CN107731652B - Radiation ray detection device and preparation method thereof - Google Patents
Radiation ray detection device and preparation method thereof Download PDFInfo
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- CN107731652B CN107731652B CN201710844083.6A CN201710844083A CN107731652B CN 107731652 B CN107731652 B CN 107731652B CN 201710844083 A CN201710844083 A CN 201710844083A CN 107731652 B CN107731652 B CN 107731652B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
- H01J47/08—Geiger-Müller counter tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
- H01J47/001—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
- H01J47/001—Details
- H01J47/002—Vessels or containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
- H01J47/001—Details
- H01J47/005—Gas fillings ; Maintaining the desired pressure within the tube
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Abstract
Radiation ray detection device and preparation method thereof, wherein radiation ray detection device includes: highly conductive silicon base, comprising: at least one base unit of periodic arrangement, each base unit includes: inner substrate, the outer substrate of encirclement inner substrate and the cavity surrounded by inner substrate and outer substrate；First insulating layer, is placed in highly conductive silicon base upper surface, and structure is corresponding with highly conductive silicon base；Second insulating layer is placed in highly conductive silicon substrate bottom surface, and the groove at least one face inner substrate is formed with metal electrode in the groove, using as at least one anode；Groove at least one face outer substrate is formed with metal electrode in the groove, using as at least one cathode；Vitreum is placed in the upper surface of the first insulating layer, is bonded with anode.The contact area of anode is much smaller than cathode contact area, and outer substrate encirclement inner substrate structure can further increase cavity area, to significantly improve the detection efficiency of radiating particle.
Description
Technical field
The invention belongs to radiation detection arts, relate more specifically to a kind of radiation ray detection device and preparation method thereof.
Background technique
In recent years, the civil nature of nuclear reactor offer convenience to the mankind, the lasting energy, but because human operational error and setting
The leakage accident problem of nuclear reactor caused by standby problem is also noticeable.Environmental pollution caused by nuclear accident is subject to the public
Radiation hazradial bundle is quite huge, and such as the Chernobyl accident occurred in 1986 causes about 100,000 people's death and hundreds of thousands of them by various
The irradiation diseases of degree torment；Amount of radiation in the Fukushima, Japan nuclear leakage accident occurred in 2011 around nuclear power station reaches safety
1000 times of value.Therefore, the research and development of the stable portable radiant ray detecting apparatus of technical performance are particularly critical, portability core spoke
Penetrating the universal of instrument can allow the common people to make corresponding safeguard procedures.
The use of portable radiant ray detecting apparatus has:
1, amount of radiation is detected to ensure to contact the health and safety of particular job person of nuclear matter.This is because core spoke
Serious damage can be brought to body by the ionization to cell tissue by penetrating, and cause the necrosis and gene lesion of cell tissue.Permit
Perhaps radiation level is defined as the radiant quantity that human body can be born daily, and the radiation gamma-rays that daily human body allows measures micro- for 100
Roentgen.
2, for needing to detect the nuclear matter detection and national defense safety of γ particle and neutron；
3, measure the nuclear radiation amount in nuclear reactor, nuclear reaction speed controlled with this, this is because nuclear fission along with
Neutron and high-energy gamma particle；
4, geographer has found the radioactivity being stored in stone and upper layer of soil using portable nuclear radiation detector
Element uranium；This is because being usually associated with gamma Rays around uranium element；
5, the isotope detection being often used in medical application, this is because isotope detection is the β by measuring low energy
It is realized with γ ion.
Scintillation counter is a kind of radiating particle sensitive detection parts, detection principle are as follows: radiating particle and media material first
Reaction generates swift electron, and electronics becomes fluorescence and discharge after interacting with counter, can by fluorescence intensity
Measure radiating particle intensity.But the device architecture of scintillation counter is complicated, size is big, power consumption is big, is in addition affected by temperature obvious.
Geiger counter is another kind of common radiation ray detection device.Traditional body product of covering to count about exists
10cm magnitude needs the cavity using inert gas such as helium (He), the neon (Ne) for being filled with certain pressure etc., two-plate sealing
Enter cavity, working bias voltage is in 500-1000V.Its testing principle are as follows: ray is incident to cavity by window, makes the gas of cavity inside
Body generates avalanche breakdown and ionizes out electronics, is then collected under the action of bias field by anode.Based on the production of this principle
The test result of detector is insensitive to temperature change, and back-end processing circuit structure is simple, and dynamic range is wide.But mesh
Preceding geiger counter is limited to be only capable of detection β, gamma-rays, and cannot tell the type of radiation ion.
Ceramics are reported as structure sheaf with the scheme for forming detector at present, and ceramics can hold big voltage.But it makes pottery
Mo or Ti powder is usually used in the encapsulation of porcelain, is bonded under 1500 °, therefore the preparation process of such detector is complicated, device encapsulation
Difficulty is big.
Summary of the invention
Based on problem above, it is a primary object of the present invention to propose a kind of nuclear radiation detection device and preparation method thereof,
For solving at least one of above technical problem.
To achieve the goals above, as one aspect of the present invention, a kind of radiation ray detection device is proposed, comprising:
Highly conductive silicon base comprising: at least one base unit of periodic arrangement, each base unit include: inner substrate, outer layer
Substrate and the cavity surrounded by inner substrate and outer substrate；First insulating layer is placed in highly conductive silicon base upper surface, structure
It is corresponding with highly conductive silicon base；Second insulating layer is placed in highly conductive silicon substrate bottom surface, has at least one face internal layer
The groove of substrate is formed with metal electrode in the groove, using as at least one anode；Also there is at least one face outer layer base
The groove at bottom is formed with metal electrode in the groove, using as at least one cathode；Vitreum is placed in the upper of the first insulating layer
Surface is bonded with anode.
In some embodiments of the invention, it is injected with medium at least one above-mentioned cavity, which includes10B
Nano particle, WO3Nano particle, lead oxide nano particle and/or inert gas.
In some embodiments of the invention, above-mentioned radiation ray detection device is MEMS.
In some embodiments of the invention, above-mentioned first insulating layer and/or the main material of second insulating layer include:
SiO2, SiN and/or silicon oxynitride.
In some embodiments of the invention, the side wall and/or pasted with inner substrate that above-mentioned cavity is bonded with outer substrate
The side wall of conjunction is formed with metal layer.
In some embodiments of the invention, above-mentioned outer substrate is positive hexagonal column, and inner substrate is cylindrical body.
In some embodiments of the invention, at least one above-mentioned cathode is multiple, is electrically connected between multiple cathode；
And/or at least one is just extremely multiple, is electrically connected between multiple anodes.
In some embodiments of the invention, on the surface of second insulating layer, there are also contact conductors；The contact conductor with extremely
A few anode and/or at least one cathode are electrically connected.
In some embodiments of the invention, above-mentioned radiation ray detection device is connected to oscillography by high-pass filtering circuit
Device, testing result to be presented in real time.
To achieve the goals above, as another aspect of the present invention, a kind of system of radiation ray detection device is proposed
Preparation Method, comprising the following steps: step 1, highly conductive silicon base upper and lower surfaces be respectively formed the first insulating layer and second absolutely
Edge layer；Step 2, the second insulating layer for removing partial region, to form at least two grooves for running through its thickness direction；And to extremely
Deposited metal in few two grooves, to form at least one anode and at least one cathode；Step 3, graphical etching first are absolutely
Edge layer and highly conductive silicon base, so that highly conductive silicon base forms at least one base unit of periodic arrangement, each substrate list
Member includes: inner substrate, outer substrate and the cavity surrounded by the inner substrate and outer substrate；And the inner substrate face
At least one anode, at least one cathode of outer substrate face；Step 4, the upper table that vitreum is placed in first insulating layer
Face, and be bonded with anode.
In some embodiments of the invention, the preparation method of above-mentioned radiation ray detection device, further comprising the steps of:
To the side wall deposition metal layer of at least one cavity；And it injects and includes10B nano particle, WO3Nano particle, lead oxide nanometer
The medium of grain and/or inert gas.
In some embodiments of the invention, the preparation method of above-mentioned radiation ray detection device, recessed at least two
It is further comprising the steps of in slot when deposited metal: in the lower surface of second insulating layer close to the area deposition of at least two grooves
Metal is as contact conductor, to be electrically connected at least one anode and/or at least one cathode.
In some embodiments of the invention, further comprising the steps of between above-mentioned steps 3 and step 4: at least one
At least one side wall deposition metal layer of a cavity.
Radiation ray detection device proposed by the present invention and preparation method thereof, has the advantages that
1, the radiation ray detection device being arranged, due to the base unit structure that highly conductive silicon base is periodic arrangement, and
Its outer substrate face cathode, inner substrate face anode, therefore the highly conductive silicon volume of cathode contact is big, the height of anode contact
Conductive silicon is small in size, so that the contact area of anode is much smaller than cathode contact area；And outer substrate surrounds the knot of inner substrate
Structure can further increase cavity area, to significantly improve the detection efficiency of radiating particle；
2, can be injected in cavity different medium (including10B nano particle, WO3Nano particle and/or lead oxide are received
Rice grain etc.), these different mediums can be acted on the radiation rays such as neutron, α, β, γ and X-ray respectively, can not only be increased
The electronics for adding absorptivity, and releasing can excite avalanche electrons, and under operating bias voltage, signal amplitude is proportional to radiant matter
Incident intensity, to realize the detection of the radiation intensity of a variety of radiation rays；
3, it designs based on MEMS technology and makes radiation ray detection device, not with traditional ceramic Geiger counter structure
Together, detection device of the invention can be produced in enormous quantities, and consistency of performance is strong, and production is simple, small in size, at low cost；
4, insulating layer uses but is not limited to SiO2And/or SiN, good insulation electrically and thermally can be established, simultaneously also
It can be used to compensate stress；
5, by injecting different nano particles in device cavity, can increase in device work to different high-energy ray grains
The detecting and selecting property of son, and can be injected in a cavity there are many nano particle, in this way in measurement high-energy ray radiation intensity
The type of incoming particle can be judged by waveform and intensity simultaneously.
Detailed description of the invention
Fig. 1 is the usage scenario schematic diagram of radiation ray detection device proposed by the present invention；
Fig. 2 is the sectional structure chart for the radiation ray detection device that one embodiment of the invention proposes；
Fig. 3 (a)~Fig. 3 (e) is the preparation flow figure of radiation ray detection device in Fig. 2；
Fig. 4 (a)~Fig. 4 (c) is the mask plate schematic diagram used in the preparation flow of radiation ray detection device in Fig. 2；
Fig. 5 is the structure schematic diagram of radiation ray detection device under the microscope in Fig. 2；
Fig. 6 is the positive structure schematic of radiation ray detection device under the microscope in Fig. 2.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
The device of micro electronmechanical (micromechanical and electrical system, MEMS) technology production can be
Environmental monitoring provides great convenience.Such as the sensor of the pressure, temperature and humidity for monitoring environment, it detects toxic and waves
The gas sensor of hair property gas.Therefore corresponding radiation ray detection sensor, it should strong, the at low cost, function with portability
Consume the features such as small and performance is stablized.Existing α, β, gamma-ray solid semiconductor detection device, although exist volume compared with
Greatly, and work is usually required in low temperature.Some small-sized geiger counters based on silicon structure encapsulation, although small in size, power consumption
It is low, but this kind of device can only detect β, gamma-rays, and cannot tell the particle kind of detection.Therefore a kind of base is needed at present
In the small-size multifunction radiating particle detection device of MEMS technology production, it can detect that the type of radiating particle and its radiation are strong
Degree.
Therefore, the present invention proposes a kind of radiation ray detection device, comprising: highly conductive silicon base comprising: periodic arrangement
At least one base unit, each base unit includes: inner substrate, outer substrate and enclosed by inner substrate and outer substrate
At cavity；First insulating layer, is placed in highly conductive silicon base upper surface, and structure is corresponding with highly conductive silicon base；Second absolutely
Edge layer is placed in highly conductive silicon substrate bottom surface, the groove at least one face inner substrate, is formed with gold in the groove
Belong to electrode, using as at least one anode；Also there is the groove of at least one face outer substrate, be formed with metal in the groove
Electrode, using as at least one cathode；Vitreum is placed in the upper surface of the first insulating layer, is bonded with anode.
Therefore, because base unit structure of the highly conductive silicon base for periodic arrangement, and its outer substrate face cathode, it is interior
Layer substrate face anode, therefore the highly conductive silicon volume of cathode contact is big, the highly conductive silicon of anode contact is small in size, so that positive
Contact area be much smaller than cathode contact area；And the structure of outer substrate encirclement inner substrate can further increase cavity face
Product, to significantly improve the detection efficiency of radiating particle.
In some embodiments of the invention, it is injected with medium at least one above-mentioned cavity, which includes10B
Nano particle, WO3Nano particle, lead oxide nano particle and/or inert gas.Wherein, can to inject this in same cavity more
Kind nano particle, or different nano particles is injected separately into different cavitys, these different nano particles can be respectively in
The radiation rays effect such as son, α, β, γ and X-ray, the electronics that can not only increase absorptivity, and release can excite snowslide electric
Son, under operating bias voltage, signal amplitude is proportional to the incident intensity of radiant matter, to realize the radiation of a variety of radiation rays
The detection of intensity.
In some embodiments of the invention, above-mentioned radiation ray detection device is MEMS, that is, is based on MEMS skill
Art design and production radiation ray detection device, different from traditional ceramic Geiger counter structure, the radiation of the present embodiment is penetrated
Line detector can be produced in enormous quantities, and consistency of performance is strong, and production is simple, small in size, at low cost.
In some embodiments of the invention, the first insulating layer and/or the main material of second insulating layer include: SiO2、
SiN and/or silicon oxynitride, such as the first insulating layer and/or second insulating layer can be single SiO2Layer or SiN layer, therefore energy
Enough establish good insulation electrically and thermally；It can also simultaneously include a SiO2Layer and a SiN layer, SiN layer are answered for compensating
Power is used as SiO2The stress compensation layer of layer.
In some embodiments of the invention, the surrounding of at least one above-mentioned cavity is surrounded by highly conductive silicon base, and
Through highly conductive silicon base；First insulating layer have at least one with cavity face, groove body through its thickness direction, the slot
Body is connected to the cavity of face, so that the entirety of highly conductive silicon base and the first insulating layer, is rendered as in addition to center and edge,
He is partially at least one hollow periodic structure；One group of electrode of the central area face of single structure in the periodic structure
Anode in slot, the cathode in one group of slot electrode of fringe region face, therefore cavity area can be further increased, to obviously mention
The detection efficiency of high radiating particle.
In some embodiments of the invention, above-mentioned outer substrate is positive hexagonal column, and inner substrate is cylindrical body；But
It is that the present invention is not restricted the shape of outer substrate and inner substrate, as long as outer substrate surrounds inner substrate, and can
Guarantee that the volume of the highly conductive silicon of anode contact is much smaller than the highly conductive silicon base of cathode contact；Preferably, two adjacent bases
The outer substrate of bill kept on file member is tangent, the more multiple-unit of radiation ray detection device is formed, to subtract on constant substrate plate
Gadget volume and manufacturing cost.
In some embodiments of the invention, highly conductive silicon base includes the base unit of multiple periodic arrangements, to have
There are a plurality of cavities, so that different nano particles can be injected in different cavitys, different high energy are penetrated with increasing in device work
The detecting and selecting property of line particle, and improve detection accuracy；Meanwhile can also be injected in the same cavity there are many nano particle,
It can judge the type of incoming particle by waveform and intensity while measuring high-energy ray radiation intensity in this way.
In some embodiments of the invention, at least one above-mentioned cathode is multiple, is electrically connected between multiple cathode；
And/or at least one is just extremely multiple, is electrically connected between multiple anodes.
In some embodiments of the invention, on the surface of second insulating layer, there are also contact conductors；The contact conductor with extremely
A few anode and/or at least one cathode are electrically connected；To pass through (such as the high-pass filtering of the contact conductor and external equipment
Device) connection, the intensity of radiation ray is obtained with detection.And pass through the contact conductor, it can be achieved that between multiple anodes and/or multiple
Electric connection between cathode.
In some embodiments of the invention, above-mentioned radiation ray detection device, is connected to by high-pass filtering circuit
Oscillograph, testing result to be presented in real time.
Therefore, the present invention is proposed based on MEMS technology production and the radiation ray detection device encapsulated and preparation method thereof,
It is classified into several points to be stated: the manufacture craft of radiation ray detection device；For different detection substances, radiation ray detection
The selection and effect of background gas and filler used in device；And the realization of the system of radiation ray detection device:
1, general to say, the preparation method of radiation ray detection device the following steps are included:
The first insulating layer and second insulating layer are respectively formed in the upper and lower surfaces of highly conductive silicon base；Remove partial region
Second insulating layer, form at least two grooves for running through its thickness direction, deposited metal at least two groove is formed extremely
A few anode and at least one cathode, and in the lower surface of second insulating layer close to the area deposition metal of groove, as just/
The contact conductor of cathode；The first insulating layer of graphical etching and highly conductive silicon base, so that highly conductive silicon base forms period row
At least one base unit of column, each base unit include: inner substrate, outer substrate and by the inner substrate and outer layer
The cavity that substrate surrounds；And the inner substrate face at least one anode, at least one cathode of outer substrate face；At least one
The side wall deposition metal layer of a cavity；And it injects and includes10B nano particle, WO3Nano particle, lead oxide nano particle and/or lazy
The medium of property gas；Vitreum is placed in the upper surface of the first insulating layer, and is bonded at least one anode.
2, the filler that radiation detection uses in radiation ray detection device
Different radiating particles need to discharge after being interacted using different media material and background gas with particle
Electronics is for detecting out.Radiating particle is introduced separately below.
Neutron detection: neutron is unable to direct ionization background gas.It is used in common neutron detection10B nano material with
Neutron carries out nuclear reaction and generates α particle.And10B has biggish area of section, and it is higher to absorb neutron efficiency.α particle has very short
Penetration range, the electronics that generation is detected after background gas can be ionized.
β detection of particles: β particle can ionize background gas and release electronics, and electronics can be directly detected.But by
It is long in the penetration range of β particle, it cannot be absorbed completely in micro detecting device, influence detection efficiency.The present invention uses WO3
Nano particle carries out the absorption to β particle.The electronics released can snowslide excitation more polyelectron near anode.β particle in this way
Detection efficiency is higher.
α detection of particles: α particle is heavier band point particle (hydrogen nuclei), can use inert gas such as He, Ne directly with
Effect generate detectable electronics.Equally, the electronics released meeting snowslide near anode excites more polyelectron, in favor of inspection
It surveys.
γ and X-ray detection: the present invention selects lead oxide nano particle as media material.Incident γ and X-ray with
Lead oxide can launch electronics after generating Compton scattering, and the electronics released in background gas can snowslide near anode
More polyelectron is excited, in favor of detection.
The media material of selection can realize medium with being bonded for silicon wafer by glass by selective deposition on glass
The sealing of nano-substance and gas.
Therefore, when injection is there are many nano particle in cavity, if being injected in cavity10B nano particle is as neutron detection
Device, neutron with10The effect of B nano particle generates alpha ray and is captured by cathode；Injection such as WO in cavity3Nano particle is as β
Ray detecting apparatus, WO3Nano particle can be absorbed β particle and release more polyelectron and be captured by anode；It is infused in cavity
Enter if lead oxide nano particle is as γ and x-ray detection device, γ and X-ray and changes the effect of lead nano particle and release photoelectricity
Son is captured by anode.
Therefore, different nano particles is injected in device cavity to increase in device work to different high-energy ray particles
Detecting and selecting property, incoming particle can be judged by waveform and intensity while measuring high-energy ray radiation intensity in this way
Type.
3, the system principle of radiation ray detection device
Gas zones near cathode are drift regions, and the region near anode is high strength field magnification region.Particle enters
Drift region ionized gas, the ion ionized out are accelerated to the snowslide section of amplification region.Design drift region size should be much larger than
Amplification region.Positive contact area is only the small size area of inner substrate in the preparation method of radiation ray detection device above-mentioned
Domain, and negative regions include side wall and the ground of entire outer substrate, cathode contact area is greater than positive 100 times of contact area
More than, to improve the detection efficiency of radiating particle.According to the voltage magnitude point applied on the electrode, there are four areas for electron discharge
Domain is respectively as follows: low-voltage saturation region, linear zone, the linear zone of limitation and Geiger-Miller region.Device should work in linearly interval
It is interior, anode, which can be accelerated to, in the electronics that drift region generates generates avalanche electrons, the electron amount of this part and incoming particle
Energy is proportional.And the electron amount detected in other working region is affected by other factors, the pass with incoming particle
It is unobvious.
The bias direct current voltage of usual device work is in 500-1000V.The preparation method of device proposed by the present invention is with dry
Method oxidizing process generates fine and close SiO2As insulating layer, its breakdown field strength is in 10.8-11.6MV/cm, if it is assumed that absolutely
Edge layer with a thickness of 2 μm, then the breakdown voltage of device be 2160-2320V.In addition SiN film layer also breakdown with higher
Voltage.It can be seen that the device can be with trouble free service in the bias voltage section of needs.As shown in Figure 1, bias voltage VdcIt needs to connect one
Then a high resistance accesses the RC high-pass filter of rear end, anode, which receives electronics, after radiating particle enters counter puts C
Electricity can detecte out a pulse signal on oscillograph.
It should be noted that above-mentioned radiation ray detection device can only be used as a unit, then detection device system by
Multiple unit composition, and being drawn after all anode connections, it is drawn after all cathode connections, using method system of the invention
Standby detection device, the limiting factor by process equipment is small, easy to process.The different units of radiation ray detection device can be injected with
Different media material, to realize the detection of a variety of radiation rays.
Radiation ray detection device proposed by the present invention and preparation method thereof is carried out detailed below by way of specific embodiment
Thin description.
Embodiment
The present embodiment proposes a kind of radiation ray detection device, herein as shown in Fig. 2, with the oblique right of structure as shown in Figure 6
It is illustrated for the section at angle, comprising: highly conductive silicon base 1 in the inner substrate 10 of cylindrical body, surrounds the inner substrate
10, the cavity 12 formed, the sky are surrounded in the outer substrate 11 of regular hexagon theme and by inner substrate 10 and outer substrate 11
The partial sidewall of chamber 12 is formed with metal layer 13；First insulating layer 2 and second insulating layer 3, are respectively formed in highly conductive silicon base
Upper and lower surfaces；Above-mentioned second insulating layer 3 is by SiO2Layer 30 and SiN layer 31 are constituted, which has and outer layer base
11 face of bottom, slot electrode 32 through 3 thickness direction of second insulating layer, and with 10 face of inner substrate, absolutely through second
The slot electrode 33 of 3 thickness direction of edge layer is formed with metal electrode, the metal electrode in slot electrode 33 in those slot electrodes 32,33
As anode 35, the metal electrode in slot electrode 32 is as cathode 34；By in second insulating layer between plurality of positive 35
Metal wire 37 connect, cathode 34 is connected with metal wire 36；And vitreum 4, it is placed in the upper surface of the first insulating layer 2, and just
Pole 35 is bonded；It is injected with medium in cavity 12, which includes10B nano particle, WO3Nano particle, lead oxide nanometer
Grain and/or inert gas.
Above-mentioned cavity 12 runs through highly conductive silicon base 1, and the first insulating layer 2 runs through first absolutely with corresponding with cavity 12
The groove body of edge layer, groove body are connected to form empty slot with cavity 12, so that highly conductive silicon base and being integrally formed for the first insulating layer are removed
Outside center and edge, other parts are hollow periodic structure；The central area face anode 33 of the periodic structure, edge
Region corresponds to cathode 32, and 12 surrounding of cavity is surrounded by highly conductive silicon base.
The present embodiment makes cavity by the way of dry method deep etching, and hollow positive six Bian Xingzhu is formed by deep silicon etching
Body structure.The center of hexagon column structure is the silicon column etched, as anode；The frame of hexagon column structure is device
The cathode of part.It is hollow structure between anode and cathode.Substrate using twin polishing highly conductive N-shaped or p-type silicon chip.
Multiple hexagon column structures can connect into honeycomb, and the area that such cavity accounts for device is bigger, increase radiating particle
With the response area of inert gas, signal output is increased.The specific preparation flow of the radiation ray detection device of the present embodiment
As shown in Fig. 3 (a) to Fig. 3 (e), for convenience, by taking sectional view as an example, preparation flow specifically includes following preparation flow figure
Step:
Step 1, the silicon wafer using highly conductive N-shaped or p-type, resistivity in 0.001-0.01 Ω/cm add as substrate
Work material.As shown in Fig. 3 (a), dry oxidation is carried out to silicon wafer first, fine and close oxide layer is generated, with a thickness of 2-4 μm of oxidation
Layer, then by low-pressure chemical vapor deposition technology (LPCVD) or plasma reinforced chemical vapour deposition (PECVD) in silicon wafer
Upper and lower surfaces deposit layer of silicon dioxide SiO2, to establish good insulating layer electrically and thermally；Simultaneously also in the SiO of lower surface2
Lower surface deposits layer of sin, as the stress compensation layer of underlying silica, with a thickness of 0.1-1 μm；
Shown in step 2, such as Fig. 3 (b), next, using the mask plate as shown in Fig. 4 (a) by photoetching technique in silicon wafer
Lower surface expose cathode contact (two squares in Fig. 4 (a)) and anode opening (the circle battle array of amplifier section in Fig. 4 (a)
Column), then etch away SiN layer and SiO2Layer, exposes highly conductive silicon；
Shown in step 3, such as Fig. 3 (c), physical vapour deposition (PVD) metal and use such as figure at the anode openings of silicon wafer lower surface
Mask pattern shown in 4 (b) is to form lead and contact；
Step 4, using the mask plate as shown in Fig. 4 (c) to the SiO of silicon wafer and its upper surface2Layer carries out photolithography patterning,
Cavity, which is opened, with dry method deep silicon etching method (DRIE) later forms honeycomb.Etching can be automatically stopped silicon wafer lower surface
Oxide layer, etch thicknesses are the SiO of silicon wafer thickness and upper surface2Thickness degree forms the structure as shown in Fig. 3 (d)；
Shown in step 5, such as Fig. 3 (e), the electroless deposition of metal 13, deposition gold are carried out after graphical certain area to cavity
Belonging to be common metal such as Au, Cu, Ni, Ti etc., and metal is only deposited on the side wall of cavity；
Step 6 finally with vitreum and device carries out anode linkage encapsulation, obtains structure as shown in Figure 2.Anode linkage
Process can be carried out in the inert gas space of He or Ne.
It as shown in Figure 5 and Figure 6, is honeycomb radiation ray survey meter made of the preparation method based on the present embodiment
Front and back sides.Therefore, for the device size of the present embodiment in 1cm or so, backside structure is that lead and hard contact are (positive, negative
Pole).Overleaf metal grill connects the cylindrical type anode of each front honeycomb in structure, these metal grills are connected to one
On a anode electrode contact；In addition, entire underlying structure is the structure that positive hexagonal column is connected, cathode is formed, therefore, in device
The part back side passes through SiN/SiO2Etching and metal patternization after, form negative electrode contact.Positive honeycomb is used for
Increase cavity area, improves the absorptivity of radiating particle.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of radiation ray detection device, comprising:
Highly conductive silicon base comprising: at least one base unit of periodic arrangement, each base unit include: inner substrate,
The cavity for surrounding the outer substrate of the inner substrate and being surrounded by the inner substrate and outer substrate, at least one described sky
Medium is injected in chamber；
First insulating layer, is placed in the highly conductive silicon base upper surface, and structure is corresponding with the highly conductive silicon base；
Second insulating layer is placed in the highly conductive silicon substrate bottom surface, with the recessed of inner substrate described at least one face
Slot is formed with metal electrode in the groove, using as at least one anode；Also with outer substrate described at least one face
Groove is formed with metal electrode in the groove, using as at least one cathode；
Vitreum is placed in the upper surface of first insulating layer, is bonded with the anode.
2. radiation ray detection device according to claim 1, in which:
The medium includes10B nano particle, WO3Nano particle, lead oxide nano particle and/or inert gas.
3. radiation ray detection device according to claim 1, is MEMS；First insulating layer and/or
The main material of second insulating layer includes: SiO2, SiN and/or silicon oxynitride.
4. radiation ray detection device according to claim 1, in which:
Side wall that the cavity is bonded with the outer substrate and/or the side wall being bonded with the inner substrate are formed with metal
Layer.
5. radiation ray detection device according to claim 1, wherein the outer substrate is positive hexagonal column, institute
Stating inner substrate is cylindrical body.
6. radiation ray detection device according to claim 1, in which:
At least one described cathode be it is multiple, be electrically connected between multiple cathode；And/or
Described at least one is just extremely multiple, is electrically connected between multiple anodes；And/or
On the surface of the second insulating layer, there are also contact conductors；The contact conductor and it is described at least one anode and/or at least
One cathode is electrically connected.
7. radiation ray detection device according to any one of claim 1 to 6, is connected to by high-pass filtering circuit
Oscillograph, testing result to be presented in real time.
8. a kind of preparation method of radiation ray detection device, comprising the following steps:
Step 1 is respectively formed the first insulating layer and second insulating layer in the upper and lower surfaces of highly conductive silicon base；
Step 2, the second insulating layer for removing partial region, to form at least two grooves for running through its thickness direction；And to extremely
Deposited metal in few two grooves, to form at least one anode and at least one cathode；
Step 3 graphically etches first insulating layer and highly conductive silicon base, so that the highly conductive silicon base forms the period
At least one base unit of arrangement, each base unit include: inner substrate, surround the inner substrate outer substrate and
The cavity surrounded by the inner substrate and outer substrate, medium is injected into cavity described at least one；And the internal layer base
At least one is positive described in the face of bottom, at least one cathode described in outer substrate face；
Step 4, the upper surface that vitreum is placed in first insulating layer, and be bonded with the anode.
9. the preparation method of radiation ray detection device according to claim 8, further comprising the steps of:
To the side wall deposition metal layer of cavity described at least one；And it injects and includes10B nano particle, WO3Nano particle, oxidation
The medium of lead nano particle and/or inert gas.
10. the preparation method of radiation ray detection device according to any one of claim 8 to 9, in which:
It is further comprising the steps of in the deposited metal at least two groove:
The lower surface of the second insulating layer close at least two groove area deposition metal as contact conductor, with
It is electrically connected at least one described anode and/or at least one cathode；And/or
It is further comprising the steps of between the step 3 and step 4:
In at least one side wall deposition metal layer of at least one cavity.
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| JP2005315755A (en) * | 2004-04-30 | 2005-11-10 | Nec Tokin Corp | Temperature detector, thermal infrared-ray detector, and manufacturing method therefor |
| CN104576432A (en) * | 2013-10-16 | 2015-04-29 | 三星电子株式会社 | X-ray system, semiconductor package, and tray having x-ray absorption filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005315755A (en) * | 2004-04-30 | 2005-11-10 | Nec Tokin Corp | Temperature detector, thermal infrared-ray detector, and manufacturing method therefor |
| CN104576432A (en) * | 2013-10-16 | 2015-04-29 | 三星电子株式会社 | X-ray system, semiconductor package, and tray having x-ray absorption filter |
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| "新型三维沟槽电极硅探测器电荷收集性能的研究";丁浩;《中国优秀硕士学位论文全文数据库工程科技Ⅱ辑》;20160415(第4期);参见第5-6、27-29、35-41页，图1.7、3.9、4.1-4.8 * |
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