CN105809865B - A kind of infrared theftproof detection device - Google Patents
A kind of infrared theftproof detection device Download PDFInfo
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- CN105809865B CN105809865B CN201610167155.3A CN201610167155A CN105809865B CN 105809865 B CN105809865 B CN 105809865B CN 201610167155 A CN201610167155 A CN 201610167155A CN 105809865 B CN105809865 B CN 105809865B
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- 238000001514 detection method Methods 0.000 title claims abstract description 52
- 230000005611 electricity Effects 0.000 claims description 9
- 229910002056 binary alloy Inorganic materials 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 claims description 7
- 230000000052 comparative effect Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 210000002683 foot Anatomy 0.000 claims description 5
- 210000001367 artery Anatomy 0.000 claims description 2
- 210000003462 vein Anatomy 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 1
- 230000009545 invasion Effects 0.000 abstract description 9
- 238000009434 installation Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000004069 differentiation Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B13/00—Burglar, theft or intruder alarms
- G08B13/18—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength
- G08B13/189—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems
- G08B13/19—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems using infrared-radiation detection systems
- G08B13/191—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using passive radiation detection systems using infrared-radiation detection systems using pyroelectric sensor means
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- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B25/00—Alarm systems in which the location of the alarm condition is signalled to a central station, e.g. fire or police telegraphic systems
- G08B25/01—Alarm systems in which the location of the alarm condition is signalled to a central station, e.g. fire or police telegraphic systems characterised by the transmission medium
- G08B25/04—Alarm systems in which the location of the alarm condition is signalled to a central station, e.g. fire or police telegraphic systems characterised by the transmission medium using a single signalling line, e.g. in a closed loop
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- Burglar Alarm Systems (AREA)
- Geophysics And Detection Of Objects (AREA)
Abstract
The invention discloses a kind of infrared theftproof detection device, the infrared theftproof detection device includes power supply, sensing unit, amplifying unit, comparing unit, rp unit, storage unit, control gate cell, oscillating unit, counting unit, number of pulses setup unit, control unit and output unit.Infrared theftproof detection device of the present invention can be promptly and accurately detection invade and position invasion position, there is high sensitivity, stable and reliable in work, simultaneously, it is applied to antitheft detection system, it can realize and host to is sent the alarm signal of all detectors in system by a public signal wire, circuit structure is enormously simplified, reduces installation, the workload safeguarded.
Description
Technical field
The present invention relates to electronic circuit technology field more particularly to a kind of infrared theftproof detection devices.
Background technology
The continuous improvement of living standard since with China's reform, requirement of the people to personal and property safety
It increasingly improves, antitheft detection system obtains more and more extensive answer as the critical facility of the accidents such as pre- rob-proof, theft
With.Currently widely used antitheft detection system is monitoring several infrared theftproof detection devices of deploying troops on garrison duty in region, can visit
The intrusion behavior being happened in monitoring region is surveyed, alarm is sent to host when invading, and is locked into invasion and puts.But tradition
The each detector of antitheft detection system and host between be required to a signal wire, for transmitting each detector position
Alarm signal, the signal wire being connected when detector quantity is more with host also just accordingly increases, it may be possible to which tens are very
To hundreds of, not only installation is inconvenient, and also increases cost, and brings difficulty to regular maintenance.
The content of the invention
It is described infrared it is an object of the invention to provide a kind of infrared theftproof detection device for above-mentioned technical problem
Line Anti-theft detection device is applied to antitheft detection system, can realize all detections in system through a public signal wire
The alarm signal of device sends host to, enormously simplifies circuit structure, reduces installation, the workload safeguarded, while this is infrared
Line Anti-theft detection device has the characteristics that high sensitivity, stable and reliable in work.
For this purpose, the present invention uses following technical scheme:
A kind of infrared theftproof detection device, including:Power supply, sensing unit, amplifying unit, comparing unit, rp unit,
Storage unit, control gate cell, oscillating unit, counting unit, number of pulses setup unit, control unit and output unit;
The power supply is used to power to entire infrared theftproof detection device;
The sensing unit is electrically connected with amplifying unit, for detecting whether have human body process, and sensor signal is defeated
Go out to amplifying unit;
The amplifying unit is electrically connected with comparing unit, for being output to comparison list after being amplified to sensor signal
Member;
The comparing unit is electrically connected with rp unit, for comparing sensor signal voltage numerical value and reference voltage number
Value, sends alarm signal according to comparative result, and comparative result is output to rp unit;
The rp unit is electrically connected with storage unit, for making storage unit reverse phase;
The storage unit is electrically connected with control gate cell, for keeping the alarm signal that sensor exports, and is being sensed
Triggering control gate cell conducting during device output alarm signal;
The control gate cell is electrically connected with oscillating unit, counting unit, output unit, is alarmed for being exported in sensor
The oscillator signal that oscillating unit generates is sent to counting unit and output unit during signal;
The oscillating unit is electrically connected with control unit, for generating oscillator signal;
The counting unit is electrically connected with number of pulses setup unit, carry out by the number of pulses to oscillator signal based on
Number;
The number of pulses setup unit is electrically connected with control unit, every for setting the oscillator signal of oscillating unit generation
Number of pulses in a cycle, so as to set respective markers for infrared theftproof detection device;
Described control unit is electrically connected with oscillating unit, and the number of pulses for working as oscillating unit generation reaches number of pulses
During the numerical value of setup unit setting, control oscillating unit stops oscillation, and counting unit is resetted;
The external host of output unit, the pulse for generating oscillating unit in sensor output alarm signal are sent out
It is sent to external host, the sensor that host is alarmed according to the different identifications of the number of pulses of reception.
Particularly, the amplifying unit includes triode Q2 and operational amplifier IC2, and the triode Q2 base stages connection passes
Feel unit, emitter ground connection, collector connection positive pole;The power pins connection power supply of the operational amplifier IC2, same to phase
The collector of input terminal connecting triode Q2, reverse inter-input-ing ending grounding, output terminal connection comparing unit.
Particularly, the comparing unit includes operational amplifier IC3 and potentiometer, and the operational amplifier IC3 power supplys draw
Foot connection power supply, in-phase input end connection amplifying unit, the movable leg of inverting input connection potentiometer, output terminal connection reverse phase
Unit;Two fixed feets connection power supply of the potentiometer.
Particularly, the storage unit includes NAND gate G9, NAND gate G10, capacitance C9, four resistance R14 and timer, institute
Two input terminals for stating NAND gate C9 connect the output terminal of rp unit and NAND gate G10, output terminal connection control door list respectively
Member;The output terminal of the first input end connection NAND gate G9 of the NAND gate G10, the second input terminal is through resistance R14 connection direct currents
Positive pole;The capacitance C9 and timer are arranged in parallel between the second input terminal and ground of NAND gate G10.
Particularly, the control gate cell includes NOT gate G1 and NAND gate G2, and the NOT gate G1 input terminals connect NAND gate
G2 output terminals, output terminal connection count unit and output unit;It is single that two input terminals of the NAND gate G2 connect storage respectively
Member and oscillating unit.
Particularly, the oscillating unit includes NOT gate G3, NAND gate G4 and capacitance C1 and resistance R1, the NOT gate G3 inputs
End connection NAND gate G4 output terminals, output terminal connection control gate cell;The first input end connection control of the NAND gate G4 is single
Through the 3rd NOT gate input terminal of resistance R1 connections, the capacitance C1 is parallel to NOT gate G3 output terminals and NAND gate for member, the second input terminal
Between the second input terminals of G4.
Particularly, the counting unit includes binary system serial counter, the binary system serial counter pulse input
End connection control gate cell, clear terminal connection control unit, pulse output end connection number of pulses setup unit.
Particularly, the number of pulses setup unit includes phase inverter, single-pole double-throw switch (SPDT), diode and resistance R2, institute
State phase inverter pulse input end connection count unit, phase inverter connect respectively per road pulse output end a single-pole double-throw switch (SPDT) and
One end of resistance R2, the other end connection output unit and control unit of the resistance R2 are connected in parallel to after one diode;Wherein,
Phase inverter is per road in output, and the cathode of the moved end connection diode of the single-pole double-throw switch (SPDT), two non-moving ends connect instead respectively
The pulse input end and pulse output end of phase device.
Particularly, described control unit includes the first trigger, the second trigger, capacitance C2, capacitance C3, resistance R3, electricity
R4, NOT gate G5, NAND gate G6, NOT gate G7, NAND gate G8 are hindered, the first flip-flop data input terminal connects output unit, when
Clock input terminal connects number of pulses setup unit, and reset terminal is grounded through capacitance C2, and set end ground connection, output terminal is through resistance R3 connections
Reset terminal, output end of oppisite phase connect the input end of clock of the second trigger;The second flip-flop data input terminal connection output
Unit, input end of clock connect the output end of oppisite phase of the first trigger, and reset terminal is grounded through capacitance C3, set end ground connection, output
End is through resistance R4 connection reset terminals, the input terminal all the way of output end of oppisite phase connection NAND gate C8;The NOT gate C5 input terminals difference
Connect NAND gate C6 output terminals and counting unit, output terminal connection oscillating unit;Two input terminals difference of the NAND gate C6
Connect NOT gate C7 output terminals and storage unit;The input terminal connection NAND gate C8 output terminals of the NOT gate C7;The NAND gate C8
Two input terminals connect the output end of oppisite phase of the first trigger and the second trigger respectively.
Particularly, the output unit includes triode Q1 and the base stage of resistance R5, the triode Q1 connect through resistance R5
Connect control gate cell and counter unit, the external host of emitter, collector connection number of pulses setup unit and control unit.
Infrared theftproof detection device proposed by the present invention, when sensing unit has detected that human body passes through, sensor letter
Number through amplifying unit, comparing unit, rp unit, storage unit be amplified, compared with a reference value, after reverse phase and signal keep
Output, control gate cell conducting, oscillating unit generate pulse by the way that gate cell is controlled to be sent to output unit and counting unit,
Counting unit number of pulses amount is counted, when the generation of each cycle that count value reaches the setting of number of pulses setup unit is shaken
During the quantity swung, control unit control oscillating unit stops oscillation, and counting unit is resetted, the external host of output unit, will
The pulse that oscillating unit each cycle generates is sent to host, and host has detected human body according to the number of pulses differentiation received
The position of the sensor of process sends alarm, and is locked into invasion and puts.The infrared theftproof detection device can be promptly and accurately
Detection invasion, and position invasion position, there is high sensitivity, stable and reliable in work, meanwhile, be applied to antitheft
Detection system can realize and send the alarm signal of all detectors in system to host by a public signal wire,
Circuit structure is enormously simplified, reduces installation, the workload safeguarded.
Description of the drawings
Fig. 1 is infrared theftproof detection device electrical block diagram provided in an embodiment of the present invention.
Fig. 2 is infrared theftproof detection device circuit diagram provided in an embodiment of the present invention.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples.It is understood that tool described herein
Body embodiment is used only for explaining the present invention rather than limitation of the invention.It also should be noted that for the ease of retouching
It states, part related to the present invention rather than full content is illustrated only in attached drawing, it is unless otherwise defined, used herein all
Technical and scientific term have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.Herein at this
The term used in the description of invention is intended merely to the purpose of description specific embodiment, it is not intended that in limiting this hair
It is bright.Term as used herein " and/or " include the arbitrary and all combinations of one or more relevant Listed Items.
Embodiment one
It refer to shown in Fig. 1, Fig. 2, Fig. 1 is the circuit structure of infrared theftproof detection device provided in an embodiment of the present invention
Schematic diagram, Fig. 2 are infrared theftproof detection device circuit diagrams provided in an embodiment of the present invention.
In the present embodiment, infrared theftproof detection device includes power supply 101, sensing unit 102, amplifying unit 103, compares
Unit 104, rp unit 105, storage unit 106, control gate cell 107, oscillating unit 108, counting unit 109, umber of pulse
Measure setup unit 110, control unit 111 and output unit 112.
The power supply 101 is used to power to entire infrared theftproof detection device, specifically includes;Transformer T1, rectifier bridge
VC1, voltage-stablizer V1, capacitance C10, capacitance C11, capacitance C12, capacitance C13.Wherein, transformer T1 input terminals connection external power supply,
The exchange side of output terminal connection rectifier bridge VC1, the input terminal of the DC side anode connection voltage-stablizer V1 of rectifier bridge VC1, DC side
Negativing ending grounding, other circuits of the output terminal connection infrared theftproof detection device of voltage-stablizer V1, common end grounding, capacitance C10
And capacitance C11 is connected in parallel between the input terminal and ground of voltage-stablizer V1, capacitance C12 and capacitance C13 are connected in parallel in voltage-stablizer
Between the output terminal and ground of V1.
The sensing unit 102 is electrically connected with amplifying unit 103, for detecting whether there is human body process, and by sensor
Signal output is specifically included to amplifying unit 103:Sensor IC 1 and resistance R6.Wherein, the power end connection of sensor IC 1 is straight
The other end ground connection of galvanic electricity source, signal end connection amplifying unit 103 and resistance R6, resistance R6.Sensor described in the present embodiment
IC1 uses pyroelectric infrared sensor, and concrete model P2288 is a kind of only to the infrared ray responsive semiconductor of human body radiation
Device, the output low frequency signal when there is human body to pass through before sensor.
The amplifying unit 103 is electrically connected with comparing unit 104, for being output to ratio after being amplified to sensor signal
Compared with unit 104, the letter of the base stage connection sensor IC 1 of triode Q2 and operational amplifier IC2, the triode Q2 is specifically included
Number end, emitter ground connection, collector connection positive pole;The power pins connection power supply of the operational amplifier IC2, with mutually defeated
Enter to hold the collector of connecting triode Q2, reverse inter-input-ing ending grounding, output terminal connection comparing unit 104.
The comparing unit 104 is electrically connected with rp unit 105, for comparing sensor signal voltage numerical value and benchmark electricity
Numerical value is pressed, alarm signal is sent according to comparative result, and comparative result is output to rp unit 105, is specifically included:Computing is put
Big device IC3 and potentiometer W1, the operational amplifier IC3 power pins connection power supply, in-phase input end concatenation operation amplifier
Output terminal, the movable leg of inverting input connection potentiometer W1 of IC2, output terminal connection rp unit 105;The potentiometer W1
Two fixed feets connection power supply.
The rp unit 105 is electrically connected with storage unit 106, for making 106 reverse phase of storage unit, specifically uses three poles
The output terminal of the base stage concatenation operation amplifier IC3 of pipe Q3, the triode Q3, emitter ground connection, collector connection storage are single
Member 106.
The storage unit 106 is electrically connected with control gate cell 107, for keeping the alarm signal that sensor exports, and
In sensor output alarm signal, triggering control gate cell 107 turns on, and specifically includes NAND gate G9 and NAND gate G10, described
The base stage of two input terminals difference connecting triode Q3 of NAND gate G9 and the output terminal of NAND gate G10, output terminal connection control
Gate cell 107;The output of the emitter and NAND gate G9 of two input terminals difference connecting triode Q3 of the NAND gate G10
End.
The storage unit 106 is electrically connected with control gate cell 107, for keeping the alarm signal that sensor exports, and
In sensor output alarm signal, triggering control gate cell 107 turns on, and specifically includes NAND gate G9, NAND gate G10, capacitance
The base stage and NAND gate of two input terminals of C9, resistance R14 and timer AN, the NAND gate G9 difference connecting triode Q3
The output terminal of G10, output terminal connection control gate cell 107;The first input end connection NAND gate G9's of the NAND gate G10 is defeated
Outlet, the second input terminal is through resistance R14 connection DC power anodes;The capacitance C9 and timer AN is arranged in parallel in NAND gate
Between the second input terminal and ground of G10.
The control gate cell 107 is electrically connected with oscillating unit 108, counting unit 109, output unit 112, for passing
The oscillator signal that oscillating unit 108 generates is sent to counting unit 109 and output unit 112 during sensor output alarm signal,
NOT gate G1 and NAND gate G2 are specifically included, the NOT gate G1 input terminals connect NAND gate G2 output terminals, output terminal connection count list
Member 109 and output unit 112;Two input terminals of the NAND gate connect the output terminal and oscillating unit of NAND gate G9 respectively
108。
The oscillating unit 108 is electrically connected with control unit 111, for generating oscillator signal, is specifically included:NOT gate G3,
NAND gate G4 and capacitance C1 and resistance R1, the NOT gate G3 input terminals connect NAND gate G4 output terminals, output terminal connection NAND gate
The input terminal of G2;The first input end connection control unit 111 of the NAND gate G4, the second input terminal is through resistance R1 connection NOT gates
G3 input terminals, the capacitance C1 are parallel between the second input terminal of NOT gate G3 output terminals and NAND gate G4.
The counting unit 109 is electrically connected with number of pulses setup unit 110, for the number of pulses to oscillator signal into
Row counts, the specific pulse input end connection NOT gate using binary system serial counter C1, the binary system serial counter C1
The output terminal of G1, clear terminal connection control unit 111, pulse output end connection number of pulses setup unit 110.
The number of pulses setup unit 110 is electrically connected with control unit 111, for setting the generation of oscillating unit 108
Number of pulses in each cycle, so as to set respective markers for infrared theftproof detection device, specifically includes:Phase inverter P1,
First to the 6th single-pole double-throw switch (SPDT) K1, K2, K3, K4, K5, K6, first to the 6th diode D1, D2, D3, D4, D5, D6 and electricity
Hinder R2, the pulse output end of the pulse input end connection binary system serial counter C1 of the phase inverter P1, the of phase inverter P1
One pulse output end, which is connected, is connected in parallel to one end of resistance R2 after the first single-pole double-throw switch (SPDT) K1 and the first diode, with such
It pushes away, until being connected in parallel to electricity after the 6th pulse output end series connection the 6th single-pole double-throw switch (SPDT) K6 and the 6th diode D6 of phase inverter P1
Hinder one end of R2, the other end connection output unit 112 and control unit 111 of the resistance R2;Wherein, phase inverter P1 is defeated per road
In going out, the cathode of the moved end connection diode of the single-pole double-throw switch (SPDT), two non-moving ends connect the pulse of phase inverter P1 respectively
Input terminal and pulse output end.
Single 111 yuan of the control is electrically connected with oscillating unit 108, and the number of pulses for working as the generation of oscillating unit 108 reaches
During the numerical value set to number of pulses setup unit, control oscillating unit 108 stops oscillation, and counting unit 109 is resetted, and has
Body include the first trigger F1, the second trigger F2, capacitance C2, capacitance C3, resistance R3, resistance R4, NOT gate G5, NAND gate G6,
NOT gate G7, NAND gate G8, the first trigger F1 data input pins connect output unit 112, and input end of clock connects six
The common port of the anode of diode D1, D2, D3, D4, D5, D6, reset terminal are grounded through capacitance C2, set end ground connection, output terminal warp
Resistance R3 connection reset terminals, output end of oppisite phase connect the input end of clock of the second trigger F2;The number of the second trigger F2
Output unit 112 is connected according to input terminal, input end of clock connects the output end of oppisite phase of the first trigger F1, and reset terminal is through capacitance C3
Ground connection, set end ground connection, output terminal is through resistance R4 connection reset terminals, the input terminal all the way of output end of oppisite phase connection NAND gate G8;
The input terminal of the NOT gate G5 connects the output terminal of NAND gate G6 and the clear terminal of binary system serial counter C1, output terminal respectively
Connect the second input terminal of NAND gate G4;Two input terminals of the NAND gate G6 connect respectively NOT gate G7 output terminal and with it is non-
The second input terminal of door G10;The input terminal connection NAND gate G8 output terminals of the NOT gate G7;Two inputs of the NAND gate G
End connects the output end of oppisite phase of the first trigger F1 and the second trigger F2 respectively.
The 112 external host of output unit, for generate oscillating unit 108 in sensor output alarm signal
Pulse is sent to external host, and the sensor that host is alarmed according to the different identifications of the number of pulses of reception specifically includes
Triode Q1 and resistance R5.Wherein, output terminal and binary serial meter of the base stage of triode Q1 through resistance R5 connection NOT gates G1
The pulse input end of number device C1, the external host of emitter, collector connect the data input pin of the first trigger F1, second respectively
The data input pin of trigger F2 connects the common port of the anode of six diodes D1, D2, D3, D4, D5, D6 with through resistance R2.
In the present embodiment, infrared theftproof detection device operation principle is:Transformer T1, rectifier bridge VC1, voltage-stablizer V1,
Capacitance C10, capacitance C11, capacitance C12, capacitance C13 composition power supply units, DC power supply is converted into whole by external AC power
A infrared theftproof detection device circuit power supply.Power on circuitry is started to work, and sensor IC 1 exports faint low frequency signal, is passed through
The in-phase input end of operational amplifier IC3 is added to after the dc amplifier amplification that triode Q2, operational amplifier IC2 are formed, with
The voltage of the inverting input of operational amplifier IC3 compares.The voltage of the inverting input of the IC3 is true by potentiometer W1
Fixed, the appropriate resistance value for adjusting potentiometer W1 when human body, which has been not detected, in sensor IC 1 passes through, makes the in-phase input end electricity of IC3
It forces down when anti-phase input terminal voltage, operational amplifier IC3 output low levels;When sensor IC 1 has detected that human body passes through,
Make the homophase input terminal voltage of IC3 higher than anti-phase input terminal voltage, operational amplifier IC3 output high level.When sensor IC 1 is examined
When having measured human body and passing through, operational amplifier IC3 output high level exports low level, the low level after triode Q3 reverse phases
Acting on the input terminal of the basic RS filpflop of NAND gate G9, NAND gate G10 composition makes its overturning, then the high electricity of NAND gate G9 outputs
It is flat.Hereafter, when sensor IC 1 detects that the alarm signal that human body passes through disappears, the state of trigger will not change, so as to
Alarm signal is stored and is kept.Capacitance C9, resistance R14 and timer AN compositions power on clearing delay circuit, after the power is turned on, capacitance C9
In low level, ensure that rest-set flip-flop will not be triggered overturning in setting time, thus in system electrification following period of time, though
Right operating personnel do not leave scene, but not send alarm signal.Meanwhile after the power is turned on, capacitance C9 is in low level, through with it is non-
The clear terminal that door G6 adds to counter C1 makes its reset, and the input terminal of NAND gate G4 is added to through NAND gate G5, NAND gate G6, makes
Oscillator is in failure of oscillation state.When NAND gate G9 exports high level, the control door that NOT gate G1 and NAND gate G2 are formed is opened, non-
The rectangular pulse that the oscillator of the door compositions such as G3 and NAND gate G4 generates is by controlling door to be sent to counter C1 and triode Q1.
First to the 6th diode D1, D2, D3, D4, D5, D6 and resistance R2 composition diode AND gate and phase inverter P1, first to
6th single-pole double-throw switch (SPDT) K1, K2, K3, K4, K5, K6 forms number of pulses initialization circuit, and phase inverter P1 is realized to counter C1
The complementary operation of signal is exported, diode AND gate is given in first to the 6th single-pole double-throw switch (SPDT) K1, K2, K3, K4, K5, K6 decisions
Input hour counter output terminal or counter export the reversed-phase output after inverted device P1, when switch is placed in ON positions
When, it is counter output;It is counter reversed-phase output when switch is placed in OFF position.Therefore pass through the first to the 6th hilted broadsword
Commutator K1, K2, K3, K4, K5, K6 set it is different open, pipe combination, number of pulses can set between 1-63, setting
Mark of the numerical value as the sensor.The pulse that counter C1 generates oscillator counts, and different quantity, which corresponds to, to be counted
Output different device C1 and phase inverter P1, when count value reach number of pulses setup unit setting numerical value when, counter C1 and
The output of phase inverter P1 and number of pulses setup unit default first to the 6th single-pole double-throw switch (SPDT) K1, K2, K3, K4, K5, K6
Open, pipe combination it is corresponding, make diode AND gate input for high level, corresponding output is also high level.The high level signal
Control unit 111 is sent to, oscillator is made to stop oscillation and reset counter C1.First trigger F1, the second trigger F2,
Capacitance C2, capacitance C3, resistance R3, resistance R4, NOT gate G5, NAND gate G6, NOT gate G7, NAND gate G8 composition oscillating circuits, first
Trigger F1 and the second trigger F2 connects into monostable flipflop, and during stable state, their output terminal is low level, when two poles
When Guan Yumen output height allocates, rising edge signal makes the first trigger F1 enter temporary stable state, and it is high level to be jumped on output terminal,
Low level is adjusted under output end of oppisite phase, the low level signal of the output end of oppisite phase is through NAND gate G8, NOT gate G7, NAND gate G6 reverse phases
After add to counter C1 clear terminals and make its clearing, while adding to NAND gate G4 after NOT gate G5 reverse phases again makes oscillator stop work
Make.After the temporary stable state of first trigger F1, low level is adjusted under output terminal, it is high level to export jump on end of oppisite phase, is touched
The second trigger F2 overturnings are sent out, into temporary stable state, the second trigger F2 output terminals output low level makes counter C1 still in clear
Nought state, oscillator is still in stop working state.First trigger F1 and the second trigger F2 are used in combination, and reduce timing
The capacity of component capacitance C2 and capacitance C3 avoid the electrolytic capacitor being easily varied using capacity, ensure the stabilization of delay time.
After the temporary stable state of second trigger F2, oscillator is resumed work, and the above-mentioned course of work will repeat, and can generate setting quantity
Pulse, so move in circles, delay at regular intervals is issued by the pulse of setting quantity, until host press reset or
It is re-powered after down circuitry.Triode Q1 and resistance R5 composition output units will control door output, oscillator generation set
The emitter through triode Q1 is sent to host after the pulse signal amplification of fixed number amount.When multiple infrared theftproof detection device groups
During into antitheft detection system, the emitter of the triode Q1 of each infrared theftproof detection device output unit is all connected to public
Signal transmssion line on, during no alarm signal, each triode Q1 is turned off, and each infrared theftproof detection device is mutually only
It stands, interfere with each other;When some infrared theftproof detection device has detected that human body passes through, triode Q1 will control door to export
, oscillator generate setting quantity pulse signal amplify after be sent to host.If there are multiple infrared theftproof detection devices
Human body process is detected, host by the difference according to the duration impulse quantity received, prevent by the infrared ray that differentiation sends alarm
The position of detection device is stolen, so as to be positioned to invasion.
It should be noted that in above-described embodiment, the preferred models 7809 of voltage-stablizer V1, the counter C1 is preferred
Model CD4040, the preferred model CD4069 of phase inverter P1, the first trigger F1 and the second trigger F2 is preferred
Model CD4013.
It should be noted that in above-described embodiment, the power supply 101, sensing unit 102, relatively amplifying unit 103, list
Member 104, rp unit 105, storage unit 106, control gate cell 107, oscillating unit 108, counting unit 109, number of pulses
The circuit of setup unit 110, control unit 111 and output unit 112 is preferred circuit structure, other can realize identical
The circuit structure of function can do equivalent substitution.
When technical scheme has detected that human body passes through by sensing unit, sensor signal through amplifying unit,
Comparing unit, rp unit, storage unit are amplified, are exported compared with a reference value, after the holding of reverse phase and signal, control door list
Member conducting, the pulse that oscillating unit generates is by controlling gate cell to be sent to output unit and counting unit, and counting unit is to arteries and veins
Quantity is rushed to be counted, when generating the quantity of vibration in each cycle that count value reaches the setting of number of pulses setup unit,
Control unit control oscillating unit stops oscillation, and counting unit is resetted, and the external host of output unit is each by oscillating unit
The pulse that cycle generates is sent to host, and host detects the sensor of human body process according to the number of pulses differentiation received
Position, send alarm, and be locked into invasion and put.The infrared theftproof detection device can be promptly and accurately detection invasion simultaneously
Positioning invasion position, has the characteristics that high sensitivity, stable and reliable in work, meanwhile, it is applied to antitheft detection system, it can
It realizes and host to is sent the alarm signal of all detectors in system by a public signal wire, enormously simplify circuit
Structure reduces installation, the workload safeguarded.
Note that it above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various apparent variations,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
It can include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (6)
1. a kind of infrared theftproof detection device, it is characterised in that including:Power supply, sensing unit, amplifying unit, comparing unit,
Rp unit, storage unit, control gate cell, oscillating unit, counting unit, number of pulses setup unit, control unit and defeated
Go out unit;
The power supply is used to power to entire infrared theftproof detection device;
The sensing unit is electrically connected with amplifying unit, for detecting whether there is human body process, and sensor signal is output to
Amplifying unit;
The amplifying unit is electrically connected with comparing unit, for being output to comparing unit after being amplified to sensor signal;
The comparing unit is electrically connected with rp unit, for comparing sensor signal voltage numerical value and reference voltage numerical value, root
Alarm signal is sent according to comparative result, and comparative result is output to rp unit;
The rp unit is electrically connected with storage unit, for making storage unit reverse phase;
The storage unit is electrically connected with control gate cell, for keeping the alarm signal that sensor exports, and it is defeated in sensor
Triggering control gate cell conducting when going out alarm signal;
The control gate cell is electrically connected with oscillating unit, counting unit, output unit, in sensor output alarm signal
When by oscillating unit generate oscillator signal be sent to counting unit and output unit;
The oscillating unit is electrically connected with control unit, and for generating oscillator signal, specifically includes NOT gate G3, NAND gate G4, electricity
Hold C1 and resistance R1, the NOT gate G3 input terminals connect NAND gate G4 output terminals, the NOT gate G3 output terminals connection control door list
Member;The first input end of the NAND gate G4 connects control unit, the second input terminal through resistance R1 connection NOT gate G3 input terminals, institute
Capacitance C1 is stated to be parallel between the second input terminal of NOT gate G3 output terminals and NAND gate G4;
The counting unit is electrically connected with number of pulses setup unit, is counted for the number of pulses to oscillator signal;
The number of pulses setup unit is electrically connected with control unit, each all for setting the oscillator signal of oscillating unit generation
Number of pulses in phase, so as to set respective markers for infrared theftproof detection device;
Described control unit is electrically connected with oscillating unit, and the number of pulses for working as oscillating unit generation reaches number of pulses setting
During the numerical value of unit setting, control oscillating unit stops oscillation, and counting unit is resetted;
The external host of output unit, for being sent to the pulse that oscillating unit generates in sensor output alarm signal
External host, the sensor that host is alarmed according to the different identifications of the number of pulses of reception;The amplifying unit includes three
Pole pipe Q2 and operational amplifier IC2, the triode Q2 base stages connect sensing unit, emitter ground connection, collector connection power supply
Anode;The power pins connection power supply of the operational amplifier IC2, the collector of in-phase input end connecting triode Q2, reverse phase
Input end grounding, output terminal connection comparing unit;The comparing unit includes operational amplifier IC3 and potentiometer, the computing
The activity of amplifier IC3 power pins connection power supply, in-phase input end connection amplifying unit, inverting input connection potentiometer
Foot, output terminal connection rp unit;Two fixed feets connection power supply of the potentiometer.
2. infrared theftproof detection device according to claim 1, which is characterized in that the control gate cell includes NOT gate
G1 and NAND gate G2, the NOT gate G1 input terminals connect NAND gate G2 output terminals, the NOT gate G1 output terminals connection count unit
And output unit;Two input terminals of the NAND gate G2 connect storage unit and oscillating unit respectively.
3. infrared theftproof detection device according to claim 1, which is characterized in that the counting unit includes binary system
Serial counter, the binary system serial counter pulse input end connection control gate cell, clear terminal connection control unit, arteries and veins
Rush output terminal connection number of pulses setup unit.
4. infrared theftproof detection device according to claim 1, which is characterized in that the number of pulses setup unit bag
Include phase inverter, single-pole double-throw switch (SPDT), diode and resistance R2, the phase inverter pulse input end connection count unit, phase inverter
It connects respectively per road pulse output end and one end of resistance R2, the electricity is connected in parallel to after a single-pole double-throw switch (SPDT) and a diode
Hinder the other end connection output unit and control unit of R2;Wherein, per road in output, the single-pole double-throw switch (SPDT) moves phase inverter
The cathode of end connection diode, two non-moving ends connect the pulse input end and pulse output end of phase inverter respectively.
5. infrared theftproof detection device according to claim 1, which is characterized in that described control unit includes first and touches
Device, the second trigger, capacitance C2, capacitance C3, resistance R3, resistance R4, NOT gate G5, NAND gate G6, NOT gate G7, NAND gate G8 are sent out,
The first flip-flop data input terminal connects output unit, input end of clock connection number of pulses setup unit, reset terminal warp
Capacitance C2 is grounded, set end ground connection, and output terminal connects the clock of the second trigger through resistance R3 connection reset terminals, output end of oppisite phase
Input terminal;The second flip-flop data input terminal connects output unit, and the output that input end of clock connects the first trigger is anti-
Xiang Duan, reset terminal are grounded through capacitance C3, set end ground connection, output terminal through resistance R4 connection reset terminals, the connection of output end of oppisite phase and
The input terminal all the way of NOT gate G8;The NOT gate G5 input terminals connect NAND gate G6 output terminals and counting unit respectively, and output terminal connects
Connect oscillating unit;Two input terminals of the NAND gate G6 connect NOT gate G7 output terminals and storage unit respectively;The NOT gate G7
Input terminal connection NAND gate G8 output terminals;Two input terminals of the NAND gate G8 connect the first trigger and second and touch respectively
Send out the output end of oppisite phase of device.
6. infrared theftproof detection device according to claim 1, which is characterized in that the output unit includes triode
The base stage of Q1 and resistance R5, the triode Q1 control gate cell and counting unit through resistance R5 connections, the external host of emitter,
Collector connects number of pulses setup unit and control unit.
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CN201610167155.3A CN105809865B (en) | 2016-03-23 | 2016-03-23 | A kind of infrared theftproof detection device |
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US4768020A (en) * | 1985-12-24 | 1988-08-30 | Paul E. Yarbrough, Jr. | Hot body intrusion activated light control unit with daylight photocell deactivation override |
CN87100371A (en) * | 1986-01-20 | 1987-07-29 | 洛迦诺电子工业股份有限公司 | Light barrier |
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