forming packed layer in described groove, filling out in removing described groove
Also include before filling layer: formed on described underlay substrate and be positioned at below described heating resistor layer
Supporting layer.
Preferably, in the preparation method of above-mentioned heater, described heating resistor layer includes non-
The resistance wire of linearity.
Preferably, in the preparation method of above-mentioned heater, the resistance of described heating resistor layer
The conductive structure in branch shape it is provided with on silk.
Preferably, in the preparation method of above-mentioned heater, described supporting layer includes cantilever portion
And for carrying the supporting region of resistance wire of described heating resistor layer, described supporting layer described
Mesh it is provided with on supporting region.
Preferably, in the preparation method of above-mentioned heater, the degree of depth of described groove is 20 μm
～50 μm, the width of described groove is 300 μm～1000 μm, a length of 300 μm of described groove
～1000 μm.
Preferably, in the preparation method of above-mentioned heater, the material of described packed layer includes
Following at least one: the modified polyimide of solubility, epoxy resin, poly-NMF,
Fluoro-based polymers.
Preferably, in the preparation method of above-mentioned heater, described supporting layer includes at least one
Layer silicon nitride layer and/or at least one of which silicon oxide layer.
Preferably, in the preparation method of above-mentioned heater, the thickness of described supporting layer is
0.2 μm～3 μm.
Wherein, in the preparation method of above-mentioned heater, the upper surface of described packed layer can be
Plane, to form plane described heating resistor layer, such as, the preparation method of this heater
Step S101～S104 can be included；
S101: as shown in figure 18 a, first coats photoresist on underlay substrate 100 surface, logical
Photoetching agent pattern 500 set in advance is produced in overexposure, development, and photoetching agent pattern 500 includes
Photoresist retains region and region removed by photoresist, and wherein photoresist removal region correspondence is formed
The opening shape of groove, it can be square, rectangle, rhombus, triangle, circle
Deng, by the way of wet etching or dry etching, then form desired figure, and remove surplus
Remaining photoresist, thus on underlay substrate 100, form groove 110 as shown in fig. 18b, wherein,
When underlay substrate is glass substrate, preferred wet etching liquid can include hydrofluoric acid, sulfuric acid,
One or more in nitric acid, natrium nitrosum and acetic acid, and can joining by regulation solution
Ratio, temperature etc. regulate etch rate；Preferably dry etching source may include that C4H8, CHF3,
CF4, SF6 etc.；
Wherein, the degree of depth of underlay substrate upper groove can be 1 μm～100 μm, preferably 20 μm
～50 μm；The width of underlay substrate upper groove is 100 μm～2000 μm, preferably 300 μm
～1000 μm；A length of 100 μm of underlay substrate upper groove～2000 μm, preferably 300 μm
～1000 μm.
S102: can with use spin coating, scratch, print, the mode such as printing is at the table of underlay substrate
Topcoating covers the organic gel material of solubility, is filled and led up the groove 110 etched in step S101, and
Will fill material heat cure, thus as shown in Figure 18 c in the groove 110 of underlay substrate shape
Become packed layer 600；
Such as, the material of packed layer 600 can be solubility modified polyimide material (as
The main chain of polyimide molecule introduces flexible group, or polyimide molecule is surpassed
Branched structure design etc.), solidify at 200-300 DEG C after coating is good, additionally, packed layer
Material can also be resistant to elevated temperatures epoxy resin, poly-NMF or fluoro-based polymers etc..
S103: formed and be successively set on the supporting layer on described packed layer and heating resistor layer；
For example, it is possible to first make the supporting layer of desirable pattern on packed layer 600, exist the most again
The heating resistor layer of desirable pattern is made on supporting layer；
Preferably, it is possible to use semi-transparent mask plate concurrently forms described support in a structure technique
Layer and described heating resistor layer, such as, this step can include S1031～S1037；
S1031: forming dielectric film on packed layer, this dielectric film is used for forming supporting layer,
As shown in Figure 18 d, plasma reinforced chemical vapour deposition or low pressure chemical phase can be used to sink
Amassing and form dielectric film 201 on the surface of underlay substrate, wherein, the thickness of dielectric film 201 can
Thinking 0.2 μm～3 μm, its material can be silicon nitride, silica, such as, dielectric film 201
At least one of which silicon nitride layer and/or at least one of which silicon oxide layer, such as, dielectric film can be included
201 can include nitride multilayer silicon layer and multilayer silicon oxide layer, and silicon nitride layer and silicon oxide layer
Alternately laminated setting, the thickness of each layer of silicon nitride layer can be 0.1 μm～0.5 μm, each layer
The thickness of silicon oxide layer can be 0.1 μm～0.5 μm.
S1032: form resistive material film, such as, this resistance material on described dielectric film
The material of film can be metal, metal alloy or semi-conducting material, can be such as gold, platinum,
Molybdenum, chromium, titanium, silicon etc., can make formation, resistance by the way of sputtering, evaporating or be deposited with
The thickness of material film can be between 0.1 μm～0.5 μm；
S1033: form photoetching agent pattern, described photoetching agent pattern on described resistive material film
Region is fully retained including photoresist, photoresist half retains region and region removed by photoresist,
Wherein, described photoresist is fully retained the corresponding described heating resistor layer in region, described photoresist half
The part that the corresponding described supporting layer in reservation region is not overlapping with described heating resistor layer, such as, can
To form above-mentioned photoetching agent pattern by semi-transparent mask plate；
S1034: remove and be positioned at the described resistive material film in described photoresist removal region and be positioned at
The described dielectric film in region removed by described photoresist, it is for instance possible to use different etching works
Skill is removed respectively and is positioned at the described resistive material film in described photoresist removal region and is positioned at described
The described dielectric film in region removed by photoresist, and dielectric film forms required figure by this etching
The supporting layer of case；
S1035: the photoresist that described photoresist half is retained region carries out ashing process；
S1036: remove the described resistive material film being positioned at described photoresist half reservation region, example
As, etching technics can be used to remove the described resistance material being positioned at described photoresist half reservation region
Material film, resistive material film forms the heating resistor layer of desirable pattern by this after being etched；
S1037: removal is positioned at described photoresist and the photoresist in region is fully retained, thus such as Figure 18 e
Shown formation is successively set on the supporting layer 200 on described packed layer 600 and heating resistor layer
300。
S104: the packed layer 600 in removal groove, thus shape between supporting layer and underlay substrate
Become cavity, thus obtain heater as shown in Figure 1, it is for instance possible to use response type ion
Etching or inductively coupled plasma dry etching technology, with oxygen do etching source, helium the back of the body cold
Mode by groove packed layer be ashed etch away.It addition, for using soluble polymer
Packed layer, such as polymethyl methacrylate, dichloroethanes, acetone, tetrahydrochysene furan can be used
Packed layer is dissolved by equal solvent of muttering.
Wherein, in embodiments of the present invention, underlay substrate can be not only glass substrate, also
Can be ceramic substrate, flexible resin substrate etc..
Additionally, in the preparation method of the heater of embodiment of the present invention offer, described filling
The upper surface of layer can also think on-plane surface, to form non-planar described heating resistor layer, example
As, for the heater shown in Fig. 9, its preparation method can include step S201～S204；
S201: as shown in figure 19a, first coats photoresist on underlay substrate 100 surface, logical
Photoetching agent pattern 500 set in advance is produced in overexposure, development, exists the most as shown in fig. 19b
Form groove 110 on underlay substrate 100, wherein, form photoetching agent pattern 500 and etching shape
The concrete mode becoming groove 110 can be identical with step S101, and here is omitted；
S202: can with use spin coating, scratch, print, the mode such as printing is at the table of underlay substrate
Topcoating covers the high-molecular organic material of solubility, is filled out the groove 110 etched in step S201
Flat, then make the portion of material of filling be corroded by the way of exposure imaging, produce as
Shape shown in Figure 19 c, the material heat cure will filled subsequently, forming upper surface is concavity
Packed layer 600；
Such as, the material of packed layer 600 can be solubility modified polyimide material (as
The main chain of polyimide molecule introduces flexible group, or polyimide molecule is surpassed
Branched structure design etc.), solidify at 200-300 DEG C after coating is good, additionally, packed layer
Material can also be resistant to elevated temperatures epoxy resin, poly-NMF or fluoro-based polymers etc..
S203: formed and be successively set on the supporting layer on described packed layer 600 and add thermal resistance
Layer；
For example, it is possible to first make the supporting layer of desirable pattern on packed layer 600, exist the most again
The heating resistor layer of desirable pattern is made on supporting layer；
Preferably, described supporting layer and described heating can be concurrently formed in a structure technique
Resistive layer, for example, it is possible to form dielectric film 201, then as shown in Figure 19 d on packed layer
Dielectric film forms resistive material film, by thin to dielectric film 201 and resistance material
Film carries out a patterning processes and processes, and dielectric film 201 is formed after this patterning processes processes
Supporting layer, resistive material film forms heating resistor layer after this patterning processes processes, carries out
The concrete mode of patterning processes can be identical with S1031～S1037, and here is omitted；
Wherein, due to dielectric film 201 and resistive material film all by deposition, sputtering,
The mode of evaporation or evaporation is formed, therefore dielectric film and the film shape of resistive material film
Can be with the upper surface mating shapes of packed layer, after being patterned technique, it is possible to formed such as
Supporting layer shown in Figure 19 e and heating resistor layer.
S204: the packed layer 600 in removal groove, thus shape between supporting layer and underlay substrate
Become cavity, thus obtain heater as shown in Figure 9.
For the heater shown in Figure 12, its preparation method can include step S301～S304；
S301: as illustrated in fig. 20, first coats photoresist on underlay substrate 100 surface, logical
Photoetching agent pattern 500 set in advance is produced in overexposure, development, exists the most as shown in fig. 20b
Form groove 110 on underlay substrate 100, wherein, form photoetching agent pattern 500 and etching shape
The concrete mode becoming groove 110 can be identical with step S101, and here is omitted；
S302: can with use spin coating, scratch, print, the mode such as printing is at the table of underlay substrate
Topcoating covers the high-molecular organic material of solubility, is filled out the groove 110 etched in step S301
Flat, then make the portion of material of filling be corroded by the way of exposure imaging, produce as
Shape shown in Figure 20 c, the material heat cure will filled subsequently, it is concavo-convex for forming upper surface
The most flat-shaped packed layer 600；
S303: formed and be successively set on the supporting layer on described packed layer 600 and add thermal resistance
Layer；
For example, it is possible to first make the supporting layer of desirable pattern on packed layer 600, exist the most again
The heating resistor layer of desirable pattern is made on supporting layer；
Preferably, described supporting layer and described heating can be concurrently formed in a structure technique
Resistive layer, for example, it is possible to form dielectric film 201, then as shown in Figure 20 d on packed layer
Dielectric film forms resistive material film, by thin to dielectric film 201 and resistance material
Film carries out a patterning processes and processes, and dielectric film 201 is formed after this patterning processes processes
Supporting layer, resistive material film is formation heating resistor layer after this patterning processes processes, wherein,
The concrete mode being patterned technique can be identical with S1031～S1037, and here is omitted；
Wherein, due to dielectric film 201 and resistive material film all by deposition, sputtering,
The mode of evaporation or evaporation is formed, therefore dielectric film and the film shape of resistive material film
Can be with the upper surface mating shapes of packed layer, after being patterned technique, it is possible to formed such as
Supporting layer shown in Figure 20 e and heating resistor layer.
S304: the packed layer 600 in removal groove, thus shape between supporting layer and underlay substrate
Become cavity, thus obtain heater as shown in figure 12.
Such as, the projection on described underlay substrate of the resistance wire of described heating resistor layer is positioned at institute
Stating outside groove, the preparation method of heater may include that
Described underlay substrate is formed resistive material film；
Forming photoetching agent pattern on described resistive material film, described photoetching agent pattern includes light
Photoresist removes region and described photoresist retains region, and region correspondence institute removed by described photoresist
Stating groove, described photoresist retains the corresponding described heating resistor layer in region；
Remove resistive material film and the substrate of segment thickness being positioned at described photoresist removal region
Substrate；
Remove described photoresist and retain the photoresist in region.
Preferably, be additionally included in formed between described underlay substrate and described heating resistor layer heat insulation
Layer.
Such as, for the heater shown in Figure 13, its preparation method may include that
S401: first underlay substrate 100 (can be glass substrate) upper formed for make every
The dielectric film 701 of thermosphere, its material that can use can include silica, silicon nitride or two
The mixture of person or high temperature-resistant polymer material (such as polyimides, epoxy resin etc.), as
Really heating-up temperature is more than 400 DEG C, and dielectric film uses silica or silicon nitride preferably, example
As plasma reinforced chemical vapour deposition or low-pressure chemical vapor deposition can be used at underlay substrate table
Face forms dielectric film, generally can use silicon nitride, silica or both composite beds alternately,
Thickness in monolayer can be 0.1 μm～0.5 μm, and film layer gross thickness is in 0.2 μm～3 μm；
When the heating-up temperature of heater is below 400 DEG C, dielectric film can be selected for resistant to elevated temperatures height
Molecular material (such as polyimides, epoxy resin etc.), effect of heat insulation is more preferable, it addition, for improving
Heating resistor layer adhesion on underlay substrate, after making macromolecule layer is complete, it is also possible to
Increasing cushion on macromolecule layer, cushion can use the material such as silicon nitride or silica,
Heating resistor layer is conducive to be bonded on underlay substrate；
S402: as shown in fig. 21 a, makes resistive material film 301 on dielectric film 701,
The material of this resistive material film can be metal, metal alloy or semi-conducting material, such as may be used
Think gold, platinum, molybdenum, chromium, titanium, silicon etc., can by sputtering, evaporate or be deposited with by the way of system
Being formed, the thickness of resistive material film can be between 0.1 μm～0.5 μm；
S403: as shown in fig. 21b, forms photoetching agent pattern 800 on described resistive material film,
Photoetching agent pattern 800 includes that region removed by photoresist and photoresist retains region, and photoresist goes
Except the corresponding described groove in region, photoresist retains the corresponding described heating resistor layer in region；
S404: as shown in Figure 21 c, removes the resistance material being positioned at described photoresist removal region
Film and the underlay substrate of segment thickness；
Minimizing technology can use response type ion etching, inductively coupled plasma dry etching,
Magnetic neutral loop discharge dry etchings etc., first to dielectric film 701 and resistive material film 301
Perform etching, dielectric film 701 and resistive material film 301 are patterned, then by etching
After resistive material film or photoresist layer be mask, with C4H8, CHF3, CF4, SF6,
Ar etc. are etching source, perform etching underlay substrate, produce heat insulation groove 110, etching
The degree of depth can be 10 μm～100 μm, when etching after resistive material film and single-layer lithography glue not
When can meet demand, photoresist can be coated repeatedly on surface and patterning does mask, until reaching
To required etching depth；
S405: remove described photoresist and retain the photoresist in region, thus formed shown in Figure 13
Heater.
The preparation method of the heater that embodiment of the present invention provides is not only able to reduce heater merit
Consumption, improves the performance of heater, it is also possible to make micro-heating of superior performance on the glass substrate
Device, contributes to microsensor, micro-heater is integrated in display floater or other are based on glass
On the device of substrate, contribute to expanding device performance and function.
Embodiment of above is merely to illustrate the present invention, and not limitation of the present invention, relevant
The those of ordinary skill of technical field, without departing from the spirit and scope of the present invention,
Can also make a variety of changes and modification, the technical scheme of the most all equivalents falls within the present invention
Category, the scope of patent protection of the present invention should be defined by the claims.
Claims (23)
1. a heater, including underlay substrate and be arranged on the heating on described underlay substrate
Resistive layer, it is characterised in that be provided with groove on described underlay substrate.
Heater the most according to claim 1, it is characterised in that described heating resistor layer
Resistance wire projection on described underlay substrate be positioned at described groove, and by described groove
Cavity is formed between described heating resistor layer and described underlay substrate.
Heater the most according to claim 2, it is characterised in that described heating resistor layer
For non-planar.
Heater the most according to claim 2, it is characterised in that described heating resistor layer
Resistance wire on be provided with the conductive structure in branch shape.
Heater the most according to claim 2, it is characterised in that described heating resistor layer
Resistance wire including non-linear shape.
6. according to the arbitrary described heater of claim 2-5, it is characterised in that described substrate
The supporting layer being positioned at below described heating resistor layer it is additionally provided with on substrate.
Heater the most according to claim 6, it is characterised in that described supporting layer includes
Cantilever portion and for carrying the supporting region of resistance wire of described heating resistor layer, described supporting layer
Described supporting region on be provided with mesh.
Heater the most according to claim 6, it is characterised in that described supporting layer includes
At least one of which silicon nitride layer and/or at least one of which silicon oxide layer.
Heater the most according to claim 6, it is characterised in that the thickness of described supporting layer
Degree is 0.2 μm～3 μm.
Heater the most according to claim 2, it is characterised in that described groove deep
Degree is 20 μm～50 μm, and the width of described groove is 300 μm～1000 μm, the length of described groove
Degree is 300 μm～1000 μm.
11. heaters according to claim 1, it is characterised in that described in add thermal resistance
The projection on described underlay substrate of the resistance wire of layer is positioned at outside described groove.
12. heaters according to claim 11, it is characterised in that described underlay substrate
And it is additionally provided with thermal insulation layer between described heating resistor layer.
13. heaters according to claim 12, it is characterised in that described thermal insulation layer with
It is additionally provided with cushion between described heating resistor layer.
14. 1 kinds of sensors, it is characterised in that include arbitrary described the adding of claim 1-13
Hot device.
15. 1 kinds of intelligent terminals, it is characterised in that include that claim 1-13 is arbitrary described
Heater.
The preparation method of 16. 1 kinds of heaters, is included on underlay substrate formation heating resistor layer,
It is characterized in that, be additionally included on described underlay substrate formation groove.
17. the preparation method of heater according to claim 16, it is characterised in that
Form described groove on described underlay substrate and described heating resistor layer include:
Described underlay substrate is formed described groove；
Packed layer is formed in described groove；
Described packed layer is formed described heating resistor layer；
Remove the packed layer in described groove, with at described heating resistor layer and described underlay substrate
Between formed cavity.
The preparation method of 18. heaters according to claim 17, it is characterised in that
After forming packed layer in described groove, also include before the packed layer in removing described groove:
Described underlay substrate is formed and is positioned at the supporting layer below described heating resistor layer.
The preparation method of 19. heaters according to claim 18, it is characterised in that
Patterning processes concurrently forms described supporting layer and described heating resistor layer.
The preparation method of 20. heaters according to claim 19, it is characterised in that institute
State and in a patterning processes, concurrently form described supporting layer and described heating resistor layer includes:
Packed layer is formed dielectric film；
Described dielectric film is formed resistive material film；
Forming photoetching agent pattern on described resistive material film, described photoetching agent pattern includes light
Photoresist is fully retained region, photoresist half retains region and photoresist removal region, wherein,
Described photoresist is fully retained the corresponding described heating resistor layer in region, described photoresist half reserved area
The part that the corresponding described supporting layer in territory is not overlapping with described heating resistor layer；
Remove and be positioned at the described resistive material film in described photoresist removal region and be positioned at described light
Photoresist removes the described dielectric film in region；
The photoresist that described photoresist half is retained region carries out ashing process；
Remove the described resistive material film being positioned at described photoresist half reservation region；
Removal is positioned at described photoresist and the photoresist in region is fully retained.
The preparation method of 21. heaters according to claim 17, it is characterised in that institute
The upper surface stating packed layer is on-plane surface, to form non-planar described heating resistor layer.
The preparation method of 22. heaters according to claim 16, it is characterised in that institute
State the projection on described underlay substrate of the resistance wire of heating resistor layer to be positioned at outside described groove.
The preparation method of 23. heaters according to claim 22, it is characterised in that
Form described groove on described underlay substrate and described heating resistor layer include:
Described underlay substrate is formed resistive material film；
Forming photoetching agent pattern on described resistive material film, described photoetching agent pattern includes light
Photoresist removes region and photoresist retains region, and it is corresponding described recessed that region removed by described photoresist
Groove, described photoresist retains the corresponding described heating resistor layer in region；
Remove resistive material film and the substrate of segment thickness being positioned at described photoresist removal region
Substrate；
Remove described photoresist and retain the photoresist in region.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107089638A (en) * | 2017-04-24 | 2017-08-25 | 广东美的制冷设备有限公司 | Microheater and its processing method |
| CN108751122A (en) * | 2018-05-17 | 2018-11-06 | 中国科学院上海微系统与信息技术研究所 | A kind of three-dimensional micro-heater and preparation method thereof |
| CN108766981A (en) * | 2018-05-28 | 2018-11-06 | 京东方科技集团股份有限公司 | A kind of production method of adiabatic membrane, heat insulating construction, display device |
| CN110798916A (en) * | 2019-11-19 | 2020-02-14 | 京东方科技集团股份有限公司 | Heater, preparation method thereof, sensor and intelligent terminal |
| CN111650771A (en) * | 2020-06-16 | 2020-09-11 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| CN111707844A (en) * | 2020-05-29 | 2020-09-25 | 上海应用技术大学 | Wind speed sensor and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030098300A1 (en) * | 2001-11-23 | 2003-05-29 | Jusung Engineering Co., Ltd. | Molding heater for heating semiconductor wafer and fabrication method thereof |
| CN101795505A (en) * | 2010-02-11 | 2010-08-04 | 中国科学院上海微系统与信息技术研究所 | Low-power consumption micro-heater with mesh-structured heating film and fabrication method thereof |
| CN101917784A (en) * | 2010-09-10 | 2010-12-15 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional micro heater with groove-shaped heating film region and manufacturing method thereof |
| CN101938862A (en) * | 2010-09-10 | 2011-01-05 | 上海芯敏微系统技术有限公司 | Solenoid type heating resistor-containing three-dimensional microheater and manufacturing method thereof |
| CN205648021U (en) * | 2016-05-30 | 2016-10-12 | 京东方科技集团股份有限公司 | Heater, sensor and intelligent terminal |
-
2016
- 2016-05-30 CN CN201610371820.0A patent/CN105873249B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030098300A1 (en) * | 2001-11-23 | 2003-05-29 | Jusung Engineering Co., Ltd. | Molding heater for heating semiconductor wafer and fabrication method thereof |
| CN101795505A (en) * | 2010-02-11 | 2010-08-04 | 中国科学院上海微系统与信息技术研究所 | Low-power consumption micro-heater with mesh-structured heating film and fabrication method thereof |
| CN101917784A (en) * | 2010-09-10 | 2010-12-15 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional micro heater with groove-shaped heating film region and manufacturing method thereof |
| CN101938862A (en) * | 2010-09-10 | 2011-01-05 | 上海芯敏微系统技术有限公司 | Solenoid type heating resistor-containing three-dimensional microheater and manufacturing method thereof |
| CN205648021U (en) * | 2016-05-30 | 2016-10-12 | 京东方科技集团股份有限公司 | Heater, sensor and intelligent terminal |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107089638A (en) * | 2017-04-24 | 2017-08-25 | 广东美的制冷设备有限公司 | Microheater and its processing method |
| CN108751122A (en) * | 2018-05-17 | 2018-11-06 | 中国科学院上海微系统与信息技术研究所 | A kind of three-dimensional micro-heater and preparation method thereof |
| CN108766981A (en) * | 2018-05-28 | 2018-11-06 | 京东方科技集团股份有限公司 | A kind of production method of adiabatic membrane, heat insulating construction, display device |
| US10734592B2 (en) | 2018-05-28 | 2020-08-04 | Hefei Boe Optoelectronics Technology Co., Ltd. | Method for manufacturing thermal insulation film, thermal insulation structure, and display device |
| CN108766981B (en) * | 2018-05-28 | 2021-01-22 | 京东方科技集团股份有限公司 | Manufacturing method of heat insulation film, heat insulation structure and display device |
| CN110798916A (en) * | 2019-11-19 | 2020-02-14 | 京东方科技集团股份有限公司 | Heater, preparation method thereof, sensor and intelligent terminal |
| CN111707844A (en) * | 2020-05-29 | 2020-09-25 | 上海应用技术大学 | Wind speed sensor and preparation method thereof |
| CN111707844B (en) * | 2020-05-29 | 2022-02-11 | 上海应用技术大学 | Wind speed sensor and preparation method thereof |
| CN111650771A (en) * | 2020-06-16 | 2020-09-11 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
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