CN105740564B - A kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model modeling - Google Patents
A kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model modeling Download PDFInfo
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Abstract
The present invention relates to a kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model modelings；Present invention is generally directed to the dose rate radiation effects of SOI MOS device, using macro model technology by device the rdaiation response characteristic under various different conditions be coupled to device it is non-radiative under original SPICE model on, the basic device model of element of rdaiation response is contained to be formed, predicts the rdaiation response characteristic of entire integrated circuit by way of calling directly this element model and system emulation later；Using the method can effective function and performance of the integrated circuit under the conditions of specific radiation designed by simulation, provide reference frame for anti-radiation SoC design, reduce flow number, greatly reduce cost, the quickening R&D cycle, improve efficiency.
Description
Technical field
The present invention designs the SPICE macros model establishing method more particularly to a kind of SOI metal-oxide-semiconductor of a kind of device radiation effect
Dose rate radiation SPICE macro model modeling.
Background technique
Silicon-on-insulator (Silicon On Insulator, SOI) technique, which refers to, introduces one in the substrate of conventional bulk silicon
Layer buried oxide layer (silica), to achieve the effect that device Fully dielectric isolation.Since SOI technology can eliminate Bulk CMOS electricity
The parasitic latch-up on road, and there is stronger anti-single particle and dose rate radiation ability, therefore it is obtained in anti-radiation field
More and more extensive concern is arrived.SPICE(Simulation Program for Integrated Circuit
Emphasis) be device design industry apply circuit-level simulation program the most universal, each software vendors provide Vspice,
The emulation core of the SPICE software of the different editions such as Hspice, Pspice, these softwares is similar, is used by beauty
The device SPICE simulation algorithm of University of California, the state branch school Berkeley exploitation.Wherein, main to provide for the device of SOI technology
General BSIMSOI model algorithm carries out SPICE analog simulation.
Mechanism about semiconductor devices dose rate radiation effect is since instantaneous ionization pulse is radiated in semiconductor material
Electron-hole pair is excited in material, these superfluous photo-generated carriers will generate instantaneous photoelectric current during being collected by device.
When radiation dose rate increases to a certain extent, biggish instantaneous photoelectric current would potentially result in device breakdown and failure.Therefore, closely
Domestic and international hot spot is had become about the SPICE macro model technical research of device dose rate radiation effect over year.So-called device radiation
The SPICE macro model of effect is exactly to be coupled rdaiation response characteristic of the device under various different conditions using macro model technology
Onto original SPICE model of the device under non-radiative, the basic device model of element of rdaiation response, Zhi Houzhi are contained to be formed
It connects and calls this element model, the rdaiation response characteristic of entire integrated circuit is predicted by way of system emulation.Utilize this side
Method can effective function and performance of the integrated circuit under the conditions of specific radiation designed by simulation, set for radiation hardened integrated circuit
Meter provides reference frame, reduces flow number, greatly reduces cost, accelerates the R&D cycle, improves efficiency.
Meanwhile basic device model of element used will directly affect the precision of emulation when emulation, one is accurate and compatible
Property good device radiation effect model will guarantee that radiation hardened integrated circuit designs successful key factor.Therefore, in order to protect
The authenticity and reliability for demonstrate,proving the emulation of integrated circuit radiation effect, just must first guarantee established basic device radiation effect
The accuracy of SPICE macro model.Currently, be directed to the SPICE macros model establishing method of SOI MOS device dose rate radiation effect
Research mainly faces two problems.One be specific dimensions deep-submicron SOI technology parameter uncertain problem.It is based on
The sensibility of SOI technology line application background, the technique principle of secrecy for being commercialized Foundry factory and different size deep-submicrons
The greatest differences of structure and parameter between SOI technology, so that directly obtaining whole, accurate technological parameters from technique manufacturer becomes
It is very difficult.In this case, the prior art is usually according to known some processes parameter to complicated device architecture
It carries out simplifying processing, and idealization estimation is carried out to each section technological parameter.This rough Method of Paramater Approximate Analysis will generate pole
Big error, so that the simulation accuracy for the device radiation effect SPICE macro model established on this basis is lower.Another problem
It is that the existing research for SOI MOS device dose rate radiation effect is also far from enough.Under normal conditions, people only consider
The dose rate radiation macroscopic view response characteristic of transistor, and it is inadequate for the microcosmic response investigations of device inside different zones, therefore
The radiation effect SPICE macro model established is not accurate enough and complete, cannot sufficiently reflect under device arbitrary operational state
Dose rate radiation response characteristic.For example, what current most popular Honeywell Corp. USA was proposed based on 0.15um SOI technology
The SPICE macro model of MOSFET dose rate radiation effect mainly considers the parasitic source/body of reflection transistor macroscopic view response characteristic
Diode and the influence of leakage/body diode.It is emulated using this model it is found that SOI MOS device is felt under dose rate radiation
Raw photoelectric current peak value and dosage rate size, device collect body the sum of (depletion region to diffusion region) volume and directly proportional, this conclusion
It is consistent with the theory analysis that device radiates macroscopic view response.However, as shown in Figs. 1-2, it has been found that when the dosage rate of radiation increases
When to a certain extent, the no longer proportional increase of the peak point current of source terminal, but there is apparent depressed phenomenon, this phenomenon
It is unaccountable with the parasitic diode model of Honeywell.In fact, this is mainly by triode parasitic in device
(BJT) caused by, when higher dose rate radiation, the microcosmic potential change of device inside different zones causes parasitic BJT to open,
Source electrode starts to collect hole, therefore the electric current of a negative sense has been superimposed on source electrode, so that its peak point current is recessed.Thus
As it can be seen that in order to establish more accurate, complete and can sufficiently reflect rdaiation response characteristic under device arbitrary operational state
SOI MOS device dose rate radiation effect SPICE macro model, it is necessary to respectively to the radiation macroscopic view response characteristic of device and not
Microcosmic response with region carries out fully analysis and modeling.
Summary of the invention
The present invention in order to overcome the deficiencies of the prior art, provides a kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model and builds
Modulus method, to be formed relatively accurate, complete and can sufficiently reflect that dose rate radiation is rung under SOI MOS device arbitrary operational state
The basic device model of element of characteristic is answered, is predicted by way of calling directly model of element and system emulation later entire
The rdaiation response characteristic of integrated circuit provides reference frame for radiation hardened integrated circuit design.
In order to solve the above technical problems, technical scheme is as follows:
A kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model modeling, it is characterised in that the following steps are included:
1) using the SOI technology PDK file of specific dimensions and BSIM model as standard, known device architecture and portion are based on
Divide existing technological parameter to carry out reverse link parameter extraction, obtains all unknown process parameter values for characterizing SOI MOS device；
2) SOI MOS device 3D model is established based on the obtained technological parameter of step 1), and to the SOI MOS established
Device 3D model carries out the TCAD emulation under various different components states, different radiation conditions, obtains simulation result；
3) according to the simulation result of step 2), analyze comprehensively macroscopic view of SOI MOS device under the conditions of dose rate radiation and
Microcosmic response characteristic obtains all ghost effect mechanism of SOI MOS device；
4) the ghost effect situation of the SOI MOS device obtained based on step 3), by calculating and fitting obtains SOI MOS
Device is respectively in OFF state (OFF:Vg=0, Vd=VDD) and ON state (ON:Vg=VDD, Vd=0) the dose rate radiation effect under two states
Peak point current is answered to parse solution's expression；
5) a variety of ghost effect superpositions are carried out to dose rate radiation effect peak point current analytic solutions on the basis of step 4)
Gauss time domain extension, obtain dose rate radiation effect time domain of the SOI MOS device respectively under OFF state and ON state two states
Model analyzing solution's expression；Then, full voltage extension then to dose rate radiation effect Model in Time Domain analytic solutions at this time is carried out,
SOI MOS device is obtained in any operating voltage (Vg=VA, Vd=VB) under dose rate radiation effect Model in Time Domain analytic solutions expression
Formula；
Or full voltage extension is carried out to dose rate radiation effect peak point current analytic solutions on the basis of step 4), it obtains
SOI MOS device is in any operating voltage (Vg=VA, Vd=VB) under dose rate radiation effect peak point current analytic solutions expression formula；
Then, the Gauss time domain for then to dose rate radiation effect peak point current analytic solutions at this time carrying out a variety of ghost effect superpositions expands
Exhibition, obtains SOI MOS device in any operating voltage (Vg=VA, Vd=VB) under dose rate radiation effect Model in Time Domain analytic solutions
Expression formula；
6) the dose rate radiation effect Model in Time Domain by SOI MOS device obtained in step 5) under any operating voltage
Analytic solutions are coupled on the original SPICE model that radiation is not added, obtain the SOI MOS device dosage rate that can finally call directly
The SPICE macro model of radiation effect.
The Vg refers to that grid (gate) voltage of SOI MOS device, Vd refer to drain electrode (drain) voltage of SOI MOS device,
Supply voltage value needed for VDD refers to SOI MOS device.
The SOI technology of the specific dimensions refers to deep-submicron SOI technology, including 0.5um, 0.35um, 0.18um,
The SOI technology of 0.15um, 0.13um equidimension.
If whole, the accurate technological parameter of selected SOI technology line has all obtained from technique manufacturer, can be omitted
Step 1) and directly carry out the SOI MOS device 3D modeling in step 2).
The advantages of the present invention over the prior art are that:
The present invention improves existing modeling method, proposes a kind of SOI MOS device dose rate radiation effect
SPICE macro model establish method.It is emulated by the device TCAD of various different components states, different radiation conditions and complete
Face ground effect analysis, whole ghost effect analytic solutions of the available SOI MOS device under dose rate radiation, later using macro
Modelling technique by all ghost effects of the device under dose rate radiation influence to be respectively coupled to it is non-radiative under original SPICE mould
In type, the SPICE Macro to predict entire integrated circuit rdaiation response characteristic can be obtained.It can be with using the method
Function and performance of the integrated circuit under the conditions of specific radiation designed by effective simulation provide for radiation hardened integrated circuit design
Reference frame is accelerated the R&D cycle, is improved efficiency.Simultaneously as the invention proposes a kind of reverse process parameter extracting method,
Accurate whole technological parameters can be obtained on the basis of existing part specific dimensions SOI technology parameter, improve device
Part simulation accuracy.In addition, the both macro and micro response characteristic in the invention for SOI MOS device under the conditions of dose rate radiation
It is studied in detail respectively, has obtained more accurate, comprehensive device parasitic effect analytic modell analytical model, improved device dosage rate spoke
The modeling accuracy of effect SPICE macro model is penetrated, can sufficiently reflect the dose rate radiation under SOI MOS device arbitrary operational state
Response characteristic.
Detailed description of the invention
Fig. 1 is current characteristics analogous diagram of the 0.5umSOI technique NMOS device under the radiation of median dose rate；
Fig. 2 is current characteristics analogous diagram of the 0.5umSOI technique NMOS device under the radiation of higher dosage rate；
Fig. 3 is flow chart of the invention；
Fig. 4 is the simulation comparison I in the present invention after the SOI NMOS device reverse process parameter extraction of two kinds of sizesD-VGIt is bent
Line schematic diagram；
Fig. 5 is the simulation comparison I in the present invention after the SOI PMOS device reverse process parameter extraction of two kinds of sizesD-VGIt is bent
Line schematic diagram；
Fig. 6 is the structural schematic diagram in the present invention for the SOI NMOS device Detached separate type trap contact of emulation；
Fig. 7 is the structural schematic diagram of the embedded trap contact of SOI NMOS device Embedded in the present invention for emulation；
Fig. 8 is the SOI NMOS device ring gate layout structure schematic diagram in the present invention for emulation；
Fig. 9 is the model after the completion of the SPICE macro model of SOI NMOS device dose rate radiation effect in the present invention is established
Proof diagram, wherein simulated temperature 300K, point diagram are device rdaiation response current curve, and line chart is its SPICE macro model verifying knot
Fruit；
Figure 10 is the model after the completion of the SPICE macro model of SOI NMOS device dose rate radiation effect in the present invention is established
Proof diagram, wherein simulated temperature 378K, point diagram are device rdaiation response current curve, and line chart is its SPICE macro model verifying knot
Fruit.
Specific embodiment
Method of the invention be suitable for deep-submicron SOI technology MOS device, mainly include 0.5um, 0.35um,
The SOI technology of 0.18um, 0.15um, 0.13um equidimension.Below by taking 0.5um technique as an example, flow chart as shown in connection with fig. 3,
Illustrate specific implementation process of the invention.
The 0.5um SOI technology line of certain technique manufacturer is selected first and obtains its PDK file and BSIM model, is passed through later
A kind of circuit SPICE model emulation device under the U.S. Hspice(Synopsys house flag) simulation mode obtain for reverse process
Standard control I needed for parameter extractionD-VGCurve.Known device architecture, existing some processes parameter are then based on (as served as a contrast
Base thickness degree, silicon film thickness, buried oxide layer thickness, substrate uniform doping concentration, N/P well region doping depth etc.) and each unknown parameter
It establishes the 3D model of SOI MOS device and carries out TCAD emulation, simulation result and standard control curve are compared.By anti-
The multiple value for constantly successively changing each unknown technological parameter and the comparison for carrying out TCAD emulation and standard curve, until two kinds of curves
Until coinciding, finally obtain it is all it is unknown for characterizing SOI MOS device process parameter value (such as source/drain electrode end from
Son injection depth, injection peak concentration, injection Gaussian Profile coefficient, the ion implanting depth in LDD shallow-layer doped structure area, injection
Peak concentration, injection Gaussian Profile coefficient, the structure etc. of LOCOS oxygen isolation areas).Fig. 4-5 is respectively the SOI of N-type and p-type
TCAD emulation and standard curve comparison diagram after MOS device reverse process parameter extraction.
After the completion of technological parameter extracts, the 3D model of SOI MOS device is established, and carries out different components state, no to it
With the TCAD emulation under radiation condition.It among these mainly include different device 2D domain structure (Detached as shown in FIG. 6
The contact of separate type trap, the contact of Embedded shown in Fig. 7 embedded trap and ring gate layout structure shown in Fig. 8), different components
Emulation under the conditions of size, different temperatures, different operating voltage, different radiation Gaussian waveforms and different radiation dose rates etc..
Both macro and micro response characteristic of the SOI MOS device under dose rate radiation is analyzed comprehensively according to these simulation results later, is obtained
Device all ghost effect mechanism (including device parasitic diode and parasitism BJT effect, and in specific temperature, specific
The Physical Mechanism of the microcosmic ghost effect of device excited under the conditions of domain structure, specific radiation dosage rate etc.).
Later, based on the ghost effect situation analyzed under the conditions of obtained SOI MOS device dose rate radiation above, in conjunction with
Both macro and micro Physical Mechanism therein constructs its peak photocurrent equation group；Meanwhile it being emulated and being tied according to the 3D of SOI MOS device
Fruit carries out parameter calculating and fitting, obtains the fitting formula of all unknown parameters in equation group, to obtain SOI MOS device point
Not in OFF state (OFF:Vg=0, Vd=VDD) and ON state (ON:Vg=VDD, Vd=0) the dose rate radiation effect peak value under two states
Electric current parses inducing diaphoresis and reaches formula.Analytic solutions at this time only give the calculating for the maximum current value that device generates under radiation condition
Formula.However, since the dose rate radiation response of SOI MOS device is the time domain being superimposed by a variety of ghost effects in Gaussian Profile
Characteristic, and the response wave shape that every kind of ghost effect is inducted all has different Gaussian distribution feature and Gauss feature value, because
This needs to carry out peak point current analytic solutions achieved above the Gauss time domain extension of multiparasitization effect superposition, to obtain SOI
The MOS device dose rate radiation effect Model in Time Domain analytic solutions expression formula under OFF state and ON state respectively.In addition, in order to improve
The versatility of established model, so as to reflect SOI MOS device in any operating voltage (Vg=VA, Vd=VB) under dosage rate
Rdaiation response carries out full voltage extension to the above device Model in Time Domain analytic solutions, obtains SOI in the way of linear interpolation
Dose rate radiation effect analytic solutions of the MOS device under any operating voltage.
Finally, using macro model technology, it will be derived above in a manner of the equivalent sub-circuit of voltage controlled current source device
Various ghost effect analytic solutions of SOI MOS device under the conditions of dose rate radiation be coupled to it is non-radiative under initial devices
On SPICE model, the SPICE macro model for the SOI MOS device dose rate radiation effect that can finally call directly is obtained.Fig. 9-10
The model proof diagram after the completion of this SPICE macro model is established is given, wherein point diagram is the current curve of device rdaiation response, line
Figure is its SPICE macro model simulation results.
Claims (6)
1. a kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model modeling, it is characterised in that include the following steps:
SOI MOS device 3D model is established according to the complete process parameter of characterization SOI MOS device, and to the SOI that foundation obtains
The TCAD that MOS device 3D model carries out under various different components states, different radiation conditions emulates to obtain simulation result, described imitative
True result includes different device 2D domain structures, different components size, different temperatures, different operating voltage, different radiation height
Emulation under the conditions of this waveform and different radiation dose rates；
According to the simulation result of step 1), both macro and micro of SOI MOS device under the conditions of dose rate radiation is analyzed comprehensively and is rung
Characteristic is answered, all ghost effect mechanism of SOI MOS device are obtained；The ghost effect mechanism include device parasitic diode and
Parasitic BJT effect, and the device excited under the conditions of specific temperature, specific domain structure, specific radiation dosage rate are microcosmic
The Physical Mechanism of ghost effect；
Ghost effect situation based on the SOI MOS device that step 2) obtains, by calculating and fitting obtains SOI MOS device point
Dose rate radiation effect peak point current not under OFF state and ON state two states parses solution's expression；
On the basis of step 3) to the SOI MOS device dose rate radiation effect peak point current analytic solutions under OFF state and ON state into
The Gauss time domain extension of row a variety of ghost effects superposition obtains SOI MOS device respectively under OFF state and ON state two states
Dose rate radiation effect Model in Time Domain parses solution's expression；
Full voltage is carried out to the dose rate radiation effect Model in Time Domain analytic solutions under OFF state and ON state again on the basis of step 4)
Extension, obtains dose rate radiation effect Model in Time Domain analytic solutions expression formula of the SOI MOS device under any operating voltage；
By dose rate radiation effect Model in Time Domain analytic solutions of the SOI MOS device obtained in step 5) under any operating voltage
It is coupled on the original SPICE model that radiation is not added, obtains the SOI MOS device dose rate radiation effect that can finally call directly
The SPICE macro model answered.
2. a kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model modeling, it is characterised in that include the following steps:
SOI MOS device 3D model is established according to the complete process parameter of characterization SOI MOS device, and to the SOI that foundation obtains
The TCAD that MOS device 3D model carries out under various different components states, different radiation conditions emulates to obtain simulation result, described imitative
True result includes different device 2D domain structures, different components size, different temperatures, different operating voltage, different radiation height
Emulation under the conditions of this waveform and different radiation dose rates；
According to the simulation result of step 1), both macro and micro of SOI MOS device under the conditions of dose rate radiation is analyzed comprehensively and is rung
Characteristic is answered, all ghost effect mechanism of SOI MOS device are obtained；The ghost effect mechanism include device parasitic diode and
Parasitic BJT effect, and the device excited under the conditions of specific temperature, specific domain structure, specific radiation dosage rate are microcosmic
The Physical Mechanism of ghost effect；
Ghost effect situation based on the SOI MOS device that step 2) obtains, by calculating and fitting obtains SOI MOS device point
Dose rate radiation effect peak point current not under OFF state and ON state two states parses solution's expression；
On the basis of step 3) to the SOI MOS device dose rate radiation effect peak point current analytic solutions under OFF state and ON state into
The extension of row full voltage obtains dose rate radiation effect peak point current parsing inducing diaphoresis of the SOI MOS device under any operating voltage
Up to formula；
A variety of parasitisms are carried out to the dose rate radiation effect peak point current analytic solutions of SOI MOS device again on the basis of step 4)
The Gauss time domain extension of effect superposition, obtains dose rate radiation effect time-domain mode of the SOI MOS device under any operating voltage
Type analytic solutions expression formula；
By dose rate radiation effect Model in Time Domain analytic solutions of the SOI MOS device obtained in step 5) under any operating voltage
It is coupled on the original SPICE model that radiation is not added, obtains the SOI MOS device dose rate radiation effect that can finally call directly
The SPICE macro model answered.
3. a kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model modeling according to claim 1 or 2, feature exist
In: the complete process parameter that SOI MOS device is characterized described in step 1) is by with the SOI technology PDK text of specific dimensions
Part and BSIM model are standard, have technological parameter based on known device architecture and part and carry out reverse process parameter extraction
It obtains；The SOI technology of the specific dimensions refers to deep-submicron SOI technology, including 0.5um, 0.35um, 0.18um,
The SOI technology of 0.15um, 0.13um size.
4. a kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model modeling according to claim 3, it is characterised in that:
It obtains in such a way that Hspice is simulated for standard control I needed for reverse process parameter extractionD-VGCurve.
5. a kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model modeling according to claim 1 or 2, feature exist
In: OFF state described in step 3) refers to OFF state, in which: Vg=0, Vd=VDD；The ON state refers to ON state, in which: Vg=VDD, Vd=
0；The Vg refers to that the grid voltage of SOI MOS device, Vd refer to that the drain voltage of SOI MOS device, VDD refer to SOI MOS device institute
The supply voltage value needed.
6. a kind of SOI metal-oxide-semiconductor dose rate radiation SPICE macro model modeling according to claim 1 or 2, feature exist
In: any operating voltage refers to: Vg=VA, Vd=VB；The Vg refers to that the grid voltage of SOI MOS device, Vd refer to SOI MOS
The drain voltage of device, VA、VBRefer to any voltage value.
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| CN111291480B (en) * | 2020-01-21 | 2024-10-18 | 中国科学院微电子研究所 | Modeling method and device for MOS device dose rate model |
| CN111400833B (en) * | 2020-03-12 | 2022-11-18 | 东南大学 | Verilog-A macro model modeling method for thermal wind speed sensor |
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| CN102081686A (en) * | 2010-12-21 | 2011-06-01 | 上海集成电路研发中心有限公司 | Modeling method of MOS (Metal Oxide Semiconductor) transistor process corner SPICE (Simulation Program for Integrated Circuits Emphasis) model |
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| CN102375896A (en) * | 2010-08-12 | 2012-03-14 | 中国科学院微电子研究所 | SOINMOS total dose irradiation modeling method |
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| CN102176215A (en) * | 2011-03-24 | 2011-09-07 | 中国科学院上海微系统与信息技术研究所 | Modeling method for SPICE model series of SOI (Silicon on Insulator) field effect transistor |
| CN102789530A (en) * | 2012-07-17 | 2012-11-21 | 中国科学院微电子研究所 | Modeling Method of SOI MOS Device |
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