CN105729326B - The method for manufacturing chemical mechanical polishing pads - Google Patents

The method for manufacturing chemical mechanical polishing pads Download PDF

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Publication number
CN105729326B
CN105729326B CN201510964932.2A CN201510964932A CN105729326B CN 105729326 B CN105729326 B CN 105729326B CN 201510964932 A CN201510964932 A CN 201510964932A CN 105729326 B CN105729326 B CN 105729326B
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CN
China
Prior art keywords
thin slice
acceptable
colony
checked
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201510964932.2A
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Chinese (zh)
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CN105729326A (en
Inventor
F·V·阿赫奥拉
A·旺克
M·加萨
S·章
J·蔡
W·A·希申
J·D·塔特
L·H·蒋
S-T·金
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Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
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Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
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Publication of CN105729326A publication Critical patent/CN105729326A/en
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009Tools not otherwise provided for
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0072Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using adhesives for bonding abrasive particles or grinding elements to a support, e.g. by gluing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D99/00Subject matter not provided for in other groups of this subclass
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59Transmissivity

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

A kind of method for manufacturing chemical mechanical polishing pads is provided, wherein automatic inspection system is configured to the macroheterogeneity of detection cutting thin slice and is categorized into the cutting thin slice acceptable or to be checked;Wherein described acceptable cutting thin slice is processed further being formed the polishing layer of chemical mechanical polishing pads.

Description

The method for manufacturing chemical mechanical polishing pads
Technical field
The present invention relates generally to the field of manufacture chemical mechanical polishing pads.A kind of in particular it relates to manufacture The method of chemical mechanical polishing pads comprising polishing layer.
Background technology
In the manufacture of integrated circuit and other electronic installations, multiple conductive, semiconductives and dielectric materials layer are deposited on half Removed on the surface of conductor chip or from it.Conductive, semiconductive and thin layer of dielectric material can pass through a variety of techniques of deposition. Modern times processing in common deposition technique include also referred to as the physical vapour deposition (PVD) (PVD) of sputter, chemical vapor deposition (CVD), The chemical vapor deposition (PECVD) and electrochemistry plating (ECP) of plasma enhancing.
Because material layer deposited in sequential and removal, the upper space of chip becomes uneven.Because Subsequent semiconductor Processing (such as metallization) needs chip to have flat surfaces, so chip needs to planarize.Planarization is applied to go unless institute Want surface configuration and surface defect, such as rough surface, coalescence material, crystal lattice damage, scratch and contaminated layer or material.
Chemical-mechanical planarization or chemically mechanical polishing (CMP) are a kind of making substrate (such as semiconductor wafer) plane The common technique of change.In conventional CMP, chip is arranged on carrier component and contacts placement with the polishing pad in CMP tool. Carrier component provides controllable pressure to chip, and it is pressed against polishing pad.Pad is set to be moved relative to chip by external motivating force Dynamic (such as rotation).At the same time, Chemical composition that (" slurry ") or other polishing solutions are provided between chip and polishing pad. Therefore, by carrying out chemistry and mechanism to wafer surface polishing to pad surface and slurry and making it into plane.
In U.S. Patent No. 5,578,362, Reinhart (Reinhardt) et al. discloses known in art Exemplary polishing pad.The polishing pad of Reinhart includes the polymeric matrices that microballoon is dispersed with entirety.In general, microballoon is blended And mixed with liquid polymeric material and be transferred to mould and be used to solidify.Then molded articles are cut into slices to form polishing layer.Order Regrettably, non-required defect can be presented in the polishing layer formed in this way to people, and when being incorporated into polishing pad, the defect can The defects of causing the substrate with its polishing.
Parker (Park) et al. discloses in U.S. Patent No. 7,027,640 a kind of to be used to solve and chemically-mechanicapolish polish Possibility defect in the polishing layer of pad about the problem of confirmation method.Parker et al. discloses one kind and is used to detect or check to be used for The equipment for performing the defects of the pad of chip chemically mechanical polishing, it is included:Camera, it is thereon and mobile for pad to be loaded The pad drive device of pad;Installed towards pad so that the image of pad is changed into electric signal and exports converted electric signal;Numeral Image data acquiring device, for the electric signal propagated from camera to be changed into data signal;And image data processing unit, For handling the defects of view data and detecting pad, wherein described image data processing unit is based on the image on any point Data calculate one or more quantitative characteristic values of light, and the data are obtained from described image data acquisition facility, and by pad Following position judgment be defect, wherein by combine one or more acquired in quantitative characteristic value obtain hierarchical value with from Difference between the hierarchical value that the normal surface of pad obtains is more than predetermined value.
However, Parker et al. description apparatus and method be designed for use with reflect optical test be ready to polishing configuration in it is complete Into chemical mechanical polishing pads.Specifically, using reflection optical test chemical mechanical polishing pads and the throwing being incorporated into such pad Photosphere has significant drawback.Differentiate limited in one's ability, the defect of the sub-surface defect in the polishing layer being incorporated to using reflected light Keep off in the surface of polishing layer.Nevertheless, because using chemical mechanical polishing pads, the surface of polishing layer is gradually worn out.Cause This, starts to become gradually more to connect the defects of the surface of the polishing layer away from specified chemical mechanical polishing pads during service life is padded Nearly polished surface.In addition, the chemical mechanical polishing pads being ready in polishing configuration routinely include the polishing table of improvement polishing layer To promote to polish substrate (such as groove, perforation), it improves complicated automatic defect using the gray-scale level described in Parker et al. and examined in face Survey.
Therefore, it is still necessary to manufactured using the automatic check method with Strengthening and Polishing layer defects identification function with polishing layer Low defect chemical mechanical polishing pads modification method.
The content of the invention
The present invention provides a kind of method for manufacturing the chemical mechanical polishing pads with polishing layer, and it is included:There is provided by that can consolidate Change the solidification pie that material is formed;Wherein described curable materials include liquid prepolymer and various trace elements, wherein institute Various trace elements are stated to be scattered in the liquid prepolymer;Cut the solidification pie and form multiple cutting thin slices;There is provided Automatic inspection system, it is included:Camera obscura;Light source, it launches light beam;Photodetector;Digital image data harvester;And figure As data processing unit;The multiple cutting thin slice is loaded into the camera obscura;Thin slice is cut one at a time in the light source The multiple cutting thin slice is conveyed between the photodetector;Wherein described each cutting thin slice is in its transmissive surface and collimeter There is thickness T between faceS;Wherein described transmissive surface and the shock surface are substantial parallel;Wherein described light source transmitting The light beam is oriented to impact on the shock surface;And wherein described photodetector it is oriented with detection from described The transmitted light of light beam, the transmitted light propagate through thickness TSAnd spread out of from the transmissive surface;Wherein described transmitted light tool There are at least one detectable characteristics;Wherein described at least one detectable characteristics include the intensity of the transmitted light;It is wherein described At least one detectable characteristics change into electric signal by the photodetector;The wherein telecommunications from the photodetector Number data signal is changed into by the digital image data harvester;Wherein come from the digital image data harvester The data signal handled by described image data processing unit, wherein described image data processing unit is configured to examine Survey macroheterogeneity and be categorized into cutting thin slice acceptable or to be checked;Wherein the multiple cutting thin slice is divided into acceptable The colony of thin slice and the colony of thin slice to be checked;The colony of wherein described acceptable thin slice includes at least one acceptable thin slice;With And the acceptable thin slice of colony of the processing from the acceptable thin slice forms the polishing layer of the chemical mechanical polishing pads; Wherein described polishing layer is adjusted for polishing substrate.
Brief description of the drawings
Fig. 1 is the description of the perspective view of cutting thin slice.
Fig. 2 is the description of the perspective view of cutting thin slice.
Fig. 3 is the description for being incorporated to cutting thin slice as the cross section view of the chemical mechanical polishing pads of polishing layer.
Fig. 4 is the description of the perspective view of mould cavity.
Embodiment
The method of the present invention provides the notable Quality advance that finished product (gets out use) chemical mechanical polishing pads.The present invention's Method is greatly improved for the use of the quality control that the chemical mechanical polishing pads of the cutting thin slice formed by polymeric material manufacture, institute State polymeric material and contain the trace element being dispersed therein, its by first check for cut thin slice with differentiate acceptable thin slice with it is more The individual transmissive surface for cutting thin slice and mapping thin slice to be checked estimates the thin slice to be checked containing macroheterogeneity to help to focus on Part carry out.In this way, significantly reducing operating personnel's fatigue, (i.e. operator need not be to acceptable cutting thin slice consumption Expense positions macroheterogeneity without a few hours).Therefore, allow to raising operating personnel's focus (to comment to introduce maximum value The specific inhomogeneities in cutting thin slice is estimated to judge applicability).
" poly- (urethane) " covers (a) by (i) isocyanates and (ii) polyalcohol (including two as used herein, the term Alcohol) react the polyurethane formed;And (b) by (i) isocyanates and (ii) polyalcohol (including glycol) and (iii) water, amine or Poly- (urethane) that the composite reaction of water and amine is formed.
As used in this article on the term with transmissive surface (14) and the cutting thin slice (20) of shock surface (17) " averagely cut sheet thickness, TS- is averaged" mean and measured in the direction of the plane of transmissive surface (14) (28) from cutting Thickness T of the transmissive surface (14) of skiving piece (20) to the cutting thin slice (20) of shock surface (17)SAverage value.(referring to figure 3)。
As used in this article on with being incorporated to as polishing layer (120) and cutting with polished surface (114) Term " average groundwork thickness, the T of the chemical mechanical polishing pads (110) for the subpad (125) that skiving piece circle connectsB- is averaged" mean and hanging down Top table of the lower surface (127) from subpad (125) directly measured in the direction of polished surface (114) to subpad (125) The thickness T of the subpad (125) in face (126)BAverage value.(referring to Fig. 3).
As used in this article on being incorporated to and with the cutting of polished surface (114) as polishing layer (120) Term " average total thickness, the T of the chemical mechanical polishing pads (110) of thin sliceT- is averaged" mean perpendicular to polished surface (114) The chemical mechanical polishing pads (110) of the lower surface (127) from polished surface (114) to subpad (125) measured in direction Thickness TTAverage value.(referring to Fig. 3).
Term " substantially round section " as used in herein in connection with cutting thin slice (20) means that to project cutting thin The cutting from central shaft A to the outer perimeter (15) of cutting thin slice (20) in the plane (28) of the transmissive surface (14) of piece (20) is thin The greatest radius r ratios of piece (20) project cutting thin slice (20) transmissive surface (14) plane (28) on from central shaft A to Cut the most short radius r length≤20% of the cutting thin slice (20) of the outer perimeter (15) of thin slice (20).(referring to Fig. 1 and 2).
As the term " substantial parallel " used in herein in connection with cutting thin slice (20) is meant with cutting thin slice (20) The central shaft A (and any line in parallel) that the plane (30) of shock surface (17) is vertical will be flat with transmissive surface (14) Face (28) is intersected with angle γ;Between wherein angle γ is 89 to 91 °.(referring to Fig. 1 and 2).
Term " substantial orthogonality " as used in herein in connection with mould cavity (200) means vertical inner boundary (215) risen relative to x-y plane (230) with 85 and 95 ° of angles from bottom internal border (212).(referring to Fig. 4).
" macroheterogeneity " means the regional area on the transmissive surface of cutting thin slice as used herein, the term The adjacent area being cut on the transmissive surface of thin slice surrounds, wherein the luminous intensity detected propagated by the regional area The luminous intensity detected than being propagated by adjacent area is high or low >=0.1% photodetector detectable strength range Amount;And the transmissive surface covered of wherein described regional area is a part of sufficiently large straight to be closed in the plane of transmissive surface Footpath is 15.875mm open circles.
" defect density " refers to peripheral region of the microelement concentration relative to cutting thin slice as used herein, the term Macroheterogeneity in the significantly reduced cutting thin slice in domain.Defect density shows significantly compared to the peripheral region of cutting thin slice Higher transparency (detection intensity of i.e. higher transmitted light).
" stomata " refers to that including air causes compared with the peripheral region for cutting thin slice thoroughly as used herein, the term Macroheterogeneity in the cutting thin slice of lightness significantly higher (i.e. the detection intensity of transmitted light is higher).
" include defect " as used herein, the term and refer to that there is external contaminant to cause and cut around thin slice Region is compared to the macroheterogeneity in the cutting thin slice of transparency significantly lower (i.e. the detection intensity of transmitted light is relatively low).
Preferably, the method for manufacturing the chemical mechanical polishing pads with polishing layer of the present invention includes:There is provided by curable The solidification pie that material is formed;Wherein described curable materials include liquid prepolymer and various trace elements, wherein described Various trace elements are scattered in the liquid prepolymer;Cut the solidification pie and form multiple cutting thin slices;There is provided certainly Dynamic inspection system, it is included:Camera obscura is (preferably, wherein the camera obscura has for holding at least ten cutting thin slice;More preferably At least 15 cutting thin slices;More preferably at least 20 cutting thin slices;The capacity of most preferably at least 30 cutting thin slices);Light source, its Launch light beam;Photodetector;Digital image data harvester;And image data processing unit;The multiple cutting is thin Piece is loaded into the camera obscura;Cutting thin slice conveys the multiple cut between the light source and the photodetector one at a time Skiving piece;Wherein described each cutting thin slice has thickness T between its transmissive surface and shock surfaceS;Wherein described transmissometer Face and the shock surface are substantial parallel;The light beam of wherein light source transmitting is oriented to impact the collimeter On face;And wherein described photodetector is oriented to detect the transmitted light from the light beam, the transmitted light propagates through Thickness TSAnd from transmissive surface outflow (preferably, wherein the beam orthogonal of light source transmitting is thin in each cutting The shock surface of piece is impacted on each cutting thin slice);Wherein described transmitted light has at least one detectable characteristics;Wherein At least one detectable characteristics include the intensity of the transmitted light (preferably, wherein at least one detectable characteristics Further comprise the wave spectrum of the transmitted light);The intensity of wherein described transmitted light is converted by the photodetector Into electric signal;Wherein the electric signal from the photodetector changes into number by the digital image data harvester Word signal;The data signal wherein from the digital image data harvester passes through described image data processing unit Processing, wherein described image data processing unit are configured to detect macroheterogeneity and cutting thin slice are categorized into and can connect By or it is (preferably, wherein the classification is menu based on quality control criterion carry out) to be checked;Wherein the multiple cutting is thin Piece is divided into the colony of acceptable thin slice and the colony of thin slice to be checked;The colony of wherein described acceptable thin slice include it is at least one can Receive thin slice;And the acceptable thin slice of colony of the processing from the acceptable thin slice forms the chemical mechanical polishing pads The polishing layer;Wherein described polishing layer is adjusted for polishing substrate.
Preferably, solidification pie used in method of the invention is with by bottom internal border (212) and vertical Prepared in the mould for the mould cavity (200) that inner boundary (215) defines.(referring to such as Fig. 4).Preferably, bottom internal side Boundary (212) is in x-y plane (230) and vertical inner boundary (215) is substantially perpendicular to x-y plane (230).
Preferably, mould cavity (200) has central shaft CAxle(222), it is consistent with z-axis and at central point (221) place The bottom internal border (212) of cross-section mould cavity (200).Preferably, central point (221) is located at mould cavity (200) projection Section C in x-y plane (230)X- sections(224) at geometric center.(referring to Fig. 4).
Project the mould cavity section C in x-y plane (230)X- sections(224) it can be any regular or irregular two-dimentional shape Shape.Preferably, mould cavity section CX- sectionsSelected from polygon and ellipse.It is highly preferred that mould cavity section CX- sections(224) it is With mean radius rC(preferably, wherein rC100cm is arrived for 20;It is highly preferred that wherein rC65cm is arrived for 25;Most preferably, its Middle rCArrive 60cm for 40) substantially round section.Most preferably, mould cavity is approximate has substantially round section CX- sections (224) right cylindrical region;The wherein symmetry axis C of mould cavityX- symmetry axisWith mould cavity central shaft CAxleUnanimously;Wherein positive round Column regions have the cross-sectional area C being defined as belowX- areas
CX- areas=π rC 2
Wherein rCTo project the mould cavity cross section C in x-y planeX- areasMean radius;And wherein rCArrived for 20 (more preferably 25 arrive 65cm to 100cm;Most preferably 40 arrive 60cm).
Preferably, the curable materials for being used to provide solidification pie in method of the invention include liquid prepolymer and more Kind trace element, wherein the various trace elements are scattered in the liquid prepolymer.Preferably, curable materials include liquid Body prepolymer and various trace elements, wherein the various trace elements are dispersed in liquid prepolymer.
Preferably, liquid prepolymer polymerization (solidify) formed selected from following material poly- (urethane), polysulfones, polyether sulfone, Nylon (nylon), polyethers, polyester, polystyrene, acrylic acid series polymeric compounds, polyureas, polyamide, polyvinyl chloride, polyvinyl fluoride, Polyethylene, polypropylene, polybutadiene, polyethyleneimine, polyacrylonitrile, polyethylene glycol oxide, polyolefin, polyacrylic acid (alkyl) Ester, polymethylacrylic acid (alkyl) ester, polyamide, PEI, polyketone, epoxy resin, silicone, by propylene diene list Body formed polymer, protein, polysaccharide, poly- acetic acid esters and it is foregoing at least two combination.Preferably, liquid pre-polymerization Thing polymerize the material to be formed and include poly- (urethane).It is highly preferred that liquid prepolymer polymerize to form the material comprising polyurethane.It is optimal Selection of land, liquid prepolymer polymerization (solidification) form polyurethane.
Preferably, liquid prepolymer includes the material containing PIC.It is highly preferred that liquid prepolymer is comprising poly- different The reaction product of cyanate (such as diisocyanate) and the material containing hydroxyl.
Preferably, PIC is selected from double 4,4'- cyclohexyl-isocyanic acid methylene esters;Two NSC 87419s;Different Fo Er Ketone diisocyanate;The methylene ester of two isocyanic acid six;Propylene -1,2- diisocyanate;Tetramethylene -1,4- diisocyanate;1, 6- hexa-methylenes-diisocyanate;Dodecane -1,12- diisocyanate;Cyclobutane -1,3- diisocyanate;Hexamethylene -1, 3- diisocyanate;Hexamethylene -1,4- diisocyanate;1- NCO -3,3,5- trimethyl -5- isocyanatomethyls Hexamethylene;The triisocyanate of two cyclic isocyanate hexene ester methyl esters, the methylene ester of two isocyanic acid six;Two isocyanic acid 2,4,4- front threes The triisocyanate of base -1,6- hexane esters;The urea diketone of the methylene ester of two isocyanic acid six;Two vinyl isocyanates;Two isocyanic acids 2, The methylene ester of 2,4- trimethyls six;The methylene ester of two tri--methyl of isocyanic acid 2,4,4- six;Two isocyanic acid dicyclohexyl methyl hydride esters;And It is combined.Most preferably, PIC is for aliphatic and having less than 14% unreacted NCO.
Preferably, the material containing hydroxyl used in the present invention is polyalcohol.It is more that Exemplary polyhydric alcohols include such as polyethers First alcohol, hydroxy-end capped polybutadiene (including partially and fully hydrogenated derivatives), PEPA, polycaprolactone polyol, Polycarbonate polyol and its mixture.
Preferred polyol includes PPG.The example of PPG includes polytetramethylene ether glycol (" PTMEG "), polyethylene propane diols, polyoxy propane diols and its mixture.Hydrocarbon chain can have saturation or unsaturated bond and The aromatic group and cyclic group for being substituted or being unsubstituted.Preferably, polyalcohol of the invention includes PTMEG.It is adapted to poly- Ester polyol includes but is not limited to polyethylene glycol adipate glycol;Polyadipate fourth diester diol;Polyadipate second diester Propylene diester glycol;Phthalic acid -1,6-HD ester;Poly- (the methylene ester of adipic acid six) glycol;And its mixture.Hydrocarbon chain can With saturation or unsaturated bond, or the aromatic group and cyclic group for being substituted or being unsubstituted.It is adapted to polycaprolactone polyol Alcohol includes but is not limited to the polycaprolactone of 1,6-HD starting;The polycaprolactone of diethylene glycol starting;Trimethylolpropane The polycaprolactone of starting;The polycaprolactone of neopentyl glycol starting;The polycaprolactone of 1,4- butanediols starting;PTMEG startings gather Caprolactone;And its mixture.Hydrocarbon chain can have saturation or a unsaturated bond, or the aromatic group for being substituted or being unsubstituted and Cyclic group.Suitable makrolon includes but is not limited to poly phthalate carbonic ester and poly- (the methylene ester of carbonic acid six) two Alcohol.
Preferably, the various trace elements are selected from entrained air bubbles, hollow polymeric material (i.e. microballoon), the sky of liquid filling Heart polymeric material, water-soluble material (such as cyclodextrin) and insoluble phase material (such as mineral oil).Preferably, it is described a variety of micro- Secondary element is microballoon, such as polyvinyl alcohol, pectin, polyvinylpyrrolidone, hydroxyethyl cellulose, methylcellulose, hydroxypropyl Methylcellulose, carboxymethyl cellulose, hydroxy propyl cellulose, polyacrylic acid, polyacrylamide, polyethylene glycol, polyhydroxy ether Acrylate, starch, acid/maleic acid copolymers, polyethylene glycol oxide, polyurethane, cyclodextrin with and combinations thereof (such as from auspicious The Expancel of Akzo Nobel N.V. (Akzo Nobel) of allusion quotation (Sweden) Sundsvall (Sundsvall)TM).Microballoon Can it is chemically modified with for example, by it is branched, block and be crosslinked and change solubility, swelling and other characteristics.Preferably, microballoon Average diameter be less than 150 μm, and preferred average diameter is less than 50 μm.Most preferably, the average diameter of microballoon 48 is small In 15 μm.Pay attention to, the average diameter of microballoon can be change and different sizes or the mixture that different microballoons 48 can be used.It is micro- The optimal material selection of ball is acrylonitrile and vinylidene chloride (such as obtained from Akzo Nobel N.V.) be total to Polymers.
Liquid prepolymer for the method for the present invention optionally further includes curing agent.Preferred consolidation agent includes two Amine.It is adapted to poly- diamines to include primary amine and secondary amine.It is preferred that poly- diamines includes but is not limited to diethyl toluene diamine (" DETDA "); 3,5- dimethyl sulfenyl -2,4- toluenediamines and its isomers;3,5- diethyltoluene -2,4- diamines and its isomers (such as 3,5- diethyltoluene -2,6- diamines);4,4'- pairs-(Zhong Ding amino)-diphenyl methane;1,4- pairs-(Zhong Ding amino)-benzene; 4,4'- methylene-bis--(2- chloroanilines);4,4'- methylene-bis--(the chloro- 2,6- diethylanilines of 3-) (" MCDEA ");Poly- four Methylene oxygen-two-P aminobenzoates of ether;N, N'- dialkyl group diaminodiphenyl-methane;P, p'- methylene dianiline (MDA) (" MDA "), m-phenylene diamine (MPD) (" MPDA ");Methylene-bis- 2- chloroanilines (" MBOCA ");4,4'- methylene-bis--(2- chloroanilines) (“MOCA”);4,4'- methylene-bis--(2,6- diethylanilines) (" MDEA ");4,4'- methylene-bis--(2,3- dichloro-benzenes Amine) (" MDCA ");Amido -3,3'- diethyl -5,5'- the dimethyl diphenylmethanes of 4,4'- bis-;2,2', 3,3'- tetrachloro diamines Base diphenyl methane;Two-P aminobenzoates of propane diols;And its mixture.Preferably, diamine curing agent is selected from 3,5- bis- Methylsulfany -2,4- toluenediamines and its isomers.
Curing agent can also include glycol, triol, tetrol and hydroxy-end capped curing agent.It is adapted to glycol, triol and four Alcohol groups include ethylene glycol;Diethylene glycol;Polyethylene glycol;Propane diols;Polypropylene glycol;Lower molecular weight polytetramethylene ether second two Alcohol;Double (2- hydroxyl-oxethyls) benzene of 1,3-;1,3- pairs-[2- (2- hydroxyl-oxethyls) ethyoxyl] benzene;1,3- pairs-{ 2- [2- (2- Hydroxyl-oxethyl) ethyoxyl] ethyoxyl } benzene;1,4- butanediols;1,5- pentanediols;1,6-HD;Resorcinol-two-(β- Hydroxyethyl) ether;Quinhydrones-two-(beta-hydroxy ethyl) ether;And its mixture.It is preferred that hydroxy-end capped curing agent includes 1,3- Double (2- hydroxyl-oxethyls) benzene;1,3- pairs-[2- (2- hydroxyl-oxethyls) ethyoxyl] benzene;1,3- pairs-{ 2- [2- (2- '-hydroxyethoxies Base) ethyoxyl] ethyoxyl } benzene;1,4- butanediols;And its mixture.Hydroxy-end capped curing agent and diamine curing agent can wrap Include one or more saturations, unsaturation, aromatic series and cyclic group.In addition, hydroxy-end capped curing agent and diamine curing agent can Including one or more halogen groups.
Preferably, in the method for the invention, solidification pie uses the cutting tip with cutting edge to cut into multiple Cutting thin slice with wanted thickness.Preferably, apply sharpening compound to the cutting edge of cutting tip, and use sharpening band Polishing cutting edge, then cuts into multiple cutting thin slices by pie.Sharpening compound used is preferred in the method for the present invention Include the alumina abrasive being scattered in aliphatic acid.It is highly preferred that sharpening compound used in the method for the present invention includes 70 to 82 weight % alumina abrasives being scattered in 18 to 35 weight % aliphatic acid.Sharpening used in the method for the present invention Band preferably leather sharpening band.Most preferably, sharpening band used in method of the invention be leather sharpening band, its through design and Rotary tool (such asRotary tool) it is used together.
Preferably, in the method for the invention, it is heated in order to cutting operation to solidify pie.Preferably, cutting It is heating and curing pie using heat lamp during operation, wherein solidification pie is cut into multiple cutting thin slices.
Preferably, in the method for the invention, cutting solidification pie forms multiple cutting thin slices, wherein cutting thin slice Average thickness TS- is averagedFor 500 to 5,000 μm (preferably, 750 to 4,000 μm;It is highly preferred that 1,000 to 3,000 μm;Most preferably Ground, 1,200 to 2,100 μm).
Preferably, in the method for the invention, automatic inspection system include be designed to hold, store and distribute cut it is thin The camera obscura of piece.Preferably, camera obscura, which has, is used to hold at least ten cutting thin slice (more preferably at least 15 cutting thin slices;It is more excellent At least 20 cutting thin slices of choosing;Most preferably at least 30 cutting thin slices) design capacity.Camera obscura design capacity enables an operator to It is enough to load many cutting thin slices to automatic inspection system.After loading multiple cutting thin slices to camera obscura, operating personnel can be then Perform other tasks and automatic inspection system technique and be categorized into multiple cutting thin slices acceptable or to be checked simultaneously.
Preferably, in the method for the invention, automatic inspection system includes a kind of mechanism, and it turns one at a time from camera obscura Move cutting thin slice;Thin slice is cut in conveying one at a time between light source and photodetector;And make cutting thin slice one at a time Ground is returned in camera obscura.Preferably, the mechanism includes at least one linear motor.It is highly preferred that the mechanism is included at least The linear motor of one lineal scale resolution ratio≤1 μm.
Preferably, in the method for the invention, automatic inspection system includes the light source of transmitting light beam.Preferably, the light The light beam of source transmitting is presented in the emission spectrum of the wavelength of visible ray, ultraviolet and infrared spectral range.Light source can be broad band source (example Such as white light source) or narrow-band source (such as narrow-band blue light source).Preferably, light source is narrow-band blue light source.It is highly preferred that light source is arrowband (preferably 460 arrive 480nm for blue-light source, wherein light beam displaying 460 to 490nm;More preferably 460 to 470;Most preferably 463 arrive 467nm) peak wavelength and full width half maximum FWHM≤50nm (preferably≤40nm;More preferably≤35nm;Most preferably≤30nm) Emission spectrum.One skilled in the art can select appropriate light source to provide light beam of the emission spectrum in wanted region. Preferably, in the method for the invention, automatic inspection system includes light source, and wherein light source is light emitting diode.
Preferably, in the method for the invention, automatic inspection system, which includes, can convert the transmitted light from light beam extremely A kind of few photodetector of detectable characteristics, the transmitted light propagate through thickness TSAnd passed from the transmissive surface of cutting thin slice Go out.It is highly preferred that in the method for the invention, automatic inspection system includes the intensity that can convert the transmitted light from light beam Photodetector, the transmitted light propagate through thickness TSAnd from the transmissive surface outflow of cutting thin slice.Most preferably, in this hair In bright method, automatic inspection system includes the light detection of the intensity that can convert the transmitted light from light beam and wave spectrum Device, the transmitted light propagate through thickness TSAnd from the transmissive surface outflow of cutting thin slice.Preferably, photodetector is to enter At least one detectable characteristics for the light propagated penetrated change into the photoelectric converting device of electric signal.Preferably, photodetector For charge coupled device (CCD) array.Preferably, charge coupled device (CCD) used is selected from monochromatic and colored CCD.More preferably Ground, photodetector include the array of at least five (most preferably at least 8) photoelectric converting device.Most preferably, photodetector bag The array of charge coupled device containing at least eight (CCD) imaging sensor, its resolution ratio≤20 μm (preferably≤16 μm) and regard Open country >=100mm (preferably >=120mm).
Digital image data harvester changes into data signal the electric signal output of photodetector.In the art It is known that suitable for the digital image data harvester being used in conjunction with the invention.
The uneven composition and property of cutting thin slice from the polymeric material pie containing various trace elements causes vacation It is impracticable to be marked with quasi- thin slice.That is, a variety of harmless production artifacts in such cutting thin slice be present causes letter with standard value Single gray scale is relatively to for checking that the automatic system for the cutting thin slice being incorporated to as polishing layer in chemical mechanical polishing pads is invalid.
Suitable for general purpose and the specific purposes image data processing unit that is used in conjunction with the invention in the art It is well-known.Preferably, coupling is included for the image data processing unit in the automatic inspection system of the inventive method To the CPU of non-volatile data storage unit.
Preferably, CPU be further coupled to one or more user input interface controllers (such as mouse, Keyboard) and at least one Output Display Unit.
Preferably, image data processing unit is configured to the macroheterogeneity in detection cutting thin slice and will cutting Thin slice is categorized into acceptable or to be checked.Preferably, being based on quality control criterion menu by image data processing unit will cut Thin slice is categorized into acceptable or to be checked.Number of drawbacks, including such as defect density, stomata are likely to occur during manufacture cutting thin slice Defect and include defect.It should be noted that any one or the combination in these defects are depending on the size of the impacted part of transmissive surface It may make up the macroheterogeneity in cutting thin slice.It should be noted that number of drawbacks type will be presented differently to photodetector.For Defect density and stomata, defective region will be more transparent than the peripheral region for cutting thin slice.For including defect, defective area Domain will be opaquer than the peripheral region for cutting thin slice.Whether such defect is acceptable will to depend on many conditions, including for example simultaneously The chemical mechanical polishing pads for entering to cut thin slice will perform the substrate of polishing task.Some substrates are more accurate than other substrates, and Therefore need to be more tightly controlled to polish the cutting thin slice of the polishing layer being intended as in chemical mechanical polishing pads of manufacture for it Uniformity.
Preferably, in the method for the invention, handle at least one acceptable thin slice and form chemical mechanical polishing pads (110) Polishing layer (120);Wherein polishing layer (120) is adapted to be used to polish substrate, and it is included:By (a) in acceptable thin slice It is machined that at least one groove forms groove pattern and (b) forms thickness T at least partially by acceptable thin slicesIt is logical At least one formation polished surface (114) in the perforation of road extension.It is highly preferred that in the method for the invention, processing is at least One acceptable thin slice forms the polishing layer (120) of chemical mechanical polishing pads (110);Wherein polishing layer (120) is adapted to be used for Substrate is polished, it is included forms groove pattern to form polishing table by being machined at least one groove in acceptable thin slice Face (114).Most preferably, in the method for the invention, at least one acceptable thin slice of processing forms chemical mechanical polishing pads (110) polishing layer (120);Wherein polishing layer (120) is adapted to be used to polish substrate, and it is included by acceptable thin slice It is machined at least one groove and forms groove pattern to form polished surface (114);Wherein groove pattern is adapted to be used to throw Light substrate.(referring to Fig. 3).
Preferably, the chemical mechanical polishing pads (110) manufactured using the method for the present invention are preferably adjusted for around central shaft (112) rotate.(referring to Fig. 3).Preferably, at least one groove is configured to form polished surface (114) so that in the polishing phase Between pad (110) around central shaft (112) rotate when, at least one inswept substrate of groove.Preferably, at least one groove is selected from curved surface Groove, linear grooves with and combinations thereof.Preferably, the depth of at least one groove presentation >=10mil (preferably 10 arrive 150mil) Degree.Preferably, at least one groove forms the groove pattern for include at least two grooves, its have be selected from >=10mil, >= 15mil and 15 to 150mil depth combines;100mil width is arrived selected from >=10mil and 10;And selected from >=30mil, 200mil spacing is arrived in >=50mil, 50 to 200mil, 70 to 200mil and 90.
The cutting thin slice being incorporated into preferably as polishing layer (120) in chemical mechanical polishing pads (110), which contains, is incorporated to it In<1ppm polishing particles.
Preferably, wherein the acceptable thin slice of processing further includes:Offer has top surface (126) and lower surface (127) subpad (125);There is provided sticker (123), (preferably, wherein sticker is selected from pressure sensitive adhesive, PUR and contact It is at least one in sticker;More preferably wherein described sticker is selected from pressure sensitive adhesive and PUR;Most preferably, wherein institute It is PUR to state sticker);And the top surface (126) of subpad (125) is laminated to polishing layer using sticker (123) (120) basal surface (117).(referring to Fig. 3).
Preferably, in the method for the invention, handle at least one acceptable thin slice and form chemical mechanical polishing pads (110) Polishing layer (120);Wherein polishing layer (120) is adapted to be used to polish substrate, and it is further included:Offer puts on subpad (125) the pressure-sensitive pressing plate grinding oxidant layer (170) of lower surface (127).
Preferably, in the method for the invention, handle at least one acceptable thin slice and form chemical mechanical polishing pads (110) Polishing layer (120);Wherein polishing layer (120) is adapted to be used to polish substrate, and it is further included:Offer puts on subpad (125) the pressure-sensitive pressing plate grinding oxidant layer (170) of lower surface (127);And provide and put on pressure-sensitive pressing plate grinding agent The lower surface of release liner (175) on layer (170), wherein pressure-sensitive pressing plate grinding oxidant layer (170) insertion subpad (125) (127) between release liner (175).(referring to Fig. 3).
Some polishing applications need to be incorporated into subpad (125) in the chemical mechanical polishing pads (110) of the present invention.Affiliated neck The those skilled in the art in domain will be appreciated by selecting appropriate structuring material and the subpad thickness of the subpad (125) for being expected polishing method TB.Preferably, subpad (150) have >=(more preferably 30 arrive 100mil to 15mil;Most preferably 30 arrive 75mil) average subpad it is thick Spend TB- is averaged
Preferably, sticker (123) is selected from the group being made up of the following:Pressure sensitive adhesive, PUR, contact adhesion Agent with and combinations thereof.It is highly preferred that sticker (123) is selected from the group being made up of the following:Pressure sensitive adhesive and PUR. Most preferably, sticker (123) is reactive hot-melt.
Preferably, in the method for the invention, handle at least one acceptable thin slice and form chemical mechanical polishing pads (110) Polishing layer (120);Wherein polishing layer (120) is adapted to be used to polish substrate, and it is further included:There is provided at least one extra Layer (not shown), it connects and inserted between it with polishing layer (120) and pressure-sensitive pressing plate grinding oxidant layer (170) boundary.At least one Additional layer sticker (not shown) can be used to be incorporated into chemical mechanical polishing pads (110) for individual additional layer (not shown).Additional layer Sticker may be selected from pressure sensitive adhesive, PUR sticker, contact sticker with and combinations thereof.Preferably, additional layer sticker For PUR or pressure sensitive adhesive.It is highly preferred that additional layer sticker is PUR.
Preferably, chemical mechanical polishing pads of the invention (110) through particular design to help to polish selected from magnetic substrates, light Learn at least one substrate in substrate and Semiconductor substrate.Preferably, chemical mechanical polishing pads (110) are incorporated to and are used as polishing layer (120) cutting thin slice is adjusted for polishing the substrate selected from least one of the following:Magnetic substrates, optical substrate and partly lead Body substrate is (it is further preferred that Semiconductor substrate;Most preferably, semiconductor wafer).
In the method for the invention, wherein the colony of thin slice to be checked includes at least one thin slice to be checked and wherein at least one Individual thin slice to be checked contains at least one macroheterogeneity detected;Image data processing unit is preferably further configured to Manufacture and store in the nonvolatile memory the collection of illustrative plates of at least one thin slice to be checked, wherein position it is at least one detect it is grand See the position of inhomogeneities.
Preferably, method of the invention further includes:From the selected thin slice of colony's selection of thin slice to be checked;It is wherein to be checked thin The colony of piece includes at least one thin slice to be checked and wherein at least one thin slice to be checked contains at least one macroscopic view detected Inhomogeneities;Image data processing unit is preferably further configured to nonvolatile memory manufacture and stored at least one The collection of illustrative plates of thin slice to be checked, wherein positioning the position of at least one macroheterogeneity detected.
Preferably, method of the invention further includes:From the selected thin slice of colony's selection of thin slice to be checked;It is wherein to be checked thin The colony of piece includes at least one thin slice to be checked and wherein at least one thin slice to be checked contains at least one macroscopic view detected Inhomogeneities;Image data processing unit is preferably further configured to manufacture and store in the nonvolatile memory at least one The collection of illustrative plates of individual thin slice to be checked, wherein positioning the position of at least one macroheterogeneity detected;And wherein automatic inspection System further includes:Display;The image of wherein selected thin slice is presented on the display.What is presented on display is selected The image of thin slice can be the image of the whole transmissive surface of selected thin slice.Preferably, the image for selecting thin slice is at least one inspection The parts of images of the amplification of the macroheterogeneity measured.Preferably, the parts of images bag of the selected thin slice presented on display Include the peripheral region of the transmissive surface of whole macroheterogeneities and selected thin slice.Preferably, what is presented on display is selected thin The parts of images of piece can it is amplified with improve presentation image details in order to estimating selected thin slice.Preferably, it is of the invention Method further includes:Selected thin slice is estimated, wherein promoting mesh by the image of the selected thin slice presented on display Survey;And (i) is based on estimating reclassifying into selected thin slice and be subjected to, wherein selected thin slice is then added to acceptable thin slice Colony;Or (ii) be based on range estimation selected thin slice is categorized into it is defective, wherein selected thin slice be then added to it is defective thin The colony of piece.

Claims (9)

1. a kind of method for manufacturing the chemical mechanical polishing pads with polishing layer, it is included:
The solidification pie formed by curable materials is provided;Wherein described curable materials include liquid prepolymer and a variety of micro- Secondary element, wherein the various trace elements are scattered in the liquid prepolymer;
Cut the solidification pie and form multiple cutting thin slices;
Automatic inspection system is provided, it is included:
Camera obscura;
Light source, it launches light beam;
Photodetector;
Digital image data harvester;And
Image data processing unit;
The multiple cutting thin slice is loaded into the camera obscura;
Cutting thin slice conveys the multiple cutting thin slice between the light source and the photodetector one at a time;It is wherein described Each cutting thin slice has thickness T between its transmissive surface and shock surfaceS;Wherein described transmissive surface and the shock surface It is substantial parallel;
The light beam of wherein light source transmitting is oriented to impact on the shock surface;And wherein described light detection Device is oriented to detect the transmitted light from the light beam, and the transmitted light propagates through thickness TSAnd from the transmissive surface Outflow;
Wherein described transmitted light has at least one detectable characteristics;
Wherein described at least one detectable characteristics include the intensity of the transmitted light;
The intensity of wherein described transmitted light changes into electric signal by the photodetector;
Wherein the electric signal from the photodetector changes into digital letter by the digital image data harvester Number;
The data signal wherein from the digital image data harvester by described image data processing unit at Reason, wherein described image data processing unit are configured to detect macroheterogeneity and are categorized into cutting thin slice acceptable It is or to be checked;
Wherein the multiple cutting thin slice is divided into the colony of the colony and thin slice to be checked of acceptable thin slice;
The colony of wherein described acceptable thin slice includes at least one acceptable thin slice;And
The acceptable thin slice of colony of the processing from the acceptable thin slice forms the polishing of the chemical mechanical polishing pads Layer;Wherein described polishing layer is adapted to be used to polish substrate.
2. according to the method for claim 1, wherein the colony of the thin slice to be checked includes at least one thin slice to be checked;Wherein At least one thin slice to be checked contains at least one macroheterogeneity detected;And wherein described image data processing Unit is further configured to manufacture and store in the nonvolatile memory the collection of illustrative plates of at least one thin slice to be checked, wherein Position the position of at least one macroheterogeneity detected.
3. according to the method for claim 2, it is further included:
From the selected thin slice of colony's selection of the thin slice to be checked.
4. according to the method for claim 3, wherein the automatic inspection system further includes:
Display;
The image of wherein described selected thin slice is presented on the display.
5. according to the method for claim 4, it is further included:
The selected thin slice is estimated, wherein by the described image of the selected thin slice is presented on the display come Realize range estimation;And
(i) the selected thin slice is reclassified into based on the range estimation and be subjected to, wherein the selected thin slice is then added to The colony of the acceptable thin slice;Or (ii) be based on it is described range estimation the selected thin slice is categorized into it is defective, wherein described Selected thin slice is then added to the colony of defective thin slice.
6. according to the method for claim 4, wherein the described image of the selected thin slice detects for display at least one Macroheterogeneity amplification parts of images.
7. according to the method for claim 6, it is further included:
The selected thin slice is estimated, wherein by the described image of the selected thin slice is presented on the display come Realize range estimation;And
(i) the selected thin slice is reclassified into based on the range estimation and be subjected to, wherein the selected thin slice is then added to The colony of the acceptable thin slice;Or (ii) be based on it is described range estimation the selected thin slice is categorized into it is defective, wherein described Selected thin slice is then added to the colony of defective thin slice.
8. according to the method for claim 1, wherein handling the acceptable thin slice, comprising:
Groove pattern is formed to form polished surface by being machined at least one groove in the acceptable thin slice;
Wherein described groove pattern is adapted to be used to polish the substrate.
9. according to the method for claim 8, wherein handling the acceptable thin slice, further include:
Subpad is provided;
Sticker is provided;And
The subpad is laminated to the acceptable thin slice using the sticker.
CN201510964932.2A 2014-12-29 2015-12-21 The method for manufacturing chemical mechanical polishing pads Expired - Fee Related CN105729326B (en)

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