CN105810592B - A kind of copper needle construction and preparation method thereof for stacked package - Google Patents
A kind of copper needle construction and preparation method thereof for stacked package Download PDFInfo
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- CN105810592B CN105810592B CN201610301929.7A CN201610301929A CN105810592B CN 105810592 B CN105810592 B CN 105810592B CN 201610301929 A CN201610301929 A CN 201610301929A CN 105810592 B CN105810592 B CN 105810592B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Abstract
The present invention provides a kind of copper needle construction and preparation method thereof for stacked package, and the copper needle construction includes: the structure of copper pillar bumps to be prepared；And copper needle construction, it is fixedly connected by welding on the structure of the copper pillar bumps to be prepared, the position of each copper needle is corresponding with copper pillar bumps position to be prepared, and plants and is fixedly welded on the structure of the copper pillar bumps to be prepared after each copper needle molding of the copper needle construction.Copper needle well prepared in advance is inserted directly into chip or encapsulating structure the position for needing to make copper pillar bumps by the present invention, to replace the technique of conventionally employed plating production copper post, is saved process time and process costs, is improved the ability of copper pin package storehouse.The vertical integration of the active electronic devices of multilayer can be achieved in the present invention, due to not needing to be reduced process requirements and its influence using techniques such as plating, the stacking ability and performance of POP stack encapsulation structure can be improved.The present invention can also efficiently use in PCB substrate, the technologies such as TSV.
Description
Technical field
The present invention relates to a kind of semiconductor package and methods, more particularly to a kind of copper needle for stacked package
Structure and preparation method thereof.
Background technique
As the function of integrated circuit is increasingly stronger, performance and integrated level is higher and higher and novel integrated circuit goes out
Existing, encapsulation technology plays an increasingly important role in IC products, shared in the value of entire electronic system
Ratio it is increasing.Meanwhile as integrated circuit feature size reaches nanoscale, transistor to more high density, it is higher when
The development of clock frequency, encapsulation also develop to more highdensity direction.As packaging density is continuously improved, chip and chip or chip
Challenge is had become with the narrow pitch electricity interlinkage and its reliability of package substrate.Traditional lead-free solder Bumping Technology has been difficult to full
The further growth requirement of sufficient thin space interconnection.Copper pillar bump interconnection technique, with its good electric property, deelectric transferred energy
Power is just becoming the key technology of next-generation chip narrow pitch interconnection.
Microelectronics Packaging provides the electrical connection for being connected to circuit substrate for semiconductor chip, while to fragile sensitivity
Chip is protected, convenient for testing, reprocessing, standardizing input, output port, and improve semiconductor chip and circuit substrate
Thermal mismatching.In order to comply with the demand of the continuous development and environmental protection decree of silicon-based semiconductor chip technology to microelectronics Packaging,
Microelectronics Packaging interconnection technique (structure and material) is also constantly developing: from wire bonding to flip-chip interconnection, from tin-lead/height
Kupper solder salient point is interconnected to the interconnection of lead-free solder salient point, is interconnected to copper pillar bump interconnection from solder bump.As next-generation chip
Interconnection technique is encapsulated, copper pillar bump interconnection is just gradually used by more and more chip package designs.Copper pillar bump technology makes
Pin pitch densification (Fine Pitch), low clearance, higher input and output, than C4 convex block have better reliability, therefore it is wide
It is general to be used in the technical fields such as PMIC, storage facilities, application processor.
However, traditional copper post technique generallys use the preparation of the methods of electroplating technology or chemical plating process, these techniques step
It is rapid complicated, it is difficult to prepare the copper post of larger thickness, and the equipment price needed is expensive, not only wastes time, and significantly
Improve production cost.
In view of the above, a kind of structure and simple, the inexpensive copper needle construction for stacked package of step are provided
And preparation method thereof be necessary.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of copper for stacked package
Needle construction and preparation method thereof, for solving the problem of copper pillar bump complex process higher cost in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of copper needle construction for stacked package
Preparation method, the preparation method make several copper needles comprising steps of step 1)；Step 2) provides a halftone, the net
Several holes are formed in version, the halftone are set on the structure of copper pillar bumps to be prepared, and make the position of each hole
It sets corresponding with the position of copper pillar bumps to be prepared in structure；Step 3), each hole interpolation in copper pillar bumps position to be prepared
Set copper needle.
A kind of preferred embodiment of preparation method as the copper needle construction for stacked package of the invention further includes step
It is rapid 4), each copper needle is fixedly connected on the structure of copper pillar bumps to be prepared using ball technique is planted.
A kind of preferred embodiment of preparation method as the copper needle construction for stacked package of the invention further includes step
Rapid: the first bronze medal needle construction is prepared on chip by step 5) by step 1)~step 4)；Step 6) provides support lining
Bottom, Yu Suoshu support substrate surface forms adhesive layer, and forms re-wiring layer in the bonding layer surface；Step 7) will be made
The chip for having copper needle construction is installed on the re-wiring layer；Step 8) passes through step 1)~4) by the second bronze medal needle construction
It is prepared on the re-wiring layer；Step 9) encapsulates each chip using encapsulating material, and exposes the second bronze medal needle construction, removing
The adhesive layer and support substrate are removed, the first encapsulating structure is formed；Step 10), by step 1)~step 4) by third copper
Needle construction is prepared in the re-wiring layer back side, provides the second encapsulating structure, and realize the first envelope by the third copper needle construction
Interconnection between assembling structure and the second encapsulating structure.
A kind of preferred embodiment of preparation method as the copper needle construction for stacked package of the invention, step 1) packet
It includes: a copper wire being provided, the copper wire is split into multiple copper needles.
A kind of preferred embodiment of preparation method as the copper needle construction for stacked package of the invention, step 1) are adopted
Several copper needles are prepared with the method for wire drawing machine or precise forming.
A kind of preferred embodiment of preparation method as the copper needle construction for stacked package of the invention, the copper needle
Length range be 50~200 μm, the range of copper needle diameter is 50-200 μm.
A kind of preferred embodiment of preparation method as the copper needle construction for stacked package of the invention, the copper needle
Structure is used for copper pillar bumps structure, the copper pillar bumps structure of POP stack encapsulation structure and the POP stacked package knot of chip
The combination of one or more of interconnection structure of structure.
Further, the chip includes one of one chip and compound chip.
A kind of preferred embodiment of preparation method as the copper needle construction for stacked package of the invention, step 3)
In, prior to the production solder adhesive layer of copper pillar bumps position to be prepared before being inserted into copper needle.
Further, the solder adhesive layer includes Sn layers and rosin
Further, making Sn layers of the technique includes evaporation process, electroplating technology, chemical plating process and printer
One of skill.
A kind of preferred embodiment of preparation method as the copper needle construction for stacked package of the invention, step 3) packet
Include: step 3-1), a large amount of copper needles are released on the halftone based on adsorbent equipment, so that the suitable copper needle insertion of Partial angle
Hole bottom is bonded in some perforations, and through solder adhesive layer；Step 3-2), hole will be inserted into based on adsorbent equipment
Copper needle in hole adsorbs again, is then released on the halftone again, and above step is repeated and makes institute's hole
Until being inside all plugged with copper needle.
Further, it is vacuum absorption device that the adsorbent equipment, which is selected,.
The present invention also provides a kind of copper needle constructions for stacked package, comprising: the structure of copper pillar bumps to be prepared；With
And copper needle construction, be fixedly connected by welding on the structure of the copper pillar bumps to be prepared, the position of each copper needle be intended to make
Standby copper pillar bumps position is corresponding, plants after each copper needle molding of the copper needle construction and is fixedly welded on the copper post to be prepared
On the structure of convex block.
As a kind of preferred embodiment of the copper needle construction for stacked package of the invention, the length range of the copper needle
It is 50-200 μm, the range of copper needle diameter is 50-200 μm.
As a kind of preferred embodiment of the copper needle construction for stacked package of the invention, each copper needle by solder layer and
Rosin is welded and fixed on the structure for being connected to the copper pillar bumps to be prepared.
As a kind of preferred embodiment of the copper needle construction for stacked package of the invention, the copper needle construction is used for core
The mutual connection of the copper pillar bumps structure of piece, the copper pillar bumps structure of POP stack encapsulation structure and POP stack encapsulation structure
The combination of one or more of structure.
Further, the chip includes one of one chip and compound chip.
A kind of preferred embodiment as the copper needle construction for stacked package of the invention, comprising: the first encapsulating structure
And second encapsulating structure, comprising: chip, the chip surface is formed with the first bronze medal needle construction, and is installed in the first rewiring
On layer；First re-wiring layer is formed with the second bronze medal needle construction on first re-wiring layer；Encapsulating material is packaged in institute
It states on chip and the first re-wiring layer, and exposes the second bronze medal needle construction；First encapsulating structure and the second encapsulation knot
Structure realizes interconnection by third copper needle construction.
As described above, the copper needle construction and preparation method thereof for stacked package of the invention, has below beneficial to effect
Fruit: copper needle well prepared in advance is inserted directly into chip or encapsulating structure the position for needing to make copper pillar bumps by the present invention, with
Instead of the technique of conventionally employed plating production copper post, process time and process costs are greatly saved, and substantially increase
The ability of copper pin package storehouse.The vertical integration of the active electronic devices of multilayer can be achieved in the present invention, due to not needing to use
The techniques such as plating, reduce process conditions demand, and reduce the influence of technological factor, when POP is stacked, replace tin with copper needle
Smaller spacing (Pitch) may be implemented in ball, can greatly improve the stacking ability and performance of POP stack encapsulation structure.
Present invention process and structure are simple, can effectively improve encapsulating structure performance, reduce cost, have in field of semiconductor manufacture extensive
Application prospect.
Detailed description of the invention
Each step of preparation method that Fig. 1~Figure 10 is shown as the copper needle construction for stacked package of the invention is presented
Structural schematic diagram.
Figure 11~Figure 15 is shown as copper pillar bumps structure, the POP stacked package that copper needle construction of the invention is used for chip
The copper pillar bumps structure of structure and technique and structural schematic diagram in the interconnection structure of POP stack encapsulation structure.
Component label instructions
The structure of 101 copper pillar bumps to be prepared
102 halftones
103 Sn layers
104 rosin
105 bronze medal needles
106 adsorbent equipments
201 chips
202 re-wiring layers
105a the first bronze medal needle
105b the second bronze medal needle
105c third copper needle
203 support substrates
204 adhesive layers
205 encapsulating materials
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 1~Figure 15.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in diagram then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 1~Figure 15, the present embodiment provides a kind of preparation sides of 105 structure of copper needle for stacked package
Method, the preparation method comprising steps of
As shown in FIG. 1 to FIG. 2, step 1) is carried out first, makes several copper needles 105.
As shown in FIG. 1 to FIG. 2, as an example, step 1) includes: to provide a copper wire, the copper wire is split into multiple copper
Needle 105.It is not of the same race in different chip-packaging structures to meet depending on the length of the copper needle 105 can be according to process conditions
The demand of the pin of class.In the present embodiment, the length range of the copper needle 105 is 50~200 μm, and copper needle diameter is in 50-200
μm。
In addition, in step 1), it can also be using several copper needles as described in the preparation of the method for wire drawing machine or precise forming
105。
As shown in Fig. 3~Fig. 4, step 2) is then carried out, a halftone 102 is provided, is formed with several holes in the halftone 102
The halftone 102 is set on the structure 101 of copper pillar bumps to be prepared, and makes in the position and structure of each hole by hole
The position of copper pillar bumps to be prepared is corresponding.
As an example, the diameter of each hole is equal or slightly larger than the diameter of copper needle 105 in the halftone 102.
As an example, the production solder before being inserted into copper needle 105 prior to copper pillar bumps position to be prepared bonds in step 3)
Layer.In the present embodiment, the solder adhesive layer includes Sn layer 103 and rosin 104, makes the technique packet of the Sn layer 103
Include one of evaporation process, electroplating technology, chemical plating process and printing technology.Specifically, the work of the Sn layer 103 is made
Skill is printing technology.
As shown in Fig. 5~Figure 10, step 3) is finally carried out, in plant copper needle in each hole of copper pillar bumps position to be prepared
105。
Specifically, step 3) includes:
Step 3-1), a large amount of copper needles 105 are released on the halftone 102 based on adsorbent equipment 106, so that Partial angle
Suitable copper needle 105 is inserted into some perforations, and is bonded in hole bottom by solder adhesive layer；
Step 3-2), the copper needle 105 not being inserted into hole is adsorbed again based on adsorbent equipment 106, is then weighed
It is newly released on the halftone 102, is repeated until above step all to be plugged with copper needle 105 in institute's hole.
Preferably, it is vacuum absorption device that the adsorbent equipment 106, which is selected,.
Copper needle 105 well prepared in advance is inserted directly into chip or encapsulating structure by the present invention needs to make copper pillar bumps
Position greatly saves process time and process costs, and significantly to replace the technique of conventionally employed plating production copper post
Improve the ability of copper pin package storehouse.
As shown in Figure 11~Figure 13, copper pillar bumps structure, POP stack envelope of 105 structure of copper needle for chip 201
One or more of the copper pillar bumps structure of assembling structure and the interconnection structure of POP stack encapsulation structure combine,
In, the chip 201 includes one of one chip and compound chip.
In addition, the present embodiment further includes step 4), each copper needle 105 is fixedly connected on copper post to be prepared using ball technique is planted
On the structure 101 of convex block.
As shown in figure 11,105 structure of copper needle is used for the copper pillar bumps structure of chip 201, the pin as chip 201
It draws, when this example, further includes the steps that making projection cube structure in each upper surface copper needle 105a by planting ball reflux technique.
As shown in figure 14,105 structure of copper needle can be used for the copper pillar bumps structure and POP heap of chip 201 simultaneously
The copper pillar bumps structure of stacked encapsulating structure, production have the chip 201 of copper needle 105a structure to be connected to envelope in the form of upside-down mounting
On the re-wiring layer 202 for filling substrate, then, then by making copper on step 1)~step 4) Yu Suoshu re-wiring layer 202
Needle 105b structure realizes that the whole pin of encapsulating structure is drawn, as shown in figure 12.
As shown in figure 15,105 structure of copper needle can be used for the copper pillar bumps structure of chip 201, POP stack simultaneously
In the copper pillar bumps structure of encapsulating structure and the interconnection structure of POP stack encapsulation structure, production has copper needle 105a structure
Chip 201 is connected on the re-wiring layer 202 of package substrates in the form of upside-down mounting, then, passes through step 1)~step 4)
In making copper needle 105b structure on the re-wiring layer 202, realize that the whole pin of encapsulating structure is drawn, finally, passing through institute
The interconnection between copper needle 105c structure realization encapsulating structure and encapsulating structure is stated, as shown in figure 13.
Specifically, production above structure includes:
First bronze medal needle 105a structure is prepared on chip 201, such as Figure 11 institute by step 5) by step 1)~step 4)
Show；
Step 6) provides a support substrate 203, and 203 surface of Yu Suoshu support substrate forms adhesive layer 204, and in described
204 surface of adhesive layer forms re-wiring layer 202, as shown in figure 12；
The chip 201 for being prepared with copper needle 105a structure is installed on the re-wiring layer 202, such as Figure 12 by step 7)
It is shown；
Step 8) passes through step 1)~4) the second bronze medal needle 105b structure is prepared on the re-wiring layer 202, such as scheme
Shown in 12；
Step 9) encapsulates each chip 201 using encapsulating material 205, and exposes the second bronze medal needle 105b structure, removing removal institute
Adhesive layer 204 and support substrate 203 are stated, forms the first encapsulating structure, as shown in figure 13；
Third copper needle 105c structure is prepared in 202 back side of re-wiring layer by step 1)~step 4) by step 10),
Second encapsulating structure is provided, and is realized between the first encapsulating structure and the second encapsulating structure by the third copper needle 105c structure
Interconnection, as shown in figure 14.
As shown in Figure 10~Figure 13, the present embodiment also provides a kind of copper needle construction for stacked package, comprising: is intended to make
The structure 101 of standby copper pillar bumps；And copper needle construction, it is fixedly connected by welding in the structure of the copper pillar bumps to be prepared
On 101, the position of each copper needle 105 is corresponding with copper pillar bumps position to be prepared, each copper needle 105 molding of the copper needle construction
It plants and is fixedly welded on the structure of the copper pillar bumps to be prepared afterwards, each copper needle 105 of the copper needle construction can lead to
It crosses copper wire and splits molding, or formed using wire drawing machine or precise forming equipment.
As an example, the length range of the copper needle 105 is 50-200 μm, copper needle diameter is at 50-200 μm.
As an example, each copper needle 105 is welded and fixed by solder layer and rosin 104 and is connected to the copper pillar bumps to be prepared
Structure 101 on.
As shown in Figure 11~Figure 13, as an example, 105 structure of copper needle for chip 201 copper pillar bumps structure,
One or both of the copper pillar bumps structure of POP stack encapsulation structure and the interconnection structure of POP stack encapsulation structure
Combination of the above.Wherein, the chip 201 includes one of one chip and compound chip.
As shown in figure 11,105 structure of copper needle is used for the copper pillar bumps structure of chip 201, the pin as chip 201
It draws, when this example, each 105 upper surface of copper needle, which also makes, solder structure.
As shown in figure 12,105 structure of copper needle can be used for the copper pillar bumps structure and POP heap of chip 201 simultaneously
The copper pillar bumps structure of stacked encapsulating structure, production have the chip 201 of 105 structure of copper needle to be connected to encapsulation in the form of upside-down mounting
On the re-wiring layer 202 of substrate, 105 structure of copper needle then, on Yu Suoshu re-wiring layer 202 is further made, realizes envelope
The whole pin of assembling structure is drawn, as shown in figure 12.
As shown in figure 13,105 structure of copper needle can be used for the copper pillar bumps structure of chip 201, POP stack simultaneously
In the copper pillar bumps structure of encapsulating structure and the interconnection structure of POP stack encapsulation structure, production has the core of 105 structure of copper needle
Piece 201 is connected on the re-wiring layer 202 of package substrates in the form of upside-down mounting, Yu Suoshu re-wiring layer 202 enterprising one
Step production 105 structure of copper needle is realized that the whole pin of encapsulating structure is drawn, is encapsulated finally, being realized by 105 structure of copper needle
Interconnection between structure and encapsulating structure, as shown in figure 13.
One specific embodiment is as shown in figure 13 comprising the first encapsulating structure and the second encapsulating structure, comprising: core
Piece, 201 surface of chip is formed with the first bronze medal needle 105a structure, and is installed on the first re-wiring layer 202；First again
Wiring layer 202 is formed with the second bronze medal needle 105b structure on first re-wiring layer 202；Encapsulating material 205 is packaged in institute
It states on chip and the first re-wiring layer 202, and exposes the second bronze medal needle 105b structure；First encapsulating structure and second
Encapsulating structure realizes interconnection by third copper needle 105c structure.
As described above, 105 structure of copper needle and preparation method thereof for stacked package of the invention, has beneficial below
Effect: copper needle 105 well prepared in advance is inserted directly into chip or encapsulating structure the position for needing to make copper pillar bumps by the present invention
It sets, to replace the technique of conventionally employed plating production copper post, greatly saves process time and process costs, and mention significantly
The high ability of copper pin package storehouse.The vertical integration of the active electronic devices of multilayer can be achieved in the present invention, due to not needing
Using techniques such as plating, process conditions demand is reduced, and reduce the influence of technological factor, when POP is stacked, is taken with copper needle
Smaller spacing (Pitch) may be implemented in Dai Xiqiu, can greatly improve the stacking ability and property of POP stack encapsulation structure
Energy.Present invention process and structure are simple, can effectively improve encapsulating structure performance, reduce cost, have in field of semiconductor manufacture
Broad application prospect.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of preparation method of the copper needle construction for stacked package, which is characterized in that the preparation method comprising steps of
Step 1) makes several copper needles；
Step 2), provides a halftone, several holes is formed in the halftone, and the halftone is set to copper pillar bumps to be prepared
Structure on, and make the position of each hole corresponding with the position of copper pillar bumps to be prepared in structure；
Step 3), in plant copper needle in each hole of copper pillar bumps position to be prepared；
Each copper needle is fixedly connected on the structure of copper pillar bumps to be prepared by step 4) using ball technique is planted；
The copper needle construction is used for copper pillar bumps structure, the copper pillar bumps structure of POP stack encapsulation structure and the POP of chip
The combination of one or more of interconnection structure of stack encapsulation structure；
First bronze medal needle construction is prepared on chip by step 5) by step 1)~step 4)；
Step 6) provides a support substrate, and Yu Suoshu support substrate surface forms adhesive layer, and is formed in the bonding layer surface
Re-wiring layer；
The chip for being prepared with copper needle construction is installed on the re-wiring layer by step 7)；
Step 8) passes through step 1)~4) the second bronze medal needle construction is prepared on the re-wiring layer；
Step 9) encapsulates each chip using encapsulating material, and exposes the second bronze medal needle construction, and removing removes the adhesive layer and support
Substrate forms the first encapsulating structure；
Third copper needle construction is prepared in the re-wiring layer back side by step 1)~step 4), provides the second encapsulation by step 10)
Structure, and the interconnection between the first encapsulating structure and the second encapsulating structure is realized by the third copper needle construction.
2. the preparation method of the copper needle construction according to claim 1 for stacked package, it is characterised in that: step 1)
Include: that a copper wire is provided, the copper wire is split into multiple copper needles.
3. the preparation method of the copper needle construction according to claim 1 for stacked package, it is characterised in that: step 1)
Several copper needles are prepared using the method for wire drawing machine or precise forming.
4. the preparation method of the copper needle construction according to claim 1 for stacked package, it is characterised in that: the copper
The length range of needle is 50~200 μm, and the range of copper needle diameter is 50-200 μm.
5. the preparation method of the copper needle construction according to claim 1 for stacked package, it is characterised in that: the core
Piece includes one of one chip and compound chip.
6. the preparation method of the copper needle construction according to claim 1 for stacked package, it is characterised in that: step 3)
In, prior to the production solder adhesive layer of copper pillar bumps position to be prepared before being inserted into copper needle.
7. the preparation method of the copper needle construction according to claim 6 for stacked package, it is characterised in that: the weldering
Expect that adhesive layer includes Sn layers and rosin.
8. the preparation method of the copper needle construction according to claim 7 for stacked package, it is characterised in that: production institute
The technique for stating Sn layers includes one of evaporation process, electroplating technology, chemical plating process and printing technology.
9. the preparation method of the copper needle construction according to claim 6 for stacked package, it is characterised in that: step 3)
Include:
Step 3-1), a large amount of copper needles are released on the halftone based on adsorbent equipment, so that the suitable copper needle of Partial angle is inserted
Enter to some perforations, and hole bottom is bonded in by solder adhesive layer；
Step 3-2), the copper needle not being inserted into hole is adsorbed again based on adsorbent equipment, is then released to institute again
It states on halftone, is repeated until above step all to be plugged with copper needle in institute's hole.
10. the preparation method of the copper needle construction according to claim 9 for stacked package, it is characterised in that: described
It is vacuum absorption device that adsorbent equipment, which is selected,.
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| CN106783644A (en) * | 2017-01-13 | 2017-05-31 | 中芯长电半导体（江阴）有限公司 | A kind of two-sided fan-out-type wafer-level packaging method and encapsulating structure |
| CN106684006B (en) * | 2017-01-13 | 2022-04-01 | 盛合晶微半导体(江阴)有限公司 | Double-sided fan-out type wafer level packaging method and packaging structure |
| CN107644845A (en) * | 2017-09-06 | 2018-01-30 | 中芯长电半导体（江阴）有限公司 | The encapsulating structure and method for packing of fingerprint recognition chip |
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| EP0281900B1 (en) * | 1987-03-11 | 1993-06-09 | International Business Machines Corporation | Removable holder and method for mounting a flexible film semiconductor chip carrier on a circuitized substrate |
| CN1604319A (en) * | 2003-09-17 | 2005-04-06 | 因芬尼昂技术股份公司 | Interlinkage of chip core device and its making method |
| CN205595309U (en) * | 2016-05-09 | 2016-09-21 | 中芯长电半导体（江阴）有限公司 | A copper needle structure for heap encapsulation |
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| US20050062492A1 (en) * | 2001-08-03 | 2005-03-24 | Beaman Brian Samuel | High density integrated circuit apparatus, test probe and methods of use thereof |
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|---|---|---|---|---|
| EP0281900B1 (en) * | 1987-03-11 | 1993-06-09 | International Business Machines Corporation | Removable holder and method for mounting a flexible film semiconductor chip carrier on a circuitized substrate |
| CN1604319A (en) * | 2003-09-17 | 2005-04-06 | 因芬尼昂技术股份公司 | Interlinkage of chip core device and its making method |
| CN205595309U (en) * | 2016-05-09 | 2016-09-21 | 中芯长电半导体（江阴）有限公司 | A copper needle structure for heap encapsulation |
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Address after: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province (place of business: No.9 Dongsheng West Road, Jiangyin City) Patentee after: Shenghejing micro semiconductor (Jiangyin) Co.,Ltd. Address before: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: SJ Semiconductor (Jiangyin) Corp. |