CN105789025A - Novel cleaning process for wafer film-plated sheet mask - Google Patents

Abstract

The invention provides a novel cleaning process for a wafer film-plated sheet mask. The novel cleaning process comprises the following steps of (1) putting the wafer film-plated sheet mask into a deionized water tank to be soaked at a temperature of 5-30 DEG C for 10-600s; (2) preparing a cleaning liquid: including a, H<2>SO<4> at the concentration of 30-99%, and b, H<2>O<2> at the concentration of 20-70%, uniformly mixing the a H<2>SO<4> and b H<2>O<2> at a volume ratio of 1-10 to 1, and heating the mixture to be 60-100 DEG C, and putting the mixture in another tank for use; (3) putting the wafer film-plated sheet mask soaked in the step (1) into the tank with the cleaning liquid prepared in the step (2) to be soaked for 10-600s; (4) carrying out dehydration processing: performing the dehydration processing by acetone, or propyl alcohol, or anhydrous alcohol; and (5) drying: carrying out final drying processing by a baking oven at a temperature of 80-150 DEG C for 30-600s.

Description

A kind of novel plated wafer diaphragm optical enclosure cleaning technique

Technical field

The present invention relates in process for fabrication of semiconductor device, plated wafer diaphragm optical enclosure cleaning technique.

Background technology

The sweep-out method of organic substance and molecule (particle) that wafer current (wafer) manufactures plated film sheet light shield (mask) remained on surface in exposure technology mainly has two ways:

1: plated film sheet light shield (mask) automatic rinser is mainly used in 10 cun and above exposure technology, the principle of this cleaning machine is to be automatically positioned on servo motor by light shield at the uniform velocity to rotate, by pump medicinal liquid (alkali liquor) pressurizeed by nozzle and be uniformly sprayed at coated surface and first complete impregnation process, then constantly adjusted down the pressure size pressed up and down organic substance and the molecule (particle) of plated film reticle surface to be disposed by the banister brush on Z axis motor, follow-up blow+high speed drying process again through deionized water DIwater ultrasonic vibration and N2, complete whole cleaning process.The defect of this kind of board technique: being still in research and development operational phase at present, technology is still immature, and cost higher ($ 260,000), cost of investment is relatively big, is currently also only applicable to high-end solar photovoltaic industry；Board for low-end product does not still have fixed-type board.The important shortcoming of this kind of board another one is to remain without to realize whole cleaning process plated film reticle surface figure and contact with the zero of object and personnel, and along with the abrasion of hairbrush, the potential risk still suffering from plated film reticle surface damaged graphics exists.

null2: currently used plated film optical enclosure cleaning technique (manual mode) the most general: use dust-free paper to be stained with and wipe organic solvent isopropanol (IPA)、Acetone (CH3COCH3)、Anhydrous alcohol (C2H5OH) etc. is carried out wiping by operator's one direction,But owing to the wiping of each operator firmly varies in size in actual mechanical process、Dust-free paper surface or plated film reticle surface have the factors such as molecule (particle) to exist，Thus being easy to make the figure of plated film reticle surface to produce damage or defect，And this operation also be difficult to ensure fully erased fall plated film reticle surface organic substance (Major organic species composition photoresist is the material having certain viscosity，It is not easy wiping to dispose) and molecule，Thus cannot ensure the integrity of plated film mask set figure,Thus causing wafer (wafer) to expose open defect,Affect the properties of product of components and parts further.

Summary of the invention

For preventing the damage of the plated film reticle surface figure used in exposure technology, the defect of the plated film reticle surface design configuration caused, causing unnecessary product rejection and affect the performance of element device, the present invention provides a kind of novel plated wafer diaphragm optical enclosure cleaning technique, comprises the following steps:

(1) being fixed on special fixture by wafer plated film sheet light shield, be placed in the groove of deionized water, in DIwa groove, the temperature of deionized water is at 5 ~ 30 DEG C, and soak time is 10s ~ 600s；

(2) preparation cleanout fluid: a, H₂SO₄Concentration is 30% ~ 99%；

b,H₂O₂Concentration is 20% ~ 70%

By a, H₂SO₄And b, H₂O₂Mix uniformly by the volume ratio mixing support of 1 ~ 10:1, heat to 60 ~ 100 DEG C and be placed in another groove stand-by；

(3) the wafer plated film sheet light shield on stationary fixture after step (1) being soaked, is placed in the groove being furnished with cleanout fluid that step (2) configures, and the necessary submergence wafer plated film sheet light shield of cleanout fluid, soak time is 10s ~ 600s；

(4) processed: use acetone or propanol or anhydrous alcohol, carry out processed, the wafer plated film sheet light shield of cleanout fluid will be soaked, and be placed in the groove being furnished with above-mentioned chemical solution and soak, solution level submergence must cross wafer plated film sheet light shield, and soak time is 30s ~ 600s；

(5) dry: using baking baking box to carry out last drying and processing, oven temperature is 80 ~ 150 DEG C, and baking time is 30s ~ 600s.

It is an advantage of the invention that, there is relative versatility, it is applicable to the plated film sheet optical enclosure cleaning technique of wafer (wafer) manufacture process, can be completely achieved whole cleaning process operator to contact with the zero of plated film sheet reticle surface figure, thus the defect of the plated film sheet reticle surface figure caused due to personnel's wiping washing and cleaning operation can be prevented, realize wafer (wafer) to manufacture outward appearance and meet the initial designs requirement of product, achieve the integrity of wafer (wafer) function, ensure the zero-fault of wafer (wafer) outward appearance, thus reducing plated film sheet figure to scratch the potential impact to components and parts performance.

Accompanying drawing explanation

Fig. 1 adopts after existing cleaning, plated wafer diaphragm light shield stays wear trace schematic diagram；

Fig. 2 is after utilizing present invention process, and plated wafer diaphragm light shield does not have the schematic diagram of wear trace.

Detailed description of the invention

According to afore mentioned chemical compound method, successively by the H of same volume₂SO₄And H₂O₂Add in chemical tank, and the mixing that stirs, it is heated after having prepared to temperature required, then plated film sheet light shield to be cleaned is fixed on clamping fixture, successively according to each operating procedure in technological process, it is operated can reaching to use the effect (as shown in Figure 2) of cleaning of the present invention.

In cleaning process, as found, organic substance or the molecule (particle) of adhesion are still deposited in surface, optional repetition increases once this cleaning process flow, so whole operation ensures that in whole operating process, operator cannot touch the coating designs figure on plated film sheet light shield, the personnel in whole cleaning process that achieve contact with zero of the plated film figure on plated film sheet light shield, thus avoiding the problem (shown in accompanying drawing 2) of plated film sheet light shield damage, and then ensure that the completeness and efficiency of plated film sheet mask set figure, also just reached to use the effect of this practicality cleaning.

The proportioning of a, b cleanout fluid of the present invention, through test, result is following table such as: when same process)

Experiment results shows cleaning performance: experimental group 2 > experimental group 3 > experimental group 1, H2SO4:H2O2=1:1 time cleaning performance best.

In present invention process, remark additionally as follows:

Immersion treatment, mainly playing the purpose of infiltration, remove floating dust and the graininess attachment of wafer plated film sheet reticle surface, soak time is at 10s ~ 600s, long soaking time, production capacity can be affected, increase and clean cost, cleaning solution, can effectively remove the organic substance of the adhesion on surface and be difficult to the particulate matter removed, soaking temperature is 60 ~ 100 DEG C, and temperature is more high, and cleaning performance is more good.Soak time is 10s ~ 600s, and the time is too short, can affect cleaning performance, overlong time, and wafer plated film sheet reticle surface can be caused to corrode.

Abluent is in temperature control tank, and abluent proportioning liquid level must assure that there be not wafer plated film sheet light shield, wherein can increase H₂SO₄Class acid pump, is carried out the circulation of agent, to ensure H₂SO₄And H₂O₂Geometric ratio mixed proportion or Homogeneous phase mixing, reach to ensure the purpose of cleaning performance；Soak time is 10s ~ 600s, and soak time extends meeting effect more preferably, but can affect production capacity, increases and cleans cost.

Processed: with acetone, or the alcohol solution such as isopropanol, anhydrous alcohol, it is positioned over to be furnished with in above-mentioned chemical solution by the wafer plated film sheet light shield soaking deionized water DIwater and soaks, solution level must not have wafer plated film sheet light shield, soak time is 30s ~ 600s, this processing step mainly make use of the characteristic of the strong absorptive of above chemical solution, fully absorb the moisture content of wafer plated film sheet reticle surface, in actual production operating process, it is the most frequently used industrial dewatering to use isopropanol to carry out dehydration.

Dry: be mainly in view of through soaking acetone, or isopropanol, the wafer plated film sheet light shield of the alcohol solutions such as anhydrous alcohol remains above-mentioned chemical solution, in order to ensure whole cleaning performance, above-mentioned chemical solution must be made quickly to volatilize, will not leave behind vestige, baking baking box is used to carry out last stoving process step, oven temperature is 80 ~ 150 DEG C, temperature is too low, cured effect can reduce, affect whole cleaning performance, in order to ensure whole drying effect, baking time is 30s ~ 600s, or to observe whether wafer plated film sheet reticle surface still judges with residual liquid.

Claims (1)

1. a novel plated wafer diaphragm optical enclosure cleaning technique, comprises the following steps:

(1) being fixed on special fixture by wafer plated film sheet light shield, be placed in the groove of deionized water, in DIwa groove, the temperature of deionized water is at 5 ~ 30 DEG C, and soak time is 10s ~ 600s；

(2) preparation cleanout fluid: a, H₂SO₄Concentration is 30% ~ 99%；

b,H₂O₂Concentration is 20% ~ 70%

By a, H₂SO₄And b, H₂O₂Mix uniformly by the volume ratio mixing support of 1 ~ 10:1, heat to 60 ~ 100 DEG C and be placed in another groove stand-by；

(3) the wafer plated film sheet light shield on stationary fixture after step (1) being soaked, is placed in the groove being furnished with cleanout fluid that step (2) configures, and the necessary submergence wafer plated film sheet light shield of cleanout fluid, soak time is 10s ~ 600s；

(4) processed: use acetone or propanol or anhydrous alcohol, carry out processed, the wafer plated film sheet light shield of cleanout fluid will be soaked, and be placed in the groove being furnished with above-mentioned chemical solution and soak, solution level submergence must cross wafer plated film sheet light shield, and soak time is 30s ~ 600s；

(5) dry: using baking baking box to carry out last drying and processing, oven temperature is 80 ~ 150 DEG C, and baking time is 30s ~ 600s.