CN105762209B - Eliminant mercury-cadmium-tellurium detector chips are buried in the low damage of one kind - Google Patents
Eliminant mercury-cadmium-tellurium detector chips are buried in the low damage of one kind Download PDFInfo
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- CN105762209B CN105762209B CN201610236574.8A CN201610236574A CN105762209B CN 105762209 B CN105762209 B CN 105762209B CN 201610236574 A CN201610236574 A CN 201610236574A CN 105762209 B CN105762209 B CN 105762209B
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- mercury
- cadmium
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- eliminant
- tellurium
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- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 18
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000002161 passivation Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a kind of low damages to bury eliminant mercury-cadmium-tellurium detector chips, it includes substrate, and mercury cadmium telluride p-type epitaxial film, ion implanting n-type area, passivation layer, n-type area electrode, p-type area electrode, indium column array, it is related to photoelectric detector technology.The present invention, which uses, prepares p n knots to the organization plan inside mercury cadmium telluride etch pit, so that junction region location is far from material surface, the problems such as detector performance declines, blind element increases caused by defect increment caused by active force of the techniques to photosensitive first area such as cleaning is avoided, removes photoresist.The present invention has very great help to the blind element rate for reducing mercury-cadmium-tellurium focal plane.
Description
Technical field
The invention patent relates to cadmium-telluride-mercury infrared detectors, in particular to a kind of low damage to bury eliminant mercury cadmium telluride infrared acquisition
Device chip.
Background technology
Mercury cadmium telluride is a kind of ideal infrared detector material, with energy gap is adjustable, internal quantum efficiency is high, electric
Son, the advantages that hole mobility is high.With the maturation of Si base mercury cadmium telluride molecular beam epitaxy technologies of preparing, material ruler is breached
Very little limitation makes the cost of material preparation be reduced, and yield rate improves.Third generation mercury-cadmium tellurid detector just towards large area array,
Multicolor, micromation and inexpensive direction are developed.But the reduction of the expansion and pixel centre-to-centre spacing with face battle array scale, blind element problem
As the critical issue of a constraint device performance.Traditional HgCdTe device mostly uses planar device structure, i.e., photosensitive member
N-shaped and p-type area be all located at material surface, when carrying out subsequent device preparation technology, such as surface clean, remove photoresist, easily
It causes defect increment that detector performance is caused to reduce in photosensitive first region, or even causes blind element.How under the conditions of prior art
Reduce influence of the preparation process to device performance to be of great significance to reducing blind element rate.
Invention content
Based on above-mentioned plane mercury cadmium telluride detection chip there are the problem of, the present invention provides a kind of low damage and buries eliminant tellurium cadmium
Mercury probe device chip, it is by the way that p-n junction to be accurately injected into inside mercury cadmium telluride so that junction region location far from material surface,
Influence of the subsequent device technique to photosensitive first performance is effectively prevented, focal plane blind element rate can be greatly reduced.
The structure that eliminant cadmium-telluride-mercury infrared detector chip is buried in the low damage of the present invention is followed successively by：Substrate 1, mercury cadmium telluride p-type
Epitaxial film 2, ion implanting n-type area 3, passivation layer 4, n-type area electrode 5, p-type area electrode 6, indium column array 7.It is injected by boron ion
The photodiode array of infrared photovoltaic detection chip is collectively formed in the n-type area array 3 and p-type area 2 of the photaesthesia member of formation,
It is characterized in that：
The ion implanting n-type area 3 formed using ion injection method prepares the depth on mercury cadmium telluride p-type epitaxial film 2
Inside 0.5~3.0 μm of etch pit；Ion implantation window is equal in magnitude with etch pit.
Advantages of the present invention：
Compared to traditional plane Si base cadmium-telluride-mercury infrared detector chips, eliminant detector core is buried in the low damage of this patent
The p-n junction of piece is that the p-n junction of photaesthesia is injected into inside the mercury cadmium telluride that depth is 0.5~3.0 μm by burying knot technique,
It can avoid subsequent device processing technology photosensitive first reduced performance as caused by the techniques such as clean, remove photoresist introduce defect.
Description of the drawings
Fig. 1 is that the diagrammatic cross-section of eliminant mercury-cadmium-tellurium detector chips is buried in the low damage of the present invention.
Specific implementation mode
Below in conjunction with the accompanying drawings, it is for 25 μm of 640 × 512Si base medium wave mercury-cadmium-tellurium focal plane chips with pixel centre-to-centre spacing
Example, is described in detail specific implementation of the patent mode：
It is the p prepared using molecular beam epitaxial method to prepare low damage and bury the epitaxial material of eliminant mercury-cadmium-tellurium detector chips
The Si base mercury cadmium telluride thin film materials of the vacancy type Hg doping, material component x=0.3, cadmium mercury telluride layer thickness are 5 μm.
As shown in Figure 1, the low damage of the present invention buries eliminant mercury-cadmium-tellurium detector chips and includes：Substrate 101, mercury cadmium telluride p-type
Epitaxial film 2, photosensitive member n-type area 3, passivation layer 4, n-type area electrode 7, p type island region electrode 5, indium column array 6.Wherein photosensitive first N-shaped
Area's array 3 is injected by boron ion to be formed, and the photodiode array of infrared photovoltaic detection chip is collectively formed with p-type area 102.Profit
With wet etching method, the position of photosensitive member and public electrode corrodes to obtain and injection region on mercury cadmium telluride p-type epitaxial film 102
The identical etch pit of design size, corrosion depth are 0.5~3.0 μm；N-type area 3 is prepared into inside etch pit.
640 × 512Si base medium wave mercury cadmium telluride chips that finally above-mentioned technique is prepared carry out I-V and R-V and test, with reading
Focal plane blind element rate is tested after going out circuit inverse bonding interconnection.Experiment find it is low damage bury eliminant detector p-n junction impedance with
Conventional planar junction device p-n junction impedance is suitable, since blind element rate is reduced to 0.1% by 3% caused by technological reason.
Claims (1)
1. eliminant mercury-cadmium-tellurium detector chips are buried in a kind of low damage, including：Infrared substrate (1), mercury cadmium telluride p-type epitaxial film (2),
N-type area (3), passivation layer (4), n-type area top electrode (5), p-type area top electrode (6), indium column array (7)；It is characterized in that：It utilizes
The n-type area (3) that ion injection method is formed prepares the corrosion that depth is 0.5~3.0 μm on mercury cadmium telluride p-type epitaxial film (2)
The inside in hole, ion implantation window is equal in magnitude with etch pit, and the entire interface of p-n junction is embedded in material internal, is isolated with surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610236574.8A CN105762209B (en) | 2016-04-15 | 2016-04-15 | Eliminant mercury-cadmium-tellurium detector chips are buried in the low damage of one kind |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610236574.8A CN105762209B (en) | 2016-04-15 | 2016-04-15 | Eliminant mercury-cadmium-tellurium detector chips are buried in the low damage of one kind |
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| Publication Number | Publication Date |
|---|---|
| CN105762209A CN105762209A (en) | 2016-07-13 |
| CN105762209B true CN105762209B (en) | 2018-08-14 |
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| CN201610236574.8A Active CN105762209B (en) | 2016-04-15 | 2016-04-15 | Eliminant mercury-cadmium-tellurium detector chips are buried in the low damage of one kind |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108872104A (en) * | 2018-06-12 | 2018-11-23 | 中国科学院上海技术物理研究所 | A kind of test method of mercury cadmium telluride thin film component gradient distribution |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946328A (en) * | 2017-11-02 | 2018-04-20 | 中国电子科技集团公司第十研究所 | A kind of preparation method of integrated infrared detection device |
| CN109742096B (en) * | 2018-12-24 | 2021-02-19 | 中国电子科技集团公司第十一研究所 | Ground wire structure of large-array-scale infrared detector |
| CN110310966A (en) * | 2019-06-20 | 2019-10-08 | 中国电子科技集团公司第十一研究所 | A kind of mercury cadmium telluride chip and its processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2405204Y (en) * | 1999-12-10 | 2000-11-08 | 中国科学院上海技术物理研究所 | Photovoltaic prober array having micro-light cone |
| CN101958332A (en) * | 2010-07-23 | 2011-01-26 | 中国科学院上海技术物理研究所 | Photodiode n region structure optimized mercury-cadmium-tellurium (HgCdTe) long-wavelength detection chip |
| CN205609536U (en) * | 2016-04-15 | 2016-09-28 | 中国科学院上海技术物理研究所 | Eliminant mercury -cadmium -telluride detector chip is buried in low damage |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06237005A (en) * | 1993-02-09 | 1994-08-23 | Fujitsu Ltd | Photodetector element and manufacture thereof |
| CN105448375B (en) * | 2015-11-16 | 2017-11-03 | 长安大学 | Using the carborundum PIN-type isotope battery and its manufacture method of αsource |
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2016
- 2016-04-15 CN CN201610236574.8A patent/CN105762209B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2405204Y (en) * | 1999-12-10 | 2000-11-08 | 中国科学院上海技术物理研究所 | Photovoltaic prober array having micro-light cone |
| CN101958332A (en) * | 2010-07-23 | 2011-01-26 | 中国科学院上海技术物理研究所 | Photodiode n region structure optimized mercury-cadmium-tellurium (HgCdTe) long-wavelength detection chip |
| CN205609536U (en) * | 2016-04-15 | 2016-09-28 | 中国科学院上海技术物理研究所 | Eliminant mercury -cadmium -telluride detector chip is buried in low damage |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108872104A (en) * | 2018-06-12 | 2018-11-23 | 中国科学院上海技术物理研究所 | A kind of test method of mercury cadmium telluride thin film component gradient distribution |
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| CN105762209A (en) | 2016-07-13 |
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