CN105762166B - Light emitting diode matrix - Google Patents
Light emitting diode matrix Download PDFInfo
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- CN105762166B CN105762166B CN201610171733.0A CN201610171733A CN105762166B CN 105762166 B CN105762166 B CN 105762166B CN 201610171733 A CN201610171733 A CN 201610171733A CN 105762166 B CN105762166 B CN 105762166B
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- emitting diode
- type semiconductor
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- 239000011159 matrix material Substances 0.000 title abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 155
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000012790 adhesive layer Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- -1 carbide Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 10
- 229910001128 Sn alloy Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000011469 building brick Substances 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020658 PbSn Inorganic materials 0.000 description 1
- 101150071746 Pbsn gene Proteins 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- AZCUJQOIQYJWQJ-UHFFFAOYSA-N oxygen(2-) titanium(4+) trihydrate Chemical compound [O-2].[O-2].[Ti+4].O.O.O AZCUJQOIQYJWQJ-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
Abstract
The present invention discloses a kind of light emitting diode matrix, which is made of N number of (N≤3) light emitting diode, including：Permanent substrate；Adhesive layer is located on permanent substrate；Second conductive layer is located on adhesive layer；Second separate layer is located on the second conductive layer；Bridging metal layer is located on the second separate layer；First separate layer is located on bridging metal layer；Electric conductivity articulamentum is located on the first separate layer；Epitaxial structure is located on electric conductivity articulamentum；First electrode is located on epitaxial structure.It is electrically connected to each other between light emitting diode through bridging metal layer.
Description
The application be on 04 25th, 2011 the applying date, application No. is 201110102886.7, entitled " shine
The divisional application of the application for a patent for invention of diode array ".
Technical field
The present invention relates to a kind of light emitting diode matrixs, more particularly to one kind by N number of (N≤3) light emitting diode
Formed light emitting diode matrix.
Background technique
In recent years, due to the progress of extension and technology, make light emitting diode (light emitting diode, letter
Claim LED) become great potential one of solid-state lighting light source.Due to the limitation of physical mechanism, LED is only capable of with DC powered,
Therefore, it is any using LED as the Lighting Design of light source in, require collocation rectification and decompression etc. electronic building bricks, by electric power public affairs
The alternating current directly provided is provided and is converted to DC power supply workable for LED.However increase the electronic building bricks such as rectification and decompression, except making
Outside at the increase of illumination cost, the low AC DC transfer efficiency of electronic building bricks such as rectification and decompression, volume bigger than normal etc. can
Influence the reliability and service life when LED is used in normal lighting application.
Summary of the invention
Light emitting diode matrix includes：Permanent substrate；Adhesive layer is located on permanent substrate；Second conductive layer is located at bonding
On layer；Second separate layer is located on the second conductive layer；Bridging metal layer is located on the second separate layer；First separate layer position
On bridging metal layer；Electric conductivity articulamentum is located on the first separate layer；Epitaxial structure is located on electric conductivity articulamentum；
And first electrode is located on epitaxial structure.
Light emitting diode matrix includes：Permanent substrate；Adhesive layer is located on permanent substrate；First conductive layer is located at bonding
On layer；Second separate layer is located on the first conductive layer；Bridging metal layer is located on the second separate layer；First separate layer position
On bridging metal layer；Electric conductivity articulamentum is located on the first separate layer；And epitaxial structure be located at electric conductivity articulamentum it
On.
Light emitting diode matrix, including N number of light emitting diode (N≤3), and through bridging gold between light emitting diode
Belong to layer to be electrically connected to each other.
Detailed description of the invention
Figure 1A -1I is the structural profile illustration of disclosed light emitting diode matrix 1.
Figure 1A ' -1G ' is the structure schematic top plan view of disclosed light emitting diode matrix 1.
Fig. 2A -2I is the structural profile illustration of disclosed light emitting diode matrix 2.
Fig. 2A ' -2G ' is the structure schematic top plan view of disclosed light emitting diode matrix 2.
Description of symbols
1,2：Light emitting diode matrix
11：Growth substrate
12：The first conductive type semiconductor layer
13：Active layer
14：The second conductive type semiconductor layer
15：Groove
16：Platform
17：Electric conductivity articulamentum
18：Aisle
19：First separate layer
20：Conduction region
21：Bridge metal layer
22：Second separate layer
23：Second conductive layer
24：Adhesive layer
25：Permanent substrate
26：First conductive layer
27：First electrode
28：Second electrode
Ⅰ：First area
Ⅱ：Second area
Ⅲ：Third region
A, b：Electrical shallow trench isolation
Specific embodiment
The present invention discloses the light emitting diode matrix as composed by N (N≤3) a light emitting diode, including the
One light emitting diode, the second light emitting diode ... sequentially shine to (N-1) light emitting diode and N
Diode.Light emitting diode matrix has first area (I), third region (III) again, and wherein first area (I) includes the
One light emitting diode, third region (III) include N light emitting diode；And second area (II) is located at first area
(I) between third region (III), and including the second light emitting diode ... sequentially to (N-1) light emitting diode list
Member.
Embodiment one is disclosed to be formed light emitting diode matrix 1 by 3 light emitting diodes.Its structural profile shows
It is intended to as shown in Figure 1A -1I, shown in structure schematic top plan view such as Figure 1A ' -1G '.The manufacturing method of light emitting diode matrix 1, packet
Include following steps：
1. providing growth substrate 11, and epitaxial structure is formed on growth substrate 11, epitaxial structures include first
Conductive-type semiconductor layer 12, active layer 13 and the second conductive type semiconductor layer 14, as shown in Figure 1A and Figure 1A '.
2. then etch first area (I), second area (II) portion of epi structure to form multiple grooves 15, wherein
It is not etched epitaxial structure and then forms multiple platforms 16；And the epitaxial structure of third region (III) is not etched, such as Figure 1B and
Shown in Figure 1B '.
3. electric conductivity articulamentum 17 is formed on the partial region of multiple platforms 16, wherein not by electric conductivity articulamentum
The land regions of 17 coverings then form multiple aisle 18；As shown in Fig. 1 C and Fig. 1 C '.
4. on partially electronically conductive property articulamentum 17, on multiple aisle 18 and the side wall of multiple grooves 15 formed first
Separate layer 19, but on the partially electronically conductive property articulamentum 17 of first area (I) and whole electric conductivity of third region (III) connect
It connects and is not covered by the first separate layer 19 on layer 17.Conduction region 20 be second area (II) electric conductivity articulamentum 17 on not
The region covered by the first separate layer 19.As shown in Fig. 1 D and Fig. 1 D '.
5. on the first separate layer 19, within conduction region 20, multiple grooves 15 and third region (III) it is all conductive
Property articulamentum 17 on form bridging metal layer 21, but will be used as in the partially electronically conductive property articulamentum 17 of first area (I) subsequent
The electric connection of second conductive layer and the second conductive type semiconductor layer, so side is not covered by bridging metal layer 21 thereon.
And the region a for being located at second area (II) neighbouring conduction region 20 is not also covered by bridging metal layer 21, can be used as electrical isolation
It is used；As shown in Fig. 1 E and Fig. 1 E '.Positioned at the part of first area (I), bridging metal layer 21 is extended within multiple grooves 15
And it is electrically connected with the first conductive type semiconductor layer 12；Bridging metal layer 21 on multiple platforms 16 and aisle 18 passes through
First separate layer 19 electrically completely cuts off with the second conductive type semiconductor layer 14.On conduction region 20 in second area (II) across
It connects metal layer 21 to be electrically connected by electric conductivity articulamentum 17 and the second conductive type semiconductor layer 14, part bridges metal layer 21 then
It extends within multiple grooves 15 and is electrically connected with the first conductive type semiconductor layer 12；Positioned at multiple platforms 16 and aisle 18 it
On bridging metal layer 21 electrically completely cut off by the first separate layer 19 with the second conductive type semiconductor layer 14.Positioned at third region
(III) bridging metal layer 21 is electrically connected by electric conductivity articulamentum 17 and the second conductive type semiconductor layer 14.
6. forming the second separate layer 22, but second on bridging metal layer 21 and on the region a of second area (II)
Separate layer 22 does not cover the partially electronically conductive property articulamentum 17 of first area (I)；As shown in Fig. 1 F and Fig. 1 F '.
7. forming second on the second separate layer 22 and on the partially electronically conductive property articulamentum 17 of first area (I) to lead
Electric layer 23；As shown in Fig. 1 G and Fig. 1 G '.
8. forming adhesive layer 24 on the second conductive layer 23；Permanent substrate 25 is provided；And by adhesive layer 24 and permanently
Substrate 25 bonds, as shown in fig. 1H.
9. removing growth substrate 11 to expose the first conductive type semiconductor layer 12 and be roughened its surface.Then, multiple
It is etched down in aisle 18 from the first conductive type semiconductor layer 12 and exposes the first separate layer 19, to form N number of light-emitting diodes
Pipe unit.Wherein the first light emitting diode is located at first area (I), the second light emitting diode ... sequentially to
(N-1) light emitting diode is located at second area (II) and N light emitting diode is located at third region (III).Finally,
First electrode 27 is formed on 12 coarse surface of the first conductive type semiconductor layer of N light emitting diode, that is, forms warp
The light emitting diode matrix 1 of the N number of light emitting diode of 21 electrical series of metal layer is bridged, as shown in Figure 1 I.
Embodiment two is disclosed to be formed light emitting diode matrix 2 by 3 light emitting diodes.Its structural profile shows
It is intended to as shown in Fig. 2A -2I, shown in structure schematic top plan view such as Fig. 2A ' -2G '.The production method of light emitting diode matrix 2, packet
Include following steps：
1. providing growth substrate 11, and epitaxial structure is formed on growth substrate 11, epitaxial structures include first
Conductive-type semiconductor layer 12, active layer 13 and the second conductive type semiconductor layer 14, as shown in Fig. 2A and Fig. 2A '.
2. then etching part epitaxial structure to be to form multiple grooves 15, wherein be not etched epitaxial structure then formed it is more
A platform 16, as shown in Fig. 2 B and Fig. 2 B '.
3. electric conductivity articulamentum 17 is formed on the partial region of multiple platforms 16, wherein not by electric conductivity articulamentum
The land regions of 17 coverings then form multiple aisle 18；As shown in Fig. 2 C and Fig. 2 C '.
4. on partially electronically conductive property articulamentum 17, on multiple aisle 18 and the side wall of multiple grooves 15 formed first
Separate layer 19.Second area (II), third region (III) the region that is not covered by the first separate layer 19 of electric conductivity articulamentum 17
Then it is defined as conduction region 20；As shown in Fig. 2 D and Fig. 2 D '.
5. on the first separate layer of part 19, conduction region 20 and multiple grooves 15 in addition to third region (III) it
Interior formation bridges metal layer 21.But it will be as subsequent second conductive layer and the in first separate layer of part 19 of first area (I)
Electrically isolation is used one conductive-type semiconductor layer, therefore side's covering does not bridge metal layer 21 thereon.In the more of third region (III)
Within a groove 15 and the first separate layer 19 of multiple platforms will be as subsequent first conductive layer and the second conductive type semiconductor layer
Electrically isolation is used, therefore not rectangular thereon at covering bridging metal layer 21, as shown in Fig. 2 E and Fig. 2 E '.Positioned at first area
(I) part bridging metal layer 21 is extended within multiple grooves 15 and is electrically connected with the first conductive type semiconductor layer 12, position
Bridging metal layer 21 on multiple platforms 16 and aisle 18 passes through the first separate layer 19 and the second conductive type semiconductor layer 14
Electrically isolation.It is located at the bridging metal layer 21 on conduction region 20 in second area (II) and passes through electric conductivity articulamentum 17 and the
Two conductive semiconductor layer 14 is electrically connected；Part bridging metal layer 21 extends within multiple grooves 15 and and the first conductive type
Semiconductor layer 12 is electrically connected；Bridging metal layer 21 on multiple platforms 16 and aisle 18 by the first separate layer 19 with
The electrically isolation of the second conductive type semiconductor layer 14.The bridging metal layer 21 being located on conduction region 20 in third region (III) is logical
It crosses electric conductivity articulamentum 17 and the second conductive type semiconductor layer 14 is electrically connected.In addition, being located at second area (II), third region
(III) region b of neighbouring conduction region 20 is not that bridging metal layer 21 is completely covered in, can be used as electrically isolation and is used.
6. on bridging metal layer 21, on first separate layer of part 19 of first area (I) and second area (II)
In do not formed the second separate layer 22 on the completely covered region b of bridging metal layer 21, but the second separate layer 22 does not cover
Within multiple grooves 15 in third region (III), on the first separate layer 19 of multiple platforms and in third region (III) not by
Bridge the completely covered region b of metal layer 21；As shown in Fig. 2 F and Fig. 2 F '.
7. on the second separate layer 22, within multiple grooves 15 of third region (III), multiple platforms first separate
The first conductive layer 26 is not formed by the completely covered region b of bridging metal layer 21 on layer 19 and in third region (III)；Such as
Shown in Fig. 2 G and Fig. 2 G '.
8. forming adhesive layer 24 on the first conductive layer 26；Permanent substrate 25 is provided, and by adhesive layer 24 and permanently
Substrate 25 bonds, as illustrated in figure 2h.
9. removing growth substrate 11 to expose the first conductive type semiconductor layer 12 and be roughened its surface.Then, multiple
It is etched down among aisle 18 from the first conductive type semiconductor layer 12 and exposes the first separate layer 19, to form N number of luminous two
Pole pipe unit.Wherein the first light emitting diode is located at first area (I), and the second light emitting diode to (N-1) is sent out
Optical diode unit is located at second area (II) and N light emitting diode is located at third region (III).Then at first area
(I) the first conductive type semiconductor layer 12 of not formed bridging 21 part of metal layer, which is etched down to, exposes electric conductivity articulamentum
17, and second electrode 28 is formed on electric conductivity articulamentum 17, that is, it is formed through bridging 21 electrical series of metal layer N number of luminous two
The light emitting diode matrix 2 of pole pipe unit, as shown in figure 2i.
In above-described embodiment one and embodiment two, the material of growth substrate 11 includes an at least material, selected from GaAs,
Material group composed by gallium phosphide, sapphire, silicon carbide, gallium nitride or aluminium nitride.Epitaxial structure is by a kind of iii-v
Semiconductor material is formed, this III-V group semi-conductor material is AlGaInP series compound or aluminum indium gallium nitride seriation
Close object.Electric conductivity articulamentum 17 includes one or more kinds of material, selected from tin indium oxide, cadmium tin, antimony tin,
The group that indium zinc oxide, zinc oxide aluminum and zinc-tin oxide are constituted.First separate layer 19, the second separate layer 22 are insulation material
Material can respectively include one or more kinds of materials, selected from silica, titanium oxide, titanium dioxide, titanium pentoxide,
The group that titanium sesquioxide, ceria, zinc sulphide and aluminium oxide are constituted.First conductive layer 26, the second conductive layer 23 can
For silver or aluminium.Adhesive layer 24 be conductive material, composition material can be metal or metal alloy, such as AuSn, PbSn, AuGe,
AuBe,AuSi,Sn,In,Au,PdIn.Permanent substrate 25 is conductive material, for example including carbide, metal, metal alloy, gold
Belong to the materials such as oxide or metallic composite.The material for bridging metal layer 21 includes metal, metal alloy or metal oxide.
Embodiment cited by the present invention is only to illustrate the present invention, is not used to limit the scope of the present invention.Anyone
Any modification apparent easy to know or change made for the present invention all do not depart from spirit and scope of the invention.
Claims (10)
1. a kind of light emitting diode construction, includes：
Electrically conductive substrate；
The first conductive type semiconductor layer, active layer and the second conductive type semiconductor layer are sequentially stacked on the electrically conductive substrate；
Metal layer is set between the electrically conductive substrate and the first conductive type semiconductor layer, and the metal layer includes multiple first
Part and the second part for connecting these first parts, wherein respectively the first part passes through the first conductive type semiconductor layer and should
Active layer and connect with the second conductive type semiconductor layer, which is located at the first conductive type semiconductor layer can lead with this
Between electric substrate, and the metal layer is electrically insulated with the first conductive type semiconductor layer and the active layer respectively；
Electric conductivity articulamentum, between the first conductive type semiconductor layer and the electrically conductive substrate, and the electric conductivity articulamentum
It is electrically connected with the first conductive type semiconductor layer；
Adhesive layer is set between the electrically conductive substrate and the first conductive type semiconductor layer, which penetrates the bonding
Layer is electrically connected with the metal layer；
Electrode connects on the surface of the electric conductivity articulamentum towards the first conductive type semiconductor layer, and through the electric conductivity
Layer is electrically connected with the first conductive type semiconductor layer；And
First separate layer is set between the electric conductivity articulamentum and the second part.
2. light emitting diode construction as described in claim 1, wherein the adhesive layer be set to metal layer second part with can lead
Between electric substrate.
3. light emitting diode construction as described in claim 1, wherein metal layer and adhesive layer have different materials.
4. light emitting diode construction as described in claim 1, wherein the first part of metal layer has identical with second part
Material.
5. light emitting diode construction as described in claim 1, wherein also include the second separate layer, be set to the adhesive layer and be somebody's turn to do
Between metal layer.
6. light emitting diode construction as claimed in claim 1 or 2, wherein the electrode and the electric conductivity articulamentum are physically contacted.
7. light emitting diode construction as claimed in claim 1 or 2, wherein the electric conductivity articulamentum surrounds these first parts,
And the electric conductivity articulamentum between adjacent first part is continuous unbroken.
8. light emitting diode construction as claimed in claim 1 or 2, wherein a part of the adhesive layer covers the metal layer
The second part.
9. light emitting diode construction as claimed in claim 1 or 2, wherein the adhesive layer includes gold, tin or gold-tin alloy.
10. light emitting diode construction as claimed in claim 1 or 2, wherein the electrically conductive substrate includes metal, carbide, gold
Belong to alloy, metal oxide or metallic composite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610171733.0A CN105762166B (en) | 2011-04-25 | 2011-04-25 | Light emitting diode matrix |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110102886.7A CN102760745B (en) | 2011-04-25 | 2011-04-25 | Light emitting diode matrix |
| CN201610171733.0A CN105762166B (en) | 2011-04-25 | 2011-04-25 | Light emitting diode matrix |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110102886.7A Division CN102760745B (en) | 2011-04-25 | 2011-04-25 | Light emitting diode matrix |
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| Publication Number | Publication Date |
|---|---|
| CN105762166A CN105762166A (en) | 2016-07-13 |
| CN105762166B true CN105762166B (en) | 2018-11-20 |
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| TWI676285B (en) | 2017-05-04 | 2019-11-01 | 國立交通大學 | Electrodeless light-shielding of light-emitting diode display structure and process thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101960602A (en) * | 2008-02-29 | 2011-01-26 | 欧司朗光电半导体有限公司 | Optoelectronic semi-conductor body and method for the production thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007018360A1 (en) * | 2005-08-09 | 2007-02-15 | Seoul Opto Device Co., Ltd. | Ac light emitting diode and method for fabricating the same |
| TWI341039B (en) * | 2007-03-30 | 2011-04-21 | Delta Electronics Inc | Light emitting diode apparatus |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101960602A (en) * | 2008-02-29 | 2011-01-26 | 欧司朗光电半导体有限公司 | Optoelectronic semi-conductor body and method for the production thereof |
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| CN105762166A (en) | 2016-07-13 |
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