CN105826228A - Formation method of three-dimensional packaging structure - Google Patents
Formation method of three-dimensional packaging structure Download PDFInfo
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- CN105826228A CN105826228A CN201510006918.1A CN201510006918A CN105826228A CN 105826228 A CN105826228 A CN 105826228A CN 201510006918 A CN201510006918 A CN 201510006918A CN 105826228 A CN105826228 A CN 105826228A
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Abstract
The invention relates to a formation method of a three-dimensional packaging structure. The formation method comprises the steps of providing two bonding bases with a metal bonding pad at the obverse side, wherein the obverse sides of the two bonding bases are oppositely arranged at an interval, enabling the upper surfaces of the metal bonding pads of the two bonding bases to generate induced charge, finding corresponding positions of the two bonding bases when an acting force between the induced charge on the two bonding bases reaches the maximum, using the positions of the two bonding bases when the acting force is the maximum to act as alignment positions, aligning the metal bonding pads on the two bonding bases at the alignment positions, and bonding the two bonding bases together after alignment. The formation method provided by the invention solves a problem in the prior art that the alignment precision of the two bonding bases is low.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the forming method of a kind of three-dimension packaging structure.
Background technology
Along with microelectronic component high integration, the requirement of multifunction, existing two-dimensional package technology is difficult to meet encapsulation requirement, and three-dimension packaging has, and size is little, lightweight, reduce the advantages such as signal delay, is just becoming the mainstream technology of microelectronic device package.Bonding is the critical process realizing three-dimension packaging, and the bonding method being applied to three-dimension packaging has multiple, and one of which is metal-metal bonding.A kind of existing method utilizing metal-metal bonding method to form three-dimension packaging structure includes:
As shown in Figure 1, it is provided that at the bottom of two bonding radicals 1, at the bottom of bonding radical, 1 has the metal pad 10 being positioned at front and the insulating barrier 11 separated by adjacent two metal pads 10；The vis-a-vis interval of 1 at the bottom of two bonding radicals is arranged, according to the mechanically mobile bonding substrate 1 of the alignment mark (not shown) at the bottom of two bonding radicals 1, so that the metal pad 10 of 1 is directed at the bottom of two bonding radicals；As shown in Figure 2, after alignment, along with bonding radical at the bottom of 1 the direction of front vertical, mechanically move at the bottom of one of them bonding radical 1 until the interval between 1 at the bottom of two bonding radicals eliminates, then it is bonded together at the bottom of two bonding radicals 1, in bonding process, under uniform temperature and pressure effect, at the bottom of two bonding radicals between the interface atoms of the metal pad 10 on 1 phase counterdiffusion and realize bonding so that at the bottom of two bonding radicals, 1 is fixed together.
But, finding in actual manufacture process, the forming method of above-mentioned three-dimension packaging structure there is problems in that on time, and at the bottom of two bonding radicals, 1 alignment precision obtained according to alignment mark is relatively low；After alignment, at the bottom of one of them bonding radical mobile 1 until during interval between 1 at the bottom of two bonding radicals eliminates, at the bottom of this bonding radical, 1 easily rocks on the direction vertical with moving direction, making when at the bottom of two bonding radicals, being spaced between 1 eliminates, the alignment precision of 1 at the bottom of two bonding radicals is less than the alignment precision obtained in alignment procedures before.
Along with the raising of microelectronic component integrated level, the size of metal pad 10 is more and more less, density is increasing, distance between adjacent two metal pads 10 is more and more less.If the alignment precision of the metal pad 10 at the bottom of two bonding radicals on 1 is relatively low, then it is easy to occur problems with: the metal pad 10 that wherein metal pad 10 on 1 at the bottom of a bonding radical is not only corresponding with at the bottom of another bonding radical 1 contacts electrical connection, also neighbouring with this corresponding metal pad 10 metal pad 10 contacts electrical connection, causes short circuit；Wherein the metal pad 10 on 1 at the bottom of a bonding radical is very close to the neighbouring metal pad 10 (both non-physical contacts) of metal pad 10 corresponding at the bottom of another bonding radical 1, owing to the metal in metal pad 10 has in insulating barrier 11 character of diffusion, therefore the metal pad 10 on 1 at the bottom of a bonding radical may be short-circuit by the metal pad 10 that metal pad 10 that the metal that is diffused in insulating barrier 11 is corresponding with at the bottom of another bonding radical 1 is neighbouring.
Summary of the invention
The problem to be solved in the present invention is: in the forming method of existing three-dimension packaging structure, the alignment precision at the bottom of two bonding radicals is relatively low, is susceptible to two problems being bonded the short circuit of suprabasil metal pad.
For solving the problems referred to above, the invention provides the forming method of a kind of three-dimension packaging structure, including:
Thering is provided at the bottom of two bonding radicals, have the metal pad being positioned at front at the bottom of described bonding radical, the vis-a-vis interval at the bottom of two described bonding radicals is arranged；
The upper surface making the metal pad at the bottom of two described bonding radicals produces induced charge；
The intermolecular forces finding two suprabasil induced charges of described bonding reach during maximum at the bottom of two described bonding radicals corresponding to position, using the position at the bottom of two described bonding radicals during described active force maximum as alignment position, in described alignment position, said two is bonded suprabasil metal pad alignment；
After alignment, it is bonded together at the bottom of said two bonding radical.
Alternatively, the method finding described alignment position is: repeat carrying out the step of alignment regulation at the bottom of two described bonding radicals several times, the step of described alignment regulation includes: make one of them described bonding radical baseplane move to initial alignment position, measuring the active force between two suprabasil induced charges of described bonding in described initial alignment position, the described initial alignment position in each described alignment regulating step is different.
Alternatively, the step of described alignment regulation includes: alignment regulation in the first direction and the regulation of alignment in a second direction, described first direction is vertical with second direction and all parallel with the described back side, and the suprabasil metal pad of described bonding is spaced along described first direction, second direction；
Described alignment in the first direction is adjusted to: makes to move to initial alignment position along described first direction at the bottom of one of them described bonding radical, measures the active force between two suprabasil induced charges of described bonding in described initial alignment position；
Described alignment in a second direction is adjusted to: makes to move to initial alignment position along described second direction at the bottom of one of them described bonding radical, measures the active force between two suprabasil induced charges of described bonding in described initial alignment position；
Repeat to carry out at the bottom of two described bonding radicals alignment regulation step several times in: first, alignment in the first direction described in repetition regulates several times, and the position corresponding to being reached by described active force during maximum at the bottom of two described bonding radicals is as the alignment position on first direction；Then, alignment in a second direction described in repetition regulates several times, and the position corresponding to being reached by described active force during maximum at the bottom of two described bonding radicals is as the alignment position in second direction.
Alternatively, in the most described alignment regulating step, define adjacent three time described alignment regulating step and be followed successively by first, second and third alignment regulating step according to time order and function；
Described initial alignment position in described 3rd alignment regulating step is positioned at: near the described initial alignment position corresponding to step that described in described first and second alignment regulating step, active force is bigger.
Alternatively, the upper surface making the metal pad at the bottom of two described bonding radicals produces the method for induced charge and includes: is adsorbed on electrostatic chuck at the back side at the bottom of described bonding radical, makes the upper surface of described metal pad have induced charge.
Alternatively, the absolute value of voltage being applied to described electrostatic chuck is 500V to 20000V.
Alternatively, the induced charge that the metal pad upper surface at the bottom of two described bonding radicals produces is the most identical.
Alternatively, after alignment, the induced charge making the metal pad upper surface at the bottom of two described bonding radicals produce is electrically contrary, to close at the bottom of bonding radical another described under the captivation effect of described induced charge at the bottom of one of them described bonding radical；
When two described bonding substrate contacts, it is bonded together at the bottom of said two bonding radical.
Alternatively, also having the insulating barrier being positioned at front at the bottom of described bonding radical, described in adjacent two, metal pad is separated by described insulating barrier.
Alternatively, described metal pad protrudes from the surface of insulating barrier.
Alternatively, the protrusion height of described metal pad is 50 angstroms to 1000 angstroms.
Alternatively, the material of described metal pad is copper.
Compared with prior art, technical scheme has the advantage that
In the forming method of three-dimension packaging structure provided by the present invention, by two suprabasil metal pads of bonding on time, the upper surface at the metal pad at the bottom of two bonding radicals produces induced charge.Based at the bottom of two bonding radicals during the relative position difference on the direction at the back side being parallel at the bottom of bonding radical, the different principle of two active forces being bonded between suprabasil induced charges, find active force reach during maximum at the bottom of two bonding radicals corresponding to position, this position is alignment position.Compared with the method realizing at the bottom of two bonding radicals alignment in prior art according to alignment mark, in technical solution of the present invention, the alignment precision at the bottom of two bonding radicals is higher.
Accompanying drawing explanation
Fig. 1 is the alignment schematic diagram at the bottom of two bonding radicals being currently used for being formed three-dimension packaging structure；
Fig. 2 is to be currently used for forming the schematic diagram being bonded together at the bottom of two bonding radicals of three-dimension packaging structure；
Fig. 3 is for the alignment schematic diagram at the bottom of two bonding radicals forming three-dimension packaging structure in the first embodiment of the present invention；
Fig. 4 is two bonding suprabasil metal pad alignment schematic diagrams in the first direction in the first embodiment of the present invention；
Fig. 5 is two bonding suprabasil metal pad alignment schematic diagrams in a second direction in the first embodiment of the present invention；
Fig. 6 is the schematic diagram being bonded together at the bottom of two bonding radicals shown in Fig. 3；
Fig. 7 is for the alignment schematic diagram at the bottom of two bonding radicals forming three-dimension packaging structure in the second embodiment of the present invention.
Detailed description of the invention
As it was previously stated, the technical problem to be solved in the present invention is: in the forming method of existing three-dimension packaging structure, the alignment precision at the bottom of two bonding radicals is relatively low, it is susceptible to two problems being bonded the short circuit of suprabasil metal pad.
Specifically, in the forming method of three-dimension packaging structure provided by the present invention, by two suprabasil metal pads of bonding on time, the upper surface at the metal pad at the bottom of two bonding radicals produces induced charge.Based at the bottom of two bonding radicals during the relative position difference on the direction at the back side being parallel at the bottom of bonding radical, the different principle of two active forces being bonded between suprabasil induced charges, find active force reach during maximum at the bottom of two bonding radicals corresponding to position, this position is alignment position.After determining the alignment position at the bottom of two bonding radicals, can be bonded together at the bottom of two bonding radicals, it is to avoid two problems being bonded the short circuit of suprabasil metal pad occur.
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with the accompanying drawings the specific embodiment of the present invention is described in detail.
First embodiment
As shown in Figure 3, it is provided that at the bottom of two bonding radicals 10, at the bottom of bonding radical, 10 have the metal pad 100 being positioned at front, and at the bottom of two bonding radicals, the vis-a-vis interval of 10 is arranged, and define at the bottom of two bonding radicals and to be spaced apart H between 10.
At the bottom of bonding radical, 10 in addition to having metal pad 100, also has Semiconductor substrate 110 and the insulating barrier 120 being positioned in Semiconductor substrate 110, and at the bottom of bonding radical, arbitrary neighborhood two metal pad 100 is separated by insulating barrier 120 on 10.
The Semiconductor substrate 110 of 10 at the bottom of two bonding radicals has been respectively formed on circuit (not shown), and metal pad 100 electrically connects with the described circuit in Semiconductor substrate 110.In the present embodiment, described three-dimension packaging structure is cmos image sensor, and the circuit in the Semiconductor substrate 110 of 10 at the bottom of one of them bonding radical is photosensitive circuit, and the circuit in the Semiconductor substrate 110 of 10 at the bottom of another bonding radical is data processing circuit.In other embodiments, described three-dimension packaging structure can also be other devices, such as MEMS (Micro-Electro-MechanicalSystem, MEMS).
In the present embodiment, Semiconductor substrate 110 is silicon substrate.In other embodiments, Semiconductor substrate 110 can also be for other conventional semi-conducting materials.
In the present embodiment, the material of insulating barrier 120 is silicon oxide.In other embodiments, insulating barrier 120 can also be other insulant, such as silicon nitride, silicon oxynitride etc..
In the present embodiment, the material of metal pad 100 is copper.In other embodiments, metal pad 100 can also be other metal materials, such as copper alloy.
In the present embodiment, metal pad 100 protrudes from the surface of insulating barrier 120.In order to be obtained in that good bonding effect in follow-up bonding steps, in the present embodiment, the protrusion height of metal pad 100 is set to 50 angstroms to 1000 angstroms.In other embodiments, the protrusion height of metal pad 100 can also do other adjustment adapted according to actual needs.In other embodiments, metal pad 100 can also flush with the surface of insulating barrier 120.
In the present embodiment, at the bottom of two bonding radicals, the size of the metal pad 100 on 10 differs.In other embodiments, at the bottom of two bonding radicals, the size of the metal pad 100 on 10 can also be identical.
It should be noted that in this step, as long as making the vis-a-vis interval of at the bottom of two bonding radicals 10 arrange, whether the metal pad 100 of 10 at the bottom of two bonding radicals being directed at and does not limit requirement.
In the present embodiment, when at the bottom of two bonding radicals, the vis-a-vis interval of 10 is arranged, at the bottom of bonding radical, the back side S of 10 adsorbs on slide holder.In the present embodiment, described slide holder is electrostatic chuck 20 (e-chuck).In other embodiments, described slide holder can also be vacuum cup.
With continued reference to shown in Fig. 3, the upper surface of the metal pad 100 of 10 at the bottom of two bonding radicals is made to produce induced charge.
Absorption principle according to electrostatic chuck 20, when at the bottom of bonding radical, the back side S absorption of 10 is on electrostatic chuck 20, electrostatic chuck 20 is applied in the upper surface (i.e. along the thickness direction of 10 at the bottom of bonding radical away from the surface of back side S) of the metal pad 100 of at the bottom of voltage, and bonding radical 10 induced charge.
In the present embodiment, the voltage that two electrostatic chucks 20 are applied in is voltage of the same race, is negative voltage, and the upper surface of the metal pad 100 of 10 at the bottom of two bonding radicals produces induced charge of the same race, is negative charge.When electrostatic chuck 20 is applied in negative voltage, the back side S being attracted at the bottom of the bonding radical on electrostatic chuck 20 10 produces positive charge of inducting, and the upper surface of metal pad 100 produces negative charge of inducting.
In other embodiments, the voltage that two electrostatic chucks 20 are applied in can also be positive voltage, and now, at the bottom of two bonding radicals, the upper surface of the metal pad 100 of 10 all produces positive charge of inducting.
When the vis-a-vis interval of 10 is arranged at the bottom of two bonding radicals, owing to the upper surface of the metal pad 100 of 10 at the bottom of two bonding radicals has all produced induced charge, therefore active force can be there is between the induced charge of 10 at the bottom of two bonding radicals.In the present embodiment, owing at the bottom of two bonding radicals, the induced charge of 10 is like charges, therefore this active force is repulsive force.
During the alignment precision difference of the metal pad 100 on 10 at the bottom of two bonding radicals, i.e., during the 10 relative positions on the direction that back side S is parallel at the bottom of two bonding radicals different (now interval between 10 at the bottom of two bonding radicals is maintained as H), at the bottom of two bonding radicals, the described active force between 10 differs.When at the bottom of two bonding radicals, the alignment precision of 10 is the highest, at the bottom of two bonding radicals, the described active force between 10 is the biggest；Otherwise, when at the bottom of two bonding radicals, the alignment precision of 10 is the lowest, at the bottom of two bonding radicals, the described active force between 10 is the least.
Based on above-mentioned principle, in the inventive solutions, after the upper surface of the metal pad 100 of 10 at the bottom of two bonding radicals produces induced charge, the intermolecular forces finding at the bottom of two bonding radicals the induced charge on 10 reaches during maximum the position at the bottom of two bonding radicals corresponding to 10, using the position of 10 at the bottom of two bonding radicals during described active force maximum as alignment position, at the bottom of described alignment position is by two bonding radicals, the metal pad 100 on 10 is directed at.That is, technical scheme determines the alignment position of the metal pad 100 of 10 at the bottom of two bonding radicals according to described amount of force between 10 at the bottom of two bonding radicals.
Specifically, in the present invention, repeat to carry out the step of alignment regulation at the bottom of two bonding radicals 10 several times, the step of described alignment regulation includes: make 10 planar movements at the bottom of one of them bonding radical to initial alignment position, described initial alignment position at the bottom of two bonding radicals 10 on induced charge between active force measure, described initial alignment position in each described alignment regulating step is different, described active force reaches during maximum at the bottom of two bonding radicals the position corresponding to 10 as alignment position.In the present invention, at the bottom of bonding radical, 10 refer to as planar movement: at the bottom of bonding radical, 10 only do the movement along the direction parallel for back side S with at the bottom of bonding radical 10, and wherein during 10 planar movements at the bottom of a bonding radical, at the bottom of two bonding radicals, the interval of 10 remains H.
Alignment position in order to ensure the metal pad 100 of 10 at the bottom of two bonding radicals obtained has higher precision, the number of times repeating to carry out alignment regulation at the bottom of two bonding radicals 10 should be the most more, and front and back the distance between the described initial alignment position in twice alignment regulating step should be smaller.
In each described alignment regulating step, all record the position of at the bottom of two bonding radicals 10 and at the described active force obtained measured by this position.So, repeat to carry out at the bottom of two bonding radicals 10 the step of alignment regulation several times after, the relative size of the active force that measurement is obtained in each described alignment regulating step can be compared, and find out the position of 10 at the bottom of the described active force of maximum and corresponding to described active force two bonding radicals of maximum.
It should be noted that, in the inventive solutions, limiting, as long as making the metal pad 100 at the bottom of the bonding radical of two, described initial alignment position 10 not have the biggest deviation the described initial alignment position in alignment regulating step is the most concrete.In order to enable described initial alignment position closer to described alignment position, described initial alignment position can be determined according to the alignment mark (not shown) at the bottom of two bonding radicals 10.
In the present embodiment, in the most described alignment regulating step, define adjacent three time described alignment regulating step and be followed successively by the first alignment regulating step, the second alignment regulating step, the 3rd alignment regulating step according to time order and function；Described initial alignment position in described 3rd alignment regulating step is positioned at: near the described initial alignment position corresponding to step that described in described first alignment regulating step and the second alignment regulating step, active force is bigger.I.e., if the described active force in described first alignment regulating step is positioned near the described initial alignment position in described first alignment regulating step more than the described active force in described second alignment regulating step, the described initial alignment position in the most described 3rd alignment regulating step.Otherwise, if the described active force in described first alignment regulating step is positioned near the described initial alignment position in described second alignment regulating step less than the described active force in described second alignment regulating step, the described initial alignment position in the most described 3rd alignment regulating step.
So, in the most described alignment regulating step, described initial alignment position in each described alignment regulating step carried out after alignment regulating step for the first time and second time alignment regulating step, can determine according to the described active force being directed in regulating step described in first twice, make the described initial alignment position determined can become closer to the alignment position of at the bottom of bonding radical 10, thus decrease the number of times of described alignment regulating step, improve the efficiency of alignment regulation.
In the present embodiment, described alignment regulating step includes: the alignment regulation of the Y in a second direction shown in the alignment regulation of the X in the first direction shown in Fig. 4 and Fig. 5, first direction X is vertical with second direction Y, and all parallel with the back side S of 10 at the bottom of bonding radical, at the bottom of bonding radical, metal pad 100 X in the first direction on 10, second direction Y are spaced.
As shown in Figure 4, the alignment of described X in the first direction is adjusted to: make at the bottom of one of them bonding radical 10 in the first direction X move to initial alignment position, described initial alignment position at the bottom of two bonding radicals 10 on induced charge between active force measure.
As it is shown in figure 5, the alignment of described Y in a second direction is adjusted to: make at the bottom of one of them bonding radical 10 in a second direction Y move to initial alignment position, described initial alignment position at the bottom of two bonding radicals 10 on induced charge between active force measure.
Repeat to carry out at the bottom of two bonding radicals 10 the step of alignment regulation several times in: first, the alignment repeating X in the first direction regulates several times, and described active force is reached during maximum at the bottom of two bonding radicals the position corresponding to 10 as the alignment position on first direction X, i.e., when performing the alignment regulating step of X in the first direction, at the bottom of two bonding radicals, 10 positions in second direction Y keep constant；Then, the alignment repeating Y in a second direction regulates several times, and described active force is reached during maximum at the bottom of two bonding radicals the position corresponding to 10 as the alignment position in second direction Y, i.e., when performing the alignment regulating step of Y in a second direction, at the bottom of two bonding radicals 10 in a first direction the position on X keep constant.In other words, in the technical scheme of the present embodiment, first find out at the bottom of two bonding radicals 10 alignment positions on X in a first direction, then find out the 10 alignment position in second direction Y at the bottom of two bonding radicals.
During described in several times, the alignment of X regulates in the first direction, described initial alignment position in each described alignment regulating step carried out after alignment regulating step for the first time and second time alignment regulating step, can determine according to the described active force being directed in regulating step described in first twice, make the described initial alignment position determined can become closer at the bottom of bonding radical 10 alignment positions on X in a first direction, thus described in decreasing, the alignment of X regulates number of times in the first direction, improves the efficiency of alignment regulation.With reference to Fig. 4, when at the bottom of one of them bonding radical 10 move to position shown in Fig. 4 (b) from the X in the first direction of the position shown in Fig. 4 (a) time, the position of 10 at the bottom of this bonding radical becomes closer at the bottom of bonding radical 10 alignment positions on X in a first direction.
During described in several times, the alignment of Y regulates in a second direction, described initial alignment position in each described alignment regulating step carried out after alignment regulating step for the first time and second time alignment regulating step, can determine according to the described active force being directed in regulating step described in first twice, make the described initial alignment position determined can become closer to the 10 alignment position in second direction Y at the bottom of bonding radical, thus described in decreasing, the alignment of Y regulates number of times in a second direction, improves the efficiency of alignment regulation.With reference to Fig. 5, when at the bottom of one of them bonding radical 10 move to position shown in Fig. 5 (b) from the Y in a second direction of the position shown in Fig. 5 (a) time, the position of 10 at the bottom of this bonding radical becomes closer to the 10 alignment position in second direction Y at the bottom of bonding radical.
Repeat, in the alignment regulation several times of X or second direction Y in the first direction, 10 can be moved at the bottom of same bonding radical all the time, it is also possible to alternately move at the bottom of two bonding radicals 10.
In a particular embodiment, repeat the alignment regulation of X in the first direction and several times and repeat in the alignment regulation several times of Y in a second direction, be all to move at the bottom of same bonding radical 10 all the time, i.e. 10 remain transfixion at the bottom of another bonding radical.During determining the alignment position of 10 at the bottom of two bonding radicals:
First, move at the bottom of one of them bonding radical 10 so that it is at the bottom of a bonding radical 10 relative at the bottom of another bonding radical 10 in a first direction the position on X change, and the active force between the induced charge at the bottom of two bonding radicals 10 is measured.When described active force reaches maximum, using the position corresponding at the bottom of two bonding radicals 10 as the alignment position on first direction X, under this position, at the bottom of two bonding radicals, 10 achieve the alignment of first direction X.
Then, continue to move at the bottom of same bonding radical 10 so that it is in 10 change relative to 10 positions in second direction Y at the bottom of another bonding radical at the bottom of a bonding radical, and the active force between the induced charge at the bottom of two bonding radicals 10 is measured.When described active force reaches maximum, using the position corresponding at the bottom of two bonding radicals 10 as the alignment position in second direction Y, under this position, at the bottom of two bonding radicals, 10 achieve the alignment of second direction Y.
In actual manufacture process, at the bottom of bonding radical, the protrusion height of each metal pad 100 is the most not consistent on 10.By in metal pad 100 alignment procedures at the bottom of two bonding radicals 10, when making 10 planar movements at the bottom of one of them bonding radical to initial alignment position, owing at the bottom of two bonding radicals, the induced charge of the metal pad 100 on 10 is contrary, therefore when metal pad 100 higher on 10 at the bottom of two bonding radicals is close together, repulsive force between induced charge can constitute at the bottom of two bonding radicals 10 and continue close resistance, and then prevents at the bottom of two bonding radicals the problem that on 10, higher metal pad 100 bumps against.
It is applied to the voltage swing of electrostatic chuck 20 and can directly affect the induced charge produced on the metal pad 100 of at the bottom of bonding radical 10, and then have impact at the bottom of two bonding radicals the described amount of force between 10.It has been investigated that, if the absolute value of voltage being applied to electrostatic chuck 20 is too small, the induced charge produced on metal pad 100 can be caused very few, in turn result at the bottom of two bonding radicals the described active force between 10 too small.When at the bottom of two bonding radicals, the relative position of 10 changes, the variable quantity of described active force between 10 at the bottom of two bonding radicals also can be the least, so, the certainty of measurement of described active force can be proposed more strict requirements.It addition, when described active force between 10 at the bottom of two bonding radicals is too small, the measurement to this active force also becomes increasingly difficult.
It has been investigated that, when being applied to the absolute value of voltage of electrostatic chuck 20 more than 500V it can be avoided that the generation of the problems referred to above.Certainly, the absolute value of voltage being applied to electrostatic chuck 20 can not be excessive, otherwise can waste the energy, increases cost.In the present embodiment, the absolute value of voltage of electrostatic chuck 20 it is applied to less than 20000V.
It should be noted that, in the inventive solutions, the method making the upper surface of the metal pad 100 of at the bottom of bonding radical 10 produce induced charge should not be limited to above-described embodiment, it would however also be possible to employ additive method makes the upper surface of metal pad 100 produce induced charge.For example, it is possible to directly apply voltage at the bottom of bonding radical 10, so that the upper surface of metal pad 100 produces induced charge.
In the present embodiment, the active force method measured at the bottom of two bonding radicals between the induced charge of 10 is: utilize a fixing device to be fixed by the outer peripheral face of 10 at the bottom of bonding radical, fix one at the back side of 10 at the bottom of bonding radical and be positioned at the column of 10 middle positions at the bottom of bonding radical, under active force effect between the induced charge of 10 at the bottom of two bonding radicals, at the bottom of bonding radical, 10 can produce deformation, owing to the height (with the size on the front vertical direction at the bottom of bonding radical) of described column associates with described deformation, described deformation associates with described active force, therefore, described active force i.e. it is obtained in that by measuring the height of described column.Certainly, in other embodiments, it is also possible to measure described active force by additive method.
As shown in Figure 6, after alignment so that it is in 10 move along the direction with described front vertical at the bottom of a bonding radical, be bonded together at the bottom of two bonding radicals 10, to form three-dimension packaging structure.
nullIn the present embodiment，Make at the bottom of one of them bonding radical 10 along with the method that the direction of described front vertical is moved be: the induced charge making metal pad 100 upper surface of at the bottom of two bonding radicals 10 produce is the most contrary，At the bottom of one of them bonding radical, 10 is close at the bottom of another bonding radical 10 under the captivation effect of described induced charge，At the bottom of two bonding radicals 10 near during，Captivation between induced charge can guide at the bottom of one of them bonding radical 10 to move，10 are prevented at the bottom of this bonding radical to rock on the direction vertical with moving direction，Make when at the bottom of two bonding radicals, being spaced between 10 eliminates，The alignment precision of 10 at the bottom of two bonding radicals keeps consistent with the alignment precision obtained in alignment procedures before，So，At the bottom of by two bonding radicals 10 be bonded together after，It can be avoided that the problem of metal pad 100 short circuit on 10 occurs at the bottom of two bonding radicals.
Second embodiment
Difference between second embodiment and first embodiment is: in a second embodiment, as shown in Figure 7, the voltage of two electrostatic chuck 20 applyings is xenogenesis voltage, one of them be positive voltage, another be negative voltage, the upper surface of the metal pad 100 of 10 at the bottom of two bonding radicals produces xenogenesis induced charge, one of them be positive charge, another be negative charge.
When electrostatic chuck 20 is applied in positive voltage, the back side S being attracted at the bottom of the bonding radical on electrostatic chuck 20 10 produces negative charge of inducting, and the upper surface of metal pad 100 produces positive charge of inducting.When electrostatic chuck 20 is applied in negative voltage, the back side S being attracted at the bottom of the bonding radical on electrostatic chuck 20 10 produces positive charge of inducting, and the upper surface of metal pad 100 produces negative charge of inducting.
In the present embodiment, owing at the bottom of two bonding radicals, the induced charge of 10 is xenogenesis electric charge, therefore active force between the induced charge on 10 at the bottom of two bonding radicals is captivation.
In a second embodiment, the step process several times repeating to carry out alignment regulation at the bottom of two bonding radicals 10 is referred to first embodiment, does not repeats them here.
It should be noted that, in a second embodiment, at the bottom of two bonding radicals between interval H should be maintained in safety range, to prevent from the bottom of two bonding radicals to puncture because of electric discharge between 10.
In first and second embodiment, the absolute value of voltage being applied to two electrostatic chucks 20 can be equal, it is also possible to unequal.
In the present invention, each embodiment uses laddering literary style, and emphasis describes the difference with previous embodiment, and the same section in each embodiment is referred to previous embodiment.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (12)
1. the forming method of a three-dimension packaging structure, it is characterised in that including:
Thering is provided at the bottom of two bonding radicals, have the metal pad being positioned at front at the bottom of described bonding radical, the vis-a-vis interval at the bottom of two described bonding radicals is arranged；
The upper surface making the metal pad at the bottom of two described bonding radicals produces induced charge；
The intermolecular forces finding two suprabasil induced charges of described bonding reach during maximum at the bottom of two described bonding radicals corresponding to position, using the position at the bottom of two described bonding radicals during described active force maximum as alignment position, in described alignment position, said two is bonded suprabasil metal pad alignment；
After alignment, it is bonded together at the bottom of said two bonding radical.
2. forming method as claimed in claim 1, it is characterised in that the method finding described alignment position is:
Repeat carrying out the step of alignment regulation at the bottom of two described bonding radicals several times, the step of described alignment regulation includes: make one of them described bonding radical baseplane move to initial alignment position, measuring the active force between two suprabasil induced charges of described bonding in described initial alignment position, the described initial alignment position in each described alignment regulating step is different.
3. forming method as claimed in claim 2, it is characterised in that the step of described alignment regulation includes:
Alignment regulation in the first direction and the regulation of alignment in a second direction, described first direction is vertical with second direction and all parallel with the described back side, and the suprabasil metal pad of described bonding is spaced along described first direction, second direction；
Described alignment in the first direction is adjusted to: makes to move to initial alignment position along described first direction at the bottom of one of them described bonding radical, measures the active force between two suprabasil induced charges of described bonding in described initial alignment position；
Described alignment in a second direction is adjusted to: makes to move to initial alignment position along described second direction at the bottom of one of them described bonding radical, measures the active force between two suprabasil induced charges of described bonding in described initial alignment position；
Repeat to carry out at the bottom of two described bonding radicals alignment regulation step several times in: first, alignment in the first direction described in repetition regulates several times, and the position corresponding to being reached by described active force during maximum at the bottom of two described bonding radicals is as the alignment position on first direction；Then, alignment in a second direction described in repetition regulates several times, and the position corresponding to being reached by described active force during maximum at the bottom of two described bonding radicals is as the alignment position in second direction.
4. forming method as claimed in claim 3, it is characterised in that in the most described alignment regulating step, define adjacent three time described alignment regulating step and be followed successively by first, second and third alignment regulating step according to time order and function；
Described initial alignment position in described 3rd alignment regulating step is positioned at: near the described initial alignment position corresponding to step that described in described first and second alignment regulating step, active force is bigger.
5. forming method as claimed in claim 1, it is characterized in that, the upper surface making the metal pad at the bottom of two described bonding radicals produces the method for induced charge and includes: is adsorbed on electrostatic chuck at the back side at the bottom of described bonding radical, makes the upper surface of described metal pad have induced charge.
6. forming method as claimed in claim 5, it is characterised in that the absolute value of voltage being applied to described electrostatic chuck is 500V to 20000V.
7. forming method as claimed in claim 1, it is characterised in that the induced charge that the metal pad upper surface at the bottom of two described bonding radicals produces is the most identical.
8. forming method as claimed in claim 1, it is characterized in that, after alignment, the induced charge making the metal pad upper surface at the bottom of two described bonding radicals produce is electrically contrary, to close at the bottom of bonding radical another described under the captivation effect of described induced charge at the bottom of one of them described bonding radical；
When two described bonding substrate contacts, it is bonded together at the bottom of said two bonding radical.
9. forming method as claimed in claim 1, it is characterised in that also having the insulating barrier being positioned at front at the bottom of described bonding radical, described in adjacent two, metal pad is separated by described insulating barrier.
10. forming method as claimed in claim 9, it is characterised in that described metal pad protrudes from the surface of insulating barrier.
11. forming methods as claimed in claim 10, it is characterised in that the protrusion height of described metal pad is 50 angstroms to 1000 angstroms.
12. forming methods as described in any one of claim 1 to 11, it is characterised in that the material of described metal pad is copper.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI699142B (en) * | 2019-04-22 | 2020-07-11 | 欣興電子股份有限公司 | Multilayer circuit board structure and manufacturing method thereof |
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| CN1286411A (en) * | 1999-08-31 | 2001-03-07 | 夏普公司 | Substrate binding method and device, and method for mfg. LCD |
| TW200707612A (en) * | 2005-04-13 | 2007-02-16 | Rambus Inc | Semiconductor device with self-aligning contactless interface |
| CN1325981C (en) * | 2002-03-20 | 2007-07-11 | Lg.菲利浦Lcd株式会社 | Working platform structure of binding machine and its control method |
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|---|---|---|---|---|
| CN1286411A (en) * | 1999-08-31 | 2001-03-07 | 夏普公司 | Substrate binding method and device, and method for mfg. LCD |
| CN1325981C (en) * | 2002-03-20 | 2007-07-11 | Lg.菲利浦Lcd株式会社 | Working platform structure of binding machine and its control method |
| TW200707612A (en) * | 2005-04-13 | 2007-02-16 | Rambus Inc | Semiconductor device with self-aligning contactless interface |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI699142B (en) * | 2019-04-22 | 2020-07-11 | 欣興電子股份有限公司 | Multilayer circuit board structure and manufacturing method thereof |
| US10736215B1 (en) | 2019-04-22 | 2020-08-04 | Unimicron Technology Corp. | Multilayer circuit board structure and manufacturing method thereof |
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