CN105845564A - Photoetching and etching method for preventing shaped wafer surface from etching damage - Google Patents
Photoetching and etching method for preventing shaped wafer surface from etching damage Download PDFInfo
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- CN105845564A CN105845564A CN201610357141.8A CN201610357141A CN105845564A CN 105845564 A CN105845564 A CN 105845564A CN 201610357141 A CN201610357141 A CN 201610357141A CN 105845564 A CN105845564 A CN 105845564A
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- etching
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- crystal column
- column surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
Abstract
The invention provides a photoetching and etching method for preventing shaped wafer surface from etching damage. The method comprises following steps of forming a floating gate layer and a storage unit control gate layer on a substrate in a storage unit region; forming a gate polysilicon layer on the substrate in a periphery region; depositing advanced patterned film on the substrate; forming a gap filling material layer on the advanced patterned film, thus filling the concave and convex parts of the advanced patterned film; carrying out shape planarization on the advanced patterned film by using a planarization back processing technology; depositing anti-reflection coating film; coating photoresist; forming photoresist patterns; and executing etching processing by using the photoresist patterns, thus etching the floating gate layer and the storage unit control gate layer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to one has prevented pattern brilliant
The chemical wet etching method of circular surfaces etching injury.
Background technology
Due to flash memory area and external zones morphogenesis requirement in flash technology, it is commonly stored unit control gate
It is undertaken in two steps with peripheral gates polysilicon process.
In the case of design specification feature sizes is relatively big, conventional lithography process such as KrF can use thick photoresistance side
Case ensures enough photoresistance barrier layers.
But when live width is less than certain specification, need to use liquid immersion lithography scheme, conventional flowsheet is: first
Fill with advanced figure film, then carry out ARC (BARC) and fill, then carry out photoetching work
Skill (liquid immersion lithography scheme photoresistance thickness is the most relatively thin for meeting little Line-width precision requirement).
But, according to this old process as shown in the figure: first carry out grid polycrystalline silicon and process again at control gate
The technique of reason, owing to the peripheral gates polysilicon region formed exists high low head, causes this region to resist
Anti-reflective coating thickness is significantly thinner than memory cell region, is just very easy to occur owing to grid is many in etching process
The etching injury that polysilicon regions advanced figure film barrier is not enough and occurs.
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that Yi Zhongneng
Enough prevent the chemical wet etching method of pattern crystal column surface etching injury.
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that one has prevented pattern crystal column surface from carving
The chemical wet etching method of wound of deteriorating, including:
First step: form floating gate layer and memory cell control gate layer on substrate in memory cell region,
And on substrate, form gate polysilicon layer in outer peripheral areas, on substrate, deposit advanced figureization subsequently thin
Film；
Second step: form gap filling material layer on advanced figure film, to fill advanced figure
The concavo-convex position of film.
Third step: use and planarize back process technique by the planarizing of advanced figure film morphology；
4th step: deposit anti-reflective coating layer film；
5th step: coat photoresist and form photoetching agent pattern；
6th step: utilize photoetching agent pattern to perform etching processing to floating gate layer and memory cell control gate
Pole layer performs etching.
Preferably, double-deck advanced figure thin-film technique deposit advanced figure film is utilized in the first step.
Preferably, substrate is silicon substrate.
Preferably, in the first step, the advanced figure film surface of deposit is formed with concavo-convex position.
Preferably, in the first step, when etching according to control gate, the consumption of advanced figure film calculates
Go out the minimum thickness of advanced figure film.
Preferably, the etching technics etching gap filling material planarizing back process process selection of third step
Speed less than etching advanced figure film speed.
Preferably, in the 5th step, photoetching agent pattern covers the gate polysilicon layer formed in outer peripheral areas.
Preferably, in the 6th step, do not etch the gate polysilicon layer formed in outer peripheral areas.
Preferably, the mobility of gap filling material is more than the mobility of advanced figure film.
Preferably, the physical property of gap filling material is similar to the physical property of advanced figure film.
In the present invention, by gap filling material, crystal column surface pattern is filled smooth, then carry out smooth
Change back process technique to planarize to realize advanced figure film surface, then carry out photoetching and etching technics, from
And solve the etching injury that crystal column surface figure causes due to high low head.
Additionally, in the present invention, owing to there is sufficiently thick advanced figure film gate polysilicon region and resists
Reflectance coating, just has enough barrier layer protected firmly gate polysilicon region when of control gate etching；And
And, in the present invention, owing to program pellicular cascade keeps constant, also ensure that the original mould of optics correction
Type is also suitable, and eliminates the time and cost again modeled.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete
Understand and its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 schematically shows and has prevented pattern crystal column surface etching from damaging according to the preferred embodiment of the invention
The first step of the chemical wet etching method of wound.
Fig. 2 schematically shows and has prevented pattern crystal column surface etching from damaging according to the preferred embodiment of the invention
The second step of the chemical wet etching method of wound.
Fig. 3 schematically shows and has prevented pattern crystal column surface etching from damaging according to the preferred embodiment of the invention
The third step of the chemical wet etching method of wound.
Fig. 4 schematically shows and has prevented pattern crystal column surface etching from damaging according to the preferred embodiment of the invention
4th step of the chemical wet etching method of wound.
Fig. 5 schematically shows and has prevented pattern crystal column surface etching from damaging according to the preferred embodiment of the invention
5th step of the chemical wet etching method of wound.
Fig. 6 schematically shows and has prevented pattern crystal column surface etching from damaging according to the preferred embodiment of the invention
6th step of the chemical wet etching method of wound.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention.Note, represent structure
Accompanying drawing may be not necessarily drawn to scale.Further, in accompanying drawing, same or like element indicate identical or
The label that person is similar to.
Detailed description of the invention
In order to make present disclosure more clear and understandable, below in conjunction with specific embodiments and the drawings to this
Bright content is described in detail.
The present invention uses the advanced figure thin film planarization of innovation to return process technique and has solved pattern wafer table
Face recurrent etching injury problem.In the present invention, by gap filling material by crystal column surface pattern
Fill smooth, then carry out planarizing back process technique and planarize to realize advanced figure film surface, then
Carry out photoetching and etching technics, thus solve the etching injury that crystal column surface figure causes due to high low head.
Below in conjunction with accompanying drawing, particularly preferred embodiment of the invention is described.
Fig. 1 to Fig. 6 schematically shows and has prevented pattern crystal column surface according to the preferred embodiment of the invention
Each step of the chemical wet etching method of etching injury.
As shown in Figures 1 to 6, prevented pattern crystal column surface etching from damaging according to the preferred embodiment of the invention
The chemical wet etching method of wound includes:
First step: form floating gate layer 10 and memory cell control gate on the substrate 100 in memory cell region
Pole layer 20, and form gate polysilicon layer 30 on the substrate 100 in outer peripheral areas, form sediment on substrate subsequently
Long-pending advanced figure film 40；
And specifically, it is preferable to ground, utilize double-deck advanced figure thin-film technique deposit high-level diagram in the first step
Shape film 40.
Such as, substrate is silicon substrate.
Wherein, in the first step, advanced figure film 40 surface of deposit be formed concavo-convex position (
Gap) 41.
First step carries out double-deck advanced figure thin-film technique and ensures enough advanced figure film barrier layer
Thickness.
Wherein, when first step advanced figure foamed film thickeies deposit, when etching according to control gate
The consumption of advanced figure film calculates the minimum thickness of advanced figure film, it is ensured that periphery needs protection
Region advanced figure film etch stopper thickness is enough the premise of this solution.
Second step: form gap filling material layer on advanced figure film 40, to fill advanced figure
Change the concavo-convex position of film 40.
That is, second step uses the preferable gap filling material of mobility 50 to be filled out by advanced figure film surface
Smooth.
Wherein, in the second step, gap is filled and is selected and advanced figure film material approximation and mobility
Preferably material, it is ensured that filled the planarization of crystal column surface, and do not result in subsequent planarization and return place's science and engineering
It is more smooth than affecting advanced figure film that skill occurs that the selection higher with advanced figure film is filled in gap
Degree.
And specifically, it is preferable to ground, the mobility of gap filling material is more than the mobility of advanced figure film.
And preferably, the physical property of gap filling material is similar to the physical property of advanced figure film.
Third step: use and planarize back process technique by the planarizing of advanced figure film 40 pattern；
Wherein, the etching technics planarizing back process process selection has gap filling material than advanced figure change
The low selection ratio of film (planarizes back the speed of the etching technics etching gap filling material processing process selection
Speed less than etching advanced figure film), prevent from affecting advanced figure film final flatness, and control
After system planarizes back process technique, flash cell district advanced figure film thickness is identical with old process scheme,
Thus can guarantee that the archetype of optics correction is also suitable, it is not necessary to again set up new mould based on thickness
Type.
4th step: deposit anti-reflective coating layer film 60；
5th step: coat photoresist and form photoetching agent pattern；Wherein, photoetching agent pattern covers periphery
The gate polysilicon layer 30 formed on region.
6th step: utilize photoetching agent pattern to perform etching processing so that floating gate layer 10 and memory cell are controlled
Grid layer 20 performs etching.From the dashed region of Fig. 6 it can be seen that do not etch external zones the 6th step
The gate polysilicon layer 30 formed on territory.
Thus, in the present invention, by gap filling material, crystal column surface pattern is filled smooth, then enter
Row planarizes back process technique and planarizes to realize advanced figure film surface, then carries out photoetching and etching work
Skill, thus solve the etching injury that crystal column surface figure causes due to high low head.
Additionally, in the present invention, owing to there is sufficiently thick advanced figure film gate polysilicon region and resists
Reflectance coating, just has enough barrier layer protected firmly gate polysilicon region when of control gate etching；And
And, in the present invention, owing to program pellicular cascade keeps constant, also ensure that the original mould of optics correction
Type is also suitable, and eliminates the time and cost again modeled.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in specification " first ",
" second ", " the 3rd " etc. describe be used only for distinguishing in specification each assembly, element, step etc., and not
It is intended to indicate that the logical relation between each assembly, element, step or ordinal relation etc..
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment is also
It is not used to limit the present invention.For any those of ordinary skill in the art, without departing from skill of the present invention
In the case of art aspects, technical solution of the present invention is made many by the technology contents that all may utilize the disclosure above
Possible variation and modification, or it is revised as the Equivalent embodiments of equivalent variations.Therefore, every without departing from this
The content of bright technical scheme, according to the present invention technical spirit to any simple modification made for any of the above embodiments,
Equivalent variations and modification, all still fall within the range of technical solution of the present invention protection.
Claims (10)
1. the chemical wet etching method preventing pattern crystal column surface etching injury, it is characterised in that including:
First step: form floating gate layer and memory cell control gate layer on substrate in memory cell region,
And on substrate, form gate polysilicon layer in outer peripheral areas, on substrate, deposit advanced figureization subsequently thin
Film；
Second step: form gap filling material layer on advanced figure film, to fill advanced figure
The concavo-convex position of film.
Third step: use and planarize back process technique by the planarizing of advanced figure film morphology；
4th step: deposit anti-reflective coating layer film；
5th step: coat photoresist and form photoetching agent pattern；
6th step: utilize photoetching agent pattern to perform etching processing to floating gate layer and memory cell control gate
Pole layer performs etching.
The chemical wet etching method preventing pattern crystal column surface etching injury the most according to claim 1,
It is characterized in that, utilize double-deck advanced figure thin-film technique deposit advanced figure film in the first step.
The chemical wet etching side preventing pattern crystal column surface etching injury the most according to claim 1 and 2
Method, it is characterised in that substrate is silicon substrate.
The chemical wet etching side preventing pattern crystal column surface etching injury the most according to claim 1 and 2
Method, it is characterised in that in the first step, the advanced figure film surface of deposit is formed with concavo-convex position.
The chemical wet etching side preventing pattern crystal column surface etching injury the most according to claim 1 and 2
Method, it is characterised in that in the first step, when etching according to control gate, the consumption of advanced figure film is come
Calculate the minimum thickness of advanced figure film.
The chemical wet etching side preventing pattern crystal column surface etching injury the most according to claim 1 and 2
Method, it is characterised in that the etching technics etching gap planarizing back process process selection of third step is filled
The speed of material is less than the speed of etching advanced figure film.
The chemical wet etching side preventing pattern crystal column surface etching injury the most according to claim 1 and 2
Method, it is characterised in that in the 5th step, photoetching agent pattern covers the gate polycrystalline formed in outer peripheral areas
Silicon layer.
The chemical wet etching side preventing pattern crystal column surface etching injury the most according to claim 1 and 2
Method, it is characterised in that do not etch the gate polysilicon layer formed in outer peripheral areas in the 6th step.
The chemical wet etching side preventing pattern crystal column surface etching injury the most according to claim 1 and 2
Method, it is characterised in that the mobility of gap filling material is more than the mobility of advanced figure film.
The chemical wet etching preventing pattern crystal column surface etching injury the most according to claim 1 and 2
Method, it is characterised in that the physical property of gap filling material is similar to the physical of advanced figure film
Energy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610357141.8A CN105845564B (en) | 2016-05-25 | 2016-05-25 | Prevent the chemical wet etching method of pattern crystal column surface etching injury |
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| CN201610357141.8A CN105845564B (en) | 2016-05-25 | 2016-05-25 | Prevent the chemical wet etching method of pattern crystal column surface etching injury |
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| CN105845564A true CN105845564A (en) | 2016-08-10 |
| CN105845564B CN105845564B (en) | 2018-08-24 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783803A (en) * | 2016-11-30 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | A kind of method and semiconductor structure for reducing the loss of photo-etching mark figure |
| CN107993922A (en) * | 2017-11-30 | 2018-05-04 | 上海华力微电子有限公司 | Avoiding control gate from forming middle etching and do over again causes the method for amorphous carbon film peeling |
| CN110896029A (en) * | 2019-10-25 | 2020-03-20 | 上海华力微电子有限公司 | Etching method and method for manufacturing semiconductor device |
| CN112975142A (en) * | 2021-03-02 | 2021-06-18 | 北京航空航天大学杭州创新研究院 | Film material patterning processing method based on femtosecond laser controllable etching |
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| US20090042399A1 (en) * | 2007-08-08 | 2009-02-12 | Brian Ashley Smith | Method for Dry Develop of Trilayer Photoresist Patterns |
| CN103441067A (en) * | 2013-08-16 | 2013-12-11 | 上海华力微电子有限公司 | Dual pattern forming method applied to grid line end cutting |
| CN103972176A (en) * | 2013-02-01 | 2014-08-06 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device manufacturing method |
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| US5872055A (en) * | 1996-10-23 | 1999-02-16 | United Microelectronics Corporation | Method for fabricating polysilicon conducting wires |
| US20090042399A1 (en) * | 2007-08-08 | 2009-02-12 | Brian Ashley Smith | Method for Dry Develop of Trilayer Photoresist Patterns |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783803A (en) * | 2016-11-30 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | A kind of method and semiconductor structure for reducing the loss of photo-etching mark figure |
| CN106783803B (en) * | 2016-11-30 | 2019-01-25 | 武汉新芯集成电路制造有限公司 | A kind of method and semiconductor structure reducing the loss of photo-etching mark figure |
| CN107993922A (en) * | 2017-11-30 | 2018-05-04 | 上海华力微电子有限公司 | Avoiding control gate from forming middle etching and do over again causes the method for amorphous carbon film peeling |
| CN107993922B (en) * | 2017-11-30 | 2020-12-01 | 上海华力微电子有限公司 | Method for preventing amorphous carbon film from peeling off caused by etching rework in control gate formation |
| CN110896029A (en) * | 2019-10-25 | 2020-03-20 | 上海华力微电子有限公司 | Etching method and method for manufacturing semiconductor device |
| CN110896029B (en) * | 2019-10-25 | 2021-11-12 | 上海华力微电子有限公司 | Etching method and method for manufacturing semiconductor device |
| CN112975142A (en) * | 2021-03-02 | 2021-06-18 | 北京航空航天大学杭州创新研究院 | Film material patterning processing method based on femtosecond laser controllable etching |
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| Publication number | Publication date |
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| CN105845564B (en) | 2018-08-24 |
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