CN105744758B

CN105744758B - Power semiconductor control

Info

Publication number: CN105744758B
Application number: CN201511002184.6A
Authority: CN
Inventors: R.肖尔茨
Original assignee: Robert Bosch GmbH
Current assignee: Robert Bosch GmbH
Priority date: 2014-12-30
Filing date: 2015-12-29
Publication date: 2021-01-01
Anticipated expiration: 2035-12-29
Also published as: DE102014227027A1; CN105744758A

Abstract

The invention relates to a power component for controlling high currents. The invention relates to an intelligent power component having plates 1, 2 aligned parallel to each other, which are connected to a current input and a current output of a power semiconductor 8. It is thus possible to control the high current 16, for example for resistance welding, without excessively generating heat losses.

Description

Power semiconductor control

Technical Field

The invention relates to a power component having a power semiconductor, which can be operated by means of intelligent control. Power components are used to control high currents, in particular currents in the kA range, as are required in industrial processes, efficient machines and electric vehicles or in resistance welding.

Background

The starting point of the invention is a device as shown in EP1921908B 1. Fig. 1 shows a schematic side view of a circuit arrangement with a power module of this type. The power module and the circuit board are arranged between the cooling body and the pressing device. There is a desire to use such power modules as universally as possible in very different fields of application. For this reason, the power module should be compact, easily replaceable and configurable for a particular application.

The object of the invention is therefore to provide a power module which is as compact as possible and which is generally easily configurable and retrofittable for very different applications, in particular the applications described above.

Disclosure of Invention

The starting point of the invention is a power component for controlling high currents.

High currents are understood to be currents as they are used, for example, in resistance welding, for driving servo motors or for operating efficient machines or for operating vehicles. In general, currents in the one-digit or two-digit kiloampere range at voltages greater than 50 volts are preferred in three-phase networks. In the first place, applications can be considered in which it is necessary to provide a rectification of the intermediate circuit voltage or current, for example inverters and converters for operating electric motors or also vehicle motors.

The power component comprises at least one power semiconductor having a current input, a current output and a control terminal. The power component further comprises an electrically conductive current input plate and an electrically conductive current output plate, wherein the current input of the power semiconductor is connected to the current input plate and the current output of the power semiconductor is connected to the current output plate. Copper or molybdenum, for example, may be used as the plate material. The current input plate and/or the current output plate may be constructed in a single piece or in multiple pieces. The control terminals of the power semiconductors are arranged between two plates which are preferably oriented parallel to one another. Additionally, the power component comprises a connection scheme for a control device, by means of which the control terminals can be controlled.

The connection scheme may be implemented by a connection mechanism for the control device. The connection mechanism can be implemented such that an integration of the control device into the power component and/or a connection of, for example, an external control device to the power component becomes possible.

For integrating the control device, a receiving device can be provided for the control device, for example, between the plates in an insulating manner, preferably between two plates on a first component carrier arranged substantially parallel to the plates. The receiving means can be a base or a recess on the component carrier, by means of which base or recess components required for the control device/control device connection can be arranged on the component carrier. It is advantageous here that the power component can be realized particularly compact and that the control device is protected from mechanical damage by means of the plate. The control device can also be easily retrofitted or installed. The control device may also already be integrated into the component carrier when the component carrier is manufactured.

However, it is also conceivable to arrange the control device on the power component or the component carrier such that the control device is arranged outside the boards or only partially between the boards. It is advantageous here that the control device is easily accessible. However, precautions must be taken to mechanically protect the control device. For example, a detachable plug connection can also be provided, by means of which the control device can be connected to the power component. Alternatively, the control device can be arranged on a second component carrier, which is connected to the first component carrier.

The connection means can also be implemented as an industrial field bus interface (for example SERCOS (serial real-time communication protocol), process field bus and the like), so that the connection of the external and/or internal control device to the power unit can be implemented by means of the field bus. The control device must then likewise have a compatible industrial field bus interface, for example an ethernet interface in the corresponding field bus.

The power component may also comprise a combination of the previously mentioned connection solutions, so that not only an integrated solution but also external connections can be realized. The integrated control unit can also communicate with external control units and/or superordinate (process) controllers via a field bus interface.

As a connecting agent between the power semiconductor terminals and the board, a bonding agent can be used which is electrically conductive and enables a material-dependent connection. For example, soldering or sintering, if appropriate also welding, can be considered as a joining process. The control terminal is arranged between the two plates such that it has no electrical contact with the plates and remains accessible between the plates.

The power semiconductors may be current-controlled or voltage-controlled semiconductors, such as diode transistors, IGBTs, FETs or MOSFETs or the like. The control of the semiconductor can be performed by means of a gate-source voltage. In this sense, the control of the semiconductors of the other types of structure can then take place according to their data pages. Power semiconductors with a flat (metal) housing are also conceivable as power semiconductors. The housing protects the power semiconductors and facilitates planar connection to the board due to the flat shape. This improves the thermal conductivity of the overall device and reduces losses. The control terminals are arranged substantially parallel to the board within the board and can be controlled independently of the current input or the current output.

The control device may be an integrated circuit which is preferably equipped with sufficient computing power and memory so that, in addition to the pure control of the power semiconductor, other higher-level tasks for operating the power components can be fulfilled. An external circuit, such as a driver or a field bus interface, may additionally be provided. However, the external circuitry may also be comprised by the integrated circuit, such that minimal or even no external wiring is required.

THE ADVANTAGES OF THE PRESENT INVENTION

The connection means for connecting and/or integrating the control device, which can operate at the most in depth and autonomously and is therefore easily configurable for very different fields of application, also ensures the availability of compact and universally usable power components. If a programmable control device with sufficient computing power and memory is used, the control device can be easily reprogrammed for a particular field of application or expanded within its functional scope, and the program modules can be reloaded or replaced. This may also be done through an internet connection or a computer network (e.g., cloud).

In an electric resistance welding application, the power component can be controlled, for example, optimally for the electric resistance welding process with a first control program. In an application for operating a battery-operated electric vehicle, the power component can be controlled optimally for the application using the second control program. If a power module is used in the power supply module, a corresponding third control program can be set. All or individual control programs can be stored in the memory of the control device in an adjustable manner or the control device can be implemented such that the control programs are easily reloadable or changeable, for example by means of a field bus interface. The mechanical construction of the power component is simplified to the assembly into a mechanical component holder as used for example for disk units. This increases the flexibility in industrial applications, since the power component according to the invention is easily replaceable or easily retrofittable.

Preferably, the plates are connected to one another in their edge regions by means of a non-conductive connecting agent, wherein the plates and the connecting agent form a housing. Examples of suitable binders are resins. Materials consisting of hard or soft plastics are likewise conceivable. The housing realized by means of the plate and the connecting agent encloses and protects the components, in particular the power semiconductor, comprised by the power component plate and, in the integrated solution, also the control device from external influences. This is particularly advantageous just under adverse environmental conditions (as it often occurs in industrial environments). Water spray protection according to the IP protection class can thus also be easily achieved.

If the power semiconductor and/or the control device are arranged on a component carrier, this component carrier can preferably be arranged substantially parallel between the two boards, wherein the control terminals can be connected with conductor lines comprised by the component carrier. The component carrier may preferably be a circuit board (PCB- "printed circuit board"). The component carrier may have a VIA contact to the board (e.g. so-called VIA ═ vertical interconnect access).

The device preferably has a power component and a control device, wherein the control device is connected to the power component by means of a connecting mechanism. In the case of an integrated solution, the control device is at least partially, preferably completely, comprised by the power components. In the case of non-integrated solutions, the control device is arranged mechanically/electrically on the power component or is preferably connected to the power component by means of a field bus interface.

The control device preferably comprises a control pulse generator and preferably also a power supply for supplying the control pulse generator. If the power semiconductor and the control device are arranged on a common component carrier, the transmission of the control pulses can take place by means of conductor tracks applied to the component carrier.

A fast drive stage is preferably provided, which is arranged between the output of the control pulse generator and the control terminal of the power semiconductor, in order to decouple the control pulse generator from the control terminal of the power semiconductor and thus to be able to control the power semiconductor in dependence on the power in the shortest time. The drive stage can also be included in the control device or arranged separately from the control device, for example on a common component carrier. The device ensures the most deep and self-sufficient operation of the power components.

In the case of an integration of the control device into a power component, which can be used without additional superordinate measures, only the voltage supply must be ensured. This can be achieved by means of a dc voltage source or by tapping of the transformer coil and rectification of the tapped-off voltage, depending on the application. Finally, it makes sense, for example, if the power component is used together with a transformer.

Preferably, the control device and/or the power component is/are designed to output a status signal of the operating state of the power semiconductor, the power component or the control device. The operating state specific to the power component can therefore be reported to the higher-level process control. Depending on the mode of operation, the process control can then introduce suitable measures, such as trapping errors, cooling measures in the event of overheating, and the like. The status signal can be transmitted via a dedicated interface or via a standard interface, for example a field bus interface.

The control device preferably comprises a computing device for processing logic signals which may become necessary for operating the power semiconductors and/or for implementing programs suitable for operating the power components, such as the implementation of life monitoring. In this case, the voltage, such as the forward voltage and the current, can be taken into account and compared with a reference value on the basis of the temperature occurring in the power semiconductor during operation of the power semiconductor. Reference values which are predefined or determined on the new power semiconductor, for example, with values of the tolerance band, can be considered as reference values.

The result of the operating mode can be processed further by the process control using the aforementioned status signals. In particular, measures for ensuring continued and safe operation of the device can be introduced early by means of the life monitoring.

Preferably, in particular also for the purpose of the aforementioned monitoring of the service life, the control device and/or the power component comprise a detection means for detecting and/or monitoring measured values, in particular values which are dependent on the semiconductor temperature and/or the semiconductor current and/or the semiconductor forward voltage and/or the semiconductor input voltage.

In addition, the aforementioned measures are preferably extended in that the short-circuit monitoring and/or the undervoltage monitoring for the voltage supply and/or the control pulse generator are/is comprised by the control device and/or the power component. Depending on the application, it may also be provided that an external voltage, such as a transformer voltage and/or a rectifier voltage and/or an intermediate circuit voltage, is additionally monitored and/or evaluated. In addition to monitoring the power semiconductors or the power components themselves, it should therefore also be possible to easily monitor external application components with the aid of the control device in addition to the power components. Application components are understood to be application-specific components, for example welding transformers in resistance welding applications.

Particularly preferably, the avalanche monitoring is also comprised by the control device. The avalanche monitoring can be used to switch on the power semiconductor before the avalanche energy exceeds a predetermined standard value. The avalanche behavior controlled in this way can protect the power semiconductors against damage due to overvoltage, in particular when high currents and short transition times occur.

All these measures serve to ensure a smooth operation of the power component according to the invention, either by means of a superordinate process monitoring or by means of the control device itself.

It is further preferred that the control device or the power component comprises a field bus interface for connecting the same to an industrial field bus or that the control device or the power component is adapted to establish a communication connection with a higher-level further device (for example a process control device) by means of a field bus.

The aforementioned status signals and the comparison and monitoring results can therefore also be transmitted to the external device by means of the field bus. It is also possible to connect components to be monitored additionally to the control unit. With the aid of the field bus interface, it is also possible, for example, to read out and process actual values, such as voltage, current, temperature and all other values that can be detected technically in the power component or on the power semiconductor, substantially in real time by higher-level devices (control devices, process control devices and the like). An industrial field bus is understood to be any device with which data can be exchanged between a plurality of bus participants in real time, for example, also on the basis of the ethernet standard. Wireless connections are also contemplated.

Particularly preferably, the control device is set up to control the plurality of power semiconductors independently of one another, in particular to control the first power semiconductor independently of the second power semiconductor or to control the second power semiconductor independently of the first power semiconductor. If a plurality of power semiconductors are present, the previously mentioned measured values relating to the other power semiconductors can also be read out, processed and taken into account when controlling the control inputs of each individual power semiconductor by means of the previously mentioned fieldbus interface, i.e. individually for each power semiconductor and independently of one another.

The control device can therefore also be set up to take into account the operating state of the second power semiconductor during the generation of the control pulses for controlling the first power semiconductor.

By means of these measures, operation should be possible without a superordinate control, which generally coordinates the operation of the power semiconductors. In this case, the control device now assumes coordination of the control pulses for the control input of the first power semiconductor as a function of the operating state of at least one further power semiconductor present. Thus, a completely autonomous operation of the power components is now possible without a superordinate control.

In particular in rectifier applications, the control device may comprise means for realizing a comparison of the transformer voltage and/or the rectifier voltage or the cut-off voltage, for example with a reference voltage or with a voltage between one another or with an additional voltage derived from said voltages.

Short circuits at the transformer or in the rectifier branch can thus be easily and quickly identified and reported to the superordinate device, for example by means of the previously mentioned status outputs and/or field bus connections. Alternatively, the control device itself can introduce suitable measures, such as the switching off of a defective power semiconductor or rectifier branch.

For application, resistance welding, the forward voltage or on-time of a power semiconductor (e.g. MOSFET) can be detected. An inference about the status of the soldering tweezers should therefore be possible at any time (tweezers: open/closed or contact: yes/no).

Advantageously, the dedicated data may also be saved in a memory comprised by the control device or by the power component. In the aforementioned application, data which are relevant for the welding process or data of the welding tongs can be saved or made available in a memory, for example. It should also be possible to store the data of the power components themselves in an integrated memory, so that the power components can be easily identified by higher-level devices by reading out the data. An electronic type tag should therefore also be realizable for the device.

Preferably, the transformer is provided with a rectifier as described before, wherein the rectifier is connected to the secondary winding of the transformer and is comprised by or arranged on the transformer.

The apparatus offers the advantage, for example, in an electric resistance welding application that the welding transformer for electric resistance welding already comprises an intelligent rectifier and can be provided as an installation package of an electric resistance welding installation. Similar installation packs with or without transformers are suitable for other fields of application, such as servo motors or power modules for electric vehicles.

The power supply module operates as an inverter or converter and can comprise power components according to the patent claims for generating an intermediate circuit direct voltage, which can then be inverted.

A complete drive with a regulating device and a power supply module can also be realized with the aid of the solution according to the invention. The solution according to the invention is also conceivable for operating a machine for manufacturing or processing products.

Drawings

Fig. 1 schematically shows a first embodiment.

Fig. 2 schematically shows another embodiment.

Fig. 3 shows functional blocks of the first control device.

Fig. 4 shows functional blocks of the second control device.

Fig. 5 shows a power module application.

FIG. 6 illustrates an electrical resistance welding application.

Detailed Description

Fig. 1 shows a resistively welded diode with a plurality of semiconductors 8. The aforementioned resistance welded diode comprises a component carrier 9 in the form of a circuit board between the two boards 1, 2. The semiconductors 8 each have a metal housing 7, which is connected to a current input of the semiconductor 8. A housing 7 is preferably used which protects the semiconductor 8 on at least one side. The opposite current output 14 of the semiconductor 8 is freely accessible without the housing 7. The control terminal 6 is also shown. However, it is also conceivable for the semiconductor 8 to have no housing 7 of its own. It is important that these semiconductors 8 have a large area of current input and/or current output in order to reduce losses and power density. Additionally, these semiconductors 8 must be suitable for transmitting large currents in the kA range. A copper plate 1 is provided as an electrically conductive current input plate 1 and a copper plate 2 is likewise provided as an electrically conductive current output plate 2. Alternatively, molybdenum is also contemplated. The material chosen should have good electrical and thermal conductivity and thermal expansion similar to that of silicon. The thickness of the plates 1, 2 may for example lie in the millimeter range (e.g. 2 mm). In the exemplary embodiment shown here, the current inputs of a plurality of MOSFET components 8 are connected to current input plate 1 and the current outputs of components 8 are connected to current output plate 2. The two copper plates 1, 2 are aligned parallel to each other and at a small distance. The device becomes compact. The current input is directly electrically connected to the current input plate 1 by soldering or sintering. For this purpose, solder 15 or a sintering paste 15 is applied in a planar manner to the current input of the semiconductor housing 7. The inner surface of current input plate 1 facing the outside of semiconductor housing 7 is provided with a lacquer 10, which repels solder 15 or sinter 15, except for the contact points for semiconductor housing 7. The current output is electrically conductively connected to the current output plate 2 indirectly by means of an electrical connecting agent 14 (via — vertical through-hole contact through the circuit board 9) by means of soldering and/or sintering and/or copper bumps (not shown), which may be a component of the current output plate 2. The lacquer 10 can also be provided here. The grid 6 of the component 8 is accessible between the plates 1, 2, so that the grid can be controlled by means of a control device. A connection mechanism (not shown) for the control device can be arranged on the component carrier 9 and be completely or partially enclosed by the plates 1, 2. The connection enables the integration of the control device into the power component. Alternatively or additionally, the connection means may also provide a connection scheme to a non-integrated or only partially integrated control device on the power component, for example by means of a field bus.

The control device can preferably control the control inputs of all semiconductors 8 jointly or separately by means of a driver (not shown). The control device is also able to control the individual semiconductors 8 depending on the state of the further semiconductors 8.

The copper plates 1, 2, which are arranged parallel to one another and flush with one another in their edge regions, are connected to one another at least in their edge regions by means of a non-conductive plate connecting agent 3, so that the copper plates 1, 2 and the connecting agent 3 form a housing for a

component

6, 7, 8, 9 arranged between the plates 1, 2. The connecting means 3 can be a casting, but it can alternatively also be realized by means of a plastic, for example a hard plastic or a soft plastic. The advantage is the mechanical strength of the device that can be achieved thereby and the resulting better protection of the connection points 14, 15 and the semiconductor 8 with improved heat conduction at reduced thermal expansion.

By means of the connecting agent 3, a device can be realized which, depending on the application, also satisfies the IP protection required for the application. According to the detail section of fig. 1 (see bottom left), form-fittingly interlocking contact points can be provided at the edges of the copper plates 1, 2 and at the connecting agent 3, said contact points ensuring a firm contact between the connecting agent 3 and the plates 1, 2. The large-area casting of the two plates becomes superfluous and the production is simplified by few assembly steps.

The current 16 occurring during operation of the device can be controlled via the control terminal 6 and in a predetermined direction from the current input plate 1 to the current output plate 2. While the heat 5 generated by the semiconductor 6 during operation can be transported away from the current input plate 1 and the current output plate 2 and thus from the semiconductor 8 itself in both directions. This behavior should be indicated by means of the arrow 5 shown in the figure. This behavior is particularly advantageous in resistance welding, where very high currents are used and accordingly the dissipated heat has to be dissipated to a large extent.

Four semiconductors 8 are shown in the figure. The current input terminals of these semiconductors are connected to each other by means of a copper plate 1. Likewise, the current outputs are connected to each other by means of the VIAS 14 and/or by means of copper bumps (not shown) comprised by the copper plate 2, in case a copper plate 2 is used.

Fig. 2 discloses a similar arrangement as already shown in fig. 1. The same reference numerals indicate the same features unless otherwise derived from the description and/or drawings. The main difference from fig. 1 is that the current input (for example the upper or lower side of the semiconductor 8) and the current output (for example the upper or lower side of the semiconductor 8) are directly connected to the copper plates 1, 2 by means of soldering or sintering (here no VIAS, housings or the like). The control terminals 6 are arranged accessible by means of conductor lines, for example, on a film or a hard carrier 9 and can be controlled by means of a control device 17. Another difference to fig. 1 is that the two copper slabs 1, 2 are each connected to an additional copper slab 11 which is penetrated by a cooling duct 18. These copper plates 11 can also be used in the solution known from fig. 1. It is also possible for only one copper plate 11 to be arranged on the current input plate 1 or on the current output plate 2. In principle, it is also possible to use the current input plate 1 and/or the current output plate 2 with integrated cooling lines 18 in both variants (fig. 1 and 2), so that a separate additional cooling plate 11 is omitted. The possible solutions depend above all on the power requirements of the application.

In the edge region on the right in the figure, the circuit board section 12 projects from the device by means of a recess in the connecting agent 3 (not shown). The circuit board section 12 can also be realized by means of a second circuit board (not shown), which can be mechanically and/or electrically connected to the first circuit board 9 by means of a plug connection 13. The circuit board 12 protruding from the device comprises a control device 17 for controlling the semiconductor 8 in parallel between the boards 1, 2. The entire device is at least partially enclosed around the linker 3. The device is cast in the region of the recess, so that the casting compound together with the surrounding connecting agent forms a closure of the device against external adverse effects. The control device 17 can also be mounted on the first printed circuit board 9 using suitable small components, so that it is also completely surrounded by the boards 1, 2 and the connecting agent 3. This solution is recommended in the case of mass production of the device. Alternatively or additionally, suitable mechanical and/or electrical interfaces can be provided for the field bus, for example.

Here, too, a circuit board 9 that is as thin as possible is recommended, so that the mechanical properties for carrying the semiconductor and for stabilizing the device are just sufficient, heat dissipation is optimal and mechanical stresses in the board 9 occur to a minimum when heating.

Fig. 3 shows a functional block diagram of a control device according to the invention for a rectifier circuit (for example, reference numeral 17 in fig. 2) in a roughly schematic manner. The control device may itself comprise a voltage supply 313. The voltage supply 313 ensures that all or individual components of the power component are supplied with power from the transformer voltage, for example by means of a DC/DC converter 316 for generating potential-separated direct voltages for the functions of the power semiconductors and/or by means of a transformer auxiliary winding 315 and/or by means of a bootstrap circuit 314.

The control device comprises as a central functional unit a control pulse generator 319, which can be supplied with power by means of the previously explained voltage supply 313. The control pulses may preferably be forwarded to a driver component 32, which may control the control inputs of the

power semiconductors

31a, 31b of the half bridge, which is shown here only by way of example. The arrangement is not limited to controlling only two

power semiconductors

31a, 31 b.

The control device can also be set up to output a status signal of the operating status of the power semiconductor by means of the status signaling device 318. Additionally a computing device 33 for processing the logic signals and/or for enabling lifetime monitoring of the power semiconductors may be included.

Detection means 36 for detecting and/or for monitoring measured values, in particular for detecting temperatures, voltages on components, transformers and/or rectifiers and/or semiconductors or for detecting currents on or in the component being built, can likewise be included. In summary, the detection means 36 should ensure the detection of all conceivable and measurement-technically detectable actual values that can occur during the operation of the power component. Additionally, a short circuit monitoring and/or an undervoltage monitoring 38 for the voltage supply 313 and/or the control pulse generator 319 may be provided. Avalanche monitoring 39 and a second additional temperature monitoring 310 can also be provided.

By means of these measures, an intensive monitoring of the internal operation of the power component can be achieved. The power component can communicate its own operating state in real time to the superordinate position or be ready for a call, for example, within the scope of a state monitoring which is carried out in a dedicated manner by means of the control device. The function block 317 for error generation or error signal generation can be meaningfully supplemented with the monitoring mentioned above. The cooling medium may be monitored and the function of the temperature switch may be implemented based on the monitoring.

Furthermore, a functional block 37 is shown, which enables the identification of the power component, as well as a functional block 312 for providing or storing specific data, for example soldering tweezers data, and a functional block 311 for providing or storing specific data, for example soldering data, such as soldering process data. Functionality may also be included to enable purposeful querying of such data.

The monitoring results are facilitated by the communication of the fieldbus interface 34, which is separate or comprised by the power unit or the control unit, for connecting the control unit or the power unit to the industrial fieldbus. Preferably, the fieldbus interface 34 is based on an ethernet standard, such as the SERCOS fieldbus or on a wireless fieldbus standard. By means of the connection 35, the power components or the control devices can be connected to the superordinate control unit by means of the field bus interface 34. Process data (identification data, temperature, current actual value, voltage actual value and the like) or the aforementioned aggregated data and/or data of a plurality of power semiconductors can be transmitted or recalled without high wiring expenditure.

The control device can also be set up to optionally take into account the operating state of the other power semiconductors 321 when controlling the first power semiconductors 31a and/or 31 b. The control device can be set up to control the control terminals of the plurality of

power semiconductors

321, 31a, 31b independently of one another and preferably to introduce 320 a temperature-dependent switching process. The control device is suitable in particular for implementing all types of converters, in particular converters based on full bridge circuits, half bridge circuits or midpoint circuits.

The functional blocks shown in the figures may be included, completely or partially or in any combination, depending on the application, by the power components and/or the control device, for example also in the form of programs which can be run on the computing device. Some functional blocks, such as the driver 32 and/or the voltage supply 313 or the field bus interface 34, can also be implemented as additional external components for controlling the device. Preferably, however, all of the components described herein are included in an integrated circuit representing a control device.

The integrated circuit with/without external wiring is preferably arranged on the component carrier 9 shown in fig. 1 and 2 and is preferably arranged between the boards 1, 2.

Fig. 4 shows a schematic overview of the functional blocks of a control device according to the invention, which is modified for controlling an inverter. The associated inverter is shown in fig. 5. The functional blocks shown here have the same reference numerals as the functional blocks illustrated in fig. 3. Reference is made to the description thereof in the context of fig. 3. Reference numerals 51a to 51f are illustrated in fig. 5.

Fig. 5 shows a section in a power module of a three-phase current servo motor 524 preferably with position detection (not shown). The power semiconductors used in the three illustrated half-bridges 51a, d and 51b, e and 51c, f can be realized by means of the power component according to the invention according to fig. 1 and 2 in a corresponding manner. The half bridge may be connected to a dc voltage intermediate circuit (+/-).

Fig. 6 shows an electric resistance welding installation as an application example, comprising a welding control device 60, a welding jaw 61 with a welding transformer 62 and a rectifier 63. The rectifier 63 and the transformer 62 form a compact and separate unit from the clamp 61, since the rectifier 63 may already be arranged on the transformer 62 before being mounted on the clamp 61, the transformer 62 or the rectifier 63 comprises the solution according to the invention as required and is connected here to the fusion welding control apparatus 60 by means of a wired ethernet connection 64 via the SERCOS III protocol. Wireless solutions should be equally conceivable.

All the features shown in fig. 1 to 6 can also be combined by the person skilled in the art in a variant for implementing alternative embodiments. Alternative embodiments may also comprise additional features mentioned in the description, which features are not shown or mentioned in the description of the figures. The application examples shown here should not limit the application scenarios achievable with the present invention. For example, the power component according to the invention can be integrated into very different rectifier applications and electronic circuits (half-bridge, full-bridge, midpoint circuits).

Claims

1. Power component for controlling a high current (16) in the kA range, comprising a plurality of power semiconductors (8) each having a current input, a current output and a control terminal (6), comprising an electrically conductive current input plate (1) and comprising an electrically conductive current output plate (2), wherein the current input plate (1) and the current output plate (2) are connected in their edge regions by means of an electrically non-conductive connecting agent, such that the plates and the connecting agent form a housing, wherein the current input of the power semiconductor (8) is connected to the current input plate (1) and the current output of the power semiconductor (8) is connected to the current output plate (2), wherein the control terminal (6) is arranged between the current input plate (1) and the current output plate (2) and wherein a connection for a control device (17) is comprised, by means of which the control terminal (6) can be controlled, wherein the connection means enable the integration of the control device into the power component and/or the connection of the control device (17) to the power component.

2. The power component of claim 1, wherein a control device (17) is connected by means of a connection mechanism, the control device comprising a control pulse generator (319).

3. The power component according to claim 2, wherein the control device comprises a voltage supply (313, 314, 315, 316) or is connected to such a voltage supply, wherein the voltage supply (313, 314, 315, 316) is also set up for supplying a control pulse generator (319).

4. The power component as claimed in claim 2, wherein the control device (17) or the power component is set up for outputting a status signal of the operating state of the power component or of the power semiconductor (8) or of the control device (17).

5. Power component according to one of claims 2 to 4, wherein the control device (17) comprises a computing device (33) for processing logic signals and/or for running a program.

6. The power component of claim 5, wherein the program comprises a status monitoring or a lifetime monitoring of a power semiconductor.

7. Power component according to one of claims 2 to 4, wherein the control device (17) comprises a detection means (36) for detecting and/or monitoring the measured values.

8. Power component according to one of claims 2 to 4, wherein the control device (17) comprises a detection means (36) for detecting and/or monitoring measured values relating to the temperature and/or the current and/or the voltage on or in the power semiconductor (8) or the power component or on other components comprised by the power component.

9. The power component of one of claims 2 to 4, wherein the control device (17) comprises a short circuit monitoring and/or an under voltage monitoring (38).

10. The power block according to one of claims 2 to 4, wherein the control device (17) comprises an avalanche monitoring (39).

11. Power component according to one of claims 2 to 4, wherein the control device (17) or the power component is provided with a fieldbus interface (34) for connecting the control device (17) or the power component to an industrial fieldbus.

12. The power component of claim 11, wherein the industrial fieldbus is a fieldbus based on an ethernet standard.

13. The power component of claim 12, wherein the ethernet standard based fieldbus is a SERCOS fieldbus or a wireless fieldbus.

14. The power component as claimed in one of claims 1 to 4, wherein the control device (17) is set up for controlling the control terminals of the plurality of power semiconductors (8) independently of one another.

15. The power component according to one of claims 1 to 4, wherein the control device (17) is set up for taking into account the operating state of the second power semiconductor (8) when controlling the first power semiconductor (8).

16. Current transformer comprising a power component according to one of the preceding claims.

17. The converter of claim 16, wherein the converter is a rectifier.

18. Transformer with a current transformer according to claim 16 or 17, wherein the current transformer is connected to the secondary winding of the transformer.

19. The transformer of claim 18, wherein the transformer is a fusion welding transformer for resistance welding.

20. Apparatus comprising a transformer according to claim 18 or 19 and/or a converter according to claim 16 or 17.

21. The apparatus of claim 20, wherein the apparatus is an automated component, a machine, a vehicle, an electric resistance welding apparatus, or a power module for a servo motor.

22. The apparatus of claim 21, wherein the vehicle is an electric vehicle.