CN105738704A - 接触电阻的测量方法及其测量装置 - Google Patents
接触电阻的测量方法及其测量装置 Download PDFInfo
- Publication number
- CN105738704A CN105738704A CN201610316308.6A CN201610316308A CN105738704A CN 105738704 A CN105738704 A CN 105738704A CN 201610316308 A CN201610316308 A CN 201610316308A CN 105738704 A CN105738704 A CN 105738704A
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- CN
- China
- Prior art keywords
- contact resistance
- short circuit
- scanning element
- photogenic voltage
- kelvin
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000000523 sample Substances 0.000 claims abstract description 29
- 238000005259 measurement Methods 0.000 claims description 33
- 230000007246 mechanism Effects 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 238000012986 modification Methods 0.000 claims description 3
- 230000004048 modification Effects 0.000 claims description 3
- 230000001360 synchronised effect Effects 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 6
- 238000009659 non-destructive testing Methods 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003245 coal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
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- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610316308.6A CN105738704B (zh) | 2016-05-12 | 2016-05-12 | 接触电阻的测量方法及其测量装置 |
Applications Claiming Priority (1)
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CN201610316308.6A CN105738704B (zh) | 2016-05-12 | 2016-05-12 | 接触电阻的测量方法及其测量装置 |
Publications (2)
Publication Number | Publication Date |
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CN105738704A true CN105738704A (zh) | 2016-07-06 |
CN105738704B CN105738704B (zh) | 2019-03-05 |
Family
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CN201610316308.6A Active CN105738704B (zh) | 2016-05-12 | 2016-05-12 | 接触电阻的测量方法及其测量装置 |
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CN (1) | CN105738704B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107703364A (zh) * | 2017-11-27 | 2018-02-16 | 京东方科技集团股份有限公司 | 异方性导电胶膜连接电阻的测量装置、方法及集成电路 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0387672A (ja) * | 1989-08-31 | 1991-04-12 | Toshiba Corp | 接点の診断装置 |
JP2000111597A (ja) * | 1998-10-07 | 2000-04-21 | Advanced Display Inc | 液晶表示装置の検査方法および修復方法ならびに液晶表示装置の検査装置 |
CN101900785A (zh) * | 2009-09-28 | 2010-12-01 | 新奥光伏能源有限公司 | 测量太阳能电池面电阻及接触电阻的方法及其测量工具 |
CN102662096A (zh) * | 2012-05-25 | 2012-09-12 | 南昌航空大学 | 一种半导体材料表面光电压的测量方法 |
CN105048962A (zh) * | 2015-07-06 | 2015-11-11 | 广西民族师范学院 | 一种光伏电池参数测试系统 |
CN105510717A (zh) * | 2015-12-25 | 2016-04-20 | 中国科学院微电子研究所 | 一种获取平面型器件的接触电阻的方法 |
-
2016
- 2016-05-12 CN CN201610316308.6A patent/CN105738704B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0387672A (ja) * | 1989-08-31 | 1991-04-12 | Toshiba Corp | 接点の診断装置 |
JP2000111597A (ja) * | 1998-10-07 | 2000-04-21 | Advanced Display Inc | 液晶表示装置の検査方法および修復方法ならびに液晶表示装置の検査装置 |
CN101900785A (zh) * | 2009-09-28 | 2010-12-01 | 新奥光伏能源有限公司 | 测量太阳能电池面电阻及接触电阻的方法及其测量工具 |
CN102662096A (zh) * | 2012-05-25 | 2012-09-12 | 南昌航空大学 | 一种半导体材料表面光电压的测量方法 |
CN105048962A (zh) * | 2015-07-06 | 2015-11-11 | 广西民族师范学院 | 一种光伏电池参数测试系统 |
CN105510717A (zh) * | 2015-12-25 | 2016-04-20 | 中国科学院微电子研究所 | 一种获取平面型器件的接触电阻的方法 |
Non-Patent Citations (1)
Title |
---|
沈洲: "高方块电阻发射区单晶硅太阳电池的制备与性能的研究", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107703364A (zh) * | 2017-11-27 | 2018-02-16 | 京东方科技集团股份有限公司 | 异方性导电胶膜连接电阻的测量装置、方法及集成电路 |
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CN105738704B (zh) | 2019-03-05 |
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Effective date of registration: 20231008 Address after: 201400 Nanqiao Zhenjianghai Economic Park, Fengxian District, Shanghai Patentee after: GCL SYSTEM INTEGRATION TECHNOLOGY Co.,Ltd. Patentee after: GCL INTEGRATION TECHNOLOGY (SUZHOU) Co.,Ltd. Patentee after: Wuhu GCL Integrated New Energy Technology Co.,Ltd. Address before: Room 125, building 2, No.58, Zhonghui Road, Suzhou Industrial Park, Suzhou, Jiangsu 215000 Patentee before: SUZHOU GCL SYSTEM INTEGRATION TECHNOLOGY INDUSTRIAL APPLICATION RESEARCH INSTITUTE Co.,Ltd. Patentee before: GCL INTEGRATION TECHNOLOGY (SUZHOU) Co.,Ltd. Patentee before: GCL SYSTEM INTEGRATION TECHNOLOGY Co.,Ltd. |