CN105818287A - Method for preparing high-purity submicron hydrated silica and silica microparticles in batch - Google Patents
Method for preparing high-purity submicron hydrated silica and silica microparticles in batch Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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Abstract
The invention relates to the technical field of semiconductor and solar-grade silicon materials, in particular to a method for preparing high-purity submicron hydrated silica and silicon microparticles in batch. The method comprises the following steps of adopting microfine diamond wires to grind and cut high-purity silicon rods or silicon ingots under the assistance of deionized water; after the concentrations of the silicon microparticles reach 10 weight percent, purifying and separating a mixture to form filter pressing water and hydrated silica microparticles; purifying the filter pressing water and then recycling; and performing vacuum freeze drying on the hydrated silica microparticles to form high-purity silicon microparticles. Compared with the prior art, the method has the advantages that the high-purity silicon rods are ground and cut under the action of the deionized water by using a microfine diamond wire cutting technique to prepare a high-purity silicon wafer; meanwhile, the cut mixture of the deionized water and the silicon microparticles is purified to prepare the high-purity hydrated silica microparticles or the high-purity silicon microparticles, and the high-purity hydrated silica microparticles or the high-purity silicon microparticles realize resource utilization; and an aqueous solution purified by the silicon microparticles is purified and then can be injected into the process of the microfine diamond wire cutting technique for recycling.
Description
Technical field
The present invention relates to quasiconductor and solar power silicon field of material technology, a kind of mass prepares high-purity submicron hydration silicon and the method for silicon particle.
Background technology
Along with modern information industry and the development of New Energy Industry, the semiconductor electronic technology based on HIGH-PURITY SILICON material has evolved into the pillar industry of advanced information society；Meanwhile, the solar photovoltaic technology based on HIGH-PURITY SILICON material is the most developing into the pillar industry of regenerative resource.The demand of HIGH-PURITY SILICON material and consumption are also in continual growth.
HIGH-PURITY SILICON material can be divided into monocrystal silicon and polysilicon by structure.The mainly monocrystalline silicon piece of semiconductor device such as integrated circuit, purity is more than 99.99999%；Solaode is useful according to the height of generating efficiency, monocrystalline silicon piece and polysilicon chip, and purity is more than 99.9999%.Because the generating efficiency of monocrystaline silicon solar cell is high, reliability is high, service life is long, along with technological progress will dominate solar photovoltaic industry.
The production of high-purity silicon chip is prepared through line cutting by high purity silicon rods or silicon ingot, and the silicon rod of the most about 60% or silicon ingot can be prepared as silicon chip, and remaining silicon of about 40% has then been stayed in cutting liquid for powder body, silicon powder after being dehydrated as waste disposal.During general cutting silicon chip, using metal wire containing silicon-carbide particles and Organic substance, under the aqueous solution effect of Polyethylene Glycol PEG, be ground cutting, line footpath is typically more than 250 microns.Containing silicon, carborundum, Organic substance, metal etc. as waste material or liquid waste processing in aqueous solution after cutting, it is not readily separated purification and recycles.
The diamond wire saw of new development, it is to use metal line surface to be coated with the silk thread of diamond particle silicon rod is ground under aqueous solution effect cutting, line footpath, typically below 250 microns, can have about 65 ~ 70% silicon rod materials to be cut into silicon chip, improve the utilization rate of silicon rod.Still have the silicon rod material of about 30 ~ 35% to be ground to be cut into silicon particle powder and be scattered in aqueous solution, as waste material or liquid waste processing simultaneously.
In particular with the high speed development of solar photovoltaic industry, create the waste water of substantial amounts of silicon powder-containing when crystal silicon chip produces, easily cause environmental pollution；Produced waste water or waste disposal are with high costs, also constrain the development of solar photovoltaic industry.
Therefore, need to design a kind of mass and prepare high-purity submicron hydration silicon and the method for silicon particle, recycle after waste material containing silicon particle is purified further, to reduce the waste of water resource, reduce risk of environmental pollution, also integrated cost that silicon chip produce can be greatly reduced simultaneously, promote quasiconductor and the Green Development of solar photovoltaic industry.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, provide a kind of mass and prepare high-purity submicron hydration silicon and the method for silicon particle, recycle after waste material containing silicon particle is purified further, to reduce the waste of water resource, reduce risk of environmental pollution, also integrated cost that silicon chip produce can be greatly reduced simultaneously, promote quasiconductor and the Green Development of solar photovoltaic industry.
In order to achieve the above object, the present invention is that a kind of mass prepares high-purity submicron hydration silicon and the method for silicon particle, it is characterized in that: prepare as follows: step 1, use fine diamond line, under deionized water assists, high purity silicon rods or silicon ingot are ground cutting, form high-purity silicon chip and dispersion silicon particle in deionized water；Step 2, after the silicon particle concentration in deionized water reaches 10wt%, discharges the mixture of deionized water and silicon particle, and carries out purification & isolation, forms filter pressing water and hydration silicon particle；Step 3, after being purified filter pressing water, is circulated use during injecting fine diamond wire cutting technology, hydration silicon particle is carried out vacuum lyophilization, forms HIGH-PURITY SILICON microgranule.
Described fine diamond line is the silk thread that metal line surface is coated with diamond particle, and line footpath is 30 ~ 120 microns, and diamond particle size is 5 ~ 20 microns, and described deionized water is the high purity water of resistivity 18M Ω.
Described purification & isolation specifically comprises the following steps that step 1, and < micro-filtration membrane of 2 μm, filters the mixture of deionized water and silicon particle, bulky grain or aggregate is filtered, and forms the suspension of the water containing silicon particle, and silicon particle size is within 1 μm to use aperture；Step 2, use platinum silk or platinum sheet as the electrochemical catalysis electrod-array of capacitance type structure, put in suspension, direct current or pulsed dc voltage 2-24V is added between negative electrode and anode, under electric field action, in suspension, the carbon of trace in cathode surface reduction deposition, goes the removal of impurity at the oxidized carbon dioxide that is decomposed into of anode surface, the metal ion of trace；Step 3, employing has aperture, and < filtering equipment of 0.5 μm microporous membrane, carries out filter pressing to the suspension after decontamination, forms filter pressing water and the hydration silicon particle of solid-state of liquid.
Described be purified filter pressing water includes capacitive deionization, electrodialysis, reverse osmosis, the attached process of ion-exchange absorption.
Described hydration silicon particle is carried out vacuum lyophilization specifically comprise the following steps that step 1, temperature controls below-10 DEG C, hydration silicon particle is put into vacuum chamber, it is evacuated to vacuum and reaches below 10Pa, water sublimate in hydration silicon particle is gaseous state, silicon particle is dehydrated, and forms HIGH-PURITY SILICON microgranule, and purity is more than 99.999%；Step 2, uses vacuum or filling with inert gas packaging to HIGH-PURITY SILICON microgranule.
Described HIGH-PURITY SILICON microgranule, melts under the mixed atmosphere less than or equal to 5vol% hydrogen at noble gas and concentration, and the hydrogen reduction in the silicon oxide of HIGH-PURITY SILICON microparticle surfaces is removed by hydrogen, forms high purity polycrystalline silicon block materials, purity more than 99.9999%.
Described HIGH-PURITY SILICON microgranule is under nitrogen hydrogen or ammonia atmosphere, after the nitridation heat treatment that temperature is 800 ~ 1400 DEG C, forms high purity silicon nitride silicon particle, for the preparation of silicon nitride ceramic material.
Described HIGH-PURITY SILICON microgranule is combined or under hydrocarbon atmosphere at hydrocarbon polymer, after the heat of carbonization processes, forms high-purity silicon carbide microgranule, for the preparation of thyrite.
Described hydration silicon particle, in a solution of hydrofluoric acid, after chemical attack or electrochemical etching, forms nanoporous silicon particle, after the oxidation of nano-structure porous silicon heat particles, forms nanoporous hydrated silica or the nanoporous silicon oxide particle material of high-specific surface area.
Described nanoporous silicon particle, is combined with material with carbon element or metal material, forms high power capacity and nanoporous silicon-carbon or silicon metallic composite, for energy storage device.
The present invention is compared with the existing technology; use fine diamond wire cutting technology; under deionized water effect, high purity silicon rods is ground cutting and prepares high-purity silicon chip; simultaneously; the mixture of the deionized water after cutting and silicon particle is purified; to prepare high-purity hydrated silicon particle or HIGH-PURITY SILICON microgranule, and recycling in addition.Aqueous solution after silicon particle purifies can inject in fine diamond wire cutting technology engineering after purifying again and be circulated use.
Accompanying drawing explanation
Fig. 1 is the process chart of the present invention.
Fig. 2 is the structural representation that the present invention is hydrated silicon particle.
Detailed description of the invention
In conjunction with accompanying drawing, the present invention is described further.
See Fig. 1, a kind of mass of the present invention prepares high-purity submicron hydration silicon and the method for silicon particle, prepare as follows: step 1, use fine diamond line, under deionized water assists, the high purity silicon rods that purity is more than 99.9999% or silicon ingot are ground cutting, are formed for semiconductor device or high-purity silicon chip of manufacture of solar cells and disperse silicon particle in deionized water.Fine diamond line is the silk thread that metal line surface is coated with diamond particle, and line footpath is 30 ~ 120 microns, and diamond particle size is 5 ~ 20 microns, and under the abrasive action of diamond particle, produced silicon particle size is below 1 micron.The line footpath of diamond is the thinnest, and the silicon chip quantity of cutting is the most, and as used high-purity silicon chip that diamond wire saw thickness is 180 microns of 80 microns, the high purity silicon rods material of about 70% is cut into high-purity silicon chip, and remaining high purity silicon rods of about 30% is ground as silicon particle.Deionized water is the high purity water of resistivity 18M Ω, and deionized water, when fine diamond line cutting and grinding high purity silicon rods, plays cooling and lubrication, the silicon particle ground played flushing action simultaneously.
Step 2, after the silicon particle concentration in deionized water reaches 10wt%, discharges the mixture of deionized water and silicon particle, and carries out purification & isolation, forms filter pressing water and hydration silicon particle.
Purification & isolation specifically comprises the following steps that step 1; < micro-filtration membrane of 2 μm, filters the mixture of deionized water and silicon particle, bulky grain or aggregate is filtered to use aperture; form the suspension of the water containing silicon particle; silicon particle size is within 1 μm, in addition to water and silicon particle, possibly together with concentration < carbon of 0.1mg/L and concentration < two kinds of impurity of the metal ion of 1ppm in suspension; the possible element of metal ion is Fe; Ni, Cr, Ti.Step 2, use platinum silk or platinum sheet as the electrochemical catalysis electrod-array of capacitance type structure, put in suspension, direct current or pulsed dc voltage 2-24V is added between negative electrode and anode, under electric field action, in suspension, the carbon of trace in cathode surface reduction deposition, goes the removal of impurity at the oxidized carbon dioxide that is decomposed into of anode surface, the metal ion of trace.Step 3, employing has aperture, and < filtering equipment of 0.5 μm microporous membrane, carries out filter pressing to the suspension after decontamination, forms filter pressing water and the hydration silicon particle of solid-state of liquid.
Hydration silicon particle prepared by the present invention, mainly it is made up of HIGH-PURITY SILICON microgranule and water, HIGH-PURITY SILICON particle size is in 100 ~ 1000nm scope, and purity is more than 99.9999%, and silicon particle surface can be formed with a thin layer thickness < silicon oxide of 1nm in cutting and grinding technical process.Silicon oxide layer because being formed is polar molecule, is easily combined with hydrone, defines hydration silicon particle Si-nH2O, water content is about 30%.The structural representation of hydration silicon particle as described in Figure 2, granule size in sub-micrometer scale, the hydrone in surface adsorption.Hydration silicon particle presents moistening powder form, relatively stable in air.
Step 3, after being purified filter pressing water, injects fine diamond line and is circulated use, hydration silicon particle is carried out vacuum lyophilization, forms HIGH-PURITY SILICON microgranule.
Filter pressing water is purified and includes capacitive deionization, electrodialysis, reverse osmosis, the attached process of ion-exchange absorption.
Hydration silicon particle is carried out vacuum lyophilization and specifically comprises the following steps that step 1, temperature controls below-10 DEG C, hydration silicon particle is put into vacuum chamber, being evacuated to vacuum and reach below 10Pa, the water sublimate in hydration silicon particle is gaseous state, and silicon particle is dehydrated, form HIGH-PURITY SILICON microgranule, purity is more than 99.999%, and step 2, to HIGH-PURITY SILICON microgranule employing vacuum or filling with inert gas packaging.
Hydration silicon particle prepared by the present invention, is dehydrated according to mode of heating, and because silicon particle size is less, surface activity is higher, and when temperature is more than 60 DEG C, surface is the most oxidized so that the purity of silicon particle declines.The vacuum freeze-drying technique that the present invention uses, can avoid silicon particle oxidation in dehydration.Owing to the granularity of silicon particle is submicron order, specific surface is relatively big, and silicon particle exposes in atmosphere, the most oxidized, the dangerous situations such as spontaneous combustion even can occur, in order to avoid silicon particle exposes in atmosphere, the present invention uses vacuum or fills the noble gas such as argon, packs.
HIGH-PURITY SILICON microgranule prepared by the present invention is under the mixed atmosphere less than or equal to 5vol% hydrogen such as argon and concentration, melt, hydrogen reduction in the silicon oxide of HIGH-PURITY SILICON microparticle surfaces is removed by hydrogen, form high purity polycrystalline silicon block materials, purity more than 99.9999%, polysilicon block materials prepares formation silicon single crystal rod material further, can be used for the production of solaode, has accomplished recycling of silicon materials.
HIGH-PURITY SILICON microgranule prepared by the present invention is under nitrogen hydrogen or ammonia atmosphere, after the nitridation heat treatment that temperature is 800 ~ 1400 DEG C, forms high purity silicon nitride silicon particle, for the preparation of silicon nitride ceramic material.
HIGH-PURITY SILICON microgranule prepared by the present invention is combined or under hydrocarbon atmosphere at hydrocarbon polymer, after the heat of carbonization processes, forms high-purity silicon carbide microgranule, for the preparation of thyrite.
Hydration silicon particle prepared by the present invention, in a solution of hydrofluoric acid, after chemical attack or electrochemical etching, forms nanoporous silicon particle, nanoporous silicon particle, can apply as the energy storage of high power capacity or energetic material.After the oxidation of nano-structure porous silicon heat particles, form nanoporous hydrated silica or the nanoporous silicon oxide particle material of high-specific surface area, can use as in efficient absorption or filtering material.
Nanoporous silicon particle, with include Graphene material with carbon element or include stannum, titanium material metal material be combined, form high power capacity and nanoporous silicon-carbon or silicon metallic composite, can be used for the preparation that high-capacity secondary battery includes the electrode material of lithium ion and the negative electrode material of sodium-ion battery or energy storage super capacitor.
The present invention is because have employed silicon particle material produced by the high-purity silicon chip of industrial-scale production, the improvement of fine diamond line cutting and grinding production technology and waste liquid purification technique through the present invention, recycling of waste water can be accomplished, make silicon particle resourcebility utilize simultaneously.Semi-conductor silicon chip or the production cost of photovoltaic silicon chip can be greatly reduced by the present invention, low-coat scale metaplasia can produce hydration silicon and the silicon particle material of high-purity submicron order simultaneously, and expand the functionalized application of silicon particle.Applied by the technology of the present invention, semi-conductor industry and the development of solar energy power generating industry can be effectively facilitated, particularly accelerating high efficiency mono-crystalline silicon solar photovoltaic technology as the acceleration application of regenerative resource and to popularize, information and energy industry structural adjustment for human society play positive impetus.
Claims (10)
1. a mass prepares high-purity submicron hydration silicon and the method for silicon particle, it is characterized in that: prepare as follows: step 1, use fine diamond line, under deionized water assists, high purity silicon rods or silicon ingot are ground cutting, form high-purity silicon chip and dispersion silicon particle in deionized water；Step 2, after the silicon particle concentration in deionized water reaches 10wt%, discharges the mixture of deionized water and silicon particle, and carries out purification & isolation, forms filter pressing water and hydration silicon particle；Step 3, after being purified filter pressing water, injects fine diamond wire cutting technology process and is circulated use, hydration silicon particle is carried out vacuum lyophilization, forms HIGH-PURITY SILICON microgranule.
A kind of mass the most according to claim 1 prepares high-purity submicron hydration silicon and the method for silicon particle, it is characterized in that: described fine diamond line is the silk thread that metal line surface is coated with diamond particle, line footpath is 30-120 micron, diamond particle size is 5-20 micron, and described deionized water is the high purity water of resistivity 18M Ω.
nullA kind of mass the most according to claim 1 prepares high-purity submicron hydration silicon and the method for silicon particle，It is characterized in that: described purification & isolation specifically comprises the following steps that step 1，Use the aperture < micro-filtration membrane of 2 μm，The mixture of deionized water and silicon particle is filtered，Bulky grain or aggregate are filtered，Form the suspension of the water containing silicon particle，Silicon particle size is within 1 μm，Step 2，Use platinum silk or platinum sheet as the electrochemical catalysis electrod-array of capacitance type structure，Put in suspension，Direct current or pulsed dc voltage 2-24V is added between negative electrode and anode，Under electric field action，In suspension, the carbon of trace is decomposed into carbon dioxide anode surface is oxidized，The metal ion of trace is in cathode surface reduction deposition，Go the removal of impurity，Step 3，Use and there is the aperture < filtering equipment of 0.5 μm microporous membrane，Suspension after decontamination is carried out filter pressing，Form filter pressing water and the hydration silicon particle of solid-state of liquid.
A kind of mass the most according to claim 1 prepares high-purity submicron hydration silicon and the method for silicon particle, it is characterised in that: described be purified filter pressing water includes capacitive deionization, electrodialysis, reverse osmosis, the attached process of ion-exchange absorption.
A kind of mass the most according to claim 1 prepares high-purity submicron hydration silicon and the method for silicon particle, it is characterized in that: described hydration silicon particle is carried out vacuum lyophilization specifically comprise the following steps that step 1, temperature controls below-10 DEG C, hydration silicon particle is put into vacuum chamber, being evacuated to vacuum and reach below 10Pa, the water sublimate in hydration silicon particle is gaseous state, and silicon particle is dehydrated, forming HIGH-PURITY SILICON microgranule, purity is more than 99.999%；Step 2, uses vacuum or filling with inert gas packaging to HIGH-PURITY SILICON microgranule.
A kind of mass prepares high-purity submicron hydration silicon and the method for silicon particle, it is characterized in that: described HIGH-PURITY SILICON microgranule is under the mixed atmosphere that noble gas and concentration are less than or equal to 5vol% hydrogen, melt, hydrogen reduction in the silicon oxide of HIGH-PURITY SILICON microparticle surfaces is removed by hydrogen, form high purity polycrystalline silicon block materials, purity more than 99.9999%.
A kind of mass prepares high-purity submicron hydration silicon and the method for silicon particle, it is characterized in that: described HIGH-PURITY SILICON microgranule is under nitrogen hydrogen or ammonia atmosphere, after the nitridation heat treatment that temperature is 800-1400 DEG C, form high purity silicon nitride silicon particle, for the preparation of silicon nitride ceramic material.
A kind of mass prepares high-purity submicron hydration silicon and the method for silicon particle, it is characterized in that: described HIGH-PURITY SILICON microgranule is combined or under hydrocarbon atmosphere at hydrocarbon polymer, after the heat of carbonization processes, form high-purity silicon carbide microgranule, for the preparation of thyrite.
9. prepare high-purity submicron hydration silicon and the method for silicon particle according to a kind of mass described in claim 1 or 3, it is characterised in that: described hydration silicon particle, in a solution of hydrofluoric acid, after chemical attack or electrochemical etching, form nanoporous silicon particle；After the oxidation of nano-structure porous silicon heat particles, form nanoporous hydrated silica or the nanoporous silicon oxide particle material of high-specific surface area.
A kind of mass the most according to claim 9 prepares high-purity submicron hydration silicon and the method for silicon particle, it is characterized in that: described nanoporous silicon particle, it is combined with material with carbon element or metal material, form nanoporous silicon-carbon or the silicon metallic composite of high power capacity, for energy storage device.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3056574A1 (en) * | 2016-09-29 | 2018-03-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | PROCESS FOR PREPARING FUNCTIONALIZED SILICON PARTICLES |
| CN108751204A (en) * | 2018-05-14 | 2018-11-06 | 江苏联瑞新材料股份有限公司 | A kind of preparation method of submicron silicon dioxide dispersion liquid |
| CN111032569A (en) * | 2017-07-25 | 2020-04-17 | 道达尔太阳能国际公司 | Method for recovering submicron silicon particles from silicon wafer production process |
| CN112424401A (en) * | 2018-06-18 | 2021-02-26 | 道达尔欧洲公司 | Method for recovering submicron Si particles from Si wafer production process and silicon wafer production equipment |
Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1994878A (en) * | 2006-12-25 | 2007-07-11 | 杨贻方 | Method for purifying silicon |
| CN101032806A (en) * | 2006-03-06 | 2007-09-12 | 张捷平 | Method of recycling cutting suspension |
| CN101760204A (en) * | 2009-12-08 | 2010-06-30 | 武汉工业学院 | Method for electric field to absorb and purify liquid crystal |
| CN101760203A (en) * | 2009-12-08 | 2010-06-30 | 武汉工业学院 | Method for purifying liquid crystal material |
| CN101792142A (en) * | 2009-12-31 | 2010-08-04 | 唐康宁 | Method for recovering polysilicon ingots, carborundum powder and polyethylene glycol from cutting waste mortar |
| CN101792691A (en) * | 2010-02-22 | 2010-08-04 | 陈锡元 | Recovery and recycle process of liquid contained in silicon slice cutting waste mortar |
| CN101804983A (en) * | 2010-04-23 | 2010-08-18 | 连云港佳宇电子材料科技有限公司 | Recovery, purification and classification method of high-purity silicon carbide micro-powder |
| CN101823712A (en) * | 2010-04-02 | 2010-09-08 | 河南新大新材料股份有限公司 | Recovery processing method of silicon slice cut waste mortar |
| CN102167322A (en) * | 2011-01-15 | 2011-08-31 | 塔里木大学 | Method for recovering silicon carbide in waste cutting mortar by using ammonium bifluoride |
| CN102173419A (en) * | 2011-02-28 | 2011-09-07 | 江苏科理德再生科技有限公司 | Method for recycling silicon powder from silicon slice cut waste mortar |
| CN102320701A (en) * | 2011-06-15 | 2012-01-18 | 波鹰(厦门)科技有限公司 | Device and method for recycling silicon powder in silicon processing waste water |
| CN102329688A (en) * | 2011-07-22 | 2012-01-25 | 周彬 | Method for recycling cutting fluid in single crystal silicon cutting fluid waste mortar |
| CN202164124U (en) * | 2011-06-15 | 2012-03-14 | 波鹰(厦门)科技有限公司 | Silica powder recycling device for silicon processing waste water |
| CN102482102A (en) * | 2009-08-13 | 2012-05-30 | 信越化学工业株式会社 | Method For Producing Silicon Carbide |
| CN102491352A (en) * | 2011-12-14 | 2012-06-13 | 江苏佳宇资源利用股份有限公司 | Method for preparing white carbon black by silicon powder component acquired by cyclone separation of waste motar |
| CN102626954A (en) * | 2012-02-14 | 2012-08-08 | 上海五同机械制造有限公司 | Silicon wafer cutting method and cut scrap recycling method |
| CN102815700A (en) * | 2012-09-18 | 2012-12-12 | 复旦大学 | Method for preparing nanometer silicon carbide by recycling silicon cut wastes |
| CN102952621A (en) * | 2011-08-19 | 2013-03-06 | 台湾水再生科技股份有限公司 | Silicon wafer cutting and grinding waste recovery processing method and equipment thereof |
| CN102951641A (en) * | 2012-11-01 | 2013-03-06 | 临沭山田研磨材有限公司 | Water-saving and environmental protection-type preparation method of silicon carbide micro-powder for silicon wafer wire cutting |
| CN103435050A (en) * | 2013-09-18 | 2013-12-11 | 天津大学 | Method for preparing white carbon black from monocrystalline silicon environment-friendly waste mortar |
| CN104120026A (en) * | 2014-08-07 | 2014-10-29 | 佳明新材料科技有限公司 | Method for comprehensively recycling SiC cutting fluid waste mortar |
| CN104276574A (en) * | 2013-07-05 | 2015-01-14 | 河南省超贝工程设备有限公司 | Method for extraction of high-purity silicon from crystal silicon cutting waste liquid |
| CN105252658A (en) * | 2015-10-29 | 2016-01-20 | 浙江农林大学 | Solar silicon wafer cutting method |
-
2016
- 2016-05-31 CN CN201610372956.3A patent/CN105818287B/en active Active
Patent Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101032806A (en) * | 2006-03-06 | 2007-09-12 | 张捷平 | Method of recycling cutting suspension |
| CN1994878A (en) * | 2006-12-25 | 2007-07-11 | 杨贻方 | Method for purifying silicon |
| CN102482102A (en) * | 2009-08-13 | 2012-05-30 | 信越化学工业株式会社 | Method For Producing Silicon Carbide |
| CN101760204A (en) * | 2009-12-08 | 2010-06-30 | 武汉工业学院 | Method for electric field to absorb and purify liquid crystal |
| CN101760203A (en) * | 2009-12-08 | 2010-06-30 | 武汉工业学院 | Method for purifying liquid crystal material |
| CN101792142A (en) * | 2009-12-31 | 2010-08-04 | 唐康宁 | Method for recovering polysilicon ingots, carborundum powder and polyethylene glycol from cutting waste mortar |
| CN101792691A (en) * | 2010-02-22 | 2010-08-04 | 陈锡元 | Recovery and recycle process of liquid contained in silicon slice cutting waste mortar |
| CN101823712A (en) * | 2010-04-02 | 2010-09-08 | 河南新大新材料股份有限公司 | Recovery processing method of silicon slice cut waste mortar |
| CN101804983A (en) * | 2010-04-23 | 2010-08-18 | 连云港佳宇电子材料科技有限公司 | Recovery, purification and classification method of high-purity silicon carbide micro-powder |
| CN102167322A (en) * | 2011-01-15 | 2011-08-31 | 塔里木大学 | Method for recovering silicon carbide in waste cutting mortar by using ammonium bifluoride |
| CN102173419A (en) * | 2011-02-28 | 2011-09-07 | 江苏科理德再生科技有限公司 | Method for recycling silicon powder from silicon slice cut waste mortar |
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