CN105762284A - Solar cell preparation method - Google Patents
Solar cell preparation method Download PDFInfo
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- CN105762284A CN105762284A CN201410765316.XA CN201410765316A CN105762284A CN 105762284 A CN105762284 A CN 105762284A CN 201410765316 A CN201410765316 A CN 201410765316A CN 105762284 A CN105762284 A CN 105762284A
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- solar cell
- solaode
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- perovskite
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a solar cell preparation method. The method is realized through the following steps: 101) dissolving halogenated perovskite in dimethylformamide (DMF), spin-coating the obtained solution on conductive glass (ITO)/ an electron transfer layer, and carrying out baking on a 100-degree hot plate to enable solvent to be volatilized; 102) spin-coating a hole transfer layer on the perovskite spin-coated layer obtained in the step 101); and 103) evaporating a gold or aluminum electrode on the hole transfer layer obtained in the step 102), so that a solar cell device is formed. Compared with the process of preparing a silicon-based solar cell device, the process of preparing the solar cell is simple to compound; the cost is low; the service life is long; the efficiency is approximate to that of a polycrystalline silicon device; and the method facilitates large-area popularization.
Description
Technical field
The invention belongs to photoelectric material technical field, be specifically related to the preparation method of a kind of solaode.
Background technology
In the face of the energy and the environmental crisis of growing tension, increasingly urgent to the demand of new forms of energy, regenerative resource, the most more effectively, lower cost utilize inexhaustible solar energy to receive much concern always.But traditional silicon solar cell is due to problems such as cost are high, silicon purification process is big for environment pollution so that it is large-scale application is by a definite limitation.Therefore, find low cost, eco-friendly novel solar battery and become the emphasis of common concern.
1991, porous TiO2 thin films was used for DSSC by Gr tzel etc., it is thus achieved that the photoelectric transformation efficiency of 7.1%, make DSSC cause countries in the world research worker concern (O ' ReganB, Gr tzelM., Nature, 1991,353:737).Although the development through more than 10 years, DSSC achieves certain progress, but still there are problems and have to be solved, it is difficult to compare favourably with traditional silicon solar cell, especially photoelectric transformation efficiency, is difficult to reach the level of silicon solar cell always.
Recently, occur in that a kind of novel thin film solaode, this battery have employed (CH3NH3) PbI3 of perovskite structure, therefore Ca-Ti ore type thin-film solar cells it is referred to as, because it uses all solid state form, both can avoid the problem that liquid electrolyte brings, high conversion efficiency can have been obtained again, this kind of material has certain toxicity, easily to environment.Leaded halo perovskite is the photoelectric conversion material that a class is novel, has extraordinary application prospect in photovoltaic direction.Explore novel perovskite solar energy photovoltaic material and device preparation method thereof, that transformation efficiency can be carried out with the higher grace of acquisition and there is relatively low cost, being significant.
Summary of the invention
For solving the technical problem of existing existence, the embodiment of the present invention provides the preparation method of a kind of solaode.
For reaching above-mentioned purpose, the technical scheme of the embodiment of the present invention is achieved in that
The embodiment of the present invention provides the preparation method of a kind of solaode, and the method is realized by following steps:
Step 101: be dissolved in by halides perovskite in dimethylformamide (DMF), is spin-coated on electro-conductive glass (ITO)/electron transfer layer, toasts, evaporation of solvent on 100 DEG C of hot plates；
Step 102: spin coating hole transmission layer in the perovskite spin-coated layer that step 101 obtains；
Step 103: gold evaporation or aluminum electrode on the hole transmission layer that step 102 obtains, is assembled into solar cell device.
In such scheme, described electron transfer layer material therefor comprises TiO2And Al2O3And PEDOT:PSS.
In such scheme, described hole transmission layer material therefor is Spiro-OMeTAD and P3HT and inorganic compound MoO3。
In such scheme, the thin film-forming method of described halides perovskite includes spin coating, lifts, sprays, and obtains APbX by suitable heat treated after film forming3Or APb (XnY1-n)3Solid-phase construction.
In such scheme, described step 101, step 102, step 103 to be carried out the most under an inert atmosphere.
Compared with prior art, beneficial effects of the present invention:
The process relatively silica-based solar cell device synthesis that the present invention prepares solaode is simple, low cost, and the life-span is long, efficiency close to polycrystalline silicon device, beneficially spread.
Accompanying drawing explanation
Fig. 1 is the theory structure schematic diagram of the perovskite battery that the present invention prepares.
Detailed description of the invention
The present invention is described in detail with detailed description of the invention below in conjunction with the accompanying drawings.
The embodiment of the present invention also provides for a kind of preparation method utilizing halides perovskite to prepare solaode, as it is shown in figure 1, the method is realized by following steps:
Step 101: be dissolved in by halides perovskite in dimethylformamide (DMF), is spin-coated on electro-conductive glass (ITO)/electron transfer layer, toasts, evaporation of solvent on 100 DEG C of hot plates；
Step 102: spin coating hole transmission layer in the perovskite spin-coated layer that step 101 obtains；
Step 103: gold evaporation or aluminum electrode on the hole transmission layer that step 102 obtains, is assembled into solar cell device.
Described electron transfer layer material therefor comprises TiO2And Al2O3And PEDOT:PSS.
Described hole transmission layer material therefor is Spiro-OMeTAD and P3HT or inorganic compound MoO3。
The thin film-forming method of described halides perovskite includes spin coating, lifts, sprays, and obtains APbX by suitable heat treated after film forming3Or APb (XnY1-n)3Solid-phase construction.
Described step 101, step 102, step 103 to be carried out the most under an inert atmosphere.
Embodiment 3:
PEDOT:PSS aqueous solution is spun to pretreated ito glass surface, in atmosphere 100 DEG C of dry 30min, obtains PEDOT:PSS thin film；The black perovskite CH that embodiment 1 will be utilized to prepare3NH3PbI3Solid is dissolved in DMF, obtains the solution that concentration is 40wt%, is spun on PEDOT:PSS thin film in glove box, 120 DEG C of heating 10min, obtains brownish black perovskite thin film；Spiro-OMeTAD is dissolved in chlorobenzene and obtains the solution that concentration is 100mg/mL, this solution is spun on CH3NH3PbI3On thin film；Under a high vacuum, gold evaporation electrode, it is assembled into solar cell device.After tested, battery efficiency is 9.6%.
Embodiment 2
PEDOT:PSS aqueous solution is spun to pretreated ito glass surface, in atmosphere 100 DEG C of dry 30min, obtains PEDOT:PSS thin film；Perovskite N (the CH that embodiment 2 will be utilized to prepare3)4PbI3Solid is dissolved in DMF, obtains the solution that concentration is 20wt%, is spun on PEDOT:PSS thin film in glove box, 120 DEG C of heating 30min, obtains brownish black perovskite thin film；P3HT is dissolved in chlorobenzene and obtains the solution that concentration is 30mg/mL, this solution is spun on N (CH3)4PbI3On thin film；Under a high vacuum, AM aluminum metallization electrode, it is assembled into solar cell device.After tested, battery efficiency is 5.6%.
Claims (5)
1. the preparation method of a solaode, it is characterised in that the method is realized by following steps:
Step 101: be dissolved in by halides perovskite in dimethylformamide (DMF), is spin-coated on electro-conductive glass (ITO)/electron transfer layer, toasts, evaporation of solvent on 100 DEG C of hot plates；
Step 102: spin coating hole transmission layer in the perovskite spin-coated layer that step 101 obtains；
Step 103: gold evaporation or aluminum electrode on the hole transmission layer that step 102 obtains, is assembled into solar cell device.
The preparation method of solaode the most according to claim 1, it is characterised in that: described electron transfer layer material therefor comprises TiO2And Al2O3And PEDOT:PSS.
The preparation method of solaode the most according to claim 1, it is characterised in that: described hole transmission layer material therefor is SpiroOMeTAD and P3HT and inorganic compound MoO3。
The preparation method of solaode the most according to claim 1, it is characterised in that: the thin film-forming method of described halides perovskite includes spin coating, lifts, sprays, and obtains APbX by suitable heat treated after film forming3Or APb (XnY1-n)3Solid-phase construction.
The preparation method of solaode the most according to claim 1, it is characterised in that: described step 101, step 102, step 103 to be carried out the most under an inert atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410765316.XA CN105762284A (en) | 2014-12-15 | 2014-12-15 | Solar cell preparation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410765316.XA CN105762284A (en) | 2014-12-15 | 2014-12-15 | Solar cell preparation method |
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| CN105762284A true CN105762284A (en) | 2016-07-13 |
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| CN201410765316.XA Pending CN105762284A (en) | 2014-12-15 | 2014-12-15 | Solar cell preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256926A (en) * | 2017-05-12 | 2017-10-17 | 哈尔滨工业大学深圳研究生院 | Solar energy and the dual-purpose battery device of ion energy storage and preparation method thereof |
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- 2014-12-15 CN CN201410765316.XA patent/CN105762284A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256926A (en) * | 2017-05-12 | 2017-10-17 | 哈尔滨工业大学深圳研究生院 | Solar energy and the dual-purpose battery device of ion energy storage and preparation method thereof |
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Application publication date: 20160713 |