CN105789281B - Mix polar GaN device - Google Patents
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- CN105789281B CN105789281B CN201610152348.1A CN201610152348A CN105789281B CN 105789281 B CN105789281 B CN 105789281B CN 201610152348 A CN201610152348 A CN 201610152348A CN 105789281 B CN105789281 B CN 105789281B
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- 239000000758 substrate Substances 0.000 claims abstract description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 23
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000005669 field effect Effects 0.000 abstract description 3
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 239000010953 base metal Substances 0.000 description 11
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000007926 Craterellus fallax Nutrition 0.000 description 1
- 240000007175 Datura inoxia Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000238 buergerite Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
Abstract
The invention discloses a kind of polar GaN device of mixing, the GaN device is related to the field effect transistor technical field with two-dimentional carrier gas channel.The GaN device includes substrate layer, N-polar GaN buffer layer, Al component from bottom to topxIncrementally the first N-polar Al of gradual change x GaN layer, Al componentxKeep the 2nd N-polar Al of constant x GaN layer, Al componentx3rd N-polar Al of degression type gradual change x GaN layer and Ga-polar GaN channel layer.With the higher GaN base material of epitaxial growth quality and 2DEG surface density and mobility in channel can be increased by the structure, while can prepare the device with smaller ohmic contact resistance on the mixing polar material using traditional Ga-polar GaN base device preparation technology.
Description
Technical field
The present invention relates to field effect transistor technical fields more particularly to a kind of mixing with two-dimentional carrier gas channel
Polar GaN device.
Background technique
GaN base material is in application fields such as microelectronics, photoelectrons with broad stopband, high breakdown electric field, the drift of high saturated electrons
The material characteristics such as speed are paid close attention to by researcher, become forward position and the hot spot of the research of current global semiconductor, with the materials one such as SiC
It rises and is known as most promising " third generation semiconductor material ".
Since the GaN of wurtzite structure lacks center inverting, extremely strong spontaneous polarization phenomenon is caused, therefore for buergerite
There are the GaN of gallium polarity (Ga-polar) and nitrogen polarity (N-polar) two kinds of polarization directions by the GaN of structure.Due to two kinds of materials
There is also many differences on the contrary, causing the GaN material of two kinds of opposed polarities for polarity, if N-polar GaN is compared with Ga-polar GaN
It is easier to be corroded by alkaline solution, while its chemical mobility of the surface is stronger, surface state more horn of plenty, and as material epitaxy grows skill
The development of art, the preparation of N-polar GaN material also become more to be easy.This is all that the extensive use of N-polar GaN material is established
Basis is determined.
AlGaN is in upper, GaN in the hetero-junctions of traditional Ga-polar GaN base high electron mobility transistor (HEMT)
Under, Ti/Al Base Metal is deposited directly on AlGaN, and AlGaN forbidden bandwidth is wider compared with GaN, to cause Ohmic contact electric
It hinders larger, affects device performance.In N-polar GaN base HEMT, in order to mutually simultaneous with Ga-polar GaN base device technology
Hold, generally also using Ti/Al Base Metal system as metal ohmic contact, by N-polar GaN and AlGaN constituted it is different
GaN is above AlGaN in matter knot, and such Ti/Al base metal ohmic contact can be deposited directly on N-polar GaN, and GaN
Forbidden bandwidth is narrow compared with AlGaN, so as to realize smaller ohmic contact resistance.But research is found in N-polar GaN base
The Ti/Al base metal ohmic contact being deposited directly on N-polar GaN in HEMT can not achieve smaller after high annealing
Ohmic contact resistance, the reason is that the Al metal in Ti/Al Base Metal can be penetrated after high annealing Ti metal layer entrance
AlN is formed in GaN and in conjunction with N.
The AlN and GaN will form the AlN/GaN hetero-junctions similar to AlGaN/GaN hetero-junctions in Ga-polar GaN,
To form two-dimensional electron gas (2DEG) in the GaN of the interface AlN and GaN, but the AlN and N-polar in N-polar GaN
2DEG will not be generated in the hetero-junctions that GaN is constituted, will form two-dimensional hole gas (2DHG) on the contrary, the reason is that its polarity and Ga-
Polar GaN has differed 180 °.And the presence of the 2DHG will certainly make ohmic contact characteristic be deteriorated, to cause in N-polar
It still cannot achieve smaller ohmic contact resistance in GaN base HEMT.Smaller ohmic contact resistance in order to obtain, some document reports
It is regenerated in road using ohm to reduce ohmic contact resistance, but this method can improve technology difficulty, increase device preparation time simultaneously
Increase the uncertainty of technique.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of polar GaN device of mixing, by the structure can other than
Prolong the higher GaN base material of growth quality and increase 2DEG surface density and mobility in channel, while traditional Ga- can be used
Polar GaN base device preparation technology prepares the device with smaller ohmic contact resistance on the mixing polar material.
In order to solve the above technical problems, the technical solution used in the present invention is: a kind of polar GaN crystalline substance device of mixing,
It is characterized by: from bottom to top including substrate layer, N-polar GaN buffer layer, Al componentxIncrementally the first N- of gradual change
polar Al x GaN layer, Al componentxKeep the 2nd N-polar Al of constant x GaN layer, Al componentx3rd N- of degression type gradual change
polar Al x GaN layer and Ga-polar GaN channel layer；Wherein the first N-polar Al x Al component in GaN layerx
Maximum, the 2nd N-polar Al are incremented to from minimum x Al component in GaN layerxKeep the first N-polar Al x In GaN layer
Al componentxMaximum it is constant, the 3rd N-polar Al x Al component in GaN layerxFrom the first N-polar Al x Al in GaN layer
ComponentxMaximum start to be decremented to minimum, wherein the 3rd N-polar Al x Al component in GaN layerxMinimum be greater than the
One N-polar Al x Al component in GaN layerxMinimum, 0≤x≦1。
A further technical solution lies in: the 3rd N-polar Al x Between GaN layer and Ga-polar GaN channel layer
Equipped with N-polar AlN insert layer.
A further technical solution lies in: the growth thickness of the N-polar AlN insert layer is between 1nm-2nm.
A further technical solution lies in: the substrate layer is Sapphire Substrate, silicon carbide substrates or silicon substrate.
A further technical solution lies in: the first N-polar Al x GaN layer, the 2nd N-polar Al x GaN layer and third
N-polar Al x The overall thickness of GaN layer is between 20nm-50nm.
A further technical solution lies in: the first N-polar Al x Al group in GaN layerxIt is incrementally gradient to 0.5 from 0, thickness
Degree is between 10nm-20nm；2nd N-polar Al x Al group in GaN layerxKeep 0.5 constant, with a thickness of 5nm-15nm；Third
N-polar Al x Al group in GaN layerxIt is gradient to 0.25-0.3 from 0.5 degression type, with a thickness of 5nm-15nm.
A further technical solution lies in: the thickness of the N-polar GaN buffer layer is between 1 μm -3 μm.
The beneficial effects of adopting the technical scheme are that in this application, Ti/Al base metal ohmic contact can
To be deposited directly on Ga-polar GaN, since GaN is compared with Al x GaN forbidden bandwidth is narrower, compares the prior art to realize
In in Ga-polar Al x Smaller ohmic contact resistance, while Al component are formed on GaN/GaN hetero-junctionsxDegression type gradual change
N-polar Al x GaN layer exists as back barrier layer, further improves 2DEG limit threshold.And in N-polar GaN/Al x GaN
In hetero-junctions, Ti/Al Base Metal is deposited on N-polar GaN, due to N-polar GaN and Ga-polar GaN polarity phase
It poor 180 °, causes the Ti/Al Base Metal being deposited on N-polar GaN that can generate after the high-temperature anneal and is unfavorable for Ohmic contact
2DHG, but the 2DEG for being conducive to Ohmic contact can be then generated on Ga-polar GaN, therefore mix ohm on polar GaN device
Contact resistance ratio N-polar GaN/Al x Ohmic contact resistance on GaN hetero-junctions also wants small.
Al componentxThree layers of Al of gradual change x In GaN layer, Al componentxFirst carry out the incrementally gradual change of 0-0.5 upwards along substrate,
Then keep constant it is constant, after quality of materials stablize after, Al component carry out 0.5-(0.25-0.3) degression type gradual change, exist in this way
When carrying out extension on Ga-polar GaN buffer layer, it is ensured that more preferably Lattice Matching, so as to improve epitaxial material matter
Amount reduces fault in material, improves 2DEG surface density and mobility.This better quality of materials and more preferably ohmic contact characteristic
Solid material foundation has been established to mix the extensive use of polar GaN device.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the embodiment of the present invention one；
Fig. 2 is the structural schematic diagram of the embodiment of the present invention two；
Wherein: 1, substrate layer 2, N-polar GaN buffer layer 3, the first N-polar Al x GaN layer 4, the 2nd N-
polar Al x GaN layer 5, the 3rd N-polar Al x GaN layer 6, N-polar AlN insert layer 7, Ga-polar GaN channel layer
8, source electrode 9, grid 10, drain electrode.
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Overall, it to include substrate layer 1, N-polar that the invention discloses a kind of polar GaN devices of mixing from bottom to top
GaN buffer layer 2, Al componentxIncrementally the first N-polar Al of gradual change x GaN layer 3, Al componentxKeep the 2nd N- of constant
polar Al x GaN layer 4, Al componentx3rd N-polar Al of degression type gradual change x GaN layer 5 and Ga-polar GaN channel
Layer 7；Wherein the first N-polar Al x Al component in GaN layer 3xMaximum, the 2nd N-polar are incremented to from minimum
Al x Al component in GaN layer 4xKeep the first N-polar Al x Al component in GaN layer 3xMaximum it is constant, the 3rd N-polar
Al x Al component in GaN layer 5xFrom the first N-polar Al x Al component in GaN layer 3xMaximum start to be decremented to minimum,
Wherein the 3rd N-polar Al x Al component in GaN layer 5xMinimum be greater than the first N-polar Al x Al component in GaN layer 3x's
Minimum, 0≤x≦1。
In this application, Ti/Al base metal ohmic contact can be deposited directly on Ga-polar GaN, due to GaN
Compared with Al x GaN forbidden bandwidth is narrower, to realize than Ga-polar Al x Smaller Ohmic contact electricity on GaN/GaN hetero-junctions
Resistance, while Al componentxThe N-polar Al of degression type gradual change x GaN layer exists as back barrier layer, further improves 2DEG limit
Threshold.And in N-polar GaN/Al x In GaN hetero-junctions, Ti/Al Base Metal is deposited on N-polar GaN, due to N-
180 ° of polar GaN and Ga-polar GaN polarity spectrum, cause the Ti/Al Base Metal being deposited on N-polar GaN in height
The 2DHG for being unfavorable for Ohmic contact can be generated after temperature annealing, but can then be generated on Ga-polar GaN and be conducive to Ohmic contact
2DEG, therefore mix the ohmic contact resistance ratio N-polar GaN/Al on polar GaN device x Ohmic contact on GaN hetero-junctions
Resistance also wants small.
Al componentxThree layers of Al of gradual change x In GaN layer, Al componentxFirst carry out the incrementally gradual change of 0-0.5 upwards along substrate,
Then keep constant it is constant, after quality of materials stablize after, Al component carry out 0.5-(0.25-0.3) degression type gradual change, exist in this way
When carrying out extension on Ga-polar GaN buffer layer, it is ensured that more preferably Lattice Matching, so as to improve epitaxial material matter
Amount reduces fault in material, improves 2DEG surface density and mobility.This better quality of materials and more preferably ohmic contact characteristic
Solid material foundation has been established to mix the extensive use of polar GaN device.
Embodiment one
The present embodiment is for mixing polar GaN/AlGaN Schottky barrier field effect transistor MESFET device, knot
Attached drawing 1 is closed to be specifically described embodiments of the present invention.MESFET device described in the present embodiment includes: substrate from bottom to top
Layer 1, N-polar GaN buffer layer 2, Al componentxIncrementally the first N-polar Al of gradual change x GaN layer 3, Al componentxKeep normal
2nd N-polar Al of amount x GaN layer 4, Al componentx3rd N-polar Al of degression type gradual change x GaN layer 5, Ga-polar
GaN channel layer 7；The upper surface of the Ga-polar GaN channel layer 7 is equipped with source electrode 8, grid 9, drain electrode 10.
It should be pointed out that in the present embodiment: the substrate layer 1 can be Sapphire Substrate, silicon carbide substrates or silicon
Substrate；2 thickness of N-polar GaN buffer layer is between 1-3 μm；The Al componentxThe incrementally Al of gradual change x GaN layer is
N-polar, epitaxial growth thickness is between 10-20nm, Al groupx0.5 is incrementally gradient to from 0；The Al componentxKeep constant
Al x GaN layer is N-polar, and epitaxial growth is with a thickness of 15nm, Al componentxKeep 0.5 constant；The Al componentxDegression type is gradually
The Al of change x It is N-polar that GaN, which carries on the back barrier layer, and epitaxial growth is with a thickness of 5-15nm, Al groupx0.25- is gradient to from 0.5 degression type
0.3.The Ga-polar GaN channel layer 7 is in the complete Al component of epitaxial growthxThe Al of gradual change x Extension is raw after GaN carries on the back barrier layer
Long, polarity can be controlled in epitaxial material growth, and growth thickness is between 15-35nm.
Embodiment two
The present embodiment is for mixing polar GaN/AlGaN high electron mobility transistor (HEMT) device, in conjunction with attached drawing 2
Embodiments of the present invention are specifically described.In the present embodiment, the HEMT device includes: substrate layer 1, N- from bottom to top
Polar GaN buffer layer 2, Al componentxIncrementally the first N-polar Al of gradual change x GaN layer 3, Al componentxKeep the of constant
Two N-polar Al x GaN layer 4, Al componentx3rd N-polar Al of degression type gradual change x GaN layer 5, N-polar AlN insert layer
6, Ga-polar GaN channel layers 7；The upper surface of the Ga-polar GaN channel layer 7 is equipped with source electrode 8, grid 9, drain electrode 10.
It should be pointed out that in the present embodiment: the substrate layer 1 can be Sapphire Substrate, silicon carbide substrates or silicon
Substrate.The GaN buffer layer is N-polar, and thickness is between 1 μm -3 μm.The Al componentxThe incrementally Al of gradual change x GaN
Layer is N-polar, and epitaxial growth thickness is between 10nm-20nm, Al groupx0.5 is incrementally gradient to from 0.The Al componentx
Keep the Al of constant x GaN layer is N-polar, and epitaxial growth is with a thickness of 15nm, Al groupxKeep 0.5 constant.The Al componentx
The Al of degression type gradual change x It is N-polar that GaN, which carries on the back barrier layer, and epitaxial growth is with a thickness of 5-15nm, Al groupxFrom 0.5 degression type gradual change
To 0.25-0.3.The AlN insert layer is N-polar, in the complete Al component of epitaxial growthxThe N-polar of degression type gradual change
Al x GaN carries on the back epitaxial growth N-polar AlN insert layer after barrier layer, and growth thickness is between 1-2nm.The GaN channel layer is
Ga-polar, the epitaxial growth Ga-polar GaN channel layer after the complete N-polar AlN insert layer of epitaxial growth, polarity can be
It is controlled when epitaxial material growth, growth thickness is between 15nm-35nm.
Claims (6)
1. a kind of polar GaN device of mixing, it is characterised in that: include from bottom to top substrate layer (1), in the substrate layer (1)
N-polar GaN buffer layer (2) that upper surface is equipped with, the Al component being equipped in N-polar GaN buffer layer (2) upper surface
AlxGaN layers of the first N-polar (3) of x incrementally gradual change, is equipped in described AlxGaN layers of first N-polar (3) upper surface
Al component x keep constant AlxGaN layers of the 2nd N-polar (4), the table on AlxGaN layers of the 2nd N-polar (4)
AlxGaN layers of the 3rd N-polar (5) for the Al component x degression type gradual change that face is equipped with, at described AlxGaN layers of 3rd N-polar
(5) the Ga-polar GaN channel layer (7) that upper surface is equipped with, the Ga-polar GaN channel layer (7) upper surface are equipped with source electrode
(8), grid (9) and drain electrode (10)；Wherein the Al component x in AlxGaN layers of first N-polar (3) is incremented by from minimum
To maximum, Al group x is incrementally gradient to 0.5 from 0 in AlxGaN layers of the first N-polar (3), with a thickness of 10nm-20nm
Between；Al component x in 2nd AlxGaN layers of N-polar (4) keeps Al component x in AlxGaN layers of the first N-polar (3)
Maximum is constant, and Al group x holding 0.5 is constant in AlxGaN layers of the 2nd N-polar (4), with a thickness of 5nm-15nm；Third
Al component x in AlxGaN layers of N-polar (5) is since AlxGaN layers of the first N-polar (3) the maximum of Al component x
It is decremented to minimum, wherein the minimum of Al component x is greater than the first N-polar in AlxGaN layers of the 3rd N-polar (5)
The minimum of Al component x in AlxGaN layers (3), 0≤x≤1, Al group x is from 0.5 in AlxGaN layers of the 3rd N-polar (5)
Degression type is gradient to 0.25-0.3, with a thickness of 5nm-15nm.
2. mixing polar GaN device as described in claim 1, it is characterised in that: described AlxGaN layers of 3rd N-polar
(5) N-polar AlN insert layer (6) is equipped between Ga-polar GaN channel layer (7).
3. mixing polar GaN device as claimed in claim 2, it is characterised in that: the N-polar AlN insert layer (6)
Growth thickness between 1nm-2nm.
4. mixing polar GaN device as described in claim 1, it is characterised in that: the substrate layer (1) is sapphire lining
Bottom, silicon carbide substrates or silicon substrate.
5. mixing polar GaN device as described in claim 1, it is characterised in that: the N-polar GaN buffer layer (2)
Thickness between 1 μm -3 μm.
6. mixing polar GaN device as described in claim 1, it is characterised in that: the first AlxGaN layers of N-polar (3),
The overall thickness of 2nd AlxGaN layers of N-polar (4) and the 3rd N-polar AlxGaN layers (5) is between 20nm-50nm.
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| US10096550B2 (en) * | 2017-02-21 | 2018-10-09 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
| CN106920739A (en) * | 2017-04-14 | 2017-07-04 | 中国科学院宁波材料技术与工程研究所 | A kind of epitaxial growth Al based on gradient lamination buffer layer thin filmmGa1‑mThe method of N |
| CN107346785B (en) * | 2017-05-22 | 2019-11-26 | 中国电子科技集团公司第五十五研究所 | A kind of N polarity AlGaN/GaN high electron mobility field-effect tube |
| CN110112273B (en) * | 2019-05-10 | 2020-06-30 | 马鞍山杰生半导体有限公司 | Deep ultraviolet LED epitaxial structure, preparation method thereof and deep ultraviolet LED |
| CN111129127A (en) * | 2019-12-23 | 2020-05-08 | 中山大学 | Structure and method for improving thermal stability and reliability of GaN ohmic contact of N-polarity surface |
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