CN105810796A - 一种量子点材料玻璃板及其制作方法 - Google Patents
一种量子点材料玻璃板及其制作方法 Download PDFInfo
- Publication number
- CN105810796A CN105810796A CN201610255276.3A CN201610255276A CN105810796A CN 105810796 A CN105810796 A CN 105810796A CN 201610255276 A CN201610255276 A CN 201610255276A CN 105810796 A CN105810796 A CN 105810796A
- Authority
- CN
- China
- Prior art keywords
- glass substrate
- glue
- glass plate
- point material
- quanta point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 134
- 239000000463 material Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000002096 quantum dot Substances 0.000 title abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000008569 process Effects 0.000 claims abstract description 6
- 239000003292 glue Substances 0.000 claims description 52
- 239000002131 composite material Substances 0.000 claims description 6
- 238000007688 edging Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 5
- 238000007789 sealing Methods 0.000 abstract description 3
- 239000012790 adhesive layer Substances 0.000 abstract 2
- 238000001723 curing Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 238000005728 strengthening Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004899 motility Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
- B32B7/14—Interconnection of layers using interposed adhesives or interposed materials with bonding properties applied in spaced arrangements, e.g. in stripes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B1/001—Devices without movable or flexible elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electroluminescent Light Sources (AREA)
- Optical Filters (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
本发明提供一种量子点材料玻璃板及其制作方法,以解决现有技术的量子点材料玻璃板在封口处无效发光区过宽、不利于窄边框设计、制程比较复杂等技术问题。量子点材料玻璃板包括一第一玻璃基板、一第二玻璃基板、一胶层,所述胶层包括至少一并排设置的胶框,每一胶框内均匀分布有量子点材料。本发明可以有效封装纳米级的量子点,有利于提高色域,增强显示效果;大幅减小量子玻璃板无效发光区域的宽度,可适于窄边框模组;可以大幅提高生产效率,降低加工成本。
Description
技术领域
本发明涉及一种显示设备技术,特别是一种量子点材料玻璃板及其制作方法。
背景技术
量子点材料是以半导体晶体为基础的,尺寸在1~100纳米之间,每一个粒子都是单晶。量子材料的优势来源于半导体纳米晶的量子限域效应,或者量子尺寸效应。当半导体晶体小到纳米尺度(1纳米大约等于头发丝宽度的万分之一),不同的尺寸就可以发出不同颜色的光。因此在现有新型材料中,量子点材料多应用于电子领域,如照明设备、移动设备及电视设备等。
在目前常见的白光LED背光中,其发光原理为蓝光LED激发黄色荧光粉,其色域饱和值(NTSC值)约在60%~80%之间。目前已有一种蓝光LED,激发纳米级的量子点,利用量子效应,可使NTSC达到100%以上,从而提升面板的显示品质。但这种量子点材料的封装是当前研究的重要命题,传统的做法是将量子点材料封装在玻璃管内,其制程较为复杂,且玻璃管封口处的无效发光区域比较宽,占用多余空间较大,不利于窄边框设计。按照显示模组的窄边框设计理念,玻璃板周围部件(不能显示影像的边框部分)的表面积越小越好。因此,如何能在保证量子点材料封装效果的前提下,尽可能地减少无效区域(非显示区域)。
发明内容
本发明的目的在于,解决现有技术的量子点材料玻璃板在封口处无效发光区过宽、不利于窄边框设计、制程比较复杂等技术问题。
为实现上述目的,本发明提供一种量子点材料玻璃板,包括一第一玻璃基板;一第二玻璃基板,与所述第一玻璃基板平行设置,其形状与所述第一玻璃基板相应;一胶层,设置于所述第一玻璃基板与所述第二玻璃基板之间,其边沿与所述第一玻璃基板、所述第二玻璃基板的边沿相应;其中,所述胶层包括至少一并排设置的胶框,每一胶框包括至少三个首尾依次相连的边框,每一胶框内均匀分布有量子点材料。
其中,所述第一玻璃基板、所述第二玻璃基板的形状、尺寸相同,位于同一胶层内的至少一胶框的形状、尺寸相同,所述胶框为矩形环状结构。所述边框的宽度范围为0.1mm~1mm,任意两个相邻胶框之间的距离为0.1mm~0.5mm,所述胶层边沿与所述第一玻璃基板边沿的距离范围为0.1mm~0.5mm。
为实现上述目的,本发明还提供一种量子点材料玻璃板的制作方法,包括如下步骤:获取一第一玻璃基板、一第二玻璃基板,二者平行设置;在所述第一玻璃基板朝向第二玻璃基板一侧的表面上设置一胶层,其边沿与所述第一玻璃基板的边沿相应;所述胶层包括至少一并排设置的胶框,每一胶框包括至少三个首尾依次相连的边框;在每一胶框内涂布量子点材料;将所述第二玻璃基板通过所述胶层贴合至所述第一玻璃基板;固化所述胶层,形成一复合玻璃板;沿着相邻两个胶框的交界处,将所述复合玻璃板切割成至少一量子点材料玻璃板;以及对所述量子点材料玻璃板进行磨边处理。
本发明的优点在于,可以有效封装纳米级的量子点,有利于提高色域,增强显示效果;同时,大幅减小量子玻璃板无效发光区域的宽度,可适于窄边框模组。本发明根据胶框的位置将整体玻璃板切割成多个量子玻璃板,可以大幅提高生产效率,降低加工成本。本发明只要对现有设备进行简单改造即可实现,灵活性高,工艺改造成本较低,适合大规模推广应用。
附图说明
图1为本发明实施例中量子点材料玻璃板剖面结构示意图;
图2为本发明实施例中量子点材料玻璃板胶层内胶框分布图;
图3为本发明实施例中量子点材料玻璃板制作方法的流程图;
图4为本发明实施例中切割后的量子点材料玻璃板与现有技术的量子点材料玻璃板在同尺寸条件下的对比图;
图中主要部件标识如下:
1、第一玻璃基板;2、第二玻璃基板;
3、胶层;4、胶框;
5、量子点材料;41、边框;
100、现有技术中量子点材料玻璃板;
101、第一无效区域;102、第二无效区域;
200、本实施例中量子点材料玻璃板;
201、第一无效区域;202、第二无效区域。
具体实施方式
以下参考说明书附图介绍本发明的一个优选实施例,证明本发明可以实施,这些实施例可以向本领域中的技术人员完整介绍本发明,使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的实施例来得以体现,本发明的保护范围并非仅限于文中提到的实施例。
在附图中,结构相同的部件以相同数字标号表示,各处结构或功能相似的组件以相似数字标号表示。附图所示的每一组件的尺寸和厚度是任意示出的,本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰,附图中有些地方适当夸大了部件的厚度。
当一个组件被描述为“安装至”或“连接至”另一组件时,二者可以理解为直接“安装”或“连接”,或者一个组件通过一中间组件间接“安装至”、或“连接至”另一个组件。
如图1、图2所示,本实施例涉及一种量子点材料玻璃板,包括一第一玻璃基板1及一第二玻璃基板2,两块玻璃基板平行设置,二者形状、尺寸相同,位置相应。
第一玻璃基板1、第二玻璃基板2的形状、尺寸相同,位于同一胶层内的多个胶框的形状、尺寸相同,本实施例优选5个,胶框4为矩形环状结构。第一玻璃基板1及一第二玻璃基板2可以选用特殊的强化玻璃,如经过化学强化处理的强化玻璃,可以提高量子板的强度。
本实施例包括一胶层3,设置于第一玻璃基板1与第二玻璃基板2之间,其边沿与第一玻璃基板1、第二玻璃基板2的边沿相应。胶层3边沿与第一玻璃基板1边沿的距离范围为0.1mm~0.5mm,本实施例优选0.3mm。
胶层3包括多个并排设置的胶框4,本实施例中优选五个,生产厂家可以根据需要调整胶框数量。本实施例中,胶框4即为用胶涂布成矩形环状的框,胶层3、胶框4采用的胶为UV光固化胶或电子束固化胶或热固化胶。每一胶框内均匀分布有量子点材料5,量子点材料包括但不限于铜铟硒材料、铜铟镓硒材料或碲化镉材料。任意两个相邻胶框4之间的距离为0.1mm~0.5mm,本实施例中优选为0.5mm。便于后续的切割操作,确保切割后量子点材料密封良好无泄漏,同时可以确保切割后无效区域较小,提高了整块玻璃基板的利用率。
每一胶框包括四个首尾依次相连的边框41,边框41的宽度范围为:0.1mm~1mm,本实施例中优选为0.5mm。相对于现有技术,边框宽度有了明显的减小,可以提高整块玻璃基板的利用率使得无效区间尽量小。
如图3所示,本实施例还提供一种量子点材料玻璃板的制作方法,包括以下步骤。
步骤S1)获取一第一玻璃基板、一第二玻璃基板,二者平行设置。第一玻璃基板1及一第二玻璃基板2可以选用特殊的强化玻璃,如经过化学强化处理的强化玻璃,可以提高量子板的强度。
步骤S2)在所述第一玻璃基板朝向第二玻璃基板一侧的表面上设置一胶层,其边沿与所述第一玻璃基板的边沿相应,也即第一玻璃基板、第二玻璃基板、胶层的边沿对齐。本实施例中,所述胶层包括四个并排设置的胶框,每一胶框为一矩形环状框,包括四个首尾依次相连的边框。胶层、胶框采用的胶为UV光固化胶或电子束固化胶或热固化胶。胶层3边沿与第一玻璃基板1边沿的距离范围为0.1mm~0.5mm,本实施例优选0.3mm。
步骤S3)在每一胶框内涂布量子点材料。量子点材料,又称为纳米晶,是一种由II-VI族或III-V族元素组成的纳米颗粒,量子点粒径一般介于1~10nm之间,量子点具有宽的激发谱和窄的发射谱,量子点发射光谱可以通过改变量子点的尺寸大小来控制,通过改变量子点尺寸和它的化学组成可以使其发射光谱覆盖整个可见光区。量子点材料包括但不限于铜铟硒材料、铜铟镓硒材料或碲化镉材料。
步骤S4)将所述第二玻璃基板通过所述胶层贴合至所述第一玻璃基板,两层玻璃基板通过胶层紧密贴合。
步骤S5)固化所述胶层,形成一复合玻璃板。固化过程是根据胶层所用的胶的类型来选择固化方式。若胶层为UV光固化胶,此处采用UV固化方式;若胶层为电子束固化胶,此处采用电子束固化方式;若胶层采用热固化胶,此处采用热固化方式。
步骤S6)沿着相邻两个胶框的交界处,将所述复合玻璃板切割成至少一量子点材料玻璃板。每一切割线皆为两个胶框之间的连接处,由于胶框为环状结构,其中的量子点材料也被密封良好。
步骤S7)对所述量子点材料玻璃板进行磨边处理,切割后的玻璃板边缘处有毛刺,需要打磨光滑。
经过步骤S1)-S7)的工艺过程,即可以制成合适的量子点材料玻璃板,接下来只要进行包装出货即可。
如图4所示,现有技术中的量子点材料玻璃板100包括第一无效区域101、第二无效区域102;本实施例制成量子点材料玻璃板200包括第一无效区域201、第二无效区域202;相同尺寸的两块量子点材料玻璃板,其结构不同,二者两部分无效区域的宽度有明显区别。本实施例制成的量子点材料玻璃板200与现有技术中的量子点材料玻璃板100对比,无效区域的宽度明显减小,使得玻璃板上可以显示影响的有效区域更大,适合窄边框的设计理念。
本发明的优点在于,可以有效封装纳米级的量子点材料,有利于提高色域,增强显示效果;同时,大幅减小量子玻璃板无效发光区域的宽度,可适于窄边框模组。本发明根据胶框的位置将整体玻璃板切割成多个量子玻璃板,可以大幅提高生产效率,降低加工成本。本发明只要对现有设备进行简单改造即可实现,操作方便,灵活性高,工艺改造成本较低,适合大规模推广应用。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (10)
1.一种量子点材料玻璃板,其特征在于,包括
一第一玻璃基板;
一第二玻璃基板,与所述第一玻璃基板平行设置,其形状与所述第一玻璃基板相应;
一胶层,设置于所述第一玻璃基板与所述第二玻璃基板之间,其边沿与所述第一玻璃基板、所述第二玻璃基板的边沿相应;
其中,所述胶层包括至少一并排设置的胶框,每一胶框包括至少三个首尾依次相连的边框,每一胶框内均匀分布有量子点材料。
2.根据权利要求1所述的量子点材料玻璃板,其特征在于,所述第一玻璃基板、所述第二玻璃基板的形状、尺寸相同,位于同一胶层内的至少一胶框的形状、尺寸相同。
3.根据权利要求1所述的量子点材料玻璃板,其特征在于,所述胶框为矩形环状结构。
4.根据权利要求1所述的量子点材料玻璃板,其特征在于,所述边框的宽度范围为0.1mm~1mm;任意两个相邻胶框之间的距离为0.1mm~0.5mm。
5.根据权利要求1所述的量子点材料玻璃板,其特征在于,所述胶层边沿与所述第一玻璃基板边沿的距离范围为0.1mm~0.5mm。
6.一种量子点材料玻璃板的制作方法,其特征在于,包括如下步骤:
获取一第一玻璃基板、一第二玻璃基板,二者平行设置;
在所述第一玻璃基板朝向第二玻璃基板一侧的表面上设置一胶层,其边沿与所述第一玻璃基板的边沿相应;所述胶层包括至少一并排设置的胶框,每一胶框包括至少三个首尾依次相连的边框;
在每一胶框内涂布量子点材料;
将所述第二玻璃基板通过所述胶层贴合至所述第一玻璃基板;
固化所述胶层,形成一复合玻璃板;
沿着相邻两个胶框的交界处,将所述复合玻璃板切割成至少一量子点材料玻璃板;以及对所述量子点材料玻璃板进行磨边处理。
7.根据权利要求6所述的量子点材料玻璃板的制作方法,其特征在于,所述第一玻璃基板、所述第二玻璃基板的形状、尺寸相同,位于同一胶层内的至少一胶框的形状、尺寸相同。
8.根据权利要求1所述的量子点材料玻璃板的制作方法,其特征在于,所述胶框为矩形环状结构。
9.根据权利要求1所述的量子点材料玻璃板的制作方法,其特征在于,所述边框的宽度范围为0.1mm~1mm;任意两个相邻胶框之间的距离为0.1mm~0.5mm。
10.根据权利要求1所述的量子点材料玻璃板的制作方法,其特征在于,所述胶层边沿与所述第一玻璃基板边沿的距离范围为0.1mm~0.5mm。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610255276.3A CN105810796A (zh) | 2016-04-21 | 2016-04-21 | 一种量子点材料玻璃板及其制作方法 |
US15/303,033 US10710876B2 (en) | 2016-04-21 | 2016-05-23 | Quantum dot glass plate and manufacturing method thereof |
PCT/CN2016/082953 WO2017181473A1 (zh) | 2016-04-21 | 2016-05-23 | 一种量子点材料玻璃板及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610255276.3A CN105810796A (zh) | 2016-04-21 | 2016-04-21 | 一种量子点材料玻璃板及其制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105810796A true CN105810796A (zh) | 2016-07-27 |
Family
ID=56458334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610255276.3A Pending CN105810796A (zh) | 2016-04-21 | 2016-04-21 | 一种量子点材料玻璃板及其制作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10710876B2 (zh) |
CN (1) | CN105810796A (zh) |
WO (1) | WO2017181473A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206474A (zh) * | 2016-08-31 | 2016-12-07 | 昆山国显光电有限公司 | 一种提高Frit封装机械强度的封装结构及其封装方法 |
CN107123725A (zh) * | 2017-05-02 | 2017-09-01 | 武汉纺织大学 | 量子点薄膜、量子点白光led及其封装方法 |
WO2019019253A1 (zh) * | 2017-07-24 | 2019-01-31 | 武汉华星光电技术有限公司 | 背光模块及液晶显示器 |
US10495923B2 (en) | 2017-07-24 | 2019-12-03 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Backlight module and liquid crystal display |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020017650A1 (en) * | 1997-11-18 | 2002-02-14 | Technologies & Devices | III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layer |
JP2003218385A (ja) * | 2002-01-10 | 2003-07-31 | Samsung Electronics Co Ltd | シリコン光素子及びこれを適用した発光ディバイス装置 |
CN104848168A (zh) * | 2015-04-10 | 2015-08-19 | 武汉华星光电技术有限公司 | 一种量子点膜片的制造方法 |
CN105226166A (zh) * | 2015-10-23 | 2016-01-06 | 易美芯光(北京)科技有限公司 | 一种量子点led结构及封装方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1358061A (en) * | 1971-05-21 | 1974-06-26 | Glaverbel | Methods of strengthening glass articles |
WO2014062135A1 (en) * | 2012-10-18 | 2014-04-24 | Tera-Barrier Films Pte Ltd | Encapsulation barrier stack |
WO2016032885A1 (en) * | 2014-08-25 | 2016-03-03 | Corning Incorporated | Sealed device and methods for making the same |
KR20160038325A (ko) * | 2014-09-30 | 2016-04-07 | 코닝정밀소재 주식회사 | 색변환용 기판, 그 제조방법 및 이를 포함하는 디스플레이 장치 |
CN104864318B (zh) * | 2015-06-12 | 2017-05-03 | 深圳市华星光电技术有限公司 | 背光模组及显示装置 |
CN205104479U (zh) * | 2015-10-09 | 2016-03-23 | 纳晶科技股份有限公司 | 一种封装结构与包含其的光电设备 |
-
2016
- 2016-04-21 CN CN201610255276.3A patent/CN105810796A/zh active Pending
- 2016-05-23 WO PCT/CN2016/082953 patent/WO2017181473A1/zh active Application Filing
- 2016-05-23 US US15/303,033 patent/US10710876B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020017650A1 (en) * | 1997-11-18 | 2002-02-14 | Technologies & Devices | III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layer |
JP2003218385A (ja) * | 2002-01-10 | 2003-07-31 | Samsung Electronics Co Ltd | シリコン光素子及びこれを適用した発光ディバイス装置 |
CN104848168A (zh) * | 2015-04-10 | 2015-08-19 | 武汉华星光电技术有限公司 | 一种量子点膜片的制造方法 |
CN105226166A (zh) * | 2015-10-23 | 2016-01-06 | 易美芯光(北京)科技有限公司 | 一种量子点led结构及封装方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206474A (zh) * | 2016-08-31 | 2016-12-07 | 昆山国显光电有限公司 | 一种提高Frit封装机械强度的封装结构及其封装方法 |
CN106206474B (zh) * | 2016-08-31 | 2019-12-13 | 昆山国显光电有限公司 | 一种提高Frit封装机械强度的封装结构及其封装方法 |
CN107123725A (zh) * | 2017-05-02 | 2017-09-01 | 武汉纺织大学 | 量子点薄膜、量子点白光led及其封装方法 |
CN107123725B (zh) * | 2017-05-02 | 2019-08-23 | 武汉纺织大学 | 量子点薄膜、量子点白光led及其封装方法 |
WO2019019253A1 (zh) * | 2017-07-24 | 2019-01-31 | 武汉华星光电技术有限公司 | 背光模块及液晶显示器 |
US10495923B2 (en) | 2017-07-24 | 2019-12-03 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Backlight module and liquid crystal display |
Also Published As
Publication number | Publication date |
---|---|
US10710876B2 (en) | 2020-07-14 |
US20170334716A1 (en) | 2017-11-23 |
WO2017181473A1 (zh) | 2017-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104064658B (zh) | 一种led显示屏及其3d显示装置 | |
US10048412B2 (en) | Quantum dot color filter substrate and manufacturing method thereof | |
US9966365B2 (en) | Display device and fabricating method | |
EP2757409B1 (en) | Liquid crystal display device comprising a blue light source and a quantum-dot colour generating structure and method of manufacturing said device | |
CN104566015B (zh) | 一种量子点背光模组以及显示装置 | |
US9823510B2 (en) | Quantum dot color film substrate, manufacturing method thereof and LCD apparatus | |
US10025139B2 (en) | Display device | |
CN105810796A (zh) | 一种量子点材料玻璃板及其制作方法 | |
CN108008565B (zh) | 一种基于自组装的量子点滤色膜的制备方法 | |
CN103207476B (zh) | 一种led背光液晶显示装置及其发光材料的涂覆方法 | |
TW201703308A (zh) | 電子元件中之半導體性粒子 | |
CN204314577U (zh) | 光学膜片组、背光模组以及液晶显示模组 | |
CN108051952B (zh) | 一种出光均匀的高色域直下式背光模组及其制作方法 | |
US9818917B2 (en) | Quantum dots (QD) glass cells, and the manufacturing methods and applications thereof | |
CN107807473B (zh) | 光转换材料封装结构、背光模组及显示装置 | |
US20170222096A1 (en) | Led light source structure and packaging method | |
CN104391347A (zh) | 一种量子点棱镜膜 | |
KR20130043294A (ko) | Led 패키지 및 이의 제조 방법 | |
CN105485573B (zh) | 一种高色域直下式led背光模组 | |
CN110998824A (zh) | 一种led晶粒转移方法 | |
CN204439860U (zh) | 一种量子点扩散膜 | |
Fan et al. | 30.2: Invited Paper: A RGB chip Full Color Active Matrix Micro‐LEDs Transparent Display with IGZO TFT Backplane | |
US9893248B2 (en) | Substrate for changing color of light emitting diode and method for producing same | |
CN107591469A (zh) | 一种基于csp封装结构的五面发光led的封装方法 | |
WO2021042386A1 (zh) | 一种led模块及led阵列模组 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160727 |
|
RJ01 | Rejection of invention patent application after publication |