CN105742386B - Photodiode and preparation method thereof, X-ray detection substrate and preparation method thereof - Google Patents
Photodiode and preparation method thereof, X-ray detection substrate and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14659—Direct radiation imagers structures
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
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Abstract
The invention discloses a kind of photodiode and preparation method thereof, X-ray detection substrate and preparation method thereof, the photodiode includes：Underlay substrate, and intrinsic layer, the first doped layer and the second doped layer on underlay substrate；Orthographic projection of the upper surface of intrinsic layer on underlay substrate is located at the lower surface of intrinsic layer in the orthographic projection region on underlay substrate；First doped layer and the second doped layer are respectively on the inclined side surface of relative two of intrinsic layer.Above-mentioned photoelectric diode structure provided in an embodiment of the present invention, because the first doped layer and the second doped layer are located on two inclined side surfaces of intrinsic layer respectively, it can be doped in manufacture craft by the way of ion implanting, it so can accurately control doping concentration, realize effective control to photodiode performance, and the effective area of shining light of photodiode can be increased by being set to inclined side surface, and the photo-generated carrier of collection is more, and the signal intensity of generation is big.
Description
Technical field
The present invention relates to display technology field, espespecially a kind of photodiode and preparation method thereof, X-ray detection substrate and
Its preparation method.
Background technology
X-ray detection is widely used in the fields such as medical treatment, safety, Non-Destructive Testing, scientific research, is increasingly played in national economy
Important function.At present, in actual use, X-ray detection generally uses film camera method.The imaging of X-ray film photograph
Quality is higher, can correctly provide the authentic communication of test specimen figure and features and defect truth, still, and there is operating process to answer for it
Miscellaneous, operating cost is high, result is not easy to maintain and it is inconvenient to carry to inquire about and comments the piece personnel eyes to be easily by the shortcomings of strong light injury
Solve the above problems, late 1990s occur in that X-ray Digital photographic (DigitaI Radiography, DR) is detected
Technology.Flat panel detector (flat panel detector) is used in X-ray digital camera system, its pixel dimension can be small
In 0.1mm, thus its image quality and resolution ratio can almost match in excellence or beauty with film camera, be showed while also overcoming in film camera
Shortcoming out, also the computer disposal for image, which is provided, facilitates.Because electronic switched mode is different, Digitized X-ray shines
Mutually detection can be divided into direct conversion hysteria (Direct DR) and the direct transformant X-rays of indirect conversion type (Indirect DR) are flat
Partitioned detector is made up of ray receiver, command processor and power supply.Include scintillation crystal screen (Gd in ray receiver2O2S
Or CsI), large area amorphous silicon sensor array and reading circuit etc..Wherein, scintillation crystal screen is used for turning x-ray photon
Change visible ray into, the visible ray on screen is converted into electronics by the large-scale integrated amorphous silicon detector array being close to it, then
Digitized by reading circuit, be sent in computer and form displayable digital picture.
Indirect conversion type detector stores base by x-ray conversion layer and amorphous silicon photodiodes, thin film transistor (TFT), signal
The composition such as this pixel cell and signal amplification and signal-obtaining.The structure of indirect plat panel detector is mainly by scintillator (iodate
Caesium) or fluorophor (gadolinium oxysulfide) layer add with photodiode act on amorphous silicon layer, then add tft array constitute.Such
X-ray can be converted to electric signal by flat panel detector scintillator or luminescent coating after X-ray exposure, pass through thin film transistor (TFT)
The charge signal of each pixel is read and be converted into data signal and be sent to Computerized image processing system by array is integrated into X
Ray image.
PIN photodiode is the crucial composition of indirect-type X-ray detection substrate, which determines the absorption effect of visible ray
Rate, has a significant impact for key indexs such as x-ray dose, the resolution ratio of x-ray imaging, the response speeds of image.Indirect-type X
The PIN of X-ray detection X substrate process of preparing mainly uses PECVD technique, by different process gas (such as：SiH4、
NH3、N2O、PH3、H2、B2H6Deng) PIN devices can be conveniently formed simultaneously, but its shortcoming, which is doping concentration, relatively fixes,
Can not accurately it control, it is impossible to realize the doping of special area.
Therefore, a kind of new PIN photodiode structure how is designed, doping concentration can be accurately controlled, be this area
Technical staff's technical problem urgently to be resolved hurrily.
The content of the invention
In view of this, the embodiment of the present invention provide a kind of photodiode and preparation method thereof, X-ray detection substrate and its
Preparation method, can accurately control doping concentration.
Therefore, the embodiments of the invention provide a kind of PIN photodiode, including：Underlay substrate, and positioned at the lining
Intrinsic layer, the first doped layer and the second doped layer on substrate；
Orthographic projection of the upper surface of the intrinsic layer on the underlay substrate is located at the lower surface of the intrinsic layer in institute
State in the orthographic projection region on underlay substrate；
First doped layer and the second doped layer are located at the inclined side surface of relative two of the intrinsic layer respectively
On.
In a kind of possible implementation, in above-mentioned PIN photodiode provided in an embodiment of the present invention, described
It is isosceles trapezoidal structure that layer, which is levied, in the section perpendicular to the underlay substrate.
In a kind of possible implementation, in above-mentioned PIN photodiode provided in an embodiment of the present invention, also wrap
Include：First transparency electrode layer on first doped layer；
And the second transparency electrode layer on second doped layer.
In a kind of possible implementation, in above-mentioned PIN photodiode provided in an embodiment of the present invention, described
One doped layer is p type semiconductor layer, and second doped layer is n type semiconductor layer；Or
First doped layer is n type semiconductor layer, and second doped layer is p type semiconductor layer.
The embodiment of the present invention additionally provides a kind of X-ray detection substrate, including：Thin film transistor (TFT) and PIN photodiode；
Wherein,
The PIN photodiode is above-mentioned PIN photodiode provided in an embodiment of the present invention.
It is described thin in above-mentioned X-ray detection substrate provided in an embodiment of the present invention in a kind of possible implementation
Film transistor is top gate type thin film transistor；
The drain electrode of the top gate type thin film transistor is electrically connected with the first transparency electrode layer of the PIN photodiode.
In a kind of possible implementation, in above-mentioned X-ray detection substrate provided in an embodiment of the present invention, also wrap
Include：
The first protective layer positioned at the top of the PIN photodiode；
The moon electrically connected by the via of first protective layer with the second transparency electrode layer of the PIN photodiode
Pole.
In a kind of possible implementation, in above-mentioned X-ray detection substrate provided in an embodiment of the present invention, the top
The source electrode of gate type thin film transistor, drain electrode are set with the negative electrode with layer.
In a kind of possible implementation, in above-mentioned X-ray detection substrate provided in an embodiment of the present invention, also wrap
Include：
Positioned at the lower section of the thin film transistor (TFT) and PIN photodiode and positioned at the second of the top of the underlay substrate
Protective layer.
In a kind of possible implementation, in above-mentioned X-ray detection substrate provided in an embodiment of the present invention, also wrap
Include：
Positioned at the top of the thin film transistor (TFT) and PIN photodiode and the resin-encapsulated layer being stacked and flicker
Layer.
The embodiment of the present invention additionally provides a kind of making side of above-mentioned PIN photodiode provided in an embodiment of the present invention
Method, including：
The figure of intrinsic layer is formed on underlay substrate；Positive throwing of the upper surface of the intrinsic layer on the underlay substrate
Shadow is located at the lower surface of the intrinsic layer in the orthographic projection region on the underlay substrate；
First is formed by patterning processes and ion implantation technology on an inclined side surface of the intrinsic layer to mix
The figure of diamicton；
It is relative with being formed with first doped layer in the intrinsic layer by patterning processes and ion implantation technology
The figure of the second doped layer is formed on another inclined side surface；
First doped layer and the second doped layer are carried out by high-temperature activation technique ion-activated.
In a kind of possible implementation, the preparation method of above-mentioned PIN photodiode provided in an embodiment of the present invention
In, after ion-activated to first doped layer and the progress of the second doped layer, in addition to：
The figure of first transparency electrode layer is formed on first doped layer by a patterning processes, and described
The figure of second transparency electrode layer is formed on second doped layer.
The embodiment of the present invention additionally provides a kind of making side of above-mentioned X-ray detection substrate provided in an embodiment of the present invention
Method, including：
The figure of intrinsic layer is formed on underlay substrate；Positive throwing of the upper surface of the intrinsic layer on the underlay substrate
Shadow is located at the lower surface of the intrinsic layer in the orthographic projection region on the underlay substrate；
First is formed by patterning processes and ion implantation technology on an inclined side surface of the intrinsic layer to mix
The figure of diamicton；
It is relative with being formed with first doped layer in the intrinsic layer by patterning processes and ion implantation technology
The figure of the second doped layer is formed on another inclined side surface；
First doped layer and the second doped layer are carried out by high-temperature activation technique ion-activated；
The figure of thin film transistor (TFT) is formed on the underlay substrate.
In a kind of possible implementation, the preparation method of above-mentioned X-ray detection substrate provided in an embodiment of the present invention
In, after ion-activated to first doped layer and the progress of the second doped layer, before the figure of thin film transistor (TFT) is formed,
Also include：
The figure of first transparency electrode layer is formed on the first doped layer by a patterning processes, and in the second doping
The figure of second transparency electrode layer is formed on layer.
In a kind of possible implementation, the preparation method of above-mentioned X-ray detection substrate provided in an embodiment of the present invention
In, after the first transparency electrode layer and second transparency electrode layer pattern is formed, in addition to：
The figure of the first protective layer is formed on the underlay substrate.
In a kind of possible implementation, the preparation method of above-mentioned X-ray detection substrate provided in an embodiment of the present invention
In, the figure of thin film transistor (TFT) is formed on the underlay substrate, is specifically included：
It is being formed with the figure for the active layer that thin film transistor (TFT) is formed on the underlay substrate of the first protection layer pattern；
By a patterning processes be formed with the underlay substrate of the active layer pattern formed source electrode, drain electrode and
The figure of the negative electrode electrically connected by the via of first protective layer with second transparency electrode layer；
The figure of gate insulator, grid is sequentially formed on the underlay substrate for being formed with the source electrode and drain patterns.
In a kind of possible implementation, the preparation method of above-mentioned X-ray detection substrate provided in an embodiment of the present invention
In, formed on underlay substrate before the figure of intrinsic layer, in addition to：
The figure of the second protective layer is formed on underlay substrate.
In a kind of possible implementation, the preparation method of above-mentioned X-ray detection substrate provided in an embodiment of the present invention
In, after gate patterns are formed, in addition to：
The figure of resin-encapsulated layer and flash layer is sequentially formed on the underlay substrate.
The beneficial effect of the embodiment of the present invention includes：
A kind of photodiode provided in an embodiment of the present invention and preparation method thereof, X-ray detection substrate and its making side
Method, the photodiode includes：Underlay substrate, and intrinsic layer, the first doped layer and the second doping on underlay substrate
Layer；Orthographic projection of the upper surface of intrinsic layer on underlay substrate is located at orthographic projection institute of the lower surface of intrinsic layer on underlay substrate
In region；First doped layer and the second doped layer are respectively on the inclined side surface of relative two of intrinsic layer.This hair
The above-mentioned photoelectric diode structure that bright embodiment is provided, because the first doped layer and the second doped layer are located at the two of intrinsic layer respectively
It on individual inclined side surface, can be doped, so can be accurately controlled by the way of ion implanting in manufacture craft
Doping concentration, photoelectricity two can be increased by realizing effective control to photodiode performance, and being set to inclined side surface
The effective area of shining light of pole pipe, the photo-generated carrier of collection is more, and the signal intensity of generation is big.
Brief description of the drawings
Fig. 1 is one of structural representation of PIN photodiode provided in an embodiment of the present invention；
Fig. 2 is the two of the structural representation of PIN photodiode provided in an embodiment of the present invention；
Fig. 3 is the preparation method flow chart of PIN photodiode provided in an embodiment of the present invention；
Fig. 4 is one of structural representation of X-ray detection substrate provided in an embodiment of the present invention；
Fig. 5 is the two of the structural representation of X-ray detection substrate provided in an embodiment of the present invention；
Fig. 6 is one of preparation method flow chart of X-ray detection substrate provided in an embodiment of the present invention；
Fig. 7 is the two of the preparation method flow chart of X-ray detection substrate provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawings, to photodiode provided in an embodiment of the present invention and preparation method thereof, X-ray detection substrate
And preparation method thereof embodiment be described in detail.
Wherein, the thickness and shape of each film layer do not reflect the true of PIN photodiode and X-ray detection substrate in accompanying drawing
Ratio, purpose is schematically illustrate present invention.
The embodiments of the invention provide a kind of PIN photodiode, as shown in figure 1, including：Underlay substrate 10, Yi Jiwei
In the intrinsic layer 11 on underlay substrate 10, the first doped layer 12 and the second doped layer 13；
Orthographic projection of the upper surface of intrinsic layer 11 on underlay substrate 10 is located at the lower surface of intrinsic layer 11 in underlay substrate
In orthographic projection region on 10；
First doped layer 12 and the second doped layer 13 are respectively on the inclined side surface of relative two of intrinsic layer 11.
In above-mentioned PIN photodiode provided in an embodiment of the present invention, due to set in PIN photodiode first
Doped layer and the second doped layer are located on the inclined side surface of relative two of intrinsic layer respectively, in the first doped layer and second
It can be doped in the manufacture craft of doped layer by the way of ion implanting, so can accurately control doping concentration, it is real
Now to effective control of photodiode performance, and be set to inclined side surface can increase photodiode it is effective by
Light area, the photo-generated carrier of collection is more, and the signal intensity of generation is big.
In the specific implementation, in above-mentioned PIN photodiode provided in an embodiment of the present invention, as shown in figure 1, intrinsic layer
11 could be arranged to isosceles trapezoidal structure in the section perpendicular to underlay substrate 10, and the first doped layer and second can so mixed
The size of diamicton is identical, and then ensures the performance of photodiode.It should be noted that the thickness of intrinsic layer could be arranged toExtremelyFor intrinsic layer thickness can be according to actual conditions depending on, do not limit herein.
Further, in the specific implementation, in above-mentioned PIN photodiode provided in an embodiment of the present invention, such as Fig. 2 institutes
Show, the PIN photodiode can also include：First transparency electrode layer 14 on the first doped layer 12；And positioned at
Second transparency electrode layer 15 on two doped layers 13.That is, being arranged in the transparent electrode layer that PIN photodiode is set
Two parts, in order to which in applied to X-ray detection substrate, a portion can be electrically connected with negative electrode, and another part can
To be electrically connected with the drain electrode in thin film transistor (TFT), structure is set more to simplify.It should be noted that first transparency electrode layer and the
The material of two transparent electrode layers could be arranged to tin indium oxide (ITO), indium zinc oxide (IZO), graphene, nano-silver thread, oxidation
One of zinc (ZnO) or combination.Can be according to actual feelings for the material of first transparency electrode layer and second transparency electrode layer
Depending on condition, do not limit herein.
In the specific implementation, in above-mentioned PIN photodiode provided in an embodiment of the present invention, the first doped layer can be set
When being set to p type semiconductor layer, then the second doped layer is then n type semiconductor layer；Or first doped layer could be arranged to N-type and partly lead
Body layer, then the second doped layer is then p type semiconductor layer.Species for the first doped layer and the second doped layer can be according to reality
Depending on the situation of border, do not limit herein.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of above-mentioned PIN light provided in an embodiment of the present invention
The preparation method of electric diode, because the principle that this method solves problem is similar to a kind of foregoing PIN photodiode, therefore should
The implementation of method may refer to the implementation of PIN photodiode, repeats part and repeats no more.
In the specific implementation, the preparation method of PIN photodiode provided in an embodiment of the present invention, as shown in figure 3, specifically
Comprise the following steps：
S301, on underlay substrate formed intrinsic layer figure；Orthographic projection of the upper surface of intrinsic layer on underlay substrate
Lower surface positioned at intrinsic layer is in orthographic projection region on underlay substrate；
S302, form first on an inclined side surface of intrinsic layer by patterning processes and ion implantation technology and mix
The figure of diamicton；
S303, by patterning processes and ion implantation technology in the relative with being formed with the first doped layer another of intrinsic layer
The figure of the second doped layer is formed on individual inclined side surface；
S304, by high-temperature activation technique the first doped layer and the second doped layer are carried out it is ion-activated.
In the manufacture craft of above-mentioned PIN photodiode provided in an embodiment of the present invention, due to that can be noted using ion
Enter to be pointed to the first doped layer and the second doped layer on two inclined side surfaces of intrinsic layer to be doped, so can be accurate
Doping concentration is controlled, effective control to photodiode performance is realized.It should be noted that, when performing step S302, that is, exist
During forming the first doping layer pattern, patterning processes specifically refer to coat one layer of photoresist on the surface of intrinsic layer, pass through
Exposure, developing process, the photoresist in the region of the to be formed first doping layer pattern is got rid of, ion implanting work is carried out afterwards
Skill, finally carries out the stripping of photoresist；Similarly, when performing step S303, i.e., during the second doping layer pattern is formed,
Patterning processes are specifically referred to coat one layer of photoresist on the surface of intrinsic layer, and by exposure, developing process, to be formed second is mixed
The photoresist in the region of diamicton figure is got rid of, and ion implantation technology is carried out afterwards, finally carries out the stripping of photoresist.
In the specific implementation, in the preparation method of above-mentioned PIN photodiode provided in an embodiment of the present invention, step
S304 can also include after ion-activated to the first doped layer and the progress of the second doped layer：
The figure of first transparency electrode layer is formed on the first doped layer by a patterning processes, and in the second doping
The figure of second transparency electrode layer is formed on layer.
The making side of PIN photodiode provided in an embodiment of the present invention is described in detail with a specific example below
Method, makes comprising the following steps that for PIN photodiode：
Step 1: forming the figure of intrinsic layer on underlay substrate；
In the specific implementation, one layer of α-Si is deposited on underlay substrate:H films, the α-Si:The thickness range of H films can
To be arranged onBy gluing, exposure, development, dry and etch afterwards and realize α-Si:The figure of H intrinsic layers
Change and stripping photoresist；Now, the α-Si of formation:Orthographic projection of the upper surface of the intrinsic layer patterns of H on underlay substrate be located at α-
Si:The lower surface of the intrinsic layer patterns of H is in the orthographic projection region on underlay substrate；
Step 2: forming first on an inclined side surface of intrinsic layer by patterning processes and ion implantation technology
The figure of doped layer；
In the specific implementation, one layer of photoresist is coated on the intrinsic layer pattern formed after step one, photoresist is carried out
Expose, develop, dry and etch afterwards, realize P+ α-Si:The doped layers of H first it is graphical；P is realized using ion implantation technology afterwards
+α-Si:The doping of the doped layers of H first；Finally the photoresist on intrinsic layer is peeled off；
Step 3: by patterning processes and ion implantation technology in the relative with being formed with the first doped layer another of intrinsic layer
The figure of the second doped layer is formed on one inclined side surface；
In the specific implementation, one layer of photoresist is coated on intrinsic layer pattern, photoresist is exposed, developed, is dried afterwards
And etch, realize N+ α-Si:The doped layers of H second it is graphical；N+ α-Si are realized using ion implantation technology afterwards:H second mixes
The doping of diamicton；Finally the photoresist on intrinsic layer is peeled off；
Step 4: being carried out by high-temperature activation technique to the first doped layer and the second doped layer ion-activated；
In the specific implementation, using high-temperature activation technique, such as quasi-molecule laser annealing (ELA), rapid thermal annealing
(RTA), the technique such as high temperature stove heat (OVEN), line activating is entered to the ion that the first doped layer and the second doped layer inject；
Step 5: the figure of first transparency electrode layer, Yi Ji are formed on the first doped layer by a patterning processes
The figure of second transparency electrode layer is formed on second doped layer；
In the specific implementation, after execution of step four, the first doped layer, the second doped layer, intrinsic layer figure are being formed with
One layer of electrode layer is deposited on the underlay substrate of shape, the material of the electrode layer could be arranged to tin indium oxide (ITO), indium zinc oxide
(IZO), one of graphene, nano-silver thread, zinc oxide (ZnO) or combination；Patterning processes are carried out to electrode layer, that is, led to
Gluing, exposure are crossed, development, dries and etches afterwards, the figure of first transparency electrode layer is formed on the first doped layer, and second
The figure of second transparency electrode layer is formed on doped layer.
So far, above-mentioned steps one to the step 5 provided by instantiation has been produced on provided in an embodiment of the present invention
State PIN photodiode.
The embodiments of the invention provide a kind of X-ray detection substrate, as shown in figure 4, including：Thin film transistor (TFT) (TFT) and
PIN photodiode；Wherein, PIN photodiode is the PIN photodiode of any of the above-described kind of mode.The X-ray detection base
The implementation of plate may refer to the embodiment of above-mentioned PIN photodiode, repeats part and repeats no more.
In above-mentioned X-ray detection substrate provided in an embodiment of the present invention, including thin film transistor (TFT) and any of the above-described kind of mode
PIN photodiode, the orthographic projection of the upper surface of the intrinsic layer in the PIN photodiode on underlay substrate is located at intrinsic
The lower surface of layer is in the orthographic projection region on underlay substrate；First doped layer and the second doped layer are located at intrinsic layer respectively
The inclined side surface of relative two on, in such manner, it is possible to accurately control doping concentration, reduce the exposure intensity of X-ray, realize
Effective control to photodiode performance, and be set to inclined side surface and can increase effective light of photodiode
Area, the photo-generated carrier of collection is more, and the signal intensity of generation is big.
In the specific implementation, in above-mentioned X-ray detection substrate provided in an embodiment of the present invention, as shown in figure 4, film is brilliant
Body pipe could be arranged to top gate type thin film transistor；And the drain electrode 21 of top gate type thin film transistor and PIN photodiode
First transparency electrode layer 14 is electrically connected, and such structure can cause the active layer 22 of thin film transistor (TFT) by thin film transistor (TFT)
The protection of grid 23, do not have light irradiation when X-ray detection substrate works to active layer, it is to avoid illumination is to active layer performance
Influence, i.e., effectively every light protect.
In the specific implementation, in above-mentioned X-ray detection substrate provided in an embodiment of the present invention, as shown in figure 4, the X is penetrated
Line detection substrate can also include：The first protective layer 24 positioned at the top of PIN photodiode；And pass through the first protective layer
The negative electrode 25 that 24 via is electrically connected with the second transparency electrode layer 15 of PIN photodiode.First protective layer can be avoided
Performance to the intrinsic layer of PIN photodiode in manufacture craft is impacted.
In the specific implementation, in above-mentioned X-ray detection substrate provided in an embodiment of the present invention, as shown in figure 4, can be by
The source electrode 26 of top gate type thin film transistor, drain electrode 21 are set with negative electrode 25 with layer, and source electrode, drain electrode and negative electrode are set with layer, this
Sample, extra preparation section need not be increased when preparing X-ray detection substrate, it is only necessary to can shape by a patterning processes
Into the figure of source electrode, drain electrode and negative electrode, preparation cost can be saved, simplifies manufacture craft, production efficiency is improved.
In the specific implementation, in above-mentioned X-ray detection substrate provided in an embodiment of the present invention, in order to improve film crystal
The contact performance of pipe and PIN photodiode respectively with underlay substrate, as shown in figure 5, the X-ray detection substrate can also be wrapped
Include：Positioned at the lower section of thin film transistor (TFT) and PIN photodiode and positioned at the second protective layer 27 of the top of underlay substrate 10.
In the specific implementation, in above-mentioned X-ray detection substrate provided in an embodiment of the present invention, as shown in Figure 4 and Figure 5,
The X-ray detection substrate can also include：Positioned at the top of thin film transistor (TFT) and PIN photodiode and the resin that is stacked
Encapsulated layer 28 and flash layer 29.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of above-mentioned X-ray provided in an embodiment of the present invention
The preparation method for detecting substrate, because the principle that this method solves problem is similar to a kind of foregoing X-ray detection substrate, therefore should
The implementation of method may refer to the implementation of X-ray detection substrate, repeats part and repeats no more.
In the specific implementation, the preparation method of X-ray detection substrate provided in an embodiment of the present invention, as shown in fig. 6, specifically
Comprise the following steps：
S601, on underlay substrate formed intrinsic layer figure；Orthographic projection of the upper surface of intrinsic layer on underlay substrate
Lower surface positioned at intrinsic layer is in orthographic projection region on underlay substrate；
S602, form first on an inclined side surface of intrinsic layer by patterning processes and ion implantation technology and mix
The figure of diamicton；
S603, by patterning processes and ion implantation technology in the relative with being formed with the first doped layer another of intrinsic layer
The figure of the second doped layer is formed on individual inclined side surface；
S604, by high-temperature activation technique the first doped layer and the second doped layer are carried out it is ion-activated；
S605, on underlay substrate formed thin film transistor (TFT) figure.
In the manufacture craft of above-mentioned X-ray detection substrate provided in an embodiment of the present invention, due to that can be noted using ion
Enter to be pointed to the first doped layer and the second doped layer on two inclined side surfaces of intrinsic layer to be doped, so can be accurate
Doping concentration is controlled, the exposure intensity of X-ray is reduced, effective control to photodiode performance is realized.It should be noted that
After execution of step S601 to S604, then the figure of step S605 formation thin film transistor (TFT)s is performed, high temperature work can be avoided
Influence of the skill to thin-film transistor performance, realizes that ion implantation technology applies the feasibility prepared in X-ray detection substrate.
In the specific implementation, in the preparation method of above-mentioned X-ray detection substrate provided in an embodiment of the present invention, step
S604 is after ion-activated to the first doped layer and the progress of the second doped layer, and step S605 is forming the figure of thin film transistor (TFT)
Before, as shown in fig. 7, can also include：
S606, the figure for forming on the first doped layer by a patterning processes first transparency electrode layer, and the
The figure of second transparency electrode layer is formed on two doped layers.
In the specific implementation, in the preparation method of above-mentioned X-ray detection substrate provided in an embodiment of the present invention, step
S606 is after first transparency electrode layer and second transparency electrode layer pattern is formed, as shown in fig. 7, can also include：
S607, the figure for forming on underlay substrate the first protective layer.
In the specific implementation, in the preparation method of above-mentioned X-ray detection substrate provided in an embodiment of the present invention, step
S605 forms the figure of thin film transistor (TFT) on underlay substrate, as shown in fig. 7, can specifically realize in the following way：
S701, be formed with the underlay substrate of the first protection layer pattern formed thin film transistor (TFT) active layer figure；
S702, formed on the underlay substrate for be formed with active layer pattern by a patterning processes source electrode, drain electrode and
The figure of the negative electrode electrically connected by the via of the first protective layer with second transparency electrode layer；
S703, the figure for sequentially forming on the underlay substrate for being formed with source electrode and drain patterns gate insulator, grid.
In the specific implementation, in the preparation method of above-mentioned X-ray detection substrate provided in an embodiment of the present invention, step
S601 is formed before the figure of intrinsic layer on underlay substrate, as shown in fig. 7, can also include：
S704, the figure for forming on underlay substrate the second protective layer.
In the specific implementation, in the preparation method of above-mentioned X-ray detection substrate provided in an embodiment of the present invention, step
S703 is after gate patterns are formed, as shown in fig. 7, can also include：
S705, the figure for sequentially forming on underlay substrate resin-encapsulated layer and flash layer.
The making side of X-ray detection substrate provided in an embodiment of the present invention is described in detail with a specific example below
Method, makes comprising the following steps that for X-ray detection substrate：
Step 1: forming the figure of the second protective layer on underlay substrate；
In the specific implementation, one layer of second protection layer film is deposited on underlay substrate, the material of the second protection layer film
Material could be arranged to SixOy、SixNy、SixOyNz、AlxOy、TixOyOne of them is combined；Structure is carried out to the second protection layer film
Figure technique, i.e., by gluing, exposure, development, dry and etch, the figure of the second protective layer is formed on underlay substrate afterwards；
Step 2: forming the figure of intrinsic layer on underlay substrate；
In the specific implementation, execution of step one be formed with the underlay substrate of the second protection layer pattern deposit one layer of α-
Si:H films, the α-Si:The thickness range of H films can be arranged onBy gluing, exposure, show
Shadow, dry and etch afterwards and realize α-Si:The graphical and stripping photoresist of H intrinsic layers；Now, the α-Si of formation:The intrinsic layer patterns of H
Orthographic projection of the upper surface on underlay substrate be located at α-Si:Orthographic projection of the lower surface of the intrinsic layer patterns of H on underlay substrate
In region；
Step 3: forming first on an inclined side surface of intrinsic layer by patterning processes and ion implantation technology
The figure of doped layer；
In the specific implementation, one layer of photoresist is coated on the intrinsic layer pattern formed after step 2, photoresist is carried out
Expose, develop, dry and etch afterwards, realize P+ α-Si:The doped layers of H first it is graphical；P is realized using ion implantation technology afterwards
+α-Si:The doping of the doped layers of H first；Finally the photoresist on intrinsic layer is peeled off；
Step 4: by patterning processes and ion implantation technology in the relative with being formed with the first doped layer another of intrinsic layer
The figure of the second doped layer is formed on one inclined side surface；
In the specific implementation, one layer of photoresist is coated on intrinsic layer pattern, photoresist is exposed, developed, is dried afterwards
And etch, realize N+ α-Si:The doped layers of H second it is graphical；N+ α-Si are realized using ion implantation technology afterwards:H second mixes
The doping of diamicton；Finally the photoresist on intrinsic layer is peeled off；
Step 5: being carried out by high-temperature activation technique to the first doped layer and the second doped layer ion-activated；
In the specific implementation, using high-temperature activation technique, such as quasi-molecule laser annealing (ELA), rapid thermal annealing
(RTA), the technique such as high temperature stove heat (OVEN), line activating is entered to the ion that the first doped layer and the second doped layer inject；
Step 6: the figure of first transparency electrode layer, Yi Ji are formed on the first doped layer by a patterning processes
The figure of second transparency electrode layer is formed on second doped layer；
In the specific implementation, after execution of step five, the first doped layer, the second doped layer, intrinsic layer figure are being formed with
One layer of electrode layer is deposited on the underlay substrate of shape, the material of the electrode layer could be arranged to tin indium oxide (ITO), indium zinc oxide
(IZO), one of graphene, nano-silver thread, zinc oxide (ZnO) or combination；Patterning processes are carried out to electrode layer, that is, led to
Gluing, exposure are crossed, development, dries and etches afterwards, the figure of first transparency electrode layer is formed on the first doped layer, and second
The figure of second transparency electrode layer is formed on doped layer；
Step 7: forming the figure of the first protective layer on underlay substrate；
In the specific implementation, after execution of step six, the second protective layer, first transparency electrode layer, second are being formed with
One layer of first protection layer film is deposited on transparent electrode layer, the underlay substrate of intrinsic layer pattern, the material of the first protection layer film
Material could be arranged to SixOy、SixNy、SixOyNz、AlxOy、TixOyOne of them is combined；Structure is carried out to the first protection layer film
Figure technique, i.e., by gluing, exposure, development, dry and etch, the first protective layer and the first protection are formed on underlay substrate afterwards
The figure of the via of layer；
Step 8: being formed with the figure for the active layer that thin film transistor (TFT) is formed on the underlay substrate of the first protection layer pattern
Shape；
In the specific implementation, after execution of step seven, deposited being formed with the underlay substrate of the first protection layer pattern
One layer of active layer film, the material of the active layer film could be arranged to α-Si:One of H, LTPS, IGZO, ITZO, ZnON
Or combination；Technique is patterned to active layer film, i.e., by gluing, exposure, development, dries and etches afterwards, on underlay substrate
Form the figure of the active layer of thin film transistor (TFT)；
Step 9: by a patterning processes formed on the underlay substrate for be formed with active layer pattern source electrode, drain electrode, with
And the figure of negative electrode that the via by the first protective layer and second transparency electrode layer are electrically connected；
In the specific implementation, after execution of step eight, one layer of source is formed on the underlay substrate for forming active layer pattern
Drain metal layer, the material of the source-drain electrode metal level could be arranged to one of Mo, Al, Ti, Cu, Nd, Nb or combination；To source
Drain metal layer carries out a patterning processes, i.e., by gluing, exposure, development, dry and etch afterwards, source is formed on underlay substrate
The figure for the negative electrode that pole, drain electrode and via by the first protective layer are electrically connected with second transparency electrode layer；
Step 10: sequentially forming the figure of gate insulator, grid on the underlay substrate for being formed with source electrode and drain patterns
Shape；
In the specific implementation, one layer of gate insulator is deposited on the underlay substrate for being formed with source electrode and drain patterns thin
Film, the material of the gate insulator layer film could be arranged to SixOy、SixNy、SixOyNz、AlxOy、TixOyOne of them is combined；
Technique is patterned to gate insulator layer film, i.e., by gluing, exposure, development, dries and etches afterwards, formed on underlay substrate
The figure of gate insulator；Deposit one layer of gate metal layer on gate insulator afterwards, the material of the gate metal layer can be with
It is set to one of Mo, Al, Ti, Cu, Nd, Nb or combination；Technique is patterned to gate metal layer, i.e., by gluing, is exposed
Light, development, dry and etch afterwards, the figure of grid is formed on gate insulator；
Step 11: sequentially forming the figure of resin-encapsulated layer and flash layer on underlay substrate；
In the specific implementation, after execution of step ten, one layer of resin-encapsulated layer film is coated on underlay substrate, to tree
Fat encapsulation layer film is patterned technique, i.e., by gluing, exposure, development, dry and etch afterwards, resin is formed on underlay substrate
The figure of encapsulated layer；One layer of flash layer is deposited on resin-encapsulated layer afterwards, the material of the flash layer could be arranged to Gd2O2S、
One of CsI, HgI or combination；Finally encapsulation completes X-ray detection substrate and prepared.
So far, above-mentioned steps one to the step 11 provided by instantiation has been produced provided in an embodiment of the present invention
Above-mentioned X-ray detection substrate.
A kind of photodiode provided in an embodiment of the present invention and preparation method thereof, X-ray detection substrate and its making side
Method, the photodiode includes：Underlay substrate, and intrinsic layer, the first doped layer and the second doping on underlay substrate
Layer；Orthographic projection of the upper surface of intrinsic layer on underlay substrate is located at orthographic projection institute of the lower surface of intrinsic layer on underlay substrate
In region；First doped layer and the second doped layer are respectively on the inclined side surface of relative two of intrinsic layer.This hair
The above-mentioned photoelectric diode structure that bright embodiment is provided, because the first doped layer and the second doped layer are located at the two of intrinsic layer respectively
It on individual inclined side surface, can be doped, so can be accurately controlled by the way of ion implanting in manufacture craft
Doping concentration, photoelectricity two can be increased by realizing effective control to photodiode performance, and being set to inclined side surface
The effective area of shining light of pole pipe, the photo-generated carrier of collection is more, and the signal intensity of generation is big.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (17)
1. a kind of X-ray detection substrate, it is characterised in that including：Thin film transistor (TFT) and PIN photodiode；Wherein,
The PIN photodiode includes：Underlay substrate, and intrinsic layer, the first doped layer on the underlay substrate
With the second doped layer；
Orthographic projection of the upper surface of the intrinsic layer on the underlay substrate is located at the lower surface of the intrinsic layer in the lining
In orthographic projection region on substrate；
First doped layer and the second doped layer are respectively on the inclined side surface of relative two of the intrinsic layer；
Wherein, the figure of first doped layer is described by patterning processes, ion implantation technology and high-temperature activation technique
Formed on one inclined side surface of intrinsic layer；
The figure of second doped layer is in the intrinsic layer by patterning processes, ion implantation technology and high-temperature activation technique
Another inclined side surface relative with being formed with first doped layer on formed.
2. X-ray detection substrate as claimed in claim 1, it is characterised in that the intrinsic layer is perpendicular to the substrate base
The section of plate is isosceles trapezoidal structure.
3. X-ray detection substrate as claimed in claim 1, it is characterised in that also include：On first doped layer
First transparency electrode layer；
And the second transparency electrode layer on second doped layer.
4. the X-ray detection substrate as described in claim any one of 1-3, it is characterised in that first doped layer is p-type half
Conductor layer, second doped layer is n type semiconductor layer；Or
First doped layer is n type semiconductor layer, and second doped layer is p type semiconductor layer.
5. X-ray detection substrate as claimed in claim 4, it is characterised in that the thin film transistor (TFT) is that top gate type thin film is brilliant
Body pipe；
The drain electrode of the top gate type thin film transistor is electrically connected with the first transparency electrode layer of the PIN photodiode.
6. X-ray detection substrate as claimed in claim 5, it is characterised in that also include：
The first protective layer positioned at the top of the PIN photodiode；
The negative electrode electrically connected by the via of first protective layer with the second transparency electrode layer of the PIN photodiode.
7. X-ray detection substrate as claimed in claim 6, it is characterised in that the source electrode of the top gate type thin film transistor, leakage
Pole is set with the negative electrode with layer.
8. X-ray detection substrate as claimed in claim 1, it is characterised in that also include：
Positioned at the lower section of the thin film transistor (TFT) and PIN photodiode and positioned at the second protection of the top of the underlay substrate
Layer.
9. X-ray detection substrate as claimed in claim 1, it is characterised in that also include：
Positioned at the top of the thin film transistor (TFT) and PIN photodiode and be stacked resin-encapsulated layer and flash layer.
10. a kind of preparation method of PIN photodiode, it is characterised in that including：
The figure of intrinsic layer is formed on underlay substrate；Orthographic projection position of the upper surface of the intrinsic layer on the underlay substrate
In the lower surface in orthographic projection region on the underlay substrate of the intrinsic layer；
By patterning processes and ion implantation technology the first doped layer is formed on an inclined side surface of the intrinsic layer
Figure；
By patterning processes and ion implantation technology in the relative with being formed with first doped layer another of the intrinsic layer
The figure of the second doped layer is formed on individual inclined side surface；
First doped layer and the second doped layer are carried out by high-temperature activation technique ion-activated.
11. the preparation method of PIN photodiode as claimed in claim 10, it is characterised in that adulterated to described first
After layer and the progress of the second doped layer are ion-activated, in addition to：
The figure of first transparency electrode layer is formed on first doped layer by a patterning processes, and described second
The figure of second transparency electrode layer is formed on doped layer.
12. a kind of preparation method of the X-ray detection substrate as described in claim any one of 1-9, it is characterised in that including：
The figure of intrinsic layer is formed on underlay substrate；Orthographic projection position of the upper surface of the intrinsic layer on the underlay substrate
In the lower surface in orthographic projection region on the underlay substrate of the intrinsic layer；
By patterning processes and ion implantation technology the first doped layer is formed on an inclined side surface of the intrinsic layer
Figure；
By patterning processes and ion implantation technology in the relative with being formed with first doped layer another of the intrinsic layer
The figure of the second doped layer is formed on individual inclined side surface；
First doped layer and the second doped layer are carried out by high-temperature activation technique ion-activated；
The figure of thin film transistor (TFT) is formed on the underlay substrate.
13. the preparation method of X-ray detection substrate as claimed in claim 12, it is characterised in that adulterated to described first
After layer and the progress of the second doped layer are ion-activated, before the figure of thin film transistor (TFT) is formed, in addition to：
The figure of first transparency electrode layer is formed on the first doped layer by a patterning processes, and on the second doped layer
Form the figure of second transparency electrode layer.
14. the preparation method of X-ray detection substrate as claimed in claim 13, it is characterised in that saturating forming described first
After prescribed electrode layer and second transparency electrode layer pattern, in addition to：
The figure of the first protective layer is formed on the underlay substrate.
15. the preparation method of X-ray detection substrate as claimed in claim 14, it is characterised in that on the underlay substrate
The figure of thin film transistor (TFT) is formed, is specifically included：
It is being formed with the figure for the active layer that thin film transistor (TFT) is formed on the underlay substrate of the first protection layer pattern；
By a patterning processes be formed with the underlay substrate of the active layer pattern formed source electrode, drain electrode and pass through
The figure for the negative electrode that the via of first protective layer is electrically connected with second transparency electrode layer；
The figure of gate insulator, grid is sequentially formed on the underlay substrate for being formed with the source electrode and drain patterns.
16. the preparation method of X-ray detection substrate as claimed in claim 12, it is characterised in that formed on underlay substrate
Before the figure of intrinsic layer, in addition to：
The figure of the second protective layer is formed on underlay substrate.
17. the preparation method of X-ray detection substrate as claimed in claim 15, it is characterised in that formed gate patterns it
Afterwards, in addition to：
The figure of resin-encapsulated layer and flash layer is sequentially formed on the underlay substrate.
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| CN109037284B (en) * | 2018-07-26 | 2020-11-27 | 京东方科技集团股份有限公司 | Display device, control method thereof and manufacturing method thereof |
| CN109727974B (en) * | 2019-01-03 | 2021-10-08 | 京东方科技集团股份有限公司 | Photosensitive assembly, preparation method thereof and photosensitive substrate |
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