CN105823972A - Calculation method for minimal storage depth of organic field effect transistor (FET) memory - Google Patents
Calculation method for minimal storage depth of organic field effect transistor (FET) memory Download PDFInfo
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- CN105823972A CN105823972A CN201610145044.2A CN201610145044A CN105823972A CN 105823972 A CN105823972 A CN 105823972A CN 201610145044 A CN201610145044 A CN 201610145044A CN 105823972 A CN105823972 A CN 105823972A
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Abstract
The invention relates to a calculation method for the minimal storage depth of an electret type organic FET memory, and belongs to the technical field of memories in the semiconductor industry. The method comprises that the electret type organic FET memory of certain thickness is prepared; storage window data of the memory in different programming voltages is tested and extracted; the storage window data is fit linearly, and the minimal programming voltage needed by the polymer electret type organic FET memory is calculated; the electric field intensity of a polymer electret is calculated according to the minimal programming voltage; according to difference between the energy level of an organic semiconductor layer material and that of a polymer electret material, a minimal tunneling potential barrier is calculated; and according to the minimal tunneling potential barrier and the electric-field intensity, the minimal storage depth of the polymer electret type organic FET memory is calculated. The calculation method can be widely applied to electret type organic FET memories of different polymers and soluble micro molecules.
Description
Technical field
The invention belongs to semicon industry memory technology field, be specifically related to the computational methods of a kind of organic field effect tube memorizer minimum memory degree of depth.
Background technology
Along with the high speed development of modern information technologies, the information of magnanimity exchanges the indexs such as the processing speed to data, transmission speed, memory density and proposes urgent great demand.Storage product prepared by traditional inorganic semiconductor material, is difficult to meet these requirements.By contrast, the advantages such as the semi-conducting material such as organic polymer, little molecule has that raw material sources are wide, can carry out Electronic Structure Design, cheap, and have flexibility, can the feature that do not possesses of the Conventional inorganic semiconductor materials such as prepared by large area, prepared by low temperature, therefore apply it to, among the design of highdensity field-effect transistor memorizer (OFET), there is huge application prospect.
Current organic field effect tube memorizer, according to the material of its storage active layer, is divided into ferroelectric type, floating gate type and electret type three major types.Wherein ferroelectric type OFET is by the polarized state of grid voltage regulation ferroelectric material, it is achieved the record to information；Floating gate type OFET relies on metal, inorganic nano-particle or little molecule as charge-trapping center, it is achieved the storage to signal；, still there is dispute in its memory module of the OFET of electret type and mechanism, it is generally recognized that its electric charge is under the effect of Interface electric field, is stored in the interface of semiconductor layer and electret layer with the form of tunnelling, or inside electret layer, also or inside semiconductor layer.
Additionally, for ferroelectric type OFET, because its polarization relying on electric field changes storage state, because easily causing the destructive reading to information.And in the basic structure of floating gate type OFET, needing tunnel layer and floating gate layer, technique is relative complex.By contrast, the OFET simple in construction of electret type, can large area can be prepared by simple solution processing technique, therefore by the way of theory and combining is tested, calculate the storage position of electret type OFET memorizer and storage depth, will efficiently contribute to improve people for the research of this type memorizer and product design and optimization.
Therefore, for electret type OFET, calculate its minimum memory degree of depth and be very important.The minimum memory degree of depth how calculating electret type OFET is also to be badly in need of solving the technical problem that.
Summary of the invention
For existing electret type OFET memorizer problem encountered, the present invention proposes the computational methods of a kind of electret type organic field effect tube memorizer minimum memory degree of depth.The present invention does not increase large test technique, technical difficulty on the basis of existing universal test sign equipment, it is provided that a kind of simple method calculates minimum storage depth, has extremely strong universality.
In order to solve above-mentioned technical problem, the technical scheme that the present invention proposes is:
The computational methods of a kind of electret type organic field effect tube memorizer minimum memory degree of depth, it is characterised in that include step in detail below:
(1), preparing electret type organic field effect tube memorizer, electret thickness is d1, dielectric constant is k1, gate insulation layer thickness is d2, dielectric constant is k2；
(2), test and extract described memorizer at different program voltage VProgUnder memory window data Δ VTH；Described memory window data Δ VTH, referring to calculate threshold voltage value according to transfer curve, the threshold voltage after definition programming is memory window data with the difference of the threshold voltage absolute value of original state, farther includes at least to obtain 3-5 group memory window data；
(3), described memory window data being carried out linear fit, calculated thickness is d1Electret type organic field effect tube memorizer needed for minimum program voltage VProg-min；Described minimum program voltage VProg-min, refer to make Δ V according to memory window dataTH～VProgGraph of a relation, by Δ VTHCarry out after linear fit itself and VProgThe intersection point of axle, is defined as VProg-min；
(4), electric field intensity E in electret is calculated according to described minimum program voltageTH, make ETH=VProg-min/(d1+d2k1/k2)；
(5), according to the energy level difference of organic semiconductor layer material Yu electret, minimum tunneling barrier is calculated
(6), according to described minimum tunneling barrier and electric field intensity, minimum memory degree of depth d of electret type organic field effect tube memorizer is calculatedmin；Described minimum memory degree of depth dmin, it is defined as in certain thickness electret, under minimum program voltage, the depth capacity of electric charge tunnelling, make this value
Wherein, the electret layer in described organic field effect tube memorizer is selected from polymeric material or small molecule material.
Described a series of program voltage VProgIncluding positive and negative gate voltage and corresponding aided programming means (such as illumination), the absolute value of program voltage is incremented by with arithmetic progression form.During operation, with the semiconductor analysis instrument of potential pulse module, can be Agilent AgilentB1500A, Keithley KEITHLEY4200-SCS.
Described minimum tunneling barrierFor calculating the absolute difference that system is semiconductor layer and the lowest unoccupied molecular orbital (LUMO) of electret that carrier is electronics；For calculating the absolute difference that system is semiconductor layer and the highest occupied molecular orbital (HOMO) of electret that carrier is hole.
Described electret type organic field effect tube memorizer, has the feature that and includes including substrate, gate electrode, gate insulation layer, electret layer, organic active layer, source-drain electrode from bottom to up；
The material of described substrate is selected from highly doped silicon chip, sheet glass or plastics PET；
The material that described gate electrode uses is selected from highly doped silicon, aluminum, copper, silver, gold, titanium or tantalum；
The material that described gate insulation layer uses is selected from silicon dioxide, aluminium oxide, zirconium oxide, polystyrene PS or polyvinylpyrrolidone PVP, and the film thickness of described gate insulation layer is 300nm；
The film thickness of described electret layer is 30～100nm；
The material that described organic active layer uses is Benzo[b, aphthacene, titan bronze, titanium fluoride bronze, rubrene or anthracene；Described organic active layer uses thermal vacuum evaporation film-forming method film forming, covers and forms conducting channel on electret layer surface, and its thickness is 40～50nm；
Described source-drain electrode materials is metal or organic conductor material, and its thickness is 60～100nm.Preferably, the material of described source-drain electrode is copper.
There is advantages that
1, the present invention provides the computational methods of a kind of electret type organic field effect tube memorizer minimum memory degree of depth, can be on the premise of using the most general semiconductor analysis instrument test, need not increase extra analysis of test system, can preferably calculate the minimum memory degree of depth of electret type OFET, have higher calculating fineness and preferable effect of visualization；
2, the method for this calculating electret type OFET memorizer minimum memory degree of depth that the present invention provides, establish a simple physical model, can effectively analyze the memory mechanism of electret type OFET, improve the research worker cognition to electret type OFET storage component part physical layer, there is for design a kind of feasible thinking of offer of the organic memory of high storage density.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings the present invention is described further.
The electret type OFET memory construction schematic diagram that Fig. 1 is used by present example；
Fig. 2 is the schematic diagram calculating minimum program voltage provided according to the embodiment of the present invention 1；
Fig. 3 is the schematic diagram of the 2 minimum program voltages of the calculating provided according to embodiments of the present invention；
Detailed description of the invention
In order to be illustrated more clearly that the embodiment of the present application or technical scheme of the prior art, below in conjunction with embodiment and accompanying drawing, the present invention will be described in detail, it is mentioned that accompanying drawing be suitable only for following embodiment, for those of ordinary skill in the art, it is also possible to obtain other accompanying drawing according to the method mentioned in the present invention.But, protection scope of the present invention is not limited to following embodiment.
Embodiment 1
A kind of computational methods of the electret type organic field effect tube memorizer minimum memory degree of depth, including:
(1), preparing electret type organic field effect tube memorizer, its thickness is d1, dielectric constant sees k1=3.0, its structural representation is as shown in Figure 1；
Specifically include following steps: during actual preparation, laboratory room temperature is maintained at about 25 DEG C, and indoor humidity is saved in less than 30%.
A () configuration polymer polyethylene base carbazole (PVK) solution, is configured to solution, solubility 10mg/ml with 1 ' 2-dichloroethanes (DCE) as solvent using PVK；
B () selects surface d2The heavily doped silicon of=300nm silicon dioxide is as substrate and gate insulation layer, k2=3.9, use acetone, ethanol, deionized water respectively with 80KHZ ultrasonic cleaning 10 minutes, dry in the vacuum drying oven of 120 DEG C thereafter；
C process 3min in UV ozone put into by the substrate dried in step (b) by ()；
The solution configured in d substrate surface spin-coating step (a) that () is handled well in step (c), film thickness is 100nm；
E thin film that step (d) is prepared by () is put in 80 DEG C of vacuum constant temperature baking ovens and is dried, and cools down standby；
F () be vacuum evaporation organic semiconductor layer and source-drain electrode on the thin polymer film that step (e) is dried.Described vacuum evaporation semi-conducting material is Benzo[b, and evaporation rate isVacuum degree control is 5 × 10-4Below pa, controlling evaporated film thickness is 40～50nm；Described vacuum evaporation source-drain electrode is copper, evaporation rateControl thickness 60～100nm.
(2), carried out testing and extract described memorizer at different program voltage V by Agilent B1500 semiconductor analysis instrumentProgUnder memory window data Δ VTH；Described program voltage VProgIncluding positive and negative gate voltage and corresponding aided programming means (such as illumination), the absolute value of program voltage is incremented by with arithmetic progression form；Described memory window data Δ VTH, referring to calculate threshold voltage value according to transfer curve, the threshold voltage after definition programming is memory window data with the difference of the threshold voltage absolute value of original state, farther includes at least to obtain 3～5 groups of memory window data.
(3), described memory window data are carried out linear fit, as in figure 2 it is shown, minimum program voltage V needed for the electret type organic field effect tube memorizer that calculated thickness is dProg-min；Described minimum program voltage VProg-min, refer to make Δ V according to memory window dataTH～VProgGraph of a relation, by Δ VTHCarry out after linear fit itself and VProgThe intersection point of axle, is defined as VProg-min；According to Fig. 2, calculate PVK thick for 100nm as minimum program voltage required during OFET memorizer electret, for-48.6V.
(4), electric field intensity E in certain thickness electret is calculated according to described minimum program voltageTH；Described thickness be 100nm electret in electric field intensity be 1.46MV/cm-1。
(5), according to the energy level difference of organic semiconductor layer material Yu electret, minimum tunneling barrier is calculatedDescribed minimum tunneling barrierFor calculating the absolute difference that system is semiconductor layer and the lowest unoccupied molecular orbital (LUMO) of electret that carrier is electronics；For calculating the absolute difference that system is semiconductor layer and the highest occupied molecular orbital (HOMO) of electret that carrier is hole.
(6), according to described minimum tunneling barrier and electric field intensity, minimum memory degree of depth d of certain thickness electret type organic field effect tube memorizer is calculatedmin；Described minimum memory degree of depth dmin, it is defined as in certain thickness electret, under minimum program voltage, the depth capacity of electric charge tunnelling, make this valueThe electric field intensity calculated according to the present invention and the minimum memory degree of depth, when PVK thick for 100nm is as OFET memorizer electret, for 3.4nm, meet the tunneling theory numerical range reported.
Embodiment 2
A kind of computational methods of the electret type organic field effect tube memorizer minimum memory degree of depth, including:
(1), preparing electret type organic field effect tube memorizer, its thickness is d1, dielectric constant sees k1=3.0, its structural representation is as shown in Figure 1；
Specifically include following steps: during actual preparation, laboratory room temperature is maintained at about 25 DEG C, and indoor humidity is saved in less than 30%.
A () configuration polymer poly (9,9-dioctyl fluorene acene thiadiazoles) (F8BT) solution, is configured to solution, solubility 10mg/ml using F8BT toluene as solvent；
B () selects surface d2The heavily doped silicon of=300nm silicon dioxide is as substrate and gate insulation layer, k2=3.9, use acetone, ethanol, deionized water respectively with 80KHZ ultrasonic cleaning 10 minutes, dry in the vacuum drying oven of 120 DEG C thereafter；
C process 3min in UV ozone put into by the substrate dried in step (b) by ()；
The solution configured in d substrate surface spin-coating step (a) that () is handled well in step (c), film thickness is 30nm；
E thin film that step (d) is prepared by () is put in 80 DEG C of vacuum constant temperature baking ovens and is dried, and cools down standby；
F () be vacuum evaporation organic semiconductor layer and source-drain electrode on the thin polymer film that step (e) is dried.Described vacuum evaporation semi-conducting material is Benzo[b, and evaporation rate isVacuum degree control is 5 × 10-4Below pa, controlling evaporated film thickness is 40～50nm；Described vacuum evaporation source-drain electrode is copper, evaporation rateControl thickness 60～100nm.
(2), carried out testing and extract described memorizer at different program voltage V by Agilent B1500 semiconductor analysis instrumentProgUnder memory window data Δ VTH；
(3), described memory window data are carried out linear fit, as in figure 2 it is shown, minimum program voltage V needed for the electret type organic field effect tube memorizer that calculated thickness is dProg-min；Calculate F8BT thick for 30nm as minimum program voltage required during OFET memorizer electret, for-27.2V.
(4), electric field intensity E in certain thickness electret is calculated according to described minimum program voltageTH；Described thickness be 100nm electret in electric field intensity be 1.08MV/cm-1。
(5), according to the energy level difference of organic semiconductor layer material Yu electret, minimum tunneling barrier is calculated
(6), according to described minimum tunneling barrier and electric field intensity, minimum memory degree of depth d of certain thickness electret type organic field effect tube memorizer is calculatedmin.The electric field intensity calculated according to the present invention and the minimum memory degree of depth, when F8BT thick for 30nm is as OFET memorizer electret, for 8.3nm, meet the tunneling theory numerical range reported.
All test results show, the computational methods of the electret type organic field effect tube memorizer minimum memory degree of depth involved in the present invention, computation model has theory support, data reliability is high, and it is simple to calculate process operation, with low cost, it is adaptable to the organic field effect tube memorizer of current electret type.
The concrete technical scheme being not limited to described in above-described embodiment of invention, the technical scheme that all employing equivalents are formed is the protection domain of application claims.
Claims (6)
1. the computational methods of an electret type organic field effect tube memorizer minimum memory degree of depth, it is characterised in that include step in detail below:
(1), preparing electret type organic field effect tube memorizer, electret thickness is d1, dielectric constant is k1, gate insulation layer thickness is d2, dielectric constant is k2；
(2), test and extract described memorizer at different program voltage VProgUnder memory window data Δ VTH；Described memory window data Δ VTH, referring to calculate threshold voltage value according to transfer curve, the threshold voltage after definition programming is memory window data with the difference of the threshold voltage absolute value of original state, farther includes at least to obtain 3-5 group memory window data；
(3), described memory window data being carried out linear fit, calculated thickness is d1Electret type organic field effect tube memorizer needed for minimum program voltage VProg-min；Described minimum program voltage VProg-min, refer to make Δ V according to memory window dataTH～VProgGraph of a relation, by Δ VTHCarry out after linear fit itself and VProgThe intersection point of axle, is defined as VProg-min；
(4), electric field intensity E in electret is calculated according to described minimum program voltageTH, wherein, ETH=VProg-min/(d1+d2k1/k2)；
(5), according to the energy level difference of organic semiconductor layer material Yu electret, minimum tunneling barrier is calculated
(6), according to described minimum tunneling barrier and electric field intensity, minimum memory degree of depth d of electret type organic field effect tube memorizer is calculatedmin；Described minimum memory degree of depth dmin, it is defined as in certain thickness electret, under minimum program voltage, the depth capacity of electric charge tunnelling, wherein, this value
The computational methods of the electret type organic field effect tube memorizer minimum memory degree of depth the most according to claim 1, it is characterised in that: the electret layer in described organic field effect tube memorizer is selected from polymeric material and small molecule material.
The computational methods of the electret type organic field effect tube memorizer minimum memory degree of depth the most according to claim 1, it is characterised in that: program voltage V different described in step (2)ProgIncluding positive and negative gate voltage and corresponding aided programming means, the absolute value of program voltage is incremented by with arithmetic progression form；The test system used is to be furnished with the semiconductor analysis instrument of potential pulse module (SMU).
The computational methods of the electret type organic field effect tube memorizer minimum memory degree of depth the most according to claim 1, it is characterised in that: minimum tunneling barrier described in step (5)For calculating the absolute difference that system is semiconductor layer and the lowest unoccupied molecular orbital (LUMO) of electret that carrier is electronics；For calculating the absolute difference that system is semiconductor layer and the highest occupied molecular orbital (HOMO) of electret that carrier is hole.
The computational methods of the electret type organic field effect tube memorizer minimum memory degree of depth the most according to claim 2, it is characterized in that: described electret type organic field effect tube memorizer, including including substrate, gate electrode, gate insulation layer, electret layer, organic active layer, source-drain electrode from bottom to up；
The material of described substrate is selected from as highly doped silicon chip, sheet glass or plastics PET；
The material that described gate electrode uses is selected from highly doped silicon, aluminum, copper, silver, gold, titanium or tantalum；
The material that described gate insulation layer uses is selected from silicon dioxide, aluminium oxide, zirconium oxide, polystyrene PS or polyvinylpyrrolidone PVP, and the film thickness of described gate insulation layer is 300nm；
The film thickness of described electret layer is 30～100nm；
The material that described organic active layer uses is selected from Benzo[b, aphthacene, titan bronze, titanium fluoride bronze, rubrene or anthracene；Described organic active layer uses thermal vacuum evaporation film-forming method film forming, covers and forms conducting channel on electret layer surface, and its thickness is 40～50nm；
Described source-drain electrode materials is metal or organic conductor material, and its thickness is 60～100nm.
The computational methods of the electret type organic field effect tube memorizer minimum memory degree of depth the most according to claim 5, it is characterised in that: the material of described source-drain electrode is copper.
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| CN112490362A (en) * | 2020-11-11 | 2021-03-12 | 西安理工大学 | Preparation method of organic field effect transistor based on patterned substrate |
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