CN105866815B - A kind of FBAR gamma irradiation sensor of flexible structure - Google Patents
A kind of FBAR gamma irradiation sensor of flexible structure Download PDFInfo
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- CN105866815B CN105866815B CN201610298333.6A CN201610298333A CN105866815B CN 105866815 B CN105866815 B CN 105866815B CN 201610298333 A CN201610298333 A CN 201610298333A CN 105866815 B CN105866815 B CN 105866815B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
Abstract
The invention discloses a kind of FBAR gamma irradiation sensors of flexible structure, including sound wave reflecting layer, detecting element FBAR, radiation sensitive layer and reading circuit；Sound wave reflecting layer includes flexible substrate, the sound wave barrier layer being deposited on substrate；Detecting element FBAR includes hearth electrode, piezoelectric layer, top electrode, is provided with radiation sensitive layer；The top electrode uses the CNT flexibility carbon fibre material of good, high conductivity, low-density with resistance to gamma irradiation performance, may make the present invention longer than the sensor life-time of traditional metal electrodes, has higher measurement sensitivity and flexible；The gamma irradiation sensor made using flexible material as flexible substrate adapts to more complicated out-of-flatness surface condition, while can arbitrarily be arranged according to measuring condition, expands application range of the invention；Since preparation process is simple, integrated machinery fastness is strong, structure size is smaller, further reduced production cost and development cycle.
Description
Technical field
The invention belongs to mems device fields, and in particular to a kind of FBAR gamma irradiation biography of flexible structure
Sensor.
Technical background
Ionizing radiation sensing has a large amount of application, and in large-scale high-energy physics experiment, high dosage irradiation test is to understand silicon
The important means that base electron device is degenerated.In nuclear material detection and security application, since irradiation bomb may be partially obscured, need
Want the sensor of low dosage.In astronomy field, need to measure flux and the direction of high-energy irradiation.In the radioactivity for the treatment of cancer
In therapy, it is thus necessary to determine that irradiate incident exact position and size.Currently, detection of the existing multiple sensors for irradiation.
Thin film bulk acoustic wave resonator (FBAR, thin-film bulk acoustic wave resonators) is a kind of
The novel sensor of the detectable irradiation of preparation on a silicon substrate has the characteristics that highly sensitive, high working frequency, low-power consumption.
Working principle using FBAR sensor measurement gamma irradiation dosage is: irradiation makes the capacity plate antenna (C of FBAR0) increase, thus
Reduce the resonance frequency of FBAR；Utilize radio circuit appropriate or the resonance frequency shift of vector network analyzer measurement FBAR
Realize the detection of irradiation dose.
In existing FBAR gamma irradiation sensor, FBAR gamma irradiation sensor is prepared using silicon substrate mostly.Silicon lining
The hard crisp property in bottom makes FBAR device be difficult to be bent or be extended, and thoroughly damages once there is moderate finite deformation to will lead to device, nothing
Method carries out irradiation detection.With the development of flexible material, on flexible substrates, on high molecular polymer or amorphous carbon material
The FBAR piezoelectric vibration heap of preparation have it is flexible, extend, can free bend the characteristics of, adapt to more complicated out-of-flatness table
Noodles part, therefore expand the application range of sensor.Publication date is on August 12nd, 2015, Publication No. CN104833996A
Chinese invention patent application document, disclose " the array gamma irradiation dosimeter of FBAR structure on a kind of diaphragm ", be one
The gamma irradiation sensor of kind silicon substrate through-hole type FBAR structure.It is curved that the major defect of the device is that FBAR sensor is unable to measure
The irradiation dose value of curved surface.Simultaneously because the process complexity that FBAR leads to pass structure is larger, the mechanical fastness of device is poor, system
It is higher to make cost.
In existing FBAR gamma irradiation sensor, the gamma irradiation sensor of metal electrode preparation is used mostly.
Compared to CNT electrode material, metal electrode is not ideal radiotolerant electrode material.Use CNT(Carbon nanotube)
Material does electrode material, and the FBAR gamma irradiation sensor of preparation has following advantage: 1. have longer service life.
CNT is radiotolerant material, using the function admirable of the FBAR sensor of CNT material preparation, extends the use of FBAR device
Service life.2. having smaller ohmic loss.CNT is the material of high conductivity, when doing electrode using CNT, the Ohmic electrode of introducing
Loss is smaller, so that the Q value of FBAR device is higher, therefore FBAR has higher sensitivity.3. having flexibility and ductility.
CNT is the carbon fibre material with good flexibility and ductility, therefore the FBAR device prepared can apply to curved surface, is expanded
The big use scope of sensor.
2006, the document " Radiation that H.Woongki et al. is reported in " nanotechnology " meeting in 2006
hardness of the electrical properties of carbon nanotube network field effect
Transistors under high-energy proton irradiation " points out that CNT based fet is 10 ~ 35MeV's
Device performance is still good under the proton irradiation (heavy particle, proton, α particle etc. belong to high energy particle) of high dose, and J.
The document that Oiler et al. is reported in the 16th " International Solid sensor, actuator and micro-system " meeting June in 2011
“The Sensitivity Enhancement for the Radiation Sensor Based on Film Bulk
It is pointed out in Acoustic-Wave Resonator ", a kind of gamma irradiation sensor of metal electrode, is 2.5Mev's in energy
Under gamma-ray irradiation, as irradiation dose increases (100 Krad-200 Krad), the sensitivity of device declines (0.7 kHz/
Krad -0.6 kHz/krad).It can be seen that metal electrode material compared to CNT electrode material from above-mentioned document, prepare FBAR
Be not ideal radiation resistance material when sensor, for irradiation dose measurement when, the FBAR device itself of metal electrode it is old
Change can introduce a part of measurement error.
In short, in order to realize higher measurement accuracy, the service life for improving device, make device for a variety of measurement fields
It closes, needs to study a kind of FBAR gamma irradiation sensor of flexible structure, overcome the problems, such as of the existing technology.
Summary of the invention
In order to solve the problems existing in the prior art, the present invention provides a kind of FBAR gamma irradiation of flexible structure sensings
Device, the sensor with highly sensitive (FBAR sensor has high q-factor), long service life (Radiation resistance characteristic of CNT material),
The features such as flexible (CNT is carbon fibre material flexible), it is expected to it is curved according to detecting, minimizing, measuring to meet high precision radiation
The demand of curved surface, the irradiation dose detection that can be used for high dose use.
To achieve the above object, the present invention takes following technical scheme:
A kind of FBAR gamma irradiation sensor of flexible structure, it is characterised in that: including sound wave reflecting layer, detecting element
FBAR and reading circuit；The detecting element FBAR is set on sound wave reflecting layer, and detecting element FBAR is reflected across sound wave
Layer connection reading circuit；
The detecting element FBAR includes the hearth electrode, piezoelectric layer, top electrode being sequentially depositing from bottom to top, the detection member
Radiation sensitive layer is additionally provided in part FBAR, the top electrode uses carbon nanotube (Carbon Tube；CNT) material.
Specific structure and connection relationship for sound wave reflecting layer further limit are as follows:
The sound wave reflecting layer includes flexible substrate, the sound wave barrier layer of deposition on flexible substrates；The sound wave stops
Layer is used to for sound wave being limited between hearth electrode-piezoelectric layer-radiation sensitive layer-top electrode or hearth electrode-radiation sensitive layer-
Between piezoelectric layer-top electrode.
The specific structure and connection relationship of detecting element FBAR are further defined in that
The detecting element FBAR further includes that a pair of of pad and one longitudinally run through the intercommunicated of setting for sound wave reflecting layer
Full conducting medium is filled in hole, in through-hole interconnection, the top of through-hole interconnection is connect with top electrode, hearth electrode respectively, through-hole interconnection
Bottom be all connected with pad.
The through-hole interconnection can be divided into top electrode through-hole and hearth electrode through-hole, and top electrode through-hole and hearth electrode through-hole are corresponding
The pad of connection is top electrode pad and hearth electrode pad.
The radiation sensitive layer can be deposited between piezoelectric layer and top electrode, and specific structure is as follows:
The hearth electrode abutting is deposited on sound wave reflecting layer, and is connect with the conducting medium of hearth electrode through-hole upper surface；
The piezoelectric layer is close to be deposited on the entire upper surface of hearth electrode；The radiation sensitive layer is deposited on the entire upper surface of piezoelectric layer
And it to the side of direction extension cladding hearth electrode, piezoelectric layer far from hearth electrode through-hole and is covered on sound wave reflecting layer；It is described
Top electrode is connect with the conducting medium of top electrode through-hole upper surface, and is close to be deposited on the side of radiation sensitive layer and is extended to spoke
According in a part of the upper surface of sensitive layer；The radiation sensitive layer is exposed portion close to the upper surface of hearth electrode through-hole, not
It is covered by top electrode.
Alternatively, the radiation sensitive layer can be deposited between piezoelectric layer and hearth electrode, specific structure is as follows:
The hearth electrode abutting is deposited on sound wave reflecting layer, and is connect with the conducting medium of hearth electrode through-hole upper surface；
The radiation sensitive layer is close to be deposited on the entire upper surface of hearth electrode；The piezoelectric layer be deposited on radiation sensitive layer it is entire on
Surface and to far from hearth electrode through-hole direction extend cladding hearth electrode, radiation sensitive layer side and be covered in sound wave reflecting layer
On；The top electrode is connect with the conducting medium of top electrode through-hole upper surface, and is close to be deposited on side and the extension of piezoelectric layer
To a part of the upper surface of piezoelectric layer.There are two types of schemes for the reading circuit:
The first scheme is the reading circuit based on six-port reflectometer, and the program is again there are two types of different subschemes, one
Kind is the 1 port connecting signal source in six-port reflectometer, and 2 ports connect device under test；Another kind is in six-port reflectometer
1 port connect a standard termination, 2 ports connect a Pierce oscillator based on FBAR.
Second scheme use the reading circuit based on Pierce oscillator, according to FBAR series and parallel resonance frequency it
Between present perception feature, by itself and two capacitor C1, C2The basic reactance component of composition Pierce oscillator is constituted, is met
The oscillating condition that the total reactance in circuit is zero, four resistance R1, R2, Re, RcFor oscillator triode work is provided needed for direct current
Biasing, L1Prevent high-frequency signal interference power, L2Prevent high-frequency signal to ground, CbThe effect of coupled capacitor is by feedback signal coupling
The input terminal of oscillator is closed, external circuits are isolated in the effect of buffer, prevent external circuits from causing to do to oscillator
It disturbs, influences the starting condition for oscillation and frequency stability of oscillator.The frequency for the number GHz signal that sensor exports is reduced to by frequency divider
Meet the frequency range of Digital Signal Processing, ADC converts analog signals into digital signal, to carry out Digital Signal Processing.
Detecting element FBAR between piezoelectric layer and top electrode is deposited on for radiation sensitive layer, preparation method include with
Lower step:
Step 1: substrate is prepared；
Step 2: sound wave barrier layer is prepared on substrate；
Step 3: hearth electrode through-hole is prepared on sound wave barrier layer and fills conducting medium；
Step 4: hearth electrode is prepared on sound wave barrier layer；
Step 5: piezoelectric layer is prepared on hearth electrode；
Step 6: radiation sensitive layer is prepared over the piezoelectric layer；
Step 7: top electrode is prepared on radiation sensitive layer；
Step 8: pad is prepared in the lower surface of substrate.
Detecting element FBAR between piezoelectric layer and hearth electrode is deposited on for radiation sensitive layer, preparation method include with
Lower step:
Step 1: preparing substrate；
Step 2: and sound wave barrier layer is prepared on substrate；
Step 3: preparing hearth electrode through-hole on sound wave barrier layer and fill inter metal dielectric；
Step 4: preparing hearth electrode on sound wave barrier layer；
Step 5: radiation sensitive layer is prepared on hearth electrode；
Step 6: preparing piezoelectric layer on radiation sensitive layer；
Step 7: preparing top electrode over the piezoelectric layer；
Step 8: preparing pad in the lower surface of substrate.
In the preparation method of above two detecting element FBAR, material used in the substrate is metal foil or high score
Sub- polymer etc. is the flexible material for having certain ductility and bendability, can with to be illuminated device conformal, measurement bending table
The gamma irradiation variable of noodles part improves measurement accuracy.
In the preparation method of above two detecting element FBAR, the sound wave barrier material be amorphous carbon material or
High molecular polymer etc. has the material of low acoustic impedance.
In the preparation method of above two detecting element FBAR, the hearth electrode use electron beam evaporation deposition method
Preparation, the hearth electrode material are Au, Cu, Al, Mo, Pt, the metal materials such as Ti.
In the preparation method of above two detecting element FBAR, the piezoelectric layer is deposited using direct current reaction magnetron sputtering
Method preparation, the piezoelectricity layer material be ZnO or AlN.
In the preparation method of above two detecting element FBAR, the material of shown radiation sensitive layer is SiO2Or SiN,
It is prepared using the method for PECVD plasma activated chemical vapour deposition；The SiO2Layer or SiN layer make radiation sensitive layer again
Make temperature compensating layer, the SiO with positive temperature compensation coefficient2Or the FBAR piezoelectricity layer material of SiN material and negative temperature coefficient
It is compound, the temperature stability of FBAR can be improved.When gamma irradiation enters to shine on radiation sensitive layer and piezoelectric layer, electronics-sky is generated
Ionization damage is caused to (EHPs, electron-hole pairs) in cave, generates electron-hole pair.Electron-hole pair generates
Afterwards, sub-fraction electrons and holes will soon be compound.Since electronics has higher mobility, can be obtained more than hole-recombination
Fastly, cause extra hole migration into the deep hole trap of radiation sensitive layer or radiation sensitive layer/piezoelectric layer interface.Herein,
The charge of capture is accumulated, and the surface potential of piezoelectric layer or radiation sensitive layer is changed, so that capacity plate antenna (C0) increase, from
And the resonance frequency of FBAR is reduced, using the offset of the reading circuit measurement FBAR resonance frequency, spoke can be calculated
According to dosage.
In the preparation method of above two detecting element FBAR, the top electrode using plasma chemical vapor deposition
(PECVD) method preparation；The top electrode material is the CNT of single wall or multi wall structure.CNT material has the spoke of resistance to gamma
According to performance good, low-density, high conductivity, have the characteristics that the carbon fibre material of bendability.
Using CNT(Carbon nanotube) material does electrode material, and the FBAR gamma irradiation sensor of preparation has following
Several advantages: 1. have longer service life.CNT is radiotolerant material, the FBAR sensors prepared using CNT material
Can be excellent, extend the service life of FBAR device.2. having smaller ohmic loss.CNT is the material of high conductivity, is used
When CNT does electrode, the Ohmic electrode loss of introducing is smaller, so that the Q value of FBAR device is higher, therefore FBAR sensor is sensitive
Du Genggao.3. having flexibility and ductility.CNT is the carbon fibre material with good flexibility and ductility, therefore is prepared
FBAR device can apply to curved surface, expand the use scope of sensor.
The substrate material is the flexible material of low acoustic impedance, the bulk acoustic wave in interface effective attenuation piezoelectric vibration heap
Spread speed improves the Q value of device, therefore improves the sensitivity of measurement.
In the preparation method of above two detecting element FBAR, shown through-hole interconnection is manufactured using vertical through hole technology,
The through-hole interconnection is provided with conducting medium, and conducting medium can be metal, conducting polymer.
Beneficial effects of the present invention are as follows:
1, the present invention uses CNT material that gamma irradiation sensor can be improved as the top electrode of detecting element FBAR
Service life improves the sensitivity of FBAR, keeps device bend extending；
2, the present invention uses flexible substrate material, not only light, ultra-thin, flexible, but also flexibility is good, can be used for complexity
Measuring condition；
3, sound wave can be limited in top electrode-piezoelectricity well using the sound wave barrier material of low acoustic impedance by the present invention
Between layer-hearth electrode, reduce the loss of acoustic wave energy, improve the Q value of FBAR device, enhances device sensitivity；Sound wave resistance simultaneously
Barrier material can be with device conformal deposited on three-dimensional structure surface；
4, the preparation method of the gamma irradiation sensor of flexible structure provided by the invention is in substrate surface Direct precipitation
Detecting element FBAR, compared to through-hole type is formed, the technique of cavity type or Bragg reflecting layer structure greatly simplifies gal
The process flow of horse irradiation sensor, shortens fabrication cycle, reduces production cost.
Detailed description of the invention
Fig. 1 is the cross-sectional view of the structure in embodiment 1；
Fig. 2-8 is the manufacturing process steps schematic diagram for making embodiment 1；
Fig. 9 is the cross-sectional view of the structure in embodiment 2；
Figure 10-11 is respectively the schematic diagram of two kinds of reading circuits of the invention.
In figure, appended drawing reference are as follows: 1- sound wave reflecting layer, 2- through-hole interconnection, 3- hearth electrode, 4- piezoelectric layer, 5- radiation sensitive
Layer, 6- top electrode, 7- pad.
Specific embodiment
Embodiment 1
As shown in Figure 1, a kind of FBAR gamma irradiation sensor of flexible structure, including sound wave reflecting layer 1, detecting element
FBAR and reading circuit；The detecting element FBAR is set on sound wave reflecting layer 1, and detecting element FBAR is reflected across sound wave
Layer 1 connects reading circuit.
The sound wave reflecting layer 1 includes flexible substrate, the sound wave barrier layer of deposition on flexible substrates；Material used in substrate
The flexible material for having certain ductility and bendability for person's high molecular polymer, can with to be illuminated device conformal, measurement
The gamma irradiation variable of complex surface condition improves measurement accuracy.
The detecting element FBAR includes the hearth electrode 3, piezoelectric layer 4, top electrode 6 being sequentially depositing from bottom to top, the inspection
It surveys in element FBAR and is additionally provided with radiation sensitive layer 5, the top electrode 6 uses CNT material.The detecting element FBAR is also wrapped
Include longitudinal for sound wave reflecting layer 1 in the through-hole interconnection 2 of setting, the full conduction of filling in through-hole interconnection 2 of a pair of of pad 7 and one
Medium, the bottom of through-hole interconnection 2 are all connected with pad 7, and the top of through-hole interconnection 2 is connect with top electrode 6, hearth electrode 3 respectively.
The radiation sensitive layer 5, is preferably disposed between top electrode 6 and piezoelectric layer 4；Preferably, 3 material of hearth electrode is
Au；Preferred 4 material of piezoelectric layer is ZnO；6 material of top electrode is single wall CNT；The conducting medium filled in through-hole interconnection 2, preferably
Conducting medium be Al.
Preparation method of the invention the following steps are included:
Step 1: preparing substrate, and prepare sound wave barrier layer on substrate；
Step 2: preparing the through-hole interconnection 2 of hearth electrode 3 on sound wave barrier layer and fill inter metal dielectric；
Step 3: hearth electrode 3 is prepared on sound wave barrier layer；
Step 4: piezoelectric layer 4 is prepared on hearth electrode 3；
Step 5: radiation sensitive layer 5 is prepared on piezoelectric layer 4；
Step 6: top electrode 6 is prepared on radiation sensitive layer 5；
Step 7: preparing pad 7 in the lower surface of substrate.
Specifically as illustrated in figs. 2 through 8:
In Fig. 2, by spin coating method spin-on polyimide, then baking-curing forms substrate harmony wave resistance barrier；
In Fig. 3, through-hole interconnection 2 is manufactured by vertical through hole technology (TSV, Through-Silicon-Via), passes through electricity
Depositing process fills metal in through-hole interconnection 2；
In Fig. 4, hearth electrode 3 is formed on sound wave barrier layer by thermal evaporation deposition and ultrasonic stripping technology；
In Fig. 5, is deposited by low-temp reaction magnetron sputtering and TMAH solution corrosion in 3 upper surface of hearth electrode and graphically pressed
Electric layer 4；
In Fig. 6, radiation sensitive layer 5 is formed in 4 upper surface of piezoelectric layer by PECVD deposition and RIE etching；
In Fig. 7, simultaneously graphical top electrode 6 is deposited on radiation sensitive layer 5 by thermal evaporation deposition and ultrasonic stripping technology；
In Fig. 8, is deposited in the lower surface of substrate and graphically form pad 7.
In implementation process, when the material of the substrate be high molecular polymer when, preferably use PI material i.e. as
Substrate is used as sound wave barrier layer again.In order to guarantee the high-performance of FBAR, need to be limited in sound wave in FBAR three-decker.Root
According to transmission line theory, when load is zero or is infinitely great, incidence wave will be totally reflected.PI layers of acoustic impedance, can be fine close to zero
Reflected acoustic wave, however, to ensure that sound wave is fully reflective, PI layers of thickness must be at 9 μm or more.
In the present embodiment, as shown in Figure 10, the reading circuit is the reading circuit structure based on Pierce oscillator；Or
Person, as shown in figure 11, the reading circuit are the reading circuit structure based on six-port reflectometer, wherein 1 port connection signal
Source, 2 ports connect device under test FBAR.
Embodiment 2
As shown in figure 9, FBAR gamma irradiation sensor and embodiment 1 difference of a kind of flexible structure are: the irradiation
Sensitive layer 5 is placed between hearth electrode 3 and piezoelectric layer 4.
Corresponding preparation method the following steps are included:
Step 1: preparing substrate；
Step 2: preparing sound wave barrier layer on substrate；
Step 3: preparing the through-hole interconnection 2 of hearth electrode 3 on sound wave barrier layer and fill inter metal dielectric；
Step 4: hearth electrode 3 is prepared on sound wave barrier layer；
Step 5: radiation sensitive layer 5 is prepared on hearth electrode 3；
Step 6: piezoelectric layer 4 is prepared on radiation sensitive layer 5；
Step 7: top electrode 6 is prepared on piezoelectric layer 4；
Step 8: preparing pad 7 in the lower surface of substrate.
Detailed process are as follows:
Firstly, then baking-curing forms substrate harmony wave resistance barrier by spin coating method spin-on polyimide；
Through-hole interconnection 2 is manufactured by vertical through hole technology (TSV, Through-Silicon-Via), is existed by electroplating technology
Metal is filled in through-hole interconnection 2；
Hearth electrode 3 is formed on sound wave barrier layer by thermal evaporation deposition and ultrasonic stripping technology；
Radiation sensitive layer 5 is formed in 3 upper surface of hearth electrode by PECVD deposition and RIE etching；
By low-temp reaction magnetron sputtering and TMAH solution corrosion in 5 upper surface of radiation sensitive layer deposition and graphical piezoelectricity
Layer 4；
Simultaneously graphical top electrode 6 is deposited on piezoelectric layer 4 by thermal evaporation deposition and ultrasonic stripping technology；
It is deposited in the lower surface of substrate and graphically forms pad 7.
In the present embodiment, equally, the reading circuit can distinguish the reading as shown in Figure 10 based on Pierce oscillator
Circuit structure, or using the reading circuit structure based on six-port reflectometer as shown in figure 11, wherein 1 port connection signal
Source, 2 ports connect device under test FBAR.
Claims (7)
1. a kind of FBAR gamma irradiation sensor of flexible structure, it is characterised in that: including sound wave reflecting layer, detecting element FBAR
And reading circuit；The detecting element FBAR is set on sound wave reflecting layer (1), and detecting element FBAR passes through sound wave reflecting layer
(1) reading circuit is connected；The sound wave reflecting layer (1) includes the sound wave barrier layer of flexible substrate and deposition on flexible substrates；
The detecting element FBAR includes the hearth electrode (3), piezoelectric layer (4), top electrode (6) being sequentially depositing from bottom to top, the detection
It is additionally provided in element FBAR radiation sensitive layer (5), the top electrode (6) uses carbon nano-tube material；The reading circuit is
Reading circuit based on six-port reflectometer, a port of the six-port reflectometer connect standard termination, and another port connects
Connect the Pierce oscillator based on FBAR；Or, the reading circuit is the reading circuit based on Pierce oscillator.
2. a kind of FBAR gamma irradiation sensor of flexible structure according to claim 1, it is characterised in that: the detection
Element FBAR further includes that a pair of of pad (7) and one are longitudinally interior through the through-hole interconnection (2) of setting for sound wave reflecting layer (1), mutually
Full conducting medium is filled in intercommunicating pore (2), the bottom of through-hole interconnection (2) is all connected with pad (7), the top part of through-hole interconnection (2)
It is not connect with top electrode (6), hearth electrode (3)；The through-hole interconnection (2) is divided into top electrode through-hole and hearth electrode through-hole, top electrode
The pad (7) that through-hole and hearth electrode through-hole are correspondingly connected with is top electrode pad and hearth electrode pad.
3. a kind of FBAR gamma irradiation sensor of flexible structure according to claim 2, it is characterised in that: the irradiation
Sensitive layer (5) is deposited between piezoelectric layer (4) and top electrode (6), specific structure are as follows: the hearth electrode (3) is close to be deposited on sound
On wave reflection layer (1), and it is connect with the conducting medium of hearth electrode through-hole upper surface；The piezoelectric layer (4) is close to be deposited on bottom electricity
The entire upper surface of pole (3)；The radiation sensitive layer (5) is deposited on the entire upper surface of piezoelectric layer (4) and to far from hearth electrode
The direction of through-hole extend cladding hearth electrode (3), piezoelectric layer (4) side and be covered on sound wave reflecting layer (1)；The top electrode
(6) it is connect with the conducting medium of top electrode through-hole upper surface, and is close to be deposited on the side of radiation sensitive layer (5) and extends to spoke
According in a part of the upper surface of sensitive layer (5).
4. a kind of FBAR gamma irradiation sensor of flexible structure according to claim 2, it is characterised in that: the irradiation
Sensitive layer (5) is deposited between piezoelectric layer (4) and hearth electrode (3), specific structure are as follows: the hearth electrode (3) is close to be deposited on sound
On wave reflection layer (1), and it is connect with the conducting medium of hearth electrode through-hole upper surface；The radiation sensitive layer (5) is close to be deposited on
The entire upper surface of hearth electrode (3)；The piezoelectric layer (4) is deposited on the entire upper surface of radiation sensitive layer (5) and to the bottom of far from
The direction of electrode through-hole extend cladding hearth electrode (3), radiation sensitive layer (5) side and be covered on sound wave reflecting layer (1)；Institute
It states top electrode (6) to connect with the conducting medium of top electrode through-hole upper surface, and is close to be deposited on side and the extension of piezoelectric layer (4)
To a part of the upper surface of piezoelectric layer (4).
5. the method for preparing the FBAR gamma irradiation sensor of flexible structure described in claim 3, it is characterised in that including following
Step:
Step 1: substrate is prepared；
Step 2: sound wave barrier layer is prepared on substrate；
Step 3: hearth electrode through-hole is prepared on sound wave barrier layer and fills conducting medium；
Step 4: hearth electrode (3) are prepared on sound wave barrier layer；
Step 5: piezoelectric layer (4) are prepared on hearth electrode (3)；
Step 6: radiation sensitive layer (5) are prepared on piezoelectric layer (4)；
Step 7: top electrode (6) are prepared on radiation sensitive layer (5)；
Step 8: pad (7) are prepared in the lower surface of substrate.
6. the method for preparing the FBAR gamma irradiation sensor of flexible structure described in claim 4, it is characterised in that including following
Step:
Step 1: preparing substrate；
Step 2: and sound wave barrier layer is prepared on substrate；
Step 3: preparing hearth electrode through-hole on sound wave barrier layer and fill inter metal dielectric；
Step 4: hearth electrode (3) are prepared on sound wave barrier layer；
Step 5: radiation sensitive layer (5) are prepared on hearth electrode (3)；
Step 6: piezoelectric layer (4) are prepared on radiation sensitive layer (5)；
Step 7: top electrode (6) are prepared on piezoelectric layer (4)；
Step 8: preparing pad (7) in the lower surface of substrate.
7. a kind of FBAR gamma irradiation sensor of flexible structure according to any one of claims 1-4, feature exist
In: the flexible substrate uses metal foil or high molecular polymer；The sound wave barrier layer using amorphous carbon material or
High molecular polymer；The hearth electrode (3) uses Au or Cu or Al or Mo or Pt or Ti；The piezoelectric layer (4) uses
ZnO or AlN；The material of the radiation sensitive layer (5) is SiO2Or SiN；The conducting medium is that metal or conduction are poly-
Close object.
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| CN205665407U (en) * | 2016-05-06 | 2016-10-26 | 中国工程物理研究院电子工程研究所 | Flexible construction's FBAR gamma irradiation sensor |
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| JP2005057707A (en) * | 2003-08-07 | 2005-03-03 | Sony Corp | Thin film bulk acoustic resonator and micro electromechanical system device |
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