CN105811926A - Ring oscillator circuit with own temperature and process corner calibration - Google Patents
Ring oscillator circuit with own temperature and process corner calibration Download PDFInfo
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- CN105811926A CN105811926A CN201610211913.7A CN201610211913A CN105811926A CN 105811926 A CN105811926 A CN 105811926A CN 201610211913 A CN201610211913 A CN 201610211913A CN 105811926 A CN105811926 A CN 105811926A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
- H03K3/0315—Ring oscillators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
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Abstract
The invention discloses a ring oscillator with own temperature and process corner calibration. A temperature detection circuit and a process corner detection circuit are added on the basis of the traditional ring oscillator circuit, and an analogue phase inverter circuit used in the traditional ring oscillator is improved; the new structure can automatically detect the change of the temperature and the process corner, and feed back the change of the temperature and the process corner to a voltage bias terminal of an analogue phase inverter, thereby calibrating the working frequency of the ring oscillator.
Description
Technical field
The present invention relates to mixed signal and field of analog integrated circuit, be specifically related to a kind of ring oscillator circuit carrying temperature and process corner calibration.
Background technology
Ring oscillator is the important module of analog radio frequency integrated circuit, is widely used in phaselocked loop and FPGA.The chip area taken due to ring oscillator is little, design is simply easy to integrated, low in energy consumption, so in SOC and pin-saving chip, widely using ring oscillator to produce clock signal.
Traditional ring oscillator, as it is shown in figure 1, generally formed by three grades or level Four analog inverter cascade, utilizes the phase contrast between phase inverter to form positive feedback and produces concussion.Traditional ring oscillator structure is simple, often adopts the voltage offset electric circuit of single structure, utilizes change in voltage to control the electric current of analog inverter, thus changing the frequency of ring oscillator.
Although traditional ring oscillator structure is simply easy to integrated, but owing to the biasing of conventional ring oscillator is excessively simple, the simply rough frequency removing control ring oscillator with an external voltage, and this external voltage immobilizes, when causing variations in temperature and process corner change, the frequency fluctuation of ring oscillator output is bigger.In SOC and pin-saving chip etc. are applied, owing to yield is huge, the process corner of different batches product often has very big gap, and along with the difference of application scenario, the change of temperature is also unavoidable.If process corner and variations in temperature cause the change adjustable extent beyond circuit of frequency, then can affect the yield of product, particularly in the IP product comprising ring oscillator, it is often desired to ring oscillator applied widely, can minimum level by the impact of process corner and temperature.
Summary of the invention
It is an object of the invention to provide a kind of ring oscillator circuit carrying temperature and process corner calibration, to overcome the defect existed in prior art.
The purpose of the present invention is achieved through the following technical solutions:
A kind of ring oscillator circuit carrying temperature and process corner calibration, it includes four phase inverters, biasing circuit, temperature sensing circuit, a process corner detection circuit, and described phase inverter is analog inverter；
Four phase inverters sequentially join end to end, and constitute loop configuration, and each phase inverter has three bias voltages to control end, is VB, VT, VC respectively；
Temperature sensing circuit does not need any external input signal, directly produces bias voltage VT according to internal detection circuitry, goes the bias voltage controlling four phase inverters to control end.
Process corner detection circuit does not need any external input signal, directly produces bias voltage VC according to internal detection circuitry, goes the bias voltage controlling four phase inverters to control end.
Preferably, described temperature sensing circuit is by the first NMOS tube, current source, first operational amplifier, the first resistance, the second resistance, the 3rd resistance, the second NMOS tube and a BJT pipe composition, the size of the first NMOS tube is L=2 μ, W=50 μ, its source electrode connects power vd D, grid and drain electrode short circuit and is connected to the input of current source, the output head grounding of current source；The positive input terminal of operational amplifier is connected to grid and the drain electrode of the first NMOS tube, the negative input end of operational amplifier is connected to the top of the second resistance, the outfan of operational amplifier is connected to the top of the first resistance, and the bottom of the first resistance connects the top formation of the second resistance and is connected in series structure；The grid of the second NMOS tube and drain electrode short circuit the top bias voltage VT that also output temperature controls simultaneously connecting the 3rd resistance, the source electrode of the second NMOS tube connects the outfan of the first operational amplifier；The bottom of the 3rd resistance connects the emitter stage of BJT pipe, the colelctor electrode of BJT pipe and base stage short circuit and is connected to ground.
Preferably, described process corner detection circuit is made up of a sheet internal resistance, off chip resistor, the second operational amplifier, the 3rd NMOS tube, the 4th NMOS tube, the first PMOS, second PMOS, the top of sheet internal resistance connects chip internal power vd D, bottom connects off chip resistor, and the bottom of off chip resistor is directly connected to the ground of outside pcb board；Sheet internal resistance and off chip resistor series connection form partial-pressure structure, the positive input terminal of the second operational amplifier is directly connected in the middle of sheet internal resistance and off chip resistor, the outfan of the negative input end connection of the second operational amplifier itself, the outfan of the second operational amplifier is also simultaneously connected to the grid of the 3rd NMOS tube, 3rd NMOS tube source ground, drain electrode connects the drain and gate of the first PMOS, and the source electrode of the first PMOS connects chip internal power vd D；The base stage of the second PMOS is connected with the base stage of the first PMOS, and the source electrode of the second PMOS connects power vd D, and drain electrode connects the drain and gate of the 4th NMOS tube the bias voltage VC of output process corner control simultaneously, the source ground of the 4th NMOS tube.
Preferably, described phase inverter is analog inverter, and this analog inverter circuit is made up of the 3rd PMOS, the 4th PMOS, the 5th PMOS, the 6th PMOS, the 7th PMOS, the 8th PMOS and the 5th NMOS tube, the 6th NMOS tube, the 7th NMOS tube, the 8th NMOS tube, the 9th NMOS tube；The source electrode of the 3rd PMOS connects power vd D, grid and drain electrode short circuit and is connected to the drain electrode of the 5th NMOS tube；The source electrode of the 4th PMOS meets power vd D, and grid connects external voltage Vctrl, and drain electrode connects the drain electrode of the 5th NMOS tube；The source electrode of the 5th PMOS meets power vd D, and grid connects external voltage Vctrl, and drain electrode connects the drain electrode of the 6th NMOS tube；The source electrode of the 6th PMOS connects power vd D, grid and drain electrode short circuit and is connected to the drain electrode of the 6th NMOS tube；The source electrode of the 7th PMOS connects power vd D, and grid connects drain electrode and the output end vo utp of the 8th PMOS；The source electrode of the 8th PMOS connects power vd D, and grid connects drain electrode and the output end vo utn of the 7th PMOS；The grid of the 5th NMOS tube connects input signal Vinp, and the grid of the 6th NMOS tube connects input signal Vinn, and the 5th NMOS tube is connected with the source electrode of the 6th NMOS tube and is simultaneously connected with the drain electrode of the 7th NMOS tube, the 8th NMOS tube and the 9th NMOS tube；The grid of the 7th NMOS tube connects control voltage VB, source ground；The grid of the 8th NMOS tube connects control voltage VC, source ground；The grid of the 9th NMOS tube connects control voltage VT, source ground.
Preferably, described biasing circuit is by the 9th PMOS, the tenth PMOS, the 11st PMOS, the 12nd PMOS, the 13rd PMOS, the 14th PMOS, the first switch, second switch, the 3rd switch and the tenth NMOS tube composition；The source electrode of the 9th PMOS connects power vd D, and drain electrode connects the source electrode of the tenth PMOS, and the grid of the 9th PMOS connects the grid of the tenth PMOS and is simultaneously connected with external voltage Vbias；The drain electrode of the tenth PMOS connects one end of the first switch, and the other end of the first switch connects the drain electrode of the tenth NMOS tube；The source electrode of the 11st PMOS connects power vd D, and drain electrode connects the source electrode of the 12nd PMOS, and the grid of the 11st PMOS connects the grid of the 12nd PMOS and is simultaneously connected with external voltage Vbias；The drain electrode of the 12nd PMOS connects one end of second switch, and the other end of second switch connects the drain electrode of the tenth NMOS tube；The source electrode of the 13rd PMOS connects power vd D, and drain electrode connects the source electrode of the 14th PMOS, and the grid of the 13rd PMOS connects the grid of the 14th PMOS and is simultaneously connected with external voltage Vbias；The drain electrode of the 14th PMOS connects one end of the 3rd switch, and the other end of the 3rd switch connects the drain electrode of the tenth NMOS tube；9th PMOS, the tenth PMOS size be W/L；11st PMOS, the 12nd PMOS size be 2W/L；13rd PMOS, the 14th PMOS size be 4W/L；The grid of the tenth NMOS tube is connected to the drain electrode of itself and is simultaneously connected with the bias voltage VB that biasing circuit produces, source ground.
Beneficial effects of the present invention:
The ring oscillator circuit carrying temperature and process corner calibration of the present invention includes four analog inverter, one biasing circuit, one temperature sensing circuit, one process corner detection circuit, compared to traditional ring oscillator circuit, a kind of ring oscillator circuit carrying temperature and process corner calibration adds temperature sensing circuit and process corner detection circuit；The temperature sensing circuit temperature by larger-size metal-oxide-semiconductor (a first NMOS tube) induction chip, variations in temperature is converted into change in voltage, thus utilizing the voltage of change to go the voltage bias end controlling analog inverter to reach to change the purpose of frequency；Process corner detection circuit is the intrinsic standoff ratio that the resistance (sheet internal resistance) by chip internal compares that with the precision resister of a chip exterior (off chip resistor) generation is different, this chip internal resistance produces the change of resistance with process corner change, by producing different intrinsic standoff ratios from the comparison of chip exterior precision resister, the voltage of this change is utilized to control the voltage bias end of analog inverter, produces to change the effect of frequency.Analog inverter within this ring oscillator is biased voltage generation circuit, the control of temperature sensing circuit and process corner detection circuit simultaneously so that frequency can adjust automatically according to the change of temperature and process corner, has reached temperature and the purpose of process corner calibration.
Accompanying drawing explanation
Fig. 1 is traditional ring oscillator overall structure block diagram.
Fig. 2 is a kind of ring oscillator overall structure block diagram carrying temperature and process corner calibration of the present invention.
Fig. 3 is the circuit diagram of temperature sensing circuit in the present invention.
Fig. 4 is the circuit diagram of process corner detection circuit in the present invention.
Fig. 5 is the circuit diagram of analog inverter circuit in the present invention.
Fig. 6 is the circuit diagram of biasing circuit in the present invention.
Detailed description of the invention
Below in conjunction with specific embodiment, the invention will be further described.
In conjunction with Fig. 2, a kind of ring oscillator circuit carrying temperature and process corner calibration, it includes four phase inverters, biasing circuit, temperature sensing circuit, a process corner detection circuit, and described phase inverter is analog inverter；
Four phase inverters join end to end respectively, constitute loop configuration, and each phase inverter has three bias voltages to control end, is VB, VT, VC respectively；
Temperature sensing circuit does not need any external input signal, directly produces bias voltage VT according to internal detection circuitry, goes the bias voltage controlling four phase inverters to control end.
Process corner detection circuit does not need any external input signal, directly produces bias voltage VC according to internal detection circuitry, goes the bias voltage controlling four phase inverters to control end.
These four phase inverters join end to end, constitute loop configuration, and the negative output terminal of first three analog inverter connects the positive input terminal of rear stage analog inverter, the positive output end of first three analog inverter connects the negative input end of rear stage analog inverter, the negative output terminal of afterbody analog inverter connects the negative input end of first order analog inverter, and the positive output end of afterbody analog inverter connects the positive input terminal of first order analog inverter.
In preferred embodiment, in conjunction with Fig. 3, described temperature sensing circuit is by the first NMOS tube (31), current source (32), first operational amplifier (33), first resistance (35), the second resistance (34), the 3rd resistance (37), the second NMOS tube (36) and BJT pipe (38) composition, the size of the first NMOS tube (31) is L=2 μ, W=50 μ, its source electrode meets power vd D, grid and drain electrode short circuit and the input being connected to current source (32), the output head grounding of current source (32)；The positive input terminal of operational amplifier (33) is connected to grid and the drain electrode of the first NMOS tube (31), the negative input end of operational amplifier (33) is connected to the top of the second resistance (34), the outfan of operational amplifier (33) is connected to the top of the first resistance (35), and the bottom of the first resistance (35) connects the top formation of the second resistance (34) and is connected in series structure；The grid of the second NMOS tube (36) and drain electrode short circuit the top bias voltage VT that also output temperature controls simultaneously connecting the 3rd resistance (37), the source electrode of the second NMOS tube (36) connects the outfan of the first operational amplifier (33)；The emitter stage of bottom connection BJT pipe (38) of the 3rd resistance (37), the colelctor electrode of BJT pipe (38) and base stage short circuit are also connected to ground.
This temperature sensing circuit does not need any external input signal, its large-size the first NMOS tube temperature sensor change within utilization is thus producing the voltage difference varied with temperature, this change in voltage is used to control the voltage bias end of analog inverter, compensates the frequency change caused by variations in temperature.Described temperature sensing circuit comprises larger-size first NMOS tube, the first NMOS tube of this size and current source combination, variations in temperature can be changed into change in voltage；Coordinate clamp circuit and BJT pipe, the change in voltage that large scale metal-oxide-semiconductor exports can be exported in BJT collector stabilization.
In preferred embodiment, in conjunction with Fig. 4, described process corner detection circuit is made up of a sheet internal resistance (41), off chip resistor (42), the second operational amplifier (43), the 3rd NMOS tube (45), the 4th NMOS tube (47), the first PMOS (46), second PMOS (48), the top of sheet internal resistance (41) connects chip internal power vd D, bottom connects off chip resistor (42), and the bottom of off chip resistor (42) is directly connected to the ground of outside pcb board；Sheet internal resistance (41) and off chip resistor (42) series connection form partial-pressure structure, the positive input terminal of the second operational amplifier (43) is directly connected in the middle of sheet internal resistance (41) and off chip resistor (42), the outfan of the negative input end connection of the second operational amplifier (43) itself, the outfan of the second operational amplifier (43) is also simultaneously connected to the grid of the 3rd NMOS tube (45), 3rd NMOS tube (45) source ground, drain electrode connects the drain and gate of the first PMOS (44), the source electrode of the first PMOS (44) connects chip internal power vd D；The base stage of the second PMOS (46) is connected with the base stage of the first PMOS (44), the source electrode of the second PMOS (46) connects power vd D, drain electrode connects the drain and gate of the 4th NMOS tube (47) the bias voltage VC of output process corner control simultaneously, the source ground of the 4th NMOS tube (47).Described off chip resistor (42) is precision resister.
This process corner detection circuit does not need any external input signal, it utilizes the sheet internal resistance of chip and the high-precision sheet external resistance of chip exterior to do intrinsic standoff ratio relatively, because the resistance of chip internal resistance is with process corner change but the resistance of chip exterior precision resister is not affected by process corner, the voltage that the bleeder circuit that two resistant series are formed by connecting produces changes with process corner, the bias voltage that this bleeder circuit produces is used for controlling a voltage bias end of analog inverter, compensates the frequency change caused by process corner change.
In preferred embodiment, in conjunction with Fig. 5, described phase inverter is analog inverter, and this analog inverter circuit is made up of the 3rd PMOS (51), the 4th PMOS (52), the 5th PMOS (53), the 6th PMOS (54), the 7th PMOS (55), the 8th PMOS (56) and the 5th NMOS tube (57), the 6th NMOS tube (58), the 7th NMOS tube (59), the 8th NMOS tube (510), the 9th NMOS tube (511)；The source electrode of the 3rd PMOS (51) connects power vd D, grid and drain electrode short circuit and is connected to the drain electrode of the 5th NMOS tube (57)；The source electrode of the 4th PMOS (52) meets power vd D, and grid connects external voltage Vctrl, and drain electrode connects the drain electrode of the 5th NMOS tube (57)；The source electrode of the 5th PMOS (53) meets power vd D, and grid connects external voltage Vctrl, and drain electrode connects the drain electrode of the 6th NMOS tube (58)；The source electrode of the 6th PMOS (54) connects power vd D, grid and drain electrode short circuit and is connected to the drain electrode of the 6th NMOS tube (58)；The source electrode of the 7th PMOS (55) connects power vd D, and grid connects drain electrode and the output end vo utp of the 8th PMOS (56)；The source electrode of the 8th PMOS (56) connects power vd D, and grid connects drain electrode and the output end vo utn of the 7th PMOS (55)；The grid of the 5th NMOS tube (57) connects input signal Vinp, the grid of the 6th NMOS tube (58) connects input signal Vinn, and the 5th NMOS tube (57) is connected with the source electrode of the 6th NMOS tube (58) and is simultaneously connected with the drain electrode of the 7th NMOS tube (59), the 8th NMOS tube (510) and the 9th NMOS tube (511)；The grid of the 7th NMOS tube (59) connects control voltage VB, source ground；The grid of the 8th NMOS tube (510) connects control voltage VC, source ground；The grid of the 9th NMOS tube (511) connects control voltage VT, source ground.
In preferred embodiment, in conjunction with Fig. 6, described biasing circuit is by the 9th PMOS (61), the tenth PMOS (62), the 11st PMOS (63), the 12nd PMOS (64), the 13rd PMOS (65), the 14th PMOS (66), the first switch (S1), second switch (S2), the 3rd switch (S3) and the tenth NMOS tube (67) composition；The source electrode of the 9th PMOS (61) connects power vd D, drain electrode connects the source electrode of the tenth PMOS (62), and the grid of the 9th PMOS (61) connects the grid of the tenth PMOS (62) and is simultaneously connected with external voltage Vbias；The drain electrode of the tenth PMOS (62) connects one end of the first switch (S1), and the other end of the first switch (S1) connects the drain electrode of the tenth NMOS tube (67)；The source electrode of the 11st PMOS (63) connects power vd D, drain electrode connects the source electrode of the 12nd PMOS (64), and the grid of the 11st PMOS (63) connects the grid of the 12nd PMOS (64) and is simultaneously connected with external voltage Vbias；The drain electrode of the 12nd PMOS (64) connects one end of second switch (S2), and the other end of second switch (S2) connects the drain electrode of the tenth NMOS tube (67)；The source electrode of the 13rd PMOS (65) connects power vd D, drain electrode connects the source electrode of the 14th PMOS (66), and the grid of the 13rd PMOS (65) connects the grid of the 14th PMOS (66) and is simultaneously connected with external voltage Vbias；The drain electrode of the 14th PMOS (66) connects one end of the 3rd switch (S3), and the other end of the 3rd switch (S3) connects the drain electrode of the tenth NMOS tube (67)；9th PMOS (61), the tenth PMOS (62) size be W/L；11st PMOS (63), the 12nd PMOS (64) size be 2W/L；13rd PMOS (65), the 14th PMOS (66) size be 4W/L；The grid of the tenth NMOS tube (67) is connected to the drain electrode of itself and is simultaneously connected with the bias voltage VB that biasing circuit produces, source ground.
Above example is merely to illustrate technical scheme; but not limiting the scope of the invention; although having made to explain to the present invention with reference to preferred embodiment; it will be understood by those within the art that; technical scheme can be modified or equivalent replacement, without deviating from the spirit and scope of technical solution of the present invention.
Claims (5)
1. the ring oscillator circuit carrying temperature and process corner calibration, it is characterised in that: it includes four phase inverters, biasing circuit, temperature sensing circuit, a process corner detection circuit, and described phase inverter is analog inverter；
Four phase inverters sequentially join end to end, and constitute loop configuration, and each phase inverter has three bias voltages to control end, is VB, VT, VC respectively；
Temperature sensing circuit does not need any external input signal, directly produces bias voltage VT according to internal detection circuitry, goes the bias voltage controlling four phase inverters to control end.
Process corner detection circuit does not need any external input signal, directly produces bias voltage VC according to internal detection circuitry, goes the bias voltage controlling four phase inverters to control end.
2. a kind of ring oscillator circuit carrying temperature and process corner calibration according to claim 1, it is characterized in that: described temperature sensing circuit is by the first NMOS tube (31), current source (32), first operational amplifier (33), first resistance (35), second resistance (34), 3rd resistance (37), second NMOS tube (36) and BJT pipe (38) composition, the size of the first NMOS tube (31) is L=2 μ, W=50 μ, its source electrode meets power vd D, grid and drain electrode short circuit and the input being connected to current source (32), the output head grounding of current source (32)；The positive input terminal of operational amplifier (33) is connected to grid and the drain electrode of the first NMOS tube (31), the negative input end of operational amplifier (33) is connected to the top of the second resistance (34), the outfan of operational amplifier (33) is connected to the top of the first resistance (35), and the bottom of the first resistance (35) connects the top formation of the second resistance (34) and is connected in series structure；The grid of the second NMOS tube (36) and drain electrode short circuit the top bias voltage VT that also output temperature controls simultaneously connecting the 3rd resistance (37), the source electrode of the second NMOS tube (36) connects the outfan of the first operational amplifier (33)；The emitter stage of bottom connection BJT pipe (38) of the 3rd resistance (37), the colelctor electrode of BJT pipe (38) and base stage short circuit are also connected to ground.
3. a kind of ring oscillator circuit carrying temperature and process corner calibration according to claim 1, it is characterized in that: described process corner detection circuit is by a sheet internal resistance (41), one off chip resistor (42), second operational amplifier (43), 3rd NMOS tube (45), 4th NMOS tube (47), first PMOS (46), second PMOS (48) forms, the top of sheet internal resistance (41) connects chip internal power vd D, bottom connects off chip resistor (42), the bottom of off chip resistor (42) is directly connected to the ground of outside pcb board；Sheet internal resistance (41) and off chip resistor (42) series connection form partial-pressure structure, the positive input terminal of the second operational amplifier (43) is directly connected in the middle of sheet internal resistance (41) and off chip resistor (42), the outfan of the negative input end connection of the second operational amplifier (43) itself, the outfan of the second operational amplifier (43) is also simultaneously connected to the grid of the 3rd NMOS tube (45), 3rd NMOS tube (45) source ground, drain electrode connects the drain and gate of the first PMOS (44), the source electrode of the first PMOS (44) connects chip internal power vd D；The base stage of the second PMOS (46) is connected with the base stage of the first PMOS (44), the source electrode of the second PMOS (46) connects power vd D, drain electrode connects the drain and gate of the 4th NMOS tube (47) the bias voltage VC of output process corner control simultaneously, the source ground of the 4th NMOS tube (47).
4. a kind of ring oscillator circuit carrying temperature and process corner calibration according to claim 1, it is characterized in that: described phase inverter is analog inverter, this analog inverter circuit is made up of the 3rd PMOS (51), the 4th PMOS (52), the 5th PMOS (53), the 6th PMOS (54), the 7th PMOS (55), the 8th PMOS (56) and the 5th NMOS tube (57), the 6th NMOS tube (58), the 7th NMOS tube (59), the 8th NMOS tube (510), the 9th NMOS tube (511)；The source electrode of the 3rd PMOS (51) connects power vd D, grid and drain electrode short circuit and is connected to the drain electrode of the 5th NMOS tube (57)；The source electrode of the 4th PMOS (52) meets power vd D, and grid connects external voltage Vctrl, and drain electrode connects the drain electrode of the 5th NMOS tube (57)；The source electrode of the 5th PMOS (53) meets power vd D, and grid connects external voltage Vctrl, and drain electrode connects the drain electrode of the 6th NMOS tube (58)；The source electrode of the 6th PMOS (54) connects power vd D, grid and drain electrode short circuit and is connected to the drain electrode of the 6th NMOS tube (58)；The source electrode of the 7th PMOS (55) connects power vd D, and grid connects drain electrode and the output end vo utp of the 8th PMOS (56)；The source electrode of the 8th PMOS (56) connects power vd D, and grid connects drain electrode and the output end vo utn of the 7th PMOS (55)；The grid of the 5th NMOS tube (57) connects input signal Vinp, the grid of the 6th NMOS tube (58) connects input signal Vinn, and the 5th NMOS tube (57) is connected with the source electrode of the 6th NMOS tube (58) and is simultaneously connected with the drain electrode of the 7th NMOS tube (59), the 8th NMOS tube (510) and the 9th NMOS tube (511)；The grid of the 7th NMOS tube (59) connects control voltage VB, source ground；The grid of the 8th NMOS tube (510) connects control voltage VC, source ground；The grid of the 9th NMOS tube (511) connects control voltage VT, source ground.
5. a kind of ring oscillator circuit carrying temperature and process corner calibration according to claim 1, it is characterized in that: described biasing circuit is by the 9th PMOS (61), the tenth PMOS (62), the 11st PMOS (63), the 12nd PMOS (64), the 13rd PMOS (65), the 14th PMOS (66), the first switch (S1), second switch (S2), the 3rd switch (S3) and the tenth NMOS tube (67) composition；The source electrode of the 9th PMOS (61) connects power vd D, drain electrode connects the source electrode of the tenth PMOS (62), and the grid of the 9th PMOS (61) connects the grid of the tenth PMOS (62) and is simultaneously connected with external voltage Vbias；The drain electrode of the tenth PMOS (62) connects one end of the first switch (S1), and the other end of the first switch (S1) connects the drain electrode of the tenth NMOS tube (67)；The source electrode of the 11st PMOS (63) connects power vd D, drain electrode connects the source electrode of the 12nd PMOS (64), and the grid of the 11st PMOS (63) connects the grid of the 12nd PMOS (64) and is simultaneously connected with external voltage Vbias；The drain electrode of the 12nd PMOS (64) connects one end of second switch (S2), and the other end of second switch (S2) connects the drain electrode of the tenth NMOS tube (67)；The source electrode of the 13rd PMOS (65) connects power vd D, drain electrode connects the source electrode of the 14th PMOS (66), and the grid of the 13rd PMOS (65) connects the grid of the 14th PMOS (66) and is simultaneously connected with external voltage Vbias；The drain electrode of the 14th PMOS (66) connects one end of the 3rd switch (S3), and the other end of the 3rd switch (S3) connects the drain electrode of the tenth NMOS tube (67)；9th PMOS (61), the tenth PMOS (62) size be W/L；11st PMOS (63), the 12nd PMOS (64) size be 2W/L；13rd PMOS (65), the 14th PMOS (66) size be 4W/L；The grid of the tenth NMOS tube (67) is connected to the drain electrode of itself and is simultaneously connected with the bias voltage VB that biasing circuit produces, source ground.
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| CN201610211913.7A CN105811926B (en) | 2016-04-06 | 2016-04-06 | A kind of ring oscillator circuit of included temperature and process corner calibration |
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| CN201610211913.7A CN105811926B (en) | 2016-04-06 | 2016-04-06 | A kind of ring oscillator circuit of included temperature and process corner calibration |
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| CN109450411A (en) * | 2019-01-04 | 2019-03-08 | 京东方科技集团股份有限公司 | Latch and its driving method and chip |
| CN110542849A (en) * | 2019-09-16 | 2019-12-06 | 广州粒子微电子有限公司 | Full MOS voltage and temperature monitoring method and circuit |
| TWI707220B (en) * | 2019-05-23 | 2020-10-11 | 瑞昱半導體股份有限公司 | Voltage control circuit and voltage control method |
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| CN109450411B (en) * | 2019-01-04 | 2022-10-11 | 京东方科技集团股份有限公司 | Latch and driving method thereof and chip |
| TWI707220B (en) * | 2019-05-23 | 2020-10-11 | 瑞昱半導體股份有限公司 | Voltage control circuit and voltage control method |
| CN110542849A (en) * | 2019-09-16 | 2019-12-06 | 广州粒子微电子有限公司 | Full MOS voltage and temperature monitoring method and circuit |
| WO2021212288A1 (en) * | 2020-04-20 | 2021-10-28 | 华为技术有限公司 | Voltage regulation circuit and method, operation system, and integrated module and circuit |
| WO2022127097A1 (en) * | 2020-12-15 | 2022-06-23 | 长鑫存储技术有限公司 | Process corner testing circuit and process corner testing method |
| US11573263B2 (en) | 2020-12-15 | 2023-02-07 | Changxin Memory Technologies, Inc. | Process corner detection circuit and process corner detection method |
| CN113746454A (en) * | 2021-08-30 | 2021-12-03 | 西安电子科技大学 | Ring oscillation circuit insensitive to power supply voltage and temperature variation |
| CN113746454B (en) * | 2021-08-30 | 2023-06-13 | 西安电子科技大学 | Ring oscillating circuit insensitive to power supply voltage and temperature variation |
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