CN101938862A - Solenoid type heating resistor-containing three-dimensional microheater and manufacturing method thereof - Google Patents
Solenoid type heating resistor-containing three-dimensional microheater and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a solenoid type heating resistor-containing three-dimensional microheater and a manufacturing method thereof. The solenoid type heating resistor-containing three-dimensional microheater is characterized in that: a groove-shaped heating area supporting film is connected with a substrate frame through a supporting suspension girder; the cross section of the groove-shaped heating area supporting film has a V-shaped or reverse trapezoidal structure; an upper heating resistance wire is connected with a lower heating resistance wire to form a solenoid type heating resistor embedded in the heating area supporting film and the solenoid type heating resistor is connected with an electrode on the substrate frame through a lead on the supporting suspension girder; and the heating area supporting film and the solenoid type heating resistor embedded in the heating area supporting film are supported by the supporting suspension girder to be suspended on a silicon substrate. The heating resistor of the three-dimensional microheater provided by the invention has a solenoid type structure and is embedded in the heating area supporting film, so annularly heating can be realized and the heating efficiency is high. The three-dimensional microheater is particularly suitable for the fields of infrared light sources and sensing.
Description
Technical field
The present invention relates to a kind of three-dimensional micro-heater and preparation method thereof, belong to microelectromechanical systems (MEMS) field with helix tube type heating resistor.
Background technology
Along with the continuous development of micro-processing technology, field extensive uses such as environmental monitoring and infrared light supply have been begun at detection of gas based on the microheater of MEMS technology.Because it is the continuous popularization of using and deeply, also strong day by day to the low-power consumption of microheater, low cost, high-performance, highly reliable requirement.How to produce the high performance heater of low-power consumption is the target that those skilled in that art pursue always.
Microheater based on silicon substrate divides from the support membrane structure at present, mainly contains two types, is respectively sealing membrane type (closed membrane type) and outstanding membrane type (suspended membrane type).The decline support membrane border of type heater of closing membrane all links to each other with substrate framework, realize the release of heating film region by back side bulk silicon processing technique corrosion substrate silicon, as M.Gall, The Si-planar-pellistor:alow-power pellistor sensor in Si thin-film technology, Sensors and Actuators B, Vol.4 (1991), pp.533-538.Outstanding membrane type microheater utilizes several strip support cantilever beams that the center heating film region is linked to each other with substrate framework usually, utilize the front body silicon processing technique to realize the release of heating film region, as Michael Gaitan, et.al, Micro-hotplate devices and methods for theirfabrication, US Patent NO.5,464,966.Along with the development of more than ten years, in order to satisfy different demands, a variety of shapes have appearred in the heating film region of the microheater of sealing membrane type and the microheater of outstanding membrane type, as circle, rectangle, and strip, perhaps polygon etc.But no matter be any shape, these heating film regions all are planes, are a kind of two-dimensional structures.
Yet the microheater at some this plane formula heating film region of field planted agent time spent but has some shortcomings.Such as, during as infrared light supply, the spread heat of plane formula heater is subjected to the influence of air-flow bigger.When being used for the gas sensor of principle of catalyst combustion, catalyst is not high in the coverage rate in the central mode district of plane formula heater, and the efficiency of heating surface is lower, has influenced the sensitivity of transducer.Therefore, how designing a kind of low-power consumption, the high efficiency of heating surface and high performance heater is the key that addresses these problems.
The present invention intends providing a kind of three-dimensional micro-heater with helix tube type heating resistor that utilizes the anisotropic silicon wet corrosion technique to make, and has solved a difficult problem of making resistive heater in inside grooves based on the stripping technology that sprays the glue photoetching.The microheater of made is because its unique three-dimensional structure can realize the annular heating, and efficiency of heating surface height maybe will solve the limitation of plane microheater in some application.
Summary of the invention
The object of the present invention is to provide a kind of helix tube type three-dimensional micro-heater and preparation method thereof, thereby solve the limitation of present plane microheater in some application.
The present invention utilizes anisotropic silicon wet etching corrosion substrate silicon to form the groove that cross section is " V " font or inverted trapezoidal structure, thereby forms the groove shaped thermal treatment zone support membrane that cross section is " V " font or inverted trapezoidal structure by growth or cvd silicon oxide and silicon nitride in this groove.Utilize silicon anisotropic etching liquid that the otherness of different crystal orientations corrosion rate has been made and silicon＜100 simultaneously〉the last resistance wire brace summer (as shown in Figure 1) of crystal orientation (40～+ 40) in a certain angle.By making resistive heater and following resistive heater on last resistive heater brace summer and the thermal treatment zone support membrane respectively based on the stripping technology (lift-off) of spray glue photoetching.On, following resistive heater link to each other to form one and is embedded in the helix tube type heating resistor in the support membrane of the thermal treatment zone and links to each other with electrode on the substrate framework by the lead-in wire that supports in the overarm.At last by anisotropic silicon wet etching corrosion substrate silicon releasing structure, make thermal treatment zone support membrane and embed wherein helix tube type heating resistor at the support low suspension that supports overarm on substrate silicon.
The present invention only needs three photolithography plates just can realize the making of described three-dimensional micro-heater, and groove and film discharge and all adopt the anisotropic silicon wet etching, so processing step is simple and clear, and be with low cost, and controllability is good.
The structure of a kind of three-dimensional micro-heater with helix tube type heating resistor provided by the invention in sum is shown in Fig. 2 (a), comprise: substrate framework 1, last resistive heater 2, following resistive heater 3, last resistive heater brace summer 4, thermal treatment zone support membrane 5, support overarm 6, lead-in wire 7, electrode 8 and heat insulation cavity 9, its architectural feature is:
1. cross section is " V " font or falls trapezoidal thermal treatment zone support membrane and links to each other with substrate framework by supporting overarm, and last resistive heater brace summer is across on the support membrane of the thermal treatment zone, and with silicon＜100 crystal orientation becomes-40～+ 40 angles of spending.
2. go up resistive heater and be arranged on the resistive heater brace summer, following resistive heater is arranged in the inside of thermal treatment zone support membrane with broken line form, and upper and lower resistive heater links to each other and forms the heating resistor of a helix tube type structure.
3. two lead-in wires are arranged in any two and support in the overarm heating resistor of connection helix tube type structure and the electrode on the substrate framework.
4. the below of thermal treatment zone support membrane and support overarm is the heat insulation cavity that the anisotropic silicon wet etching forms, and thermal treatment zone support membrane is supported and suspended on the substrate silicon by supporting overarm.
Another object of the present invention is to provide a kind of manufacture method with three-dimensional micro-heater of helix tube type heating resistor, and its concrete making step is as follows:
1. substrate is selected.Substrate only limits to the silicon chip of (100) face.
2. make the front etch window that is used to form groove structure, definition simultaneously is used to form the silicon oxide layer of resistive heater brace summer.At first on the surface of N type or P type (100) silicon chip, adopt the method for thermal oxidation, low-pressure chemical vapor deposition (LPCVD) or plasma reinforced chemical vapour deposition (PECVD) to make the silicon oxide film of a layer thickness between 0.1～3.0 micron.Carry out photoetching making then and go out graph window; under the protection of photoresist, utilize the thoroughly silica of etching exposure of reactive ion etching (RIE) or ion beam etching (Ion-beam); form the front etch window; definition simultaneously is used to form the shape of the silicon oxide layer of resistive heater brace summer, shown in Fig. 3 (a).
3. make the groove that cross section is " V " font or inverted trapezoidal structure, discharge the silicon oxide layer that is used to form the resistive heater brace summer simultaneously.Utilize silicon anisotropic etching liquid to erode away the groove that cross section is " V " font or inverted trapezoidal structure by the corrosion window that step 2 forms on silicon chip under the protection of silica, depth of groove is between 5～150 microns, shown in Fig. 3 (b).Corrosive liquid has multiple choices, such as: KOH (potassium hydroxide), TMAH (Tetramethylammonium hydroxide), perhaps EPW (ethylenediamine, catechol and water) etc.
4. make thermal treatment zone support membrane and last resistive heater brace summer.Method by thermal oxidation is growth one deck silica in the groove of " V " font or inverted trapezoidal structure at cross section, thickness is between 0.2～1.0 micron, deposition one deck silicon nitride on the silica of the silica of method in groove by low-pressure chemical vapor deposition (LPCVD) and last resistive heater brace summer again, thickness is between 0.2～1.0 micron, then can be once more method cvd silicon oxide and silicon nitride successively by low-pressure chemical vapor deposition, form multilayer complex films, shown in Fig. 3 (c).Total number of plies of composite membrane is 2～8 layers, and gross thickness is between 0.4～6.0 micron.
5. make upper and lower resistive heater, lead-in wire and electrode.Spray glue photoetching (photoresist thickness is 1～10 micron) defines resistive heater on the multilayer complex films of step 4, the figure of lead-in wire and electrode, the titanium platinum of sputter one deck 0.2～2.0 micron thickness has just formed resistive heater after last acetone removes photoresist then, lead-in wire and electrode are shown in Fig. 3 (d).
6. make thermal treatment zone support membrane and support the release window of hanging oneself from a beam.Can be divided into two classes according to the direction difference that supports overarm: a class is to support the direction and＜100 of overarm〉angle in crystal orientation remains on ± 30 spend in; its manufacture method is: positive photoetching defines the corrosion window graphics that is used to discharge heating film region and supports overarm; under the protection of photoresist, utilize reactive ion etching (RIE) or ion beam etching (Ion-beam) the thoroughly silica and the silicon nitride composite membrane of etching exposure, form film and discharge window.Another kind of is the direction and＜110 that supports overarm〉angle in crystal orientation remains on ± 15 spend in, its manufacture method is: the first step, positive photoetching defines the corrosion window graphics that is used to discharge heating film region and supports overarm, the silica and the silicon nitride composite membrane that utilize the thorough etching of reactive ion etching (RIE) or ion beam etching (Ion-beam) to expose under the protection of photoresist; Second step, utilize deep reaction ion etching (DRIE) technology etched substrate silicon, etching depth is greater than 0.7 times that supports the overarm width; Just form film after removing photoresist at last and discharge window.
7. the release of thermal treatment zone support membrane and support overarm.Utilize anisotropic etchant to discharge window corrosion substrate silicon, and below central mode district and support overarm, form heat insulation cavity, shown in Fig. 3 (e) by film.Corrosive liquid has multiple choices, such as: KOH (potassium hydroxide), TMAH (Tetramethylammonium hydroxide), perhaps EPW (ethylenediamine, catechol and water) etc.
Traditional relatively plane formula two dimension microheater based on MEMS technology, the main feature of a kind of three-dimensional micro-heater with helix tube type heating resistor provided by the invention and preparation method thereof is as follows:
1. upper and lower resistive heater link to each other to form a helix tube type heating resistor and traditional plane formula heating resistor structurally has tangible difference, the former is a three-dimensional structure and the latter is a kind of two-dimensional structure, this helix tube type heating resistor can be realized the annular heating, and the efficiency of heating surface is higher.
2. heating resistor is embedded in the heater support membrane of groove shaped, has reduced heat dissipation, can effectively reduce the power consumption of heater.
3. heater of the present invention utilizes anisotropy to discharge corrosion based on (100) silicon chip and makes, and is not only with low cost, and the controllability height of technology, also is easy to array and batch process.
4. the advantage of heater of the present invention also is embodied in the application of different field.During as infrared light supply, the resistive heater of embedding can form the light source that heat is concentrated, and is subjected to airflow influence little, good stability, and anti-jamming capacity is strong.When being used for the biochemical sensitive field, catalyst can be implanted in the groove structure, realizes the annular heating to catalyst, and efficient is higher, is beneficial to the performance that improves transducer.
Description of drawings
Fig. 1 is the vertical view of the heating region of the three-dimensional micro-heater with helix tube type heating resistor provided by the invention.
Fig. 2 is the perspective view with three-dimensional micro-heater of helix tube type heating resistor provided by the invention, wherein (a) is the perspective view of the three-dimensional micro-heater with helix tube type heating resistor of two support overarms, (b) is the enlarged drawing of the center heating region of this heater.
Fig. 3 is the main schematic flow sheet with three-dimensional micro-heater of helix tube type heating resistor provided by the invention.Wherein, (a) for making the front etch window that is used to form groove structure, (b) for making the groove of cross section " V " font or inverted trapezoidal structure, (c) for making thermal treatment zone support membrane and last resistive heater brace summer, (d) for making upper and lower resistive heater, lead-in wire and electrode, (e) for discharging thermal treatment zone support membrane and supporting overarm.
Fig. 4 is the perspective view of the three-dimensional micro-heater with helix tube type heating resistor in the embodiment of the invention 2, wherein (a) is the perspective view of the three-dimensional micro-heater with helix tube type heating resistor of four support overarms, (b) is the enlarged drawing of the center heating region of this heater.
1 is substrate framework among the figure, and 2 is last resistive heater, and 3 are following resistive heater, and 4 be last resistive heater brace summer, and 5 be thermal treatment zone support membrane, and 6 for supporting overarm, and 7 for going between, and 8 is that electrode and 9 is heat insulation cavity.
Embodiment
Embodiment 1:
The structural representation of present embodiment is referring to shown in Fig. 2 (a), and concrete manufacture method is as follows:
1. substrate is selected: 4 inches silicon chips selecting N type (100) face are as substrate, and resistivity 3-8 Ω cm, silicon wafer thickness are 350 ± 10 microns, the angular error of side cut＜1%.
2. make the front etch window be used to form groove structure, definition simultaneously is used to form the silicon oxide layer of resistive heater brace summer: the method for at first utilizing thermal oxidation is 1.0 microns a silicon oxide film at the silicon chip surface layer thickness of growing.Carry out positive photoetching then and make graph window, under the protection of photoresist, utilize the thoroughly silica of etching exposure of reactive ion etching (RIE), form the front etch window, define the shape of the silicon oxide layer that is used to form the resistive heater brace summer simultaneously.
3. make the groove that cross section is " V " font or inverted trapezoidal structure; discharge the silicon oxide layer that is used to form the resistive heater brace summer simultaneously: the corrosion window that utilizes the KOH corrosive liquid to form by step 2 under the protection of silica erodes away reversed-trapezoid shape on silicon chip groove, depth of groove is about 30 microns.
4. make thermal treatment zone support membrane and last resistive heater brace summer: utilizing the method for the thermal oxidation layer thickness of growing earlier is that to utilize the method for low-pressure chemical vapor deposition (LPCVD) to deposit a layer thickness again be 0.3 micron silicon nitride for 0.5 micron silica.
5. make upper and lower resistive heater, lead-in wire and electrode: spray glue photoetching (photoresist thickness is 4 microns) defines resistive heater, the figure of lead-in wire and electrode, the titanium platinum of sputter one deck 0.2 micron thickness then, after removing photoresist, last acetone formed resistive heater, lead-in wire and electrode.
6. make thermal treatment zone support membrane and support the window of releasing of hanging oneself from a beam: the first step, positive photoetching defines the corrosion window graphics that is used to discharge thermal treatment zone support membrane and supports overarm, the silica and the silicon nitride composite membrane that utilize the thorough etching of ion beam etching (Ion-beam) to expose under the protection of photoresist; Second step, utilize deep reaction ion etching (DRIE) etched substrate silicon, etching depth is greater than 0.7 times that supports the overarm width; Just form film after removing photoresist at last and discharge window.
7. the release of thermal treatment zone support membrane and support overarm: utilize the TMAH corrosive liquid to discharge window corrosion substrate silicon, and below central mode district and support overarm, form heat insulation cavity by film.
Embodiment 2:
The structural representation of present embodiment is referring to shown in Fig. 4 (a), and concrete manufacture method is as follows:
1. substrate is selected: 4 inches silicon chips selecting P type (100) face are as substrate, and resistivity 3-8 Ω cm, silicon wafer thickness are 350 ± 10 microns, the angular error of side cut＜1%.
2. make the front etch window be used to form groove structure, definition simultaneously is used to form the silicon oxide layer of resistive heater brace summer: the method for at first utilizing thermal oxidation is 1.0 microns a silicon oxide film at the silicon chip surface layer thickness of growing.Carry out positive photoetching then and make graph window, under the protection of photoresist, utilize the thoroughly silica of etching exposure of reactive ion etching (RIE), form the front etch window, define the shape of the silicon oxide layer that is used to form the resistive heater brace summer simultaneously.
3. make the groove that cross section is " V " font or inverted trapezoidal structure; discharge the silicon oxide layer that is used to form the resistive heater brace summer simultaneously: the corrosion window that utilizes the KOH corrosive liquid to form by step 2 under the protection of silica erodes away reversed-trapezoid shape on silicon chip groove, depth of groove is about 30 microns.
4. make thermal treatment zone support membrane and last resistive heater brace summer: utilizing the method for the thermal oxidation layer thickness of growing earlier is that to utilize the method for low-pressure chemical vapor deposition (LPCVD) to deposit a layer thickness again be 0.6 micron silicon nitride for 0.3 micron silica.
5. make upper and lower resistive heater, lead-in wire and electrode: spray glue photoetching (photoresist thickness is 4 microns) defines resistive heater, the figure of lead-in wire and electrode, the titanium platinum of sputter one deck 0.2 micron thickness then, after removing photoresist, last acetone formed resistive heater, lead-in wire and electrode.
6. make thermal treatment zone support membrane and support the window of releasing of hanging oneself from a beam: positive photoetching defines the corrosion window graphics that is used to discharge thermal treatment zone support membrane and supports overarm; under the protection of photoresist, utilize ion beam etching (Ion-beam) the thoroughly silica and the silicon nitride composite membrane of etching exposure, form film and discharge window.
7. the release of thermal treatment zone support membrane and support overarm: utilize the TMAH corrosive liquid to discharge window corrosion substrate silicon, and below central mode district and support overarm, form heat insulation cavity by film.
Claims (9)
1. three-dimensional micro-heater with helix tube type heating resistor, it is characterized in that: with silicon＜100 crystal orientation becomes the last resistive heater brace summers of-40～+ 40 degree angles to be across cross section and to be on the groove shaped thermal treatment zone support membrane of " V " font or inverted trapezoidal structure, thermal treatment zone support membrane links to each other with substrate framework by supporting to hang oneself from a beam; Be arranged on the resistive heater brace summer last resistive heater be arranged in following resistive heater in the support membrane of the thermal treatment zone and link to each other and form the helix tube type heating resistor that is embedded in the support membrane of the thermal treatment zone and link to each other with electrode on the substrate framework by the lead-in wire that supports on hanging oneself from a beam; Thermal treatment zone support membrane and support overarm below are the heat insulation cavitys that adopts the anisotropic silicon wet etching to form.
2. according to the described three-dimensional micro-heater of claim 1, it is characterized in that resistive heater brace summer and thermal treatment zone support membrane be made up of the composite membrane of silica and silicon nitride, the individual layer thickness is 0.2～1.0 micron, and total number of plies is 2～8 layers, and gross thickness is at 0.4～6.0 micron.
3. according to the described three-dimensional micro-heater of claim 1, it is characterized in that an end that supports overarm links to each other with substrate framework, the other end links to each other with the thermal treatment zone support membrane of groove shaped, and supporting overarm is the center symmetry arrangement with thermal treatment zone support membrane.
4. according to the described three-dimensional micro-heater of claim 1, it is characterized in that lead-in wire is arranged in any two and supports in the overarm, and connect the electrode on helix tube type heating resistor and the substrate framework.
5. according to the described three-dimensional micro-heater of claim 1, the cross section that it is characterized in that heat insulation cavity is " V " font or the trapezoidal structure of falling, be positioned at thermal treatment zone support membrane and support the below of overarm, make thermal treatment zone support membrane and embed wherein helix tube type heating resistor at the support low suspension that supports overarm on substrate silicon.
6. according to claim 1 or 3 described three-dimensional micro-heaters, it is characterized in that described support overarm is two or four.
7. make the method as each described three-dimensional micro-heater among the claim 1-5, only needing it is characterized in that three photolithography plates to realize described three-dimensional micro-heater making, concrete step of making is:
(a) substrate is selected, and substrate only limits to the silicon chip of (100) face;
(b) make the front etch window that is used to form groove structure, definition simultaneously is used to form the silicon oxide layer of resistive heater brace summer, at first on the surface of N type or P type (100) silicon chip, adopt thermal oxidation, the method of low-pressure chemical vapor deposition or plasma reinforced chemical vapour deposition is made one deck silicon oxide film, carry out photoetching making then and go out graph window, the silica that under the protection of photoresist, utilizes reactive ion etching or ion beam etching etching to expose, form the front etch window, definition simultaneously is used to form the shape of the silicon oxide layer of resistive heater brace summer;
(c) make the groove that cross section is " V " font or inverted trapezoidal structure, discharge the silicon oxide layer that is used to form the resistive heater brace summer simultaneously, under the protection of silica, utilize silicon anisotropic etching liquid by the corrosion window that step (b) forms, on silicon chip, erode away the groove that cross section is " V " font or inverted trapezoidal structure;
(d) make thermal treatment zone support membrane and last resistive heater brace summer, the method by thermal oxidation is one deck silica of growing in the groove of " V " font or inverted trapezoidal structure at cross section; Deposition one deck silicon nitride on the silica of the silica of method in groove by low-pressure chemical vapor deposition and last resistive heater brace summer again; Then can be once more method cvd silicon oxide and silicon nitride successively by low-pressure chemical vapor deposition, form multilayer complex films;
(e) make upper and lower resistive heater, lead-in wire and electrode, spray photoresist and photoetching on the multilayer complex films that steps d is made, define resistive heater, the figure of lead-in wire and electrode, sputter one deck titanium platinum then, just formed resistive heater after removing photoresist with acetone at last, lead-in wire and electrode;
(f) make the release window that thermal treatment zone support membrane and support are hung oneself from a beam, can be divided into two classes according to the direction difference that supports overarm: a class is to support the direction and＜100 of overarm〉angle in crystal orientation remains on ± 30 spend in, its manufacture method is: positive photoetching defines the corrosion window graphics that is used to discharge heating film region and supports overarm, the silica and the silicon nitride composite membrane that utilize the thorough etching of reactive ion etching or ion beam etching to expose under the protection of photoresist form film and discharge window; Another kind of is the direction and＜110 that supports overarm〉angle in crystal orientation remains on ± 15 spend in, its manufacture method is: the first step, positive photoetching defines the corrosion window graphics that is used to discharge heating film region and supports overarm, the silica and the silicon nitride composite membrane that under the protection of photoresist, utilize the thorough etching of reactive ion etching or ion beam etching to expose, second step, utilize deep reaction ion etching technology etched substrate silicon, etching depth is greater than 0.7 times that supports the overarm width, just forms film after removing photoresist at last and discharges window;
(g) release of thermal treatment zone support membrane and support overarm utilizes anisotropic etchant to discharge window corrosion substrate silicon by film, and form heat insulation cavity below central mode district and support overarm.
8. according to the manufacture method of the described three-dimensional micro-heater of claim 7, it is characterized in that the corrosive liquid that silicon anisotropic etching adopts is KOH, TMAH, perhaps EPW.
9. according to the described manufacture method of claim 7, it is characterized in that:
1. the described silicon oxide film thickness of step b is the 0.1-3.0 micron;
2. in the steps d at cvd nitride silicon thickness on the silica between 0.2-1.0 μ m;
3. one deck silicon oxide thickness of growing in the groove of V font or inverted trapezoidal structure in the steps d is 0.2-1.0 μ m;
4. the photoresist thickness described in the step e is 1-10 μ m, and the titanium platinum layer thickness of sputter is 0.2-2 μ m;
5. the depth of groove that forms among the step e is between 5-150 μ m.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103922274A (en) * | 2014-04-30 | 2014-07-16 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional infrared light source and manufacturing method thereof |
| CN105873249A (en) * | 2016-05-30 | 2016-08-17 | 京东方科技集团股份有限公司 | Heater, sensor, intelligent terminal and manufacturing method of heater |
| CN113514499A (en) * | 2020-04-10 | 2021-10-19 | 中国石油化工股份有限公司 | Embedded three-dimensional structure micro-heating plate, preparation method and gas sensor |
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| JP2002169003A (en) * | 2000-11-27 | 2002-06-14 | Ind Technol Res Inst | Method for manufacturing micro-spheric and aspheric polymer array structure by excimer laser |
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| CN103922274A (en) * | 2014-04-30 | 2014-07-16 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional infrared light source and manufacturing method thereof |
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| CN105873249A (en) * | 2016-05-30 | 2016-08-17 | 京东方科技集团股份有限公司 | Heater, sensor, intelligent terminal and manufacturing method of heater |
| CN105873249B (en) * | 2016-05-30 | 2022-09-27 | 京东方科技集团股份有限公司 | Heater, sensor, intelligent terminal and manufacturing method of heater |
| CN113514499A (en) * | 2020-04-10 | 2021-10-19 | 中国石油化工股份有限公司 | Embedded three-dimensional structure micro-heating plate, preparation method and gas sensor |
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