CN104833996B - The array gamma irradiation dosimeter of FBAR structures on diaphragm - Google Patents
The array gamma irradiation dosimeter of FBAR structures on diaphragm Download PDFInfo
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Abstract
The invention discloses the array gamma irradiation dosimeter of FBAR structures on diaphragm, it is characterised in that：Including detecting element, laminated film and Si pedestals, detecting element is located above laminated film, and laminated film is used to support detecting element, and Si pedestals are located at below laminated film；Detecting element includes the FBAR that some rectangular array formulas are distributed in above laminated film, FBAR includes hearth electrode, piezoelectric layer and top electrode successively from down to up, radiation sensitive layer is arranged between piezoelectric layer and hearth electrode or is arranged between piezoelectric layer and top electrode, and hearth electrode is close to laminated film upper surface；Si pedestals are provided with some cavitys, and position of the cavity with radiation sensitive layer in the vertical corresponds, and cavity is used to form bulk acoustic wave reflecting interface, and corresponding laminated film region is the hanging region of laminated film above cavity；The present invention has the advantages that small size, high sensitivity, detectable irradiation dose is distributed, temperature stability is good and manufacturability is good.
Description
Technical field
The invention belongs to mems device field, and in particular to (film bulk acoustic is humorous by FBAR on a kind of diaphragm
Shake device, film bulk acoustic-wave resonators) array gamma irradiation dosimeter, the array gamma spoke
It is excellent to have that small size, high sensitivity, the distribution of detectable irradiation dose, temperature stability are good and manufacturability is good etc. according to dosimeter
Point.
Technical background
Ionizing radiation sensing has substantial amounts of application, and in large-scale high-energy physics experiment, high dosage irradiation test is to understand silicon
The important means that base electron device is degenerated.In nuclear material detection and security application, because irradiation bomb may be partially obscured, need
Want the sensor of low dosage.In astronomy field, it is necessary to measure flux and the direction of high-energy irradiation.In the radioactivity for the treatment of cancer
In therapy, it is thus necessary to determine that irradiate exact position and the size of incidence.At present, existing multiple sensors are used for the detection irradiated.
FBAR (FBAR, thin-film bulk acoustic wave resonators) is a kind of
New miniature electro-acoustic resonator, there is high sensitivity, senior engineer's working frequency and low-power consumption.Traditional gal is substituted with FBAR
Horse irradiates detecting element and is distributed in array, can build a kind of new high-frequency resonant formula gamma irradiation dosimeter, meet
Array, high sensitivity, the demand of microminaturization gamma irradiation dose measurement.Its operation principle is：Irradiation makes FBAR flat board
Electric capacity (C0) increase, so as to reduce FBAR resonant frequency；Measured using appropriate radio circuit or vector network analyzer
FBAR resonance frequency shift, the measurement of real irradiation dose；The FBAR being distributed in array can realize that irradiation dose is distributed
Detection.
A kind of irradiation sensor based on FBAR of research is subsidized by US National Aeronautics and Space Administration, this has researched and proposed two
Kind structure：One kind is that radiation sensitive is placed between piezoelectric layer and hearth electrode, and radiation sensitive layer uses LPCVD process deposits；Separately
One kind is that radiation sensitive is placed between piezoelectric layer and top electrode, and radiation sensitive layer is deposited using pecvd process, it is characterised in that
Using through hole type FBAR as detecting element.The shortcomings that program is：First, FBAR does not have temperature compensating layer, and temperature is to FBAR
Resonant frequency has a great influence；2nd, due to there was only single detecting element, therefore the distribution of irradiation dose can not be detected.
Rados Technology OY discloses Publication No. CN1138901, and publication date is Finland's hair on December 25th, 1996
Bright patent document, the document are related to a kind of method using the dosimeter measurement ionizing radiation with floating gate MOSFET transistor.
The major defect of the program is：A big inductance is needed during for radio communication, therefore the miniaturization for limiting this device is dived
Power.
Beijing Radiomedicine Inst. discloses Publication No. CN2369254, and publication date is the China on March 15th, 2000
Patent of invention document, the document are related to a kind of thermoluminescent personal dosimeter, in order to after determining irradiation the dosage that bears, it is necessary to heat
Fluorescent Densitomet is released to heat and use spectrometer measurement to launch light intensity.The shortcomings that program is：Need effective post processing accurate
Determine the dosage that irradiation absorbs.
The content of the invention
The present invention is in order to solve above-mentioned technological deficiency, there is provided the array gamma irradiation agent of FBAR structures on a kind of diaphragm
Gauge meter, the array gamma irradiation dosimeter meter of this kind of structure is except with high sensitivity, (frequency shift (FS)/ionization dosage exists
1000kHz/krad magnitudes), low-power consumption (FBAR has low-power consumption a little), manufacturing it is good (compatible with CMOS technology to be easy to single
Piece integrates, it is not necessary to use big inductance), senior engineer's working frequency (resonant frequency is in GHz magnitudes), moreover it is possible to it is sensitive to FBAR to improve temperature
The influence of degree, add the mechanical strength of device；The array gamma irradiation dosimeter of FBAR structures on diaphragm, it is expected to meet battle array
Column, high sensitivity, the demand of microminaturization gamma irradiation dose measurement.
To achieve the above object, the present invention takes following technical scheme：
The array gamma irradiation dosimeter of FBAR structures on diaphragm, it is characterised in that：Including detecting element, laminated film
With Si pedestals, detecting element is located above laminated film, and laminated film is used to support detecting element, and Si pedestals are located at laminated film
Below；Detecting element includes the FBAR that some rectangular array formulas are distributed in above laminated film, and FBAR is from down to up successively
Including hearth electrode, piezoelectric layer and top electrode, radiation sensitive layer is arranged between piezoelectric layer and hearth electrode or is arranged at piezoelectric layer
Between top electrode, hearth electrode is close to laminated film upper surface；Si pedestals are provided with some cavitys, cavity and radiation sensitive layer
Position in the vertical corresponds, and cavity is used to form bulk acoustic wave reflecting interface.
The quantity of the FBAR is N × M, and N, M are positive integer.
The FBAR shapes can be arbitrary polygon.
Corresponding laminated film region is the hanging region of laminated film above the cavity.
The FBAR of the detecting element is connected by lead with pad.
The lead includes hearth electrode lead and top electrode lead, and pad includes hearth electrode pad and top electrode pad,
FBAR hearth electrode is connected by hearth electrode lead with hearth electrode pad, and FBAR top electrode passes through top electrode lead and top electrode
Pad connects.
For the attachment structure of FBAR, pad and lead, it may include following connected mode：
The first connected mode：Each column FBAR hearth electrode is welded by same hearth electrode lead and same hearth electrode
Disk is connected, and often row FBAR top electrode is all connected by same top electrode lead with same top electrode pad；Or often go
FBAR hearth electrode is all connected by same hearth electrode lead with same hearth electrode pad, and each column FBAR top electrode is all logical
Same top electrode lead is crossed to be connected with same top electrode pad.
Based on the first connected mode：
If radiation sensitive is placed between piezoelectric layer and hearth electrode, a part for piezoelectric layer bottom surface is close to radiation sensitive layer
Upper surface, another part of piezoelectric layer bottom surface coat radiation sensitive layer side and hearth electrode side to both sides and extend to THIN COMPOSITE
The hanging region upper surface of film, the part of top electrode bottom surface are close to the upper surface of piezoelectric layer, another part of top electrode bottom surface to
Both sides coat piezoelectric layer side and extend to the hanging region upper surface of laminated film；
If radiation sensitive is placed between piezoelectric layer and top electrode, a part for piezoelectric layer bottom surface is close to hearth electrode upper table
Face, another part of piezoelectric layer bottom surface coat hearth electrode side to both sides and extend to the hanging region upper surface of laminated film, push up
A part for electrode bottom surface is close to the upper surface of radiation sensitive layer, and another part of top electrode bottom surface coats radiation sensitive to both sides
Layer side and piezoelectric layer side simultaneously extend to the hanging region upper surface of laminated film.
Second of connected mode：Each column FBAR hearth electrode is all connected to same bottom electricity by respective hearth electrode lead
In the bus of pole, often row FBAR top electrode is all connected in same top electrode bus by respective top electrode lead；Or
Often row FBAR hearth electrode is all connected in same hearth electrode bus by respective hearth electrode lead, each column FBAR top electricity
Pole is all connected in same top electrode bus by respective top electrode lead；Every hearth electrode bus connects a hearth electrode
Pad, every top electrode bus connect a top electrode pad.
Based on second of connected mode：
If radiation sensitive is placed between piezoelectric layer and hearth electrode, a part for piezoelectric layer bottom surface is close to radiation sensitive layer
Upper surface, another part of piezoelectric layer bottom surface coat radiation sensitive layer side and hearth electrode side to side and extend to THIN COMPOSITE
The hanging region upper surface of film, the part of top electrode bottom surface are close to the upper surface of piezoelectric layer, another part of top electrode bottom surface to
Both sides coat piezoelectric layer side and extend to the hanging region upper surface of laminated film；
If radiation sensitive is placed between piezoelectric layer and top electrode, a part for piezoelectric layer bottom surface is close to hearth electrode upper table
Face, another part of piezoelectric layer bottom surface coat hearth electrode side to side and extend to the hanging region upper surface of laminated film, push up
A part for electrode bottom surface is close to the upper surface of radiation sensitive layer, and another part of top electrode bottom surface coats radiation sensitive to both sides
Layer side and piezoelectric layer side simultaneously extend to the hanging region upper surface of laminated film.
In second of connected mode piezoelectricity is covered with top electrode bus and hearth electrode bus infall, hearth electrode bus
Layer, top electrode bus is from the upper surface of the piezoelectric layer by because the piezoelectric layer has insulating properties it is achieved thereby that top electrode
The insulation of bus and hearth electrode bus, the piezoelectric layer are the same materials for having same thickness with the piezoelectric layer in FBAR, therefore
It can be formed by same primary depositing and patterning process.
The hearth electrode, hearth electrode lead and hearth electrode pad are the conductor materials of the same race for having same thickness, therefore
It can be formed by same primary depositing and patterning process；Top electrode, top lead and top electrode pad are with same thickness
Conductor material of the same race, therefore can be formed by same primary depositing and patterning process.Because the hanging region of laminated film is
A part for laminated film, the hanging region of laminated film are a continuous, complete plane, hearth electrode lead and top electrode lead
The corresponding support of Si pedestals can be may be contained within laminated film region upper surface flexible route, hearth electrode pad and top electrode pad
Laminated film upper surface.
For radiation sensitive layer, further it is defined to：
Si can be used in the radiation sensitive layer3N4Or SiO2Material, and deposited using PECVD or LPCVD process layers.
For cavity, further it is defined to：
The cavity is to be formed after the back-patterned formation etching window of silicon substrate by deep reaction ion etching.Si
Pedestal forms cavity with the space that laminated film surrounds, and air is filled in cavity.The interface of cavity and laminated film is used to be formed
FBAR bulk acoustic wave reflecting interface.
In order to obtain high performance FBAR, sound wave need to be limited in the FBAR being made up of hearth electrode-piezoelectric layer-top electrode
In.According to transmission line theory, when load is zero or is infinitely great, incidence wave will be totally reflected, and the acoustic impedance of air is approximately equal to zero,
Can be as good bulk acoustic wave reflecting boundary.And top electrode typically and air contact, naturally form good body in FBAR
Sound wave reflecting interface, hearth electrode is because being placed in above laminated film so needing artificially to form bulk acoustic wave reflecting interface, in this hair
Bright middle cavity-SiO2Layer is bulk acoustic wave reflecting interface.
For laminated film, further it is defined to：
The laminated film is square diaphragm, and laminated film includes SiO2Layer and Si3N4Layer, SiO2Layer is connected with Si pedestals,
Si3N4Layer is located at SiO2Above, the thickness of laminated film is SiO to layer2Layer and Si3N4The thickness sum of layer.
Supporting layer of the laminated film as FBAR.
SiO in the laminated film2Layer has positive temperature coefficient, is prepared by CVD techniques；FBAR piezoelectric layer has
Negative temperature coefficient；The SiO in the hanging region of laminated film2Layer is compound with FBAR piezoelectric layer, carries out temperature-compensating, can improve FBAR
Temperature stability.
By FBAR series resonance frequencys fsWith the relational expression between piezoelectric layer coefficient of elasticity c：Know, press
The coefficient of elasticity c and series resonance frequency f of electric layersIt is directly proportional.Phase interaction between existing its interior atoms of most piezoelectric layers
Negative temperature characteristic is all typically firmly shown, i.e., as temperature raises, interatomic interaction force weakens, and causes piezoelectric layer
Coefficient of elasticity diminishes.And FBAR resonant frequency and the coefficient of elasticity of piezoelectric layer are proportional, therefore, with the liter of temperature
Height, FBAR resonant frequency reduce.To reduce the influence of this temperature-frequency drift characteristic, it is necessary to enter trip temperature benefit to FBAR
Repay to improve its temperature stability.Due to SiO2The Young's modulus of layer increases with the rise of temperature, i.e., its temperature coefficient is just
It is worth (about+85/ DEG C), therefore, as the SiO of positive temperature coefficient2Layer can reduce each other in the piezoelectric layer compound tense with negative temperature coefficient
Temperature drift, therefore use SiO2Layer is as the understructure in laminated film.
The SiO2Self-stopping technology layer when layer is as silicon substrate back-etching；Due to etchant SiO2Speed it is far small
In etching Si speed, it can be ensured that the etching of silicon substrate will not be to SiO2/Si3N4The thickness of flexible sheet has an impact.
The Si3N4Layer and SiO2Layer is compound, the mechanical strength available for enhancing laminated film.Meanwhile Si3N4Layer is insulation
Material, the hearth electrode in FBAR can directly sputter at Si3N4On layer.
Because resonant frequency influences of the Si on FBAR is very big, FBAR can be made to produce multiple modes of resonance, be unfavorable for irradiation letter
Number detection, therefore superstructure of the Si layers as laminated film can not be used.Si3N4Layer have high compactness, high-k and
The excellent mechanical performances such as the excellent physical property such as high insulation resistance and fatigue resistance are high, resistance to fracture is strong；It is and relatively thin
Si3N4Layer will not have an impact to FBAR resonant frequency.In order to improve the mechanical strength of device, therefore use Si3N4Layer conduct
The superstructure of laminated film.
Beneficial effects of the present invention are as follows：
The present invention is while array gamma irradiation dosimeter high sensitivity is realized with senior engineer's working frequency, moreover it is possible to improves
FBAR temperature stability, laminated film is formed using the relatively simple back of the body chamber etching technics of technique, device mechanical strength is big, cloth
Line is convenient；The array gamma irradiation dosimeter of FBAR structures on diaphragm, it is expected to meet array, high sensitivity, microminaturization
The demand of gamma irradiation dose measurement.
Brief description of the drawings
Fig. 1-2 is respectively the overlooking the structure diagram that FBAR of the present invention is the first connected mode of different shapes；
Fig. 3 is Fig. 1 A-A cross-sectional views；
Fig. 4-11 is the main manufacturing process steps schematic diagram of structure shown in Fig. 3；
Figure 12-13 is respectively the overlooking the structure diagram that FBAR of the present invention is second of connected mode of different shapes；
Figure 14 is Figure 12 B-B cross-sectional views；
Figure 15-22 is the main manufacturing process steps schematic diagram of shown structure；
Wherein, reference is：2 hearth electrode pads, 3 top electrode pads, 4 hearth electrode leads, 5 top electrode leads, 6 is compound
Film, the hanging region of 7 laminated films, 8Si pedestals, 9 cavitys, 10Si2O layers, 11Si3N4Layer, 12 hearth electrodes, 13 piezoelectric layers, 14 spokes
According to sensitive layer, 15 top electrodes, 16 hearth electrode buses, 17 top electrode buses.
Embodiment
The present invention is elaborated below in conjunction with the accompanying drawings：
The array gamma irradiation dosimeter of FBAR structures on diaphragm, including detecting element, laminated film 6 and Si pedestals 8,
Detecting element is above laminated film 6, and laminated film 6 is used to support detecting element, and Si pedestals 8 are located at below laminated film 6；Inspection
Survey element and include the FBAR that some rectangular array formulas are distributed in above laminated film 6, FBAR includes bottom successively from down to up
Electrode 12, piezoelectric layer 13 and top electrode 15, radiation sensitive layer 14 are arranged between piezoelectric layer 13 and hearth electrode 12 or are arranged at
Between piezoelectric layer 13 and top electrode 15, hearth electrode 12 is close to the upper surface of laminated film 6；Si pedestals 8 are provided with some cavitys 9,
Position of the cavity 9 with radiation sensitive layer 14 in the vertical corresponds, and cavity 9 is used to form bulk acoustic wave reflecting interface.
The quantity of the FBAR is N × M, and N, M are positive integer, and FBAR shapes can be any regular polygon, Ke Yishi
Square or Fig. 2 as shown in Fig. 1,12, regular pentagon shown in 13 etc.；The FBAR of detecting element quantity be N ×
M and the distribution of rectangular array formula, N, M are positive integer.
The FBAR of the detecting element is connected by lead with pad.
The lead includes hearth electrode lead 4 and top electrode lead 5, and pad includes hearth electrode pad 2 and top electrode pad
3, FBAR hearth electrode 12 is connected by hearth electrode lead 4 with hearth electrode pad 2, and FBAR top electrode 15 passes through top electrode lead
5 are connected with top electrode pad 3.
For the attachment structure of FBAR, pad and lead, it may include following connected mode：
As shown in figs. 1-11, the first connected mode：
Each column FBAR hearth electrode 12 is connected by same hearth electrode lead 4 with same hearth electrode pad 2, is often gone
FBAR top electrode 15 is all connected by same top electrode lead 5 with same top electrode pad 3；Or every row FBAR
Hearth electrode 12 is all connected by same hearth electrode lead 4 with same hearth electrode pad 2, and each column FBAR top electrode 15 is all logical
Same top electrode lead 5 is crossed to be connected with same top electrode pad 3.
Based on the first connected mode：
If radiation sensitive layer 14 is placed between piezoelectric layer 13 and hearth electrode 12, a part for the bottom surface of piezoelectric layer 13 is close to spoke
According to the upper surface of sensitive layer 14, another part of the bottom surface of piezoelectric layer 13 coats the side of radiation sensitive layer 14 and the side of hearth electrode 12 to both sides
Face simultaneously extends to the hanging upper surface of region 7 of laminated film, and a part for the bottom surface of top electrode 15 is close to the upper surface of piezoelectric layer 13, top
Another part of the bottom surface of electrode 15 coats the side of piezoelectric layer 13 to both sides and extends to the hanging upper surface of region 7 of laminated film；
If radiation sensitive layer 14 is placed between piezoelectric layer 13 and top electrode 15, a part for the bottom surface of piezoelectric layer 13 is close to bottom
The upper surface of electrode 12, another part of the bottom surface of piezoelectric layer 13 coats the side of hearth electrode 12 to both sides and to extend to laminated film hanging
The upper surface of region 7, a part for the bottom surface of top electrode 15 are close to the upper surface of radiation sensitive layer 14, another portion of the bottom surface of top electrode 15
Divide and coat the side of radiation sensitive layer 14 and the side of piezoelectric layer 13 to both sides and extend to the hanging upper surface of region 7 of laminated film.
As shown in Figure 12-22, second of connected mode：
Each column FBAR hearth electrode 12 is all connected in same hearth electrode bus 16 by respective hearth electrode lead 4,
Often row FBAR top electrode 15 is all connected in same top electrode bus 17 by respective top electrode lead 5；Or often go
FBAR hearth electrode 12 is all connected in same hearth electrode bus 16 by respective hearth electrode lead 4, each column FBAR top
Electrode 15 is all connected in same top electrode bus 17 by respective top electrode lead 5；Every hearth electrode bus 16 connects
One hearth electrode pad 2, every top electrode bus 17 connect a top electrode pad 3.
Based on second of connected mode：
If radiation sensitive layer 14 is placed between piezoelectric layer 13 and hearth electrode 12, a part for the bottom surface of piezoelectric layer 13 is close to spoke
According to the upper surface of sensitive layer 14, another part of the bottom surface of piezoelectric layer 13 coats the side of radiation sensitive layer 14 and the side of hearth electrode 12 to side
Face simultaneously extends to the hanging upper surface of region 7 of laminated film, and a part for the bottom surface of top electrode 15 is close to the upper surface of piezoelectric layer 13, top
Another part of the bottom surface of electrode 15 coats the side of piezoelectric layer 13 to both sides and extends to the hanging upper surface of region 7 of laminated film；
If radiation sensitive layer 14 is placed between piezoelectric layer 13 and top electrode 15, a part for the bottom surface of piezoelectric layer 13 is close to bottom
The upper surface of electrode 12, another part of the bottom surface of piezoelectric layer 13 coats the side of hearth electrode 12 to side and to extend to laminated film hanging
The upper surface of region 7, a part for the bottom surface of top electrode 15 are close to the upper surface of radiation sensitive layer 14, another portion of the bottom surface of top electrode 15
Divide and coat the side of radiation sensitive layer 14 and the side of piezoelectric layer 13 to both sides and extend to the hanging upper surface of region 7 of laminated film.
Covered in second of connected mode in top electrode bus 17 and the infall of hearth electrode bus 16, hearth electrode bus 16
Piezoelectric layer 13, top electrode bus 17 from the upper surface of the piezoelectric layer 13 by, due to the piezoelectric layer 13 have insulating properties from
And the insulation of top electrode bus 17 and hearth electrode bus 16 is realized, the piezoelectric layer 13 is with phase with the piezoelectric layer 13 in FBAR
The same material of stack pile, therefore can be formed by same primary depositing and patterning process.
The hearth electrode 12, hearth electrode lead 4 and hearth electrode pad 2 are the conductor materials of the same race for having same thickness,
Therefore can be formed by same primary depositing and patterning process；Top electrode 15, top lead and top electrode pad 3 are with phase
The conductor material of the same race of stack pile, therefore can be formed by same primary depositing and patterning process.Because laminated film is hanging
Region 7 is a part for laminated film 6, and the hanging region 7 of laminated film is a continuous, complete plane, the He of hearth electrode lead 4
Top electrode lead 5 can may be contained within laminated film region upper surface flexible route, hearth electrode pad 2 and top electrode pad 3
The upper surface of laminated film 6 of the corresponding support of Si pedestals 8.
For radiation sensitive layer 14, further it is defined to：
Si can be used in the radiation sensitive layer 143N4Or SiO2Material, and deposited using PECVD or LPCVD process layers.Spoke
It can be placed between piezoelectric layer 13 and hearth electrode 12 according to sensitive layer 14, can also be placed between piezoelectric layer 13 and top electrode 15.
For cavity 9, further it is defined to：
Fig. 7 is that the back of the body of the one of unit of the present invention regards structural representation, and the cavity 9 is back-patterned in silicon substrate
Formed after etching window by deep reaction ion etching formation.Si pedestals 8 form cavity 9 with the space that laminated film 6 surrounds,
Filling air in cavity 9.
The interface of the cavity 9 and laminated film 6 is used for the bulk acoustic wave reflecting interface for forming FBAR.
For laminated film 6, further it is defined to：
The laminated film 6 is square diaphragm, and laminated film 6 includes SiO210 and Si of layer3N4 layers 11, SiO210 and Si of layer
Pedestal 8 connects, Si3N4Layer 11 is located at SiO2Above layer 10, the thickness of laminated film 6 is SiO210 and Si of layer3N4The thickness of layer 11
Spend sum.
Supporting layer of the laminated film 6 as FBAR.
SiO in the laminated film 62Layer 10 has positive temperature coefficient, is prepared by CVD techniques；FBAR piezoelectric layer
13 have negative temperature coefficient；The SiO in the hanging region 7 of laminated film2Layer 10 is compound with FBAR piezoelectric layer 13, enters trip temperature benefit
Repay, FBAR temperature stability can be improved.
Gamma irradiation is incided on radiation sensitive layer 14 and piezoelectric layer 13, produces electron-hole pair (EHPs, electron-
Hole pairs), trigger ionization damage.The density of electron-hole pair is directly proportional to the energy shifted.Electron-hole pair produces
Afterwards, fraction electronics and hole will soon be compound.Because electronics has higher mobility, can be obtained than hole-recombination faster,
Cause unnecessary hole migration into the deep hole trap of radiation sensitive layer 14 or the interface of 14/ piezoelectric layer of radiation sensitive layer 13.It is empty
Transporting for cave is characterized using the electric charge " jump " (charge " hopping ") between surface defect point in dielectric.Herein, capture
Electric charge accumulated, change the surface potential of piezoelectric layer 13 or radiation sensitive layer 14 so that capacity plate antenna (C0) increase, from
And reduce FBAR resonant frequency.
The model for the irradiation effect that can be established in solid material.One ionization photon every dose of unit volume from target material
EHPs caused by amount quantity (namely " propagation constant, generation constant ") g0, it is given by：
In formula, EpIt is the required average free energy of ionization (about 2 times of band gap), ρ is the density of target material.Any
In the given time, escaping the fraction hole of recombination process can be represented with the hole continuity equation in one-dimensional (x directions)：
In formula, p is the concentration (cm in hole-3), fp,xIt is the flux in hole, GpIt is the generation speed (cm in hole-3s-1), Rp
It is the hole-recombination speed (cm of delay-3s-1).If it is assumed that the device is in stable state and delay recombination rate can be ignored, formula
(2) it is rewritten as：
In formula, radiation-induced hole generation rate is given by：
In formula,It is radiation dose rate, g0It is the propagation constant that formula (1) provides, fyIt is relevant with internal field in device
Electric charge yield, can using approximate representation as：
In formula, E0It is threshold field constant.Simultaneous formula (3) simultaneously uses boundary condition, can be two different electric field sides
To the flux for solving hole：
In formula, tdIt is dielectric thickness.Finally, the hole capture speed of semiconductor-dielectric near interface can be with table
It is shown as：
In formula, notAnd ntRespectively be capture hole density and capture point density, σpIt is Hole Capture Cross Section (cm2).It is multiple
Close the factorRepresent the clearance in the capture hole from system.Sign again after being irradiated five hours due to last time
It was found that and the no deviation of previous measurement, it is therefore assumed that composite factor can be ignored.
The main manufacturing process steps schematic diagram of the first connected mode of the invention, including such as eight main techniques of Fig. 4-11
Step.Fig. 4 is initial silicon substrate；In Figure 5, by dry-wet-dry oxidation, surface forms one layer of SiO on a silicon substrate2Layer
10；In figure 6, by LPCVD in SiO210 upper surface of layer form one layer of Si3N4Layer 11, SiO210 and Si of layer3N4Layer 11 constitutes
Laminated film 6；In the figure 7, peeled off by magnetron sputtering and ultrasound in Si3N411 upper surface of layer form Pt hearth electrodes 12, hearth electrode
Lead 4, hearth electrode pad 2；In fig. 8, formed by reaction magnetocontrol sputtering and TMAH solution corrosion in the upper surface of hearth electrode 12
AlN piezoelectric layers 13；In fig.9, Si is formed in the upper surface of AlN piezoelectric layers 13 by PECVD depositions and RIE etchings3N4Radiation sensitive
Layer 14；In Fig. 10, by magnetron sputtering and wet etching in Si3N4The upper surface formation Al top electrodes 15 of radiation sensitive layer 14,
Top electrode lead 5 and top electrode pad 3；In fig. 11, local quarter is carried out to the back side of silicon substrate by deep reaction ion etching
Erosion, form cavity 9.
The main manufacturing process steps schematic diagram of second of connected mode of the invention, including such as eight main works of Figure 15-22
Skill step.Figure 15 is initial silicon substrate；In figure 16, by dry-wet-dry oxidation, surface forms one layer of SiO on a silicon substrate2
Layer 10；In fig. 17, by LPCVD in SiO210 upper surface of layer form one layer of Si3N4Layer 11, SiO210 and Si of layer3N411 structure of layer
Into laminated film 6；In figure 18, peeled off by magnetron sputtering and ultrasound in Si3N411 upper surface of layer formation Pt hearth electrodes 12,
Hearth electrode lead 4, hearth electrode bus 16, hearth electrode pad 2；In Figure 19, corroded by reaction magnetocontrol sputtering and TMAH solution
AlN piezoelectric layers 13 are formed in the upper surface of hearth electrode 12, and AlN is also formed in hearth electrode bus 16 and the infall of top electrode bus 17
Piezoelectric layer 13；In fig. 20, radiation sensitive layer 14 is formed in the upper surface of AlN piezoelectric layers 13 by PECVD depositions and RIE etchings；
In figure 21, by magnetron sputtering and wet etching in Si3N4The upper surface of radiation sensitive layer 14 forms Al top electrodes 15, top electricity
Pole lead 5, top electrode bus 17 and top electrode pad 3；In fig. 22, the back side of silicon substrate is entered by deep reaction ion etching
Row local etching, form cavity 9.
Claims (15)
1. the array gamma irradiation dosimeter of FBAR structures on diaphragm, it is characterised in that：Including detecting element, laminated film and
Si pedestals, detecting element are located above laminated film, and laminated film is used to support detecting element, and Si pedestals are located under laminated film
Face；Detecting element includes the FBAR that some rectangular array formulas are distributed in above laminated film, and FBAR is wrapped successively from down to up
Include hearth electrode, piezoelectric layer and top electrode, radiation sensitive layer be arranged between piezoelectric layer and hearth electrode or be arranged at piezoelectric layer with
Between top electrode, hearth electrode is close to laminated film upper surface；Si pedestals are provided with some cavitys, and cavity exists with radiation sensitive layer
Position on longitudinal direction corresponds, and cavity is used to form bulk acoustic wave reflecting interface, and corresponding laminated film region is above cavity
The hanging region of laminated film；The quantity of the FBAR is N × M, and N, M are positive integer.
2. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 1, it is characterised in that：It is described
The FBAR of detecting element is connected by lead with pad；The lead includes hearth electrode lead and top electrode lead, and pad includes
Hearth electrode pad and top electrode pad, FBAR hearth electrode are connected by hearth electrode lead with hearth electrode pad, FBAR top electricity
Pole is connected by top electrode lead with top electrode pad.
3. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 2, it is characterised in that：
FBAR, pad and lead connected mode is：Each column FBAR hearth electrode passes through same hearth electrode lead and same bottom
Electrode pad is connected, and often row FBAR top electrode is all connected by same top electrode lead with same top electrode pad；Or
Person, often row FBAR hearth electrode be all connected by same hearth electrode lead with same hearth electrode pad, each column FBAR top
Electrode is all connected by same top electrode lead with same top electrode pad.
4. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 3, it is characterised in that：Work as spoke
When being placed on according to sensitivity between piezoelectric layer and hearth electrode, a part for piezoelectric layer bottom surface is close to radiation sensitive layer upper surface, piezoelectricity
Another part of layer bottom surface coats radiation sensitive layer side and hearth electrode side to both sides and extends to the hanging region of laminated film
Upper surface, a part for top electrode bottom surface are close to the upper surface of piezoelectric layer, and another part of top electrode bottom surface coats to both sides presses
Electric layer side simultaneously extends to the hanging region upper surface of laminated film.
5. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 3, it is characterised in that：Work as spoke
When being placed on according to sensitivity between piezoelectric layer and top electrode, a part for piezoelectric layer bottom surface is close to hearth electrode upper surface, piezoelectric layer bottom
The another part in face coats hearth electrode side to both sides and extends to the hanging region upper surface of laminated film, and the one of top electrode bottom surface
The upper surface of radiation sensitive layer is close in part, and another part of top electrode bottom surface coats radiation sensitive layer side and piezoelectricity to both sides
Layer side simultaneously extends to the hanging region upper surface of laminated film.
6. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 2, it is characterised in that：
FBAR, pad and lead connected mode is：Each column FBAR hearth electrode is all connected to same by respective hearth electrode lead
In bar hearth electrode bus, often row FBAR top electrode is all connected to same top electrode bus by respective top electrode lead
On；Or often row FBAR hearth electrode is all connected in same hearth electrode bus by respective hearth electrode lead, each column
FBAR top electrode is all connected in same top electrode bus by respective top electrode lead；Every hearth electrode bus connection
One hearth electrode pad, every top electrode bus connect a top electrode pad.
7. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 6, it is characterised in that：If
Radiation sensitive is placed between piezoelectric layer and hearth electrode, and a part for piezoelectric layer bottom surface is close to radiation sensitive layer upper surface, piezoelectricity
Another part of layer bottom surface coats radiation sensitive layer side and hearth electrode side to side and extends to the hanging region of laminated film
Upper surface, a part for top electrode bottom surface are close to the upper surface of piezoelectric layer, and another part of top electrode bottom surface coats to both sides presses
Electric layer side simultaneously extends to the hanging region upper surface of laminated film.
8. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 6, it is characterised in that：If
Radiation sensitive is placed between piezoelectric layer and top electrode, and a part for piezoelectric layer bottom surface is close to hearth electrode upper surface, piezoelectric layer bottom
The another part in face coats hearth electrode side to side and extends to the hanging region upper surface of laminated film, and the one of top electrode bottom surface
The upper surface of radiation sensitive layer is close in part, and another part of top electrode bottom surface coats radiation sensitive layer side and piezoelectricity to both sides
Layer side simultaneously extends to the hanging region upper surface of laminated film.
9. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 6, it is characterised in that：Pushing up
Electrode bus and hearth electrode bus infall, piezoelectric layer, upper table of the top electrode bus from piezoelectric layer are covered with hearth electrode bus
Face passes through；Piezoelectric layer is the same material for having same thickness with the piezoelectric layer in FBAR, by same primary depositing and graphically
Technique is formed.
10. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 2, it is characterised in that：Institute
It is the conductor material of the same race for having same thickness to state hearth electrode, hearth electrode lead and hearth electrode pad, passes through same primary depositing
Formed with patterning process；Top electrode, top lead and top electrode pad are the conductor materials of the same race for having same thickness, are passed through
Formed with primary depositing and patterning process；The hearth electrode lead and top electrode lead are flexible in laminated film region upper surface
Wiring, hearth electrode pad and top electrode pad may be contained within the laminated film upper surface of the corresponding support of Si pedestals.
11. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 1, it is characterised in that：Institute
State radiation sensitive layer and use Si3N4Or SiO2Material, and deposited using PECVD or LPCVD process layers.
12. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 1, it is characterised in that：Institute
It is to be formed after the back-patterned formation etching window of silicon substrate by deep reaction ion etching to state cavity.
13. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 1, it is characterised in that：Institute
It is square diaphragm to state laminated film, and laminated film includes SiO2Layer and Si3N4Layer, SiO2Layer is connected with Si pedestals, Si3N4Layer is located at
SiO2Above, the thickness of laminated film is SiO to layer2Layer and Si3N4The thickness sum of layer.
14. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 12, it is characterised in that：Institute
State the SiO in laminated film2Layer has positive temperature coefficient, is prepared by CVD techniques；The piezoelectric layer of the FBAR has negative temperature
Coefficient；The SiO of laminated film2Layer is compound with FBAR piezoelectric layer, temperature-compensating is carried out, for improving FBAR temperature stabilization
Property.
15. the array gamma irradiation dosimeter of FBAR structures on diaphragm according to claim 1, it is characterised in that：Institute
State SiO2Self-stopping technology layer when layer is as silicon substrate back-etching.
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| CN106921363B (en) * | 2017-03-10 | 2019-12-27 | 电子科技大学 | Film bulk acoustic resonator |
| CN107007287A (en) * | 2017-05-23 | 2017-08-04 | 中国科学院电子学研究所 | Biomolecule detection devices and method |
| CN107171654A (en) * | 2017-06-14 | 2017-09-15 | 杭州左蓝微电子技术有限公司 | The FBAR and processing method combined based on solid-state and cavity |
| CN111952436B (en) * | 2020-08-19 | 2022-03-29 | 国网河南省电力公司电力科学研究院 | Preparation process of passive piezoelectric self-powered unit structure |
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