CN102626954A - Silicon wafer cutting method and cut scrap recycling method - Google Patents
Silicon wafer cutting method and cut scrap recycling method Download PDFInfo
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- CN102626954A CN102626954A CN2012100321592A CN201210032159A CN102626954A CN 102626954 A CN102626954 A CN 102626954A CN 2012100321592 A CN2012100321592 A CN 2012100321592A CN 201210032159 A CN201210032159 A CN 201210032159A CN 102626954 A CN102626954 A CN 102626954A
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Abstract
The invention relates to the technical field of cutting machinery, in particular to a silicon wafer cutting method and a cut scrap recycling method. According to the silicon wafer cutting method, a steel wire of linear cutting equipment is used for cutting a silicon ingot into silicon wafers in an inert gas atmosphere. According to the cut scrap recycling method, after the silicon ingot is cut by the silicon wafer cutting method, scraps are produced, and recycle of the scraps comprises the following steps of 1) separating polyethylene glycol and a solid mixture from the scraps through solid-liquid separation; 2) cleaning the solid mixture; 3) primarily separating the solid mixture through extraction, and separating out silicon and silicon carbide; and 4) floating the separated silicon, and floating out silicon and silicon carbide. Due to adoption of the technical scheme, the scraps produced after cutting the silicon wafers can be recycled, the silicon wafer cutting cost is reduced, and the pollution caused by cut scraps is avoided; therefore, the silicon wafer cutting method and the cut scrap recycling method are environment-friendly and energy-saving.
Description
Technical field
The present invention relates to the cutting mechanics technical field, relate in particular to the recovery of a kind of silicon chip cutting method and cutting waste material.
Background technology
In recent years, along with global oil, coal equal energy source growing tension, solar energy becomes important new forms of energy gradually, and the solar energy industry in the whole world has got into high-speed development period.During the preparation solar cell, need HIGH-PURITY SILICON be formed polycrystal silicon ingot, cut into silicon chip then.In cutting process, have the part crystalline silicon and cut mill for high-purity silicon powder enters into the cutting slurry, caused the waste of resource.
Summary of the invention
The object of the present invention is to provide a kind of silicon chip cutting method, to solve the problems of the technologies described above.
Another object of the present invention is to provide a kind of silicon chip cutting waste material recovery method, to solve the problems of the technologies described above.
The technical problem that the present invention solved can adopt following technical scheme to realize:
The silicon chip cutting method is utilized linear cutting equipment, adopts line cutting technology that silicon ingot is cut; Cut into silicon chip, it is characterized in that, said linear cutting equipment comprises steel wire; Said steel wire evenly applied one deck slurry abrasive material on said steel wire before silicon ingot is cut;
Said linear cutting equipment and silicon ingot are placed in the inert gas environment, and said steel wire cuts silicon ingot under inert gas environment.
The present invention is placed on the cutting process of silicon chip in the inert gas environment and carries out, and like this in cutting process, can effectively avoid the silica flour oxidation that cuts down, so that when reclaiming the cutting waste material, can extract the silicon materials of higher degree.
Said slurry abrasive material comprises the compound of carborundum and cutting oil plant; Said cutting oil plant comprises polyethylene glycol.The present invention can well be bonded in carbofrax material polyethylene glycol on the steel wire as binding agent, and as abrasive material, steel wire cuts silicon ingot in the process of walking about.
The present invention is the wire cutting technology of silicon chip, at steel wire silicon ingot is carried out in the cutting process, and the cutting rubbing of steel wire and silicon ingot can produce heat; Therefore the present invention adopts following design; To reduce the heat that cutting produces: before the slurry abrasive material applies steel wire, will starch abrasive material earlier and adopt cooling system to cool off, cooled slurry abrasive material evenly applies in Steel Wire Surface; At steel wire silicon ingot is carried out in the cutting process, cooled slurry abrasive material is taken away the heat that cutting produces.
Said inert gas environment preferably adopts nitrogen environment, and said linear cutting equipment and silicon ingot are placed in the work chamber that is filled with nitrogen, and said steel wire cuts silicon ingot under nitrogen environment.
When said steel wire cut silicon ingot under nitrogen environment, circulation charged into liquid nitrogen in the work chamber, and the temperature of liquid nitrogen is not higher than 20 degree, the heat that produces during through liquid nitrogen cooling steel wire cutting silicon ingot.
Silicon chip cutting waste material recovery method, adopt above-mentioned silicon chip cutting method cutting silicon ingot after, can produce waste material, the recovery of waste material comprises the steps:
1) waste material that the silicon chip cutting is produced adopts the mode of Separation of Solid and Liquid from waste material, to isolate polyethylene glycol and solid mixture;
2) adopt solvent that solid mixture is cleaned;
3) adopt the mode of extract and separate that solid mixture is carried out preliminary separation, isolate silicon and carborundum;
4) with carrying out flotation in the liquid of isolated silicon adding density between silicon and carborundum, floatingly select silicon and carborundum;
Extract and separate carborundum that goes out and the carborundum that floatingly selects are mixed.
The present invention adopts aforesaid way that the polyethylene glycol in the waste material, carborundum and silicon are separated; Because having carried out two degree with silicon, separates in carborundum; The carborundum after it separates and the silicon rate of recovery are high, purity is high, efficiently solve the shortage problem of silicon materials, and have solved the pollution of cutting waste material; Improved the recycling of resource, environmental protection and energy saving.
In the step 1), preferably adopt vacuum centrifuge or vacuum filter to realize Separation of Solid and Liquid, in vacuum centrifuge or vacuum filter, charge into inert gas.So that when carrying out Separation of Solid and Liquid, silicon is not easy oxidation, can obtain highly purified silicon at last.
Step 2) in, when solid mixture is cleaned, preferably adopt the mode of ultrasonic waves for cleaning to clean solid mixture.
After the step 4), the silicon that floatingly selects also carries out magnetic separation, and carries out pickling, drying, obtains silica flour.Carry out in the cutting process at silicon ingot, the metal mixed that has part after the employing magnetic separation, can be got rid of metal in silicon.In addition,, therefore use acidic materials to carry out pickling the silicon that reclaims, finally can obtain highly purified silica flour because the easy oxidation of silicon in removal process, inevitably can form silica at silicon surface oxidation.
After the step 4), mixed carborundum also carries out magnetic separation, and carries out alkali cleaning, pickling, flushing with clean water, oven dry, obtains silicon-carbide particle.
The present invention can also obtain satisfactory carborundum with the dry classification screening with silicon-carbide particle.
Beneficial effect: owing to adopt technique scheme, the present invention can recycle the waste material after the silicon chip cutting, has reduced the cost of silicon chip cutting, and has solved the pollution of cutting waste material, environmental protection and energy saving.
Description of drawings
Fig. 1 is the flow chart of silicon chip cutting waste material recovery method of the present invention.
The specific embodiment
For technological means, creation characteristic that the present invention is realized, reach purpose and effect and be easy to understand and understand, further set forth the present invention below in conjunction with concrete diagram.
The silicon chip cutting method is utilized linear cutting equipment, adopts line cutting technology that silicon ingot is cut, and cuts into silicon chip, and linear cutting equipment comprises steel wire, and steel wire evenly applied one deck slurry abrasive material on steel wire before silicon ingot is cut.Linear cutting equipment and silicon ingot are placed in the inert gas environment, and steel wire cuts silicon ingot under inert gas environment.The present invention is placed on the cutting process of silicon chip in the inert gas environment and carries out, and like this in cutting process, can effectively avoid the silica flour oxidation that cuts down, so that when reclaiming the cutting waste material, can extract the silicon materials of higher degree.
Inert gas environment preferably adopts nitrogen environment, and linear cutting equipment and silicon ingot are placed in the work chamber that is filled with nitrogen, and steel wire cuts silicon ingot under nitrogen environment.When steel wire cut silicon ingot under nitrogen environment, circulation charged into liquid nitrogen in the work chamber, and the temperature of liquid nitrogen is not higher than 20 degree, the heat that produces during through liquid nitrogen cooling steel wire cutting silicon ingot.
The slurry abrasive material comprises the compound of carborundum and cutting oil plant.The cutting oil plant comprises polyethylene glycol.The present invention can well be bonded in carbofrax material polyethylene glycol on the steel wire as binding agent, and as abrasive material, steel wire cuts silicon ingot in the process of walking about.
The present invention is the wire cutting technology of silicon chip, at steel wire silicon ingot is carried out in the cutting process, and the cutting rubbing of steel wire and silicon ingot can produce heat; Therefore the present invention adopts following design; To reduce the heat that cutting produces: before the slurry abrasive material applies steel wire, will starch abrasive material earlier and adopt cooling system to cool off, cooled slurry abrasive material evenly applies in Steel Wire Surface; At steel wire silicon ingot is carried out in the cutting process, cooled slurry abrasive material is taken away the heat that cutting produces.
With reference to Fig. 1, silicon chip cutting waste material recovery method, adopt above-mentioned silicon chip cutting method cutting silicon ingot after, can produce waste material, the recovery of waste material comprises the steps:
The first step, the waste material that the silicon chip cutting is produced adopts the mode of Separation of Solid and Liquid from waste material, to isolate polyethylene glycol and solid mixture.Preferred vacuum centrifuge or the vacuum filter of adopting realized Separation of Solid and Liquid.Charge into inert gas in vacuum centrifuge or the vacuum filter, under inert gas environment, realize Separation of Solid and Liquid.So that when carrying out Separation of Solid and Liquid, silicon is not easy oxidation, can obtain highly purified silicon at last.When adopting vacuum filter, preferably adopt bionical filter membrane that waste solution is filtered, obtain polyglycol solution and solid mixture.
In second step, adopt solvent that solid mixture is carried out ultrasonic waves for cleaning.
The 3rd step, adopt the mode of extract and separate that solid mixture is carried out preliminary separation, isolate silicon and carborundum.In when extraction, institute of section adopts two kinds of different solvents, is respectively first solvent, second solvent, the density of second solvent is greater than the density of first solvent, also greater than the density of silicon, first polarity of solvent is greater than second polarity of solvent, also greater than the polarity of carborundum.First solvent and second solvent are put into separation container, separation container top in first solvent, the bottom of separation container in second solvent.First solvent is as the upper strata solvent; Second solvent as lower floor's solvent, is put into separation container with solid mixture, after standing sedimentation 20-25 minute; In the most of sedimentation of silicon-carbide particle and the lower floor's solvent; Silicon grain then is in the solvent of upper strata, reclaims carborundum and silicon grain respectively, realizes the extract and separate purpose.
In the 4th step,, floatingly select silicon and carborundum with carrying out flotation in the liquid of isolated silicon adding density between silicon and carborundum.Floating when washing, adopting in the density solvent between the silicon and carborundum to wash solvent as floating, resulting flotation thing is a silicon grain, and sediment is a silicon-carbide particle.
The silicon that floatingly selects carries out magnetic separation, pickling, drying, obtains silica flour.Carry out in the cutting process at silicon ingot, the metal mixed that has part after the employing magnetic separation, can be got rid of metal in silicon.In addition,, therefore use acidic materials to carry out pickling the silicon that reclaims, finally can obtain highly purified silica flour because the easy oxidation of silicon in removal process, inevitably can form silica at silicon surface oxidation.
Extract and separate carborundum that goes out and the carborundum that floatingly selects are mixed.Mixed carborundum also carries out magnetic separation, and carries out alkali cleaning, pickling, flushing with clean water, oven dry, obtains silicon-carbide particle.The present invention can also obtain satisfactory carborundum with the dry classification screening with silicon-carbide particle.
The present invention adopts aforesaid way that the polyethylene glycol in the waste material, carborundum and silicon are separated; Because having carried out two degree with silicon, separates in carborundum; The carborundum after it separates and the silicon rate of recovery are high, purity is high, efficiently solve the shortage problem of silicon materials, and have solved the pollution of cutting waste material; Improved the recycling of resource, environmental protection and energy saving.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; The present invention is not restricted to the described embodiments; That describes in the foregoing description and the specification just explains principle of the present invention; Under the prerequisite that does not break away from spirit and scope of the invention, the present invention also has various changes and modifications, and these variations and improvement all fall in the scope of the invention that requires protection.The present invention requires protection domain to be defined by appending claims and equivalent thereof.
Claims (10)
1. the silicon chip cutting method is utilized linear cutting equipment, adopts line cutting technology that silicon ingot is cut; Cut into silicon chip, it is characterized in that, said linear cutting equipment comprises steel wire; Said steel wire evenly applied one deck slurry abrasive material on said steel wire before silicon ingot is cut;
Said linear cutting equipment and silicon ingot are placed in the inert gas environment, and said steel wire cuts silicon ingot under inert gas environment.
2. silicon chip cutting method according to claim 1 is characterized in that, said slurry abrasive material comprises the compound of carborundum and cutting oil plant; Said cutting oil plant comprises polyethylene glycol.
3. silicon chip cutting method according to claim 1 and 2; It is characterized in that; Before the slurry abrasive material applies steel wire, will starch abrasive material earlier and adopt cooling system to cool off, cooled slurry abrasive material evenly applies in Steel Wire Surface; At steel wire silicon ingot is carried out in the cutting process, cooled slurry abrasive material is taken away the heat that cutting produces.
4. silicon chip cutting method according to claim 1 and 2 is characterized in that, said inert gas environment adopts nitrogen environment, and said linear cutting equipment and silicon ingot are placed in the work chamber that is filled with nitrogen, and said steel wire cuts silicon ingot under nitrogen environment.
5. silicon chip cutting method according to claim 4; It is characterized in that when said steel wire cut silicon ingot, circulation charged into liquid nitrogen in the work chamber under nitrogen environment; The temperature of liquid nitrogen is not higher than 20 degree, the heat that produces during through liquid nitrogen cooling steel wire cutting silicon ingot.
6. silicon chip cutting waste material recovery method adopts the described silicon chip cutting method of claim 1, behind the cutting silicon ingot, produces waste material, it is characterized in that the recovery of said waste material comprises the steps:
1) waste material that the silicon chip cutting is produced adopts the mode of Separation of Solid and Liquid from waste material, to isolate polyethylene glycol and solid mixture;
2) adopt solvent that solid mixture is cleaned;
3) adopt the mode of extract and separate that solid mixture is carried out preliminary separation, isolate silicon and carborundum;
4) with carrying out flotation in the liquid of isolated silicon adding density between silicon and carborundum, floatingly select silicon and carborundum;
Extract and separate carborundum that goes out and the carborundum that floatingly selects are mixed.
7. silicon chip cutting waste material recovery method according to claim 6 is characterized in that, in the step 1), adopts vacuum centrifuge or vacuum filter, in vacuum centrifuge or vacuum filter, charges into inert gas, under inert gas environment, realizes Separation of Solid and Liquid.
8. silicon chip cutting waste material recovery method according to claim 6 is characterized in that step 2) in, when solid mixture is cleaned, adopt the mode of ultrasonic waves for cleaning to clean solid mixture.
9. silicon chip cutting waste material recovery method according to claim 6 is characterized in that after the step 4), the silicon that floatingly selects also carries out magnetic separation, and carries out pickling, drying, obtains silica flour.
10. silicon chip cutting waste material recovery method according to claim 6 is characterized in that after the step 4), mixed carborundum also carries out magnetic separation, and carries out alkali cleaning, pickling, flushing with clean water, oven dry, obtains silicon-carbide particle.
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Cited By (8)
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CN103920945A (en) * | 2014-04-01 | 2014-07-16 | 北京冶科纳米科技有限公司 | Electric discharge wire cutting method for niobium pentoxide target material blank |
WO2014110337A1 (en) * | 2013-01-11 | 2014-07-17 | Alternative Charge Materials, Llc | Method of agglomerating silicon/silicon carbide from wiresawing waste and product therefrom |
CN105174266A (en) * | 2015-08-18 | 2015-12-23 | 北京科技大学 | Method for removing impurity iron in wire-electrode cutting waste materials of polycrystalline silicon and monocrystalline silicon |
CN105818287A (en) * | 2016-05-31 | 2016-08-03 | 上海纳晶科技有限公司 | Method for preparing high-purity submicron hydrated silica and silica microparticles in batch |
CN106865552A (en) * | 2016-10-26 | 2017-06-20 | 东北大学 | A kind of method that high-purity silicon powder is reclaimed in cutting waste material slurry from crystalline silicon |
CN107758672A (en) * | 2017-12-04 | 2018-03-06 | 中国恩菲工程技术有限公司 | The recovery method of silica flour in crystalline silicon cutting waste material |
CN108748746A (en) * | 2018-06-14 | 2018-11-06 | 邢台晶龙电子材料有限公司 | A kind of polycrystalline foam recoverying and utilizing method |
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WO2014110337A1 (en) * | 2013-01-11 | 2014-07-17 | Alternative Charge Materials, Llc | Method of agglomerating silicon/silicon carbide from wiresawing waste and product therefrom |
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CN105174266B (en) * | 2015-08-18 | 2018-06-29 | 北京科技大学 | The minimizing technology of impurity iron in a kind of polysilicon and monocrystalline silicon wire cutting waste material |
CN105174266A (en) * | 2015-08-18 | 2015-12-23 | 北京科技大学 | Method for removing impurity iron in wire-electrode cutting waste materials of polycrystalline silicon and monocrystalline silicon |
CN105818287A (en) * | 2016-05-31 | 2016-08-03 | 上海纳晶科技有限公司 | Method for preparing high-purity submicron hydrated silica and silica microparticles in batch |
CN106865552B (en) * | 2016-10-26 | 2019-04-26 | 东北大学 | A method of high-purity silicon powder is recycled from the cutting waste material of crystalline silicon slurry |
CN106865552A (en) * | 2016-10-26 | 2017-06-20 | 东北大学 | A kind of method that high-purity silicon powder is reclaimed in cutting waste material slurry from crystalline silicon |
CN107758672A (en) * | 2017-12-04 | 2018-03-06 | 中国恩菲工程技术有限公司 | The recovery method of silica flour in crystalline silicon cutting waste material |
CN108748746A (en) * | 2018-06-14 | 2018-11-06 | 邢台晶龙电子材料有限公司 | A kind of polycrystalline foam recoverying and utilizing method |
CN108748746B (en) * | 2018-06-14 | 2020-02-18 | 邢台晶龙电子材料有限公司 | Polycrystalline foam recycling method |
CN115847629A (en) * | 2022-11-30 | 2023-03-28 | 江苏富乐徳石英科技有限公司 | Efficient, energy-saving and environment-friendly quartz ring preparation process |
CN115847629B (en) * | 2022-11-30 | 2023-09-29 | 江苏富乐徳石英科技有限公司 | Efficient energy-saving environment-friendly quartz ring preparation process |
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Application publication date: 20120808 |