KR101742518B1 - Nano-scale vertical led module and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a micro-vertical type LED module and a method of manufacturing the same. According to one embodiment, a method of fabricating an ultra-small vertical type LED module includes: laminating an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate; Etching at least a part of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer to form a plurality of ultra-small LED (light emitting diode) elements; Forming an insulating layer on at least a part of the plurality of micro-LED devices; Forming a first electrode layer on the p-type semiconductor layer; Removing the substrate; Forming a second electrode layer on a surface of the n-type semiconductor layer from which the substrate is removed; And forming a fluorescent layer on one side of the second electrode layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an ultra-small vertical type LED module,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultra-small vertical type LED module and a method of manufacturing the same. More particularly, the present invention relates to a miniature vertical type LED module of a nano unit and a manufacturing method thereof.

In 1992, Nakamura of Nichia Corporation of Japan succeeded in fusing high-quality single crystal GaN nitride semiconductors by applying a low-temperature GaN compound buffer layer, and thus the LED has been actively developed. An LED is a semiconductor having a structure in which an n-type semiconductor crystal in which a plurality of carriers are electrons and a p-type semiconductor crystal in which a plurality of carriers are holes are bonded to each other using the characteristics of compound semiconductors, It is a semiconductor device converted into light and displayed. These LED semiconductors have a very low energy consumption due to high photoconversion efficiency, have a semi-permanent and environmentally friendly life, and are called the revolution of light as a green material. In recent years, high-brightness red, orange, green, blue and white LEDs have been developed with the development of compound semiconductor technology.

Accordingly, development of LED lighting and LED display using LED has been continuing. Among them, LED display can be utilized as a display of various small electronic devices such as a mobile phone, a notebook computer, and so on.

According to one embodiment in which an LED is currently used for a display, it is a liquid crystal display (LCD). Since the liquid crystal display device does not generate light spontaneously, it is necessary to provide a back light for generating light on the back side of the communication LCD panel, and the white light is emitted from the rear side of the LCD panel, The color of the image can be reproduced close to the actual color. First, a cold cathode fluorescent lamp (CCFL) or an external electrode fluorescent lamp (EEFL) was used as a light source. However, a light emitting diode (LED) having excellent physical and chemical characteristics , LEDs) have appeared, backlights using LEDs as light sources have been put to practical use, and further attempts are being made to commercialize LEDs as full color LED displays instead of simple backlights.

According to these attempts, the full-color LED display, which is currently commercialized, is a product that can be seen in everyday life by a display for an outdoor display board in which tens of thousands or more than three hundreds of three primary color LED lamps of red, Which is called LCD TV or monitor, is not a true LED display because it is a backlight of LCD panel that adopts white or trichromatic LED as backlight instead of conventional fluorescent lamp.

The reason why the conventional LED device can not be developed into a TV or monitor-sized display is due to the fundamental limitation of a technical method of manufacturing a display using an LED device and a method of implementing a full color.

When making direct TV display using conventional LED device, it can be calculated by simply connecting 5 ~ 40 wafers of 2 ~ 8 inch to make 40 inch TV. Therefore, there are a number of problems that can not be overcome by current technologies to realize direct TV-class display with LED devices using currently known manufacturing techniques. In addition, in order to realize full color, red, green, and blue three-primary-color LED devices must be embedded in one pixel, so that an LED full-color display can not be realized by simply connecting red, green and blue LED wafers.

In order to realize a high-efficiency LED display, it has been known through many studies that a bottom-up method of directly growing a III-V thin film and a nano-rod LED device at a patterned pixel position of a large- The process of directly depositing a -V thin film on a large substrate such as a TV display size and growing a high crystallinity / high efficiency III-V thin film and nano-rod LED element on a transparent electrode patterned on a transparent amorphous glass substrate is also determined It is very difficult to study. As a result of such technical limitations, few attempts have been made to implement a TV or monitor class full color display by directly growing an LED element on a large-area glass substrate.

Another approach pursued by many researchers to realize LED displays is the bottom-up approach based on nanotechnology. In this method, a nano-rod-type LED is grown on a single crystal substrate, and then a part of the LED is grown and rearranged on a pixel-patterned electrode in a bottom-up manner. However, the nanorod LED manufactured by the bottom-up method has a problem in that the luminous efficiency is inferior to the conventional thin-film LED grown on the wafer.

Another method is a top-down method for cutting out high efficiency LED devices to implement LED displays. In general, this method is a method of implementing a display in a one-to-one correspondence manner in which micro LED devices manufactured in a top-down manner at sub-pixel positions of a large-area glass substrate are arranged one by one. In this case, the LED device is grown on a sapphire substrate and patterned in a micro-size to fabricate a micro LED device, and then the electrode is wired, thereby realizing a micro LED display that is smaller than the wafer substrate size.

Since the conventional LED module has a size suitable for picking up, there is no big problem in the unidirectional arrangement of the semiconductor layers in the module manufacturing process. However, in the case of ultra-small LED modules, the size is so small that it is impossible to erect it by mechanical means.

As a current technology level, the above-described last method seems desirable in the implementation of LED displays. However, when electrodes, LED elements, and other electrodes are stacked in a bottom-up manner and are three-dimensionally coupled in an electrode wiring of a manufactured LED element, the LED element must be three-dimensionally erected three- This may be possible if a general LED device is used. However, when an LED device is manufactured to have a nanoscale size, it is difficult to align the LED device three-dimensionally on the electrode, and some of the LED device may exist in a lying form.

Specifically, in manufacturing a module using a very small LED, a very small LED is aligned on an electrode by using a linker or a conductive ink. However, in this method, an ultra-small LED is erected three-dimensionally on the electrode There is a problem in that it is difficult to combine the two electrodes with each other in a very small size.

In addition, the occurrence of the above-described pixel defect may cause a problem that the entire display is poor even if one or two pixels are defective, and the display itself may be defective.

Patent Document No. 10-1209449 discloses a method of combining five or more very small LED elements in a bundle on each pixel position (subpixel) in a full-color LED display and using a coupling linker in a very small LED element, (Pixel position) of the LED display, but it is not necessary to lie down on the side of the ultra-small LED element. However, in combining the ultra-small LED elements at the pixel position Still ultra-small LED devices sideways? And there is a defect that the bundle is turned upside down and connected.

Patent Registration No. 10-1209449 (registered patent publication)

SUMMARY OF THE INVENTION The present invention has been conceived to solve the problems described above, and it is an object of the present invention to provide a display comprising a very small size LED element of a nano unit size, A method and a device for partially merging the above-mentioned information can be provided.

In addition, the present invention can provide a display and a method of manufacturing the same for improving the defective display ratio caused by placing a miniature LED element of a nano size between electrodes.

According to an embodiment of the present invention, there is provided a method of manufacturing an ultra-small vertical type LED module, including: stacking an n-type semiconductor layer, an active layer and a p-type semiconductor layer on a substrate; Etching at least a part of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer to form a plurality of ultra-small LED (light emitting diode) elements; Forming an insulating layer on at least a part of the plurality of micro-LED devices; Forming a first electrode layer on the p-type semiconductor layer; Removing the substrate; Forming a second electrode layer on a surface of the n-type semiconductor layer from which the substrate is removed; And forming a fluorescent layer on one side of the second electrode layer.

According to various embodiments, each of the first electrode layer and the second electrode layer may be formed of a switch layer or a transparent electrode layer.

According to various embodiments, the first electrode layer may include a plurality of thin film transistors having a specified pattern and electrodes corresponding to each of the plurality of thin film transistors.

According to various embodiments, the electrode may be connected to two or more of the plurality of ultra-small LED elements.

According to various embodiments, the step of forming the fluorescent layer on one side of the second electrode layer may include: determining an area of the fluorescent material based on the area of the electrode; Forming a pattern using a plurality of types of phosphors based on the determined area of the phosphor; And forming the fluorescent layer based on the determined pattern.

According to various embodiments, the step of forming the first electrode layer on the p-type semiconductor layer may be formed of a film including a plurality of thin film transistors having a specified pattern and electrodes corresponding to each of the plurality of thin film transistors .

According to various embodiments, the step of forming the insulating layer on at least a part of the formed plurality of ultra-small LED elements may include filling a space formed between the formed plurality of ultra-small LED elements.

According to an embodiment of the present invention, an ultra-small vertical type LED module includes a plurality of ultra-small LED elements arranged in parallel and spaced apart from each other and including a p-type semiconductor layer and an n-type semiconductor layer; And a first electrode layer formed on a surface of the P-type semiconductor layer of the ultra-small LED module and a second electrode layer formed on a surface of the n-type semiconductor layer, wherein p -Type semiconductor layers and the n-type semiconductor layers are arranged so that the directions of the micro-type semiconductor layers and the n-type semiconductor layers are equal to each other may be 80% or more.

According to various embodiments, each of the first electrode layer and the second electrode layer may be formed of a switch layer or a transparent electrode layer.

According to various embodiments, the first electrode layer may include a plurality of thin film transistors having a specified pattern and electrodes corresponding to each of the plurality of thin film transistors.

According to various embodiments, each of the first electrode layer and the second electrode layer may include an electrode connected to two or more of the plurality of ultra-small LED elements.

According to various embodiments, a plurality of types of phosphors can be formed in a designated pattern based on the area of the phosphor determined by the area of the electrode.

According to various embodiments, the first electrode layer may be formed of a film including a plurality of thin film transistors having a specified pattern and electrodes corresponding to each of the plurality of thin film transistors.

According to various embodiments, the spacing space between the plurality of ultra-small LED elements and the plurality of ultra-small LED elements may be filled with an insulator.

According to various embodiments, the p-type semiconductor layer and the n-type semiconductor layer may be arranged so that the directions of the p-type semiconductor layer and the n-type semiconductor layer are equal to each other.

According to an embodiment of the present invention, a micro-vertical type LED module includes: a first electrode layer; A plurality of ultra-small LED (light emitting diode) elements formed by sequentially stacking an n-type semiconductor layer, an active layer and a p-type semiconductor layer on a substrate and vertically spaced apart from each other on the substrate by etching; An insulating layer filled between the plurality of ultra-small LED elements; A first electrode layer formed on the insulating layer and the p-type semiconductor layer, the first electrode layer being electrically connected to the p-type semiconductor layer of at least a part of the plurality of ultra-small LED elements; A second electrode layer formed on the insulating layer from which the substrate is removed and on the n-type semiconductor layer, the second electrode layer being electrically connected to at least a part of the n-type semiconductor layer of the plurality of micro LED devices; And a fluorescent layer formed on the second electrode layer, wherein the plurality of ultra-small LED elements may be perpendicular to the first electrode layer and the second electrode layer.

According to various embodiments, each of the first electrode layer and the second electrode layer may be formed of a switch layer or a transparent electrode layer.

According to various embodiments, the insulating layer may be characterized by filling between a plurality of miniature LED elements formed.

According to various embodiments, all of the ultra-small LED elements included in the plurality of vertically spaced small LED elements may be arranged so that the directions of the n-type semiconductor layer and the p-type semiconductor layer are the same.

According to an embodiment of the present invention, a display including a micro-vertical type LED element and a module can be realized.

According to various embodiments of the present invention, the process of arranging the ultra-small LED elements to form the pixels of the display is omitted by forming the electrodes in a state where the ultra-small LED elements are not separated from the substrate in the manufacturing process of the ultra-small LED element And the cost can be reduced accordingly.

According to various embodiments of the present invention, the manufacturing process of the LED module can be simplified by partially integrating the LED module manufacturing process without separating the ultra-small LED elements from the substrate in the manufacturing process of the ultra-small LED device.

According to various embodiments of the present invention, in etching the ultra-small LED element in the pn junction light emitting element portion, the pn junction element layer is etched in various patterns by changing the pattern to arrange the ultra-small LED elements in the manufacturing process of the LED module It is possible to provide an LED module having an arrangement of ultra-small LED elements of a complicated pattern.

According to various embodiments of the present invention, it is possible to effectively improve defects generated when the ultra miniature LEDs are laid down or turned over by fixing the ultra miniature LED elements to the electrode layer in the state where the ultra-small LED elements are etched.

1 is a diagram showing a display and a pixel configuration included in an electronic device according to an embodiment of the present invention.
2 is a view of an LED module including a plurality of ultra-small LED elements in a display according to an embodiment of the present invention.
3 shows a schematic structure of an LED module according to an embodiment of the present invention.
FIGS. 4A through 4G are views illustrating a process of producing an ultra miniature LED module according to an embodiment of the present invention.
5 illustrates a structure of an electrode layer formed on one surface of an LED layer and an LED layer according to an embodiment of the present invention.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, it is to be understood that the invention is not limited to the specific embodiments thereof, And equivalents and alternatives falling within the spirit and scope of the invention. In order to clearly illustrate the present invention in the drawings, parts not related to the description may be omitted, and the same reference numerals may be used for the same or similar components throughout the specification.

In various embodiments of the present invention, expressions such as 'or', 'at least one', etc. may denote one of the words listed together, or may represent a combination of two or more. For example, 'A or B', 'At least one of A and B' may include only one of A or B, and may include both A and B.

In various embodiments of the present invention, expressions such as 'first', 'second', 'first', 'second', etc. may describe various components, but they must mean the order, . For example, the first device and the second device are both devices and may represent different devices. Also, unless the elements of the configuration, function, operation, etc. of the first device are the same as or similar to the second device, the first device can be named as the second device, without departing from the scope of the various embodiments of the present invention, Similarly, the second device may also be termed the first device.

In the various embodiments of the present invention, when an element is referred to as being "connected" or "connected" to another element, the elements may be directly connected or connected, It should be understood that there may be one and the same time. On the other hand, if an element is referred to as being 'directly connected' or 'directly connected' to another element, it should be understood that no other element exists between the elements.

The terms used in various embodiments of the present invention are intended to illustrate a specific embodiment and are not to be construed as limiting the invention, for example, the singular forms "a," "an, ≪ / RTI >

It is to be understood that devices (or electronic devices) in accordance with various embodiments of the present invention may be replaced by other devices of the same or similar type, unless explicitly stated to the contrary, An electronic device may be comprised of one or more of the various devices described. For example, the device may be provided as a structure that includes at least a portion of the devices described, or at least some of the functionality of the device. According to one embodiment, the apparatus may be composed of at least one display (display) or a light source (illumination), or may be composed of an apparatus comprising at least one display and / or a light source. In the following description, various embodiments of a miniature vertical type LED module (or a very small LED module) and a method of manufacturing the same for the display and / or the light source can be described.

1 is a diagram showing a display and a pixel configuration included in an electronic device according to an embodiment of the present invention.

According to one embodiment, at least one display 150 may be included in the electronic device 100. Here, the display 150 may be defined as a display using a light-emitting diode (LED) panel including a LED element as a backlight and / or a display using the LED panel as a display unit. The display 150 may be referred to as a display device 150 and a display unit 150. [

Referring to FIG. 1, the unit of an image displayed on the display 150 of the electronic device 100 may be defined as a pixel (pixel). In general, a pixel may be defined as a matrix of shapes (or structures) in a specified range based on a grid-like space comprised of rows and columns in the display 150, but is not so limited, and according to one embodiment, Can be defined in the form of a matrix based on LED elements. In addition, the pixel may be defined as a matrix based on a plurality of micro LED elements constituting the designated pattern and / or a micro LED module on which the plurality of micro LED elements are arranged.

According to one embodiment, in general, one unit pixel constituting the display 150 may comprise one LED element in a grid determined based on one row and one column, but one unit pixel A display 150 that is configured to include more than one LED element may be described.

According to various embodiments of the present invention, one unit pixel includes a plurality of micro LED elements, and the micro LED module can be defined for a plurality of micro LED elements.

FIG. 2 is a diagram illustrating a very small LED module including a plurality of ultra-small LED elements in a display according to an embodiment of the present invention.

According to one embodiment, the display 150 may be divided into at least one line in rows and columns, in which case the lines comprised in the row or column may be comprised of an electrode line (e.g., a word line) Or a data line (e.g., a bit line, a bit line) through which a signal is input / output. In the following description, a line disposed in a row or a column constituting the display 150 may be represented by a first signal line, and a line disposed in the other one may be indicated by a second signal line.

According to various embodiments of the present invention, the lines disposed in the rows and columns of the display 150 are represented by the first signal line and the second signal line, but the present invention is not limited thereto. And it is obvious that at least one of the first signal line and the second signal line may be separately arranged without being disposed in the rows and columns of the display 150, and at least one of the signal lines may be omitted.

According to one embodiment, a row (e.g., the first signal line 231) constituting the display 150 may be composed of electrodes. For example, referring to FIG. 2, WL1, WL2, WL3 to WLn may be constituted by a line supplying a basic signal (e.g., frequency) or current designated to a very small LED module (hereinafter LED module).

According to one embodiment, the column (e.g., the second signal line 233) constituting the display 150 may be constituted by a data line. For example, referring to FIG. 2, BL1, BL2, and BL3 to BLm may control signals input to / output from the LED module.

Referring to FIG. 2, the first signal line 231 is represented by the name of WL and is described as a line for supplying a basic signal (for example, frequency) or current designated to the LED module, and the second signal line 233 BL, and controls the signal input / output to / from the LED module. However, the present invention is not limited to this, and may be applied to a case where the signal lines disposed on the display 150 are used. May be used in various ways, and it is obvious that the names may also be used differently.

According to one embodiment, FIG. 2 may represent a display 150 that constitutes a pixel based on a first signal line 231 and a second signal line 233. For example, the plurality of LED elements provided in the display 150 may be arranged in a designated pattern (e.g., a square, a pentagon, a hexagon, or the like). According to one embodiment, a plurality of LED elements included in the arranged LED module 110 and the LED module 110 are determined as one unit pixel, or a plurality of one unit pixel You can decide.

According to various embodiments of the present invention, one LED module 110 may be configured as one unit pixel based on the formation of the fluorescent layer, and may include two or more unit pixels.

According to one embodiment, when a fluorescent layer composed of one color is applied to one LED module 110, the LED module 110 including a plurality of LED devices may be composed of one unit pixel. However, the present invention is not limited to this. For example, when the fluorescent layer composed of two or more colors is applied, the LED module 110 including a plurality of LED elements may have an area corresponding to each fluorescent layer of 1 unit pixel , 111, 113).

Here, according to various embodiments of the present invention, the LED module 110 may represent a logically distinct unit rather than being physically separated (or separated).

Referring to FIG. 2, the surface of the LED module 110 may be formed with a phosphor patterned to express a specific color by filtering the light emitted from the LED device. According to one embodiment, the four LED elements may be arranged in a quadrangular pattern. At this time, the phosphor may be coated on the upper portion of the light emitting portion corresponding to each of the LED elements included in the LED module 110, have.

For example, the LED module 110 may be coated with a phosphor configured to emit light emitted from the LED element 211 in at least one color. For example, when the LED module 110 is composed of one unit pixel, one phosphor may be applied to the LED module 110, or a first color (or a second color) may be applied to the first region 101 (Or a third type) phosphor is added to the third region 111 and a third color (or a third type) phosphor is added to the fourth region 113. In the second region 103, The pattern can be determined so as to apply the four-color (or the fourth type) phosphor. Here, the first to fourth color phosphors may be composed of phosphors of the same color (type).

According to one embodiment, the LED module 110 may be specified in units connected to one switch 220. [ In addition, it is apparent that variously modified embodiments can be applied to the pattern for disposing the phosphor on the surface of the light emitting portion.

According to one embodiment, the switch may be made to be ultra-small and / or ultra-thin and connected to the LED module 110. For example, the switch connected to the LED module 110 may be a thin film transistor (TFT).

According to one embodiment, the LED element 211 may be provided with an LED element (hereinafter referred to as an ultra-small LED element 211) formed into an ultra-small size (e.g., nano size). For example, the LED element 211 may have a diameter of 200 nm to 700 nm and a length of 2 to 3 μm.

1, four regions of an LED module (for example, a first region 101, a second region 103, a third region 111, or a fourth region 113) in the display 150, Respectively, and each of the micro-LED elements 211 corresponds to this region. However, the present invention is not limited thereto, and it is apparent that the LED module 110 may be configured to include various numbers of ultra-small LED elements 211.

In addition, according to the above description, the ultra-small LED element 211 included in the LED module 110 corresponds to one unit pixel and each phosphor. However, the present invention is not limited to this, In addition to determining the number of the ultra-small LED elements 211 and the number of fluorescent materials by 1: 1, the number of corresponding ultra-small LED elements 211 may be variously determined based on the area of one unit pixel It is self-evident. Furthermore, although the number of the ultra-small LED elements 211 included in the area of one unit pixel can be made uniform, several to several dozens of numerical errors may be generated.

According to one embodiment, at least one switch 220 may be included corresponding to the LED modules 110 (e.g., 101, 103, 111, and 113) configured in the display 150. However, the present invention is not limited to this, and the display 150 may be configured to include two or more switches in the designated number of LED modules 110. [

3 shows a schematic structure of an LED module according to an embodiment of the present invention.

3, the display 150 includes a switch layer including a plurality of switches 220, an LED layer in which at least one ultra-small LED element 211 is vertically arranged, a transparent electrode layer 303 composed of transparent electrodes, And may include a fluorescent layer composed of various types of phosphors. Here, each phosphor may be used as a unit for distinguishing one unit pixel.

According to one embodiment, the switch layer includes a plurality of switches 220 that apply power to the ultra-small LED elements based on an input signal, and may include electrodes (or electrode lines) and / or data lines As shown in FIG.

Here, the switch 220 may be composed of a switch having an ultra-small and / or ultra-thin structure. According to one embodiment, the switch 220 may be a thin film transistor. At this time, the switch layer may be provided in the form of a film including a plurality of thin film transistors.

According to one embodiment, the plurality of ultra-small LED elements 211 of the LED layer may be formed in a direction perpendicular to the switch layer. At this time, the remaining regions of the plurality of micro-LED elements 211 in the LED layer may be filled with the insulator 301.

At this time, the insulator 301, which is filled in the remaining area of the plurality of micro LED elements 211 in the LED layer, maintains a state in which the plurality of micro LED elements 211 are arranged and / As shown in FIG. Here, the insulator 301 filled with a thickness may be designated as an insulating layer.

Here, the insulator 301 is used in the LED layer is silica (SiO _2), tin oxide showing an electrical insulating characteristics (SnO _2), titania (TiO _2), zirconia (ZrO _2), alumina (Al ₂ O ₃ ) Or a combination of two or more.

According to one embodiment, the transparent electrode layer 303 has the property of conducting electricity and can function as an electrode (or ground). In addition, the transparent electrode layer 303 may have a function of emitting light generated from the ultra-small LED element 211 to the outside. Therefore, the transparent electrode layer 160 is required to have excellent electrical characteristics and characteristics that do not hinder light emission.

According to one embodiment of the transparent electrode layer 303, the transparent electrode layer 303 may be formed of ITO (Indium Tin Oxide), TCO (Transparent conductive oxide), ZnO, or a transparent metal having conductivity. At this time, the thickness of the transparent electrode layer 303 may be 180 nm to 220 nm.

According to one embodiment, the fluorescent layer includes at least one color for converting the light emitted from the ultra-small LED element 211 into a specific color, and may be formed on the upper surface of the transparent electrode layer 303.

Referring to FIG. 3, the phosphor layer is a layer coated with two or more color-coded phosphors, and each phosphor is shown to have a gentle dome shape. However, the present invention is not limited thereto, and each phosphor may have a uniform thickness It may be applied as a vibrating layer. In addition, the fluorescent layer may be formed in the form of a monolayer film having a uniform thickness, in which phosphors divided into various colors are formed in a designated pattern.

For example, a mixture of fluorescent material, glass powder and silicon representing a specific color constituting the fluorescent layer may have a film form sintered at a high temperature.

According to FIG. 1 and the above description, the phosphor constituting the fluorescent layer corresponds to one micro-LED element 211 with respect to one unit pixel 101, 103, 111 and / or 113, One unit pixel may be determined so as to correspond to an area exceeding an area corresponding to one ultra-small LED element 211 as shown in FIG.

FIGS. 4A through 4G are views illustrating a process of producing an ultra miniature LED module according to an embodiment of the present invention.

4A illustrates a p-n junction light emitting device section 400 having a plurality of ultra-small LED elements 211 formed thereon. Here, the p-n junction light emitting device section 400 may include an n-type semiconductor layer 405, an active layer 407, and a p-type semiconductor layer 409 on a substrate 401. According to various embodiments, a sacrificial layer 403 may be formed between the substrate 401 and the n-type semiconductor layer 405. At least a part of the layers constituting the pn junction light emitting device unit 400 may be formed by metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PCVD) or by various deposition and growth methods such as chemical vapor deposition (CVD), enhanced chemical vapor deposition (MBE), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE).

According to one embodiment, the substrate 401 can be used as a substrate for forming the LED layer of the display 150. For example, the substrate 401 may be determined in consideration of the lattice matching with the nitride semiconductor material grown on the substrate 110. [ For example, a sapphire substrate is mainly used because it is easy to grow a nitride semiconductor material, and is stable at a high temperature. In the present invention, the substrate 110 is not limited to a sapphire substrate but may be a silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), silicon (Si), gallium phosphide (GaP), indium phosphide (InP) , at least one component of zinc (ZnO), spinel (MgAl ₂ O ₄₎ oxide, magnesium oxide (MgO), meta-aluminate lithium (LiAlO _2), aluminum nitride (AlN) and an oxidizing lithium gallate (LiGaO ₂₎ .

According to one embodiment, the n-type semiconductor layer 405 may be formed on the substrate 401. [ The n-type semiconductor layer 405 may be composed of GaN doped with an n-type impurity according to an embodiment. For example, the n-type semiconductor layer 405 may be formed of n-type Al _x In _y Ga 1 _-xy N (0? X, y, x + y? 1) have. For example, the nitride semiconductor may be GaN, AlGaN, InGaN, or the like. The n-type semiconductor layer 405 may be formed of a nitride semiconductor doped with an n-type dopant. The dopant used for the doping includes Si, Ge, Se, Te, or C.

According to one embodiment, the active layer 407 may be formed on the n-type semiconductor layer 405. The active layer 407 is a region in which photons are emitted by recombination of electrons and holes through a predetermined band gap. In addition, the active layer 407 can be determined in terms of the size of the bandgap depending on the type of material and the wavelength of the extracted light based on the size of the bandgap. The active layer 407 may have a multiple quantum well (MQW) structure in which two or more quantum wells and a quantum barrier are stacked, or may have a single quantum well structure. At this time, the barrier layer and the well layer constituting the active layer 407 may be two-membered to quaternary compound semiconductor layers represented by the general formula AlxInyGa1-x-yN (0? X, y, x + y?

According to one embodiment, the p-type semiconductor layer 409 is a layer in which holes are majority carriers, and in one embodiment, may be composed of AlGaN doped with a p-type impurity. For example, the p-type semiconductor layer 409 may be formed of p-type AlxInyGa1-x-yN (0? X, y, x + y? 1) and may include a p-type cladding layer. For example, the nitride semiconductor material may be GaN, AlGaN, InGaN or the like, and the p-type semiconductor layer 409 may be formed of a semiconductor material doped with a p- ) Is doped with Mg, Zn or Be.

According to one embodiment, at least a portion of a pn junction light emitting device layer (e.g., a layer comprising 405, 407 and 409, or LED layer) formed on a substrate 401 and at least a portion of the sacrificial layer 403 is etched (or etched, etching can be performed to form the shape of the ultra-small LED element 211. For example, the diameter of the ultra-small LED element 211 may be uniformly formed as 200 to 700 nm in diameter and 2 to 3 탆 in length.

According to one embodiment, in the etching of at least a part of the pn junction light emitting device layer and the sacrifice layer 403, a high frequency inductively coupled plasma reactive ion etching (ICP-RIE) Can be used.

According to various embodiments, the etching method is not limited to the etching method described above, and can be etched by applying a cryogenic etching process, a Bosch process, or the like.

According to an embodiment of the present invention, the process of FIG. 4B is performed without removing the substrate 401 and / or the sacrificial layer 403 to separate the ultra-small LED elements in the process of fabricating the ultra-small LED device can do.

Referring to FIG. 4B, an insulating layer may be formed on the p-n junction light emitting device section 400 having a plurality of ultra-small LED elements. Referring to FIG. 3, a method of filling an insulator into a remaining portion of a plurality of ultra-small LED elements 211 in an LED layer including a very small LED element 211 is described. However, as described above, the present invention is not limited to filling the insulator in a part of the area of the LED layer, but may be formed in the form of a film on the ultra-small LED element 211 as shown in Fig. 4B.

Here, the insulator 301 is used in the LED layer is silica (SiO _2), tin oxide (SnO _2), titania (TiO _2), zirconia (ZrO _2), alumina (Al ₂ O ₃₎ or in combination of two or more As shown in FIG.

Type semiconductor layer 409 of the pn junction light emitting device unit 400 (for example, a thin film transistor) may be formed to connect a pn junction light emitting device unit 400 having an insulator formed thereon and a switch : Top, or top surface) can be removed.

Referring to FIG. 4D, the first electrode layer 413 may be formed on the p-n junction light emitting device part 400 in which the insulator formed on the upper surface of the p-type semiconductor layer 409 is removed. According to one embodiment, the first electrode layer may be formed of a switch layer. For example, the switch layer may include a plurality of switches 220 that apply power to the ultra-small LED elements 211 based on an input signal, and may include electrodes (or electrode wires) and / Or a data line.

Here, the switch 220 may be composed of a switch having an ultra-small and / or ultra-thin structure. According to one embodiment, the switch 220 may be a thin film transistor. At this time, the switch layer may be provided in the form of a film including a plurality of thin film transistors.

According to one embodiment, the switch layer 413 includes an electrode (e.g., an electrode plate) in contact with the p-type semiconductor layer 409 to connect a switch (e.g., a thin film transistor) and a plurality of ultra-small LED elements 211 .

The switch layer 413 can be described in detail below with reference to FIG.

Then, in order to form the second electrode layer and / or the fluorescent layer, the substrate 401 of the p-n junction light emitting device portion 400 having the switch layer 413 formed thereon can be rotated so as to face upward.

Referring to FIG. 4E, a part of the n-type semiconductor layer 405 may be exposed from the plurality of ultra-small LED elements 211 included in the p-n junction light emitting device unit 400. [ For example, when the substrate 401 and / or the p-n junction light emitting device section 400 includes the sacrificial layer 403 in the pn junction light emitting device section 400, the sacrificial layer 403 may be removed. Here, according to one embodiment of removing the substrate 401 and / or the sacrificial layer 403, a lift off method can be used.

Referring to FIG. 4F, the second electrode layer 415 may be formed on the p-n junction light emitting device portion 400 having the n-type semiconductor layer 405 of the plurality of ultra-small LED elements 211 exposed. According to one embodiment, the second electrode layer 415 can deposit a transparent electrode layer. Here, the transparent electrode layer 415 may be deposited so as to be in contact with the exposed surface of the n-type semiconductor layer 405.

According to one embodiment, the transparent electrode layer 415 may be formed of ITO (Indium Tin Oxide), TCO (Transparent conductive oxide), ZnO, and / or a transparent metal having conductivity. At this time, the thickness of the transparent electrode layer 415 may be 180 nm to 220 nm.

Referring to FIG. 4G, a fluorescent layer may be formed on the p-n junction light emitting device portion 400 on which the transparent electrode layer 415 is deposited. According to one embodiment, the phosphor may be formed on one surface of the transparent electrode layer 415 so as to express a specific color by filtering light emitted from the at least one ultra-small LED element 211 in a designated pattern.

According to one embodiment, the ultra-small LED elements 211 corresponding to each unit pixel can be disposed, and phosphors can be formed in each unit pixel. However, the present invention is not limited thereto, and one unit pixel may correspond to an area corresponding to one or more ultra-small LED elements 211. For example, referring to FIG. 3, when the LED module 110 includes four or more ultra-small LED elements (e.g., six ultra-small LED elements), six LED elements 211 corresponding to each ultra- It is obvious that a fluorescent layer containing four phosphors can be formed without being limited to forming a fluorescent layer containing four fluorescent substances.

According to the various embodiments, in the method of forming the fluorescent layer, not only the application of the fluorescent substance of the pattern specified on the upper surface of the transparent electrode layer 415, but also the application of the fluorescent layer of the film form including the fluorescent substance of the specified pattern .

A plurality of ultra small LED elements 211 are formed by stacking a switch layer 413 on the surface of the n-type semiconductor layer 405 in a state in which the pn junction light emitting device part 400 is laminated on the substrate 401 and is etched And the transparent electrode layer 415 is formed on the surface of the p-type semiconductor layer 409 from which the substrate 401 is removed, defective display caused by inverting the micro-LED element 211 can be prevented.

Even if the substrate 401 is removed by filling the space between the ultra-small LED elements with an iron overlay before the substrate 401 is removed from the pn junction light emitting device section 400 etched with the ultra-small LED element, the switch layer 413 And the transparent electrode layer 415 may be fixed upright (perpendicular to the switch layer 413 and the transparent electrode layer 415) without being inclined or inverted.

Referring to FIG. 4F, a transparent electrode layer 415 may be deposited on the p-n junction light emitting device portion 400 having the exposed surface of the n-type semiconductor layer 405 of the plurality of ultra-small LED elements 211. Here, the transparent electrode layer 415 can be deposited so as to be in contact with the exposed surface of the n-type semiconductor layer 405

1 to 3 and the following description, the ultra miniature LED module constituting the display is described. However, it is obvious that the ultra miniature LED module can be applied in various forms. According to an embodiment, when the first electrode layer and the second electrode layer of the ultra-small LED module are formed of the positive electrode and the negative electrode, the ultra-small LED module may be used as the light source.

5 illustrates a structure of an electrode layer formed on one surface of an LED layer and an LED layer according to an embodiment of the present invention.

According to various embodiments of the present invention, the display 150 may configure the display 150 based on the LED layer formed on the substrate 401 as illustrated in FIGS. 1-4. At this time, an electrode layer (for example, a switch layer 413) can be formed on one surface of the p-type semiconductor layer 409 of the LED layer (or the p-n junction light emitting device section 400).

According to one embodiment, the switch layer 413 includes an electrode 501 (e.g., an electrode) that is in contact with a p-type semiconductor layer 409 to connect a switch (e.g., a thin film transistor) Plate 501).

According to one embodiment, a plurality of thin film transistors may be arranged in a designated pattern in the switch layer 413, and at least one electrode 501 (or electrode plate 501) may be arranged on the basis of the arrangement of the thin film transistors . Here, one unit of the LED module 110 can be determined based on the arrangement of the thin film transistors, the area of the electrode plate 501, and the arrangement of the electrode plate 501.

According to an embodiment of the present invention, there is provided a method of manufacturing an ultra-small vertical type LED module, including: stacking an n-type semiconductor layer, an active layer and a p-type semiconductor layer on a substrate; Etching at least a part of the n-type semiconductor layer, the active layer and the p-type semiconductor layer to form a plurality of ultra-small LED elements; Forming an insulating layer on at least a part of the plurality of micro-LED devices; Forming a first electrode layer on the p-type semiconductor layer; Removing the substrate; Forming a second electrode layer on a surface of the n-type semiconductor layer from which the substrate is removed; And forming a fluorescent layer on one side of the second electrode layer.

According to various embodiments, each of the first electrode layer and the second electrode layer may be formed of a switch layer or a transparent electrode layer. For example, the first electrode layer may be formed of a switch layer, and the second electrode layer may be formed of a transparent electrode layer.

According to various embodiments, the first electrode layer may include a plurality of thin film transistors having a specified pattern and electrodes corresponding to each of the plurality of thin film transistors.

According to various embodiments, the electrode may be connected to two or more of the plurality of ultra-small LED elements.

According to various embodiments, the step of forming the fluorescent layer on one side of the second electrode layer may include: determining an area of the fluorescent material based on the area of the electrode; Forming a pattern using a plurality of types of phosphors based on the determined area of the phosphor; And forming the fluorescent layer based on the determined pattern.

According to various embodiments, the step of forming the first electrode layer on the p-type semiconductor layer may be formed of a film including a plurality of thin film transistors having a specified pattern and electrodes corresponding to each of the plurality of thin film transistors .

According to various embodiments, the step of forming the insulating layer on at least a part of the formed plurality of ultra-small LED elements may be to fill a space formed between the formed plurality of ultra-small LED elements.

According to an embodiment of the present invention, an ultra-small vertical type LED module manufactured by a method of manufacturing an ultra-small vertical type LED module according to FIG. 3 includes an n-type semiconductor layer; An active layer formed on the n-type semiconductor layer; A p-type semiconductor layer formed on the active layer; A first electrode layer formed on the p-type semiconductor layer; A second electrode layer formed on one surface of the n-type semiconductor layer; And a fluorescent layer formed on the second electrode layer.

According to an embodiment of the present invention, a micro-vertical type LED module includes: a plurality of ultra-small LED devices arranged in parallel with each other in a block and including a p-type semiconductor layer and an n-type semiconductor layer; And a first electrode layer formed on a surface of the P-type semiconductor layer of the micro-LED module and a second electrode layer formed on the n-type semiconductor layer representation, wherein p -Type semiconductor layers and the n-type semiconductor layers are arranged so that the directions of the micro-type semiconductor layers and the n-type semiconductor layers are equal to each other may be 80% or more.

Specifically, it is assumed that a plurality of the ultra-small LED elements have electrode layers (a first electrode layer and / or a second electrode layer) formed horizontally with the ground, and the ultra-small LED elements are arranged vertically or similar For example, preferably about 10 degrees, more preferably about 5 degrees).

In this case, when the p-type semiconductor layers of all the ultra-small LED elements are arranged farther from the earth direction than the n-type semiconductor layer, or when the n-type semiconductor layers are arranged farther from the earth direction than the p- Layer and the n-type semiconductor layer are arranged in the same direction.

In general, when arranging very small LED elements using conductive ink, or arranging very small LED elements using a linker, many of the plurality of very small LED elements are connected vertically or vertically similarly to the electrode layers as described above It can be fixed, tilted or lying down. In addition, a plurality of cases in which the directions of the p-type semiconductor layer and the n-type semiconductor layer can not be arranged in the same direction can be generated even if they are vertically or vertically connected to the electrode layer.

However, according to various embodiments of the present invention, among the total number of the plurality of micro LED devices arranged side by side as described above, the number of ultra-small LED elements in which the directions of the p-type semiconductor layer and the n- The p-type semiconductor layer and the n-type semiconductor layer may be arranged so that the directions of the p-type semiconductor layer and the n-type semiconductor layer are equal to each other.

According to various embodiments, an active layer may be included between the p-type semiconductor layer and the n-type semiconductor layer.

According to various embodiments, each of the first electrode layer and the second electrode layer may be formed of a switch layer or a transparent electrode layer. For example, the first electrode layer may be formed of a switch layer, and the second electrode layer may be formed of a transparent electrode layer.

According to various embodiments, the first electrode layer may include a plurality of thin film transistors having a specified pattern and electrodes corresponding to each of the plurality of thin film transistors.

According to various embodiments, each of the first electrode layer and the second electrode layer may include an electrode connected to two or more of the plurality of ultra-small LED elements.

According to various embodiments, a plurality of types of phosphors can be formed in a specified pattern based on the area of the electrode.

According to various embodiments, the first electrode layer may be formed of a film including a plurality of thin film transistors having a specified pattern and electrodes corresponding to each of the plurality of thin film transistors.

According to various embodiments, the spacing space between the plurality of ultra-small LED elements and the plurality of ultra-small LED elements may be filled with an insulator.

According to various embodiments, the p-type semiconductor layer and the n-type semiconductor layer may be arranged so that the directions of the p-type semiconductor layer and the n-type semiconductor layer are equal to each other.

According to an embodiment of the present invention, a micro-vertical type LED module includes: a first electrode layer; A plurality of ultra-small LED elements which are stacked in this order on an n-type semiconductor layer, an active layer and a p-type semiconductor layer on a substrate and are vertically spaced apart from each other on the substrate by etching; An insulating layer filled between the plurality of ultra-small LED elements; A first electrode layer formed on the insulating layer and the p-type semiconductor layer, the first electrode layer being electrically connected to the p-type semiconductor layer of at least a part of the plurality of ultra-small LED elements; A second electrode layer formed on the insulating layer from which the substrate is removed and on the n-type semiconductor layer, the second electrode layer being electrically connected to at least a part of the n-type semiconductor layer of the plurality of micro LED devices; And a fluorescent layer formed on the second electrode layer, wherein the plurality of ultra-small LED elements may be perpendicular to the first electrode layer and the second electrode layer.

According to various embodiments, each of the first electrode layer and the second electrode layer may be formed of a switch layer or a transparent electrode layer. For example, the first electrode layer may be formed of a switch layer, and the second electrode layer may be formed of a transparent electrode layer.

According to various embodiments, all of the ultra-small LED elements included in the plurality of vertically spaced small LED elements may be arranged such that the directions of the n-type semiconductor layer and the p-type semiconductor layer are the same.

According to various embodiments of the present invention, in etching a very small LED element in a pn junction light emitting element portion, by etching the pn junction element layer in various patterns by changing a pattern, It is possible to provide a display having an arrangement of very small LED elements of a complicated pattern.

According to various embodiments of the present invention, in order to construct a pixel of a display, by forming an electrode layer (for example, a switch layer) in a manufacturing process of a very small LED element without separating the very small LED elements from the substrate, The process of disposing can be omitted, and the cost can be reduced accordingly.

According to various embodiments of the present invention, the manufacturing process of the LED module can be simplified by partially merging the manufacturing process of the LED module without separating the ultra-small LED devices from the substrate in the process of manufacturing the ultra-small LED device.

The ultra-small LED module implemented as described above may be formed in a nano size. Therefore, it is not easy to arrange the ultra-small LED elements in consideration of the polarity of the individual ultra small LED elements in the module, and even if the LED module is formed in a bulk form including a plurality of single ultra small LED elements, The polarity of the LED module may be uneven or inclined to deteriorate the performance of the LED module or may be pointed out as a defect of various gauges or output devices including the LED module.

The miniature LED module and the method of manufacturing the same according to various embodiments of the present invention can be applied not only to the arrangement problem of the LED element due to the manufacture of the module including the LED element or the LED element of such a general size, It can be said that its effectiveness and significance are significant in solving the arrangement problem of LED devices.

While the present invention has been particularly shown and described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: Electronic device 150: Display
101, 103, 111, 113: 1 unit pixel 110: LED module
211: ultra-small LED element 220: switch
231, 233: Signal line 301: Insulator
303: transparent electrode layer 400: pn junction light emitting element portion
401: substrate 405: n-type semiconductor layer
407: active layer 409: p-type semiconductor layer
501: electrode plate

Claims (20)

Stacking an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate;
Etching at least a part of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer to form a plurality of ultra-small LED (light emitting diode) elements;
Forming an insulating layer between the plurality of micro-LED devices;
Forming a plurality of first electrode layers connecting a specified number of very small LED elements adjacent to each other on the p-type semiconductor layer in a specified pattern;
Removing the substrate;
Forming a second electrode layer on a surface of the n-type semiconductor layer from which the substrate is removed in a specified pattern; And
And forming a fluorescent layer on one surface of the second electrode layer,
Wherein each of the plurality of first electrode layers formed in the designated pattern functions as an ultra-small vertical type LED module of one unit pixel.
The method according to claim 1,
Wherein each of the first electrode layer and the second electrode layer is formed of a switch layer or a transparent electrode layer.

The method according to claim 1,
Wherein the first electrode layer includes a plurality of thin film transistors having a specified pattern and an electrode corresponding to each of the plurality of thin film transistors.
delete The method of claim 3,
The forming of the fluorescent layer on one side of the second electrode layer may include: determining an area of the fluorescent material based on the area of the electrode;
Forming a pattern using a plurality of types of phosphors based on the determined area of the phosphor; And
And forming the fluorescent layer on the basis of the determined pattern. ≪ RTI ID = 0.0 > 21. < / RTI >
The method according to claim 1,
The step of forming the first electrode layer on the p-type semiconductor layer includes a micro-vertical type LED module formed of a film including a plurality of thin film transistors having a specified pattern and electrodes corresponding to each of the plurality of thin film transistors Lt; / RTI >
The method according to claim 1,
Wherein the step of forming the insulating layer on at least a part of the plurality of micro LED devices comprises filling a space formed between the plurality of micro LED devices.
A plurality of ultra-small LED (light emitting diode) elements formed by sequentially stacking an n-type semiconductor layer, an active layer and a p-type semiconductor layer on a substrate and vertically spaced apart from each other on the substrate by etching;
An insulating layer filled between the plurality of ultra-small LED elements;
Type semiconductor layer of the plurality of micro-LED elements, the plurality of micro-LED elements being formed on the insulating layer and the p-type semiconductor layer, the plurality of micro-LED elements being electrically connected to the p- One electrode layer;
A second electrode layer formed on the insulating layer from which the substrate is removed and the n-type semiconductor layer, the second electrode layer being electrically connected to the n-type semiconductor layer of at least a part of the plurality of micro LED devices; And
And a fluorescent layer formed on the second electrode layer
Wherein the plurality of ultra miniature LED elements are perpendicular to the first electrode layer and the second electrode layer, and each of the plurality of first electrode layers formed in the designated pattern functions as an ultra-small vertical type LED module of one unit pixel ≪ / RTI >
9. The method of claim 8,
Wherein each of the first electrode layer and the second electrode layer is formed of a switch layer or a transparent electrode layer.
9. The method of claim 8,
Wherein the first electrode layer includes a plurality of thin film transistors having a specified pattern and an electrode corresponding to each of the plurality of thin film transistors.
delete 9. The method of claim 8,
And a plurality of types of phosphors are formed in a specified pattern based on the area of the phosphor determined by the area of the electrode.
9. The method of claim 8,
Wherein the first electrode layer is formed of a film including a plurality of thin film transistors having a specified pattern and electrodes corresponding to each of the plurality of thin film transistors.
delete 9. The method of claim 8,
Wherein at least 80% of the number of the ultra-small LED devices included in the plurality of ultra-small LED devices vertically spaced apart from each other is arranged so that the directions of the n-type semiconductor layer and the p- Contains a display. delete delete delete delete delete

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