CN105741694A - Composite glass substrate monochromatic LED display module and manufacturing method thereof - Google Patents
Composite glass substrate monochromatic LED display module and manufacturing method thereof Download PDFInfo
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- CN105741694A CN105741694A CN201410751662.2A CN201410751662A CN105741694A CN 105741694 A CN105741694 A CN 105741694A CN 201410751662 A CN201410751662 A CN 201410751662A CN 105741694 A CN105741694 A CN 105741694A
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Abstract
The invention relates to a composite glass substrate monochromatic LED display module and a manufacturing method of the display module. The manufacturing method comprises the following steps: preparing a composite glass substrate, wherein the composite glass substrate comprises a glass panel and an epitoxy substrate mounted into one side of the glass panel; carrying out epitoxy on the epitoxy substrate of the composite glass substrate, for growing monochromatic LED wafers in a deposition manner; preparing electrodes on the monochromatic LED wafers; manufacturing isolation grooves among the LED wafers, wherein the bottoms of the isolation grooves are positioned in the epitoxy substrate; depositing SiO2 in the isolation grooves; preparing indium tin oxide ITO circuit layers for electric connection with the electrodes on the monochromatic LED wafers; manufacturing control circuits on the ITO circuit layers; and mounting integrated circuit separation devices, wherein the integrated circuit separation devices are used for providing control signals, and the monochromatic LED wafers are controlled to work through the control circuits.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to manufacture method and the display module of a kind of compound glass substrate monochromatic LED display module.
Background technology
Semiconductor display production development is to today, and the supporting or resource of intersection industry has greatly been enriched and perfect.
But has there is bottleneck in high density field in traditional LED Display Technique.Because being limited by the traditional structure of LED light source, the material structure involved by module of integrated processing after being simultaneously limited by, the driving capacity of such as traditional constant-current source encapsulation and structure, the thermally labile sex chromosome mosaicism of the integrated finished product that the loose material of traditional FR4PCB plate is brought and flatness strength problem, and for install be spliced into giant-screen required for injection moulding face shield and mould shell etc., all seriously limit the breakthrough in high density field of the LED Display Technique and application.
Summary of the invention
In view of this, the invention provides the manufacture method of a kind of compound glass substrate monochromatic LED display module and display module, described method technique is simple, be suitable to large-scale production and application, the display module prepared, display effect and concordance are good, it is possible to meet the needs that LED Display Technique is applied in high density field.
First aspect, the invention provides the manufacture method of a kind of compound glass substrate monochromatic LED display module, including:
Preparing compound glass substrate, described compound glass substrate includes face glass and loads the of heap of stone brilliant substrate of described face glass side；
The described of heap of stone brilliant substrate of described compound glass substrate carries out crystalline substance of heap of stone, in order to deposit growth monochromatic LED wafer；
Described monochromatic LED wafer prepares electrode；
The tin indium oxide ITO circuit layer that preparation and described electrode are electrically connected on described monochromatic LED wafer；
Described ITO circuit layer makes control circuit；
Making the isolation channel between LED wafer, the bottom of described isolation channel is positioned at described brilliant substrate of heap of stone；
Described isolation channel deposits SiO2；
Integrated circuit discrete device is installed；Described integrated circuit discrete device is used for providing control signal, is controlled the work of described monochromatic LED wafer by described control circuit.
Preferably, described brilliant substrate of heap of stone is specially SiC substrate, Al2O3One in substrate, GaAs substrate or GaP substrate.
Preferably, described crystalline substance of heap of stone particularly as follows:
Metalorganic chemical vapor deposition MOCVD method is adopted to carry out the deposit growth of monochromatic LED wafer.
Preferably, described integrated circuit discrete device specifically includes:
Application-specific integrated circuit ASIC or on-site programmable gate array FPGA.
Preferably, after described installation integrated circuit discrete device, described method also includes:
Described display module is carried out electrical testing.
Preferably, after described installation integrated circuit discrete device, described method also includes:
Cooling stand is mounted, in order to described display module to be dispelled the heat in described integrated circuit discrete device side.
Preferably, after described installation integrated circuit discrete device, described method also includes:
Described display module is carried out optic test.
Second aspect, embodiments provides LED display module prepared by a kind of method applied described in above-mentioned first aspect.
The manufacture method of compound glass substrate monochromatic LED provided by the invention display module, technique is simple, is suitable to large-scale production and application, and the display module prepared, display effect and concordance are good, it is possible to meet the needs that LED Display Technique is applied in high density field.
Accompanying drawing explanation
The manufacture method flow chart of the compound glass substrate monochromatic LED display module that Fig. 1 provides for the embodiment of the present invention；
One of preparation process schematic diagram of compound glass substrate monochromatic LED display module that Fig. 2 provides for the embodiment of the present invention；
The two of the preparation process schematic diagram of the compound glass substrate monochromatic LED display module that Fig. 3 provides for the embodiment of the present invention；
The three of the preparation process schematic diagram of the compound glass substrate monochromatic LED display module that Fig. 4 provides for the embodiment of the present invention；
The four of the preparation process schematic diagram of the compound glass substrate monochromatic LED display module that Fig. 5 provides for the embodiment of the present invention；
The five of the preparation process schematic diagram of the compound glass substrate monochromatic LED display module that Fig. 6 provides for the embodiment of the present invention；
The six of the preparation process schematic diagram of the compound glass substrate monochromatic LED display module that Fig. 7 provides for the embodiment of the present invention；
The schematic diagram of the compound glass substrate monochromatic LED display module that Fig. 8 provides for the embodiment of the present invention.
Below by drawings and Examples, technical scheme is described in further detail.
Detailed description of the invention
The preparation method of the compound glass substrate monochromatic LED display module of the present invention and display module, it is mainly used in LED display, Ultra fine pitch LED display, VHD LED display, the just luminous TV of LED, the just luminous monitor of LED, LED video wall, the display floater manufacture in the fields such as LED indicates, LED special lighting.
The preparation method flow chart of the compound glass substrate monochromatic LED display module that Fig. 1 provides for the embodiment of the present invention.Fig. 2-Fig. 6 is the preparation process schematic diagram of the compound glass substrate monochromatic LED display module of the embodiment of the present invention, the preparation method of the present invention is illustrated with Fig. 1 and in conjunction with Fig. 2-Fig. 6 below.
The preparation method of the compound glass substrate monochromatic LED display module that the embodiment of the present invention provides comprises the steps:
Step 110, prepares compound glass substrate；
Concrete, as in figure 2 it is shown, the compound glass substrate that the present embodiment adopts, including face glass and the of heap of stone brilliant substrate loading described face glass side.
Wherein, brilliant substrate of heap of stone can be the one in SiC substrate, Al2O3 substrate, GaAs substrate or GaP substrate, naturally it is also possible to be that other can as other substrates of follow-up crystals growth substrate of heap of stone.
For follow-up epitaxial growth, substrate of heap of stone brilliant needs first to carry out patterned process, for instance Sapphire Substrate graphical (PSS) or silicon carbide substrates are graphical etc..Namely, the Grown dry etching mask of brilliant substrate of heap of stone it is used as at sapphire or SiC etc., by the lithographic process of standard, mask is carved figure, ICP lithographic technique is utilized to perform etching, and remove mask, grow epitaxial material more thereon, for instance GaN, make the longitudinal development of GaN material become transverse direction.Can effectively reduce the bit dislocation density of GaN epitaxy material on the one hand, thus reducing the non-radiative recombination of active area, promote internal quantum efficiency, reducing reverse leakage current, improve the life-span of LED；The light that active area sends on the other hand, through GaN and substrate interface Multiple Scattering, changing the angle of emergence of total reflection light, adding the light probability from substrate outgoing of flip LED, thus improve the extraction efficiency of light.
Step 120, carries out crystalline substance of heap of stone on the described of heap of stone brilliant substrate of described compound glass substrate, in order to deposit growth monochromatic LED wafer；
Concrete, the method for Metalorganic chemical vapor deposition (MOCVD), carry out the crystals growth of heap of stone of monochromatic LED.Its process is the N-type epitaxy layer first depositing a kind of color LED, deposits P type epitaxial layer subsequently again, thus forming PN junction structure.
Fig. 3 has illustrated the schematic diagram after monochromatic LED crystals growth of heap of stone.
Step 130, prepares electrode in described LED wafer；
Concrete, electrode is for the signal of telecommunication of conductive outer, thus driving LED wafer to show.
The preparation process of electrode includes deposit of photoetching, etching, tin indium oxide (ITO) etc., is connected with the N-type epitaxy layer of front step MOCVD epitaxy deposit and P type epitaxial layer respectively by ITO.
Schematic diagram prepared by electrode can be as shown in Figure 4.
Step 140, makes the isolation channel between LED wafer, and the bottom of described isolation channel is positioned at described brilliant substrate of heap of stone；
Concrete, as shown in Figure 5.
Carrying out cut in the patterned relevant position of LED wafer aligning substrate, depth of cut is with completely cut off N-type epitaxy layer but does not block substrate and is as the criterion.
Step 150, deposits SiO in described isolation channel2；
Concrete, deposit can adopt the mode of plasma-enhanced chemical vapor deposition (PlasmaEnhancedChemicalVaporDeposition, PECVD) to carry out.By SiO2It is filled in isolation channel.Specifically as shown in Figure 6.
Step 160, the tin indium oxide ITO circuit layer that preparation and described electrode are electrically connected on described monochromatic LED wafer；
Concrete, as it is shown in fig. 7, ITO circuit layer includes ITO top layer conductive layer, ITO bottom conductive layer and ITO drives control conductive layer.It is connected with each other according to design respectively between ITO conductive layer.
Wherein, wherein, ITO top layer conductive layer is for the level connection joint of each group of LED wafer, and ITO bottom conductive layer connects for the vertical direction of each group of LED wafer, and ITO drives the multiple ITO controlling conductive layer conduction to be connected with ITO top layer conductive layer or ITO bottom conductive layer respectively.
Step 170, makes control circuit on described ITO circuit layer；
Concrete, this control circuit is used for being connected with follow-up need integrated circuit discrete device to be mounted or other peripheral components, transmission of control signals.
Such as, being specifically as follows data cascade terminal, external circuit can pass through data cascade terminal and drive signal to the transmission of each monochromatic LED wafer set.
Step 180, installs integrated circuit discrete device；
Concrete, described integrated circuit discrete device is used for providing control signal, is controlled the work of LED wafer by described control circuit.
In the present embodiment, integrated circuit discrete device specifically includes:
Application-specific integrated circuit ASIC or on-site programmable gate array FPGA.
Integrated circuit discrete device can adopt such as modes that is welded such as ball-like pins Background Grid array packages technology (BallGridArray, BGA), and carries out eutectic with the LED wafer of preparation and welds, forms described display module, as shown in Figure 8.
After step 160, also reply compound organic substrate LED of heap of stone brilliant shows that module carries out electrical testing, to ensure its electric property, and the electric property after assembling with ASIC or FPGA.
Subsequently, also to mount cooling stand in integrated circuit discrete device side, in order to compound organic substrate brilliant LED of heap of stone is shown that module dispels the heat.
Thus, the display module of the present invention is namely obtained.
After step 160, also tackle described display module and carry out optic test, to detect its optical property.
Finally it is cleaned dried, shipment can be packed.
The manufacture method of the compound glass substrate monochromatic LED display module that the embodiment of the present invention provides, technique is simple, is suitable to large-scale production and application, it is possible to disposable prepare LED whole on compound glass substrate, therefore the display module prepared, display effect and concordance are good.Utilize MOCVD growing technology, reduce tradition LED and mount the pattern restriction for size, it is possible to meet the needs that LED Display Technique is applied in high density field.
Accordingly, the embodiment of the present invention additionally provides a kind of compound organic substrate utilized prepared by said method brilliant LED display module of heap of stone.As shown in Figure 8, described display module includes: compound glass substrate 801, ITO circuit (containing insulating barrier) 802, BGA soldered ball 803, data cascade terminal 804, ASICIC discrete devices such as (or) FPGA 805 and cooling stand 806.
Preferably, showing in module at the present embodiment, compound glass substrate 801 has direction discernment mark, it is simple to this display module splicing large scale display screen.
When being spliced into display screen, it is possible to make display floater one piece complete by display fabric width ratio (such as 4K high definition 16:9) and pel spacing, be used for protecting purposes and support purposes, in order to be on spliced display module, seamless Mi Pu is viscous to spell.
The pixel modulus of the display module that the present embodiment provides can be 192X108；96X54；The sizes such as 48X27.
The compound glass substrate monochromatic LED display module of the present invention, manufacturing process is simple, and cost is low, has good display effect.
Above-described detailed description of the invention; the purpose of the present invention, technical scheme and beneficial effect have been further described; it is it should be understood that; the foregoing is only the specific embodiment of the present invention; the protection domain being not intended to limit the present invention; all within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (8)
1. the manufacture method of a compound glass substrate monochromatic LED display module, it is characterised in that described method includes:
Preparing compound glass substrate, described compound glass substrate includes face glass and loads the of heap of stone brilliant substrate of described face glass side；
The described of heap of stone brilliant substrate of described compound glass substrate carries out crystalline substance of heap of stone, in order to deposit growth monochromatic LED wafer；
Described monochromatic LED wafer prepares electrode；
Making the isolation channel between LED wafer, the bottom of described isolation channel is positioned at described brilliant substrate of heap of stone；
Described isolation channel deposits SiO2；
The tin indium oxide ITO circuit layer that preparation and described electrode are electrically connected on described monochromatic LED wafer；
Described ITO circuit layer makes control circuit；
Integrated circuit discrete device is installed；Described integrated circuit discrete device is used for providing control signal, is controlled the work of described monochromatic LED wafer by described control circuit.
2. method according to claim 1, it is characterised in that described brilliant substrate of heap of stone is specially SiC substrate, Al2O3One in substrate, GaAs substrate or GaP substrate.
3. method according to claim 1, it is characterised in that described crystalline substance of heap of stone particularly as follows:
Metalorganic chemical vapor deposition MOCVD method is adopted to carry out the deposit growth of monochromatic LED wafer.
4. method according to claim 1, it is characterised in that described integrated circuit discrete device specifically includes:
Application-specific integrated circuit ASIC or on-site programmable gate array FPGA.
5. method according to claim 1, it is characterised in that after described installation integrated circuit discrete device, described method also includes:
Described display module is carried out electrical testing.
6. method according to claim 1, it is characterised in that after described installation integrated circuit discrete device, described method also includes:
Cooling stand is mounted, in order to described display module to be dispelled the heat in described integrated circuit discrete device side.
7. method according to claim 1, it is characterised in that after described installation integrated circuit discrete device, described method also includes:
Described display module is carried out optic test.
8. apply monochromatic LED display module prepared by the arbitrary described method of the claims 1-7 for one kind.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958389A (en) * | 2010-07-30 | 2011-01-26 | 晶科电子（广州）有限公司 | LED surface mounting structure for silicon substrate integrated with functional circuits and packaging method thereof |
| CN202930386U (en) * | 2012-11-22 | 2013-05-08 | 华南理工大学 | Large-size LED chip |
| CN103311385A (en) * | 2013-05-21 | 2013-09-18 | 严敏 | Manufacturing method for semiconductor lighting DA (direct attach) eutectic chip |
| CN203433761U (en) * | 2013-09-06 | 2014-02-12 | 严敏 | Light-emitting diode (LED) light-emitting display board |
| CN203870923U (en) * | 2014-05-30 | 2014-10-08 | 周鸣波 | Inorganic epitaxial LED display module |
-
2014
- 2014-12-10 CN CN201410751662.2A patent/CN105741694A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958389A (en) * | 2010-07-30 | 2011-01-26 | 晶科电子（广州）有限公司 | LED surface mounting structure for silicon substrate integrated with functional circuits and packaging method thereof |
| CN202930386U (en) * | 2012-11-22 | 2013-05-08 | 华南理工大学 | Large-size LED chip |
| CN103311385A (en) * | 2013-05-21 | 2013-09-18 | 严敏 | Manufacturing method for semiconductor lighting DA (direct attach) eutectic chip |
| CN203433761U (en) * | 2013-09-06 | 2014-02-12 | 严敏 | Light-emitting diode (LED) light-emitting display board |
| CN203870923U (en) * | 2014-05-30 | 2014-10-08 | 周鸣波 | Inorganic epitaxial LED display module |
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Effective date of registration: 20160804 Address after: 214100, Jiangsu, Wuxi Province, high road, Binhu District No. 999 (software R & D building) Applicant after: Wuxi Bridge Technology Co. Ltd. Address before: 100097 room B1F, unit four, building No. three, Far East Road, Haidian District, Beijing Applicant before: Yan Min Applicant before: Cheng Jun Applicant before: Zhou Mingbo |
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Application publication date: 20160706 |
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