CN105845825B - A kind of organic friction field-effect transistor, transistor array and preparation method thereof - Google Patents
A kind of organic friction field-effect transistor, transistor array and preparation method thereof Download PDFInfo
- Publication number
- CN105845825B CN105845825B CN201610182471.8A CN201610182471A CN105845825B CN 105845825 B CN105845825 B CN 105845825B CN 201610182471 A CN201610182471 A CN 201610182471A CN 105845825 B CN105845825 B CN 105845825B
- Authority
- CN
- China
- Prior art keywords
- layer
- organic
- insulating layer
- frictional
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000033001 locomotion Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 5
- KHESEVVLJIFTFE-UHFFFAOYSA-N CN(C1=CC=C2C=C(C(=NC2=C1)N)C1=CN(C2=CC=CC=C12)C)C Chemical compound CN(C1=CC=C2C=C(C(=NC2=C1)N)C1=CN(C2=CC=CC=C12)C)C KHESEVVLJIFTFE-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 abstract description 6
- 238000005421 electrostatic potential Methods 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 155
- 239000010408 film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- SEPPVOUBHWNCAW-FNORWQNLSA-N (E)-4-oxonon-2-enal Chemical compound CCCCCC(=O)\C=C\C=O SEPPVOUBHWNCAW-FNORWQNLSA-N 0.000 description 1
- LLBZPESJRQGYMB-UHFFFAOYSA-N 4-one Natural products O1C(C(=O)CC)CC(C)C11C2(C)CCC(C3(C)C(C(C)(CO)C(OC4C(C(O)C(O)C(COC5C(C(O)C(O)CO5)OC5C(C(OC6C(C(O)C(O)C(CO)O6)O)C(O)C(CO)O5)OC5C(C(O)C(O)C(C)O5)O)O4)O)CC3)CC3)=C3C2(C)CC1 LLBZPESJRQGYMB-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000009510 drug design Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/04—Friction generators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
A kind of organic friction field-effect transistor of the present invention, including first substrate, source-drain electrode layer and the organic semiconductor layer being cascading on the first substrate；Further include the first insulating layer being set up directly on the organic semiconductor layer, and the first frictional layer above first insulating layer is set, first insulating layer can form vertical interval varying motion with first frictional layer；First electrode layer is also provided directly on first frictional layer, the first electrode layer is electrically connected with the source electrode in the source-drain electrode layer.Replace the grid in conventional transistor using friction generator, electrostatic potential, which is formed, by the contact separation of the first frictional layer and the first insulating layer is used as grid signal, regulate and control carrier transmission characteristics in organic semiconductor layer, to realize the function of organic field effect tube, effectively simplify the integrated of organic field effect tube.
Description
Technical field
The present invention relates to optoelectronic areas and flexible electronic devices fields, and in particular to a kind of infrared-sensitive it is organic
Rub field-effect transistor, transistor array and preparation method thereof.
Background technology
Organic film FET is a kind of electronics device regulating and controlling conducting channel carriers concentration by grid voltage
Part.According to the function of electrode, organic film FET includes three source electrode, drain electrode and grid electrodes.Traditional
Organic film FET had both needed to apply applied voltage at source, drain electrode, it is also desirable to apply to grid and source electrode
Voltage.The introducing of two applied voltages makes the integrated inconvenience of organic film FET, the especially arrangement of electrode
Be not as simple to operation as diode.
Friction generator was risen at the beginning of 21 century, and principle is：It is carried out using two materials with different electronegativity
Friction or contact separation, to generate separation of charge and form potential difference.It is defeated as the electric energy of generator using two electrodes
Outlet can flow through external circuit shape in Surface Creation charge inducing, charge inducing by electrostatic induction under friction potential driving
At electric current.The development of friction generator, can be as the power source of micro-nano device and as the active pressure sensing of self energizing
Device.Rational design is allowed to be applied to organic film FET, by effective collection for solving organic film FET
At inconvenient problem, there are huge commercial and practical potentiality.
Invention content
For this purpose, the technology of the integrated inconvenience to be solved by this invention for being existing organic film FET is asked
Topic provides a kind of organic friction field-effect transistor being advantageously integrated, fet array and preparation method thereof.
In order to solve the above technical problems, the technical solution adopted by the present invention is as follows：
A kind of organic friction field-effect transistor of the present invention, including first substrate, are cascading first
Source-drain electrode layer on substrate and organic semiconductor layer；
Further include the first insulating layer being set up directly on the organic semiconductor layer, and setting is in first insulation
First frictional layer of layer top, first insulating layer can form vertical interval varying motion with first frictional layer；
First electrode layer, the first electrode layer and the source-drain electrode layer are also provided directly on first frictional layer
In source electrode electrical connection.
First insulating layer is different from the electronegativity of the first frictional layer.
Preferably, first insulating layer is identical as the first frictional layer area.
The organic semiconductor layer includes the organic semiconducting materials for being more than 620nm light sensitives to wavelength.
Preferably, the organic semiconducting materials are structure shown in formula (ISQ1)-formula (ISQ 3)：
Preferably, first thickness of insulating layer is 300nm~1 μm, and first friction layer thickness is 50 μm~200 μ
m；First insulating layer is organic material layer.
A kind of preparation method of organic friction field-effect transistor of the present invention, includes the following steps：
Source-drain electrode layer is formed on the first substrate；
Organic semiconductor layer and the first insulating layer are formed on source-drain electrode layer；
Form the first frictional layer；
Form first electrode layer；
First frictional layer is arranged on first insulating layer.
Preferably, the organic semiconductor layer is prepared by vacuum evaporation process or prepared by solwution method.
A kind of organic friction fet array of the present invention, including substrate, are disposed in parallel in first substrate
On several organic semiconductor units, each organic semiconductor unit includes the source and drain electricity being stacked on the first substrate
Pole layer and semiconductor layer；
Further include the continuous second insulating layer being set up directly on each semiconductor unit, and setting is described the
The second frictional layer above two insulating layers, the second insulating layer can form vertical interval variation with second frictional layer and transport
It is dynamic；
The second electrode lay, the second electrode lay and each source-drain electrode are also provided directly on second frictional layer
Source electrode electrical connection in layer.
A kind of preparation method of organic friction field-effect transistor of the present invention, includes the following steps：
Several organic semiconductor units are formed on the first substrate, and the organic semiconductor unit includes being sequentially stacked in base
Source-drain electrode layer on plate and organic semiconductor layer；
Second insulating layer is formed on the semiconductor unit；
Form the second frictional layer；
Form the second electrode lay；
Second frictional layer is arranged in the second insulating layer.
The above technical solution of the present invention has the following advantages over the prior art：
1, a kind of organic friction field-effect transistor described in the embodiment of the present invention, including first substrate, stack gradually and set
Set source-drain electrode layer and organic semiconductor layer on the first substrate；Further include being set up directly on the organic semiconductor layer
First insulating layer, and the first frictional layer above first insulating layer is set, first insulating layer and described first
Frictional layer can form vertical interval varying motion；Also it is provided directly with first electrode layer on first frictional layer, described
One electrode layer is electrically connected with the source electrode in the source-drain electrode layer.Replace the grid in conventional transistor pipe using friction generator
Pole forms electrostatic potential by the contact separation of the first frictional layer and the first insulating layer and is used as grid signal, regulates and controls in semiconductor layer
Carrier transmission characteristics, to realize the function of organic friction field-effect transistor.The present invention can convert mechanical energy into electricity
Can, realize the function of human-computer interaction.And by self-powered mode reduce grid in conventional field effect transistor with
Additional power source between source electrode effectively simplifies the integrated of field-effect transistor.
In addition, Grazing condition material preparation can be used in a kind of organic friction field-effect transistor, realize that device is flexible
Change.
2, a kind of organic friction field-effect transistor described in the embodiment of the present invention, first insulating layer and described first
Frictional layer area is identical, is conducive to the formation of electrostatic field.
3, a kind of organic friction field-effect transistor described in the embodiment of the present invention, the organic semiconductor layer includes to wave
Infrared night viewing function may be implemented in the long organic semiconducting materials more than 620nm light sensitives.
4, the preparation method of a kind of organic friction field-effect transistor described in the embodiment of the present invention, it is simple for process, it prepares
It is at low cost.
5, a kind of organic friction fet array described in the embodiment of the present invention is replaced using friction generator and is passed
The grid united in transistor, can real field-effect tube be densely integrated, not only integrated level is high, and simple in structure.
6, the preparation method of a kind of organic friction fet array described in the embodiment of the present invention, it is simple for process,
Manufacturing cost is low.
Description of the drawings
Fig. 1 is the structural schematic diagram of organic friction field-effect transistor described in embodiment 1；
Fig. 2 is the fundamental diagram of organic friction field-effect transistor described in embodiment 1；
Fig. 3 is the structural schematic diagram of organic friction fet array described in embodiment 1；
Reference numeral is expressed as in figure：1- first substrates, 21- drain electrodes, 22- source electrodes, 3- organic semiconductor layers, 4-
One insulating layer, the first frictional layers of 5-, 6- first electrode layers, 7- organic semiconductors unit, 8- second insulating layers, 9- second rub
Layer, 10- the second electrode lays.
Specific implementation mode
It, below will be to specific implementation mode and its required in order to illustrate more clearly of the purpose of the present invention and technical solution
The attached drawing used is clearly and completely described.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.
On the contrary, providing these embodiments so that the disclosure will be thorough and complete, and the design of the present invention will be fully conveyed to
Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, the areas Ceng He can be exaggerated
The size and relative size in domain.It should be understood that when element such as layer, region or substrate are referred to as " being formed in " or " setting
" another element "upper" when, which can be arranged directly on another element, or there may also be intermediary elements.
On the contrary, when element is referred to as on " being formed directly into " or " being set up directly on " another element, intermediary element is not present.
Embodiment 1
The present embodiment provides a kind of organic friction field-effect transistors, as shown in Figure 1, including first substrate 1, stack gradually
Source-drain electrode layer on first substrate 1 and organic semiconductor layer 3 are set；Source-drain electrode layer include juxtaposition on first substrate 1
Source electrode 22 and drain electrode 21.
First substrate 1 is selected from but not limited to rigid substrates and flexible base board, as an embodiment of the present invention, this implementation
First substrate 1 is the glass substrate of rigidity in example.Described organic to rub it is worth noting that, if first substrate 1 is flexible base board
Flexible device can be realized by wiping field-effect transistor.As the convertible embodiment of the present invention, first substrate 1 can also be other bases
The purpose of the present invention may be implemented in plate, belongs to the scope of protection of the present invention.
Source-drain electrode layer is selected from but not limited to the conductive material layer after arbitrary graphic pattern, such as ITO, Au, graphite material, makees
For one embodiment of the present of invention, source-drain electrode layer is the ITO layer after case in the present embodiment.
Organic semiconductor layer 3 includes the organic semiconducting materials for being more than 620nm light sensitives to wavelength, be may be implemented infrared
Night vision function.As an embodiment of the present invention, in the present embodiment, organic semiconducting materials are formula (ISQ1)-formula (ISQ
3) one kind in structure shown in：
Organic friction field-effect transistor further includes the first insulating layer 4 being set up directly on organic semiconductor layer 3,
And the first frictional layer 5 being arranged above the first insulating layer 4, the first insulating layer 4 and the first frictional layer 5 can be formed it is vertical between
Away from varying motion.
First insulating layer 4 is different from the electronegativity of the first frictional layer 5.The first electricity is also provided directly on first frictional layer 5
Pole layer 6, first electrode layer 6 is electrically connected with the source electrode 22 in source-drain electrode layer.
First insulating layer 4 is identical as 5 area of the first frictional layer.First thickness of insulating layer 4 is 300nm~1 μm, the first friction
5 thickness of layer are 50 μm~200 μm；
As an embodiment of the present invention, the first insulating layer 4 is organic material layer PMMA in the present embodiment, and thickness is
500nm；First frictional layer 5 is layer of PVC, and thickness is 100 μm.
As shown in Fig. 2 (a), first electrode layer 6 is connect with source electrode 22, is connected between drain electrode 21 and source electrode 22 additional
Power supply, source electrode 22 are grounded.At this point, the first insulating layer 4 is not polarized, there is no electric current to be formed in semiconductor layer 3.Hanging shape
State corresponds to traditional p-type organic film FET VG=0 state.As shown in Fig. 2 (b), under external force F effects, first
Insulating layer 4 and the first frictional layer 5 are in close contact, and generate electrostatic potential so that the first insulating layer 4 contacted with the first frictional layer 5 that
Positively charged on one side, the side that the first insulating layer 4 is contacted with semiconductor layer 3 is negatively charged.Then it is generated in induced semiconductor layer 3 empty
Cave.The application of source-drain voltage makes hole directed movement, to form source-drain current ID.It is organic that this process is equivalent to traditional p-type
The V of thin film field effect transistorG<0 state, i.e. enhancement mode.
That is, forming electrostatic potential by the contact separation of the first frictional layer 5 and the first insulating layer 4 is used as grid signal, regulation and control
Carrier transmission characteristics in semiconductor layer, to realize the function of field-effect transistor.Organic friction field described in the present embodiment
Effect transistor can convert mechanical energy into electric energy, realize the function of human-computer interaction.And subtracted by self-powered mode
Lack the grid in conventional field effect transistor and the additional power source between source electrode, effectively simplifies the integrated of effect transistor.
The preparation method of organic friction field-effect transistor, includes the following steps：
S1, source-drain electrode layer is formed by sputtering technology, etching technics on first substrate 1；
S2, by vacuum evaporation process prepare or solwution method, organic semiconductor layer 3 is formed on source-drain electrode layer；It is logical
It crosses spin coating process and forms the first insulating layer 4；
S3, the first stacked frictional layer 5 and first electrode layer 6 are formed on second substrate；
S4, the first frictional layer 5 is arranged on the first insulating layer 4.
As the convertible embodiment of the present invention, in step S3, the first frictional layer 5 and first electrode layer 6 can be from second
It removes, then is arranged on the first insulating layer 4 on substrate；The purpose of the present invention may be implemented, belong to the scope of protection of the present invention.
As the convertible embodiment of the present invention, source-drain electrode layer, organic semiconductor layer 3, the first insulating layer 4, first rub
The preparation method for wiping layer 5 and first electrode layer 6 is without being limited thereto, and technique made from arbitrary energy or method can be real in the prior art
The existing purpose of the present invention, belongs to the scope of protection of the present invention.
Embodiment 2
The present embodiment provides a kind of organic friction fet arrays, as shown in figure 3, including first substrate 1, side by side
Several organic semiconductor units 7 on first substrate 1 are set, and each organic semiconductor unit 7 includes being stacked first
Source-drain electrode layer on substrate 1 and organic semiconductor layer 3.
Organic friction fet array further include be set up directly on it is continuous on each organic semiconductor unit 7
Second insulating layer 8, and the second frictional layer 9 for being arranged above second insulating layer 8, second insulating layer 8 and the second frictional layer 9
Vertical interval varying motion can be formed.
Also be provided directly with the second electrode lay 10 on second frictional layer 9, the second electrode lay 10 in each source-drain electrode layer
Source electrode 22 is electrically connected.
In organic friction fet array, second insulating layer 8 covers all between organic semiconductor unit 7
Gap.One side generates carrier as insulating layer material induction organic semiconductor layer 3, is on the other hand partly led as individually organic
The separation layer of 7 adjacent sources of body unit, drain electrode.
Second insulating layer 8 is also used as the protective layer of organic semiconductor layer 3, prevents water and oxygen to organic semiconductor layer
3 erosion.Since the area of organic friction fet array is big compared with the area of individual devices, the second insulation
The area of layer 8 is larger.So that the contact area bigger of second insulating layer 8 and the second frictional layer 9, frictional electricity process are more held
Easily realize.
The preparation method of organic friction fet array, includes the following steps：
S1, several organic semiconductor units 7 are formed on first substrate 1, organic semiconductor unit 7 includes being sequentially stacked
Source-drain electrode layer on first substrate 1 and organic semiconductor layer 3；
S2, second insulating layer 8 is formed on organic semiconductor unit 7；
S3, the second frictional layer 9 and the second electrode lay 10 are formed on second substrate；
S4, the second frictional layer 9 is arranged in second insulating layer 8.
As the convertible embodiment of the present invention, in step S3, the first frictional layer 5 and first electrode layer 6 can be from second
It removes, then is arranged on the first insulating layer 4 on substrate；The purpose of the present invention may be implemented, belong to the scope of protection of the present invention.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (10)
1. a kind of organic friction field-effect transistor, including first substrate, the source and drain electricity being cascading on the first substrate
Pole layer and organic semiconductor layer；It is characterized in that, further include the first insulating layer being set up directly on the organic semiconductor layer,
And the first frictional layer above first insulating layer is set, first insulating layer being capable of shape with first frictional layer
At vertical interval varying motion；
Also be provided directly with first electrode layer on first frictional layer, the first electrode layer in the source-drain electrode layer
Source electrode is electrically connected.
2. organic friction field-effect transistor according to claim 1, which is characterized in that first insulating layer with it is described
The electronegativity of first frictional layer is different.
3. organic friction field-effect transistor according to claim 1, which is characterized in that first insulating layer with it is described
First frictional layer area is identical.
4. organic friction field-effect transistor according to claim 1, which is characterized in that the organic semiconductor layer includes
It is more than the organic semiconducting materials of 620nm light sensitives to wavelength.
5. organic friction field-effect transistor according to claim 4, which is characterized in that the organic semiconducting materials are
Structure shown in formula (ISQ1)-formula (ISQ 3)：
ISQ1
ISQ2
ISQ3
6. according to the organic friction field-effect transistor of claim 1-5 any one of them, which is characterized in that first insulation
Layer thickness is 300nm~1 μm, and first friction layer thickness is 50 μm~200 μm；First insulating layer is organic material
Layer.
7. a kind of preparation method of the organic friction field-effect transistor of claim 1-6 any one of them, which is characterized in that packet
Include following steps：
Source-drain electrode layer is formed on the first substrate；
Organic semiconductor layer and the first insulating layer are formed on source-drain electrode layer；
Form the first frictional layer；
Form first electrode layer；
First frictional layer is arranged on first insulating layer.
8. the preparation method of organic friction field-effect transistor according to claim 7, which is characterized in that described organic half
Conductor layer is prepared by vacuum evaporation process or prepared by solwution method.
9. a kind of organic friction fet array, it is characterised in that：Including substrate, it is set up in parallel on the first substrate
Several organic semiconductor units, each organic semiconductor unit includes the source-drain electrode layer being stacked on the first substrate
And semiconductor layer；
Further include the continuous second insulating layer being set up directly on each semiconductor unit, and setting is exhausted described second
The second frictional layer above edge layer, the second insulating layer can form vertical interval varying motion with second frictional layer；
Also be provided directly with the second electrode lay on second frictional layer, the second electrode lay in each source-drain electrode layer
Source electrode electrical connection.
10. a kind of preparation method of organic friction fet array described in claim 9, which is characterized in that including
Following steps：
Several organic semiconductor units are formed on the first substrate, and the organic semiconductor unit includes being sequentially stacked on substrate
Source-drain electrode layer and organic semiconductor layer；
Second insulating layer is formed on the semiconductor unit；
Form the second frictional layer；
Form the second electrode lay；
Second frictional layer is arranged in the second insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610182471.8A CN105845825B (en) | 2016-03-28 | 2016-03-28 | A kind of organic friction field-effect transistor, transistor array and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610182471.8A CN105845825B (en) | 2016-03-28 | 2016-03-28 | A kind of organic friction field-effect transistor, transistor array and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105845825A CN105845825A (en) | 2016-08-10 |
| CN105845825B true CN105845825B (en) | 2018-10-02 |
Family
ID=56583902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610182471.8A Active CN105845825B (en) | 2016-03-28 | 2016-03-28 | A kind of organic friction field-effect transistor, transistor array and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105845825B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106608612B (en) * | 2016-10-13 | 2018-08-10 | 北京纳米能源与系统研究所 | Active touch sensor |
| CN110364621B (en) * | 2018-04-11 | 2023-12-01 | 清华大学 | Touch storage electronic device and electronic equipment |
| CN109830598A (en) * | 2019-02-18 | 2019-05-31 | 福州大学 | The preparation method and tactile of self-powered multi-gate artificial synapse transistor learn |
| CN114005876B (en) * | 2021-10-19 | 2024-04-26 | 北京纳米能源与系统研究所 | Bipolar transistor and logic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1702877A (en) * | 2003-07-17 | 2005-11-30 | 精工爱普生株式会社 | Thin-film transistor, method of manufacturing thin-film transistor, electronic circuit, display device, and electronic equipment |
| JP2007109798A (en) * | 2005-10-12 | 2007-04-26 | Konica Minolta Holdings Inc | Organic thin-film transistor |
| WO2016023490A1 (en) * | 2014-08-12 | 2016-02-18 | 北京纳米能源与系统研究所 | Back gate field-effect transistor based on friction and contact electrification effects |
-
2016
- 2016-03-28 CN CN201610182471.8A patent/CN105845825B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1702877A (en) * | 2003-07-17 | 2005-11-30 | 精工爱普生株式会社 | Thin-film transistor, method of manufacturing thin-film transistor, electronic circuit, display device, and electronic equipment |
| JP2007109798A (en) * | 2005-10-12 | 2007-04-26 | Konica Minolta Holdings Inc | Organic thin-film transistor |
| WO2016023490A1 (en) * | 2014-08-12 | 2016-02-18 | 北京纳米能源与系统研究所 | Back gate field-effect transistor based on friction and contact electrification effects |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105845825A (en) | 2016-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105845825B (en) | A kind of organic friction field-effect transistor, transistor array and preparation method thereof | |
| US9653674B2 (en) | Contact electrification effect-based back gate field-effect transistor | |
| CN102652330B (en) | Semiconductor device and method for producing same | |
| CN108807546A (en) | Oxide thin film transistor and its manufacturing method | |
| Zhang et al. | Ion gel capacitively coupled tribotronic gating for multiparameter distance sensing | |
| CN104600114B (en) | Rub field effect transistor | |
| CN106612079B (en) | Flexible and transparent friction electron-optical transistor and preparation method thereof | |
| CN102253547B (en) | Array substrate and manufacturing method thereof as well as liquid crystal display | |
| CN104078508B (en) | A kind of grid-control PN junction based on two-dimensional semiconductor crystal | |
| US9070775B2 (en) | Thin film transistor | |
| CN106608612B (en) | Active touch sensor | |
| CN107644878B (en) | Phase inverter and preparation method thereof | |
| CN111192938B (en) | Preparation and modulation method of photoelectric synapse device | |
| WO2021258933A1 (en) | Thin film transistor and preparation method therefor, shift register and gate driving circuit | |
| CN107611172A (en) | A kind of heterogeneous dielectric layer flexibility bottom-gate transistor and preparation method | |
| CN109950235A (en) | A kind of display device of integrating fingerprint identification function and solar cell module | |
| CN109216522A (en) | Miniature LED display panel | |
| CN105336868B (en) | The Organic Light Emitting Diode and driving method of triboelectricity direct drive | |
| WO2014139222A1 (en) | Radio frequency detector and manufacturing method thereof | |
| CN108922904A (en) | A kind of photosensory assembly and preparation method thereof, array substrate, display device | |
| CN208767303U (en) | Thin-film transistor array base-plate and display device | |
| CN106981486A (en) | Low-work voltage phase inverter and preparation method thereof | |
| CN110494911A (en) | Display base plate and its manufacturing method, display panel, display device | |
| CN116033761A (en) | Flexible organic synaptic transistor array and preparation method thereof | |
| CN102779855B (en) | Two schottky junction zinc oxide semiconductor thin film transistor and manufacture method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |