CN105870165A - InAlN/GaN HEMT device comprising barrier layer with gradually varied components - Google Patents
InAlN/GaN HEMT device comprising barrier layer with gradually varied components Download PDFInfo
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- CN105870165A CN105870165A CN201610348582.1A CN201610348582A CN105870165A CN 105870165 A CN105870165 A CN 105870165A CN 201610348582 A CN201610348582 A CN 201610348582A CN 105870165 A CN105870165 A CN 105870165A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 238000005036 potential barrier Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910004541 SiN Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 15
- 230000010287 polarization Effects 0.000 abstract description 6
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 2
- 230000037431 insertion Effects 0.000 abstract 1
- 238000003780 insertion Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention disclsoes an InAlN/GaN HEMT device comprising a barrier layer with gradually varied components. The device comprises a GaN nucleating layer, a GaN buffer layer, an AlN insertion layer, the InAlN barrier layer with gradually varied In components, a GaN cap layer, a SiN passivation layer, a grid electrode, a source electrode and a drain electrode sequentially formed on a substrate material, wherein the grid electrode, the source electrode and the drain electrode are formed on the SiN passivation layer. The InAlN/GaN HEMT device is characterized in that the In0.17Al0.83N barrier at the bottom layer and a GaN material form lattice matching, the concentration of two-dimensional electron gas generated due to a polarization effect is increased by increasing the In components layer by layer, and the saturation current and output power of the device are increased. Linear dislocation between heterogenous interfaces is reduced, an inverse piezoelectric effect is inhibited, and the electrical property of the InAlN/GaN HEMT device is effectively improved.
Description
Technical field
The present invention relates to semiconductor power device and manufacture field, particularly relate to the InAlN/GaN of a kind of barrier layer content gradually variational
HEMT device.
Background technology
Compared with conventional narrow bandgap semiconductor, the broad stopband III nitride semiconductor with GaN as representative have high breakdown electric field,
The electrology characteristic that high electron saturation velocities and high thermal stability etc. are superior.Especially piezoelectricity is significant with spontaneous polarization effect
AlGaN/GaN hetero-junctions, can be the core texture of HEMT at the two-dimensional electron gas (2DEG) of interface induction high concentration.
At present, the cut-off frequency of the AlGaN/GaN HEMT reported is more than 100GHz, and peak power output is close to 10W/mm.
But, owing to there is lattice mismatch between AlGaN and GaN bi-material, the substantial amounts of line that can introduce during Material growth
Property dislocation, causes element leakage flow ratio theoretical value much larger.A lot of for AlGaN/GaN HEMT gate reverse leakage current electric current
Research is pointed out, the linear dislocation between heterogeneous interface is the dominant transport passage of its leakage current.In addition, draw because of lattice mismatch
The inverse piezoelectric effect risen is also considered as causing the main cause of the many integrity problems of AlGaN/GaN HEMT.Therefore, reduce
Linear dislocation and suppression even elimination barrier layer inverse piezoelectric effect that heterogeneous interface is formed are particularly significant to improving device performance.
At present, maximally effective a kind of solution is the In of direct growth Lattice Matching therewith on GaN epitaxy sheet0.17Al0.83N
Barrier layer.Although not having piezoelectric polarization effect, its strong spontaneous polarization also is able to induce substantial amounts of 2DEG at heterogeneous interface, it is provided that
Bigger saturation current and output.But, research shows that the change of abarrier layer material component can significantly affect heterogeneous interface and lure
The 2DEG concentration sent out.And the height of 2DEG concentration directly affects saturation current and the height of output forming device.And
Barrier layer In component is fixed as 0.17 by the Lattice Matching structure that component is fixed, and the 2DEG concentration that this component obtains not is the highest.
It is obvious that in order to realize Lattice Matching, component is fixed Lattice Matching structure and is failed to reach in terms of the part electric property of device
Good.
The purpose of the present invention is aiming at the deficiency in prior art, it is provided that the InAlN/GaN of a kind of barrier layer content gradually variational
HEMT device.Realize bottom In0.17Al0.83N potential barrier forms linear dislocation with GaN material Lattice Matching, minimizing heterogeneous interface
While suppression inverse piezoelectric effect, by improving the In component of other layer of potential barrier, strengthen the 2DEG that spontaneous polarization effect produces
Concentration, improves saturation current and the output of device.This device architecture reduces the linear dislocation of heterogeneous interface formation and suppresses inverse
While piezoelectric effect, improve saturation current and the output of device.Not only allow for the reliability of device, promote simultaneously
The electric property of device.
Summary of the invention
The deficiency existed in view of prior art, the purpose of the present invention aims to provide the InAlN/GaN of a kind of barrier layer content gradually variational
HEMT device, this device uses bottom In0.17Al0.83N potential barrier and GaN material realize Lattice Matching, by being gradually increased gesture
Barrier layer In component, increases the 2DEG concentration that polarity effect produces, and improves saturation current and the output of device.
The present invention is achieved through the following technical solutions:
For reaching above-mentioned purpose, the invention provides the InAlN/GaN HEMT device of a kind of barrier layer content gradually variational, mainly wrap
Include the GaN nucleating layer sequentially formed on backing material, GaN cushion, AlN interposed layer, In content gradually variational InAlN barrier layer,
GaN cap, passivation layer and the grid, source electrode and the drain electrode that are formed on it.In this structure, backing material is Si, SiC, blue
Gem or GaN；GaN nucleating layer thickness is 30nm；GaN cushion is involuntary doping, and thickness is 3 μm；AlN inserts
Entering layer thickness is 5nm；InAlN potential barrier is divided into 3-6 layer, every layer thickness to be 2-5nm.Bottom potential barrier In component is 0.17, with
GaN realizes Lattice Matching, and remaining barrier layer In component is gradually increased, and top layer component is not less than 0.32, such as: 0.17, and 0.20,
0.23,0.26,0.29,0.32；GaN cap thickness is 2nm；Passivation layer is SiN, SiO2, or Si3N4, thickness is
150nm；Source electrode and drain electrode use Ti/Al/Ti/Au for metal ohmic contact, and thickness is respectively 30nm, 120nm, 50nm,
100nm；Gate metal uses Ni/Au, and thickness is respectively 50nm, 300nm；
The InAlN/GaN HEMT device of this barrier layer content gradually variational that the present invention provides, bottom In0.17Al0.83N potential barrier with
GaN material realizes Lattice Matching, the linear dislocation that effectively during minimizing Material growth, heterogeneous interface is formed, and inhibits different simultaneously
The inverse piezoelectric effect of matter interface.Under the reliability premise ensureing device, by gradually changing the component of barrier layer In, enter one
Step improves saturation current and the output of device.The present invention is for the preparation of GaN base HEMT device and improves its electricity
Performance has great importance.
Accompanying drawing explanation
Fig. 1 is the Rotating fields schematic diagram of the InAlN/GaN HEMT device of barrier layer content gradually variational of the present invention；
Fig. 2 be barrier layer component fixing the Rotating fields schematic diagram of InAlN/GaN HEMT device；
Fig. 3 is the I of the fixing two kinds of InAlN/GaN HEMT device of barrier layer content gradually variational and componentd-VgCurve；
Fig. 4 is the I of the fixing two kinds of InAlN/GaN HEMT device of barrier layer content gradually variational and componentd-VdCurve.
Detailed description of the invention
With embodiment, technical scheme is further described below in conjunction with the accompanying drawings.
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and referring to the drawings,
The present invention is described in more detail.
The InAlN/GaN HEMT device of this barrier layer content gradually variational that the present invention provides, sequentially forms including on backing material
GaN nucleating layer, GaN cushion, AlN interposed layer, In content gradually variational InAlN barrier layer, GaN cap, passivation layer
And grid, source electrode and the drain electrode formed on it.
The InAlN/GaN HEMT device Rotating fields schematic diagram of barrier layer content gradually variational is as shown in Figure 1.Backing material is Si, SiC,
Sapphire or GaN；GaN nucleating layer thickness is 30nm；GaN cushion is involuntary doping, and thickness is 3 μm；AlN
Interposed layer thickness is 5nm；InAlN potential barrier is divided into 3-6 layer, every layer thickness to be 2-5nm.Bottom potential barrier In component is 0.17,
Realizing Lattice Matching with GaN, remaining barrier layer In component is gradually increased, and top layer component is not less than 0.32, such as: 0.17,
0.20,0.23,0.26,0.29,0.32；GaN cap thickness is 2nm；Passivation layer is SiN, SiO2, or Si3N4, thick
Degree is 150nm；Source electrode and drain electrode use Ti/Al/Ti/Au for metal ohmic contact, and thickness is respectively 30nm, 120nm, 50nm,
100nm；Gate metal uses Ni/Au, and thickness is respectively 50nm, 300nm；The InAlN/GaN that barrier layer component is fixing
HEMT device Rotating fields schematic diagram is as in figure 2 it is shown, its barrier layer In component is fixed, and thickness is 30nm.Preparation process is for adopting
On backing material, GaN nucleating layer is progressively grown by metal-organic chemical vapor deposition equipment method, GaN cushion, AlN interposed layer,
In content gradually variational InAlN barrier layer, GaN cap, define electrode structure by photoetching process and electron beam evaporation process, finally
Growth of passivation layer reduces the horizontal leakage current in surface.It should be noted that the change of the In component of barrier layer and thickness is to 2DEG
Concentration tool have a certain impact.Along with barrier layer In component and thickness increase, the 2DEG concentration of polarity effect induction is the most continuous
Increase.But, if component is excessive, then can cause barrier layer strain relaxation, make the material behavior of hetero-junctions deteriorate.Therefore, originally
The component of invention barrier layer and thickness need to control respectively in the range of less than 0.32 with less than 30nm.In addition, barrier layer
Component and THICKNESS CONTROL are obtained in that higher 2DEG mobility value.This is owing to can draw when barrier layer component and thickness increase
Play the increase of 2DEG density, distribution narrow and cause various scattering process to change closer to heterogeneous interface, can reduce on the contrary
2DEG concentration.Under similarity condition, compared to the InAlN/GaN HEMT device that component is fixing, the barrier layer that the present invention proposes
Content gradually variational InAlN/GaN HEMT has bigger saturation current, its output higher (as shown in Figures 3 and 4).
The present invention uses bottom In0.17Al0.83N potential barrier and GaN material realize Lattice Matching, by being gradually increased barrier layer In group
Point, strengthen the 2DEG concentration of the spontaneous polarization effect induction of heterogeneous interface, improve saturation current and output, it is achieved
Lifting to InAlN/GaN HEMT electric property.Thus, this structure contribute to GaN base power device preparation and
The lifting of electric property.For AlGaN/GaN HEMT device, the linear dislocation of heterogeneous interface that lattice mismatch causes and inverse piezoelectricity
Effect is to reliability when having a strong impact on its work.And achieve the In of Lattice Matching0.17Al0.83N/GaN HEMT, due to In
Component is fixed on 0.17, and its electric property also has the space promoted further.The present invention is by using bottom In0.17Al0.83N gesture
Build and realize Lattice Matching, by being gradually increased barrier layer In component with GaN material, it is achieved that to InAlN/GaN HEMT electricity
Learn the further lifting of performance.Meanwhile, control every layer of In change of component less, reduce the linear dislocation formed between barrier layer and
Suppression inverse piezoelectric effect, by controlling barrier layer In component and barrier layer thickness respectively, it is thus achieved that optimal electric property.Compared to
Prior art, there is advantages that under the reliability premise ensureing device, by gradually changing barrier layer In
Component, further increase saturation current and the output of device.
Finally illustrating, above example is only in order to illustrate technical scheme and unrestricted, although with reference to preferably implementing
The present invention has been described in detail by example, it will be understood by those within the art that, can enter technical scheme
Row amendment or equivalent, without deviating from objective and the scope of technical solution of the present invention, it all should contain the right in the present invention
In the middle of claimed range.
Claims (5)
1. the InAlN/GaN HEMT device of a barrier layer content gradually variational, it is characterised in that: this device includes backing material
On the GaN nucleating layer that sequentially forms, GaN cushion, AlN interposed layer, In content gradually variational InAlN barrier layer, GaN cap
Layer, passivation layer and the grid, source electrode and the drain electrode that are formed on it.
The InAlN/GaN HEMT device of barrier layer content gradually variational the most according to claim 1, it is characterised in that institute
Stating backing material is Si, SiC, sapphire or GaN.
The InAlN/GaN HEMT device of barrier layer content gradually variational the most according to claim 1, it is characterised in that InAlN
Potential barrier is divided into 3-6 layer, every layer thickness to be 2-5nm, and gross thickness is in the range of 18nm-30nm.
The InAlN/GaN HEMT device of barrier layer content gradually variational the most according to claim 1, it is characterised in that the end
Layer potential barrier In component is 0.17, it is achieved with the Lattice Matching of GaN, remaining barrier layer In component is gradually increased, and top layer component is not
Less than 0.32, such as: 0.17,0.20,0.23,0.26,0.29,0.32.
The InAlN/GaN HEMT device of barrier layer content gradually variational the most according to claim 1, it is characterised in that institute
Stating passivation layer is SiN, SiO2, or Si3N4。
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123668A (en) * | 2017-04-12 | 2017-09-01 | 西安电子科技大学 | A kind of InAs/AlSb HEMT epitaxial structures and preparation method thereof |
| CN111755510A (en) * | 2019-03-26 | 2020-10-09 | 苏州捷芯威半导体有限公司 | Semiconductor device and preparation method thereof |
| CN113053748A (en) * | 2021-03-12 | 2021-06-29 | 浙江大学 | GaN device and preparation method |
| CN115394842A (en) * | 2022-05-16 | 2022-11-25 | 山东大学 | InAlN/GaN HEMT with high power gain cut-off frequency and preparation method thereof |
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| CN205666237U (en) * | 2016-05-24 | 2016-10-26 | 江南大学 | InAlNGaN HEMT device of barrier layer component gradual change |
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| CN111755510A (en) * | 2019-03-26 | 2020-10-09 | 苏州捷芯威半导体有限公司 | Semiconductor device and preparation method thereof |
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| CN113053748A (en) * | 2021-03-12 | 2021-06-29 | 浙江大学 | GaN device and preparation method |
| CN115394842A (en) * | 2022-05-16 | 2022-11-25 | 山东大学 | InAlN/GaN HEMT with high power gain cut-off frequency and preparation method thereof |
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Application publication date: 20160817 |
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| RJ01 | Rejection of invention patent application after publication |