CN105826444A - LED chip and manufacturing method thereof - Google Patents
LED chip and manufacturing method thereof Download PDFInfo
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- CN105826444A CN105826444A CN201510010137.XA CN201510010137A CN105826444A CN 105826444 A CN105826444 A CN 105826444A CN 201510010137 A CN201510010137 A CN 201510010137A CN 105826444 A CN105826444 A CN 105826444A
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Abstract
The invention discloses an LED chip and a manufacturing method thereof. The LED chip comprises a substrate, a buffer layer, an N-type layer, a light emitting layer, a P-type layer, a current diffusion conduction layer, a P electrode and an N electrode. The current diffusion conduction layer contacted with the P electrode adopts a hole structure, the size of the hole of the current diffusion conduction layer is 3 to 8 um larger than that of the P electrode, the P electrode has a Finger structure, and the Finger structure is contacted with indium tin oxide in the LED chip. The LED chip of the invention can enhance the adhesion strength between the current diffusion conduction layer at the edge and the electrode, and a falling risk between the current diffusion conduction layer at the edge and the electrode is reduced.
Description
Technical field
The present invention relates to field of photoelectric technology, particularly to a kind of LED chip and manufacture method thereof.
Background technology
LED (LightEmittingDiode, light emitting diode) the electrode adhesion of chip is the Key Performance Indicator of LED chip, if the electrode adhesion of LED chip goes wrong, not only can affect the reliability of LED chip, it is also possible to cause LED chip flicker and dead lamp.
In traditional LED chip, electrode directly contacts with ITO (tin indium oxide) conductive film, owing to the ability of dissolving each other between ITO conductive film and electrode is poor, causes electrode adhesion poor.
For promoting the electrode adhesion of LED chip, prior art provides the electrode structure of a kind of LED chip, as shown in Figure 1, including platform (Mesa), ITO conductive film, P electrode and N electrode, ITO conductive film and P electrode are positioned on platform, and the ITO conductive film contacted with P electrode is pore space structure, and the bore hole size of ITO conductive film is slightly less than the size of P electrode, the most of region making electrode has good adhesion, and ensures that LED chip has good diffusion.
But, in the prior art, the adhesion between ITO conductive film and the electrode at edge is the most poor, yet suffers from the risk come off between ITO conductive film and the electrode at edge.
The Chinese patent application that the number of applying for a patent is CN101908593A discloses the manufacture method of a kind of GaN base LED patterned transparent conductive film, the epitaxial wafer of GaN base LED evaporates or deposits layer of transparent conductive membrane layer, on transparent conductive film layer, hole is made by conventional lithographic mask corrosion technique, transparent conductive film layer is made to become network structure, institute's hole occupied area is the 5%-40% of transparent conductive film surface layer, the degree of depth of each hole is the 50%-100% of transparent conductive film layer thickness, transparent conductive film is annealed by technique the most routinely.
Summary of the invention
The invention provides a kind of LED chip and manufacture method thereof, the defect poor to solve adhesion between ITO conductive film and the electrode at edge in prior art.
The invention provides a kind of LED chip, including substrate, cushion, N-type layer, luminescent layer, P-type layer, current spread conductive layer, P electrode and N electrode, described cushion is positioned at described substrate, described N-type layer and described N electrode are positioned on described cushion, described luminescent layer is positioned on described N-type layer, described P-type layer is positioned on described luminescent layer, described current spread conductive layer is positioned on described P-type layer, described P electrode is positioned on described current spread conductive layer, described P electrode and described N electrode lay respectively at the two ends of described LED chip, the current spread conductive layer contacted with described P electrode uses pore space structure, the size of described hole is more than the size of described P electrode.
Alternatively, described hole is etched to described P-type layer, is positioned in described current spread conductive layer the side near described P electrode.
Alternatively, the bore hole size bigger than the size of P electrode 3～8um of described current spread conductive layer.
Alternatively, described P electrode has a finger, and described finger and described current spread conductive layers make contact.
Alternatively, described P electrode has three fingers, two of which finger extends near one end of described N electrode in described LED chip from described P electrode, and another finger extends near one end of described P electrode in described LED chip from described P electrode.
Present invention also offers the manufacture method of a kind of LED chip, comprise the following steps:
Growth apparatus loads substrate；
Generate cushion over the substrate, described cushion generates N-type layer；
Described N-type layer generates luminescent layer, generates P-type layer on the light-emitting layer；Described P-type layer generates current spread conductive layer；
Described current spread conductive layer is etched to pore space structure, described current spread conductive layer deposits P electrode, described cushion deposits N electrode, described P electrode and described N electrode lay respectively at the two ends of described LED chip, the current spread conductive layer contacted with described P electrode uses pore space structure, and the size of described hole is more than the size of described P electrode.
Alternatively, described hole is etched to described P-type layer, is positioned in described current spread conductive layer the side near described P electrode.
Alternatively, the bore hole size bigger than the size of P electrode 3～8um of described current spread conductive layer.
Alternatively, described P electrode has a finger, and described finger and described current spread conductive layers make contact.
Alternatively, described P electrode has three fingers, two of which finger extends near one end of described N electrode in described LED chip from described P electrode, and another finger extends near one end of described P electrode in described LED chip from described P electrode.
LED chip in the present invention can strengthen the adhesion between current spread conductive layer and the electrode at edge, reduces the risk that comes off between current spread conductive layer and the electrode at edge.
Accompanying drawing explanation
Fig. 1 is the electrode structural chart of a kind of LED chip of the prior art；
Fig. 2 and Fig. 3 is the electrode structural chart of a kind of LED chip in the embodiment of the present invention；
Fig. 4 is the manufacture method flow chart of a kind of LED chip in the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
Embodiments provide a kind of LED chip, as shown in Figures 2 and 3, including substrate, cushion, N-type layer, luminescent layer, P-type layer, current spread conductive layer, P electrode and N electrode, cushion is positioned at substrate, N-type layer and N electrode are positioned on cushion, and luminescent layer is positioned on N-type layer, and P-type layer is positioned on luminescent layer, current spread conductive layer is positioned on P-type layer, and P electrode is positioned on current spread conductive layer.
Wherein, P electrode and N electrode lay respectively at the two ends of LED chip, the current spread conductive layer contacted with P electrode uses pore space structure, this hole is etched to P-type layer, it is positioned in current spread conductive layer the side near P electrode, the size 3-8um bigger than the size of P electrode of this hole, P electrode is contacted with P-type layer by this hole.
In addition, P electrode has Finger (finger-like) structure of three and current spread conductive layers make contact, two of which Finger structure extends near one end of N electrode in LED chip from P electrode, and another Finger structure extends near one end of P electrode in LED chip from P electrode.
LED chip in the embodiment of the present invention can strengthen the adhesion between current spread conductive layer and the electrode at edge, reduces the risk that comes off between current spread conductive layer and the electrode at edge.
Based on above-mentioned LED chip, the embodiment of the present invention additionally provides the manufacture method of a kind of LED chip, as shown in Figure 4, comprises the following steps:
Step 401, loads substrate on growth apparatus.
Wherein, growth apparatus can be PVD (PhysicalVaporDeposition, physical vapour deposition (PVD)) equipment, electron-beam evaporator, CVD (ChemicalVaporDeposition, chemical gaseous phase deposit) equipment, PLD (PulsedLaserDeposition, plasma laser deposition) equipment, MOCVD (Metal-OrganicChemicalVaporDeposition, metal organic chemical vapor deposition) equipment, any one in dimorphism hot vaporizer and sputtering equipment, it is also possible to be other equipment.Substrate can comprise any one in Al2O3, GaN, SiC, ZnO, Si, GaP, InP, Ga2O3, conductive substrates and GaAs.
Step 402, generates cushion on substrate, generates N-type layer on the buffer layer.
Step 403, generates luminescent layer in N-type layer, generates P-type layer on luminescent layer.
Step 404, generates current spread conductive layer in P-type layer.
Step 405, is etched to pore space structure by current spread conductive layer, deposits P electrode, deposit N electrode on the buffer layer on current spread conductive layer.
Specifically, the position etching pore space structure contacted with P electrode in current spread conductive layer, this hole is etched to P-type layer, is positioned in current spread conductive layer the side near P electrode, and the size of this hole is 3～8um, slightly larger than the size of P electrode.P electrode and N electrode lay respectively at the two ends of LED chip, P electrode has the Finger structure of three and current spread conductive layers make contact, two of which Finger structure extends near one end of N electrode in LED chip from P electrode, and another Finger structure extends near one end of P electrode in LED chip from P electrode.
By above-mentioned manufacture method, it is possible to strengthen the adhesion between current spread conductive layer and the electrode at edge in LED chip, reduce the risk that comes off between current spread conductive layer and the electrode at edge.
Can directly use, in conjunction with the step in the method that the embodiments described herein describes, the software module that hardware, processor perform, or the combination of the two is implemented.In any other form of storage medium that software module is known in can being placed in random access memory (RAM), internal memory, read only memory (ROM), electrically programmable ROM, electrically erasable ROM, depositor, hard disk, moveable magnetic disc, CD-ROM or technical field.
The above; being only the detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, any those familiar with the art is in the technical scope that the invention discloses; change can be readily occurred in or replace, all should contain within protection scope of the present invention.Therefore, protection scope of the present invention should described be as the criterion with scope of the claims.
Claims (10)
1. a LED chip, it is characterized in that, including substrate, cushion, N-type layer, luminescent layer, P-type layer, current spread conductive layer, P electrode and N electrode, described cushion is positioned at described substrate, described N-type layer and described N electrode are positioned on described cushion, described luminescent layer is positioned on described N-type layer, described P-type layer is positioned on described luminescent layer, described current spread conductive layer is positioned on described P-type layer, described P electrode is positioned on described current spread conductive layer, described P electrode and described N electrode lay respectively at the two ends of described LED chip, the current spread conductive layer contacted with described P electrode uses pore space structure, the size of described hole is more than the size of described P electrode.
2. LED chip as claimed in claim 1, it is characterised in that described hole is etched to described P-type layer, is positioned in described current spread conductive layer the side near described P electrode.
3. LED chip as claimed in claim 1, it is characterised in that the size bigger than the size of P electrode 3～8um of described hole.
4. LED chip as claimed in claim 1, it is characterised in that described P electrode has a finger, and described finger and described current spread conductive layers make contact.
5. LED chip as claimed in claim 4, it is characterized in that, described P electrode has three fingers, two of which finger extends near one end of described N electrode in described LED chip from described P electrode, and another finger extends near one end of described P electrode in described LED chip from described P electrode.
6. the manufacture method of a LED chip, it is characterised in that comprise the following steps:
Growth apparatus loads substrate；
Generate cushion over the substrate, described cushion generates N-type layer；
Described N-type layer generates luminescent layer, generates P-type layer on the light-emitting layer；
Described P-type layer generates current spread conductive layer；
Described current spread conductive layer is etched to pore space structure, described current spread conductive layer deposits P electrode, described cushion deposits N electrode, described P electrode and described N electrode lay respectively at the two ends of described LED chip, the current spread conductive layer contacted with described P electrode uses pore space structure, and the size of described hole is more than the size of described P electrode.
7. method as claimed in claim 6, it is characterised in that described hole is etched to described P-type layer, is positioned in described current spread conductive layer the side near described P electrode.
8. method as claimed in claim 6, it is characterised in that the size bigger than the size of P electrode 3～8um of described hole.
9. method as claimed in claim 6, it is characterised in that described P electrode has a finger, and described finger and described current spread conductive layers make contact.
10. method as claimed in claim 9, it is characterized in that, described P electrode has three fingers, two of which finger extends near one end of described N electrode in described LED chip from described P electrode, and another finger extends near one end of described P electrode in described LED chip from described P electrode.
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| CN201510010137.XA CN105826444B (en) | 2015-01-08 | 2015-01-08 | A kind of LED chip and its manufacturing method |
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| CN201510010137.XA CN105826444B (en) | 2015-01-08 | 2015-01-08 | A kind of LED chip and its manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987404A (en) * | 2020-08-13 | 2020-11-24 | 安徽蓝煜电子科技有限公司 | Substrate integrated waveguide antenna |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110105990A (en) * | 2010-03-22 | 2011-09-28 | 삼성엘이디 주식회사 | Semiconductor light emitting device |
| CN102332518A (en) * | 2011-09-16 | 2012-01-25 | 晶能光电（江西）有限公司 | Luminescent semiconductor device with complementary electrode layer and manufacturing method thereof |
| CN102420279A (en) * | 2011-11-03 | 2012-04-18 | 厦门市三安光电科技有限公司 | Gallium nitride based light emitting diode and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110105990A (en) * | 2010-03-22 | 2011-09-28 | 삼성엘이디 주식회사 | Semiconductor light emitting device |
| CN102332518A (en) * | 2011-09-16 | 2012-01-25 | 晶能光电（江西）有限公司 | Luminescent semiconductor device with complementary electrode layer and manufacturing method thereof |
| CN102420279A (en) * | 2011-11-03 | 2012-04-18 | 厦门市三安光电科技有限公司 | Gallium nitride based light emitting diode and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987404A (en) * | 2020-08-13 | 2020-11-24 | 安徽蓝煜电子科技有限公司 | Substrate integrated waveguide antenna |
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Effective date of registration: 20221026 Address after: Floor 11, Mingzhu Building, Zhaoxin Square, Fujing Garden, No. 11, Pingzhou Nangang Road, Guicheng Street, Nanhai District, Foshan, Guangdong 528251 Patentee after: Guangdong Limited by Share Ltd Group Address before: 528200 Building A, Pingzhou Jingu Optoelectronic Community, Nanhai District, Foshan City, Guangdong Province Patentee before: QUANTUM WAFER Inc. |
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