CN105808796A - PIN diode reconfigurable antenna performance evaluation method under action of high power electromagnetic pulse - Google Patents

PIN diode reconfigurable antenna performance evaluation method under action of high power electromagnetic pulse Download PDF

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CN105808796A
CN105808796A CN201410838013.6A CN201410838013A CN105808796A CN 105808796 A CN105808796 A CN 105808796A CN 201410838013 A CN201410838013 A CN 201410838013A CN 105808796 A CN105808796 A CN 105808796A
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CN105808796B (en
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陈如山
丁大志
樊振宏
陈士涛
陆凡
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Nanjing University of Science and Technology
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Abstract

The invention discloses a PIN diode reconfigurable antenna performance evaluation method under the action of a high power electromagnetic pulse. A time domain integration method based on marching-on in-time (MOT) is employed to analyze the performance of a reconfigurable antenna loaded with a PIN diode under the action of the high power electromagnetic pulse, a semiconductor physical model analyzed based on a time domain spectral element method is employed to describe the physical properties of the PIN diode, through solving a drift-diffusion equation set, the charge carrier distribution and potential distribution in the PIN diode are obtained. According to the invention, the drift-diffusion equation of the PIN diode is merged into a time domain integration equation based on MOT to form a strict and synchronous field-circuit coupling solution algorithm, a Newton's iteration method is employed in the solving process, and the analysis and calculation on the coupling between the PIN diode and the antenna are more consistent and effective.

Description

PIN pipe reconfigurable antenna performance estimating method under high-power electromagnetic impulse action
Technical field
The present invention relates to electromagnetic simulation technique field, particularly a kind of under high-power electromagnetic impulse action, PIN pipe reconfigurable antenna performance is estimated the method for analysis.
Background technology
Fast development along with modern Large Copacity, multi-functional, ultra broadband integrated information system so that the information subsystem quantity carried in identical platform increases.As the antenna of the inevitable passage that information in wireless system comes in and goes out, its quantity also correspondingly increases.From the viewpoint of reduce integrated information system holistic cost, alleviate weight, reduce system RCS, realize good electromagnetic compatibility characteristic etc., this phenomenon is very harmful, also becomes one big " bottleneck " that restriction integrated information system develops to Large Copacity, multi-functional, ultra broadband direction and applies further.In order to overcome these difficulties, making the characteristic of whole information system be subject to the restriction of the inevitable passage antenna of information discrepancy as few as possible, the concept of " reconfigurable antenna " is suggested and obtains development.The research of reconfigurable antenna is intended to enable the antenna to according to actual environment needs, Real-time Reconstruction antenna performance.Reconfigurable antenna design is that a kind of extremely complex electromagnetic problem PIN diode perhaps can help engineers design to go out needs both meeting integrated multiband simultaneously constantly to reduce mobile phone volume and increasing being maintained with inexpensively of new capability.PIN diode can change reactance value or the equivalent electric length of antenna as permutator, thus changing operating frequency of antenna.Due to the appearance of microwave switch, reconfigurable multiband antenna receives more and more attention recently
The advantages such as controlled power is big because PIN diode has, bear power height, stability and reliability is high, constitute circuit as switch flexibly, the good linearity that switchs, are widely used in the control circuit such as on-off circuit, manipulator at present.Developing rapidly however as modern science and technology, becoming stronger day by day of electronic functionalities, the encountered electromagnetic environment of electronic system normal operation is also much more complex than ever.In the control circuit of the electronic equipments such as PIN diode communicates because its good characteristic is widely used in function, radar, these control circuits more or less will must be subject to the impact of extremely strong transient electromagnetic pulse, and these transient electromagnetic pulses derive from the phenomenons such as static discharge, spike electromagnetic pulse, industrial spark.Additionally, the rise time of the strong electromagnetic pulses such as High-Power Microwave (HPM), nuclear electromagnetic pulse is short, peak electric field is strong, and sphere of action is wide, and the threat therefore electronic equipment and system constituted is even more serious.For the assessment of PIN pipe reconfigurable antenna performance under high-power electromagnetic impulse action, mainly analytical calculation PIN diode working condition under transient electromagnetic pulse effect, thus simulating the performance change analyzing antenna further.
Summary of the invention
It is an object of the invention to provide the appraisal procedure of PIN pipe reconfigurable antenna performance under a kind of high-power electromagnetic impulse action, consider that the equation of PIN pipe actual physical process under high-power electromagnetic impulse action describes and adopts the stringent synchronization computational methods of field circuit method method simultaneously.
The technical solution realizing the object of the invention is: the appraisal procedure of PIN pipe reconfigurable antenna performance under a kind of high-power electromagnetic impulse action, and step is expressed as follows:
The first step, sets up the solving model of PIN pipe reconfigurable antenna, and antenna structure adopts triangle pair model to carry out subdivision, obtains the structural information of model, i.e. the unit information of each triangle;
Second step, from Maxwell equation equation group, it is determined that the Time domain electric field integral equation of target conductor;
3rd step, adopts RWG basic function spatially and temporal triangle time basic function, the surface induction electric current in the Time domain electric field integral equation of second step is launched, obtains surface induction electric current expanded expression;
4th step, the surface induction electric current expanded expression of the 3rd step is substituted in the Time domain electric field integral equation of second step, then the Time domain electric field integral equation of discrete form is adopted respectively in time some test, spatially adopts Galerkin test, obtain system impedance matrix equation;
5th step, from Drift-diffusion Semiconductor Equations group, launches the carrier concentration of required solution and electromotive force on each node, equation adopts Galerkin method test, utilizes Newton iteration method to solve the carrier and Potential Distributing obtaining each node;
6th step, the physical equation of the PIN pipe that the system impedance matrix equation obtained according to the 4th step and the 5th step obtain, the field circuit method matrix equation of stringent synchronization can be set up by the thought of field circuit method, then pass through Newton iteration to solve, the method can encourage and field excitation on simultaneously powered up road, so it may be used for the change of PIN pipe internal current under high power effect, the temporal current distribution of the antenna conductor target surface that the change of PIN tube current brings can be obtained simultaneously, obtain the electromagnetic property parameters of target according to temporal current distribution, complete simulation process;
The present invention compared with prior art, its remarkable advantage: the time domain surface integral equations that (1) adopts only need to carry out subdivision grid and just can emulate and obtain wide-band-message in metal surface, and this reduces a lot of unknown number relative to the algorithm of body subdivision.(2) physical characteristic of PIN pipe is from Drift-diffusion Semiconductor Equations group, the carrier concentration of required solution and electromotive force are launched on each node, equation is adopted Galerkin method test, Newton iteration method is utilized to solve the carrier and Potential Distributing obtaining each node, more can accurately analyze the physical process of PIN pipe compared to equivalent-circuit model, electric heating integrated analysis can be carried out further simultaneously.(3) the physical model equation of PIN pipe is merged into based on the field circuit method method for solving forming a stringent synchronization in the temporal basis functions of MOT, solution procedure adopts the Newton iteration method of standard, so makes PIN pipe and the analysis coupled between antenna uniform validity more.
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is the target conductor loading physical model PIN pipe.
Fig. 2 is triangle RWG basic function schematic diagram.
Fig. 3 is triangle time basic function schematic diagram.
Fig. 4 is that quasiconductor adds lump external circuit simulation result.
Fig. 5 is that the present invention calculates and obtains simulation result under high-power electromagnetic impulse action.
Detailed description of the invention
One, the simple introduction of time-domain integration method
Considering under the irradiation of incident electromagnetic wave, the surface of metallic cylinders can produce faradic current, thus produces scattered field.According to the tangential continuous print boundary condition in metal surface, it is possible to set up temporal basis functions (TDIE), as follows:
n ^ ( r o ) × [ E inc ( r o , t ) + E sca ( r o , t ) ] = 0
Wherein Einc(r0, it is t) at point of observation r0The incident electric fields at place, Esca(r0, it is t) at point of observation r0The scattering electric field that place produces,It is that metal surface S is at r0The outer normal vector of the unit at place, J is faradic current.After bringing the expression formula of scattering electric field into above formula, it is possible to obtain:
n ^ ( r o ) × [ μ 0 4 π ∫ ∫ S d s s ∂ τ J ( r s , τ ) R - ▿ o 4 π ϵ 0 ∫ ∫ S d s s ∂ τ - 1 ▿ s · J ( r s , τ ) R ] = n ^ ( r o ) × E inc ( r o , t )
Wherein μ0And ε0Representing pcrmeability and the dielectric constant of free space respectively, c is the light velocity in free space, R=| r0-rs| it is point of observation r0With source point rsBetween distance, τ represents t-R/c,RepresentRepresent
Use the electric current distribution on definition RWG space basis functions model triangle pair on triangle pair:
Λ n ± ( r ) = l n 2 A n ρ n ± , r ∈ T n ± 0 , r ∉ T n ±
Wherein lnAnd AnIt is length and the triangle of the common edge of nth bar triangle pair respectivelyArea.It is with triangleFree summit (that summit referred to not in the common edge of triangle pair) be initial vector.
The faradic current J use RWG space basis functions model of metal surface is:
J ( r , t ) ≅ Σ n = 1 N s J n ( t ) Λ n ( r )
NsIt is the number of the RWG basic function that scattering object comprises, JnT () is unknown current coefficient to be asked, it is necessary to launch with time basic function.
In TDIE, time basic function can select triangle time basic function:
After time basic function substitution formula, obtain:
J ( r s , t ) ≅ Σ n = 1 N s Σ l = 1 N t I n l Λ n ( r s ) T l ( t )
Wherein NtIt is the number of time basic function,It it is the coefficient of time basic function on the l time step on the n-th RWG basic function.After above formula is substituted into Time domain electric field integral equation:
n ^ ( r o ) × { μ 0 4 π ∫ ∫ S n d s s Σ n = 1 N s Σ l = 1 N t I n l Λ n ( r s ) ∂ τ T l ( τ ) R - ▿ o 4 π ϵ 0 ∫ ∫ S n d s s Σ n = 1 N s Σ l = 1 N t I n l [ ▿ s · Λ n ( r s ) ] ∂ τ - 1 T l ( τ ) R } = n ^ ( r o ) × E inc ( r o , t )
Wherein,Represent and carry out Line Integral on the triangle pair at the n-th RWG basic function place, source.Such current density, J just passes through NsIndividual RWG space basic function and NtIndividual time basic function respectively spatially and temporally on carry out discrete.
Above formula is carried out Galerkin test spatially, uses NsAbove formula is done inner product by individual RWG space basic function successively, so can obtain NsIndividual equation group, writes out m-th equation as follows:
∫ ∫ S m d s o Λ m ( r o ) · { n ^ ( r o ) × { μ 0 4 π ∫ ∫ S n d s s Σ n = 1 N s Σ l = 1 N t I n l Λ n ( r s ) ∂ τ T l ( τ ) R - ▿ o 4 π ϵ 0 ∫ ∫ S n d s s Σ n = 1 N s Σ l = 1 N t I n l [ ▿ s · Λ n ( r s ) ] ∂ τ - 1 T l ( τ ) R } } = ∫ ∫ S m d s o Λ m ( r o ) · [ n ^ ( r o ) × E inc ( r o , t ) ]
Wherein,Represent and carry out Line Integral on the triangle pair that m-th observes RWG basic function place.Above formula is done temporal Point matching, obtains the equation on moment t=i Δ t:
∫ ∫ S m d s o Λ m ( r o ) · { n ^ ( r o ) × { μ 0 4 π ∫ ∫ S n d s s Σ n = 1 N s Σ l = 1 N t I n l Λ n ( r s ) ∂ τ T l ( iΔt - R / c ) R - ▿ o 4 π ϵ 0 ∫ ∫ S n d s s Σ n = 1 N s Σ l = 1 N t I n l [ ▿ s · Λ n ( r s ) ] ∂ τ - 1 T l ( iΔt - R / c ) R } } = ∫ ∫ S m d s o Λ m ( r o ) · [ n ^ ( r o ) × E inc ( r o , iΔt ) ]
By the N of above formulasIndividual equation is rewritten into matrix form equation:
Z ‾ E 0 I i = V E i - Σ j = 1 i - 1 Z ‾ E i - j I j
Wherein
[ Z ‾ E i - j ] mn = μ 0 4 π ∫ ∫ S m d s o Λ m ( r o ) · ∫ ∫ S n d s s Λ n ( r s ) ∂ τ T j ( iΔt - R / c ) R + 1 4 π ϵ 0 ∫ ∫ S m d s o ▿ o · Λ m ( r o ) ∫ ∫ S n d s s ▿ s · Λ s ( r s ) ∂ τ - 1 T j ( iΔt - R / c ) R [ V E i ] m = ∫ ∫ S m d s o Λ m ( r o ) · E inc ( r o , iΔt )
Wherein R=ro-rs,It is the coefficient to be asked of i-th time step,It is sparse impedance matrix, i, j=1,2,3..., i >=j, i-j represents time delay for (i-j) Δ t.ViRepresent the excitation at i-th time step.Above-mentioned equation is exactly temporal basis functions (TDIE):
Z ‾ 0 I i EM = V i EM - Σ j = 1 i - 1 Z ‾ i - j I j EM
Wherein, above formula matrix equation only need to each moment i Δ t (i=1,2 ..., Nt) carry out solving Ii, so each time step solves a matrix equation, it is possible to obtain the I on each moment i Δ ti, it is called time stepping scheme (MOT).
One, PIN pipe physical model solves
According to carrier drift-diffusion theory, Poisson's equation, equation of current density, Current continuity equation are the one group of fundamental formulars characterizing semiconductor device inside electric parameter.Different microwave semiconductor devices can use different mobility models and generation-recombination rate model, and even same device is for the incoming signal of varying strength, it is also desirable to use different models, and model is revised.Therefore, it is achieved the transient analysis of semiconductor device electrical characteristics is a considerably complicated process.Drift domination is mainly made up of following three prescription journeys:
Poisson's equation:
In Poisson's equation,Being electromotive force, q is unit charge electricity, and n is electron concentration, and p is hole concentration,It is net dopant concentration,WithRespectively donor impurity concentration and acceptor impurity concentration.
Equation of current density:
Current continuity equation:
∂ n ∂ t = 1 q ▿ · J n + G - R ∂ p ∂ t = 1 q ▿ · J p + G - R - - - ( 2.3 )
G represents generation rate and the recombination rate in electronics and hole respectively with R.
In the multidimensional simulation of semiconductor device, boundary condition is generally all more complicated, is often divided into fixed boundary condition and floating boundary condition two class.Fixed boundary condition refers generally to border, metal electrode place, and floating border refers to the border not having metal electrode.
Fixed boundary condition:
Wherein VAIt is the voltage being added in Ohmic contact place, φn、φpIt it is the Fermi potential in electronics, hole.
Floating boundary condition:
R is the outer normal component of boundary.
In the process carrying out Semiconductor Physics numerical solution, first having to drift-diffusion equation is normalized, equation is carried out the gold test of gal the Liao Dynasty by recycling spectral element method basic function, by the equations turned matrix form that can solve for computer.Adopt coupling algorithm and Newton iteration method to solve above-mentioned Nonlinear System of Equations, try to achieve n, p,After, electric current density can be tried to achieve
J = J n + J p + ϵ ∂ E ∂ t - - - ( 2.6 )
Two, the basic theories of the field circuit method that PIN pipe reconfigurable antenna is analyzed
The RWG triangle edges k of PIN pipe will be loaded1It is used as the voltage source limit of equivalence, and by the voltage V on source1It is considered as the feed voltage of the voltage source of equivalence.Additionally, flow through the electric current i of PIN pipesEqual to flowing vertically through this loading limit k1Electric current.Due to kth1The current coefficient on bar limitWhat represent is the electric current density (A/m) flowing vertically through this limit, and the electric current therefore flowing through this limit is multiplied by the length of side equal to current coefficientNamelyThe mixing field road equation that just can write out:
Z 0 I j EM + CKT + l k 1 V j CKT 1 + l k 2 V j CKT 2 = V j EM + CKT - Σ i = 1 j - 1 Z j - i I i EM + CKT - - - ( 3.1 )
Seven physical equations in conjunction with second step obtain the following matrix equation coupled:
Z 0 I j EM + CKT + a U j CKT = b j EM + CKT - Σ i = 1 j - 1 Z j - i I i EM + CKT I j CKT = f ( U j CKT ) - - - ( 3.2 )
Can obtain: Z 0 a 0 Em 1 CKT 0 I j EM + CKT U j CKT + 0 - f ( U j CKT ) = b j EM + CKT - Σ i = 1 j - 1 Z j - i I i EM + CKT 0 - - - ( 3.3 )
Equation (3) solved employing Newton iteration method
F ( x ) = Z 0 a 0 Em 1 CKT 0 I j EM + CKT U j CKT + 0 - f ( U j CKT ) - b j EM + CKT - Σ i = 1 j - 1 Z j - i I i EM + CKT 0
F ' ( x ) = Z 0 a 0 EM 1 CKT - ∂ f ( U j CKT ) ∂ U j CKT = Z 0 a 0 EM 1 CKT - I j - I * U j - U *
Finally solve:
x j k + 1 = x j k - [ F ' ( x j k ) ] - 1 · F ( x j k ) , x j k + 1 = I j EM + CKT U j CKT T - - - ( 3.4 )
Wherein, Uj, IjFor the electric field of a upper iteration step, current value.U*=Uj-Δ U, Δ U is set to 0.01V in advance, I=f (U) try to achieve electric current I*.Then, (3.4) tentative voltage U is tried to achievej+1With electric current Ij+1.Such iteration, until | xj+1-xj| < ε stops.Update Uj=Uj+1,Ij=Ij+1
The field road that nonlinear Equivalent circuit equations is merged into based on forming a mixing in the temporal basis functions of MOT by the present invention solves, and so makes the Mutual Coupling Analysis between antenna and PIN pipe calculate uniform validity more.Physical model relative to equivalence analytical model analyze practical structures characteristic time more meet actual physical process, computational analysis is more accurate.But the analysis of physical model also can consume the more time, expending and calculate resource, this is also area for improvement from now on.Owing to the simulation of actual physical process is more complicated, also seldom there is relevant report to introduce the process of Coupled field and circuit analysis physical model at present, time-domain integration method more has no report.This is also the innovation of the present invention.

Claims (3)

1. PIN pipe reconfigurable antenna performance estimating method under a high-power electromagnetic impulse action, it is characterised in that step is as follows:
The first step, sets up the solving model of PIN pipe reconfigurable antenna, and antenna structure adopts triangle pair model to carry out subdivision, obtains the structural information of model, i.e. the unit information of each triangle;
Second step, from Maxwell equation equation group, it is determined that the Time domain electric field integral equation of target conductor;
3rd step, adopts RWG basic function spatially and temporal triangle time basic function, the surface induction electric current in the Time domain electric field integral equation of second step is launched, obtains surface induction electric current expanded expression;
4th step, the surface induction electric current expanded expression of the 3rd step is substituted in the Time domain electric field integral equation of second step, then the Time domain electric field integral equation of discrete form is adopted respectively in time some test, spatially adopts Galerkin test, obtain system impedance matrix equation;
5th step, from Drift-diffusion Semiconductor Equations group, the carrier concentration of required solution and electromotive force are launched on each node, Drift-diffusion Semiconductor Equations is adopted Galerkin method test, utilize Newton iteration method to solve the carrier and Potential Distributing obtaining each node, finally solve the physical characteristic of PIN pipe;
6th step, the physical characteristic of the PIN pipe that the system impedance matrix equation obtained according to the 4th step and the 5th step obtain, the field circuit method matrix equation of stringent synchronization is set up by the thought of field circuit method, then pass through Newton iteration to solve, obtain the temporal current distribution of the antenna conductor target surface that the change of PIN tube current brings, obtain the electromagnetic property parameters of target according to temporal current distribution, complete simulation process.
2. PIN pipe reconfigurable antenna performance estimating method under high-power electromagnetic impulse action according to claim 1, it is characterised in that: the 4th step specifically processes as follows:
The RWG triangle edges k of PIN pipe will be loaded1It is used as the voltage source limit of equivalence, and by the voltage V on source1It is considered as the feed voltage of the voltage source of equivalence, additionally, flow through the electric current i of PIN pipesEqual to flowing vertically through this loading limit k1Electric current, due to kth1The current coefficient on bar limitWhat represent is the electric current density flowing vertically through this limit, and the electric current therefore flowing through this limit is multiplied by the length of side equal to current coefficientNamelyObtain mixing field road equation:
Z 0 I j EM + CKT + l k 1 V j CKT 1 + l k 2 V j CKT 2 = V j EM + CKT - &Sigma; i = 1 j - 1 Z j - i I i EM + CKT - - - ( 1 )
Wherein,Represent field excitation source value and circuit activation source value,WithRepresent the node voltage vector in the current coefficient vector circuit of the RWG basic function under jth Δ t, matrix Z respectively0And Zj-iRepresent the mutual coupling between electromagnetic structure current time and last time RWG basic function respectively.
3. PIN pipe reconfigurable antenna performance estimating method under high-power electromagnetic impulse action according to claim 1, it is characterised in that: the 6th step is set up the field circuit method matrix equation of stringent synchronization, then passes through Newton iteration and solve, specifically comprise the following steps that
1) providing a coupled wave equation that can simultaneously solve time-domain integration method and PIN pipe physical process, matrix form equation is as follows:
Z 0 Z CE Z EC Y I j EM + CKT V j CKT + 0 I j CKT , nl ( V j CKT ) = V j EM + CKT - &Sigma; i = 1 j - 1 Z j - 1 I i EM + CKT I j CKT - - - ( 2 )
Wherein,Represent field excitation source value,It is the vector being made up of circuit unknown quantitys such as the electric currents on node voltage and voltage source branch road,In comprise the unknown quantity impact on current time in the value of the voltage source in indication circuit or current source and historical juncture circuit,It is nonlinear change unknown quantity Z in circuitCEAnd ZECBeing sparse matrix, they produce with electromagnetic structure seam voltage-current relationship at circuit, matrix ZCEThe impact on electromagnetic structure of the indication circuit structure, comprises the coupled voltages information of circuit port;Matrix ZECRepresent the electromagnetic structure impact on circuit structure, comprise the couple current information of circuit port;Matrix Y represents the electric circuit element of linear time invariant, is one and is sized to NCKT×NCKTSparse admittance matrix, only comprise O (NCKT) individual nonzero element;
2) equation (2) solved employing Newton iteration method
F ( x ) = Z 0 Z CE Z EC Y I j EM + CKT V j CKT + 0 I j CKT , nl ( V j CKT ) - V j EM + CKT - &Sigma; i = 1 j - 1 Z j - i I i EM + CKT I j CKT , x = I j EM + CKT V j CKT ,
First solve Jacobian matrix
[ JA ] = &PartialD; F ( x ) &PartialD; x = Z 0 Z CE Z EC Y + J l , p nl , J l , p nl = &PartialD; I j CKT , nl ( V j CKT ) &PartialD; I j EM &PartialD; I j CKT , nl ( V j CKT ) &PartialD; V j CKT
Finally solve xn+1=xn-[JA]-1F (x), after Newton iteration meets precision, it is possible to obtain the change of voltage x current in the surface equivalent current of each time step antenna and PIN pipe circuit.
CN201410838013.6A 2014-12-29 2014-12-29 PIN pipe reconfigurable antenna performance estimating method under high-power electromagnetic impulse action Active CN105808796B (en)

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