CN105762172A - Array substrate, preparation method thereof, display panel and driving method thereof - Google Patents
Array substrate, preparation method thereof, display panel and driving method thereof Download PDFInfo
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- CN105762172A CN105762172A CN201610323887.7A CN201610323887A CN105762172A CN 105762172 A CN105762172 A CN 105762172A CN 201610323887 A CN201610323887 A CN 201610323887A CN 105762172 A CN105762172 A CN 105762172A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
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Abstract
The embodiment of the invention provides an array substrate, a preparation method thereof, a display panel and a driving method thereof and relates to the technical field of display, and an embedded type touch technology can be combined with an AMOLED display technology. The array substrate comprises a plurality of sub pixels, each sub pixel is provided with a display element, one or more sub pixels form a repetition unit, and one of the sub pixels in the repetition unit is provided with a thermosensitive device; the thermosensitive device is connected with a control signal line and a reading signal line, used for outputting current signals obtained after thermoelectric conversion to the reading signal line under the control of the control signal line so as to determine the touch position according to the control signal line and the reading signal line and used for a touch display device.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of array base palte and preparation method thereof, display floater and driving method thereof.
Background technology
At present, OLED (OrganicLightEmittingDiode, Organic Light Emitting Diode) display device, due to have self-luminous, wide viewing angle, fast response time, can the feature such as softening and receive significant attention.
Wherein, AMOLED (ActiveMatrix/OrganicLightEmittingDiode, active matrix organic light-emitting diode (AMOLED) panel) drives OLED luminous by TFT (ThinFilmTransistor, thin film transistor (TFT)).
In recent years, incelltouch (embedded touch) technological development is also classified as the Main way of company technique research by a lot of companies, and embedded touch technology is combined with AMOLED Display Technique, then be increasingly subject to the favor of panel producer.
Summary of the invention
Embodiments of the invention provide a kind of array base palte and preparation method thereof, display floater and driving method thereof, it is possible to embedded touch technology be combined with AMOLED Display Technique.
For reaching above-mentioned purpose, embodiments of the invention adopt the following technical scheme that
First aspect, it is provided that a kind of array base palte, including multiple sub-pixels, each sub-pixel is provided with display element, and at least one sub-pixel constitutes a repetitive, and one of them sub-pixel being arranged in repetitive is additionally provided with temperature-sensitive assembly；Described temperature-sensitive assembly is connected with control signal wire and reading holding wire, for under the control of described control signal wire, current signal after thermo-electric conversion is exported to described reading holding wire, to determine position of touch according to described control signal wire and described reading holding wire.
Preferably, described temperature-sensitive assembly includes the first electrode, the second electrode and the first transistor；The grid of described the first transistor is connected with control signal wire, and the first pole is connected with described reading holding wire, and the second pole is connected with one end of described second electrode；The other end of described second electrode is connected with described first electrode；Wherein, described first electrode is different with the material of described second electrode.
Preferably, described display element includes transistor seconds, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, storage electric capacity and luminescent device.
The grid of described transistor seconds is connected with scan control line traffic control line, and the first pole is connected with data wire, and the second pole is extremely connected with the first of third transistor.
The grid of described 4th transistor is connected with light emitting control line, and the first pole is connected with the first voltage end, and the second pole is extremely connected with the first of described third transistor.
The grid of described 5th transistor is connected with reset control line, and the first pole is connected with the second voltage end, and the second pole is connected with the grid of described third transistor.
The grid of described 6th transistor is connected with described scan control line, and the first pole is connected with the grid of described third transistor, and the second pole is extremely connected with the second of described third transistor.
The grid of described 7th transistor is connected with described light emitting control line, and the first pole is extremely connected with the second of described third transistor, and the second pole is connected with the anode of described luminescent device.
The negative electrode of described luminescent device is connected with tertiary voltage end.
One end of described storage electric capacity is connected with the grid of described third transistor, and the other end is connected with described first voltage end.
It is further preferred that described control signal wire is described scan control line or described reset control line.
It is further preferred that when described temperature-sensitive assembly includes the first electrode, the second electrode and the first transistor, described first electrode is arranged with layer with described negative electrode.
Preferably, a repetitive is a pixel cell.
Second aspect, it is provided that a kind of display floater, including above-mentioned array base palte.
Preferably, the display element in described array base palte is OLED display element；Described display floater also includes encapsulation cover plate.
It is further preferred that described display floater is top emission type display floater；Described OLED display element emits white light；Described encapsulation cover plate is provided with colored film layer.
The third aspect, it is provided that the preparation method of a kind of above-mentioned array base palte, described temperature-sensitive assembly includes the first electrode, the second electrode and the first transistor.
Described preparation method includes: in the region of the corresponding each sub-pixel of Si underlay substrate, form the transistor seconds of display element, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor and storage electric capacity by C-MOS technique, and synchronize to form scan control line, light emitting control line, reset control line and data wire；In the region of one of them sub-pixel of corresponding each repetitive, also synchronize to be formed the first transistor and second electrode of temperature-sensitive assembly；The anode of the luminescent device of described display element is formed by patterning processes；The first electrode of the organic material functional layer of described luminescent device, negative electrode and described temperature-sensitive assembly is formed by evaporation process.
Preferably, the negative electrode of luminescent device and the first electrode of described temperature-sensitive assembly synchronize to be formed；After forming the anode of luminescent device, formed the first pole of negative electrode and described temperature-sensitive assembly by evaporation process before, described preparation method includes: forms pixel and defines layer；Defining formation chock insulator matter on layer in described pixel, wherein said chock insulator matter defines the area of layer side near described pixel and defines the area of layer less than described chock insulator matter away from described pixel；Define formation via on layer and described chock insulator matter in described pixel, described via is connected for the first electrode and the second electrode making temperature-sensitive assembly.
It is further preferred that described chock insulator matter is negative photoresist.
Fourth aspect, it is provided that the driving method of a kind of above-mentioned display floater, including: show line by line at each frame display element；Also including: at each frame, control signal wire controls temperature-sensitive assembly line by line and opens；Described temperature-sensitive assembly refers to be identified by thermo-electric conversion opponent, and is exported by described reading holding wire by recognition result, to determine position of touch according to described control signal wire and described reading holding wire.
Preferably, described temperature-sensitive assembly includes the first electrode, the second electrode and the first transistor.
Control signal wire controls temperature-sensitive assembly line by line and opens, described temperature-sensitive assembly refers to be identified by thermo-electric conversion opponent, and recognition result is exported by described reading holding wire, including: described control signal wire inputs signal line by line so that the first transistor conducting being connected with current control signal line；When finger and screen contact, producing temperature difference between described first electrode and described second electrode, produce thermocurrent on described first electrode and described second electrode, described thermocurrent is by the described the first transistor output of conducting to described reading holding wire.
Preferably, described display element includes transistor seconds, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, storage electric capacity and luminescent device.
Showing line by line at each frame display element and include: at the reset phase of each frame, reset control line inputs signal, described 5th transistor turns, the first voltage end and the second voltage end input voltage line by line, and described third transistor turns on.
In the write phase of each frame, scan control line inputs signal, described transistor seconds and described 6th transistor turns line by line, and the data voltage of data wire input writes the grid of described third transistor by described transistor seconds and described 6th transistor.
Glow phase at each frame, light emitting control line inputs signal line by line, described 4th transistor and described 7th transistor turns, the signal of the first voltage end input makes described luminescent device luminous by described 4th transistor, described third transistor and described 7th transistor.
Preferably, described control signal wire is described scan control line or described reset control line.
The embodiment of the present invention provides a kind of array base palte and preparation method thereof, display floater and driving method thereof, owing to array base palte being provided with temperature-sensitive assembly, when finger touches, finger can transfer heat to temperature-sensitive assembly, temperature-sensitive assembly converts heat to current signal, under the control of control signal wire, temperature-sensitive assembly by the electric current after conversion by reading holding wire output, so just can according to control signal wire with read holding wire and just may determine that the position of touch of finger.Owing to the temperature-sensitive assembly in the embodiment of the present invention is arranged in the sub-pixel of array base palte, it is thus achieved that embedded touch technology.On this basis, when described array base palte is AMOLED array basal plate, it is possible to achieve the combination of embedded touch technology and AMOLED Display Technique.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
The attachment structure schematic diagram one of a kind of temperature-sensitive assembly that Fig. 1 provides for the embodiment of the present invention；
The attachment structure schematic diagram two of a kind of temperature-sensitive assembly that Fig. 2 provides for the embodiment of the present invention；
The attachment structure schematic diagram of a kind of display element that Fig. 3 provides for the embodiment of the present invention；
Fig. 4 drives the sequential chart of each holding wire of display element in Fig. 3；
The attachment structure schematic diagram one of display element and temperature-sensitive assembly in a kind of array base palte that Fig. 5 (a) provides for the embodiment of the present invention；
The attachment structure schematic diagram two of display element and temperature-sensitive assembly in a kind of array base palte that Fig. 5 (b) provides for the embodiment of the present invention；
The structural representation one of a kind of array base palte that Fig. 6 provides for the embodiment of the present invention；
The structural representation one of a kind of display floater that Fig. 7 provides for the embodiment of the present invention；
The structural representation two of a kind of display floater that Fig. 8 provides for the embodiment of the present invention；
The schematic flow sheet of the preparation method of a kind of array base palte that Fig. 9 provides for the embodiment of the present invention；
The structural representation two of a kind of array base palte that Figure 10 provides for the embodiment of the present invention.
Accompanying drawing labelling:
10-temperature-sensitive assembly；101-the first electrode；102-the second electrode；20-display element；201-red sub-pixel；202-green sub-pixels；203-blue subpixels；30-anode；40-organic material functional layer；50-negative electrode；60-encapsulation cover plate；70-colored film layer.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
The embodiment of the present invention provides a kind of array base palte, as shown in Figure 1, including multiple sub-pixels, each sub-pixel is provided with display element (not illustrating in Fig. 1), at least one sub-pixel constitutes a repetitive, and one of them sub-pixel being arranged in repetitive is additionally provided with temperature-sensitive assembly 10.Temperature-sensitive assembly 10 is connected with control signal wire CL and reading holding wire RL, for, under the control of control signal wire CL, being exported by the current signal after thermo-electric conversion to reading holding wire RL, to determine position of touch according to control signal wire CL with reading holding wire RL.
Herein, as it is shown in figure 1, the temperature-sensitive assembly 10 being preferably placed in same a line sub-pixel connects same control signal wire CL, the temperature-sensitive assembly 10 being arranged in same string sub-pixel connects same reading holding wire RL.Control signal wire CL inputs signal line by line, when the control signal wire CL being positioned at certain a line inputs signal, then opens with this row control signal wire CL multiple temperature-sensitive assemblies 10 being connected.
It should be noted that, first, the number for repetitive sub-pixel is not defined, it is possible to be that a sub-pixel constitutes a repetitive, it can also be that two sub-pixels constitute a repetitive, naturally it is also possible to repetitive of multiple compositions of three or more than three.Owing to the embodiment of the present invention is to arrange temperature-sensitive assembly 10 in one of them sub-pixel in repetitive, in order to ensure finger touch to any position, current signal after thermo-electric conversion can be exported to reading holding wire RL by temperature-sensitive assembly 10, thus the number of repetitive sub-pixel can not be too many.
Second, for the concrete structure of temperature-sensitive assembly 10, it is as the criterion so that electric energy can be converted heat energy into, for instance temperature-sensitive assembly 10 can be thermocouple, or, it is also possible to for heat sensitive sensor etc..
The embodiment of the present invention provides a kind of array base palte, owing to array base palte being provided with temperature-sensitive assembly 10, when finger touches, finger can transfer heat to temperature-sensitive assembly 10, temperature-sensitive assembly 10 converts heat to current signal, under the control of control signal wire CL, temperature-sensitive assembly 10 by the electric current after conversion by reading holding wire RL output, so just can according to control signal wire CL with read holding wire RL and just may determine that the position of touch of finger.Owing to the temperature-sensitive assembly 10 in the embodiment of the present invention is arranged in the sub-pixel of array base palte, it is thus achieved that embedded touch technology.On this basis, when described array base palte is AMOLED array basal plate, it is possible to achieve the combination of embedded touch technology and AMOLED Display Technique.
Preferably, as in figure 2 it is shown, temperature-sensitive assembly 10 includes the first electrode the 101, second electrode 102 and the first transistor T1；The grid of the first transistor T1 is connected with control signal wire CL, and the first pole is connected with reading holding wire RL, and the second pole is connected with one end of the second electrode 102；The other end and first electrode 101 of the second electrode 102 are connected；Wherein, the first electrode 101 is different with the material of the second electrode 102.
Herein, it should be noted that, first electrode 101 is as touch control electrode, and one end is connected with the second electrode 102, and the other end is unsettled, when finger touches, for receiving the heat of finger, in order to ensure when finger touches, the heat of finger can pass to the first electrode 101, first electrode 101 should be arranged on the top of the second electrode 102, and is positioned as close to the upper surface at array base palte.
Temperature-sensitive assembly 10 converts heat to the principle of current signal: when finger touches, finger transfers heat to the first electrode 101, the temperature of the first electrode 101 raises, owing to the first electrode 101 and the second electrode 102 have temperature difference, and first electrode 101 different with the material of the second electrode 102, thus thermo-electromotive force can be produced on the first electrode 101 and the second electrode 102, thermo-electromotive force then can produce electric current.
Wherein, material for the first electrode 101 and the second electrode 102 is not defined, and the material of the first electrode 101 and the second electrode 102 such as can be selected from Fe (ferrum), Ni (nickel), Cu (copper), Pt (platinum) etc..
The embodiment of the present invention, when finger touches, when the temperature transfer of finger gives the first electrode 101, the temperature of the first electrode 101 raises, and owing to the first electrode 101 and the second electrode 102 have temperature difference, thus can produce thermo-electromotive force.When control signal wire CL control the first transistor T1 opens, the electric current that thermo-electromotive force produces will pass through the first transistor T1 output extremely reading holding wire RL.
Preferably, as it is shown on figure 3, display element 20 includes transistor seconds T2, third transistor T3, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, the 7th transistor T7, storage electric capacity Cst and luminescent device D.
The grid of transistor seconds T2 is connected with scan control line Gate, and the first pole is connected with data wire Vdate, and the second pole is extremely connected with the first of third transistor T3.
The grid of the 4th transistor T4 is connected with light emitting control line EM, and the first pole is connected with the first voltage end ELVDD, and the second pole is extremely connected with the first of described third transistor T3.
The grid of the 5th transistor T5 is connected with reset control line Reset, and the first pole is connected with the second voltage end Vint, and the second pole is connected with the grid of described third transistor T3.
The grid of the 6th transistor T6 is connected with scan control line Gate, and the first pole is connected with the grid of third transistor T3, and the second pole is extremely connected with the second of third transistor T3.
The grid of the 7th transistor T7 is connected with light emitting control line EM, and the first pole is extremely connected with the second of third transistor T3, and the second pole is connected with the anode of luminescent device D.
The negative electrode of luminescent device D is connected with tertiary voltage end ELVSS.
One end of storage electric capacity Cst is connected with the grid of third transistor T3, and the other end and the first voltage end ELVDD are connected.
Herein, it is preferable that the display element 20 being arranged in same a line sub-pixel connects same scan control line Gate, same reset control line Reset and same light emitting control line EM.The display element 20 being arranged in same string sub-pixel connects same data wire Date.
Wherein, third transistor T3 is for driving transistor, and transistor seconds T2, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, the 7th transistor T7 are switch transistors pipe.
It should be noted that the first transistor T1 in the embodiment of the present invention, transistor seconds T2, third transistor T3, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, the 7th transistor T7 can be P-type transistor, it is also possible to for N-type transistor.The embodiment of the present invention is P-type transistor for all transistors illustrate.Wherein, the first transistor T1, transistor seconds T2, third transistor T3, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, the 7th transistor T7 the first pole be source electrode, the second pole is drain electrode.Or, the first transistor T1, transistor seconds T2, third transistor T3, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, the 7th transistor T7 the first pole be drain electrode, the second pole is source electrode.
Luminescent device D can be that LED (LightEmittingDiode, light emitting diode) or OLED is at interior multiple electric current driven for emitting lights device.In embodiments of the present invention, it is for the OLED explanation carried out.
Additionally, in embodiments of the present invention, tertiary voltage end ELVSS can be low-voltage or earth terminal.
Hereinafter the work process of display element 20 is described in detail.The work process of display element 20 specifically can be divided into three phases, is respectively as follows: reset phase, write phase and glow phase.Fig. 3 is the circuit diagram of display element 20, and Fig. 4 is the sequential chart of each holding wire in the circuit work process shown in Fig. 3.As shown in Figure 4, t1 represents that reset phase, t2 represent write phase, and t3 represents glow phase.
Concrete, at reset phase t1, reset control line Reset input low level signal, 5th transistor T5 conducting, the voltage of the second voltage end Vint input is by after the 5th transistor T5, it is possible to the grid of third transistor T3 and the voltage of the node a of storage electric capacity Cst being connected with the 5th transistor T5 are upgraded to Vint+Vth.Wherein, Vth is the threshold voltage of third transistor T3.When the voltage of the second voltage end Vint input is very low, or when being no-voltage (such as, when the threshold voltage vt h of third transistor T3 is more than no-voltage, second voltage end Vint can be set to no-voltage, to play the effect that node voltage resets), the voltage being actually written into node a is Vth.Now, the voltage storing electric capacity Cst two ends is Vdd-Vint.
Herein, it should be noted that, one end owing to storing electric capacity Cst is connected with the first voltage end ELVDD, and the first voltage end ELVDD always for store electric capacity Cst one end the first voltage Vdd is provided, electric charge according to storage electric capacity Cst keeps principle, one end that storage electric capacity Cst and third transistor T3 is connected can produce a voltage, and so this voltage just can make third transistor T3 be constantly in conducting state at write phase t2 and glow phase t3.
At write phase t2, scan control line Gate input low level signal, transistor seconds T2 and the six transistor T6 turns on, the data voltage of data wire Date input is by the grid of transistor seconds T2, third transistor T3 and the six transistor T6 input to third transistor T3, and the grid voltage of third transistor T3 is Vdate+Vth.
At glow phase t3, light emitting control line EM input low level signal, the 4th transistor T4 and the seven transistor T7 conducting, the first voltage end ELVDD input voltage signal, the current potential of node b is Vdd.At this moment, the electric current driven for emitting lights device D flowing through third transistor T3 is luminous.Owing to third transistor T3 is in saturation region, therefore, it can the current characteristics according to saturation region transistor, show that the saturation current flowing through third transistor T3 is:
IOLED=K × (VGS-Vth)2
=K × [(VG-VS)-Vth]2
=K × [(Vdate+Vth)-Vdd-Vth]2
=K × (Vdate-Vdd)2
Wherein, K is the current constant being associated with third transistor T3；VGSFor the grid of third transistor T3 relative to the voltage of source class, i.e. the node b voltage relative to node a, Vth is the threshold voltage of third transistor T3.
In prior art, the Vth between different pixels unit is different, and the Vth in same pixel is it is also possible to drift about in time, and this will result in display brightness difference, owing to this species diversity is image-related with what show before, is therefore often rendered as ghost phenomena.But, for the present invention, as can be seen from the above equation, the operating current I of OLEDOLEDNot by the impact of threshold voltage vt h, only relevant with Vdate and Vdd.So just third transistor T3 can be avoided, due to manufacturing process and the problem operating the threshold voltage vt h drift caused for a long time, eliminate the impact that the electric current flowing through luminescent device D is caused, significantly improve the uniformity of luminescent device D display brightness, it is ensured that the normal operation of luminescent device D.
It should be noted that in the above-described embodiment, all transistors are all illustrate for P-type transistor.When transistor adopts N-type transistor, now, in circuit, the sequential of each signal should also be as doing corresponding adjustment.Wherein, sequential and the corresponding signal sequence shown in Fig. 4 contrary (namely the phase contrast of the two is 180 °) of data wire Date, reset control line Reset, scan control line Gate, light emitting control line EM.
Embodiments provide the annexation of multiple transistors in display element 20, storage electric capacity Cst and luminescent device D, by multiple transistors and storage electric capacity Cst, circuit is switched and charge and discharge control, can so that the electric current for driven for emitting lights device D passing through transistor be unrelated with the threshold voltage of transistor, compensate for the inconsistent of the threshold voltage due to transistor or offset the current difference flowing through luminescent device D caused, improve the uniformity of luminescent device D luminosity, be obviously improved the display effect of display element 20.
Preferably, as shown in Fig. 5 (a) and Fig. 5 (b), control signal wire CL is scan control line Gate or reset control line Reset.
When control signal wire CL is scan control line Gate or reset control line Reset, temperature-sensitive assembly 10 can be connected with scan control line Gate as Suo Shi Fig. 5 (a), or, it is connected with reset control line Reset as Suo Shi Fig. 5 (b).When scan control line Gate or reset control line Reset opens line by line, the temperature-sensitive assembly 10 being connected with scan control line Gate or reset control line Reset is also opened line by line.
Herein, it is necessary to explanation be, although light emitting control line EM opens line by line, but it is present to ensure that the normal luminous of the temperature-sensitive assembly 10 accuracy of identification when finger touches and luminescent device D, thus, it is preferable to, identification and the luminescence of luminescent device D when finger touches are to carry out in the different stages.That is, temperature-sensitive assembly 10 is connected with scan control line Gate, or is connected with reset control line Reset, and is not connected with light emitting control line EM.
Further, as shown in Figure 6, when including first electrode the 101, second electrode 102 and the first transistor T1 at temperature-sensitive assembly 10, the negative electrode 50 of the first electrode 101 and luminescent device D is arranged with layer.
Herein, the negative electrode 50 of luminescent device D is by being deposited with formation, and the negative electrode 50 of the first electrode 101 and luminescent device D is arranged with layer, and namely the first electrode 101 can pass through an evaporation process formation with the negative electrode 50 of luminescent device D.Wherein, how the negative electrode 50 of the first electrode 101 with luminescent device D is disconnected it is not defined.
In the embodiment of the present invention, owing to the first electrode 101 of temperature-sensitive assembly 10 is arranged with layer with the negative electrode 50 of luminescent device D, therefore, it can be deposited with the first electrode 101 and negative electrode 50 by evaporation process simultaneously, simplify the processing technology of array base palte.
Owing to only arranging temperature-sensitive assembly 10 in one of them sub-pixel of repetitive, the number of repetitive sub-pixel is more many, when finger touches, the accuracy of identification of temperature-sensitive assembly 10 will reduce, but, the number of the sub-pixel that repetitive includes is more few such as includes a sub-pixel, temperature-sensitive assembly 10 is then set in each sub-pixel, so will increase technology difficulty and cost, thus, the embodiment of the present invention is preferred, and a repetitive is a pixel cell.
When a repetitive includes a pixel cell, as shown in Fig. 5 (a), pixel cell includes three sub-pixels, and three sub-pixels can respectively red sub-pixel 201, green sub-pixels 201 and blue subpixels 203.
Under constituting three sub-pixels respectively red sub-pixel 201 of above-mentioned pixel cell, green sub-pixels 201 and blue subpixels 203 situation, owing to when changing the aperture opening ratio of blue subpixels 203, human eye is not easily discovered.It is therefore preferred that when a sub-pixel in pixel cell is blue subpixels 203, temperature-sensitive assembly 10 can be arranged in blue subpixels 203.So, the aperture opening ratio of blue subpixels 203 is caused to reduce even if being provided with temperature-sensitive assembly 10 in blue subpixels 203, owing to human eye is not easy to discover, therefore that the impact of display effect is less.
The embodiment of the present invention provides a kind of display floater, including above-mentioned array base palte.
The embodiment of the present invention provides a kind of display floater, owing to the array base palte of display floater being provided with temperature-sensitive assembly 10, when finger touches, finger can transfer heat to temperature-sensitive assembly 10, under the control of control signal wire CL, temperature-sensitive assembly 10 converts heat to current signal, and by reading holding wire RL output, so just can just may determine that the position of touch of finger according to control signal wire CL and reading holding wire RL.Owing to the temperature-sensitive assembly 10 in the embodiment of the present invention is arranged in the sub-pixel of array base palte, it is thus achieved that embedded touch technology.On this basis, when described array base palte is AMOLED array basal plate, it is possible to achieve the combination of embedded touch technology and AMOLED Display Technique.
Preferably, as it is shown in fig. 7, the display element in array base palte is OLED display element；Display floater also includes encapsulation cover plate 60.
Wherein, when the display element in array base palte is OLED display element, luminescent device D includes anode 30, organic material functional layer 40 and negative electrode 50.
Preferably, as shown in Figure 8, display floater is top emission type display floater；OLED display element emits white light；Encapsulation cover plate 60 is provided with colored film layer 70.
Wherein, the colored film layer 70 on encapsulation cover plate 60 is corresponding with the organic material functional layer 40 in OLED display element.
When organic material functional layer 40 glow, green glow or during blue light, organic material functional layer 40 needs to adopt FMM ((FineMetalMask in evaporation process, precision metallic mask plate) carry out three evaporations, and the evaporation mouth of FMM has certain restriction, can not be too little, otherwise can cause evaporation mouth blocking.And when OLED display element emits white light, organic material functional layer 40 can adopt OpenMask (big aperture mask plate) to be once deposited with in evaporation process, it is less that such organic material functional layer 40 just can be done, such that it is able to be effectively improved the resolution of OLED display panel.
The preparation method that the embodiment of the present invention provides a kind of array base palte as shown in Figure 6, temperature-sensitive assembly 10 includes the first electrode the 101, second electrode 102 and the first transistor T1.As it is shown in figure 9, described preparation method includes:
S100, in the region of the corresponding each sub-pixel of Si (silicon) underlay substrate 80, by C-MOS (ComplementaryMetalOxideSemiconductor, complementary metal oxide semiconductors (CMOS)) technique formed the transistor seconds T2 of display element 20, third transistor T3, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, the 7th transistor T7 and storage electric capacity Cst, and synchronize formed scan control line Gate, light emitting control line EM, reset control line Reset and data wire Date.
nullOwing to adopting C-MOS technique on Si substrate，Not only can realize the active matrix addressed making of display panel pixel，SRAM (StaticRandomAccessMemory can also be realized on the silicon die，SRAM)、T-CON(TimerControlRegister，Sequential control circuit) etc. the making of multi-functional driving control circuit，Greatly reduce the aerial lug of device，Increase unfailing performance，Realize integrated lightweight，Thus，The embodiment of the present invention forms the transistor seconds T2 of display element 20 by C-MOS technique、Third transistor T3、4th transistor T4、5th transistor T5、6th transistor T6、7th transistor T7 and storage electric capacity Cst，And synchronize to form scan control line Gate、Light emitting control line EM、Reset control line Reset and data wire Date.By IC, ((IntegrateCircuit, integrated circuit) function is integrated with display function.
S101, in the region of one of them sub-pixel of corresponding each repetitive, also synchronize to be formed the first transistor T1 and second electrode 102 of temperature-sensitive assembly 10.
The transistor seconds T2 of display element 20, third transistor T3, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, the 7th transistor T7, storage electric capacity Cst can also formed by C-MOS technique, when scan control line Gate, light emitting control line EM, reset control line Reset and data wire Date, synchronize to be formed the first transistor T1 and second electrode 102 of temperature-sensitive assembly 10.
Wherein, the material of the second electrode 102 such as can be selected from Fe, Ni, Cu, Pt etc..
S102, formed the anode 30 of luminescent device D of display element 20 by patterning processes.
For anode 30, can according to the illumination mode of display element 20, it can be transparent or opaque, when for time transparent, its material can be ITO (IndiumTinOxide, tin indium oxide), when for, time opaque, the structure of ITO/Ag (silver)/ITO can be adopted.
S103, formed the first electrode 101 of the organic material functional layer 40 of luminescent device D, negative electrode 50 and temperature-sensitive assembly 10 by evaporation process.
Wherein, the material of the first electrode 101 such as can be selected from Fe, Ni, Cu, Pt etc., and the material of the first electrode 101 and the material of the second electrode 102 are different.
The embodiment of the present invention, utilize C-MOS technique while forming drive circuit (realizing IC function), form the part except luminescent device D of display element 20 and the first transistor T1 of temperature-sensitive assembly 10 and the second electrode 102, can be integrated with display function by IC function, simultaneously can also the touch controllable function (the first transistor and the second electrode 102) in temperature-sensitive assembly 10 of integrated temperature-sensitive assembly 10, simplify the processing technology of array base palte.
Preferably, the negative electrode 50 of luminescent device D and the first electrode 101 of temperature-sensitive assembly 10 synchronize to be formed.
After forming the anode 30 of luminescent device D, formed the first electrode 101 of negative electrode 50 and temperature-sensitive assembly 10 by evaporation process before, above-mentioned preparation method includes:
S200, as shown in Figure 10, forms pixel and defines layer 90.
Wherein, on array base palte, formation pixel defines layer 90 is to be separated by different sub-pixels.
S201, as shown in Figure 10, defines formation chock insulator matter 100 on layer 90 in pixel, and wherein chock insulator matter 100 defines the area of layer 90 side near pixel and defines the area of layer 90 less than chock insulator matter 100 away from pixel.
Owing to the image after negative photoresist exposure imaging is wide at the top and narrow at the bottom, thus preferably, the material of chock insulator matter 100 is negative photoresist.
Herein, the chock insulator matter 100 formed defines, near pixel, the area that the area of layer 90 side defines layer 90 less than chock insulator matter 100 away from pixel and is present to ensure that owing to chock insulator matter 100 and pixel define the difference in height that layer 90 produces, when being deposited with the first electrode 101 of the negative electrode 50 of luminescent device D and temperature-sensitive assembly 10 at the same time, negative electrode 50 and the first electrode 101 can disconnect.
S202, defining on layer 90 and chock insulator matter 100 formation via in pixel, via is for making the first electrode 101 of temperature-sensitive assembly 10 be connected with the second electrode 102.
Wherein it is possible to define formation via on layer 90 and chock insulator matter 100 in pixel by etching technics.
It should be noted that after forming via, be initially formed organic material functional layer 40, form the first electrode 101 of negative electrode 50 and temperature-sensitive assembly 10 afterwards again through evaporation process.
In the embodiment of the present invention, the first electrode 101 and negative electrode 50 are deposited with formation simultaneously, simplify processing technology.Further, formation chock insulator matter 100 on layer 90 is defined in pixel, and chock insulator matter 100 defines the area of layer 90 side near pixel and defines the area of layer 90 less than chock insulator matter 100 away from pixel, difference in height is created owing to chock insulator matter 100 and pixel define layer 90, when being therefore deposited with the first electrode 101 and negative electrode 50 at the same time, the first electrode 101 and negative electrode 50 can disconnect.
The embodiment of the present invention also provides for the driving method of a kind of display floater, shown in reference Fig. 1, including: show line by line at each frame display element 20；Also including: at each frame, control signal wire CL controls temperature-sensitive assembly 10 line by line and opens；Temperature-sensitive assembly 10 refers to be identified by thermo-electric conversion opponent, and by recognition result by reading holding wire RL output, to determine position of touch according to control signal wire CL and reading holding wire RL.
Wherein, at each frame, display floater had both displayed the display of element 20, carried out again the touch-control of temperature-sensitive assembly 10.
It should be noted that open owing to control signal wire CL controls temperature-sensitive assembly 10 line by line, then all temperature-sensitive assemblies 10 being connected with current control signal line CL in each row are opened simultaneously.
For the concrete structure of temperature-sensitive assembly 10, it is as the criterion so that electric energy can be converted heat energy into, for instance temperature-sensitive assembly 10 can be thermocouple, or, it is also possible to for heat sensitive sensor etc..
The embodiment of the present invention provides the driving method of a kind of above-mentioned display floater, owing to the array base palte of display floater being provided with temperature-sensitive assembly 10, at each frame, when control signal wire CL control line by line temperature-sensitive assembly 10 open time, if display floater is touched by finger, finger just transfers heat to temperature-sensitive assembly 10, temperature-sensitive assembly 10 converts heat to current signal, and by reading holding wire RL output, so just can just may determine that the position of touch of finger according to control signal wire CL and reading holding wire RL.Owing to the temperature-sensitive assembly 10 in the embodiment of the present invention is arranged in the sub-pixel of array base palte, it is thus achieved that embedded touch technology.On this basis, when described array base palte is AMOLED array basal plate, it is possible to achieve the combination of embedded touch technology and AMOLED Display Technique.
Preferably, as in figure 2 it is shown, temperature-sensitive assembly 10 includes the first electrode the 101, second electrode 102 and the first transistor T1.
Control signal wire CL controls temperature-sensitive assembly 10 line by line and opens, temperature-sensitive assembly 10 refers to be identified by thermo-electric conversion opponent, and by recognition result by reading holding wire RL output, including: control signal wire CL inputs signal line by line so that turn on the current control signal line CL the first transistor T1 being connected；When finger and screen contact, producing temperature difference between the first electrode 101 and the second electrode 102, produce thermocurrent on the first electrode 101 and the second electrode 102, the first transistor T1 output that thermocurrent is passed through to turn on is to reading holding wire RL.
Herein, owing to the first electrode 101 is as touch control electrode, when finger touches, for receiving the heat of finger, thus the first electrode 101 should be arranged on the top of the second electrode 102, and is positioned as close to the upper surface at array base palte.
Material for the first electrode 101 and the second electrode 102 is not defined, and the material of the first electrode 101 and the second electrode 102 such as can be selected from Fe, Ni, Cu, Pt etc., and the first electrode 101 is different with the material of the second electrode 102.
Preferably, as it is shown on figure 3, display element 20 includes transistor seconds T2, third transistor T3, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, the 7th transistor T7, storage electric capacity Cst and luminescent device D.
The first transistor T1 in the embodiment of the present invention, transistor seconds T2, third transistor T3, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, the 7th transistor T7 can be P-type transistor, it is also possible to for N-type transistor.The embodiment of the present invention is P-type transistor for all transistors illustrate.Wherein, the first transistor T1, transistor seconds T2, third transistor T3, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, the 7th transistor T7 the first pole be source electrode, the second pole is drain electrode.
Herein, each frame can include reset phase, write phase and glow phase.Based on this, show line by line at each frame display element 20 and include:
As shown in Figure 4, at the reset phase t1 of each frame, reset control line Reset inputs signal line by line, and the 5th transistor T5 conducting, the first voltage end ELVDD and the second voltage end Vint input voltage, third transistor T3 turns on.
Wherein, third transistor T3 is for driving transistor.
Concrete, at reset phase t1, reset control line Reset input low level signal, 5th transistor T5 conducting, the voltage of the second voltage end Vint input is by after the 5th transistor T5, it is possible to the grid of third transistor T3 and the voltage of the node a of storage electric capacity Cst being connected with the 5th transistor T5 are upgraded to Vint+Vth.Wherein, Vth is the threshold voltage of third transistor T3.When the voltage of the second voltage end Vint input is very low, or when being no-voltage (such as, when the threshold voltage vt h of third transistor T3 is more than no-voltage, second voltage end Vint can be set to no-voltage, to play the effect that node voltage resets), the voltage being actually written into node a is Vth.Now, the voltage storing electric capacity Cst two ends is Vdd-Vint.
Herein, it should be noted that, one end owing to storing electric capacity Cst is connected with the first voltage end ELVDD, first voltage end ELVDD provides the first voltage Vdd for storage electric capacity Cst always, electric charge according to storage electric capacity CST keeps principle, therefore one end that storage electric capacity Cst and third transistor T3 is connected can produce a voltage, and so this voltage just can make third transistor T3 be constantly in conducting state at write phase t2 and glow phase t3.
Inputting signal line by line at the write phase t2 of each frame, scan control line Gate, transistor seconds T2 and the six transistor T6 turns on, and the data voltage of data wire Date input writes the grid of third transistor T3 by transistor seconds T2 and the six transistor T6.
Concrete, at write phase t2, scan control line Gate input low level signal, transistor seconds T2 and the six transistor T6 turns on, the data voltage of data wire Date input is by the grid of transistor seconds T2, third transistor T3 and the six transistor T6 input to third transistor T3, and the grid voltage of third transistor T3 is Vdate+Vth.
Glow phase t3 at each frame, light emitting control line EL inputs signal line by line, 4th transistor T4 and the seven transistor T7 conducting, the signal of the first voltage end ELVDD input makes luminescent device D luminous by the 4th transistor T4, third transistor T3 and the seven transistor T7.
Concrete, at glow phase t3, light emitting control line EM input low level signal, the 4th transistor T4 and the seven transistor T7 conducting, the first voltage end ELVDD input voltage signal, the current potential of node b is Vdd.At this moment, the electric current driven for emitting lights device D flowing through third transistor T3 is luminous.Owing to third transistor T3 is in saturation region, therefore, it can the current characteristics according to saturation region transistor, show that the saturation current flowing through third transistor T3 is:
IOLED=K × (VGS-Vth)2
=K × [(VG-VS)-Vth]2
=K × [(Vdate+Vth)-Vdd-Vth]2
=K × (Vdate-Vdd)2
Wherein, K is the current constant being associated with third transistor T3；VGSFor the grid of third transistor T3 relative to the voltage of source class, i.e. the node b voltage relative to node a, Vth is the threshold voltage of third transistor T3.In prior art, the Vth between different pixels unit is different, and the Vth in same pixel is it is also possible to drift about in time, and this will result in display brightness difference, owing to this species diversity is image-related with what show before, is therefore often rendered as ghost phenomena.
As can be seen from the above equation, the operating current I of OLEDOLEDNot by the impact of threshold voltage vt h, only relevant with Vdate and Vdd.So just third transistor T3 can be avoided, due to manufacturing process and the problem operating the threshold voltage vt h drift caused for a long time, eliminate the impact that the electric current flowing through luminescent device D is caused, significantly improve the uniformity of luminescent device D display brightness, it is ensured that the normal operation of luminescent device D.
Circuit is switched and charge and discharge control by the embodiment of the present invention by multiple transistors and storage electric capacity Cst, can so that the electric current for driven for emitting lights device D passing through transistor be unrelated with the threshold voltage of transistor, compensate for the inconsistent of the threshold voltage due to transistor or offset the current difference flowing through luminescent device D caused, improve the uniformity of luminescent device D luminosity, be obviously improved the display effect of display element 20.
Preferably, as shown in Fig. 5 (a) and Fig. 5 (b), control signal wire CL is scan control line Gate or reset control line Reset.
When control signal wire CL is scan control line Gate or reset control line Reset, temperature-sensitive assembly 10 can be connected with scan control line Gate as Suo Shi Fig. 5 (a), or, it is connected with reset control line Reset as Suo Shi Fig. 5 (b).
Wherein, owing to scan control line Gate or reset control line Reset is scanned line by line at the reset phase t1 or write phase t2 of each frame, therefore, at the reset phase t1 or write phase t2 of each frame, when finger touches, temperature-sensitive assembly 10 can opponent refer to be identified.
The above; being only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any those familiar with the art is in the technical scope that the invention discloses; change can be readily occurred in or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with described scope of the claims.
Claims (16)
1. an array base palte, including multiple sub-pixels, each sub-pixel is provided with display element, it is characterised in that at least one sub-pixel constitutes a repetitive, and one of them sub-pixel being arranged in repetitive is additionally provided with temperature-sensitive assembly；
Described temperature-sensitive assembly is connected with control signal wire and reading holding wire, for under the control of described control signal wire, current signal after thermo-electric conversion is exported to described reading holding wire, to determine position of touch according to described control signal wire and described reading holding wire.
2. array base palte according to claim 1, it is characterised in that described temperature-sensitive assembly includes the first electrode, the second electrode and the first transistor；
The grid of described the first transistor is connected with control signal wire, and the first pole is connected with described reading holding wire, and the second pole is connected with one end of described second electrode；
The other end of described second electrode is connected with described first electrode；
Wherein, described first electrode is different with the material of described second electrode.
3. array base palte according to claim 1 and 2, it is characterised in that described display element includes transistor seconds, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, storage electric capacity and luminescent device；
The grid of described transistor seconds is connected with scan control line traffic control line, and the first pole is connected with data wire, and the second pole is extremely connected with the first of third transistor；
The grid of described 4th transistor is connected with light emitting control line, and the first pole is connected with the first voltage end, and the second pole is extremely connected with the first of described third transistor；
The grid of described 5th transistor is connected with reset control line, and the first pole is connected with the second voltage end, and the second pole is connected with the grid of described third transistor；
The grid of described 6th transistor is connected with described scan control line, and the first pole is connected with the grid of described third transistor, and the second pole is extremely connected with the second of described third transistor；
The grid of described 7th transistor is connected with described light emitting control line, and the first pole is extremely connected with the second of described third transistor, and the second pole is connected with the anode of described luminescent device；
The negative electrode of described luminescent device is connected with tertiary voltage end；
One end of described storage electric capacity is connected with the grid of described third transistor, and the other end is connected with described first voltage end.
4. array base palte according to claim 3, it is characterised in that described control signal wire is described scan control line or described reset control line.
5. array base palte according to claim 3, it is characterised in that when described temperature-sensitive assembly includes the first electrode, the second electrode and the first transistor, described first electrode is arranged with layer with described negative electrode.
6. array base palte according to claim 1 a, it is characterised in that repetitive is a pixel cell.
7. a display floater, it is characterised in that include the array base palte described in any one of claim 1-6.
8. display floater according to claim 7, it is characterised in that the display element in described array base palte is OLED display element；
Described display floater also includes encapsulation cover plate.
9. display floater according to claim 8, it is characterised in that described display floater is top emission type display floater；Described OLED display element emits white light；
Described encapsulation cover plate is provided with colored film layer.
10. the preparation method of an array base palte as claimed in claim 3, it is characterised in that described temperature-sensitive assembly includes the first electrode, the second electrode and the first transistor；
Described preparation method includes: in the region of the corresponding each sub-pixel of Si underlay substrate, form the transistor seconds of display element, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor and storage electric capacity by C-MOS technique, and synchronize to form scan control line, light emitting control line, reset control line and data wire；
In the region of one of them sub-pixel of corresponding each repetitive, also synchronize to be formed the first transistor and second electrode of temperature-sensitive assembly；
The anode of the luminescent device of described display element is formed by patterning processes；
The first electrode of the organic material functional layer of described luminescent device, negative electrode and described temperature-sensitive assembly is formed by evaporation process.
11. preparation method according to claim 10, it is characterised in that the negative electrode of luminescent device and the first electrode of described temperature-sensitive assembly synchronize to be formed；
After forming the anode of luminescent device, formed the first pole of negative electrode and described temperature-sensitive assembly by evaporation process before, described preparation method includes:
Form pixel and define layer；
Defining formation chock insulator matter on layer in described pixel, wherein said chock insulator matter defines the area of layer side near described pixel and defines the area of layer less than described chock insulator matter away from described pixel；
Define formation via on layer and described chock insulator matter in described pixel, described via is connected for the first electrode and the second electrode making temperature-sensitive assembly.
12. preparation method according to claim 11, it is characterised in that described chock insulator matter is negative photoresist.
13. a driving method for the display floater as described in any one of claim 7-9, including: show line by line at each frame display element；It is characterized in that, also include:
At each frame, control signal wire controls temperature-sensitive assembly line by line and opens；
Described temperature-sensitive assembly refers to be identified by thermo-electric conversion opponent, and is exported by described reading holding wire by recognition result, to determine position of touch according to described control signal wire and described reading holding wire.
14. driving method according to claim 13, it is characterised in that described temperature-sensitive assembly includes the first electrode, the second electrode and the first transistor；
Control signal wire controls temperature-sensitive assembly line by line and opens, and described temperature-sensitive assembly refers to be identified by thermo-electric conversion opponent, and is exported by described reading holding wire by recognition result, including:
Described control signal wire inputs signal line by line so that the first transistor conducting being connected with current control signal line；When finger and screen contact, producing temperature difference between described first electrode and described second electrode, produce thermocurrent on described first electrode and described second electrode, described thermocurrent is by the described the first transistor output of conducting to described reading holding wire.
15. driving method according to claim 13, it is characterised in that described display element includes transistor seconds, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor, storage electric capacity and luminescent device；
Showing line by line at each frame display element and include: at the reset phase of each frame, reset control line inputs signal, described 5th transistor turns, the first voltage end and the second voltage end input voltage line by line, and described third transistor turns on；
In the write phase of each frame, scan control line inputs signal, described transistor seconds and described 6th transistor turns line by line, and the data voltage of data wire input writes the grid of described third transistor by described transistor seconds and described 6th transistor；
Glow phase at each frame, light emitting control line inputs signal line by line, described 4th transistor and described 7th transistor turns, the signal of the first voltage end input makes described luminescent device luminous by described 4th transistor, described third transistor and described 7th transistor.
16. driving method according to claim 15, it is characterised in that described control signal wire is described scan control line or described reset control line.
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| CN111489701B (en) * | 2020-05-29 | 2021-09-14 | 上海天马有机发光显示技术有限公司 | Array substrate, driving method thereof, display panel and display device |
| WO2022266932A1 (en) * | 2021-06-24 | 2022-12-29 | 京东方科技集团股份有限公司 | Display substrate and display apparatus |
| TWI818487B (en) * | 2022-03-28 | 2023-10-11 | 友達光電股份有限公司 | Display device |
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