CN105734674A - Epitaxy generation structure and generation method thereof - Google Patents
Epitaxy generation structure and generation method thereof Download PDFInfo
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- CN105734674A CN105734674A CN201410740951.2A CN201410740951A CN105734674A CN 105734674 A CN105734674 A CN 105734674A CN 201410740951 A CN201410740951 A CN 201410740951A CN 105734674 A CN105734674 A CN 105734674A
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Abstract
The invention provides an epitaxy generation structure and a generation method thereof. The epitaxy generation structure comprises a substrate, multiple seeds which are arranged on the surface of the substrate in an array form, multiple nanometer columns which are longitudinally arranged on the seeds, and a thin film which horizontally covers the upper surfaces of the multiple nanometer columns so that a plane is formed. The epitaxy generation structure and its generation method reduce epitaxy defect density.
Description
Technical field
The invention relates to a kind of brilliant generating structure of heap of stone and generation method thereof, espespecially a kind of of heap of stone brilliant generating structure being applicable to gallium nitride (GaN) and method.
Background technology
In the prior art, heterogeneous substrate (such as Sapphire, Si etc.) lattice paprmeter and coefficient of thermal expansion difference necessarily affect epitaxial structure quality, cause defect and the stress of epitaxial layer, and stress can cause silicon wafer warpage further, affects component technology degree of accuracy.For Si substrate, its with GaN the lattice also existed up to 16.2% do not mate, the unfavorable factor such as high reaction activity between the coefficient of thermal expansion difference of 113% and Si and nitrogen (N) atom.Additionally, when GaN crystalline substance of heap of stone is created on silicon substrate, its GaN can exist more than 109cm-2Defect concentration (highdefectdensity), namely every square centimeter exist more than 109Individual defect.
Summary of the invention
In order to solve above-mentioned shortcoming and defect, it is an object of the invention to provide a kind of brilliant generating structure of heap of stone.
The present invention also aims to provide the generation method of above-mentioned brilliant generating structure of heap of stone.The of heap of stone brilliant generating structure of the present invention and generation method thereof can reduce brilliant defect concentration of heap of stone.
The present invention provides a kind of brilliant generating structure of heap of stone, it is adaptable to the of heap of stone brilliant generating structure of GaN, and brilliant generating structure of heap of stone comprises: substrate；Multiple crystal seeds, arrange and are arranged at the surface of substrate with array；Multiple nano-pillar, are longitudinally disposed on above-mentioned crystal seed respectively；And thin film, level is covered in the upper surface of multiple nano-pillar to form plane.
According to brilliant generating structure of heap of stone of the present invention, above-mentioned crystal seed is aluminium nitride.
According to brilliant generating structure of heap of stone of the present invention, above-mentioned nano-pillar and thin film are gallium nitride.
According to brilliant generating structure of heap of stone of the present invention, the length of above-mentioned nano-pillar is 50nm-150nm；Width is 100-300nm.
According to brilliant generating structure of heap of stone of the present invention, above-mentioned spacing between the crystal seed of array arrangement is for 100-300nm.
According to brilliant generating structure of heap of stone of the present invention, above-mentioned film thickness is 3-4 μm or 3-5 μm.
According to brilliant generating structure of heap of stone of the present invention, wherein, aforesaid substrate is silicon substrate, sapphire substrate, gallium nitride base board or silicon carbide substrate.
The present invention provides a kind of generation method of brilliant generating structure of heap of stone, it is adaptable to the of heap of stone brilliant of GaN generates, and the method comprises: provide silicon substrate；This silicon substrate arranges aln layer, and after utilizing soft nano impression；Utilize strong acid etching aln layer, make aln layer be formed with multiple crystal seeds of array arrangement；Polycrystalline growing of heap of stone is utilized to make GaN longitudinally generate multiple nano-pillar on above-mentioned crystal seed；And utilize polycrystalline growing of heap of stone to make GaN laterally generate thin film；Wherein, thin film level is covered in the upper surface of multiple nano-pillar to form plane.
Generation method according to brilliant generating structure of heap of stone of the present invention, above-mentioned strong acid can adopt Fluohydric acid. to realize.
Generation method according to brilliant generating structure of heap of stone of the present invention, aforesaid substrate is silicon substrate, sapphire substrate, gallium nitride base board or silicon carbide substrate.
Generation method according to brilliant generating structure of heap of stone of the present invention, with the spacing between the above-mentioned crystal seed of array arrangement for 100-300nm.
The present invention takes to generate molecular beam epitaxy with low temperature, and array crystal seed of arranging in pairs or groups makes GaN generate nano-pillar on a silicon substrate, can be reduced by the space between GaN nano-pillar and not mate produced stress because of lattice, the thickness of GaN film can be increased thus, improve the defect density existed in prior art.
Accompanying drawing explanation
Figure 1A is the schematic diagram of the present invention brilliant generating structure of heap of stone；
Figure 1B is the substrate 101 top view with crystal seed 102 of the present invention brilliant generating structure of heap of stone；
Fig. 1 C is that the present invention builds the substrate of brilliant generating structure and the top view of nano-pillar；
Fig. 2 A is the flow chart of the generation method of the present invention brilliant generating structure of heap of stone；
Fig. 2 B is the schematic diagram after aln layer etching；
Fig. 2 C is the schematic diagram that GaN nano-pillar is longitudinally created on crystal seed；
Fig. 2 D is that GaN film is laterally created on the schematic diagram in GaN nano-pillar；
Fig. 3 A is the spectrogram that the present invention utilizes that light excites fluorescence method to measure；
Fig. 3 B is the spectrogram that the present invention utilizes that light excites fluorescence method to measure at different ambient temperatures.
Main Reference label declaration:
100 brilliant generating structuries of heap of stone
101 substrates
102 crystal seeds
103 nano-pillar
104 thin film
B bottom
T upper surface
S201～S204 step.
Detailed description of the invention
Have more completely for the technology contents making the present invention use, goal of the invention and effect of reaching thereof and clearly disclose, existing the present invention being carried out described further below, and seeing also accompanying drawing and Main Reference label declaration.
Embodiment 1
Refer to the schematic diagram that Figure 1A, Figure 1A are the present invention brilliant generating structure of heap of stone.In the present embodiment, its structure is the of heap of stone brilliant generating structure of GaN, and brilliant generating structure 100 of heap of stone comprises: substrate 101, multiple crystal seed 102, multiple nano-pillar 103 and thin film 104.
It should also be noted that in the present embodiment, substrate 101 is realized by silicon (Si) substrate, sapphire substrate, gallium nitride base board or silicon carbide substrate.
Substrate 101 is arranged at the bottom B of generating structure 100 of heap of stone brilliant, and then, crystal seed 102 arrange with array and is arranged at the surface of substrate 101, please refer to the top view of the substrate that Figure 1B, Figure 1B are the present invention brilliant generating structure of heap of stone and crystal seed.Therefore, in the present embodiment, crystal seed 102 has the space of systematicness.
Top view please refer to the substrate that Fig. 1 C, Fig. 1 C is the present invention brilliant generating structure of heap of stone and nano-pillar.In the present invention, crystal seed 102 is realized by aluminium nitride (AlN), and the spacing between the crystal seed 102 of array arrangement is 100-300nm.Then, nano-pillar 103 is longitudinally disposed on crystal seed 102 respectively, makes the long limit of nano-pillar 103 be substantially perpendicular to substrate 101, and the width of nano-pillar 103 is 100-300nm.In sum, because crystal seed 102 has the space existence of systematicness, so also having the space of systematicness between nano-pillar 103.
Finally, thin film 104 is covered in the upper surface T of nano-pillar 103 along horizontal H, to form plane, in the present embodiment, its nano-pillar 103 is realized by GaN with thin film 104, and the length of nano-pillar 103 is 50-150nm, and the thickness of thin film 104 is 3-4 μm or 3-5 μm.
It should also be noted that due to the space between nano-pillar 103 with systematicness, therefore the stress that can reduce thin film 104 produces, it is to avoid thin film 104 stress produces to break.
Then please refer to the flow chart of the generation method that Fig. 2 A and Fig. 2 B, Fig. 2 A is the present invention brilliant generating structure of heap of stone, Fig. 2 B is the schematic diagram after aln layer etching, and the method generates suitable in the of heap of stone brilliant of GaN in the present invention, and the method comprises the steps of
Step S201: silicon substrate is provided；
Step S202: aln layer is set on this silicon substrate, and utilizes strong acid etching aln layer, make aln layer be formed with multiple crystal seeds of array arrangement；In the present embodiment, strong acid is realized by Fluohydric acid. (HF)；
Step S203: utilizing polycrystalline growing of heap of stone to make GaN longitudinally generate multiple GaN nano-pillar on crystal seed, referring to Fig. 2 C, Fig. 2 C is the schematic diagram that GaN nano-pillar is longitudinally created on crystal seed；And
Step S204: utilize polycrystalline growing of heap of stone to make GaN laterally generate GaN film；Wherein, GaN film level is covered in the upper surface of multiple nano-pillar to form plane, and referring to Fig. 2 D, Fig. 2 D is that GaN film is laterally created on the schematic diagram in GaN nano-pillar.
In the present embodiment, in step S203, polycrystalline growing of heap of stone is to be realized by molecular beam epitaxy (MolecularBeamEpitaxy, MBE) method.In step S203, when GaN longitudinally generates, now Nitrogen ion concentration is more than gallium ion concentration (N-rich), and now ambient temperature controls at 880 DEG C.
In the present embodiment, step S204 utilizes brilliant lateral prolongation method (EpitaxialLateralOvergrowth of heap of stone, ELOG) GaN is made laterally to generate thin film, namely when GaN laterally generates, now gallium ion concentration is more than Nitrogen ion concentration (Ga-rich), and ambient temperature controls at 750 DEG C.
It should also be noted that due to GaN nano-pillar be created on the crystal seed of aluminium nitride time, in other words, the space of meeting generation rule between the generation process of GaN nano-pillar, therefore when growing GaN film, the space of its systematicness can be reduced the stress of GaN film and be produced, it is to avoid GaN film stress produces to break.
It addition, above-described embodiment is with silicon substrate for example, but the silicon substrate of the present invention also can be replaced by sapphire substrate, gallium nitride base board or silicon carbide substrate.
At present, prior art is all the polycrystalline growing of heap of stone of non-array, and the present invention utilizes array to grow up and after cross growth makes its surface smooth, is again with nano impression (or repeatedly nano impression) and the defect concentration of GaN material is decreased below 107-108cm-2；It addition, prior art adopts the polycrystalline growing of heap of stone of non-array formula, so its defect concentration can more than 109cm-2, and film thickness is at 2-3 μm, and thin film will break, but the present invention can make film growth to thickness more than more than 3um without breaking.
Referring to Fig. 3 A, Fig. 3 A is that the present invention utilizes light to excite the spectrogram that fluorescence (photoluminescence) method is measured.The comparison carried out on sapphire substrate in silicon substrate and prior art for the present invention in figure 3 a, wherein solid line is silicon substrate, and dotted line is sapphire substrate.Present invention full width at half maximum (FWHM) (Fullwidthathalfmaximum, FWHM) on a silicon substrate is 71meV, and prior art full width at half maximum (FWHM) on sapphire substrate is 96meV, and namely the epitaxial structure of the present invention is better than prior art.
Referring to Fig. 3 B, Fig. 3 B is the spectrogram that the present invention utilizes that light excites fluorescence method to measure at different ambient temperatures, and wherein dotted line is room temperature, and solid line is absolute temperature 77K.By Fig. 3 B it can be seen that when the structure of the present invention is under room temperature with absolute temperature 77K, its performance remains stable.
In sum, the present invention takes to generate molecular beam epitaxy with low temperature, and array crystal seed of arranging in pairs or groups makes GaN generate nano-pillar on a silicon substrate, can be reduced by the space between GaN nano-pillar and not mate produced stress because of lattice, the thickness of GaN film can be increased thus, improve the defect density existed in prior art.
Claims (10)
1. a brilliant generating structure of heap of stone, it is adaptable to the of heap of stone brilliant generating structure of gallium nitride, this brilliant generating structure of heap of stone comprises:
Substrate；
Multiple crystal seeds, arrange and are arranged at the surface of described substrate with array；
Multiple nano-pillar, are longitudinally disposed on described crystal seed respectively；And
Thin film, level is covered in the upper surface of the plurality of nano-pillar to form plane.
2. brilliant generating structure of heap of stone according to claim 1, wherein, described crystal seed is aluminium nitride.
3. brilliant generating structure of heap of stone according to claim 2, wherein, described nano-pillar and described thin film are gallium nitride.
4. brilliant generating structure of heap of stone according to claim 3, wherein, the length of described nano-pillar is 50nm-150nm；Width is 100-300nm.
5. brilliant generating structure of heap of stone according to claim 4, wherein, described spacing between the crystal seed of array arrangement is for 100-300nm.
6. brilliant generating structure of heap of stone according to claim 5, wherein, described film thickness is 3-4 μm or 3-5 μm.
7. brilliant generating structure of heap of stone according to claim 1, wherein, described substrate is silicon substrate, sapphire substrate, gallium nitride base board or silicon carbide substrate.
8. the generation method of a brilliant generating structure of heap of stone, it is adaptable to the of heap of stone brilliant of gallium nitride generates, and the method comprises:
Substrate is provided；
Aln layer is set on the substrate, and utilizes strong acid to etch described aln layer, make this aln layer be formed with multiple crystal seeds of array arrangement；
Polycrystalline growing of heap of stone is utilized to make gallium nitride longitudinally generate multiple nano-pillar on described crystal seed；And
Polycrystalline growing of heap of stone is utilized to make gallium nitride laterally generate thin film；
Wherein, this thin film level is covered in the upper surface of the plurality of nano-pillar to form plane.
9. the generation method of brilliant generating structure of heap of stone according to claim 8, wherein, described substrate is silicon substrate, sapphire substrate, gallium nitride base board or silicon carbide substrate.
10. the generation method of brilliant generating structure of heap of stone according to claim 9, wherein, the spacing between the described crystal seed of array arrangement is 100-300nm.
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| WO2018177117A1 (en) * | 2017-04-01 | 2018-10-04 | 厦门三安光电有限公司 | Nitride underlayer and preparation method therefor |
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