CN105826228B - The forming method of three-dimension packaging structure - Google Patents
The forming method of three-dimension packaging structure Download PDFInfo
- Publication number
- CN105826228B CN105826228B CN201510006918.1A CN201510006918A CN105826228B CN 105826228 B CN105826228 B CN 105826228B CN 201510006918 A CN201510006918 A CN 201510006918A CN 105826228 B CN105826228 B CN 105826228B
- Authority
- CN
- China
- Prior art keywords
- alignment
- bonding
- substrate
- metal pad
- bonding substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
A kind of forming method of three-dimension packaging structure, comprising: two bonding substrates having positioned at positive metal pad, the front relative spacing setting of two bonding substrates are provided；The upper surface of the metal pad of two bonding substrates is set to generate induced charge；Find position corresponding to two bonding substrates when active force reaches maximum between the induced charge in two bonding substrates, using the position of two when the active force maximum bonding substrates as alignment position, the metal pad in described two bonding substrates is aligned in the alignment position；After alignment, described two bonding substrates are bonded together.The present invention solves the problems, such as that the alignment precision of two bonding substrates in the prior art is lower.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of forming method of three-dimension packaging structure.
Background technique
With the requirement of microelectronic component high integration, multifunction, existing two-dimensional package technology is difficult to meet encapsulation
It is required that and three-dimension packaging have many advantages, such as size it is small, it is light-weight, reduce signal delay, just become microelectronic device package master
Flow Technique.Bonding be realize three-dimension packaging critical process, applied to three-dimension packaging bonding method there are many, one of which is
Metal-metal bonding.It is existing it is a kind of using metal-metal bonding method formed three-dimension packaging structure method include:
As shown in Figure 1, provide two bonding substrates 1, bonding substrate 1 have positioned at positive metal pad 10 and by
The insulating layer 11 that adjacent two metal pad 10 separates；Two are bonded the front relative spacing setting of substrate 1, are bonded according to two
Mechanically movement is bonded substrate 1 to alignment mark (not shown) in substrate 1, so that the metal pads 10 of two bonding substrates 1 are right
It is quasi-；As shown in Fig. 2, after alignment, along with the direction for the front vertical for be bonded substrate 1, it is mechanically mobile one of to be bonded base
Then two bonding substrates 1 are bonded together, until two intervals eliminations being bonded between substrates 1 in bonding process by bottom 1
In, under certain temperature and pressure effect, phase counterdiffusion and reality between the interface atoms of the metal pad 10 in two bonding substrates 1
It is now bonded, so that two bonding substrates 1 are fixed together.
But found in practical manufacturing process, the forming method of above-mentioned three-dimension packaging structure has the following problems: alignment
When, two bonding substrates 1 are lower according to alignment mark alignment precision obtained；After alignment, in mobile one of bonding
Until during two intervals eliminations being bonded between substrates 1, which is easy vertical with moving direction substrate 1
Direction on shake so that two be bonded substrates 1 between interval eliminate at the time of, two bonding substrate 1 alignment precision
Lower than alignment precision obtained in alignment procedures before.
With the raising of microelectronic component integrated level, the size of metal pad 10 is smaller and smaller, density is increasing, adjacent
The distance between two metal pads 10 are smaller and smaller.If the alignment precision of the metal pad 10 in two bonding substrates 1 is lower, very
Be easy to appear following problems: wherein the metal pad 10 in a bonding substrate 1 is not only bonded corresponding metal in substrate 1 with another
The contact electrical connection of pad 10, also the metal pad 10 neighbouring with the corresponding metal pad 10 contacts electrical connection, causes short circuit；Its
In metal pad 10 in a bonding substrate 1 very close to the neighbouring metal of corresponding metal pad 10 in another bonding substrate 1
Pad 10 (the two is not physically contacted), since the metal in metal pad 10 has the property that spreads in insulating layer 11, therefore one
Metal pad 10 in bonding substrate 1 may be bonded correspondence in substrate 1 by the metal that is diffused in insulating layer 11, with another
10 short circuit of the neighbouring metal pad of metal pad 10.
Summary of the invention
The problem to be solved in the present invention is: the alignment essence of two bonding substrates in the forming method of existing three-dimension packaging structure
Spend it is lower, be easy to happen two bonding substrate on metal pad short circuit problem.
To solve the above problems, the present invention provides a kind of forming methods of three-dimension packaging structure, comprising:
Two bonding substrates are provided, the bonding substrate, which has, is located at positive metal pad, two bonding substrates
Front relative spacing setting；
The upper surface of the metal pad of two bonding substrates is set to generate induced charge；
Find two bonding substrates when active force reaches maximum between the induced charge in two bonding substrates
Corresponding position, using the position of two when the active force maximum bonding substrates as alignment position, in the alignment
Metal pad in described two bonding substrates is aligned by position；
After alignment, described two bonding substrates are bonded together.
Optionally, the method for the alignment position is found are as follows: repeat to carry out alignment adjusting to two bonding substrates
Step several times, the alignment adjust the step of include: that one of them described bonding base plane is made to be moved to initial alignment position,
Active force between induced charge of the initial alignment position to two in the bonding substrate measures, described right every time
The initial alignment position in quasi- regulating step is different.
Optionally, the step of alignment is adjusted includes: to be directed at pair adjusted and in a second direction along first direction
Standard is adjusted, and the first direction is vertical with second direction and parallel with the back side, the metal pad in the bonding substrate
It is alternatively arranged along the first direction, second direction；
The alignment along first direction is adjusted are as follows: is moved to one of them described bonding substrate along the first direction
Initial alignment position, the active force between induced charge of the initial alignment position to two in the bonding substrate are surveyed
Amount；
The alignment in a second direction is adjusted are as follows: is moved to one of them described bonding substrate along the second direction
Initial alignment position, the active force between induced charge of the initial alignment position to two in the bonding substrate are surveyed
Amount；
Repeat to two bonding substrates carry out alignment adjust the step of several times in: firstly, repeatedly it is described along first
The alignment in direction is adjusted several times, and position work corresponding to two bonding substrates when the active force is reached maximum value
For the alignment position on first direction；Then, it repeats the alignment in a second direction to adjust several times, and by the active force
Position corresponding to two bonding substrates is as the alignment position in second direction when reaching maximum value.
Optionally, several times in the alignment regulating step, define the adjacent alignment regulating step described three times according to when
Between be successively followed successively by the first, second and third alignment regulating step；
The initial alignment position in the third alignment regulating step is located at: in the first and second alignment regulating step
Near the initial alignment position corresponding to the larger step of the active force.
Optionally, make two it is described bonding substrate metal pads upper surface generate induced charge method include: by
The back side of the bonding substrate is adsorbed on electrostatic chuck, and the upper surface of the metal pad is made to have induced charge.
Optionally, the absolute value of voltage for being applied to the electrostatic chuck is 500V to 20000V.
Optionally, the induced charge that the metal pad upper surface of two bonding substrates generates is electrically identical.
Optionally, after alignment, the induced charge for generating the metal pad upper surface of two bonding substrates is electrical
On the contrary, one of them described bonding substrate is leaned under the attraction effect of the induced charge to bonding substrate described in another
Closely；
When two bonding substrates contact, described two bonding substrates are bonded together.
Optionally, the bonding substrate also has positioned at positive insulating layer, and adjacent two metal pad is by described exhausted
Edge layer separates.
Optionally, the metal pad protrudes from the surface of insulating layer.
Optionally, the protrusion height of the metal pad is 50 angstroms to 1000 angstroms.
Optionally, the material of the metal pad is copper.
Compared with prior art, technical solution of the present invention has the advantage that
In the forming method of three-dimension packaging structure provided by the present invention, the metal pad that two are bonded in substrate is aligned
When, the upper surface that the metal pad of substrate is bonded at two generates induced charge.Bonding is being parallel to based on two bonding substrates
The active force between induced charges when relative position difference on the direction at the back side of substrate, in two bonding substrates is different
Principle, finds position corresponding to two bonding substrates when active force reaches maximum, which is alignment position.With the prior art
The middle method that two bonding substrate alignments are realized according to alignment mark is compared, and two are bonded substrate in technical solution of the present invention
Alignment precision is higher.
Detailed description of the invention
Fig. 1 is the alignment schematic diagram for being currently used for being formed two bonding substrates of three-dimension packaging structure；
Fig. 2 is to be currently used for forming the schematic diagram that two bonding substrates of three-dimension packaging structure are bonded together；
Fig. 3 is the alignment signal that two bonding substrates of three-dimension packaging structure are used to form in the first embodiment of the present invention
Figure；
Fig. 4 is that the metal pad in the first embodiment of the present invention in two bonding substrates is illustrated along the alignment of first direction
Figure；
Fig. 5 is the alignment signal of metal pad in a second direction in the first embodiment of the present invention in two bonding substrates
Figure；
Fig. 6 is the schematic diagram that two bonding substrates are bonded together shown in Fig. 3；
Fig. 7 is the alignment signal that two bonding substrates of three-dimension packaging structure are used to form in the second embodiment of the present invention
Figure.
Specific embodiment
As previously mentioned, the technical problem to be solved by the present invention is two keys in the forming method of existing three-dimension packaging structure
The alignment precision for closing substrate is lower, is easy to happen the problem of the metal pad short circuit in two bonding substrates.
Specifically, in the forming method of three-dimension packaging structure provided by the present invention, by the metal in two bonding substrates
When pad is aligned, the upper surface that the metal pad of substrate is bonded at two generates induced charge.Based on two bonding substrates flat
Effect of the row between the induced charge when relative position difference being bonded on the direction at the back side of substrate, in two bonding substrates
The different principle of power, finds position corresponding to two bonding substrates when active force reaches maximum, which is alignment position.Really
After the alignment position for making two bonding substrates, two bonding substrates can be bonded together, avoid two bonding bases
The problem of metal pad short circuit on bottom occurs.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
First embodiment
As shown in figure 3, providing two bonding substrates 10, bonding substrate 10, which has, is located at positive metal pad 100, two
It is bonded the front relative spacing setting of substrate 10, is divided into H between defining between two bonding substrates 10.
Substrate 10 is bonded other than with metal pad 100, also there is semiconductor substrate 110 and is located at semiconductor
Insulating layer 120 on substrate 110 is bonded two metal pad 100 of arbitrary neighborhood in substrate 10 and is separated by insulating layer 120.
Two bonding substrates 10 semiconductor substrates 110 be respectively formed on circuit (not shown), metal pad 100 with partly lead
Circuit electrical connection in body substrate 110.In the present embodiment, the three-dimension packaging structure is cmos image sensor,
In one bonding substrate 10 semiconductor substrate 110 on circuit be photosensitive circuit, it is another bonding substrate 10 semiconductor substrate
Circuit on 110 is data processing circuit.In other embodiments, the three-dimension packaging structure may be other devices, such as
MEMS (Micro-Electro-Mechanical System, MEMS).
In the present embodiment, semiconductor substrate 110 is silicon substrate.In other embodiments, semiconductor substrate 110 can also be with
For other common semiconductor materials.
In the present embodiment, the material of insulating layer 120 is silica.In other embodiments, insulating layer 120 may be
Other insulating materials, such as silicon nitride, silicon oxynitride.
In the present embodiment, the material of metal pad 100 is copper.In other embodiments, metal pad 100 may be
Other metal materials, such as copper alloy.
In the present embodiment, metal pad 100 protrudes from the surface of insulating layer 120.In order in subsequent bonding steps
Good bonding effect can be obtained, in the present embodiment, the protrusion height of metal pad 100 is set as 50 angstroms to 1000 angstroms.
In other embodiments, the protrusion height of metal pad 100 can also do other adaptable adjustment according to actual needs.At it
In his embodiment, metal pad 100 can also be flushed with the surface of insulating layer 120.
In the present embodiment, the size of the metal pad 100 in two bonding substrates 10 is not identical.In other embodiments
In, the size of the metal pad 100 in two bonding substrates 10 can also be identical.
It should be noted that in this step, as long as making the front relative spacing setting of two bonding substrates 10, for
Whether the metal pad 100 of two bonding substrates 10 is directed at not restricted requirement.
In the present embodiment, when being bonded the front relative spacing setting of substrate 10 at two, the back side S of bonding substrate 10 inhales
It is attached on slide holder.In the present embodiment, the slide holder is electrostatic chuck 20 (e-chuck).In other embodiments, described
Slide holder may be vacuum chuck.
Induced charge is generated with continued reference to the upper surface for the metal pad 100 for shown in Fig. 3, making two bonding substrates 10.
According to the absorption principle of electrostatic chuck 20 it is found that when the back side S for being bonded substrate 10 is adsorbed on electrostatic chuck 20,
Electrostatic chuck 20 is applied voltage, and is bonded the upper surface of the metal pad 100 of substrate 10 (i.e. along the thickness of bonding substrate 10
Surface of the direction far from back side S) there is induced charge.
In the present embodiment, the voltage that two electrostatic chucks 20 are applied is voltage of the same race, is negative voltage, two bondings
The upper surface of the metal pad 100 of substrate 10 generates induced charge of the same race, is negative electrical charge.Electrostatic chuck 20 is applied negative voltage
When, the back side S for the bonding substrate 10 being attracted on electrostatic chuck 20 generates positive charge of inducting, the upper surface of metal pad 100
Generation is inducted negative electrical charge.
In other embodiments, the voltage that two electrostatic chucks 20 are applied can also be positive voltage, at this point, two keys
The upper surface for closing the metal pad 100 of substrate 10 generates positive charge of inducting.
When being bonded the front relative spacing setting of substrate 10 at two, due to the metal pad 100 of two bonding substrates 10
Upper surface have an induced charge, therefore can have active force between the induced charge of two bonding substrates 10.In this implementation
In example, the induced charge for being bonded substrate 10 due to two is like charges, therefore the active force is repulsive force.
Two bonding substrates 10 on metal pad 100 alignment precision difference when, that is, two bonding substrates 10 with back
When relative position on face S parallel direction different (intervals between two bonding substrates 10 are maintained as H at this time), two keys
The active force closed between substrate 10 is not identical.When the alignment precision that two are bonded substrate 10 is higher, two bonding substrates
The active force between 10 is bigger；Conversely, when the alignment precision that two are bonded substrates 10 is lower, two bonding substrates 10 it
Between the active force it is smaller.
Based on the above principles, in the inventive solutions, the upper table of the metal pad 100 of substrate 10 is bonded at two
After face generates induced charge, two bondings when active force reaches maximum between the induced charge in two bonding substrates 10 are found
Position corresponding to substrate 10, using the position of two bonding substrates 10 when the active force maximum as alignment position, described
The metal pad 100 that two are bonded in substrate 10 is aligned by alignment position.That is, technical solution of the present invention is according to two bonding bases
The amount of force between bottom 10 determines the alignment position of the metal pad 100 of two bonding substrates 10.
Specifically, in the present invention, it repeats to carry out two bonding substrates 10 the step of alignment is adjusted several times, it is described right
The step of standard is adjusted includes: to make one of bonding 10 planar movement of substrate to initial alignment position, in the initial alignment position pair
The active force between induced charge in two bonding substrates 10 measures, described first in the alignment regulating step every time
It is different to be directed at position, position corresponding to two bonding substrates 10 is as alignment position when the active force is reached maximum value.
In the present invention, bonding substrate 10 refers to as planar movement: bonding substrate 10 is only done along the side parallel with 10 back side S of substrate is bonded
To movement, during wherein one bonding 10 planar movement of substrate, two bonding substrates 10 intervals remain
H。
In order to ensure two obtained be bonded substrate 10 metal pad 100 alignment position precision with higher,
Repeating should be more as far as possible to the number that two bonding substrates 10 carry out alignment adjusting, and front and back is aligned in regulating step twice
The distance between the initial alignment position should be smaller as far as possible.
In each alignment regulating step, position that two are bonded substrates 10 and in the position institute are recorded
Measure the active force obtained.So, it is repeating to carry out the step of alignment is adjusted several times to two bonding substrates 10
Later, the relative size of active force obtained can be measured in more each alignment regulating step, and found out maximum
The position of two bonding substrates 10 corresponding to the active force and the maximum active force.
It should be noted that in the inventive solutions, not to the initial alignment position in alignment regulating step
There is concrete restriction, there is no too big in the metal pad 100 being bonded in substrate 10 of the initial alignment position two as long as making
Deviation.It, can be according to two bonding substrates in order to enable the more close alignment position in the initial alignment position
Alignment mark (not shown) on 10 determines the initial alignment position.
In the present embodiment, the adjacent alignment regulating step described three times is defined in the alignment regulating step several times
The first alignment regulating step, the second alignment regulating step, third alignment regulating step are followed successively by according to time order and function；The third
The initial alignment position in alignment regulating step is located at: institute in the first alignment regulating step and the second alignment regulating step
It states near the initial alignment position corresponding to the larger step of active force.That is, if described first is directed at the institute in regulating step
State the active force that active force is greater than in the second alignment regulating step, then it is described in the third alignment regulating step
Initial alignment position is located near the initial alignment position in the first alignment regulating step.Conversely, if first alignment
The active force in regulating step is less than the active force in the second alignment regulating step, then the third alignment is adjusted
It saves near the initial alignment position that the initial alignment position in step is located in the second alignment regulating step.
So, it several times in the alignment regulating step, is aligned in first time alignment regulating step and second
The initial alignment position in each alignment regulating step carried out after regulating step, can be according to preceding described twice
The active force in regulating step is directed to determine, the initial alignment position determined is enabled to become closer to bonding base
The alignment position at bottom 10 improves the efficiency that alignment is adjusted to reduce the number of the alignment regulating step.
In the present embodiment, the alignment regulating step include: the alignment shown in Fig. 4 along first direction X adjust and
The alignment of Y in a second direction shown in fig. 5 is adjusted, and first direction X is vertical with second direction Y, and with the back that is bonded substrate 10
Face S is parallel, and the metal pad 100 being bonded in substrate 10 is alternatively arranged along first direction X, second direction Y.
As shown in figure 4, the alignment along first direction X is adjusted are as follows: make one of bonding substrate 10 along first direction X
It is moved to initial alignment position, is carried out in the active force that the initial alignment position is bonded two between the induced charge in substrate 10
Measurement.
As shown in figure 5, the alignment of the Y in a second direction is adjusted are as follows: make one of bonding substrate 10 Y in a second direction
It is moved to initial alignment position, is carried out in the active force that the initial alignment position is bonded two between the induced charge in substrate 10
Measurement.
Repeat to two bonding substrates 10 carry out alignment adjust the step of several times in: firstly, repeatedly along first direction X's
Position corresponding to two bonding substrates 10 is as first party when being aligned and adjust several times, and the active force being reached maximum value
Alignment position on X, that is, when executing along the alignment regulating step of first direction X, two bonding substrates 10 are in second direction
Position on Y remains unchanged；Then, the alignment for repeating Y in a second direction is adjusted several times, and the active force is reached maximum
Position corresponding to two bonding substrates 10 is as the alignment position on second direction Y when value, that is, is executing Y in a second direction
Alignment regulating step when, position of two bonding substrates 10 in a first direction on X remains unchanged.In other words, in the present embodiment
Technical solution in, find out two bonding substrates 10 alignment position on X in a first direction first, then find out two bonding bases
Alignment position of the bottom 10 on second direction Y.
During the alignment along first direction X described several times is adjusted, it is aligned in first time alignment regulating step and second
The initial alignment position in each alignment regulating step carried out after regulating step, can be according to preceding described twice
The active force in regulating step is directed to determine, the initial alignment position determined is enabled to become closer to bonding base
The alignment position on X in a first direction of bottom 10 improves pair so that reducing the alignment along first direction X adjusts number
The efficiency that standard is adjusted.With reference to Fig. 4, when one of bonding substrate 10 position shown in Fig. 4 (a) is moved to along first direction X
Shown in Fig. 4 (b) when position, the position of the bonding substrate 10 becomes closer to the alignment on X in a first direction of bonding substrate 10
Position.
During the alignment of the Y in a second direction is adjusted several times, it is aligned in first time alignment regulating step and second
The initial alignment position in each alignment regulating step carried out after regulating step, can be according to preceding described twice
The active force in regulating step is directed to determine, the initial alignment position determined is enabled to become closer to bonding base
Alignment position of the bottom 10 on second direction Y improves pair so that the alignment for reducing the Y in a second direction adjusts number
The efficiency that standard is adjusted.With reference to Fig. 5, when one of bonding substrate 10 position shown in Fig. 5 (a), Y is moved in a second direction
Shown in Fig. 5 (b) when position, the position of the bonding substrate 10 becomes closer to alignment of the bonding substrate 10 on second direction Y
Position.
It repeats to adjust in several times along the alignment of first direction X or second direction Y, the same bonding base can be moved always
Bottom 10 can also alternately move two bonding substrates 10.
In a particular embodiment, it repeats to adjust several times and repeat Y in a second direction along the alignment of first direction X
Alignment is adjusted in several times, is to move the same bonding substrate 10 always, i.e., another bonding substrate 10 remains static
It is motionless.During determining the alignment position of two bonding substrates 10:
Firstly, mobile one of bonding substrate 10, makes one of bonding substrate 10 be bonded substrate relative to another
10 position in a first direction on X changes, and the active force being bonded between the induced charge in substrates 10 to two carries out
Measurement.When the active force reaches maximum value, using position corresponding to two bonding substrates 10 as the alignment on first direction X
Position, under this position, two bonding substrates 10 realize the alignment of first direction X.
Then, the same bonding substrate 10 is continued to move to, one of bonding substrate 10 is made to be bonded base relative to another
Position of the bottom 10 on second direction Y changes, and to two be bonded substrates 10 on induced charge between active force into
Row measurement.When the active force reaches maximum value, using position corresponding to two bonding substrates 10 as pair on second direction Y
Level is set, and under this position, two bonding substrates 10 realize the alignment of second direction Y.
In practical manufacturing process, the protrusion height for being bonded each metal pad 100 in substrate 10 is often not consistent.It will
In 100 alignment procedures of metal pad in two bonding substrates 10, make one of bonding 10 planar movement of substrate to just right
When level is set, the induced charge for the metal pad 100 being bonded in substrate 10 due to two is on the contrary, therefore when in two bonding substrates 10
When higher metal pad 100 is closer, the two bonding substrates 10 that the repulsive force between induced charge can constitute continue close
Resistance, and then prevent in two bonding substrates 10 the problem of higher metal pad 100 bumps against.
The voltage swing for being applied to electrostatic chuck 20 will have a direct impact on the sense generated on the metal pad 100 for being bonded substrate 10
Raw charge, and then affect the amount of force between two bonding substrates 10.It has been investigated that if being applied to electrostatic suction
The absolute value of voltage of disk 20 is too small, and it is very few to will lead to the induced charge generated on metal pad 100, in turn results in two bonding bases
The active force between bottom 10 is too small.When the relative position that two are bonded substrate 10 changes, two bonding substrates 10
Between the active force variable quantity also can very little, so, can to the measurement accuracy of the active force propose it is more tight
The requirement of lattice.In addition, also becoming more when the active force being bonded between substrate 10 when two is too small to the measurement of the active force
For difficulty.
It has been investigated that can be avoided the above problem when the absolute value of voltage for being applied to electrostatic chuck 20 is greater than 500V
Occur.Certainly, the absolute value of voltage for being applied to electrostatic chuck 20 can not be excessive, otherwise can waste of energy, increase cost.At this
In embodiment, the absolute value of voltage for being applied to electrostatic chuck 20 is less than 20000V.
It should be noted that in the inventive solutions, generating the upper surface for being bonded the metal pad 100 of substrate 10
The method of induced charge should not be limited to above-described embodiment, and the upper table of metal pad 100 can also be made using other methods
Face generates induced charge.For example, directly voltage can be applied to bonding substrate 10, so that the upper surface of metal pad 100 generates
Induced charge.
In the present embodiment, the active force method between the induced charge of two bonding substrates 10 is measured are as follows: solid using one
Determine device to fix the outer peripheral surface for being bonded substrate 10, fixes one at the back side of bonding substrate 10 and be located at the central position of bonding substrate 10
The column set, under the active force effect between the induced charge that two are bonded substrate 10, bonding substrate 10 can generate deformation, by
It is associated in the height (with the size on the front vertical direction for being bonded substrate) of the column with the deformation, the deformation and institute
Active force association is stated, therefore, the height by measuring the column can obtain the active force.Certainly, in other implementations
In example, the active force can also be measured by other methods.
As shown in fig. 6, one of bonding substrate 10 is moved along the direction with the front vertical after alignment, it will
Two bonding substrates 10 are bonded together, to form three-dimension packaging structure.
In the present embodiment, the method for moving one of bonding substrate 10 along the direction with the front vertical are as follows:
The induced charge for generating 100 upper surface of metal pad of two bonding substrates 10 is electrically on the contrary, one of bonding substrate 10
It is close to another bonding substrate 10 under the attraction effect of the induced charge, the close process of substrate 10 is bonded at two
In, the attraction between induced charge can guide one of bonding substrate 10 mobile, prevent the bonding substrate 10 with shifting
Dynamic direction is shaken on vertical direction, at the time of so that the interval being bonded between substrate 10 at two is eliminated, two bonding substrates
10 alignment precision is consistent with alignment precision obtained in alignment procedures before, so, by two bonding bases
After bottom 10 is bonded together, the problem that can be avoided 100 short circuit of metal pad in two bonding substrates 10 occurs.
Second embodiment
Difference between second embodiment and first embodiment is: in a second embodiment, as shown in fig. 7, two quiet
The voltage that electric sucker 20 applies is xenogenesis voltage, one of them be positive voltage, another be negative voltage, two are bonded substrate 10
The upper surface of metal pad 100 generates xenogenesis induced charge, one of them be positive charge, another be negative electrical charge.
When electrostatic chuck 20 is applied positive voltage, the back side S for being attracted to the bonding substrate 10 on electrostatic chuck 20 is generated
Induct negative electrical charge, the upper surface of metal pad 100 generates positive charge of inducting.When electrostatic chuck 20 is applied negative voltage, it is adsorbed
The back side S of bonding substrate 10 on electrostatic chuck 20 generates positive charge of inducting, and the upper surface generation of metal pad 100 is inducted negative
Charge.
In the present embodiment, the induced charge for being bonded substrate 10 due to two is xenogenesis charge, therefore two bonding substrates 10
On induced charge between active force be attraction.
In a second embodiment, repeating the step of two bonding substrates 10 are carried out with alignment adjusting, process can join several times
First embodiment is examined, details are not described herein.
It should be noted that in a second embodiment, the interval H between two bonding substrates should be maintained at safe range
It is interior, to prevent to puncture because of electric discharge between two bonding substrates 10.
In the first and second embodiment, the absolute value of voltage for being applied to two electrostatic chucks 20 can be equal, can not also phase
Deng.
In the present invention, each embodiment uses progressive literary style, and the difference of emphasis description and previous embodiment is each to implement
Same section in example is referred to previous embodiment.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (11)
1. a kind of forming method of three-dimension packaging structure characterized by comprising
Two bonding substrates are provided, the bonding substrate, which has, is located at positive metal pad, and two bonding substrates are just
The setting of face relative spacing；
The upper surface of the metal pad of two bonding substrates is set to generate induced charge；
It is right to find two bonding substrate institutes when active force reaches maximum between the induced charge in two bonding substrates
The position answered, using the position of two when the active force maximum bonding substrates as alignment position, in the alignment position
By the metal pad alignment in described two bonding substrates, wherein the method for finding the alignment position are as follows: repeat to two institutes
State bonding substrate carry out alignment adjust the step of several times, the alignment adjusting the step of include: to make one of them described bonding
Base plane is moved to initial alignment position, between induced charge of the initial alignment position to two in the bonding substrate
Active force measures, and the initial alignment position in the alignment regulating step is different every time；
After alignment, described two bonding substrates are bonded together.
2. forming method as described in claim 1, which is characterized in that the step of alignment is adjusted includes: along first direction
Alignment adjust and alignment in a second direction is adjusted, the first direction it is vertical with second direction and be bonded substrate
The back side it is parallel, it is described bonding substrate on metal pad be alternatively arranged along the first direction, second direction；
The alignment along first direction is adjusted are as follows: is moved to one of them described bonding substrate along the first direction just right
Level is set, and the active force between induced charge of the initial alignment position to two in the bonding substrate measures；
The alignment in a second direction is adjusted are as follows: is moved to one of them described bonding substrate along the second direction just right
Level is set, and the active force between induced charge of the initial alignment position to two in the bonding substrate measures；
Repeat to two bonding substrates carry out alignment adjust the step of several times in: firstly, repeatedly it is described along first direction
Alignment adjust several times, and when the active force is reached maximum value position corresponding to two bonding substrates as the
Alignment position on one direction；Then, it repeats the alignment in a second direction to adjust several times, and the active force is reached
Position corresponding to two bonding substrates is as the alignment position in second direction when maximum value.
3. forming method as claimed in claim 2, which is characterized in that several times in the alignment regulating step, define adjacent
The alignment regulating step described three times be followed successively by the first, second and third alignment regulating step according to time order and function；
The initial alignment position in the third alignment regulating step is located at: described in the first and second alignment regulating step
Near the initial alignment position corresponding to the larger step of active force.
4. forming method as described in claim 1, which is characterized in that make the upper table of the metal pad of two bonding substrates
The method that face generates induced charge includes: that the back side of the bonding substrate is adsorbed on electrostatic chuck, makes the metal pad
Upper surface have induced charge.
5. forming method as claimed in claim 4, which is characterized in that the absolute value of voltage for being applied to the electrostatic chuck is
500V to 20000V.
6. forming method as described in claim 1, which is characterized in that is produced from the metal pad upper surface of two bonding substrates
Raw induced charge is electrically identical.
7. forming method as described in claim 1, which is characterized in that after alignment, make the metal of two bonding substrates
The induced charge that pad upper surface generates is electrically on the contrary, one of them described substrate that is bonded is in the attraction masterpiece of the induced charge
With it is lower to described in another bonding substrate it is close；
When two bonding substrates contact, described two bonding substrates are bonded together.
8. forming method as described in claim 1, which is characterized in that the bonding substrate also has positioned at positive insulation
Layer, adjacent two metal pad are separated by the insulating layer.
9. forming method as claimed in claim 8, which is characterized in that the metal pad protrudes from the surface of insulating layer.
10. forming method as claimed in claim 9, which is characterized in that the protrusion height of the metal pad be 50 angstroms extremely
1000 angstroms.
11. forming method as described in any one of claim 1 to 10, which is characterized in that the material of the metal pad is copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510006918.1A CN105826228B (en) | 2015-01-07 | 2015-01-07 | The forming method of three-dimension packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510006918.1A CN105826228B (en) | 2015-01-07 | 2015-01-07 | The forming method of three-dimension packaging structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105826228A CN105826228A (en) | 2016-08-03 |
| CN105826228B true CN105826228B (en) | 2019-01-22 |
Family
ID=56513930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510006918.1A Active CN105826228B (en) | 2015-01-07 | 2015-01-07 | The forming method of three-dimension packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105826228B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI699142B (en) | 2019-04-22 | 2020-07-11 | 欣興電子股份有限公司 | Multilayer circuit board structure and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1286411A (en) * | 1999-08-31 | 2001-03-07 | 夏普公司 | Substrate binding method and device, and method for mfg. LCD |
| TW200707612A (en) * | 2005-04-13 | 2007-02-16 | Rambus Inc | Semiconductor device with self-aligning contactless interface |
| CN1325981C (en) * | 2002-03-20 | 2007-07-11 | Lg.菲利浦Lcd株式会社 | Working platform structure of binding machine and its control method |
-
2015
- 2015-01-07 CN CN201510006918.1A patent/CN105826228B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1286411A (en) * | 1999-08-31 | 2001-03-07 | 夏普公司 | Substrate binding method and device, and method for mfg. LCD |
| CN1325981C (en) * | 2002-03-20 | 2007-07-11 | Lg.菲利浦Lcd株式会社 | Working platform structure of binding machine and its control method |
| TW200707612A (en) * | 2005-04-13 | 2007-02-16 | Rambus Inc | Semiconductor device with self-aligning contactless interface |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105826228A (en) | 2016-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10567886B2 (en) | Sound transducer structure and method for manufacturing a sound transducer structure | |
| US11407636B2 (en) | Inter-poly connection for parasitic capacitor and die size improvement | |
| CN102124562B (en) | Method and device for manufacturing 3D integrated circuit device using interface wafer as permanent carrier | |
| Zoschke et al. | Hermetic wafer level packaging of MEMS components using through silicon via and wafer to wafer bonding technologies | |
| CN108117035A (en) | Semiconductor integrated device with electric contact and corresponding manufacturing process between stacked die | |
| US20230215744A1 (en) | Apparatus for bonding substrates having a substrate holder with holding fingers and method of bonding substrates | |
| TWI633290B (en) | Micro feedback-chamber sensor and method of manufacturing such sensor | |
| CN105826228B (en) | The forming method of three-dimension packaging structure | |
| CN106847717A (en) | Eutectic bonding method and semiconductor device | |
| KR101931358B1 (en) | Jig and manufacturing method thereof and flip chip bonding method for chips composing ultrasound probe using jig | |
| CN106800273A (en) | Method for forming mark on back of substrate | |
| WO2015169249A1 (en) | Capacitive pressure sensor and manufacturing method therefor | |
| CN110451451B (en) | Microelectromechanical sensor and method for manufacturing a microelectromechanical sensor | |
| CN104773706B (en) | Silica-based magnetic material substrate fabrication method | |
| US10267822B2 (en) | Sensor having particle barrier | |
| TWI620280B (en) | Method for preparing ceramic package substrate with copper-plated dam | |
| EP3091570B1 (en) | A semiconductor power device and a method of assembling a semiconductor power device | |
| CN107946283B (en) | Wafer slide bonding structure and method for TSV exposure by using same | |
| CN107770706B (en) | Microphone sensor and preparation method thereof | |
| JP2004317339A (en) | Capacitance type external force detection device | |
| CN111918190A (en) | MEMS microphone, preparation method thereof and electronic device | |
| CN111435701A (en) | Component semiconductor structure | |
| Kim et al. | Efficient wafer-level edge-tracing technique for 3-D interconnection of stacked die |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |